JP2001093837A5 - - Google Patents
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- JP2001093837A5 JP2001093837A5 JP1999264706A JP26470699A JP2001093837A5 JP 2001093837 A5 JP2001093837 A5 JP 2001093837A5 JP 1999264706 A JP1999264706 A JP 1999264706A JP 26470699 A JP26470699 A JP 26470699A JP 2001093837 A5 JP2001093837 A5 JP 2001093837A5
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- JP
- Japan
- Prior art keywords
- substrate
- plane
- reference plane
- thin film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26470699A JP4274504B2 (ja) | 1999-09-20 | 1999-09-20 | 半導体薄膜構造体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26470699A JP4274504B2 (ja) | 1999-09-20 | 1999-09-20 | 半導体薄膜構造体 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001093837A JP2001093837A (ja) | 2001-04-06 |
JP2001093837A5 true JP2001093837A5 (ru) | 2006-11-02 |
JP4274504B2 JP4274504B2 (ja) | 2009-06-10 |
Family
ID=17407062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26470699A Expired - Fee Related JP4274504B2 (ja) | 1999-09-20 | 1999-09-20 | 半導体薄膜構造体 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4274504B2 (ru) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3587081B2 (ja) | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体発光素子 |
JP3555500B2 (ja) | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Iii族窒化物半導体及びその製造方法 |
US6580098B1 (en) | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
JP3427047B2 (ja) * | 1999-09-24 | 2003-07-14 | 三洋電機株式会社 | 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法 |
JP4432180B2 (ja) | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
JP2001185493A (ja) | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法及びiii族窒化物系化合物半導体素子 |
AU2001241108A1 (en) | 2000-03-14 | 2001-09-24 | Toyoda Gosei Co. Ltd. | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element |
JP2001267242A (ja) | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体及びその製造方法 |
TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
JP2001313259A (ja) | 2000-04-28 | 2001-11-09 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体基板の製造方法及び半導体素子 |
US7619261B2 (en) | 2000-08-07 | 2009-11-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
JP3556916B2 (ja) * | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
US7052979B2 (en) | 2001-02-14 | 2006-05-30 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
JP2002280314A (ja) | 2001-03-22 | 2002-09-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法、及びそれに基づくiii族窒化物系化合物半導体素子 |
JP3690326B2 (ja) | 2001-10-12 | 2005-08-31 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
JP4284188B2 (ja) * | 2001-12-20 | 2009-06-24 | パナソニック株式会社 | 窒化物系半導体基板の製造方法および窒化物系半導体装置の製造方法 |
JP2010532916A (ja) * | 2007-07-12 | 2010-10-14 | ラティス パワー (チアンシ) コーポレイション | 区割りされた基板に作成された半導体デバイスに対する高品質境界を取得するための方法 |
JP5204046B2 (ja) * | 2009-06-25 | 2013-06-05 | シャープ株式会社 | 窒化物半導体ウェハ、窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
WO2013154485A1 (en) * | 2012-04-13 | 2013-10-17 | Sun Yanting | A method for manufacturing a semiconductor method device based on epitaxial growth. |
CN113314398B (zh) * | 2021-05-25 | 2024-02-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜 |
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1999
- 1999-09-20 JP JP26470699A patent/JP4274504B2/ja not_active Expired - Fee Related
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