JP2001085409A5 - - Google Patents

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Publication number
JP2001085409A5
JP2001085409A5 JP1999259627A JP25962799A JP2001085409A5 JP 2001085409 A5 JP2001085409 A5 JP 2001085409A5 JP 1999259627 A JP1999259627 A JP 1999259627A JP 25962799 A JP25962799 A JP 25962799A JP 2001085409 A5 JP2001085409 A5 JP 2001085409A5
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JP
Japan
Prior art keywords
gas supply
gas
electrode
plasma processing
substrate
Prior art date
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Application number
JP1999259627A
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English (en)
Japanese (ja)
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JP3969907B2 (ja
JP2001085409A (ja
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Priority to JP25962799A priority Critical patent/JP3969907B2/ja
Priority claimed from JP25962799A external-priority patent/JP3969907B2/ja
Publication of JP2001085409A publication Critical patent/JP2001085409A/ja
Publication of JP2001085409A5 publication Critical patent/JP2001085409A5/ja
Application granted granted Critical
Publication of JP3969907B2 publication Critical patent/JP3969907B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP25962799A 1999-09-14 1999-09-14 プラズマ処理装置 Expired - Lifetime JP3969907B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25962799A JP3969907B2 (ja) 1999-09-14 1999-09-14 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25962799A JP3969907B2 (ja) 1999-09-14 1999-09-14 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2001085409A JP2001085409A (ja) 2001-03-30
JP2001085409A5 true JP2001085409A5 (enExample) 2005-09-02
JP3969907B2 JP3969907B2 (ja) 2007-09-05

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ID=17336714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25962799A Expired - Lifetime JP3969907B2 (ja) 1999-09-14 1999-09-14 プラズマ処理装置

Country Status (1)

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JP (1) JP3969907B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020080014A (ko) * 2001-04-10 2002-10-23 주식회사 에이티씨 플라즈마 처리 장치
JP4185483B2 (ja) 2004-10-22 2008-11-26 シャープ株式会社 プラズマ処理装置
JP2006196681A (ja) 2005-01-13 2006-07-27 Sharp Corp プラズマ処理装置および同装置により製造された半導体素子
JP4584722B2 (ja) 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
TWI423308B (zh) * 2005-09-01 2014-01-11 松下電器產業股份有限公司 A plasma processing apparatus, a plasma processing method, and a dielectric window for use therefor and a method of manufacturing the same

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