JP2001077218A - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ

Info

Publication number
JP2001077218A
JP2001077218A JP25422099A JP25422099A JP2001077218A JP 2001077218 A JP2001077218 A JP 2001077218A JP 25422099 A JP25422099 A JP 25422099A JP 25422099 A JP25422099 A JP 25422099A JP 2001077218 A JP2001077218 A JP 2001077218A
Authority
JP
Japan
Prior art keywords
region
insulating film
transistor
floating gate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25422099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001077218A5 (enExample
Inventor
Naoki Abe
直樹 阿部
Nobuaki Satou
暢章 佐藤
Hiroyuki Inoue
弘之 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP25422099A priority Critical patent/JP2001077218A/ja
Publication of JP2001077218A publication Critical patent/JP2001077218A/ja
Publication of JP2001077218A5 publication Critical patent/JP2001077218A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP25422099A 1999-09-08 1999-09-08 電界効果型トランジスタ Pending JP2001077218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25422099A JP2001077218A (ja) 1999-09-08 1999-09-08 電界効果型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25422099A JP2001077218A (ja) 1999-09-08 1999-09-08 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JP2001077218A true JP2001077218A (ja) 2001-03-23
JP2001077218A5 JP2001077218A5 (enExample) 2006-10-19

Family

ID=17261942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25422099A Pending JP2001077218A (ja) 1999-09-08 1999-09-08 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JP2001077218A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006019680A (ja) * 2004-06-03 2006-01-19 Sharp Corp 半導体記憶装置およびその製造方法並びに携帯電子機器
JP2006108620A (ja) * 2004-10-01 2006-04-20 Hynix Semiconductor Inc 導電性側壁スペーサを有する不揮発性メモリ装置及びその製造方法
US7164167B2 (en) 2001-11-21 2007-01-16 Sharp Kabushiki Kaisha Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164167B2 (en) 2001-11-21 2007-01-16 Sharp Kabushiki Kaisha Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
US7582926B2 (en) 2001-11-21 2009-09-01 Sharp Kabushiki Kaisha Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
JP2006019680A (ja) * 2004-06-03 2006-01-19 Sharp Corp 半導体記憶装置およびその製造方法並びに携帯電子機器
JP2006108620A (ja) * 2004-10-01 2006-04-20 Hynix Semiconductor Inc 導電性側壁スペーサを有する不揮発性メモリ装置及びその製造方法
JP2013033984A (ja) * 2004-10-01 2013-02-14 Sk Hynix Inc 導電性側壁スペーサを有する不揮発性メモリ装置及びその製造方法

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