JP2001077218A5 - - Google Patents
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- Publication number
- JP2001077218A5 JP2001077218A5 JP1999254220A JP25422099A JP2001077218A5 JP 2001077218 A5 JP2001077218 A5 JP 2001077218A5 JP 1999254220 A JP1999254220 A JP 1999254220A JP 25422099 A JP25422099 A JP 25422099A JP 2001077218 A5 JP2001077218 A5 JP 2001077218A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- effect transistor
- field
- drain region
- source region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25422099A JP2001077218A (ja) | 1999-09-08 | 1999-09-08 | 電界効果型トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25422099A JP2001077218A (ja) | 1999-09-08 | 1999-09-08 | 電界効果型トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001077218A JP2001077218A (ja) | 2001-03-23 |
| JP2001077218A5 true JP2001077218A5 (enExample) | 2006-10-19 |
Family
ID=17261942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25422099A Pending JP2001077218A (ja) | 1999-09-08 | 1999-09-08 | 電界効果型トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001077218A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7164167B2 (en) | 2001-11-21 | 2007-01-16 | Sharp Kabushiki Kaisha | Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus |
| JP4657681B2 (ja) * | 2004-06-03 | 2011-03-23 | シャープ株式会社 | 半導体記憶装置およびその製造方法並びに携帯電子機器 |
| KR100650369B1 (ko) * | 2004-10-01 | 2006-11-27 | 주식회사 하이닉스반도체 | 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법 |
-
1999
- 1999-09-08 JP JP25422099A patent/JP2001077218A/ja active Pending
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