JP2001044569A5 - - Google Patents

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Publication number
JP2001044569A5
JP2001044569A5 JP2000177538A JP2000177538A JP2001044569A5 JP 2001044569 A5 JP2001044569 A5 JP 2001044569A5 JP 2000177538 A JP2000177538 A JP 2000177538A JP 2000177538 A JP2000177538 A JP 2000177538A JP 2001044569 A5 JP2001044569 A5 JP 2001044569A5
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JP
Japan
Prior art keywords
semiconductor material
dopant
semiconductor
layer
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000177538A
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English (en)
Japanese (ja)
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JP2001044569A (ja
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Publication date
Priority claimed from GB9913900A external-priority patent/GB2351390A/en
Application filed filed Critical
Publication of JP2001044569A publication Critical patent/JP2001044569A/ja
Publication of JP2001044569A5 publication Critical patent/JP2001044569A5/ja
Withdrawn legal-status Critical Current

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JP2000177538A 1999-06-16 2000-06-13 ドープド半導体材料、ドープド半導体材料の製造方法、および半導体デバイス Withdrawn JP2001044569A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9913900A GB2351390A (en) 1999-06-16 1999-06-16 A semiconductor material comprising two dopants
GB9913900.8 1999-06-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009020700A Division JP2009158964A (ja) 1999-06-16 2009-01-30 半導体材料および半導体デバイス

Publications (2)

Publication Number Publication Date
JP2001044569A JP2001044569A (ja) 2001-02-16
JP2001044569A5 true JP2001044569A5 (https=) 2005-10-20

Family

ID=10855379

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000177538A Withdrawn JP2001044569A (ja) 1999-06-16 2000-06-13 ドープド半導体材料、ドープド半導体材料の製造方法、および半導体デバイス
JP2009020700A Pending JP2009158964A (ja) 1999-06-16 2009-01-30 半導体材料および半導体デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009020700A Pending JP2009158964A (ja) 1999-06-16 2009-01-30 半導体材料および半導体デバイス

Country Status (4)

Country Link
US (2) US6426522B1 (https=)
EP (1) EP1061563A3 (https=)
JP (2) JP2001044569A (https=)
GB (1) GB2351390A (https=)

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DE10219345B4 (de) * 2002-04-30 2011-05-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
DE10262373B3 (de) * 2002-04-30 2013-01-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
US6750482B2 (en) * 2002-04-30 2004-06-15 Rf Micro Devices, Inc. Highly conductive semiconductor layer having two or more impurities
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7126052B2 (en) * 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
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US7075165B2 (en) * 2003-05-29 2006-07-11 Applied Material, Inc. Embedded waveguide detectors
EP1627454A4 (en) * 2003-05-29 2007-04-25 Applied Materials Inc ROOM-BASED WAVEGUIDE DETECTORS
DE10329079B4 (de) * 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7205624B2 (en) * 2003-10-07 2007-04-17 Applied Materials, Inc. Self-aligned implanted waveguide detector
US20050214964A1 (en) * 2003-10-07 2005-09-29 Applied Materials, Inc. Patent Counsel, Legal Affairs Dept. Sige super lattice optical detectors
JP2005203520A (ja) * 2004-01-14 2005-07-28 Sumitomo Electric Ind Ltd 半導体発光素子
JP2005236024A (ja) * 2004-02-19 2005-09-02 Fuji Photo Film Co Ltd 半導体レーザ素子
US7172949B2 (en) * 2004-08-09 2007-02-06 Micron Technology, Inc. Epitaxial semiconductor layer and method
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FR2898433B1 (fr) * 2006-03-08 2008-06-06 Commissariat Energie Atomique Procede de preparation d'un semi-conducteur.
DE102006013228A1 (de) * 2006-03-22 2007-09-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
US9142714B2 (en) * 2008-10-09 2015-09-22 Nitek, Inc. High power ultraviolet light emitting diode with superlattice
WO2011112612A1 (en) 2010-03-08 2011-09-15 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
US8575659B1 (en) 2011-08-13 2013-11-05 Hrl Laboratories, Llc Carbon-beryllium combinationally doped semiconductor
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
KR20160054712A (ko) * 2014-11-06 2016-05-17 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 패키지
JP6940866B2 (ja) * 2017-06-21 2021-09-29 国立研究開発法人情報通信研究機構 半導体光デバイス、半導体光源、光集積回路、及び半導体光デバイスの製造方法
TWI640648B (zh) * 2017-11-24 2018-11-11 Institute Of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R. O. C 以有機金屬化學氣相沉積法製作磷化銦鎵磊晶層的方法
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same
US12514033B2 (en) 2021-04-23 2025-12-30 Virginia Commonwealth University P-type beryllium doped gallium nitride semiconductors and methods of production
DE102023117461A1 (de) * 2023-07-03 2025-01-09 Ams-Osram International Gmbh Halbleiterstruktur für ein halbleiterbauelement

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