GB2351390A - A semiconductor material comprising two dopants - Google Patents

A semiconductor material comprising two dopants Download PDF

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Publication number
GB2351390A
GB2351390A GB9913900A GB9913900A GB2351390A GB 2351390 A GB2351390 A GB 2351390A GB 9913900 A GB9913900 A GB 9913900A GB 9913900 A GB9913900 A GB 9913900A GB 2351390 A GB2351390 A GB 2351390A
Authority
GB
United Kingdom
Prior art keywords
dopant
semiconductor material
semiconductor
layer
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9913900A
Other languages
English (en)
Other versions
GB9913900D0 (en
Inventor
Alistair Henderson Kean
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB9913900A priority Critical patent/GB2351390A/en
Publication of GB9913900D0 publication Critical patent/GB9913900D0/en
Priority to JP2000177538A priority patent/JP2001044569A/ja
Priority to US09/594,230 priority patent/US6426522B1/en
Priority to EP00305045A priority patent/EP1061563A3/en
Publication of GB2351390A publication Critical patent/GB2351390A/en
Priority to US10/162,251 priority patent/US6653248B2/en
Priority to JP2009020700A priority patent/JP2009158964A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3206—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3206—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials
    • H01S5/3207—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials ordered active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9913900A 1999-06-16 1999-06-16 A semiconductor material comprising two dopants Withdrawn GB2351390A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9913900A GB2351390A (en) 1999-06-16 1999-06-16 A semiconductor material comprising two dopants
JP2000177538A JP2001044569A (ja) 1999-06-16 2000-06-13 ドープド半導体材料、ドープド半導体材料の製造方法、および半導体デバイス
US09/594,230 US6426522B1 (en) 1999-06-16 2000-06-14 Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
EP00305045A EP1061563A3 (en) 1999-06-16 2000-06-14 Compound semiconductor alloy material with two dopants
US10/162,251 US6653248B2 (en) 1999-06-16 2002-06-04 Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
JP2009020700A JP2009158964A (ja) 1999-06-16 2009-01-30 半導体材料および半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9913900A GB2351390A (en) 1999-06-16 1999-06-16 A semiconductor material comprising two dopants

Publications (2)

Publication Number Publication Date
GB9913900D0 GB9913900D0 (en) 1999-08-18
GB2351390A true GB2351390A (en) 2000-12-27

Family

ID=10855379

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9913900A Withdrawn GB2351390A (en) 1999-06-16 1999-06-16 A semiconductor material comprising two dopants

Country Status (4)

Country Link
US (2) US6426522B1 (https=)
EP (1) EP1061563A3 (https=)
JP (2) JP2001044569A (https=)
GB (1) GB2351390A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6653213B2 (en) * 2000-12-21 2003-11-25 Bookham Technology, Plc Structure and method for doping of III-V compounds
JP4265875B2 (ja) * 2001-05-28 2009-05-20 日本オプネクスト株式会社 面発光半導体レーザの製造方法
DE10219345B4 (de) * 2002-04-30 2011-05-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
DE10262373B3 (de) * 2002-04-30 2013-01-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
US6750482B2 (en) * 2002-04-30 2004-06-15 Rf Micro Devices, Inc. Highly conductive semiconductor layer having two or more impurities
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7126052B2 (en) * 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
JP2007501448A (ja) * 2003-05-29 2007-01-25 アプライド　マテリアルズ　インコーポレイテッド 光学信号の直列経路
US7075165B2 (en) * 2003-05-29 2006-07-11 Applied Material, Inc. Embedded waveguide detectors
EP1627454A4 (en) * 2003-05-29 2007-04-25 Applied Materials Inc ROOM-BASED WAVEGUIDE DETECTORS
DE10329079B4 (de) * 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7205624B2 (en) * 2003-10-07 2007-04-17 Applied Materials, Inc. Self-aligned implanted waveguide detector
US20050214964A1 (en) * 2003-10-07 2005-09-29 Applied Materials, Inc. Patent Counsel, Legal Affairs Dept. Sige super lattice optical detectors
JP2005203520A (ja) * 2004-01-14 2005-07-28 Sumitomo Electric Ind Ltd 半導体発光素子
JP2005236024A (ja) * 2004-02-19 2005-09-02 Fuji Photo Film Co Ltd 半導体レーザ素子
US7172949B2 (en) * 2004-08-09 2007-02-06 Micron Technology, Inc. Epitaxial semiconductor layer and method
WO2007027615A1 (en) * 2005-09-01 2007-03-08 Applied Materials, Inc. Ridge technique for fabricating an optical detector and an optical waveguide
FR2898433B1 (fr) * 2006-03-08 2008-06-06 Commissariat Energie Atomique Procede de preparation d'un semi-conducteur.
DE102006013228A1 (de) * 2006-03-22 2007-09-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
US9142714B2 (en) * 2008-10-09 2015-09-22 Nitek, Inc. High power ultraviolet light emitting diode with superlattice
WO2011112612A1 (en) 2010-03-08 2011-09-15 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
US8575659B1 (en) 2011-08-13 2013-11-05 Hrl Laboratories, Llc Carbon-beryllium combinationally doped semiconductor
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
KR20160054712A (ko) * 2014-11-06 2016-05-17 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 패키지
JP6940866B2 (ja) * 2017-06-21 2021-09-29 国立研究開発法人情報通信研究機構 半導体光デバイス、半導体光源、光集積回路、及び半導体光デバイスの製造方法
TWI640648B (zh) * 2017-11-24 2018-11-11 Institute Of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R. O. C 以有機金屬化學氣相沉積法製作磷化銦鎵磊晶層的方法
US12514033B2 (en) 2021-04-23 2025-12-30 Virginia Commonwealth University P-type beryllium doped gallium nitride semiconductors and methods of production
DE102023117461A1 (de) * 2023-07-03 2025-01-09 Ams-Osram International Gmbh Halbleiterstruktur für ein halbleiterbauelement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1349219A (en) * 1971-08-05 1974-04-03 Rca Corp Process for obtaining diffused semiconductor regions having a reduced number of crystal defects
JPS5856329A (ja) * 1981-09-29 1983-04-04 Nec Corp オ−ミツク電極の形成法
US4871690A (en) * 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
EP0475618A2 (en) * 1990-09-13 1992-03-18 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser device
WO1997036318A2 (en) * 1996-03-27 1997-10-02 Abb Research Ltd. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC AND SUCH A DEVICE
US5766981A (en) * 1995-01-04 1998-06-16 Xerox Corporation Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163821A (ja) * 1983-03-09 1984-09-14 Hitachi Ltd 液相エピタキシヤル成長方法
US4727556A (en) * 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
JPH0410486A (ja) * 1990-04-26 1992-01-14 Sanyo Electric Co Ltd 半導体レーザの製造方法
GB2248966A (en) * 1990-10-19 1992-04-22 Philips Electronic Associated Field effect semiconductor devices
US5132763A (en) * 1991-02-07 1992-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration InAs hole-immobilized doping superlattice long-wave-infrared detector
US5270246A (en) * 1991-06-18 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor multi-layer film and semiconductor laser
JPH06302909A (ja) * 1993-04-19 1994-10-28 Fuji Xerox Co Ltd 半導体レーザ装置
US5395793A (en) * 1993-12-23 1995-03-07 National Research Council Of Canada Method of bandgap tuning of semiconductor quantum well structures
US5376583A (en) * 1993-12-29 1994-12-27 Xerox Corporation Method for producing P-type impurity induced layer disordering
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
US5708674A (en) * 1995-01-03 1998-01-13 Xerox Corporation Semiconductor laser or array formed by layer intermixing
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
JPH11112075A (ja) * 1997-09-30 1999-04-23 Fujitsu Ltd 半導体レーザ装置及びその製造方法
US6064683A (en) * 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1349219A (en) * 1971-08-05 1974-04-03 Rca Corp Process for obtaining diffused semiconductor regions having a reduced number of crystal defects
JPS5856329A (ja) * 1981-09-29 1983-04-04 Nec Corp オ−ミツク電極の形成法
US4871690A (en) * 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
EP0475618A2 (en) * 1990-09-13 1992-03-18 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser device
US5766981A (en) * 1995-01-04 1998-06-16 Xerox Corporation Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD
WO1997036318A2 (en) * 1996-03-27 1997-10-02 Abb Research Ltd. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC AND SUCH A DEVICE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same

Also Published As

Publication number Publication date
JP2009158964A (ja) 2009-07-16
US20020149030A1 (en) 2002-10-17
GB9913900D0 (en) 1999-08-18
EP1061563A2 (en) 2000-12-20
US6426522B1 (en) 2002-07-30
JP2001044569A (ja) 2001-02-16
EP1061563A3 (en) 2003-01-02
US6653248B2 (en) 2003-11-25

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