JP2001028443A5 - - Google Patents

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Publication number
JP2001028443A5
JP2001028443A5 JP2000143424A JP2000143424A JP2001028443A5 JP 2001028443 A5 JP2001028443 A5 JP 2001028443A5 JP 2000143424 A JP2000143424 A JP 2000143424A JP 2000143424 A JP2000143424 A JP 2000143424A JP 2001028443 A5 JP2001028443 A5 JP 2001028443A5
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JP
Japan
Prior art keywords
region
insulating film
semiconductor
conductive region
channel
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JP2000143424A
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English (en)
Japanese (ja)
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JP3936830B2 (ja
JP2001028443A (ja
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Priority to JP2000143424A priority Critical patent/JP3936830B2/ja
Priority claimed from JP2000143424A external-priority patent/JP3936830B2/ja
Publication of JP2001028443A publication Critical patent/JP2001028443A/ja
Publication of JP2001028443A5 publication Critical patent/JP2001028443A5/ja
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Publication of JP3936830B2 publication Critical patent/JP3936830B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000143424A 1999-05-13 2000-05-11 半導体装置 Expired - Fee Related JP3936830B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000143424A JP3936830B2 (ja) 1999-05-13 2000-05-11 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13233299 1999-05-13
JP11-132332 1999-05-13
JP2000143424A JP3936830B2 (ja) 1999-05-13 2000-05-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2001028443A JP2001028443A (ja) 2001-01-30
JP2001028443A5 true JP2001028443A5 (enExample) 2005-01-06
JP3936830B2 JP3936830B2 (ja) 2007-06-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000143424A Expired - Fee Related JP3936830B2 (ja) 1999-05-13 2000-05-11 半導体装置

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JP (1) JP3936830B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068883A (ja) * 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
JP2004221242A (ja) 2003-01-14 2004-08-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2004253730A (ja) 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US6830963B1 (en) * 2003-10-09 2004-12-14 Micron Technology, Inc. Fully depleted silicon-on-insulator CMOS logic
WO2009110050A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置の製造方法
JP5583933B2 (ja) * 2009-07-28 2014-09-03 猛英 白土 半導体装置及びその製造方法
KR101752348B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101752518B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101861980B1 (ko) 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101752212B1 (ko) * 2009-11-20 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065258A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102714208B (zh) * 2010-01-15 2015-05-20 株式会社半导体能源研究所 半导体装置
KR101299256B1 (ko) * 2010-01-29 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101926336B1 (ko) * 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101891065B1 (ko) 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145738A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
CN102339828B (zh) * 2010-07-19 2013-04-24 中国科学院微电子研究所 低功耗半导体存储器及其驱动方法
US8467231B2 (en) * 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5743790B2 (ja) * 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 半導体装置
US8467232B2 (en) * 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8520426B2 (en) * 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
KR101952733B1 (ko) 2010-11-05 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2013125102A (ja) * 2011-12-13 2013-06-24 Samsung Yokohama Research Institute Co Ltd 微細周期構造を用いた光学フィルタ、偏光素子及び光学シャッタ
JP6100559B2 (ja) * 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
JP2014179465A (ja) * 2013-03-14 2014-09-25 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
US9773787B2 (en) * 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
JP6822853B2 (ja) * 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
CN116981246A (zh) * 2022-04-15 2023-10-31 华为技术有限公司 存储阵列及存储阵列的制备方法

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