JP2001015770A5 - - Google Patents

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Publication number
JP2001015770A5
JP2001015770A5 JP1999186547A JP18654799A JP2001015770A5 JP 2001015770 A5 JP2001015770 A5 JP 2001015770A5 JP 1999186547 A JP1999186547 A JP 1999186547A JP 18654799 A JP18654799 A JP 18654799A JP 2001015770 A5 JP2001015770 A5 JP 2001015770A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
resistance semiconductor
conductivity type
low
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP1999186547A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015770A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11186547A priority Critical patent/JP2001015770A/ja
Priority claimed from JP11186547A external-priority patent/JP2001015770A/ja
Publication of JP2001015770A publication Critical patent/JP2001015770A/ja
Publication of JP2001015770A5 publication Critical patent/JP2001015770A5/ja
Abandoned legal-status Critical Current

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JP11186547A 1999-06-30 1999-06-30 電力用半導体素子 Abandoned JP2001015770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11186547A JP2001015770A (ja) 1999-06-30 1999-06-30 電力用半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11186547A JP2001015770A (ja) 1999-06-30 1999-06-30 電力用半導体素子

Publications (2)

Publication Number Publication Date
JP2001015770A JP2001015770A (ja) 2001-01-19
JP2001015770A5 true JP2001015770A5 (enExample) 2005-03-03

Family

ID=16190428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11186547A Abandoned JP2001015770A (ja) 1999-06-30 1999-06-30 電力用半導体素子

Country Status (1)

Country Link
JP (1) JP2001015770A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013187344A (ja) * 2012-03-08 2013-09-19 Hitachi Ltd 半導体装置及びその製造方法
CN105990153B (zh) * 2015-03-04 2019-05-28 北大方正集团有限公司 功率器件的分压结构的制备方法和功率器件
EP4152413A1 (en) * 2021-09-15 2023-03-22 Hitachi Energy Switzerland AG Power diode and method for producing a power diode

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