JP2001015770A - 電力用半導体素子 - Google Patents

電力用半導体素子

Info

Publication number
JP2001015770A
JP2001015770A JP11186547A JP18654799A JP2001015770A JP 2001015770 A JP2001015770 A JP 2001015770A JP 11186547 A JP11186547 A JP 11186547A JP 18654799 A JP18654799 A JP 18654799A JP 2001015770 A JP2001015770 A JP 2001015770A
Authority
JP
Japan
Prior art keywords
type
semiconductor layer
resistance semiconductor
layer
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP11186547A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015770A5 (enExample
Inventor
Masanori Fuda
正則 附田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11186547A priority Critical patent/JP2001015770A/ja
Publication of JP2001015770A publication Critical patent/JP2001015770A/ja
Publication of JP2001015770A5 publication Critical patent/JP2001015770A5/ja
Abandoned legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP11186547A 1999-06-30 1999-06-30 電力用半導体素子 Abandoned JP2001015770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11186547A JP2001015770A (ja) 1999-06-30 1999-06-30 電力用半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11186547A JP2001015770A (ja) 1999-06-30 1999-06-30 電力用半導体素子

Publications (2)

Publication Number Publication Date
JP2001015770A true JP2001015770A (ja) 2001-01-19
JP2001015770A5 JP2001015770A5 (enExample) 2005-03-03

Family

ID=16190428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11186547A Abandoned JP2001015770A (ja) 1999-06-30 1999-06-30 電力用半導体素子

Country Status (1)

Country Link
JP (1) JP2001015770A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013187344A (ja) * 2012-03-08 2013-09-19 Hitachi Ltd 半導体装置及びその製造方法
CN105990153A (zh) * 2015-03-04 2016-10-05 北大方正集团有限公司 功率器件的分压结构的制备方法和功率器件
JP2024531748A (ja) * 2021-09-15 2024-08-29 ヒタチ・エナジー・リミテッド パワーダイオードおよびパワーダイオードを製造するための方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013187344A (ja) * 2012-03-08 2013-09-19 Hitachi Ltd 半導体装置及びその製造方法
CN105990153A (zh) * 2015-03-04 2016-10-05 北大方正集团有限公司 功率器件的分压结构的制备方法和功率器件
JP2024531748A (ja) * 2021-09-15 2024-08-29 ヒタチ・エナジー・リミテッド パワーダイオードおよびパワーダイオードを製造するための方法
JP7719958B2 (ja) 2021-09-15 2025-08-06 ヒタチ・エナジー・リミテッド パワーダイオードおよびパワーダイオードを製造するための方法

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