JP2001007142A - Capillary for wire bonding, and method of connecting electronic parts - Google Patents

Capillary for wire bonding, and method of connecting electronic parts

Info

Publication number
JP2001007142A
JP2001007142A JP11180454A JP18045499A JP2001007142A JP 2001007142 A JP2001007142 A JP 2001007142A JP 11180454 A JP11180454 A JP 11180454A JP 18045499 A JP18045499 A JP 18045499A JP 2001007142 A JP2001007142 A JP 2001007142A
Authority
JP
Japan
Prior art keywords
capillary
wire
bonding
conductor
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11180454A
Other languages
Japanese (ja)
Inventor
Yukihiro Maeda
幸宏 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP11180454A priority Critical patent/JP2001007142A/en
Publication of JP2001007142A publication Critical patent/JP2001007142A/en
Pending legal-status Critical Current

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Classifications

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance the productivity without stopping the bonding process when connecting electronic parts by wire bonding, by providing a capillary favorable in wire cutting property in wire bonding. SOLUTION: A capillary 7 is equipped with an outer pressing section 7a which is made aslant on the outside periphery of the tip, and a roughly conical inner pressing part 7b which is made at a specified tilt angle B of 4-20 deg. on the inside periphery of the tip. A ball is made at the tip of the capillary by wire material 5, and the ball is pressure-welded to the second conductor 4 by the capillary 7, and the tip of the capillary 7b is pressed against the vicinity of a bump on a circuit board, and the wire material 5 is cut to form a bump 6 on the second conductor 4. Then, wire bonding is performed with the primary side first conductor and also the secondary side bump 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ用キャピラリおよび第１導体（例えばＩＣチップのパ
ッド）と第２導体（例えば回路基板のランド）とをワイ
ヤボンディングで形成された導線によって電気的に接続
する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding capillary and a first conductor (for example, a pad of an IC chip) and a second conductor (for example, a land of a circuit board) which are electrically connected by a conductive wire formed by wire bonding. Regarding how to connect.

【０００２】[0002]

【従来の技術】ＩＣチップおよび回路基板とをＡｕワイ
ヤを用いたワイヤボンディングにて電気的に接続する場
合に、一般に、回路基板上の配線（ランド）の材料がＣ
ｕ等のようなＡｕワイヤとの接合性の悪い材料である
と、ランド上に直接ボンディングを行うことができない
とされている。このような回路基板でＩＣチップのパッ
ド（第１導体）と回路基板のランド（第２導体）とは、
以下のようにワイヤボンディングによって接合される。2. Description of the Related Art When an IC chip and a circuit board are electrically connected to each other by wire bonding using an Au wire, generally, the material of a wiring (land) on the circuit board is C.
It is said that a material such as u, which has a poor bonding property with the Au wire, cannot be directly bonded on the land. In such a circuit board, the pad (first conductor) of the IC chip and the land (second conductor) of the circuit board are:
It is joined by wire bonding as follows.

【０００３】まず、キャピラリを用いて、回路基板のラ
ンド上にＡｕワイヤにて予め接合性のよいボールボンデ
ィングを行ってバンプを形成し、バンプ近傍のランド上
にキャピラリの先端部を押し付けてＡｕワイヤを切断す
る。そして、ＩＣチップのパッド上にボールボンディン
グによって１次ボンディングを行い、続いてバンプにウ
ェッジボンディングによって２次ボンディングを行う。[0003] First, using a capillary, a bump is formed in advance on a land of a circuit board with an Au wire by performing ball bonding with good bonding properties, and the tip of the capillary is pressed onto the land near the bump by pressing the Au wire. Disconnect. Then, primary bonding is performed on the pads of the IC chip by ball bonding, and then secondary bonding is performed on the bumps by wedge bonding.

【０００４】このように、回路基板のＣｕ等のランドと
Ａｕワイヤは接合性のよいボールボンディングで接合
し、さらにランド上のバンプとＡｕワイヤは通常のウェ
ッジボンディングで同質同材のＡｕ同士の接合を行うこ
とによって良好な接合を得ることができる。As described above, a land such as Cu on a circuit board and an Au wire are bonded by ball bonding with good bonding properties, and a bump on the land and the Au wire are bonded to each other by the same wedge bonding between Au of the same material. , Good bonding can be obtained.

【０００５】ここで、ワイヤボンディングで一般的に用
いられるキャピラリについて、図５に基づいて説明す
る。図５はキャピラリ先端部の拡大断面図である。図５
に示すように、キャピラリ先端部の外周側に外側押付部
Ｊ７ａが形成されており、キャピラリ先端部の内周側に
は内側押付部Ｊ７ｂが形成されている。外側押付部Ｊ７
ａはＡｕワイヤを被接合部に高い強度で接合させるため
に、ランドとの間の角度Ａが０〜８°となるように形成
されており、内側押付部Ｊ７ｂは被接合部（ランド）に
ワイヤを弱く押し付けて仮接合させるために、ランドと
の間の角度Ｂが３０〜４５°となるように形成されてい
る。Here, a capillary generally used in wire bonding will be described with reference to FIG. FIG. 5 is an enlarged sectional view of the tip of the capillary. FIG.
As shown in (1), an outer pressing portion J7a is formed on the outer peripheral side of the capillary tip portion, and an inner pressing portion J7b is formed on the inner peripheral side of the capillary tip portion. Outside pressing part J7
a is formed so that the angle A between the land and the land is 0 to 8 ° in order to bond the Au wire to the part to be bonded with high strength, and the inner pressing part J7b is formed on the part to be bonded (land). The angle B between the wire and the land is set to 30 to 45 [deg.] In order to press the wire weakly and temporarily join the wire.

【０００６】このキャピラリを用いて、上記ワイヤボン
ディング工程においてバンプ形成後に行うＡｕワイヤの
切断は次のように行われる。まず、ボールボンディング
によって形成したバンプ近傍のランド上にキャピラリ先
端を押し付けてワイヤを切断すると同時に、超音波振動
と熱拡散によってＡｕワイヤとランドとを接合させる。[0006] Using this capillary, the cutting of the Au wire performed after the bump is formed in the wire bonding step is performed as follows. First, the tip of the capillary is pressed onto the land near the bump formed by ball bonding to cut the wire, and at the same time, the Au wire and the land are joined by ultrasonic vibration and thermal diffusion.

【０００７】次に、キャピラリは所定高さまで引き上げ
られる。このとき、ワイヤは被接合部に仮接合されてい
るので、キャピラリから所定量のワイヤが繰り出される
ことになる。これにより次のボールボンディングのボー
ル形成用のワイヤが確保される。Next, the capillary is raised to a predetermined height. At this time, since the wire is temporarily bonded to the portion to be bonded, a predetermined amount of the wire is fed from the capillary. As a result, a wire for forming a ball for the next ball bonding is secured.

【０００８】次に、ワイヤはキャピラリの上部でクラン
プされ、さらにキャピラリは上方に引き上げられる。こ
のとき、ワイヤとランドとは仮接合状態であって接合強
度が低いため、ワイヤはランドから簡単に引き剥がされ
る。その後、キャピラリから所定量引き出されたワイヤ
に電気トーチで放電して溶解させ、次のボールボンディ
ングのためのボールを形成する。Next, the wire is clamped at the top of the capillary, and the capillary is pulled up. At this time, since the wire and the land are in a temporary bonding state and have low bonding strength, the wire is easily peeled off from the land. Thereafter, the wire drawn out from the capillary by a predetermined amount is discharged and melted by an electric torch to form a ball for the next ball bonding.

【０００９】[0009]

【発明が解決しようとする課題】しかしながら、ランド
がＡｕワイヤに対して接合性の悪いＣｕ等からなる場合
には、以下の問題がある。この点についてキャピラリに
よるワイヤの切断手順を示す図６に基づいて説明する。However, when the land is made of Cu or the like which has poor bonding properties to the Au wire, the following problems arise. This point will be described with reference to FIG. 6 showing a procedure for cutting a wire by a capillary.

【００１０】すなわち、上記従来技術のキャピラリでは
内側押付部Ｊ７ｂにおける回路基板とのなす角度Ｂが３
０〜４５°程度であり、外側押付部Ｊ７ａに比較してワ
イヤを接合させる能力が低い。被接合材料がＡｇめっき
を施したリードフレームのような一般的に用いられるも
のである場合には、ＡｇめっきとＡｕワイヤとの接合性
がよいため、上記角度Ａを有するキャピラリ先端でワイ
ヤを押し付けても十分な接合強度を得られる。That is, in the conventional capillary described above, the angle B between the inner pressing portion J7b and the circuit board is 3 °.
It is about 0 to 45 °, and the ability to join wires is lower than that of the outer pressing portion J7a. When the material to be bonded is a commonly used material such as a lead frame plated with Ag, the bonding property between the Ag plating and the Au wire is good, so that the wire is pressed with the tip of the capillary having the above angle A. However, sufficient bonding strength can be obtained.

【００１１】これに対し、ランドがＡｕワイヤとの接合
性の悪いＣｕめっき等である場合には、キャピラリＪ７
をランドＪ４に押し付けてワイヤＪ５を切断した後（図
６（ａ））、キャピラリＪ７を引き上げる際にワイヤＪ
５がランドＪ４から簡単に引き剥がされてしまい、キャ
ピラリＪ７からワイヤＪ５を引き出せなくなってしまう
（図６（ｂ））。この場合、電気トーチＪ８による放電
を行ってもワイヤがないため放電が起こらず、次のボー
ルボンディングのためのボールを作成することができな
くなる（図６（ｃ））。このため、ボンディング工程が
停止してしまい生産性が低下する。On the other hand, when the land is made of Cu plating or the like having poor bonding properties with the Au wire, the capillary J7
Is pressed against the land J4 to cut the wire J5 (FIG. 6 (a)).
5 is easily peeled off from the land J4, and the wire J5 cannot be pulled out from the capillary J7 (FIG. 6B). In this case, even if the discharge is performed by the electric torch J8, no discharge occurs because there is no wire, and it becomes impossible to form a ball for the next ball bonding (FIG. 6C). For this reason, the bonding process is stopped and productivity is reduced.

【００１２】さらに、上記理由によりボンディング工程
の停止が頻発すると、生産性が悪化するだけでなくボン
ディングに時間がかかりすぎることになる。このため、
Ｃｕ等の酸化しやすい配線材料を使用している場合に
は、ランドが酸化されてしまい、ボンディングそのもの
ができなくなるといった不具合が発生する。Further, if the bonding process is frequently stopped for the above-mentioned reason, not only does productivity deteriorate, but also it takes too much time for bonding. For this reason,
If a wiring material that is easily oxidized, such as Cu, is used, the lands are oxidized, and the bonding itself cannot be performed.

【００１３】本発明は、上記点に鑑み、ワイヤボンディ
ングにおいてワイヤ切断性の良好なキャピラリを提供
し、電子部品をワイヤボンディングにて接続する際に、
ボンディング工程を停止させることなく生産性を向上さ
せることを目的とする。In view of the above, the present invention provides a capillary having a good wire cutting property in wire bonding, and when connecting an electronic component by wire bonding,
An object is to improve productivity without stopping a bonding step.

【００１４】[0014]

【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明では、ワイヤボンディングに
用いられるキャピラリ（７）であって、キャピラリ先端
部の外周側に傾斜状に形成された外側押付部（７ａ）
と、キャピラリ先端部の内周側に４〜２０°の所定傾斜
角度（Ｂ）をもって形成された略円錐形状の内側押付部
（７ｂ）とを備えることを特徴としている。In order to achieve the above object, according to the first aspect of the present invention, there is provided a capillary (7) used for wire bonding, wherein the capillary (7) is formed so as to be inclined on the outer peripheral side of the tip of the capillary. Outside pressing part (7a)
And a substantially conical inner pressing portion (7b) formed at a predetermined inclination angle (B) of 4 to 20 ° on the inner peripheral side of the tip of the capillary.

【００１５】このような構成にすることにより、内側押
付部（７ｂ）によって線材（５）を配線（４）に強く押
し付けることが可能となる。従って、このキャピラリ
を、線材（５）と、線材（５）と接合性の低い材料から
形成される配線（４）を接合するワイヤボンディングに
用いた場合でも、線材（５）を配線（４）上に確実に接
合させることができ、キャピラリを上方に移動させたと
きに線材（５）が配線（４）から簡単に引き剥がされる
ことを防止できる。With this configuration, the wire (5) can be strongly pressed against the wiring (4) by the inner pressing portion (7b). Therefore, even when this capillary is used for wire bonding for joining the wire (5) and the wire (4) formed of a material having low bonding property with the wire (5), the wire (5) is connected to the wire (4). The wire (5) can be prevented from being easily peeled off from the wiring (4) when the capillary is moved upward.

【００１６】また、請求項２に記載の発明では、第１導
体（３ａ）および第２導体（４）とをキャピラリ（７）
を用いてワイヤボンディングによって電気的に接続する
方法であって、キャピラリ先端部の外周側に傾斜状に形
成された外側押付部（７ａ）と、キャピラリ先端部の内
周側に４〜２０°の所定傾斜角度（Ｂ）をもって形成さ
れた略円錐形状の内側押付部（７ｂ）とを備えるキャピ
ラリ（７）を用い、キャピラリ（７）の先端に線材
（５）によってボール（５ａ）を形成し、キャピラリ
（７）によってボール（５ａ）を第２導体（４）に圧着
させた後、キャピラリ（７）の先端を回路基板（１）に
おけるバンプ近傍に押し付けて線材（５）を切断し、第
２導体（４）上にバンプ（６）を形成するバンプ形成工
程と、バンプ形成工程の後、第１導体（３ａ）を１次側
とするとともにバンプ（６）を２次側としてワイヤボン
ディングを行うことにより導線（１０）を形成し、第１
導体（３ａ）および第２導体（４）とを電気的に接続す
るボンディング工程とを備えることことを特徴としてい
る。According to the second aspect of the present invention, the first conductor (3a) and the second conductor (4) are connected to the capillary (7).
And a method of electrically connecting by wire bonding using an outer pressing portion (7a) formed to be inclined on the outer peripheral side of the tip of the capillary, and a 4 to 20 ° angle on the inner peripheral side of the tip of the capillary. A ball (5a) is formed by a wire (5) at the tip of the capillary (7) using a capillary (7) having a substantially conical inner pressing portion (7b) formed at a predetermined inclination angle (B), After the ball (5a) is pressed against the second conductor (4) by the capillary (7), the tip of the capillary (7) is pressed against the vicinity of the bump on the circuit board (1) to cut the wire (5). After the bump forming step of forming the bump (6) on the conductor (4) and the bump forming step, wire bonding is performed with the first conductor (3a) as the primary side and the bump (6) as the secondary side. By Forming a conductor (10), first
A bonding step of electrically connecting the conductor (3a) and the second conductor (4).

【００１７】これにより、被接合材料としての第２導体
（４）が、線材（５）との接合性の低い材料から形成さ
れる場合であっても、ボンディング工程の途中でボンデ
ィング装置が停止することなく生産性を向上させること
ができるなお、上記各手段の括弧内の符号は、後述する
実施形態に記載の具体的手段との対応関係を示すもので
ある。Thus, even when the second conductor (4) as the material to be joined is formed of a material having low bonding property with the wire (5), the bonding apparatus stops during the bonding process. It is to be noted that the reference numerals in parentheses of the above-described units indicate the correspondence with specific units described in the embodiments described later.

【００１８】[0018]

【発明の実施の形態】以下、本発明を適用したワイヤボ
ンディング用キャピラリを用いたＩＣチップと回路基板
との接続方法について図に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for connecting an IC chip to a circuit board using a wire bonding capillary to which the present invention is applied will be described below with reference to the drawings.

【００１９】まず、本発明を適用したワイヤボンディン
グ用キャピラリの構成について図１に基づいて説明す
る。なお、図１はキャピラリ先端部の拡大断面図を示し
ている。First, the configuration of a capillary for wire bonding to which the present invention is applied will be described with reference to FIG. FIG. 1 is an enlarged cross-sectional view of the tip of the capillary.

【００２０】このキャピラリ７は中心にＡｕワイヤ５を
通すために貫通穴７ｄが形成されている。キャピラリ先
端部の外周側には傾斜状に形成された外側押付部７ａが
形成されており、キャピラリ先端部の内周側には所定傾
斜角度を有する円錐形状の内側押付部７ｂが形成されて
いる。The capillary 7 has a through hole 7d formed at the center for passing the Au wire 5. An outer pressing portion 7a formed in an inclined shape is formed on the outer peripheral side of the capillary tip portion, and a conical inner pressing portion 7b having a predetermined inclination angle is formed on the inner peripheral side of the capillary tip portion. .

【００２１】外側押付部７ａは、ＩＣチップ３上のパッ
ド（第１導体）３ａからルーピングされたワイヤ５を被
接合部材としてのランド（第２導体）４に接続するため
にワイヤ５を押し付けるためのものである。従って、０
〜８°の傾斜角度Ａがつけられており、ワイヤを強く被
接合部に押し付けてワイヤの変形を大きくすることによ
って高い接合を得る。The outer pressing portion 7a presses the wire 5 to connect the wire 5 looped from the pad (first conductor) 3a on the IC chip 3 to the land (second conductor) 4 as a member to be joined. belongs to. Therefore, 0
A tilt angle A of ８8 ° is provided, and a high bonding is obtained by strongly pressing the wire against the portion to be bonded to increase the deformation of the wire.

【００２２】一方、内側押付部７ｂは、ワイヤ５と被接
合部材４を仮接合させるためのものである。しかしなが
ら、被接合部材４がＡｕワイヤ５と接合性の悪いＣｕ等
からなる場合には外側押付部７ａと同等のワイヤ変形を
起こさせて接合させる必要がある。従って、本実施形態
における内側押付部７ｂは、回路基板１との間に４〜２
０°の所定傾斜角度Ｂが設けられている。この所定傾斜
角度Ｂは、被接合部材４とワイヤ５との接合強度を確保
する点で４〜１０°とすることが好ましい。On the other hand, the inner pressing portion 7b is for temporarily joining the wire 5 and the member 4 to be joined. However, when the member to be bonded 4 is made of Cu or the like having poor bonding properties with the Au wire 5, it is necessary to cause wire deformation equivalent to that of the outer pressing portion 7a to perform bonding. Accordingly, the inner pressing portion 7b in the present embodiment is located between
A predetermined inclination angle B of 0 ° is provided. The predetermined inclination angle B is preferably 4 to 10 ° from the viewpoint of securing the bonding strength between the member 4 to be bonded and the wire 5.

【００２３】また、従来のキャピラリではＣＤ寸法（キ
ャピラリの下端部直径）は５０〜６０μｍであるのに対
し、本実施形態ではＣＤ寸法を７０〜９０μｍとしてい
る。これにより、ワイヤ５の接合長が長くなって、ワイ
ヤ５とランド４との接合強度を向上させることができ
る。In the conventional capillary, the CD dimension (diameter at the lower end of the capillary) is 50 to 60 μm, whereas in the present embodiment, the CD dimension is 70 to 90 μm. Thereby, the bonding length of the wire 5 is increased, and the bonding strength between the wire 5 and the land 4 can be improved.

【００２４】なお、本実施形態では径３０μｍのＡｕワ
イヤ５を用いているが、本実施形態のキャピラリの各寸
法を変更することにより、他の線径のワイヤを用いた場
合においても適用可能である。In the present embodiment, the Au wire 5 having a diameter of 30 μm is used. However, by changing the dimensions of the capillary of the present embodiment, the present invention can be applied to the case where wires having other wire diameters are used. is there.

【００２５】以下、図２から図４に基づいてＩＣチップ
と回路基板の接続工程を順に説明する。図２から図４
は、本発明の実施形態に係るＩＣチップ３と回路基板１
との接続方法を示す工程図である。Hereinafter, the steps of connecting the IC chip and the circuit board will be described in order with reference to FIGS. 2 to 4
Are the IC chip 3 and the circuit board 1 according to the embodiment of the present invention.
FIG. 4 is a process chart showing a method of connecting to the device.

【００２６】まず、回路基板（セラミック基板やプリン
ト基板などの基板）１を用意する。First, a circuit board (a board such as a ceramic board or a printed board) 1 is prepared.

【００２７】この回路基板１の一面上には、ワイヤボン
ディングすべきＩＣチップ３が複数設置されている。こ
のＩＣチップ３は、ダイマウントペースト２（例えばは
んだやＡｇペースト）により回路基板１上にダイマウン
トされており、ＩＣチップ３上には、ＩＣチップ３の内
部回路と電気的に接続されたパッド３ａが設けられてい
る。一方、回路基板１の一面上のうちＩＣチップ３の設
置領域と異なる部分には、Ｃｕ、Ｎｉ、フラッシュＡｕ
めっき等のようにＡｕワイヤと接合性の悪い配線材料を
用いたランド４が形成されている。On one surface of the circuit board 1, a plurality of IC chips 3 to be wire-bonded are provided. The IC chip 3 is die-mounted on the circuit board 1 with a die mount paste 2 (for example, solder or Ag paste), and a pad electrically connected to an internal circuit of the IC chip 3 is provided on the IC chip 3. 3a is provided. On the other hand, on one surface of the circuit board 1 which is different from the installation region of the IC chip 3, Cu, Ni, flash Au
The lands 4 are formed using a wiring material such as plating which has poor bonding properties with the Au wire.

【００２８】そして、図１、図２に示すように、このラ
ンド４上に、Ａｕよりなる凸状のＡｕバンプ６を、Ａｕ
ワイヤ５を用いてボールボンディングにより形成する。
これは、ＩＣチップ３のパッド３ａとランド４との間を
Ａｕワイヤ５を用いてワイヤボンディングして後述の導
線１０を形成する場合に、Ａｕバンプ６と導線１０とを
同質材質のＡｕにより構成することにより、導線１０の
接合性を良くするためである。Then, as shown in FIGS. 1 and 2, a convex Au bump 6 made of Au is
It is formed by ball bonding using the wire 5.
In this case, when a wire 10 to be described later is formed by wire bonding between the pad 3a of the IC chip 3 and the land 4 using an Au wire 5, the Au bump 6 and the wire 10 are made of Au of the same material. By doing so, the bonding property of the conductive wire 10 is improved.

【００２９】具体的には、図１（ａ）に示すように、キ
ャピラリ７の貫通孔７ｄにＡｕワイヤ５を挿通した状態
で、トーチ電極８からの放電によりキャピラリ７から突
出したＡｕワイヤ５の先端を溶融させてボール５ａを形
成する。Specifically, as shown in FIG. 1A, in a state where the Au wire 5 is inserted into the through hole 7d of the capillary 7, the Au wire 5 protruding from the capillary 7 by the discharge from the torch electrode 8 is formed. The ball 5a is formed by melting the tip.

【００３０】次に、図１（ｂ）に示すように、キャピラ
リ７によってボール５ａをランド４上に押し付けてボー
ルボンディングを行う。このボールボンディングによっ
てＡｕバンプ６を形成する。Next, as shown in FIG. 1B, the ball 5a is pressed onto the land 4 by the capillary 7 to perform ball bonding. The Au bump 6 is formed by this ball bonding.

【００３１】次に、図１（ｃ）に示すように、キャピラ
リ内に残っているＡｕワイヤ７を切断する。まず、キャ
ピラリ７を上方に移動させ、次にＩＣチップ３の搭載位
置の反対側（図１中右側）に移動させ、バンプ６近傍の
ランド４上まで移動したところで下方に移動させる。そ
して、ランド４上にキャピラリ７の先端を押し当て、ボ
ンディングの条件である荷重等を調整してウェッジボン
ディングを行う。これにより、Ａｕバンプ６から延びる
Ａｕワイヤ５を切断する。Next, as shown in FIG. 1C, the Au wire 7 remaining in the capillary is cut. First, the capillary 7 is moved upward, and then moved to the opposite side (the right side in FIG. 1) of the mounting position of the IC chip 3, and is moved downward when it moves to the land 4 near the bump 6. Then, the tip of the capillary 7 is pressed against the land 4 and wedge bonding is performed by adjusting the load and the like as bonding conditions. Thereby, the Au wire 5 extending from the Au bump 6 is cut.

【００３２】キャピラリ先端をランド４に押し付けるこ
とによって、切断されたＡｕワイヤ５のＡｕバンプ側
は、外側押付部７ａによってランド４に押し付けられ、
また、Ａｕワイヤ５のキャピラリ側は、キャピラリ７の
内側押付部７ｂによってランド４に押し付けられる。こ
のとき、本実施形態におけるキャピラリ７は従来技術の
キャピラリに比較して内側押付部７ｂの傾斜角度Ｂが小
さいので、内側押付部７ｂによってＡｕワイヤ５をラン
ド４に強く押しつけることができる。これにより、ワイ
ヤとランドとの強い接合を得ることができる。By pressing the tip of the capillary against the land 4, the Au bump side of the cut Au wire 5 is pressed against the land 4 by the outer pressing portion 7a.
The capillary side of the Au wire 5 is pressed against the land 4 by the inner pressing portion 7 b of the capillary 7. At this time, since the inclination angle B of the inner pressing portion 7b of the capillary 7 in the present embodiment is smaller than that of the conventional capillary, the Au wire 5 can be pressed strongly against the land 4 by the inner pressing portion 7b. Thereby, a strong bond between the wire and the land can be obtained.

【００３３】次に、図２（ａ）に示すように、キャピラ
リ７を所定高さまで引き上げる。このとき、Ａｕワイヤ
５はランド上に仮接合されているので、Ａｕワイヤ５は
キャピラリから所定量（例えば１ｍｍ）が繰り出される
ことになる。これにより次のボールボンディング用のボ
ールを作るためのワイヤが確保される。Next, as shown in FIG. 2A, the capillary 7 is pulled up to a predetermined height. At this time, since the Au wire 5 is temporarily bonded on the land, a predetermined amount (for example, 1 mm) of the Au wire 5 is extended from the capillary. This secures a wire for making the next ball bonding ball.

【００３４】次に、図２（ｂ）に示すように、キャピラ
リ７の先端から所定量のワイヤ５が引き出された段階で
キャピラリ上部にあるワイヤクランパを閉じてワイヤ５
をクランプし、さらにキャピラリ７を上方に引き上げ
る。このとき、ワイヤ５とランド４とは仮接合状態であ
って接合強度が低いため、ワイヤ５はランド４から簡単
に引き剥がされる。Next, as shown in FIG. 2B, when a predetermined amount of the wire 5 is pulled out from the tip of the capillary 7, the wire clamper on the upper portion of the capillary is closed and the wire 5 is closed.
Is clamped, and the capillary 7 is further pulled upward. At this time, since the wire 5 and the land 4 are in a temporary bonding state and have low bonding strength, the wire 5 is easily peeled off from the land 4.

【００３５】その後、図２（ｃ）に示すように、キャピ
ラリ７から所定量引き出されたワイヤ５に電気トーチ８
で放電して溶解させ、Ａｕワイヤ５の先端に次のボール
ボンディングのためのボール５ａを形成する。Thereafter, as shown in FIG. 2C, an electric torch 8 is attached to the wire 5 pulled out from the capillary 7 by a predetermined amount.
To form a ball 5a at the tip of the Au wire 5 for the next ball bonding.

【００３６】以上の図１、図２に示す工程を順次繰り返
し、ＩＣチップ３とのワイヤボンディングの２次側とな
るすべてのランド４上にＡｕバンプ６を形成していく。The steps shown in FIGS. 1 and 2 are sequentially repeated to form Au bumps 6 on all lands 4 on the secondary side of wire bonding with the IC chip 3.

【００３７】次に、図３（ａ）に示すように、キャピラ
リ７の貫通孔７ａにＡｕワイヤ５を挿通した状態で、ト
ーチ電極８からの放電によりキャピラリ７から突出した
Ａｕワイヤ５の先端にボール５ａを形成する。Next, as shown in FIG. 3A, in a state where the Au wire 5 is inserted into the through hole 7a of the capillary 7, the tip of the Au wire 5 protruding from the capillary 7 by the discharge from the torch electrode 8 is formed. The ball 5a is formed.

【００３８】次に、図３（ｂ）に示すように、ＩＣチッ
プ３に形成されたパッド３ａ上にボールボンディング
（１次ボンディング）を行うとともに、図３（ｃ）に示
すように、上記工程で形成したランド４上のバンプ６に
ウェッジボンディング（２次ボンディング）を行う。こ
れにより、ＩＣチップ３のパッド３ａとランド４上のバ
ンプ６との間にＡｕよりなる上記導線１０が形成され、
ＩＣチップ３と回路基板１とが電気的に接続される。Next, as shown in FIG. 3 (b), ball bonding (primary bonding) is performed on the pads 3a formed on the IC chip 3, and as shown in FIG. Wedge bonding (secondary bonding) is performed on the bumps 6 on the lands 4 formed by the above steps. Thus, the conductive wire 10 made of Au is formed between the pad 3a of the IC chip 3 and the bump 6 on the land 4.
The IC chip 3 and the circuit board 1 are electrically connected.

【００３９】以上の図３に示す工程を順次繰り返して、
ＩＣチップ３におけるすべてのパッド３ａについてボン
ディングを行う。By repeating the above steps shown in FIG.
Bonding is performed for all the pads 3a in the IC chip 3.

【００４０】以上、本実施形態のようにキャピラリ７の
内側押付部７ｂにおける傾斜角度Ｂを４〜２０°とする
ことにより、ワイヤ５を被接合部材４に十分な強度で押
し付けることができ、ワイヤ５と被接合部材４との間の
接合性を向上させることができる。これにより、被接合
材料４としてＣｕ等のＡｕワイヤとの接合性の悪い材料
を用いた場合であっても、ワイヤ５の切断後、キャピラ
リ７を上方に引き上げる際に、ワイヤ５が被接合部材４
から簡単に引き剥がされてしまうことを防止でき、キャ
ピラリ先端からワイヤを確実に所定量引き出すことがで
きる。従って、ボンディング工程の途中でボンディング
装置が停止することなく生産性を向上させることができ
る。As described above, by setting the inclination angle B of the inner pressing portion 7b of the capillary 7 to 4 to 20 ° as in the present embodiment, the wire 5 can be pressed against the member 4 to be joined with sufficient strength. The joining property between the member 5 and the member 4 to be joined can be improved. Accordingly, even when a material having poor bonding properties with the Au wire such as Cu is used as the material 4 to be joined, when the capillary 7 is pulled up after cutting the wire 5, the wire 5 4
Can be prevented from being easily peeled off from the wire, and a predetermined amount of wire can be reliably pulled out from the tip of the capillary. Therefore, the productivity can be improved without stopping the bonding apparatus during the bonding process.

【００４１】さらに、図５に示す従来構造のキャピラリ
を用いてワイヤボンディングを行った場合には、Ａｕワ
イヤとＣｕ等の被接合材料とを接合する際、これらは接
合性がよくないため強いボンディング条件で接合を行
う、すなわちキャピラリを被接合材料に強く押し付ける
必要がある。このため、キャピラリの寿命が極端に短く
なってしまうという問題があった。しかしながら、本実
施形態のキャピラリを用いれば、強いボンディング条件
で接合を行う必要がないので、キャピラリの寿命を長く
することができ、コスト削減や生産性の向上を図ること
ができる。Further, when wire bonding is performed using a capillary having a conventional structure shown in FIG. 5, when bonding Au wires and materials to be bonded such as Cu, etc., these materials have poor bonding properties, so that strong bonding is required. It is necessary to perform bonding under conditions, that is, to strongly press the capillary against the material to be bonded. For this reason, there is a problem that the life of the capillary becomes extremely short. However, if the capillary of this embodiment is used, it is not necessary to perform bonding under strong bonding conditions, so that the life of the capillary can be lengthened, and cost reduction and improvement in productivity can be achieved.

【００４２】なお、上記実施形態では、ＩＣチップ上の
パッドと回路基板上のランドとをワイヤボンディングに
よって接続する工程において、ランド上にバンプを形成
した後、キャピラリをランドに押し付けてワイヤを切断
する場合について説明したが、これに限らず、ワイヤを
接合性の悪い被接合部材にキャピラリを押し付けてワイ
ヤを切断する場合であれば、本発明のキャピラリを適用
可能である。In the above embodiment, in the step of connecting the pads on the IC chip and the lands on the circuit board by wire bonding, after forming bumps on the lands, the capillary is pressed against the lands to cut the wires. Although the case has been described, the present invention is not limited to this, and the capillary of the present invention can be applied to a case where a capillary is pressed against a member to be bonded having poor bonding properties to cut the wire.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本実施形態を適用したワイヤボンディング用キ
ャピラリの拡大断面図である。FIG. 1 is an enlarged sectional view of a capillary for wire bonding to which the present embodiment is applied.

【図２】図１のキャピラリを用いたＩＣチップと回路基
板とのワイヤボンディング手順を示す工程図である。2 is a process chart showing a wire bonding procedure between an IC chip and a circuit board using the capillary of FIG. 1;

【図３】図２に続くワイヤボンディング工程を示す工程
図である。FIG. 3 is a process diagram showing a wire bonding process following FIG. 2;

【図４】図３に続くワイヤボンディング工程を示す工程
図である。FIG. 4 is a process diagram showing a wire bonding process following FIG. 3;

【図５】従来技術のキャピラリの拡大断面図である。FIG. 5 is an enlarged sectional view of a conventional capillary.

【図６】従来技術のキャピラリによるワイヤ切断工程を
示す工程図である。FIG. 6 is a process diagram showing a wire cutting process using a conventional capillary.

【符号の説明】[Explanation of symbols]

１…回路基板、３…ＩＣチップ、３ａ…パッド、４…ラ
ンド、６…バンプ、７…キャピラリ、７ａ…内側押付
部、７ｂ…外側押付部。DESCRIPTION OF SYMBOLS 1 ... Circuit board, 3 ... IC chip, 3a ... pad, 4 ... Land, 6 ... Bump, 7 ... Capillary, 7a ... Inner pressing part, 7b ... Outer pressing part.

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 ワイヤボンディングに用いられるキャピ
ラリ（７）であって、 キャピラリ先端部の外周側に傾斜状に形成された外側押
付部（７ａ）と、 前記キャピラリ先端部の内周側に４〜２０°の所定傾斜
角度（Ｂ）をもって形成された略円錐形状の内側押付部
（７ｂ）とを備えることを特徴とするワイヤボンディン
グ用キャピラリ。1. A capillary (7) used for wire bonding, comprising: an outer pressing portion (7a) formed to be inclined on an outer peripheral side of a tip end of a capillary; A capillary for wire bonding, comprising: a substantially conical inner pressing portion (7b) formed at a predetermined inclination angle (B) of 20 °. 【請求項２】 第１導体（３ａ）および第２導体（４）
とをキャピラリ（７）を用いてワイヤボンディングによ
って電気的に接続する方法であって、 キャピラリ先端部の外周側に傾斜状に形成された外側押
付部（７ａ）と、前記キャピラリ先端部の内周側に４〜
２０°の所定傾斜角度（Ｂ）をもって形成された略円錐
形状の内側押付部（７ｂ）とを備えるキャピラリ（７）
を用い、 前記キャピラリ（７）の先端に線材（５）によってボー
ル（５ａ）を形成し、前記キャピラリ（７）によって前
記ボール（５ａ）を前記第２導体（４）に圧着させた
後、前記キャピラリ（７）の先端を前記回路基板（１）
における前記バンプ近傍に押し付けて前記線材（５）を
切断し、前記第２導体（４）上にバンプ（６）を形成す
るバンプ形成工程と、 前記バンプ形成工程の後、前記第１導体（３ａ）を１次
側とするとともに前記バンプ（６）を２次側としてワイ
ヤボンディングを行うことにより前記導線（１０）を形
成し、前記第１導体（３ａ）および前記第２導体（４）
とを電気的に接続するボンディング工程とを備えること
を特徴とする電子部品の接続方法。2. A first conductor (3a) and a second conductor (4).
And an electrical connection by wire bonding using a capillary (7), comprising: an outer pressing portion (7a) formed in a slant shape on the outer peripheral side of the tip of the capillary; and an inner periphery of the tip of the capillary. 4 ~ on the side
A capillary (7) including a substantially conical inner pressing portion (7b) formed with a predetermined inclination angle (B) of 20 °.
A ball (5a) is formed by a wire (5) at the tip of the capillary (7), and the ball (5a) is pressed against the second conductor (4) by the capillary (7). Connect the tip of the capillary (7) to the circuit board (1)
Forming a bump (6) on the second conductor (4) by pressing the wire (5) in the vicinity of the bump in (1), and after the bump forming step, the first conductor (3a). ) On the primary side and the bumps (6) on the secondary side to perform wire bonding to form the conducting wire (10), and the first conductor (3a) and the second conductor (4).
And a bonding step of electrically connecting the electronic parts to each other. 【請求項３】 前記バンプ形成工程は、前記線材（５）
と接合性の低い材料から形成される前記第２導体（４）
上に前記バンプ（６）を形成する工程であることを特徴
とする請求項２に記載の電子部品の接続方法。3. The method according to claim 1, wherein the step of forming the bump comprises the step of forming the wire rod.
The second conductor (4) formed of a material having low bonding property with the second conductor (4)
3. The method according to claim 2, further comprising the step of forming the bump (6) thereon.
JP11180454A 1999-06-25 1999-06-25 Capillary for wire bonding, and method of connecting electronic parts Pending JP2001007142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11180454A JP2001007142A (en) 1999-06-25 1999-06-25 Capillary for wire bonding, and method of connecting electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11180454A JP2001007142A (en) 1999-06-25 1999-06-25 Capillary for wire bonding, and method of connecting electronic parts

Publications (1)

Publication Number Publication Date
JP2001007142A true JP2001007142A (en) 2001-01-12

Family

ID=16083518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11180454A Pending JP2001007142A (en) 1999-06-25 1999-06-25 Capillary for wire bonding, and method of connecting electronic parts

Country Status (1)

Country Link
JP (1) JP2001007142A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022820A (en) * 2016-08-05 2018-02-08 アダマンド株式会社 Capillary in wedge bonding, wire bonding method and bonded wire

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022820A (en) * 2016-08-05 2018-02-08 アダマンド株式会社 Capillary in wedge bonding, wire bonding method and bonded wire

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