JP2000510287A - 超小型電子パッケージ - Google Patents

超小型電子パッケージ

Info

Publication number
JP2000510287A
JP2000510287A JP09540868A JP54086897A JP2000510287A JP 2000510287 A JP2000510287 A JP 2000510287A JP 09540868 A JP09540868 A JP 09540868A JP 54086897 A JP54086897 A JP 54086897A JP 2000510287 A JP2000510287 A JP 2000510287A
Authority
JP
Japan
Prior art keywords
radio frequency
base
frequency substrate
conductive
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP09540868A
Other languages
English (en)
Japanese (ja)
Inventor
エス． ウィーン、デボラ
エム． アンダースン、ポール
ダブリュー． リンドナー、アラン
ゲッツ、マーティン
バビアルツ、ヨゼフ
Original Assignee
ストラティジ コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ストラティジ コーポレイション filed Critical ストラティジ コーポレイション
Publication of JP2000510287A publication Critical patent/JP2000510287A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/1616—Cavity shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/1617—Cavity coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/166—Material
    • H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/166—Material
    • H01L2924/16786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/16787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/166—Material
    • H01L2924/16786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/16788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/166—Material
    • H01L2924/1679—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Casings For Electric Apparatus (AREA)
JP09540868A 1996-05-14 1997-04-11 超小型電子パッケージ Pending JP2000510287A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/645,729 US5753972A (en) 1993-10-08 1996-05-14 Microelectronics package
US08/645,729 1996-05-14
PCT/US1997/006091 WO1997043787A1 (fr) 1996-05-14 1997-04-11 Boitier micro-electronique

Publications (1)

Publication Number Publication Date
JP2000510287A true JP2000510287A (ja) 2000-08-08

Family

ID=24590231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09540868A Pending JP2000510287A (ja) 1996-05-14 1997-04-11 超小型電子パッケージ

Country Status (6)

Country Link
US (1) US5753972A (fr)
EP (1) EP0902975A1 (fr)
JP (1) JP2000510287A (fr)
AU (1) AU2665597A (fr)
TW (1) TW400590B (fr)
WO (1) WO1997043787A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476755B2 (en) 2008-07-28 2013-07-02 Kabushiki Kaisha Toshiba High frequency ceramic package and fabrication method for the same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6172412B1 (en) * 1993-10-08 2001-01-09 Stratedge Corporation High frequency microelectronics package
FR2748156B1 (fr) * 1996-04-26 1998-08-07 Suisse Electronique Microtech Dispositif comprenant deux substrats destines a former un microsysteme ou une partie d'un microsysteme et procede d'assemblage de deux substrats micro-usines
US5879786A (en) * 1996-11-08 1999-03-09 W. L. Gore & Associates, Inc. Constraining ring for use in electronic packaging
DE19735760A1 (de) * 1997-08-18 1999-02-25 Zeiss Carl Fa Lötverfahren für optische Materialien an Metallfassungen und gefaßte Baugruppen
AU1814999A (en) * 1997-12-15 1999-07-19 Stratedge Corporation Ceramic microelectronics package with co-planar waveguide feed-through
JP3820823B2 (ja) * 1999-12-02 2006-09-13 株式会社村田製作所 ケース基板の製造方法及び圧電共振部品
DE10010461A1 (de) * 2000-03-03 2001-09-13 Infineon Technologies Ag Vorrichtung zum Verpacken elektronischer Bauteile mittels Spritzgußtechnik
US20030141589A1 (en) * 2000-10-03 2003-07-31 Hei, Inc. Encapsulated high-frequency electrical circuit
US6639305B2 (en) 2001-02-02 2003-10-28 Stratedge Corporation Single layer surface mount package
US6498551B1 (en) * 2001-08-20 2002-12-24 Xytrans, Inc. Millimeter wave module (MMW) for microwave monolithic integrated circuit (MMIC)
US6664630B2 (en) * 2001-10-16 2003-12-16 Hitachi Maxell, Ltd. Semiconductor device
US6635958B2 (en) * 2001-12-03 2003-10-21 Dover Capital Formation Group Surface mount ceramic package
CN104885216B (zh) 2012-07-13 2017-04-12 天工方案公司 在射频屏蔽应用中的轨道设计
JP7061810B2 (ja) * 2016-12-07 2022-05-02 ウェハー エルエルシー 低損失電送機構及びそれを使用するアンテナ
TWI650053B (zh) * 2017-12-27 2019-02-01 菱生精密工業股份有限公司 基板結構及封裝模組

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202925C (fr) * 1969-04-30 1900-01-01
JPS4810904B1 (fr) * 1969-03-12 1973-04-09
US3872583A (en) * 1972-07-10 1975-03-25 Amdahl Corp LSI chip package and method
US3946428A (en) * 1973-09-19 1976-03-23 Nippon Electric Company, Limited Encapsulation package for a semiconductor element
US4025716A (en) * 1975-01-30 1977-05-24 Burroughs Corporation Dual in-line package with window frame
US3958195A (en) * 1975-03-21 1976-05-18 Varian Associates R.f. transistor package having an isolated common lead
US4354107A (en) * 1977-11-28 1982-10-12 Irvine Sensors Corporation Detector array module-structure and fabrication
US4304624A (en) * 1977-11-28 1981-12-08 Irvine Sensors Corporation Method of fabricating a multi-layer structure for detector array module
US4646128A (en) * 1980-09-16 1987-02-24 Irvine Sensors Corporation High-density electronic processing package--structure and fabrication
JPS58190046A (ja) * 1982-04-30 1983-11-05 Fujitsu Ltd 半導体装置
US4513355A (en) * 1983-06-15 1985-04-23 Motorola, Inc. Metallization and bonding means and method for VLSI packages
US4953001A (en) * 1985-09-27 1990-08-28 Raytheon Company Semiconductor device package and packaging method
US4706166A (en) * 1986-04-25 1987-11-10 Irvine Sensors Corporation High-density electronic modules--process and product
CA1320006C (fr) * 1986-06-02 1993-07-06 Norio Hidaka Boitier de circuit integre
US4764846A (en) * 1987-01-05 1988-08-16 Irvine Sensors Corporation High density electronic package comprising stacked sub-modules
JPH088321B2 (ja) * 1987-01-19 1996-01-29 住友電気工業株式会社 集積回路パツケ−ジ
US4912545A (en) * 1987-09-16 1990-03-27 Irvine Sensors Corporation Bonding of aligned conductive bumps on adjacent surfaces
US4901041A (en) * 1988-09-30 1990-02-13 Grumman Corporation High-performance package for monolithic microwave integrated circuits
US5045685A (en) * 1989-03-27 1991-09-03 Irvine Sensors Corporation Analog to digital conversion on multiple channel IC chips
US5104820A (en) * 1989-07-07 1992-04-14 Irvine Sensors Corporation Method of fabricating electronic circuitry unit containing stacked IC layers having lead rerouting
US5014418A (en) * 1989-07-13 1991-05-14 Gte Products Corporation Method of forming a two piece chip carrier
US4991283A (en) * 1989-11-27 1991-02-12 Johnson Gary W Sensor elements in multilayer ceramic tape structures
US5159750A (en) * 1989-12-20 1992-11-03 National Semiconductor Corporation Method of connecting an IC component with another electrical component
KR920002589B1 (ko) * 1990-03-30 1992-03-30 삼성코닝 주식회사 금속 인쇄된 세라믹 팩키지의 제조방법
US5117068A (en) * 1990-08-17 1992-05-26 Watkins-Johnson Company Surface mount package for R.F. devices
US5438305A (en) * 1991-08-12 1995-08-01 Hitachi, Ltd. High frequency module including a flexible substrate
US5465008A (en) * 1993-10-08 1995-11-07 Stratedge Corporation Ceramic microelectronics package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476755B2 (en) 2008-07-28 2013-07-02 Kabushiki Kaisha Toshiba High frequency ceramic package and fabrication method for the same

Also Published As

Publication number Publication date
EP0902975A1 (fr) 1999-03-24
AU2665597A (en) 1997-12-05
US5753972A (en) 1998-05-19
WO1997043787A1 (fr) 1997-11-20
TW400590B (en) 2000-08-01

Similar Documents

Publication Publication Date Title
EP0902976B1 (fr) Boitier micro-electronique haute frequence
US5465008A (en) Ceramic microelectronics package
US6271579B1 (en) High-frequency passband microelectronics package
US5406446A (en) Thin film capacitor
JP2000510287A (ja) 超小型電子パッケージ
US5652693A (en) Substrate with thin film capacitor and insulating plug
US6172412B1 (en) High frequency microelectronics package
KR20040031680A (ko) 전자 장치 및 그 제조 방법
EP0362161B1 (fr) Procédé de fabrication d'un substrat de circuit intégré à micro-ondes
JP2532230B2 (ja) 高周波用回路素子密封パッケ―ジとその製造方法
JP2003101181A (ja) 回路基板及びその製造方法ならびに電子装置
CA1256589A (fr) Boitier hermetique pour circuits microelectroniques haute frequence montes en surface
US20020125041A1 (en) Package base for mounting electronic element, electronic device and method of producing the same
US4922323A (en) Hermetically sealed multilayer electrical feedthru
JP2970723B2 (ja) 半導体パッケージおよびその製造方法
WO1999034443A1 (fr) Boitier ceramique pour microcomposants electroniques pourvu d'un passage de guide d'ondes co-planaire
Calif Wein et a1.
Going et al. Wein et al.
CN1244970A (zh) 集成电子结构
JP2004134413A (ja) 半導体素子収納用パッケージおよび半導体装置
JPH1174397A (ja) 高周波素子収納用パッケージ
JP2000049427A (ja) 接合体及びそれを用いた回路基板
JP2632151B2 (ja) 回路ブロツクの製造方法
JP2002076722A (ja) 配線基板
JPH01157560A (ja) 基板空洞内に配設した能動装置を持った半導体モジュール