JP2000508424A - Gmrブリッジセンサの製造方法並びにgmrブリッジセンサ - Google Patents
Gmrブリッジセンサの製造方法並びにgmrブリッジセンサInfo
- Publication number
- JP2000508424A JP2000508424A JP9536626A JP53662697A JP2000508424A JP 2000508424 A JP2000508424 A JP 2000508424A JP 9536626 A JP9536626 A JP 9536626A JP 53662697 A JP53662697 A JP 53662697A JP 2000508424 A JP2000508424 A JP 2000508424A
- Authority
- JP
- Japan
- Prior art keywords
- bridge
- resistor
- gmr
- malleability
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49034—Treating to affect magnetic properties
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. GMRブリッジセンサの製造方法であって、磁場の検出のために、磁気抵 抗性抵抗(1−4)がブリッジの形に接続されており、該ブリッジは、GMR効 果(Giant Magnetoresistive Ratio Effek t)を有している方法において、 個別の抵抗(1−4)の磁気抵抗感度を、可鍛化によって生じ、前記抵抗の可 鍛化を、該可鍛化に必要な温度の達成に十分な電流の選択された給電によって、 ブリッジ端子(5−8)において行い、それにより、前記磁気抵抗性抵抗(1− 4)に、GMR効果に必要な特性が与えられるようにしたことを特徴とするGM Rブリッジセンサの製造方法。 2. 各抵抗(1;2;3;4)は、それぞれ、可鍛化にとって十分な電圧を、 前記抵抗の直ぐ隣りのブリッジ端子(5,7;5,8;6,7;6,8)に印加 することによって、可鍛化のために十分な温度に加熱し、その後、冷却する請求 の範囲1記載の方法。 3. 種々のブリッジ分岐内にあるそれぞれ2つの抵抗(2,3;1,4)を、直 ぐ隣りの、それぞれ2つの、同じ電位が印加されたブリッジ端子を介して電流給 電が行なう請求の範囲1記載の方法。 4. それぞれの抵抗が可鍛化の前にそれぞれ同一抵抗値を有する請求の範囲1, 2又は3記載の方法。 5. 適切な電流の給電を一回行う請求の範囲1〜4の何れか1記載の方法。 6. 抵抗用の材料として、所定クラスの不連続的な多層材料、例えば、NiFe /Agを使用し、該材料で、GMR特性を所定温度での可鍛化によって形成する ことができる請求の範囲1〜5の何れか1記載の方法。 7. 磁場の測定のために、抵抗(1−4)がブリッジの形で一緒に接続されてお り、前記抵抗は、GMR効果(Giant Magnetoresistive Ratio Effekt)を有している磁気抵抗性ブリッジセンサにおいて 、 それぞれの抵抗(1−4)の磁気抵抗性の感度は、可鍛化によって形成されて おり、前記可鍛化は、ブリッジ端子(5−8)での制御された電流給電を用いて 、前記可鍛化のために必要な温度に加熱することによって行うことを特徴とする 磁気抵抗性ブリッジセンサ。 8. 抵抗(1−4)用の材料として、一回可鍛処理した後、以前とは別のGMR 効果を有するようなもの、例えば、NiFe/Agの材料組み合わせを多層構成 した材料が用いられる請求の範囲7記載の磁気抵抗性ブリッジセンサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19614460A DE19614460A1 (de) | 1996-04-12 | 1996-04-12 | Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor |
DE19614460.4 | 1996-04-12 | ||
PCT/DE1997/000110 WO1997039364A1 (de) | 1996-04-12 | 1997-01-23 | Verfahren zur herstellung eines gmr-brückensensors sowie gmr-brückensensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000508424A true JP2000508424A (ja) | 2000-07-04 |
JP4053088B2 JP4053088B2 (ja) | 2008-02-27 |
Family
ID=7791074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53662697A Expired - Fee Related JP4053088B2 (ja) | 1996-04-12 | 1997-01-23 | Gmrブリッジセンサの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6339329B1 (ja) |
EP (1) | EP0892928B1 (ja) |
JP (1) | JP4053088B2 (ja) |
KR (1) | KR100445817B1 (ja) |
DE (2) | DE19614460A1 (ja) |
TW (1) | TW379449B (ja) |
WO (1) | WO1997039364A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007192803A (ja) * | 2005-12-19 | 2007-08-02 | Ishikawajima Harima Heavy Ind Co Ltd | 腐食評価装置及び腐食評価方法 |
JP2009074908A (ja) * | 2007-09-20 | 2009-04-09 | Alps Electric Co Ltd | 原点検出装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2773395B1 (fr) * | 1998-01-05 | 2000-01-28 | Commissariat Energie Atomique | Capteur angulaire lineaire a magnetoresistances |
AU6268599A (en) * | 1998-09-28 | 2000-04-17 | Seagate Technology Llc | Quad-layer gmr sandwich |
DE19948026B4 (de) * | 1999-10-06 | 2009-06-10 | Robert Bosch Gmbh | Schaltung und Verfahren zur Feststellung eines magnetischen Feldes |
TW550394B (en) * | 2000-10-26 | 2003-09-01 | Res Inst For Electric And Magn | Thin-film magnetic field sensor |
US7662650B2 (en) | 2001-08-13 | 2010-02-16 | Finisar Corporation | Providing photonic control over wafer borne semiconductor devices |
US7127542B2 (en) * | 2002-11-02 | 2006-10-24 | Dell Products L.P. | Hot-plugging nodes in a modular system having redundant power supplies |
CN100372141C (zh) * | 2003-12-18 | 2008-02-27 | 安泰科技股份有限公司 | 巨磁阻抗材料的复合式焦耳处理方法 |
DE102012012384A1 (de) * | 2012-06-21 | 2013-12-24 | Wabco Gmbh | Sensorvorrichtung zur Drehzahlmessung an einem Rad eines Fahrzeugs, Bremsanlage und Fahrzeug damit sowie damit durchführbares Messverfahren zur Drehzahlmessung und Bremsverfahren |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61133678A (ja) * | 1984-12-03 | 1986-06-20 | Hitachi Ltd | 磁気抵抗効果型素子 |
WO1993011569A1 (en) * | 1991-12-03 | 1993-06-10 | Nippondenso Co., Ltd. | Magnetoresistant element and manufacturing process thereof |
TW265440B (ja) * | 1993-04-30 | 1995-12-11 | Ibm | |
JPH07254510A (ja) * | 1993-08-31 | 1995-10-03 | Yamaha Corp | 磁気抵抗材料 |
DE4425356C2 (de) * | 1993-09-29 | 1998-07-02 | Siemens Ag | Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur |
DE19520206C2 (de) * | 1995-06-01 | 1997-03-27 | Siemens Ag | Magnetfeldsensor mit einer Brückenschaltung von magnetoresistiven Brückenelementen |
JPH10241124A (ja) * | 1997-02-28 | 1998-09-11 | Tdk Corp | スピンバルブ磁気抵抗素子の磁気特性制御方法及び該素子を備えた磁気ヘッドの磁気特性制御方法 |
-
1996
- 1996-04-12 DE DE19614460A patent/DE19614460A1/de not_active Ceased
-
1997
- 1997-01-23 WO PCT/DE1997/000110 patent/WO1997039364A1/de active IP Right Grant
- 1997-01-23 DE DE59704968T patent/DE59704968D1/de not_active Expired - Lifetime
- 1997-01-23 US US09/171,074 patent/US6339329B1/en not_active Expired - Fee Related
- 1997-01-23 KR KR10-1998-0707676A patent/KR100445817B1/ko not_active IP Right Cessation
- 1997-01-23 EP EP97907011A patent/EP0892928B1/de not_active Expired - Lifetime
- 1997-01-23 JP JP53662697A patent/JP4053088B2/ja not_active Expired - Fee Related
- 1997-01-25 TW TW086100821A patent/TW379449B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007192803A (ja) * | 2005-12-19 | 2007-08-02 | Ishikawajima Harima Heavy Ind Co Ltd | 腐食評価装置及び腐食評価方法 |
JP2009074908A (ja) * | 2007-09-20 | 2009-04-09 | Alps Electric Co Ltd | 原点検出装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100445817B1 (ko) | 2004-11-03 |
JP4053088B2 (ja) | 2008-02-27 |
US6339329B1 (en) | 2002-01-15 |
EP0892928A1 (de) | 1999-01-27 |
DE19614460A1 (de) | 1997-10-16 |
TW379449B (en) | 2000-01-11 |
KR20000005049A (ko) | 2000-01-25 |
EP0892928B1 (de) | 2001-10-17 |
WO1997039364A1 (de) | 1997-10-23 |
DE59704968D1 (de) | 2001-11-22 |
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