JP2000502498A - 薄被覆層領域における深度プロファイルの確定方法 - Google Patents
薄被覆層領域における深度プロファイルの確定方法Info
- Publication number
- JP2000502498A JP2000502498A JP10518012A JP51801298A JP2000502498A JP 2000502498 A JP2000502498 A JP 2000502498A JP 10518012 A JP10518012 A JP 10518012A JP 51801298 A JP51801298 A JP 51801298A JP 2000502498 A JP2000502498 A JP 2000502498A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- ion
- ions
- energy
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.固形基材の薄被覆層領域における深度プロファイルの確定方法において: − 気相にあるか、蒸気層に移行する母材からイオンビームを発生すること; − 基材表面にイオンビームを向けること、 − イオンビームスパッタープロセスにより表面層の特定量を分離すること、 − 測定及び分析回路が後段に接続されたイオンビームから独立した測定プロー ブを使用して、スパッターされて、基材表面から分離した成分の濃度を確定する ことの諸ステップを有し、 イオンビームが、32より大きい分子重量を有し且つ少なくとも3原子から成 るイオンの相当割合を含み、イオンが基材表面に衝突する場合、少なくとも2つ の成分に分解し、そこにおいて、単一原子ないし分子部分の衝突エネルギーが表 面層の特定量を分離するため十分であり、固形物との激突粒子の相互作用が層を 形成しないことを特徴とする方法。 2.単一原子ないし分子部分が、100eVと3000eV間にあるエネルギー を有することを特徴とする、請求項1による方法。 3.イオン電流が、基材表面に衝突する場合単一原子に分解するSF5 +イオンを 相当割合に含むことを特徴とする、請求項1又は2による方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19641981A DE19641981C2 (de) | 1996-10-11 | 1996-10-11 | Verfahren zur Bestimmung von Tiefenprofilen im Dünnschichtbereich |
DE19641981.6 | 1996-10-11 | ||
PCT/EP1997/005632 WO1998016948A1 (de) | 1996-10-11 | 1997-10-13 | Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000502498A true JP2000502498A (ja) | 2000-02-29 |
JP4077881B2 JP4077881B2 (ja) | 2008-04-23 |
Family
ID=7808487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51801298A Expired - Fee Related JP4077881B2 (ja) | 1996-10-11 | 1997-10-13 | 薄被覆層領域における深度プロファイルの確定方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6107629A (ja) |
EP (1) | EP0873574B1 (ja) |
JP (1) | JP4077881B2 (ja) |
AT (1) | ATE215735T1 (ja) |
DE (2) | DE19641981C2 (ja) |
WO (1) | WO1998016948A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5920068A (en) * | 1998-03-05 | 1999-07-06 | Micron Technology, Inc. | Analysis of semiconductor surfaces by secondary ion mass spectrometry |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US6917419B2 (en) | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US6782337B2 (en) | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
US6673637B2 (en) | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7365321B2 (en) * | 2004-03-22 | 2008-04-29 | Kla-Tencor Technologies Corp. | Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis |
DE102005027937B3 (de) * | 2005-06-16 | 2006-12-07 | Ion-Tof Gmbh | Verfahren zur Analyse einer Festkörperprobe |
JP5885474B2 (ja) * | 2011-11-17 | 2016-03-15 | キヤノン株式会社 | 質量分布分析方法及び質量分布分析装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE758925A (fr) * | 1969-11-14 | 1971-04-16 | Bayer Ag | Procede pour l'analyse des surfaces de corps solides par spectrometrie de masse |
DE3125335A1 (de) * | 1981-06-27 | 1983-01-13 | Alfred Prof. Dr. 4400 Münster Benninghoven | Verfahren zur analyse von gasen und fluessigkeiten |
US4368099A (en) * | 1982-02-05 | 1983-01-11 | Rca Corporation | Development of germanium selenide photoresist |
CA1212783A (en) * | 1983-10-28 | 1986-10-14 | George M. Bancroft | Suppression of molecular ions in secondary ion mass spectra |
US4559096A (en) * | 1984-06-25 | 1985-12-17 | The United States Of America As Represented By The United States Department Of Energy | Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith |
US4874946A (en) * | 1985-04-30 | 1989-10-17 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for analyzing the internal chemistry and compositional variations of materials and devices |
GB2269934B (en) * | 1992-08-19 | 1996-03-27 | Toshiba Cambridge Res Center | Spectrometer |
US5442174A (en) * | 1992-10-23 | 1995-08-15 | Fujitsu Limited | Measurement of trace element concentration distribution, and evaluation of carriers, in semiconductors, and preparation of standard samples |
US5689112A (en) * | 1996-04-12 | 1997-11-18 | Enge; Harald A. | Apparatus for detection of surface contaminations on silicon wafers |
-
1996
- 1996-10-11 DE DE19641981A patent/DE19641981C2/de not_active Expired - Fee Related
-
1997
- 1997-10-13 EP EP97912175A patent/EP0873574B1/de not_active Expired - Lifetime
- 1997-10-13 US US09/077,508 patent/US6107629A/en not_active Expired - Lifetime
- 1997-10-13 JP JP51801298A patent/JP4077881B2/ja not_active Expired - Fee Related
- 1997-10-13 WO PCT/EP1997/005632 patent/WO1998016948A1/de active IP Right Grant
- 1997-10-13 AT AT97912175T patent/ATE215735T1/de not_active IP Right Cessation
- 1997-10-13 DE DE59706862T patent/DE59706862D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE59706862D1 (de) | 2002-05-08 |
EP0873574A1 (de) | 1998-10-28 |
WO1998016948A1 (de) | 1998-04-23 |
DE19641981C2 (de) | 2000-12-07 |
EP0873574B1 (de) | 2002-04-03 |
ATE215735T1 (de) | 2002-04-15 |
US6107629A (en) | 2000-08-22 |
DE19641981A1 (de) | 1998-04-16 |
JP4077881B2 (ja) | 2008-04-23 |
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