JP2000353811A5 - - Google Patents

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Publication number
JP2000353811A5
JP2000353811A5 JP2000100257A JP2000100257A JP2000353811A5 JP 2000353811 A5 JP2000353811 A5 JP 2000353811A5 JP 2000100257 A JP2000100257 A JP 2000100257A JP 2000100257 A JP2000100257 A JP 2000100257A JP 2000353811 A5 JP2000353811 A5 JP 2000353811A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000100257A
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Japanese (ja)
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JP2000353811A (en
JP4588833B2 (en
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Publication date
Application filed filed Critical
Priority to JP2000100257A priority Critical patent/JP4588833B2/en
Priority claimed from JP2000100257A external-priority patent/JP4588833B2/en
Publication of JP2000353811A publication Critical patent/JP2000353811A/en
Publication of JP2000353811A5 publication Critical patent/JP2000353811A5/ja
Application granted granted Critical
Publication of JP4588833B2 publication Critical patent/JP4588833B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000100257A 1999-04-07 2000-04-03 Electro-optical device and electronic apparatus Expired - Fee Related JP4588833B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000100257A JP4588833B2 (en) 1999-04-07 2000-04-03 Electro-optical device and electronic apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-99683 1999-04-07
JP9968399 1999-04-07
JP2000100257A JP4588833B2 (en) 1999-04-07 2000-04-03 Electro-optical device and electronic apparatus

Publications (3)

Publication Number Publication Date
JP2000353811A JP2000353811A (en) 2000-12-19
JP2000353811A5 true JP2000353811A5 (en) 2007-06-07
JP4588833B2 JP4588833B2 (en) 2010-12-01

Family

ID=26440795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000100257A Expired - Fee Related JP4588833B2 (en) 1999-04-07 2000-04-03 Electro-optical device and electronic apparatus

Country Status (1)

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JP (1) JP4588833B2 (en)

Families Citing this family (37)

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US6909111B2 (en) * 2000-12-28 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device and thin film forming apparatus
US6717181B2 (en) 2001-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having thin film transistor
JP2002329720A (en) * 2001-04-27 2002-11-15 Samco International Inc Protective film for device and its manufacturing method
JP4831885B2 (en) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4090786B2 (en) * 2001-05-22 2008-05-28 株式会社半導体エネルギー研究所 Light emitting device
JP2003108072A (en) * 2001-09-28 2003-04-11 Semiconductor Energy Lab Co Ltd Display device and its driving method
JP4052865B2 (en) * 2001-09-28 2008-02-27 三洋電機株式会社 Semiconductor device and display device
JP3643067B2 (en) * 2001-10-11 2005-04-27 株式会社半導体エネルギー研究所 Method for designing semiconductor display device
JP4485119B2 (en) * 2001-11-13 2010-06-16 株式会社半導体エネルギー研究所 Display device
KR100940342B1 (en) * 2001-11-13 2010-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method for driving the same
KR100831227B1 (en) 2001-12-17 2008-05-21 삼성전자주식회사 A method for manufacturing a thin film transistor using poly silicon
JP3923341B2 (en) 2002-03-06 2007-05-30 株式会社半導体エネルギー研究所 Semiconductor integrated circuit and driving method thereof
KR100474001B1 (en) * 2002-08-14 2005-03-10 엘지.필립스 엘시디 주식회사 Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same
JP4378767B2 (en) * 2002-09-26 2009-12-09 セイコーエプソン株式会社 LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
KR100544436B1 (en) * 2002-11-26 2006-01-23 엘지.필립스 엘시디 주식회사 The organic electro-luminescence device and method for fabricating of the same
KR100503129B1 (en) * 2002-12-28 2005-07-22 엘지.필립스 엘시디 주식회사 Dual Panel Type Electroluminescent Device and Method for Fabricating the same
KR100500147B1 (en) * 2002-12-31 2005-07-07 엘지.필립스 엘시디 주식회사 The organic electro-luminescence device and method for fabricating of the same
JP3991883B2 (en) 2003-02-20 2007-10-17 日本電気株式会社 Method for manufacturing thin film transistor substrate
JP4741177B2 (en) 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 Method for manufacturing display device
JP4444035B2 (en) * 2004-04-21 2010-03-31 シャープ株式会社 Active matrix substrate for display device and manufacturing method thereof
CN100459157C (en) * 2004-08-26 2009-02-04 友达光电股份有限公司 Thin film transistor structure for plane display device and its producing method
JP4063266B2 (en) 2004-09-30 2008-03-19 セイコーエプソン株式会社 Thin film semiconductor device manufacturing method, thin film semiconductor device, electro-optical device, and electronic apparatus
US7652291B2 (en) 2005-05-28 2010-01-26 Samsung Mobile Display Co., Ltd. Flat panel display
DE102006060734B4 (en) * 2006-06-30 2014-03-06 Lg Display Co., Ltd. Liquid crystal display and method for its production
JP2008122504A (en) * 2006-11-09 2008-05-29 Mitsubishi Electric Corp Display apparatus and its manufacturing method
TWI367565B (en) * 2008-02-05 2012-07-01 Chimei Innolux Corp Double-layered active area structure with a polysilicon layer and a microcrystalline silicon layer, method for manufactruing the same and its application
JP2010224326A (en) * 2009-03-25 2010-10-07 Kddi Corp Portable device
JP5604270B2 (en) * 2010-11-26 2014-10-08 株式会社半導体エネルギー研究所 Semiconductor device
JP5639988B2 (en) * 2011-11-15 2014-12-10 株式会社半導体エネルギー研究所 Light emitting device
JP6077280B2 (en) * 2011-11-29 2017-02-08 株式会社半導体エネルギー研究所 Display device and electronic device
US9472605B2 (en) * 2014-11-17 2016-10-18 Apple Inc. Organic light-emitting diode display with enhanced aperture ratio
JP6068767B2 (en) * 2016-02-03 2017-01-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6154976B1 (en) * 2017-03-10 2017-06-28 株式会社半導体エネルギー研究所 Semiconductor device
KR102600041B1 (en) * 2018-06-07 2023-11-08 삼성디스플레이 주식회사 Organic light emitting diode display device
JP2019075572A (en) * 2018-12-18 2019-05-16 株式会社半導体エネルギー研究所 Semiconductor device
JP2020096192A (en) * 2020-02-19 2020-06-18 株式会社半導体エネルギー研究所 Display device
TW202232797A (en) * 2021-02-05 2022-08-16 日商半導體能源研究所股份有限公司 semiconductor device

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JP2618534B2 (en) * 1990-12-20 1997-06-11 シャープ株式会社 Method for manufacturing active matrix display device
JP3043870B2 (en) * 1991-11-21 2000-05-22 株式会社東芝 Liquid crystal display
JPH06138481A (en) * 1992-10-23 1994-05-20 Sharp Corp Active matrix substrate and its production
JPH06175154A (en) * 1992-12-03 1994-06-24 Seiko Epson Corp Production of liquid crystal display device
JPH07326767A (en) * 1994-05-31 1995-12-12 Sony Corp Thin film transistor and liquid crystal display using that
JP3326015B2 (en) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 Thin film semiconductor device

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