JP2000299514A - Electronic component and manufacture thereof - Google Patents
Electronic component and manufacture thereofInfo
- Publication number
- JP2000299514A JP2000299514A JP10833099A JP10833099A JP2000299514A JP 2000299514 A JP2000299514 A JP 2000299514A JP 10833099 A JP10833099 A JP 10833099A JP 10833099 A JP10833099 A JP 10833099A JP 2000299514 A JP2000299514 A JP 2000299514A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- base film
- titanium
- electronic component
- Prior art date
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Links
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Ceramic Capacitors (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品、特に、
セラミックス表面に電極膜を設けた電子部品及びその製
造方法に関する。TECHNICAL FIELD The present invention relates to an electronic component, in particular,
The present invention relates to an electronic component having an electrode film provided on a ceramic surface and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】電子部品において、一般に、セラミック
ス表面に電極膜を設ける場合、電極膜の材料としてＡｇ
やＣｕ等の貴金属が用いられる。このとき、電極膜とセ
ラミックスとの密着強度の向上及び電極膜の耐半田喰れ
性の向上等を目的として、通常、セラミックス表面と電
極膜との間に電極下地膜を配設する。従来、この電極下
地膜の材料としては、例えば、ニッケルを主成分とする
卑金属粉末に、硼化物粉末や炭化物粉末等を含有させた
電極ペースト、あるいは、ニッケル−クロム系合金やニ
ッケル−銅系合金が用いられていた。2. Description of the Related Art In an electronic component, when an electrode film is generally provided on a ceramic surface, Ag is generally used as a material of the electrode film.
And a noble metal such as Cu. At this time, usually, an electrode base film is provided between the ceramic surface and the electrode film for the purpose of improving the adhesion strength between the electrode film and the ceramic and improving the resistance to solder erosion of the electrode film. Conventionally, as a material of the electrode base film, for example, an electrode paste obtained by adding a boride powder or a carbide powder to a base metal powder containing nickel as a main component, or a nickel-chromium alloy or a nickel-copper alloy Was used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
電極下地膜の材料のうち、ニッケルを主成分とする卑金
属粉末に硼化物粉末や炭化物粉末等を含有させた電極ペ
ーストは、塗布法で成膜するため、電極下地膜の膜厚精
度が低いという問題があった。また、ニッケル−クロム
系合金等はエッチング性が劣り、特に環境問題の観点か
らもクロムは使用しない方が好ましい。However, among the conventional electrode underlayer materials, an electrode paste comprising a base metal powder containing nickel as a main component and a boride powder or a carbide powder is formed by a coating method. Therefore, there is a problem that the film thickness accuracy of the electrode base film is low. Nickel-chromium alloys and the like have poor etching properties, and it is preferable not to use chromium from the viewpoint of environmental issues.
【０００４】そこで、本発明の目的は、セラミックスと
の密着強度等に優れ、かつ、膜厚精度が高い電極下地膜
を有する電子部品及びその製造方法を提供することにあ
る。An object of the present invention is to provide an electronic component having an electrode base film having excellent adhesion strength to ceramics and the like and high film thickness accuracy, and a method of manufacturing the same.
【０００５】[0005]
【課題を解決するための手段と作用】以上の目的を達成
するため、本発明に係る電子部品は、セラミックス表面
に、チタンを７．５〜８．０重量％含有したニッケル−
チタン系合金からなる電極下地膜を介して電極膜を設け
ている。そして、信頼性の観点から、電極下地膜の膜厚
は、０．１〜０．３μｍであることが好ましい。以上の
構成において、ニッケル−チタン系合金は、セラミック
スとの密着強度が強く、耐半田喰れ性にも優れている。In order to achieve the above object, an electronic component according to the present invention comprises a nickel-containing ceramic containing 7.5 to 8.0% by weight of titanium on a ceramic surface.
An electrode film is provided via an electrode base film made of a titanium-based alloy. Then, from the viewpoint of reliability, the thickness of the electrode base film is preferably 0.1 to 0.3 μm. In the above configuration, the nickel-titanium alloy has a high adhesion strength to ceramics and is excellent in resistance to solder erosion.
【０００６】また、本発明に係る電子部品の製造方法
は、セラミックス表面に、チタンを７．５〜８．０重量
％含有したニッケル−チタン系合金からなる電極下地膜
をスパッタリング法で形成する。以上の方法により、膜
厚精度が高い電極下地膜が形成される。In the method of manufacturing an electronic component according to the present invention, an electrode base film made of a nickel-titanium-based alloy containing 7.5 to 8.0% by weight of titanium is formed on a ceramic surface by a sputtering method. By the above method, an electrode base film having high film thickness accuracy is formed.
【０００７】[0007]
【発明の実施の形態】以下、本発明に係る電子部品及び
その製造方法の一実施形態について添付図面を参照して
説明する。本実施形態では、圧電部品を例にして説明す
るが、コンデンサやインダクタ等のように、セラミック
ス表面に電極膜を設ける電子部品であれば種類は問わな
い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of an electronic component and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings. In the present embodiment, a piezoelectric component will be described as an example. However, any type of electronic component such as a capacitor or an inductor provided with an electrode film on a ceramic surface can be used.
【０００８】［圧電部品の構成］図１に示すように、圧
電部品１８は、振動電極膜２ａ，２ｂを表裏面に設けた
圧電セラミックス基板１と、２枚の外装セラミックス基
板１２，１３とで構成されている。圧電セラミックス基
板１にはＰＺＴ等のセラミックス基板が使用され、外装
セラミックス基板１２，１３には、アルミナ等のセラミ
ックス基板が使用される。振動電極膜２ａ，２ｂは厚み
すべり振動モードを利用して振動する。[Structure of Piezoelectric Component] As shown in FIG. 1, a piezoelectric component 18 is composed of a piezoelectric ceramic substrate 1 provided with vibrating electrode films 2a and 2b on the front and back surfaces, and two exterior ceramic substrates 12 and 13. It is configured. A ceramic substrate such as PZT is used for the piezoelectric ceramic substrate 1, and ceramic substrates such as alumina are used for the exterior ceramic substrates 12 and 13. The vibrating electrode films 2a and 2b vibrate using the thickness shear vibration mode.
【０００９】圧電セラミックス基板１は外装セラミック
ス基板１２，１３にて挟まれ、接着剤を利用して積層体
とされる。振動電極膜２ａ，２ｂが振動するための空間
は、接着剤の厚みを利用して確保される。The piezoelectric ceramic substrate 1 is sandwiched between exterior ceramic substrates 12 and 13, and is formed into a laminate using an adhesive. A space for vibrating the vibrating electrode films 2a and 2b is secured by utilizing the thickness of the adhesive.
【００１０】図２に示すように、この積層体の左右にそ
れぞれ、外部電極膜１４，１５が形成される。外部電極
膜１４には振動電極膜２ｂの引出し部３ｂが電気的に接
続され、外部電極膜１５には振動電極膜２ａの引出し部
３ａが電気的に接続される。こうして、圧電部品１８が
得られる。As shown in FIG. 2, external electrode films 14 and 15 are formed on the left and right sides of the laminate, respectively. The lead portion 3b of the vibration electrode film 2b is electrically connected to the external electrode film 14, and the lead portion 3a of the vibration electrode film 2a is electrically connected to the external electrode film 15. Thus, the piezoelectric component 18 is obtained.
【００１１】［電極膜の形成］以上の構成からなる圧電
部品１８において、振動電極膜２ａ，２ｂ及び外部電極
膜１４，１５の形成について以下に詳説する。なお、以
下の説明では、振動電極膜２ａを圧電セラミックス基板
１の表面に形成する場合を例にして説明するが、他の電
極膜２ｂ，１４，１５についても同様である。[Formation of Electrode Film] The formation of the vibrating electrode films 2a and 2b and the external electrode films 14 and 15 in the piezoelectric component 18 having the above configuration will be described in detail below. In the following description, the case where the vibrating electrode film 2a is formed on the surface of the piezoelectric ceramic substrate 1 will be described as an example, but the same applies to the other electrode films 2b, 14, and 15.
【００１２】図３に示すように、振動電極膜２ａは、圧
電セラミックス基板１の表面に、ニッケル−チタン系合
金からなる電極下地膜２１を介して形成される。チタン
は優れた親和性と活性化エネルギー特性を有しており、
セラミックスに含有する酸素と強い化学結合をする。ま
た、耐半田喰れ性にも優れている。電極下地膜２１及び
振動電極膜２ａは、膜厚精度が高い成膜工法として知ら
れる、スパッタリング法によって形成される。両者の膜
形成工程は、真空状態を維持したまま、連続した工程と
される。電極下地膜２１のニッケル−チタン系合金表面
を大気に晒すと、表面が酸化して振動電極膜２ａとの密
着強度が不安定になるおそれがあるからである。As shown in FIG. 3, the vibrating electrode film 2a is formed on the surface of the piezoelectric ceramic substrate 1 via an electrode base film 21 made of a nickel-titanium alloy. Titanium has excellent affinity and activation energy properties,
It forms a strong chemical bond with oxygen contained in ceramics. Also, it has excellent resistance to solder erosion. The electrode base film 21 and the vibrating electrode film 2a are formed by a sputtering method which is known as a film forming method with high film thickness accuracy. Both film forming processes are continuous processes while maintaining a vacuum state. If the nickel-titanium alloy surface of the electrode base film 21 is exposed to the atmosphere, the surface may be oxidized and the adhesion strength to the vibrating electrode film 2a may become unstable.
【００１３】ところで、電極下地膜２１の材料であるニ
ッケル−チタン系合金のエッチングスピード、比抵抗及
び飽和磁化のそれぞれについて、チタンの含有量を変化
させて測定した結果を図４、図５及び図６のグラフに示
す。比較のため、ニッケル−クロム系合金の測定結果
（代表値）も併せて記載している。電極下地膜２１の特
性として、エッチングスピードが速く、かつ、比抵抗の
小さいものが好ましいため、図４及び図５から、電極下
地膜２１はチタンを７．５〜８．０重量％含有したニッ
ケル−チタン系合金からなるように設定する。この合金
組成は、電極下地膜２１を強磁性体としないため（図６
参照）、本実施形態の成膜装置として用いた非磁性用の
マグネトロンスパッタリング装置に好適の合金組成であ
る。FIGS. 4, 5 and 5 show the results obtained by measuring the etching speed, specific resistance and saturation magnetization of the nickel-titanium alloy which is the material of the electrode base film 21 while changing the titanium content. 6 is shown in the graph. For comparison, the measurement results (representative values) of the nickel-chromium alloy are also shown. As a characteristic of the electrode base film 21, it is preferable that the electrode base film 21 has a high etching speed and a small specific resistance. -Set to be made of titanium alloy. This alloy composition does not make the electrode base film 21 a ferromagnetic material (FIG. 6).
And the alloy composition suitable for the non-magnetic magnetron sputtering apparatus used as the film forming apparatus of the present embodiment.
【００１４】従って、電極下地膜２１用のスパッタリン
グターゲットとしてチタンを７．５〜８．０重量％含有
したニッケル−チタン系合金材を使用する。スパッタリ
ング法は、ターゲット組成と略同様の組成の膜を容易に
形成することができるからである。その他のスパッタリ
ング条件は、例えば、以下に示すとおりである。 スパッタリングガス ：Ａｒ（１００％） スパッタリングガス圧力：５×１０-3ＴｏｒｒTherefore, a nickel-titanium alloy containing 7.5 to 8.0% by weight of titanium is used as a sputtering target for the electrode underlayer 21. This is because the sputtering method can easily form a film having substantially the same composition as the target composition. Other sputtering conditions are as shown below, for example. Sputtering gas: Ar (100%) Sputtering gas pressure: 5 × 10 −3 Torr
【００１５】なお、スパッタリングの際、圧電セラミッ
クス基板１を加熱すれば、電極下地膜２１と圧電セラミ
ックス基板１との密着強度をさらにアップさせることが
できる。しかし、圧電セラミックス基板１を加熱する
と、圧電特性への影響が避けられないため、この点を考
慮して基板１を加熱するかどうかを決める。If the piezoelectric ceramic substrate 1 is heated during sputtering, the adhesion strength between the electrode base film 21 and the piezoelectric ceramic substrate 1 can be further increased. However, when the piezoelectric ceramic substrate 1 is heated, the influence on the piezoelectric characteristics is unavoidable. Therefore, whether to heat the substrate 1 is determined in consideration of this point.
【００１６】以上のスパッタリング条件の下で、圧電セ
ラミックス基板１の表面全面に電極下地膜２１を形成す
る。電極下地膜２１の膜厚は、機械的強度や電気的特性
等の信頼性（さらに、リード端子を振動電極膜２ａ，２
ｂの引出し部３ａ，３ｂに半田付けする場合、あるい
は、外部電極膜１４，１５の電極下地膜の場合は、耐半
田喰れ性の観点から、使用する半田材料等）を考慮して
所定の値に設定される。本実施形態の場合、電極下地膜
２１の膜厚は、０．１〜０．３μｍの範囲内に入るよう
に設定した。こうして形成された電極下地膜２１の表面
全面に、さらに、Ａｇ，Ｃｕ，Ａｇ−Ｐｄ等からなる振
動電極膜２ａがスパッタリング法により形成される。こ
の後、圧電セラミックス基板１はスパッタリング装置か
ら取り出され、電極下地膜２１と振動電極膜２ａがエッ
チング処理される。こうして、引出し部３ａを有した円
形の振動電極膜２ａが、圧電セラミックス基板１の表面
に電極下地膜２１を介して形成される。Under the above sputtering conditions, an electrode underlayer 21 is formed on the entire surface of the piezoelectric ceramic substrate 1. The film thickness of the electrode base film 21 depends on reliability such as mechanical strength and electrical characteristics (in addition, the lead terminals are connected to the vibrating electrode films 2a, 2a,
In the case of soldering to the lead portions 3a and 3b of b, or in the case of the electrode base films of the external electrode films 14 and 15, from the viewpoint of solder erosion resistance, a predetermined solder material is used. Set to value. In the case of the present embodiment, the thickness of the electrode base film 21 is set to fall within a range of 0.1 to 0.3 μm. A vibrating electrode film 2a made of Ag, Cu, Ag-Pd or the like is further formed on the entire surface of the thus formed electrode base film 21 by a sputtering method. Thereafter, the piezoelectric ceramic substrate 1 is taken out of the sputtering device, and the electrode base film 21 and the vibration electrode film 2a are subjected to etching. Thus, the circular vibrating electrode film 2 a having the lead portion 3 a is formed on the surface of the piezoelectric ceramic substrate 1 via the electrode base film 21.
【００１７】以上のように、電極下地膜２１の材料とし
て、チタンを７．５〜８．０重量％含有したニッケル−
チタン系合金を用いることにより、セラミックスとの密
着強度が強く、エッチング性や電気特性や耐半田喰れ性
に優れた振動電極膜２ａが得られる。As described above, as a material of the electrode base film 21, nickel-titanium containing 7.5 to 8.0% by weight of titanium is used.
By using a titanium-based alloy, a vibrating electrode film 2a having strong adhesion to ceramics and excellent in etching properties, electrical properties, and resistance to solder erosion can be obtained.
【００１８】なお、本発明に係る電子部品及びその製造
方法は前記実施形態に限定するものではなく、その要旨
の範囲内で種々に変更することができる。前記実施形態
は、圧電セラミックス基板１の表面全面に電極下地膜２
１や振動電極膜２ａを形成した後、必要な部分を残して
エッチングで取り除く方法である。しかし、スパッタリ
ングの際に、所望の形状の開口部を有したマスキング材
を圧電セラミックス基板１の表面に被せ、必要な部分に
のみ電極下地膜２１や振動電極膜２ａを形成する方法で
あってもよい。The electronic component and the method of manufacturing the same according to the present invention are not limited to the above embodiment, but can be variously modified within the scope of the invention. In the embodiment, the electrode base film 2 is formed on the entire surface of the piezoelectric ceramic substrate 1.
After forming the vibration electrode film 1 and the vibrating electrode film 2a, a necessary portion is removed by etching while leaving a necessary portion. However, even in a method in which a masking material having an opening of a desired shape is covered on the surface of the piezoelectric ceramic substrate 1 at the time of sputtering, and the electrode base film 21 and the vibration electrode film 2a are formed only on necessary portions. Good.
【００１９】[0019]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、セラミックス表面に、チタンを７．５〜８．０
重量％含有したニッケル−チタン系合金からなる電極下
地膜を介して電極膜を設けたので、セラミックスとの密
着強度が強く、耐半田喰れ性やエッチング性や電気特性
に優れた電極膜を得ることができる。また、チタンを
７．５〜８．０重量％含有したニッケル−チタン系合金
からなる電極下地膜をスパッタリング法で形成すること
により、膜厚精度が高い電極下地膜を形成することがで
きる。As is apparent from the above description, according to the present invention, 7.5 to 8.0 titanium is applied to the ceramic surface.
Since the electrode film is provided via an electrode base film made of a nickel-titanium-based alloy containing by weight, an electrode film having high adhesion strength to ceramics and excellent in solder erosion resistance, etching properties and electric characteristics is obtained. be able to. Further, by forming an electrode base film made of a nickel-titanium-based alloy containing 7.5 to 8.0% by weight of titanium by a sputtering method, an electrode base film with high film thickness accuracy can be formed.
【図１】本発明に係る電子部品の一実施形態である圧電
部品の構成を示す分解斜視図。FIG. 1 is an exploded perspective view showing a configuration of a piezoelectric component which is an embodiment of an electronic component according to the present invention.
【図２】図１に示した圧電部品の外観を示す斜視図。FIG. 2 is a perspective view showing the appearance of the piezoelectric component shown in FIG.
【図３】セラミックス表面に電極膜を形成する方法を示
す一部拡大断面図。FIG. 3 is a partially enlarged cross-sectional view showing a method of forming an electrode film on a ceramic surface.
【図４】ニッケル−チタン系合金のエッチングスピード
を示すグラフ。FIG. 4 is a graph showing an etching speed of a nickel-titanium alloy.
【図５】ニッケル−チタン系合金の比抵抗を示すグラ
フ。FIG. 5 is a graph showing the specific resistance of a nickel-titanium alloy.
【図６】ニッケル−チタン系合金の飽和磁化を示すグラ
フ。FIG. 6 is a graph showing the saturation magnetization of a nickel-titanium alloy.
１…圧電体セラミックス基板 ２ａ，２ｂ…振動電極膜 １２，１３…外装セラミックス基板 １４，１５…外部電極膜 １８…圧電部品 ２１…電極下地膜 DESCRIPTION OF SYMBOLS 1 ... Piezoelectric ceramic substrate 2a, 2b ... Vibration electrode film 12, 13 ... Exterior ceramic substrate 14, 15 ... External electrode film 18 ... Piezoelectric component 21 ... Electrode base film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） // Ｈ０１Ｇ 4/12 ４２４ Ｈ０１Ｇ 4/12 ４２７ ４２７ ４３０ ４３０ Ｈ０１Ｌ 41/22 Ｚ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) // H01G 4/12 424 H01G 4/12 427 427 430 430 H01L 41/22 Z
Claims (3)
８．０重量％含有したニッケル−チタン系合金からなる
電極下地膜を介して、電極膜を設けたことを特徴とする
電子部品。1. Titanium is coated on a ceramic surface with a thickness of 7.5 to 7.5.
An electronic component, wherein an electrode film is provided via an electrode base film made of a nickel-titanium alloy containing 8.0% by weight.
μｍであることを特徴とする請求項１記載の電子部品。2. The method according to claim 1, wherein said electrode underlayer has a thickness of 0.1 to 0.3.
The electronic component according to claim 1, wherein the thickness is μm.
８．０重量％含有したニッケル−チタン系合金からなる
電極下地膜をスパッタリング法で形成したことを特徴と
する電子部品の製造方法。3. Titanium is coated on a ceramic surface for 7.5 to 7.5.
A method for manufacturing an electronic component, comprising: forming an electrode base film made of a nickel-titanium alloy containing 8.0% by weight by a sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10833099A JP3489002B2 (en) | 1999-04-15 | 1999-04-15 | Electronic component and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10833099A JP3489002B2 (en) | 1999-04-15 | 1999-04-15 | Electronic component and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000299514A true JP2000299514A (en) | 2000-10-24 |
| JP3489002B2 JP3489002B2 (en) | 2004-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10833099A Expired - Lifetime JP3489002B2 (en) | 1999-04-15 | 1999-04-15 | Electronic component and method of manufacturing the same |
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| Country | Link |
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| JP (1) | JP3489002B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003046365A (en) * | 2001-08-01 | 2003-02-14 | Sumitomo Metal Mining Co Ltd | Two-layer electrode film for crystal vibrator |
| JP2007205806A (en) * | 2006-01-31 | 2007-08-16 | Kyocera Kinseki Corp | Method for manufacturing sensor element for measurement of very small mass and its element |
| JP2013045891A (en) * | 2011-08-24 | 2013-03-04 | Taiyo Yuden Co Ltd | Electronic component and manufacturing method of the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187912A (en) * | 1988-01-22 | 1989-07-27 | Matsushita Electric Ind Co Ltd | Forming method for end face electrode of electronic component |
| JPH03116916A (en) * | 1989-09-29 | 1991-05-17 | Murata Mfg Co Ltd | Laminated type electronic part |
| JPH07131284A (en) * | 1993-11-05 | 1995-05-19 | Murata Mfg Co Ltd | Thin film electrode of piezoelectric oscillator |
| JPH09199968A (en) * | 1996-01-19 | 1997-07-31 | Murata Mfg Co Ltd | Thin film electrode for surface acoustic wave element and its forming method |
| JPH1140869A (en) * | 1997-07-18 | 1999-02-12 | Agency Of Ind Science & Technol | Metal-ceramic laminated thin film and forming method therefor |
-
1999
- 1999-04-15 JP JP10833099A patent/JP3489002B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187912A (en) * | 1988-01-22 | 1989-07-27 | Matsushita Electric Ind Co Ltd | Forming method for end face electrode of electronic component |
| JPH03116916A (en) * | 1989-09-29 | 1991-05-17 | Murata Mfg Co Ltd | Laminated type electronic part |
| JPH07131284A (en) * | 1993-11-05 | 1995-05-19 | Murata Mfg Co Ltd | Thin film electrode of piezoelectric oscillator |
| JPH09199968A (en) * | 1996-01-19 | 1997-07-31 | Murata Mfg Co Ltd | Thin film electrode for surface acoustic wave element and its forming method |
| JPH1140869A (en) * | 1997-07-18 | 1999-02-12 | Agency Of Ind Science & Technol | Metal-ceramic laminated thin film and forming method therefor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003046365A (en) * | 2001-08-01 | 2003-02-14 | Sumitomo Metal Mining Co Ltd | Two-layer electrode film for crystal vibrator |
| JP2007205806A (en) * | 2006-01-31 | 2007-08-16 | Kyocera Kinseki Corp | Method for manufacturing sensor element for measurement of very small mass and its element |
| JP2013045891A (en) * | 2011-08-24 | 2013-03-04 | Taiyo Yuden Co Ltd | Electronic component and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3489002B2 (en) | 2004-01-19 |
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