JPH01187912A - Forming method for end face electrode of electronic component - Google Patents
Forming method for end face electrode of electronic componentInfo
- Publication number
- JPH01187912A JPH01187912A JP63013411A JP1341188A JPH01187912A JP H01187912 A JPH01187912 A JP H01187912A JP 63013411 A JP63013411 A JP 63013411A JP 1341188 A JP1341188 A JP 1341188A JP H01187912 A JPH01187912 A JP H01187912A
- Authority
- JP
- Japan
- Prior art keywords
- face
- electronic component
- electrode
- temperature
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 30
- 239000011104 metalized film Substances 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000010062 adhesion mechanism Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Chemically Coating (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子部品、特に金属化フィルムコンデンサ、
セラミックコンデンサなどの小型チップ形電子部品の端
面電極形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to electronic components, in particular metallized film capacitors,
The present invention relates to a method for forming end face electrodes of small chip type electronic components such as ceramic capacitors.
従来の技術
一般に、コンデンサは誘電体層と対向電極層を交互に重
ね合わせた構造の素子端面に、対向電極各層の導電化を
目的とし、かつリード端との接続を目的として端面電極
を形成している。Conventional technology In general, a capacitor has a structure in which dielectric layers and counter electrode layers are stacked alternately, and an end face electrode is formed on the end face of the element in order to make each of the counter electrode layers electrically conductive and to connect with the lead ends. ing.
一方、近年の電子部品の小形化要求が強くなるにつれ、
誘電体層の′Ｒ膜化とチップ化が急速に進められようと
している。On the other hand, as the demand for miniaturization of electronic components has become stronger in recent years,
The conversion of dielectric layers to 'R' films and chips is rapidly progressing.
発明が解決しようとする課題
そこで、端面ｔａ形成法として、従来の金属化フィルム
コンデンサではメタリコン（金属溶射法）が、またセラ
ミックコンデンサではＡｇ／Ｐｄの印刷焼成（デイツプ
）よたは、無電解メッキが限界にきつつある。つまり、
チップ形電子部品は第４図に示すように、シート状誘Ｔ
ｈ体層１を対向電極層２を交互に重ねた後、スリット、
断裁などにより単体チップ化し、端面に電極を形成する
ため、端面Ｔｈ極影形成面凸凹のないフラットな面にな
る。Problems to be Solved by the Invention Therefore, as a method for forming the end surface TA, metallicon (metal spraying method) is used for conventional metallized film capacitors, and Ag/Pd printing and firing (dip) or electroless plating is used for ceramic capacitors. is reaching its limit. In other words,
As shown in Figure 4, chip-shaped electronic components are
After alternately stacking the h-body layers 1 and the counter electrode layers 2, slits,
Since it is made into a single chip by cutting etc. and electrodes are formed on the end face, the end face Th pole shadow forming surface becomes a flat surface with no unevenness.
したがって、メタリコンでは、その機械的付着メカニズ
ムの基本的欠陥として、くい込みがなく、付着強度の弱
い、電気特性の劣る電極となるという間コを有していた
。一方セラミックスコンデンサで用いられているＰ ｄ
／ Ａ ｇの印刷焼成でも全く同様の理由で、不充分
な電極となる上、Ｐｄを添加しないとＡｇのマイグレー
ションが発生し、コスト上および品質上での問題も含ん
でいた。無電解メッキも前処理工程として一般に知られ
ているＰｄの置換処理を必要とし、複雑でコスト高にな
る上、品質の安定に問題があった。Therefore, metallicon has a basic defect in its mechanical adhesion mechanism, which is that it does not penetrate, resulting in an electrode with weak adhesion strength and poor electrical properties. On the other hand, P d used in ceramic capacitors
/Ag printing/firing also resulted in an insufficient electrode for exactly the same reason, and if Pd was not added, migration of Ag occurred, which also included cost and quality problems. Electroless plating also requires a generally known Pd substitution process as a pretreatment process, which is complicated and costly, and there are problems with quality stability.
本発明は上記従来の問題を解決するもので、電気特性の
優れた品質安定上問題のない電子部品の端面電極形成方
法を提供することを目的とするしのである。The present invention is intended to solve the above-mentioned conventional problems, and aims to provide a method for forming end-face electrodes of electronic components that have excellent electrical characteristics and are free from problems in terms of quality stability.
課題を解決するための手段
上記課題を解決するために本発明の電子部品の端面電極
形成方法は、電子部品の端面に、マグネトロン型にｓ′
Ｉｆ１ｍ造を有する低温スパッタリング装置により、前
記電子部品の耐熱温度以下でかつ酸素を３０ａｔ％以上
含む逆スパッタガスを使用した逆スパッタを施して、前
記端面をエツチングした後、前記電子部品の耐熱温度以
下で金属化被膜を施し端面電極を形成するものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a method for forming an end face electrode of an electronic component.
After etching the end face by performing reverse sputtering using a reverse sputtering gas that is below the heat-resistant temperature of the electronic component and containing 30 at% or more of oxygen, using a low-temperature sputtering device having an If1m structure, the end face is etched. Then, a metallized film is applied to form an end face electrode.
さらに、電子部品の端面に、マグネトロン型にｔ！＃Ａ
楕遣を有する低温スパッタリング装置により、電子部品
の耐熱温度以下でかつ逆スパッタを施して、前記端面を
エツチングした後、前記電子部品の耐熱温度以下でニッ
ケルを含む金属化被膜を施し端面電極を形成するもので
ある。Furthermore, a magnetron-shaped t! #A
After etching the end face by performing reverse sputtering at a temperature below the heat resistant temperature of the electronic component using a low temperature sputtering device having an ellipse, a metallized film containing nickel is applied at a temperature below the heat resistant temperature of the electronic component to form an end face electrode. It is something to do.
さらに、ニッケルを含む金属化被膜の上に、半田付は性
を良くするために、ニッケルの無電解メッキを施して導
電層を形成し、または、鉛、錫などの半田合金およびそ
の構成金属の少なくとも１種を含む半田容易層としての
導電層を形成するものである。Furthermore, in order to improve soldering properties, nickel is electrolessly plated to form a conductive layer on top of the nickel-containing metallized film, or solder alloys such as lead and tin and their constituent metals are applied. A conductive layer as an easy-to-solder layer containing at least one kind is formed.
作用
上記方法により、逆スパッタガス中に純Ａｒに代えて、
酸素を添加していくと、電子部品の誘電体層の有機物、
たとえば、フィルム、セラミック用バインダがＣＯ２と
して化学反応を起こし、Ａｒだけのスパッタリング効果
を一層増長する。したがって、逆スパッタガス中の酸素
量が増すほど電子部品のｔａｎδ（接触抵抗）が低下し
、電子部品の電気特性を向上させることができる。Effect: By the above method, instead of pure Ar in the reverse sputtering gas,
As oxygen is added, organic matter in the dielectric layer of electronic components,
For example, binders for films and ceramics cause a chemical reaction as CO2, further increasing the sputtering effect of Ar alone. Therefore, as the amount of oxygen in the reverse sputtering gas increases, the tan δ (contact resistance) of the electronic component decreases, and the electrical characteristics of the electronic component can be improved.
さらに、電子部品の端面電極に、半田くわれが少なく耐
蝕性に潰れたニッケルを含む金属材料を用いることによ
り、電子部品の耐蝕性、耐候性を飛躍的に向上させ、そ
の寿命を延ばすことかてできる。Furthermore, by using a metal material containing corrosion-resistant nickel for the end-face electrodes of electronic components, we can dramatically improve the corrosion resistance and weather resistance of electronic components and extend their lifespan. I can do it.
実施例
以下、本発明の一実施例について図面を参照しながら説
明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の電子部品の端面電極形成方
法を実施する装置の構成図である。第１図において、真
空ペルジャー１１内に、マグネトロン型カソード１２と
対向させてサブストホルダ１３を設置し、このカソード
１２上に端面電極材料のターゲット１４を取付け、また
、サブストホルダ１３上には電子部品１５の端面電極を
形成すべき端面をターゲット１４に対向させて取付け、
サブストホルダ１３を高周波型′Ｒ１６に接続し、カソ
ード１２を直流電源１７に接続する。また、真空ペルジ
ャー１１は真空排気ポンプ１８に連結され、ガス導入口
１９．２０を有している。FIG. 1 is a block diagram of an apparatus for carrying out a method for forming end face electrodes of electronic components according to an embodiment of the present invention. In FIG. 1, a substrate holder 13 is installed in a vacuum pelger 11 facing a magnetron type cathode 12, a target 14 of an end electrode material is attached on the cathode 12, and an electronic component is placed on the substrate holder 13. Attach the end face on which the 15 end face electrodes are to be formed to face the target 14,
The substrate holder 13 is connected to a high frequency type 'R16, and the cathode 12 is connected to a DC power source 17. Further, the vacuum pelger 11 is connected to a vacuum evacuation pump 18 and has a gas inlet 19,20.
次に上記装置を用いた端面電極形成方法の一実施例を説
明する。Next, an example of a method for forming end face electrodes using the above-mentioned apparatus will be described.
実施例１
真空ポンプ１８によって、真空ペルジャー１１内を２
ｘ １０’Ｔｏｒｒにした後、ガス導入口１９からＡｒ
と０２ を０２が５０ａｔ％になるよう混合した逆スパ
ッタガスを１ ｘ １Ｏ−１Ｔｏｒｒで入れ、電子部品
１５の耐熱温度以下で、かつ高周波電源１６を用いて０
．５ｗ／ ｃｉのパワーで２分間逆スパッタエツチング
し、その後高周波電源１６を切り、再度２ ｘ １０’
Ｔｏｒｒまで真空排気ポンプ１８により真空引きした後
、ガス導入口２０がＡｒを３ ｘ １０’Ｔｏｒｒテ入
れ、電子部品１５ノ素子端面にそれぞれＮｌの金属化被
膜を３μｍずつ、電子部品１５の耐熱温度以下で、かつ
直流電源１７を用いて低温スパッタリングにより析出さ
せて端面電極を形成させた後、直流電源１７を切り、常
圧に戻して電子部品１５の素子を取出す。Example 1 The inside of the vacuum pelger 11 is pumped by the vacuum pump 18.
x 10'Torr, then Ar from the gas inlet 19
A reverse sputtering gas containing 50 at% of 02 and 02 was introduced at 1 x 1 O-1 Torr, and the temperature was lower than the heat resistance temperature of the electronic component 15 and using the high-frequency power source 16.
．． Reverse sputter etching was performed for 2 minutes with a power of 5 W/ci, then the high frequency power supply 16 was turned off, and the 2 x 10'
After evacuation to Torr using the evacuation pump 18, the gas inlet 20 is filled with Ar to 3 x 10'Torr, and a 3 μm Nl metallized film is applied to each element end face of the electronic component 15 to meet the heat resistance temperature of the electronic component 15. Below, after depositing by low-temperature sputtering using the DC power source 17 to form an end face electrode, the DC power source 17 is turned off, the pressure is returned to normal pressure, and the element of the electronic component 15 is taken out.
このように、逆スパッタ時に純Ａｒに変えて、０□ を
添加していくと、第２図に示すように、０□量が増すに
つれて電子部品１５のｔａｎδ（接触抵抗）が低下する
。これは、誘電体層の有機物（たとえば、フィルム、セ
ラミック用バインダ）がＣＯ２として、化学反応を起こ
し、Ａｒだけのスパッタリング効果をさらに増長するた
めと考えられる。さらに、端面電極の金属材料を検討し
た結果Ｃｕよりも半田くわれが少なく耐蝕性に優れたＮ
１合金を見出した。つまり、半田くわれは、Ａｇが最も
多いが、Ｃｕも実験により３μ程度あることと判明した
。それに対し、Ｎ１は半田くわれがＣｕに比べて１７３
以下で膜厚が１μでも充分であることがわかった。さら
に、金属化波ＪＩＷとしてのＮ１にＣｒ、Ｔｉ、Ｗを添
加すると、第３図に示すように、耐蝕性（耐候性すなわ
ち寿命）が良くなることも判明した。このように、電子
部品１５の端面ｉ８極としての金属化被膜は少なくとも
Ｎｌを含み、その組成比が３３ａｔ％以上のＮｉ合金で
あることが必要である。In this way, when 0□ is added instead of pure Ar during reverse sputtering, the tan δ (contact resistance) of the electronic component 15 decreases as the amount of 0□ increases, as shown in FIG. This is considered to be because the organic matter (eg, film, ceramic binder) in the dielectric layer causes a chemical reaction as CO2, further increasing the sputtering effect of Ar alone. Furthermore, after considering the metal material for the end electrodes, we found that N was superior in corrosion resistance with fewer solder cracks than Cu.
1 alloy was discovered. In other words, although the solder joints have the most Ag, it has been found through experiments that there is also about 3 μm of Cu. On the other hand, N1 has a solder joint of 173% compared to Cu.
It was found that a film thickness of 1 μm is sufficient as shown below. Furthermore, it has been found that when Cr, Ti, and W are added to N1 as the metallized wave JIW, the corrosion resistance (weather resistance, ie, life span) is improved, as shown in FIG. In this way, the metallized coating as the end face i8 pole of the electronic component 15 must contain at least Nl and be a Ni alloy with a composition ratio of 33 at % or more.
実施例２
実施例１と同様の手順で、逆スパッタエツチングして、
高周波電源１６を切り、真空引きした後、Ａｒを３ ｘ
１０’Ｔｏｒｒで入れ、電子部品１５の素子端面にそ
れぞれＮ１６０％、Ｔ ｉ ４０％のき金の金属化被膜
を３μｍずつ、低温スパッタリングにより析出させて端
面電極を形成させた後、直流電源１７を切り、常圧に戻
して電子部品１５の素子を取出す。Example 2 Reverse sputter etching was performed in the same manner as in Example 1,
After turning off the high frequency power supply 16 and evacuation, apply 3x Ar
After depositing a metallized film of 3 μm each of 160% N and 40% Ti on the element end face of the electronic component 15 by low-temperature sputtering to form an end face electrode, the DC power source 17 is turned on. Then, the pressure is returned to normal and the element of the electronic component 15 is taken out.
実施例３
実施例１と同様の手順で、逆スパッタエツチングし、高
周波電源１６を切り、真空引きした後、Ａｒを２ Ｘ
１０’Ｔｏｒｒで入れ、セラミックチップ型コンデンサ
の素子端面にそれぞれＮ１８５％／ Ｃｒ１５％の合金
の金属化被膜をは２μｍずつ低温スパッタリングにより
析出させて端面電極を形成させた後、直流電源１７を切
り、常圧に戻して電子部品１５の素子を取出し、次に、
これをバレル型メッキ治具に入れ、Ｎｉ／Ｐの！Ｊ！ｌ
：電解メッキ浴に投入し、回転させながら１０μｍの皮
膜を析出させ、よく水洗の後、さらに、Ｓ ｎ ／ Ｐ
ｄの半田メッキを２．５μｍ析出させ、水洗の後、乾
燥させる。Example 3 In the same manner as in Example 1, reverse sputter etching was performed, the high frequency power supply 16 was turned off, the vacuum was drawn, and then Ar was applied at 2×
A metallized film of 185% N/15% Cr was deposited on each end face of the element of the ceramic chip capacitor by low-temperature sputtering to form an end face electrode, and then the DC power supply 17 was turned off. Return to normal pressure, take out the element of the electronic component 15, and then
Put this into a barrel-shaped plating jig and use Ni/P! J! l
: Placed in an electrolytic plating bath, deposited a 10 μm film while rotating, washed thoroughly with water, and then S n / P
The solder plating of d is deposited to a thickness of 2.5 μm, washed with water, and then dried.
ｆｉｆ＆に半田などのＳｎ、Ｐｂ系の合金をコーティン
グしたものは、特に半田付は性が向上し、半田付は不良
に悩むユーザの期待に応えるものである。A fif& coated with a Sn or Pb alloy such as solder has particularly improved soldering properties and meets the expectations of users who are troubled by soldering defects.
以上のように、逆スパッタガスに０□ガスを混入し、そ
の量が３０ａｔ％以上で、逆スパッタエツチングした後
、低温スパッタにより端面ｔｉを形成した電子部品はｔ
ａｎδ（接触抵抗）の低減、つまり、素子の電気特性を
向上させることができる。As described above, after performing reverse sputter etching by mixing 0□ gas into the reverse sputtering gas in an amount of 30 at% or more, an electronic component in which an end face ti is formed by low-temperature sputtering is produced.
It is possible to reduce an δ (contact resistance), that is, to improve the electrical characteristics of the element.
また、低温スパッタリングした端面電極にＮ１およびそ
の合金を用いると、耐蝕性、耐候性が向上し、寿命が延
びるとともに、外装レス化が期待できる。In addition, when N1 and its alloys are used for low-temperature sputtered end electrodes, corrosion resistance and weather resistance are improved, the lifespan is extended, and it is expected that there will be no need for an exterior.
発明の効果
以・上のように本発明によれば、電子部品の端面に、マ
グネトロン型に電極構造を有する低温スパッタリング装
置により、電子部品の耐熱温度以下でかつ酸素を３０ａ
ｔ％以上含む逆スパッタガスを使用して逆スパッタを施
して端面をエツチングした後、電子部品の端面に、その
耐熱温度以下で金属化被膜を維して端面電極を形成する
ことにより電０子部品の電気特性を向上させることがで
き、特に接触抵抗を低下させることができる。Effects of the Invention As described above, according to the present invention, oxygen is applied to the end face of an electronic component at a temperature below the heat-resistant temperature of the electronic component and at a temperature of 30 μm using a low-temperature sputtering device having a magnetron-type electrode structure.
After etching the end face by reverse sputtering using a reverse sputtering gas containing t% or more, a metallized film is maintained on the end face of the electronic component at a temperature below its heat resistant temperature to form an end face electrode. The electrical properties of the component can be improved, and in particular the contact resistance can be reduced.
また、端面な極としての金属化被膜に、Ｎｉを含む合金
を用いることにより、電子部品の耐蝕性、耐候性を飛躍
的に向上させ、その寿命を延ばすことができる。Further, by using an alloy containing Ni for the metallized film serving as the end face electrode, the corrosion resistance and weather resistance of the electronic component can be dramatically improved, and the life of the electronic component can be extended.
第１図は、本発明の一実施例の電子部品の端面電極形成
方法を実施する装置の構成図、第２図は同電子部品の端
面電極形成方法における逆スパッタガスの酸素分圧と
ｔａｎδ（接触抵抗）の電気特性を示すグラフ、第３図
は同電子部品の端面電極形成方法における端面ｔｉ材料
と耐候性を示す棒グラフ、第４図はチップ型コンデンサ
を作る工程における誘″ｅｈ木層と電極層の積み重ね状
態を示す図である。
１１・・・真空ペルジャー、１２・・・カソード、１３
・・・サブストホルダ、１４・・・ターゲット、１５・
・・電子部品、１６・・・高周波電源、１７・・・直流
電源、１８・・・真空排気ポンプ、１９．２０・・・ガ
ス導入口。
代理人 森 本 義 弘
第を図
第４図
【FIG. 1 is a block diagram of an apparatus for carrying out a method for forming end surface electrodes of electronic components according to an embodiment of the present invention, and FIG. 2 shows the oxygen partial pressure of reverse sputtering gas in the method for forming end surface electrodes of electronic components.
A graph showing the electrical characteristics of tan δ (contact resistance), Fig. 3 is a bar graph showing the end face Ti material and weather resistance in the method of forming end face electrodes of the same electronic component, and Fig. 4 is a bar graph showing the weather resistance in the process of making chip-type capacitors. It is a diagram showing a stacked state of layers and electrode layers. 11... Vacuum Pelger, 12... Cathode, 13
...Subst holder, 14...Target, 15.
...Electronic components, 16..High frequency power supply, 17..DC power supply, 18..Vacuum pump, 19.20..Gas inlet. Figure 4: Agent Yoshihiro Morimoto
Claims (4)
する低温スパッタリング装置により、前記電子部品の耐
熱温度以下でかつ酸素を３０ａｔ％以上含む逆スパッタ
ガスを使用した逆スパッタを施して、前記端面をエッチ
ングした後、前記電子部品の耐熱温度以下で金属化被膜
を施し端面電極を形成する電子部品の端面電極形成方法
。1. The end surface of the electronic component was etched by performing reverse sputtering using a reverse sputtering gas that is below the heat-resistant temperature of the electronic component and containing 30 at% or more of oxygen using a low-temperature sputtering device having a magnetron-type electrode structure. A method for forming an end face electrode of an electronic component, wherein the end face electrode is formed by applying a metallized film at a temperature below the allowable temperature limit of the electronic component.
する低温スパッタリング装置により、電子部品の耐熱温
度以下でかつ逆スパッタを施して、前記端面をエッチン
グした後、前記電子部品の耐熱温度以下でニッケルを含
む金属化被膜を施し端面電極を形成する電子部品の端面
電極形成方法。2. After etching the end face of the electronic component by performing reverse sputtering at a temperature below the heat-resistant temperature of the electronic component using a low-temperature sputtering device having a magnetron-type electrode structure, the end face is etched at a temperature below the heat-resistant temperature of the electronic component containing nickel. A method for forming an end face electrode of an electronic component by applying a metallized film to form an end face electrode.
電解メッキを施して導電層を形成した請求項２記載の電
子部品の端面電極形成方法。3. 3. The method of forming an end face electrode of an electronic component according to claim 2, wherein the conductive layer is formed by electroless plating of nickel on the metallized film serving as the end face electrode.
半田合金およびその構成金属の少なくとも１種を含む半
田容易層としての導電層を形成する請求項２記載の電子
部品の端面電極形成方法。4. 3. The method for forming an end electrode of an electronic component according to claim 2, wherein a conductive layer as an easy-to-solder layer containing at least one of a solder alloy such as lead and tin and its constituent metal is formed on the metallized film as the end electrode. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013411A JPH0787161B2 (en) | 1988-01-22 | 1988-01-22 | Method for forming end face electrodes of electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013411A JPH0787161B2 (en) | 1988-01-22 | 1988-01-22 | Method for forming end face electrodes of electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01187912A true JPH01187912A (en) | 1989-07-27 |
| JPH0787161B2 JPH0787161B2 (en) | 1995-09-20 |
Family
ID=11832393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63013411A Expired - Lifetime JPH0787161B2 (en) | 1988-01-22 | 1988-01-22 | Method for forming end face electrodes of electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0787161B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06295644A (en) * | 1993-04-08 | 1994-10-21 | Nippon Steel Corp | Vacuum arc treatment method and pre-treatment method |
| JP2000299514A (en) * | 1999-04-15 | 2000-10-24 | Murata Mfg Co Ltd | Electronic component and manufacture thereof |
| JP2018067569A (en) * | 2016-10-17 | 2018-04-26 | 太陽誘電株式会社 | Ceramic electronic component and method of manufacturing the same |
-
1988
- 1988-01-22 JP JP63013411A patent/JPH0787161B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06295644A (en) * | 1993-04-08 | 1994-10-21 | Nippon Steel Corp | Vacuum arc treatment method and pre-treatment method |
| JP2000299514A (en) * | 1999-04-15 | 2000-10-24 | Murata Mfg Co Ltd | Electronic component and manufacture thereof |
| JP2018067569A (en) * | 2016-10-17 | 2018-04-26 | 太陽誘電株式会社 | Ceramic electronic component and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0787161B2 (en) | 1995-09-20 |
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