JPH0529176A - Terminal electrode for electronic component - Google Patents
Terminal electrode for electronic componentInfo
- Publication number
- JPH0529176A JPH0529176A JP3179761A JP17976191A JPH0529176A JP H0529176 A JPH0529176 A JP H0529176A JP 3179761 A JP3179761 A JP 3179761A JP 17976191 A JP17976191 A JP 17976191A JP H0529176 A JPH0529176 A JP H0529176A
- Authority
- JP
- Japan
- Prior art keywords
- external electrode
- electrode layer
- metal
- layer
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 37
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000006866 deterioration Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 12
- 239000003985 ceramic capacitor Substances 0.000 claims description 7
- 238000009833 condensation Methods 0.000 claims description 7
- 230000005494 condensation Effects 0.000 claims description 7
- 238000009834 vaporization Methods 0.000 claims description 5
- 230000008016 vaporization Effects 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 67
- 238000004544 sputter deposition Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- -1 mineral spirits Chemical compound 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000010290 vacuum plasma spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Ceramic Capacitors (AREA)
- Details Of Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミック製本体を有
する、積層セラミックコンデンサ、抵抗、ダイオード、
トランジスタ等の電子部品の端子電極に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic ceramic capacitor, a resistor, a diode, which has a ceramic body.
The present invention relates to a terminal electrode of an electronic component such as a transistor.
【０００２】[0002]
【従来の技術】電子部品として積層セラミックコンデン
サを例にすると、この種のコンデンサは一般に図５と図
６に示すような構造である。このコンデンサは、六面体
であるセラミック製本体５０と、セラミック製本体５０
を複数のセラミック層状に仕切る複数枚の内部電極５１
と、内部電極５１に導通すると共にセラミック製本体５
０の一対の側端面と側端面の回りの４面の一部分とに設
けた端子電極５２とを有する。2. Description of the Related Art Taking a monolithic ceramic capacitor as an example of electronic parts, this type of capacitor generally has a structure as shown in FIGS. This capacitor has a hexahedron ceramic body 50 and a ceramic body 50.
A plurality of internal electrodes 51 for partitioning the substrate into a plurality of ceramic layers
And conducts to the internal electrode 51 and at the same time makes the ceramic body 5
0 has a pair of side end surfaces and terminal electrodes 52 provided on a part of four surfaces around the side end surface.
【０００３】[0003]
【発明が解決しようとする課題】かかるコンデンサの端
子電極は、一般に、Ａｇ又はＡｇ／Ｐｄからなる厚膜
と、Ｎｉメッキ層と、はんだメッキ層とからなる。しか
しながら、端子電極の最表層の金属膜がＡｇ又はＡｇ合
金を主成分としているため、コンデンサの保管環境が悪
かったり（例えば腐食性ガスの雰囲気下に置く）、保管
期間が長かったりすると、Ａｇが硫化して端子電極のは
んだ濡れ性が劣化する恐れがある。はんだ濡れ性の劣化
はコンデンサを基板に実装し難くなる等の不具合を招
く。このことは、積層セラミックコンデンサに限ること
ではなく、セラミック製本体を有する一般の電子部品
〔抵抗、ダイオード、トランジスタ等（チップ型、リー
ド付型を含む）〕にも当て嵌まることである。The terminal electrode of such a capacitor generally comprises a thick film of Ag or Ag / Pd, a Ni plating layer, and a solder plating layer. However, since the outermost metal film of the terminal electrode is mainly composed of Ag or an Ag alloy, if the storage environment of the capacitor is bad (for example, placed in an atmosphere of corrosive gas) or the storage period is long, Ag will be There is a risk of sulfuration and deterioration of the solder wettability of the terminal electrode. Deterioration of solder wettability causes problems such as difficulty in mounting a capacitor on a substrate. This applies not only to the monolithic ceramic capacitor, but also to general electronic parts having a ceramic body [resistors, diodes, transistors, etc. (including chip type and lead type)].
【０００４】従って、本発明の目的は、長期間の保管や
劣悪環境下での保管を行っても端子電極のはんだ濡れ性
が劣化しない電子部品の端子電極を提供することにあ
る。Therefore, an object of the present invention is to provide a terminal electrode for an electronic component in which the solder wettability of the terminal electrode does not deteriorate even when it is stored for a long period of time or in a bad environment.
【０００５】[0005]
【課題を解決するための手段】前記目的を達成するため
に、本発明の電子部品の端子電極は、セラミック製本体
に順に設けた、セラミックとの密着強度を持つ性質を有
する金属からなる第１外部電極層と、はんだ耐熱性を有
する金属からなる第２外部電極層と、はんだ濡れ性を有
する金属からなる第３外部電極層と、はんだ濡れ性の劣
化を防止する金属からなる第４外部電極層との４層構造
であることを特徴とする。この構成により、端子電極の
最外層がはんだ濡れ性の劣化を防止する作用を有するた
め、長期間や悪環境下での保管でも、端子電極中の主成
分であるＡｇの硫化によるはんだ濡れ性の劣化は起こら
ない。In order to achieve the above object, the terminal electrode of the electronic component of the present invention is made of a metal, which is provided in order on a ceramic body and has a property of having adhesion strength to the ceramic. An external electrode layer, a second external electrode layer made of a metal having solder heat resistance, a third external electrode layer made of a metal having solder wettability, and a fourth external electrode made of a metal that prevents deterioration of solder wettability. It has a four-layer structure with layers. With this configuration, the outermost layer of the terminal electrode has a function of preventing deterioration of the solder wettability, so that even when the terminal electrode is stored for a long period of time or under a bad environment, the solder wettability due to sulfurization of Ag, which is the main component in the terminal electrode, No deterioration occurs.
【０００６】本発明の端子電極において、最内層である
第１外部電極層はセラミックとの密着強度を持つ性質を
有する金属からなる。この第１外部電極層は、セラミッ
クとの密着強度を持つ性質を有する金属がセラミック製
本体の端子電極形成面の表層に、好適には物理的蒸発凝
縮法によって打ち込まれた界面混合層であり、ファン・
デル・ワールスエネルギーによりセラミック製本体に強
く接合する。第１外部電極層を構成する金属としては、
セラミックよりも表面エネルギーが小さくて、セラミッ
クに付着し易いものがよく、Ｃｒ、Ｍｎが例示され、セ
ラミックの種類に応じて適宜選定すればよい。In the terminal electrode of the present invention, the first outer electrode layer, which is the innermost layer, is made of a metal having a property of having an adhesion strength with the ceramic. The first external electrode layer is an interfacial mixed layer in which a metal having a property of adhesive strength with ceramics is preferably driven by a physical evaporation condensation method on the surface layer of the terminal electrode forming surface of the ceramic body, fan·
Strongly bonded to the ceramic body by Del Waals energy. As the metal forming the first external electrode layer,
A material having a surface energy smaller than that of ceramics and easily adhering to the ceramics is preferable, and Cr and Mn are exemplified, and may be appropriately selected according to the type of ceramics.
【０００７】第１外部電極層上に設ける第２外部電極層
の構成材料となるはんだ耐熱性を有する金属としては、
Ｎｉ、Ｃｕ、それらの合金等があり、第３外部電極層の
構成材料となるはんだ濡れ性を有する金属としては、Ｓ
ｎ、Ａｇ、Ａｇの合金、はんだ合金等があり、それぞれ
任意に選択する。更に、最外層となる第４外部電極層の
材料としては、はんだ濡れ性の劣化を防止する限り特定
されず、はんだ合金、、Ｓｎ、Ｓｎの合金等がある。As a metal having solder heat resistance, which is a constituent material of the second external electrode layer provided on the first external electrode layer,
There are Ni, Cu, alloys thereof, and the like, and as a metal having solder wettability that is a constituent material of the third external electrode layer, S is S.
There are n, Ag, an alloy of Ag, a solder alloy, and the like, and each is arbitrarily selected. Furthermore, the material of the fourth outer electrode layer, which is the outermost layer, is not specified as long as it prevents deterioration of the solder wettability, and may be a solder alloy, Sn, Sn alloy, or the like.
【０００８】これらの金属からなる４層構造の端子電極
を形成するに先立って、前処理としてセラミック製本体
の表層をエッチングし、表層に凹凸面を形成しておく
と、第１外部電極層との密着強度が一層高まるアンカー
効果が得られる。端子電極の形成方法は、上記第１〜第
４外部電極層をセラミック製本体に順に形成できれば特
定されない。これら層のうち、第１〜第３外部電極層ま
では、物理的蒸発凝縮法を採用するのが好ましい。この
物理的蒸発凝縮法には、スパッタリング、真空蒸着又は
プラズマ溶射がある。Prior to forming the four-layer structure terminal electrodes made of these metals, the surface layer of the ceramic body is etched as a pretreatment to form an uneven surface on the surface layer. An anchor effect is obtained in which the adhesion strength of is further increased. The method of forming the terminal electrode is not specified as long as the first to fourth external electrode layers can be sequentially formed on the ceramic body. Among these layers, it is preferable to employ the physical vaporization condensation method for the first to third external electrode layers. This physical vaporization condensation method includes sputtering, vacuum deposition or plasma spraying.
【０００９】物理的蒸発凝縮法を用いて形成した第１〜
第３外部電極層からなる金属皮膜の厚さは１〜２μｍと
極めて薄くできる。この３層構造の薄膜上に更に第４外
部電極層を設けても、４層構造の端子電極の厚さ（図２
の寸法ａ）は１．０〜１００μｍとなり、Ａｇ又はＡｇ
／Ｐｄからなる従来の端子電極の厚さ（図６の寸法ｂ）
５０〜１００μｍと比べ、端子電極の厚さを広範囲に設
定できる。First to the first formed using the physical vaporization condensation method
The thickness of the metal coating formed of the third external electrode layer can be made extremely thin as 1 to 2 μm. Even if a fourth external electrode layer is further provided on the thin film having the three-layer structure, the thickness of the terminal electrode having the four-layer structure (see FIG.
A) is 1.0 to 100 μm, and Ag or Ag
/ Pd of conventional terminal electrode thickness (dimension b in Figure 6)
Compared with 50 to 100 μm, the thickness of the terminal electrode can be set in a wide range.
【００１０】[0010]
【実施例】以下、本発明の電子部品の端子電極を実施例
に基づいて説明する。図１及び図２は電子部品として積
層セラミックコンデンサを示し、図１はその斜視図を、
図２は図１の線Ａ−Ａにおける断面図を示す。このコン
デンサは、六面体のセラミック製本体１０と、セラミッ
ク製本体１０をセラミック層状に仕切る複数枚の内部電
極１１と、内部電極１１に導通する４層構造の端子電極
１２とを有する。EXAMPLES The terminal electrodes of the electronic component of the present invention will be described below based on examples. 1 and 2 show a monolithic ceramic capacitor as an electronic component, and FIG. 1 is a perspective view thereof.
FIG. 2 shows a cross-sectional view taken along the line AA of FIG. This capacitor has a hexahedral ceramic main body 10, a plurality of internal electrodes 11 that partition the ceramic main body 10 into ceramic layers, and a four-layer structure terminal electrode 12 that is electrically connected to the internal electrodes 11.
【００１１】この実施例では、端子電極１２は、セラミ
ック製本体１０の一対の側端面のみに設けてあり、その
側端面に第１外部電極層１３、第２外部電極層１４、第
３外部電極層１５、及び第４外部電極層１６を順に設け
た４層構造である。端子電極１２の厚さａは、前述した
ように１．０〜１００μｍである。但し、図２では４層
構造を明瞭にするために各外部電極層を拡大して示して
あり、セラミック製本体１０の寸法からすれば端子電極
１２の厚さａは極小である。In this embodiment, the terminal electrode 12 is provided only on a pair of side end faces of the ceramic body 10, and the first outer electrode layer 13, the second outer electrode layer 14, and the third outer electrode are provided on the side end faces. It has a four-layer structure in which the layer 15 and the fourth external electrode layer 16 are sequentially provided. The thickness a of the terminal electrode 12 is 1.0 to 100 μm as described above. However, in FIG. 2, each external electrode layer is shown in an enlarged manner to clarify the four-layer structure, and the thickness a of the terminal electrode 12 is extremely small in view of the dimensions of the ceramic body 10.
【００１２】次に、上記４層構造の端子電極１２を有す
るコンデンサの製造例を、端子電極の形成を中心に簡潔
に述べる。
実施例１
まずＢａＴｉＯ3 等のセラミック誘電体と、エチルセル
ロース、アクリル樹脂、可塑剤等の結合剤と、溶媒とを
混合・分散させて調製したスラリーから、ドクターブレ
ード法等によって１５〜５０μｍの厚さのシートを得
る。次に、Ａｇ、Ａｇ／Ｐｄ、又はＰｄ等の貴金属粉末
に、エチルセルロース等の結合剤とミネラルスピリット
等の溶媒とを混合し、粉砕・分散させて得られた内部電
極材を用いて、スクリーン印刷等によりシート上に内部
電極を形成する。これを、プレスにより加圧・加温して
積層した後、所定寸法に切断し、脱バインダー処理及び
焼成を行う。これにより、内部電極を有するセラミック
焼結体が作製される。Next, an example of manufacturing a capacitor having the above-mentioned four-layer structure terminal electrode 12 will be briefly described with a focus on the formation of the terminal electrode. Example 1 First, from a slurry prepared by mixing and dispersing a ceramic dielectric such as BaTiO 3 and the like, a binder such as ethyl cellulose, an acrylic resin and a plasticizer, and a solvent, a thickness of 15 to 50 μm by a doctor blade method or the like. Get a sheet of. Next, a noble metal powder such as Ag, Ag / Pd, or Pd is mixed with a binder such as ethyl cellulose and a solvent such as mineral spirits, pulverized and dispersed, and an internal electrode material obtained by screen printing is used. Etc. to form the internal electrodes on the sheet. This is pressed and heated by a press to be laminated, then cut into a predetermined size, and debinding and firing are performed. As a result, a ceramic sintered body having internal electrodes is produced.
【００１３】次いで、端子電極を形成するのであるが、
その前処理として前記アンカー効果を得るためにセラミ
ック焼結体の表層をエッチングし、表層を凹凸面にす
る。ここでは、端子電極を形成する方法として物理的蒸
発凝縮法のスパッタリングを用いる。スパッタリングで
は、Ａｒ等の中性ガス中においてグロー放電により加速
された中性イオンによりたたき出されたターゲット材
（端子電極材の金属）をセラミック焼結体の端子電極形
成面に打込む。Next, the terminal electrodes are formed.
As its pretreatment, the surface layer of the ceramic sintered body is etched to obtain the anchor effect, and the surface layer is formed into an uneven surface. Here, sputtering of a physical vaporization condensation method is used as a method of forming the terminal electrode. In the sputtering, a target material (metal of the terminal electrode material) knocked out by neutral ions accelerated by glow discharge in a neutral gas such as Ar is driven into the terminal electrode formation surface of the ceramic sintered body.
【００１４】それには、セラミック焼結体を既知のスパ
ッタリング装置に入れて、まずセラミックに対する密着
強度の高いクロムのスパッタリングを行うことにより、
焼結体の端子電極形成面にクロムからなる第１外部電極
層１３を形成する。次に、同じスパッタリング装置に
て、はんだ耐熱性を有するニッケルのスパッタリングを
行うことにより、第１外部電極層１３の表面にニッケル
からなる第２外部電極層１４を形成する。更に、同装置
で、はんだ濡れ性を有する銀のスパッタリングを行うこ
とにより、第２外部電極層１４の表面に銀からなる第３
外部電極層１５を形成する。そして、同様に、はんだ濡
れ性の劣化を防止するはんだ合金のスパッタリングを行
って、第３外部電極層１５上にはんだ合金からなる第４
外部電極層１６を形成する。これにより、４層構造の端
子電極が作製される。なお、スパッタリングに際して
は、焼結体の端子電極形成面以外の面を適当な治具等に
よって覆っておき、不要な端子電極が形成されないよう
にすることが望ましい。For this purpose, the ceramic sintered body is put into a known sputtering apparatus, and chromium having a high adhesion strength to the ceramic is first sputtered,
The first external electrode layer 13 made of chromium is formed on the surface of the sintered body on which the terminal electrodes are formed. Next, the second external electrode layer 14 made of nickel is formed on the surface of the first external electrode layer 13 by sputtering nickel having solder heat resistance with the same sputtering device. Further, by using the same apparatus to perform sputtering of silver having solder wettability, a third silver layer formed on the surface of the second external electrode layer 14 is formed.
The external electrode layer 15 is formed. Then, similarly, sputtering of a solder alloy that prevents deterioration of solder wettability is performed to form a fourth solder alloy on the third external electrode layer 15.
The external electrode layer 16 is formed. As a result, a terminal electrode having a four-layer structure is manufactured. At the time of sputtering, it is desirable that the surface of the sintered body other than the terminal electrode formation surface be covered with an appropriate jig or the like so that unnecessary terminal electrodes are not formed.
【００１５】実施例２
４層構造の端子電極のうち、第１〜第３外部電極層１３
〜１５までは、上記実施例１と同様にスパッタリングに
よって形成する。これで得られた素体１０を１００〜２
００℃に余熱して、図３に示すように適当な槽２０に入
れたフラックス２１を素体１０の端子電極面に付着させ
る。この後、図４において、槽３０に入れた溶融はんだ
３１をヒータ内蔵の転写板４０の一方側に薄く転写す
る。そして、更に転写板４０のはんだ４１を素体１０の
端子電極面に薄く転写し、これを他方の端子電極面にも
同様に行い、この転写膜を第４外部電極層１６とする。
なお、端子電極が側端面以外にも存在する場合は、転写
板４０を２枚使用して同様の操作を行えばよい。Example 2 Of the terminal electrodes having a four-layer structure, the first to third external electrode layers 13
Up to 15 are formed by sputtering similarly to the first embodiment. The element body 10 thus obtained is 100 to 2
After preheating to 00 ° C., the flux 21 contained in a suitable bath 20 is attached to the terminal electrode surface of the element body 10 as shown in FIG. After that, in FIG. 4, the molten solder 31 placed in the bath 30 is thinly transferred to one side of the transfer plate 40 with a built-in heater. Then, the solder 41 of the transfer plate 40 is thinly transferred to the terminal electrode surface of the element body 10 and is similarly transferred to the other terminal electrode surface, and this transfer film is used as the fourth external electrode layer 16.
If the terminal electrode is present on the side surface other than the side end surface, the same operation may be performed by using two transfer plates 40.
【００１６】実施例３
実施例２と同様に、第１〜第３外部電極層１３〜１５を
実施例１のスパッタリングによって形成する。この素体
の端子電極面にフラックスを付けずに、実施例２の溶融
はんだの代わりにクリームはんだを使用すると共に、ヒ
ータ無しの転写板を用いて、実施例２と同様に素体の端
子電極面にクリームはんだを転写する。その後、オーブ
ン又はコンベア式オーブン等にてクリームはんだを溶融
させて、薄膜の第４外部電極層１６を形成する。Example 3 Similar to Example 2, the first to third external electrode layers 13 to 15 are formed by sputtering in Example 1. Similar to Example 2, the terminal electrode of the element body was prepared by using cream solder instead of the molten solder of Example 2 without using the flux on the terminal electrode surface of the element body and using a transfer plate without a heater. Transfer the cream solder to the surface. After that, the cream solder is melted in an oven or a conveyor type oven to form a thin fourth external electrode layer 16.
【００１７】実施例４
第１及び第２外部電極層１３、１４を実施例１に示すス
パッタリングによって形成し、はんだメッキによって錫
からなる第３外部電極層１５を形成する。この場合、は
んだメッキ時に各層１３、１４のクロム層、ニッケル層
の遮蔽により、メッキ液の浸入を防止できることから、
既知のはんだメッキ工法で得られるメッキ端子の利点を
活かすと共に、メッキ液浸入による絶縁劣化を防止でき
る。更に第４外部電極層１６は、上記実施例１〜３に開
示の方法にて形成すればよい。Example 4 The first and second external electrode layers 13 and 14 are formed by the sputtering shown in Example 1, and the third external electrode layer 15 made of tin is formed by solder plating. In this case, the penetration of the plating solution can be prevented by shielding the chromium layer and the nickel layer of each layer 13 and 14 during solder plating.
The advantages of the plated terminals obtained by the known solder plating method can be utilized, and the insulation deterioration due to the penetration of the plating solution can be prevented. Furthermore, the fourth external electrode layer 16 may be formed by the method disclosed in Examples 1 to 3 above.
【００１８】なお、上記実施例１では、第１〜第３外部
電極層をスパッタリングによって形成したが、真空蒸着
又はプラズマ溶射によって形成してもよいことは言うま
でもない。又、第１〜第４外部電極層を順に構成する金
属は上記クロム、ニッケル、銀（又は錫）、はんだ合金
以外の金属をそれぞれ用いてもよい。In the first embodiment, the first to third external electrode layers are formed by sputtering, but it goes without saying that they may be formed by vacuum vapor deposition or plasma spraying. Further, as the metal constituting the first to fourth external electrode layers in order, a metal other than the above chromium, nickel, silver (or tin), and solder alloy may be used.
【００１９】[0019]
【発明の効果】本発明の電子部品の端子電極は、以上説
明したように構成されるので、下記の効果を有する。
（１）端子電極の表層の主成分であるＡｇの硫化等の現
象が発生しないため、はんだ濡れ性の劣化が起こらな
い。
（２）端子電極の最外層（第４外部電極層）は、はんだ
濡れ性と耐腐食性を備えていればよいため薄層でも構わ
ず、スパッタリング等の物理的蒸発凝縮法を用いて形成
しても、必要な厚さにするのに長時間を要しない。
（３）温度、迷走電流下にて発生するマイグレーション
を抑制できる。Since the terminal electrode of the electronic component of the present invention is constructed as described above, it has the following effects. (1) Since the phenomenon such as sulfuration of Ag, which is the main component of the surface layer of the terminal electrode, does not occur, the solder wettability does not deteriorate. (2) The outermost layer (fourth external electrode layer) of the terminal electrode may be a thin layer as long as it has solder wettability and corrosion resistance, and may be formed by a physical evaporation condensation method such as sputtering. However, it does not take a long time to reach the required thickness. (3) Migration that occurs under temperature and stray current can be suppressed.
【図１】本発明の一実施例に係る積層セラミックコンデ
ンサの斜視図である。FIG. 1 is a perspective view of a monolithic ceramic capacitor according to an embodiment of the present invention.
【図２】図１に示すコンデンサの線Ａ−Ａにおける断面
図である。FIG. 2 is a cross-sectional view taken along line AA of the capacitor shown in FIG.
【図３】本発明の実施例２に係る製造例の一工程を示す
説明図である。FIG. 3 is an explanatory diagram showing a step of a manufacturing example according to the second embodiment of the present invention.
【図４】本発明の実施例２に係る製造例の別工程を示す
説明図である。FIG. 4 is an explanatory diagram showing another process of the manufacturing example according to the second embodiment of the present invention.
【図５】従来例に係る積層セラミックコンデンサの斜視
図である。FIG. 5 is a perspective view of a multilayer ceramic capacitor according to a conventional example.
【図６】図５に示すコンデンサの線Ｂ−Ｂにおける断面
図である。6 is a cross-sectional view taken along line BB of the capacitor shown in FIG.
１０ セラミック製本体 １１ 内部電極 １２ ４層構造の端子電極 １３ 第１外部電極層 １４ 第２外部電極層 １５ 第３外部電極層 １６ 第４外部電極層 10 Ceramic body 11 internal electrodes 12 4-layer structure terminal electrode 13 First external electrode layer 14 Second external electrode layer 15 Third external electrode layer 16 Fourth external electrode layer
Claims (3)
電極が、セラミック製本体に順に設けた、セラミックと
の密着強度を持つ性質を有する金属からなる第１外部電
極層と、はんだ耐熱性を有する金属からなる第２外部電
極層と、はんだ濡れ性を有する金属からなる第３外部電
極層と、はんだ濡れ性の劣化を防止する金属からなる第
４外部電極層との４層構造であることを特徴とする電子
部品の端子電極。1. A terminal electrode of an electronic component having a ceramic body has a solder outer heat resistance, and a first outer electrode layer made of a metal having a property of having adhesion strength to the ceramic, which is sequentially provided on the ceramic body. It has a four-layer structure of a second external electrode layer made of a metal, a third external electrode layer made of a metal having solder wettability, and a fourth external electrode layer made of a metal that prevents deterioration of the solder wettability. The terminal electrode of the characteristic electronic component.
に複数枚の内部電極を形成し、この内部電極を端子電極
に導通させた積層セラミックコンデンサであることを特
徴とする請求項１記載の電子部品の端子電極。2. The electronic component is a monolithic ceramic capacitor in which a plurality of internal electrodes are formed inside a ceramic body, and the internal electrodes are electrically connected to terminal electrodes. Terminal electrodes for electronic components.
３外部電極層までは物理的蒸発凝縮法により形成された
ものであることを特徴とする請求項１又は２記載の電子
部品の端子電極。3. The electron according to claim 1, wherein among the terminal electrodes of the four-layer structure, the first to third outer electrode layers are formed by a physical vaporization condensation method. Terminal electrodes of parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179761A JPH0529176A (en) | 1991-07-19 | 1991-07-19 | Terminal electrode for electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179761A JPH0529176A (en) | 1991-07-19 | 1991-07-19 | Terminal electrode for electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0529176A true JPH0529176A (en) | 1993-02-05 |
Family
ID=16071425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3179761A Pending JPH0529176A (en) | 1991-07-19 | 1991-07-19 | Terminal electrode for electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0529176A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3532926B2 (en) * | 1997-06-16 | 2004-05-31 | 松下電器産業株式会社 | Resistance wiring board and method of manufacturing the same |
| JP2008112758A (en) * | 2006-10-27 | 2008-05-15 | Tdk Corp | Electronic component and its manufacturing process |
| KR20150053979A (en) * | 2012-10-09 | 2015-05-19 | 가부시키가이샤 무라타 세이사쿠쇼 | Laminated ceramic electronic component and method for manufacturing same |
| KR20150134274A (en) * | 2014-05-21 | 2015-12-01 | 가부시키가이샤 무라타 세이사쿠쇼 | Multilayer ceramic capacitor |
| US9520232B2 (en) | 2014-03-31 | 2016-12-13 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60120510A (en) * | 1983-12-02 | 1985-06-28 | 松下電器産業株式会社 | Method of forming terminal electrode of laminated ceramic capacitor |
| JPS6378512A (en) * | 1986-09-22 | 1988-04-08 | 株式会社村田製作所 | Ceramic capacitor |
-
1991
- 1991-07-19 JP JP3179761A patent/JPH0529176A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60120510A (en) * | 1983-12-02 | 1985-06-28 | 松下電器産業株式会社 | Method of forming terminal electrode of laminated ceramic capacitor |
| JPS6378512A (en) * | 1986-09-22 | 1988-04-08 | 株式会社村田製作所 | Ceramic capacitor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3532926B2 (en) * | 1997-06-16 | 2004-05-31 | 松下電器産業株式会社 | Resistance wiring board and method of manufacturing the same |
| JP2008112758A (en) * | 2006-10-27 | 2008-05-15 | Tdk Corp | Electronic component and its manufacturing process |
| KR20150053979A (en) * | 2012-10-09 | 2015-05-19 | 가부시키가이샤 무라타 세이사쿠쇼 | Laminated ceramic electronic component and method for manufacturing same |
| US9520232B2 (en) | 2014-03-31 | 2016-12-13 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component |
| KR20150134274A (en) * | 2014-05-21 | 2015-12-01 | 가부시키가이샤 무라타 세이사쿠쇼 | Multilayer ceramic capacitor |
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