JP2000294553A - シリコンを有する結晶性アルカリ土類金属酸化物インターフェースを備える半導体構造 - Google Patents

シリコンを有する結晶性アルカリ土類金属酸化物インターフェースを備える半導体構造

Info

Publication number
JP2000294553A
JP2000294553A JP2000065098A JP2000065098A JP2000294553A JP 2000294553 A JP2000294553 A JP 2000294553A JP 2000065098 A JP2000065098 A JP 2000065098A JP 2000065098 A JP2000065098 A JP 2000065098A JP 2000294553 A JP2000294553 A JP 2000294553A
Authority
JP
Japan
Prior art keywords
interface
silicon
layer
alkaline earth
semiconductor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000065098A
Other languages
English (en)
Japanese (ja)
Inventor
Jun Wang
ジュン・ワン
William J Ooms
ウィリアム・ジェイ・ウームス
Jerald Allen Hallmark
ジェラルド・アレン・ホールマーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JP2000294553A publication Critical patent/JP2000294553A/ja
Pending legal-status Critical Current

Links

Classifications

    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G9/00—Forming or shuttering elements for general use
    • E04G9/10—Forming or shuttering elements for general use with additional peculiarities such as surface shaping, insulating or heating, permeability to water or air
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2000065098A 1999-03-22 2000-03-09 シリコンを有する結晶性アルカリ土類金属酸化物インターフェースを備える半導体構造 Pending JP2000294553A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/274,268 US6248459B1 (en) 1999-03-22 1999-03-22 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US274268 2002-10-21

Publications (1)

Publication Number Publication Date
JP2000294553A true JP2000294553A (ja) 2000-10-20

Family

ID=23047510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000065098A Pending JP2000294553A (ja) 1999-03-22 2000-03-09 シリコンを有する結晶性アルカリ土類金属酸化物インターフェースを備える半導体構造

Country Status (5)

Country Link
US (1) US6248459B1 (US06248459-20010619-C00001.png)
EP (1) EP1043427A1 (US06248459-20010619-C00001.png)
JP (1) JP2000294553A (US06248459-20010619-C00001.png)
KR (1) KR20000076850A (US06248459-20010619-C00001.png)
TW (1) TW493276B (US06248459-20010619-C00001.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020064624A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 반도체소자의 유전체막 및 그 제조방법
JP2008034563A (ja) * 2006-07-27 2008-02-14 National Institute Of Advanced Industrial & Technology Ｍｉｓ型半導体装置

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* Cited by examiner, † Cited by third party
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SG101423A1 (en) * 1999-03-22 2004-01-30 Motorola Inc Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
SG101424A1 (en) * 1999-03-22 2004-01-30 Motorola Inc Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon
US6652989B2 (en) * 1999-04-06 2003-11-25 Ut-Battelle, Llc Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
SG99871A1 (en) * 1999-10-25 2003-11-27 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6291319B1 (en) * 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6479173B1 (en) * 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
WO2002003437A1 (en) * 2000-06-30 2002-01-10 Motorola, Inc., A Corporation Of The State Of Delaware Hybrid semiconductor structure and device
SG165139A1 (en) * 2000-07-17 2010-10-28 Freescale Semiconductor Inc Method of preparing crystalline alkaline earth metal oxides on a si substrate
EP1301941A2 (en) * 2000-07-20 2003-04-16 North Carolina State University High dielectric constant metal silicates formed by controlled metal-surface reactions
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
EP1176230A1 (en) * 2000-07-26 2002-01-30 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on an Si substrate
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US6524651B2 (en) * 2001-01-26 2003-02-25 Battelle Memorial Institute Oxidized film structure and method of making epitaxial metal oxide structure
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
DE10303875B4 (de) * 2003-01-31 2006-03-16 Technische Universität Clausthal Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur

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DE3855246T2 (de) * 1987-07-06 1996-12-05 Sumitomo Electric Industries Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung
DE3851668T3 (de) * 1987-07-24 1999-03-04 Matsushita Electric Ind Co Ltd Zusammengesetzte supraleitende Schicht.
JPH03150218A (ja) * 1989-11-07 1991-06-26 Sumitomo Electric Ind Ltd 超電導薄膜の作製方法
US5225031A (en) 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
US5482003A (en) 1991-04-10 1996-01-09 Martin Marietta Energy Systems, Inc. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process
DE4120258A1 (de) 1991-06-19 1992-12-24 Siemens Ag Verfahren zur herstellung einer schicht aus einem hochtemperatursupraleiter-material auf einem silizium-substrat
EP0568064B1 (en) 1992-05-01 1999-07-14 Texas Instruments Incorporated Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
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US5450812A (en) 1993-07-30 1995-09-19 Martin Marietta Energy Systems, Inc. Process for growing a film epitaxially upon an oxide surface and structures formed with the process
JPH09315897A (ja) 1996-05-31 1997-12-09 Sumitomo Electric Ind Ltd 水晶型結晶構造を有する単結晶酸化物薄膜および製造法
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US5767543A (en) 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
US6022410A (en) * 1998-09-01 2000-02-08 Motorola, Inc. Alkaline-earth metal silicides on silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020064624A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 반도체소자의 유전체막 및 그 제조방법
JP2008034563A (ja) * 2006-07-27 2008-02-14 National Institute Of Advanced Industrial & Technology Ｍｉｓ型半導体装置

Also Published As

Publication number Publication date
EP1043427A1 (en) 2000-10-11
US6248459B1 (en) 2001-06-19
TW493276B (en) 2002-07-01
KR20000076850A (ko) 2000-12-26

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