JP2000286511A - Ceramic substrate for electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent such division failure as burr from occurring easily and to improve a yield by forming the depth of a site that crosses a primary slit in a secondary slit relatively shallower than the other parts. SOLUTION: A ceramic substrate 1 is provided with a plurality of primary and secondary slits 2 and 3 that orthogonally cross each other as a divided groove, and the depth of the secondary slit 3 being divided later is formed to be shallower at a site that crosses the primary slit 2, namely at a site corresponding to the end part of a simple substance after division, and is relatively deeper at the other parts. Therefore, when the ceramic substrate 1 is to be divided in a rod shape along the primary slit 2, the depth of the secondary slit 3 at a site that crosses the primary slit 2 is formed to be relatively shallower than the depth of the other secondary slit 3, thus preventing a bar bending failure where the secondary slit 3 is divided from occurring easily and improving a yield.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate for an electronic component in which a dividing groove for forming a large number of insulating substrates for a chip-shaped electronic component is formed.

[0002]

2. Description of the Related Art At present, when manufacturing chip-shaped electronic components such as chip resistors, ceramic substrates are often used as insulating materials. As shown in FIG. 3A, a primary slit 2 and a secondary slit 3 of a plurality of divided grooves which are orthogonal to each other vertically and horizontally are formed on these substrates. The primary slit 2 and the secondary slit 3 are shown in FIG.
As shown in (1), the depth of each part of the ceramic substrate 1 is uniform.

In the manufacturing process of an electronic component, first, a resistor, a conductor, a protective layer, and the like are formed on a ceramic substrate 1 before division, and then, as shown in FIG. A chip-shaped electronic component is formed by dividing the ceramic substrate 1 into rods and then forming a conductor on the end surface of the divided ceramic substrate 1 and dividing the ceramic substrate 1 along the secondary slit 3 as shown in FIG. Becomes

Conventionally, the primary slit 2 and the secondary slit 3 which are orthogonal to each other have a greater depth than that of the primary slit 2 which is divided first, in order to reduce the division failure when the primary slit 2 is divided. The secondary slit 3 to be divided later is formed to be relatively shallow. (See JP-A-3-16704 and JP-B-5-54241)

[0005]

However, in the conventional dividing groove, the depth of each of the primary slit 2 and the secondary slit 3 is uniform in each part of the ceramic substrate 1, and when the primary slit 2 is divided into a rod shape. When the primary slit 2 is formed deeply to reduce the division failure of the ceramic substrate 1,
In the manufacturing process of (1), cracks and cracks in the primary slit 2 lower the yield, and in the subsequent electronic component manufacturing process, cracks are likely to occur, causing a reduction in the yield. Further, if the depth of the secondary slit 3 is too deep, there occurs a defect that the primary slit 2 is broken into bars when the primary slit 2 is divided into rods. If it is shallow, the secondary slit 3 is not divided neatly when divided, causing burrs and the like.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and has been made in consideration of the above-mentioned problems, and has been made in consideration of the above problem. The substrate has a primary slit for splitting first and a secondary slit for splitting later,
The secondary slit is characterized in that a portion of the secondary slit that intersects with the primary slit is formed relatively shallower than other portions.

[0007]

Embodiments of the present invention will be described below in detail. As shown in FIG. 1, the ceramic substrate 1 of the present invention has a plurality of primary slits 2 and secondary slits 3 orthogonal to each other as division grooves. The secondary slit 3 is formed so that the depth of the secondary slit 3 is shallow near the part where the primary slit 2 intersects with the primary slit 2, that is, near the part corresponding to the end of the single body after division, and relatively deep in other parts. . Accordingly, when the ceramic substrate 1 is divided into rods along the primary slits 2, the depth of the secondary slits 3 at the portion intersecting with the primary slits 2 is relatively larger than the depths of the other secondary slits 3. Since the secondary slit 3 is formed to be shallow, bar breakage failure in which the secondary slit 3 is divided hardly occurs, and the yield is improved. In addition, in the step of finally dividing the single body along the secondary slit 3, the depth near the end of the single body of the secondary slit 3 is shallow, but is relatively deep in other portions. In addition, a division failure such as burrs does not easily occur, and the yield is improved. The preferred ranges of the depths of the primary slit 2 and the secondary slit 3 are, as described with reference to FIG. 2A, the thickness T of the ceramic substrate 1, the depth D1 of the primary slit 2, and the depth of the deepest part of the secondary slit 3. D2, the depth D3 of the shallowest part of the secondary slit 3
D1 = 0.25T to 0.55T, D2 <D
1, D2 = 0.15T to 0.45T, D3 <D2, D3
= 0.08T to 0.25T. This is because if the depth D1 of the primary slit 2 is larger than 0.55T, cracks and cracks are likely to occur in the steps of manufacturing the ceramic substrate 1 and the steps before dividing the electronic component, and D1 is smaller than 0.25T. D1 = 0.2 because the primary slit 2 cannot be easily divided at the time of division.
A range of 5T to 0.55T is preferred. On the other hand, the depth D2 of the deepest part of the secondary slit 3 is set to D2 <D1 and 0.45T in order to prevent a bar break defect that is divided up to the secondary slit 3 when the primary slit 2 is divided. If it is larger, the bar is likely to be broken, and if it is smaller than 0.15T, burrs will be generated at the end of the single body. D2 = 0.1
5T to 0.45T is a preferable range. The depth D3 of the shallowest part of the secondary slit 3 is D3 <D2, and 0.2
If it is deeper than 5T, it is easy for the bar to be broken.
If it is smaller, burrs are likely to be generated at the end of the single unit.
It is preferable that 3 = 0.08T to 0.25T. Also, the shape of the secondary slit 3 is preferably deep in a reverse parabolic shape as shown in FIG.
A shape that becomes deeper in a rectangular shape as shown in (b), or
As shown in FIG. 2 (c), a shape that is deeper in a C plane shape from a portion intersecting with the primary slit 2 may be used. In this case, the pitch L between the primary slits 2, the length L1 of the shallowest portion of the rectangular secondary slit 3, the length of the C surface from the shallowest portion of the C-shaped secondary slit 3 When L2, L1 = L2 =
It is preferable that the maximum value is 0.1 mm to 0.2 L and the maximum value is 2.0 mm or less.

This is because when the length L1 of the shallowest portion of the rectangular secondary slit 3 or the length L2 of the C-plane from the shallowest portion of the C-shaped secondary slit 3 is smaller than 0.1L. However, when the primary slit 2 is divided, the bar that is divided into the secondary slits 3 is liable to be broken. Conversely, when it is larger than 0.2 L, burrs are generated when the secondary slit 3 is divided into single pieces. This is because division failure occurs. As described above, in the present invention, the depth D1 of the primary slit 2 is
In the manufacturing process of the ceramic substrate 1 and the process before the division of the electronic components, the depth is set to be deep as long as cracks and cracks do not occur, and the depth D1 of the primary slit 2 is uniform at any part of the ceramic substrate 1. The depth D2 of the deepest part of the secondary slit 3 is made slightly shallower than the depth D1 of the primary slit 2 to prevent the occurrence of burrs at the end of the single unit without lowering the dividability at the time of dividing the unit. Value. Also, the depth D3 of the shallowest part of the secondary slit 3 and the length L of the shallowest part of the secondary slit 3 in the rectangular shape of the secondary slit 3
1 and the length L2 of the C-plane from the shallowest part of the secondary slit 3 in the C-plane shape of the secondary slit 3 is a bar break that is divided up to the secondary slit 3 when the primary slit 2 is divided. It is set to a value that can prevent the occurrence of burrs and the like at the end of the single unit when the secondary slit 3 is divided into the unit and the defective unit. The tip angles of the primary slit 2 and the secondary slit 3 are 30 to
It is preferable to set the range to 60 °.

The material of the ceramic substrate 1 of the present invention can be applied not only to alumina but also to ceramics mainly composed of aluminum nitride, silicon carbide or the like, or glass ceramics. Is pressed against a ceramic green sheet to form a primary slit 2 and a secondary slit 3, and then fired at a predetermined temperature to manufacture. As the inverted parabolic, rectangular, or C-plane shape of the secondary slit 3, a blade obtained by processing a blade for the secondary slit 3 into the shape is used. The ceramic substrate 1 of the present invention can finally produce an electronic component such as a chip resistor by printing and dividing a conductor or the like in a predetermined pattern.

[0010]

EXAMPLES] Al ₂ O ₃ content of 96% of the ceramic green sheets to prepare a ceramic substrate 1 by subsequently forming the dividing grooves by pressing a blade provided in the mold fired at a predetermined temperature. With respect to the ceramic substrates 1 of the embodiment of the present invention and the comparative example of the prior art,
Table 1 shows the depth of the secondary slit 3, cracks and cracks in the manufacturing process of the ceramic substrate 1, and the division of the primary slit 2 and the secondary slit 3. The thickness of the fired ceramic substrate 1 is 0.4 mm, and the pitch L between the primary slits 2 is 2.0 mm in both the present invention example and the conventional product comparative example. Further, the depth of the slit was measured by coloring the slit with Magic (registered trademark) ink, penetrating the slit, dividing the slit, and measuring the depth of the colored portion of the divided cross section with a tool microscope. Since the depth of the slit has a variation of about 0.01 mm in each place, it is represented by an average value of measured values at arbitrary 10 places. In addition, the evaluation of cracking, cracking failure, and division failure of the primary slit 2 and the secondary slit 3 was evaluated as x with the worst defective rate of the comparative example of the conventional product in each 200 sheet sample, and could be reduced with respect to this defective rate. Those that exceeded half of the product were evaluated as Δ, and those that were less than half the evaluation were evaluated as O.

[0011]

[Table 1]

Conventional ceramic substrate 1 as a comparative example
Is a primary slit 2 and a secondary slit 3 which are usually set.
Each of them was manufactured and evaluated within the range of the depth. In the conventional product A, the depth D1 of the primary slit 2 is set to 0.
19 mm, the depth D2 of the deepest part of the secondary slit 3 is set to 0.0.
7 mm, the depth of each part was uniform, and no cracks or cracks occurred in the manufacturing process of the ceramic substrate 1 and no division failure of the primary slit 2 occurred. Burrs were found on the edges. The conventional product B has a primary slit 2
The depth D1 is 0.19 mm, the depth D2 of the deepest part of the secondary slit 3 is 0.11 mm, and the depth in each part is uniform. There were many broken bars broken down to three. Conventional product C has a depth D1 of primary slit 2 of 0.23 mm,
Although the depth D2 at the deepest portion of the secondary slit 3 was 0.11 mm and the depth at each portion was uniform, cracks and cracks in the primary slit 2 occurred frequently in the manufacturing process of the ceramic substrate 1. In addition, the division failure of the primary slit 2 and the secondary slit 3 did not occur.

In the embodiment of the present invention, the secondary slit 3 has a reverse parabolic shape as shown in FIG. 2A, a rectangular shape as shown in FIG. 2B, and a C-plane shape as shown in FIG. In three shapes, the depth D1 of the primary slit 2 is set to 0.09, 0.10, 0.19,
0.22, 0.23mm in 5 steps, secondary slit 3
Is the depth D2 of the primary slit 2
1, 0.05, 0.06, 0.11, 0.
18 and 0.19 mm, and the depth D3 of the shallowest part of the secondary slit 3 also corresponds to the depth D1 of the primary slit 2 in the same manner, and 0.030, 0.032, 0.07, 0 .1
Five steps of 0 and 0.11 mm were made, and five steps from each shallow one A to deep one E were made for each of the three shapes of the secondary slit 3 having a reverse parabolic shape, a rectangular shape, and a C-plane shape. .
In addition, the length L1 of the shallowest part of the two types of secondary slits 3 in which the shape of the secondary slit 3 is rectangular and the C-plane shape and the length L2 of the C-plane from the shallowest part of the secondary slit 3 are as follows: Corresponding to the order of the depth D1 of the primary slit 2, 0.41, 0.40, 0.2
5, 0.20, and 0.19 mm.

The results of the embodiment of the present invention show that the secondary slit 3 has a reverse parabolic shape, a rectangular shape, and a C-plane shape, and the depth D1 of the primary slit 2 is 0.09 m.
m, the depth D2 of the deepest part of the secondary slit 3 is 0.05 m
m, the depth D3 of the shallowest part of the secondary slit 3 is 0.030 m
m, the length L1 of the shallowest portion of the rectangular secondary slit 3 and the length L of the C-plane from the shallowest portion of the C-shaped secondary slit 3
In the case of 2 having a diameter of 0.41 mm, there were no cracks and cracks during the manufacturing process of the ceramic substrate 1, but there was a case in which burrs were generated at the ends when the primary slit 2 and the secondary slit 3 were divided. As compared with the comparative example of the conventional product, the division failure rate of the primary slit 2 and the secondary slit 3 could not be reduced to less than half.

Embodiment E of the present invention, that is, the depth D1 of the primary slit 2 is 0.23 mm, the depth D2 of the deepest part of the secondary slit 3 is 0.19 mm, and the depth D3 of the secondary slit 3 is the deepest part. Is 0.11 mm, the length L1 of the shallowest portion of the rectangular secondary slit 3 and the length L2 of the C-plane from the shallowest portion of the C-shaped secondary slit 3 are 0.19 mm. Cracks and cracking of the primary slit 2 occurred during the manufacturing process of the substrate 1, and the crack and cracking failure rate could not be reduced to half or less of the conventional product comparative example. In addition, when the primary slit 2 was divided, some of the bar breakage failures, which were divided up to the secondary slits 3, also occurred, and the failure rate of the primary slits 2 could not be reduced to less than half that of the comparative example. However, there was no burr at the end of the normally divided one.

Embodiments B, C and D of the present invention, that is, the secondary slit 3 has a reverse parabolic shape, a rectangular shape and a C-plane shape, and the depth D1 of the primary slit 2 is 0.10, 0.19, 0 .2
2 mm, the depth D2 of the deepest part of the secondary slit 3 is 0.0
6, 0.11, 0.18 mm, the depth D3 of the shallowest part of the secondary slit 3 is 0.032, 0.07, 0.10 mm, and the length L1 of the shallowest part of the rectangular secondary slit 3 In the case where the length L2 of the C-plane from the shallowest part of the secondary slit 3 having the C-plane shape is 0.40, 0.25, and 0.20 mm, cracks in the primary slit 2 during the manufacturing process of the ceramic substrate 1 The defect rate of cracks and cracks is less than half that of the comparative example of the conventional product. Also, when the primary slit 2 is divided, the broken bar divided up to the secondary slit 3 and when the primary slit 2 and the secondary slit 3 are divided. Any defective rate of generation of burrs on the edge was less than half that of the conventional product. From these facts, it can be said that the occurrence of cracks and the like in the steps before the division of the electronic component can be significantly reduced.

[0017]

According to the present invention, a ceramic substrate for taking a large number of insulating substrates for chip-shaped electronic components has a primary slit for dividing first and a secondary slit for dividing later. By forming the depth of the portion of the secondary slit that intersects with the primary slit relatively shallower than other portions, cracks and cracks are caused in the process of manufacturing the ceramic substrate and the subsequent process before dividing the electronic component. In addition, it is possible to prevent the occurrence of defective primary slits and secondary slits in the electronic component manufacturing process, and to prevent the occurrence of burrs after division, thereby improving yield and improving productivity. .

[Brief description of the drawings]

FIG. 1 is a sectional view of a dividing groove of a ceramic substrate for electronic components of the present invention.

FIGS. 2A, 2B, and 2C are cross-sectional views of a dividing groove of a ceramic substrate for an electronic component of the present invention.

FIG. 3A is a perspective view of a ceramic substrate for an electronic component in which a dividing groove is formed, and FIG. 3B is a cross-sectional view of a conventional dividing groove.

FIG. 4 is a perspective view of a ceramic substrate divided into rod shapes.

FIG. 5 is a perspective view of a ceramic substrate divided into single pieces.

[Explanation of symbols]

 1, ceramic substrate 2, primary slit 3, secondary slit T, thickness of ceramic substrate D1, depth of primary slit D2, depth of secondary slit deepest D3, depth of secondary slit shallowest L, pitch between primary slits L1, length of shallowest part of secondary slit L2, length of C plane from shallowest part of secondary slit

Claims (1)

[Claims] 1. A ceramic substrate for taking a large number of insulating substrates of a chip-shaped electronic component, comprising a primary slit for dividing first and a secondary slit for dividing later. A ceramic substrate for an electronic component, wherein a depth of a portion intersecting with a primary slit is formed relatively shallower than other portions.