JP2000267596A5 - - Google Patents
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- Publication number
- JP2000267596A5 JP2000267596A5 JP1999070273A JP7027399A JP2000267596A5 JP 2000267596 A5 JP2000267596 A5 JP 2000267596A5 JP 1999070273 A JP1999070273 A JP 1999070273A JP 7027399 A JP7027399 A JP 7027399A JP 2000267596 A5 JP2000267596 A5 JP 2000267596A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- electro
- optical device
- insulating film
- data line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims description 62
- 239000003990 capacitor Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7027399A JP3687399B2 (ja) | 1999-03-16 | 1999-03-16 | 電気光学装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7027399A JP3687399B2 (ja) | 1999-03-16 | 1999-03-16 | 電気光学装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000267596A JP2000267596A (ja) | 2000-09-29 |
| JP2000267596A5 true JP2000267596A5 (enrdf_load_stackoverflow) | 2004-09-30 |
| JP3687399B2 JP3687399B2 (ja) | 2005-08-24 |
Family
ID=13426759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7027399A Expired - Fee Related JP3687399B2 (ja) | 1999-03-16 | 1999-03-16 | 電気光学装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3687399B2 (enrdf_load_stackoverflow) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3931547B2 (ja) * | 2000-10-18 | 2007-06-20 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
| KR20030062156A (ko) * | 2002-01-16 | 2003-07-23 | 일진다이아몬드(주) | 보존용량 캐패시터를 갖는 액정디스플레이 패널 및 그제조공정 |
| JP3788387B2 (ja) * | 2002-05-10 | 2006-06-21 | セイコーエプソン株式会社 | 電気光学装置および電気光学装置の製造方法 |
| KR20030096562A (ko) * | 2002-06-14 | 2003-12-31 | 일진다이아몬드(주) | 박막트랜지스터 액정 표시장치 및 제조 방법 |
| JP4506133B2 (ja) * | 2002-10-31 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4095518B2 (ja) | 2002-10-31 | 2008-06-04 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4045226B2 (ja) * | 2002-10-31 | 2008-02-13 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| KR100760939B1 (ko) | 2003-05-23 | 2007-09-21 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치 및 그의 제조방법 |
| JP2005222019A (ja) | 2004-01-07 | 2005-08-18 | Seiko Epson Corp | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 |
| JP4475238B2 (ja) | 2006-01-13 | 2010-06-09 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに電子機器 |
| JP5228397B2 (ja) * | 2007-04-10 | 2013-07-03 | 住友金属鉱山株式会社 | 耐熱遮光フィルムとその製造方法、及びそれを用いた絞り又は光量調整装置 |
| JP2009237558A (ja) * | 2008-03-05 | 2009-10-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| JP2014106428A (ja) * | 2012-11-28 | 2014-06-09 | Japan Display Inc | 表示装置及び電子機器 |
| KR102028974B1 (ko) * | 2013-01-25 | 2019-10-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 이의 제조 방법 |
| JP6303748B2 (ja) * | 2014-04-14 | 2018-04-04 | セイコーエプソン株式会社 | 電気光学装置、光学ユニット、及び電子機器 |
| JP2019074553A (ja) * | 2017-10-12 | 2019-05-16 | 株式会社ジャパンディスプレイ | 表示装置 |
-
1999
- 1999-03-16 JP JP7027399A patent/JP3687399B2/ja not_active Expired - Fee Related
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