JP2000228475A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2000228475A JP2000228475A JP11028576A JP2857699A JP2000228475A JP 2000228475 A JP2000228475 A JP 2000228475A JP 11028576 A JP11028576 A JP 11028576A JP 2857699 A JP2857699 A JP 2857699A JP 2000228475 A JP2000228475 A JP 2000228475A
- Authority
- JP
- Japan
- Prior art keywords
- island
- semiconductor device
- hollow
- heat
- pkg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置に関
し、特にプラスチック型ＣＣＤ中空ＰＫＧ（パッケ−
ジ）用を有する半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a plastic CCD hollow PKG (package).
The present invention relates to a semiconductor device having an object.
【０００２】[0002]
【従来の技術】従来、発熱源を有する半導体装置として
は、例えば特開昭６１−２２２３８４号公報の半導体装
置およびその製造方法や、特開平６−２８３６１６号公
報の半導体装置及び半導体装置用金型などが提案されて
いる。2. Description of the Related Art Conventionally, as a semiconductor device having a heat source, for example, a semiconductor device and a method of manufacturing the semiconductor device disclosed in JP-A-61-222384, and a semiconductor device and a mold for a semiconductor device disclosed in JP-A-6-283616 are disclosed. And so on.
【０００３】前者はカラー固体撮像装置に関するもので
あり、図３にその斜視図を示す。図３において、透明基
板を有する固体撮像素子（ＣＣＤ）１０１をリードフレ
ーム１１２上に設置し、透明基板の上面に開口部１１８
を設けるべく、透明基板の外線を含み、半導体素子及び
リードフレーム１１２の一部を樹脂１１９で形成するよ
うになっている。[0003] The former relates to a color solid-state imaging device, and FIG. In FIG. 3, a solid-state imaging device (CCD) 101 having a transparent substrate is set on a lead frame 112, and an opening 118 is formed on the upper surface of the transparent substrate.
The semiconductor element and a part of the lead frame 112 are formed of the resin 119, including the outer lines of the transparent substrate.
【０００４】また、後者もＣＣＤを有する半導体装置に
関するものであり、図４にその構成を示す断面図を示
す。図４において、凹み部２３０を有するプラスチック
リッド２２９を半導体チップ２０２（ＣＣＤエリアセン
サなど）が配された基台２２１に載せ、基台２２１との
間の隙間に接着剤２３２を入れて基台２２１と接着する
ようになっている。[0004] The latter also relates to a semiconductor device having a CCD, and FIG. 4 is a sectional view showing the structure thereof. In FIG. 4, a plastic lid 229 having a recess 230 is placed on a base 221 on which a semiconductor chip 202 (CCD area sensor or the like) is arranged, and an adhesive 232 is inserted into a gap between the base 221 and the base 221. It comes to adhere.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述し
た従来の半導体装置においては、ＣＣＤの動作時、その
出力部にある信号増幅素子が発熱源となり、次に説明す
るような理由からここからの発熱が十分に放熱されない
ため、温度特性絡みの問題が発生していた。However, in the above-mentioned conventional semiconductor device, when the CCD is operated, the signal amplifying element at the output thereof serves as a heat source, and the heat generated therefrom for the following reason. Is not sufficiently dissipated, causing a problem of temperature characteristic entanglement.
【０００６】すなわち、ＣＣＤはその機能上中空構造と
なっており、ＣＣＤ内の溌熱源からの発熱は、内部の中
空部及びＣＣＤをマウントするアイランドを経路にして
放熱される。しかし、中空部の空気は熱伝導度が低く、
また、アイランドはＣＣＤの熱履歴緩和を考慮して、金
属部分を連続する台形状に打ち抜いて細くしていること
から、熱源からの放熱量が不充分になるのである。That is, the CCD has a hollow structure in terms of its function, and heat generated from a heat-repelling source in the CCD is radiated through the internal hollow portion and the island on which the CCD is mounted. However, the air in the hollow part has low thermal conductivity,
In addition, since the island is formed by punching the metal portion into a continuous trapezoidal shape in consideration of the relaxation of the thermal history of the CCD, the amount of heat radiation from the heat source becomes insufficient.
【０００７】本発明は上記従来の問題点に着目してなさ
れたもので、発熱源からの発熱を迅速に放熱することが
可能な半導体装置を提供することを目的としている。The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a semiconductor device capable of rapidly radiating heat generated from a heat source.
【０００８】[0008]
【課題を解決するための手段】本発明に係る半導体装置
は、半導体チップに局在する発熱源直下のアイランド部
にフラット部を設けたことを特徴とし、これにより上記
目的を達成することができる（請求項１）。A semiconductor device according to the present invention is characterized in that a flat portion is provided in an island portion located immediately below a heat source localized in a semiconductor chip, thereby achieving the above object. (Claim 1).
【０００９】本発明に係る半導体装置は、半導体チップ
に局在する発熱源直下のアイランド部に放熱部材を突設
したことを特徴とし、これにより上記目的を達成するこ
とができる（請求項２）。A semiconductor device according to the present invention is characterized in that a heat radiating member is protruded from an island portion located directly below a heat source localized in a semiconductor chip, thereby achieving the above object. .
【００１０】また、本発明においては、前記半導体チッ
プはプラスチック型ＣＣＤ中空ＰＫＧであり、前記発熱
源は信号増幅用素子であることを特徴とする（請求項
３）。In the present invention, the semiconductor chip is a plastic CCD hollow PKG, and the heat source is a signal amplifying element.
【００１１】（作用）本発明に係る半導体装置によれ
ば、発熱源直下のアイランド部の面積がフラット部によ
って拡大されるので、発熱源からの発熱を迅速に放熱で
きる（請求項１）。(Function) According to the semiconductor device of the present invention, since the area of the island portion immediately below the heat source is enlarged by the flat portion, heat generated from the heat source can be quickly radiated.
【００１２】また、発熱源直下のアイランド部の断面積
が放熱部材によって拡大されるので、発熱源からの発熱
を迅速に放熱できる（請求項２）。Further, since the cross-sectional area of the island portion immediately below the heat source is enlarged by the heat radiating member, heat generated from the heat source can be quickly radiated.
【００１３】[0013]
【発明の実施の形態】以下、本発明に係る半導体装置の
実施の形態について、図面を参照して詳細に説明する。
図１は本発明に係る半導体装置の第１の実施の形態を示
す図、図２は本発明に係る半導体装置を示す図で、図１
のＡ−Ａ断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a semiconductor device according to the present invention will be described in detail with reference to the drawings.
FIG. 1 is a diagram showing a first embodiment of a semiconductor device according to the present invention, and FIG. 2 is a diagram showing a semiconductor device according to the present invention.
It is AA sectional drawing of.
【００１４】（第１の実施の形態）図１に示すように、
本発明に係る第１の実施の形態の半導体装置は、銅材を
圧延、加工、成形することにより得られるリ−ドフレ−
ム１を使用している。このリードフレーム１には、半導
体チップである例えばプラスチックＣＣＤ中空ＰＫＧ４
をマウントするためのアイランド部２が、台形状の打ち
抜き部を連続的に加工することにより設けられている。
また、アイランド部２の一部分には、打ち抜き加工をし
ないフラット部２１が設けられている。なお、図中の符
号３はインナーリード部である。(First Embodiment) As shown in FIG.
The semiconductor device according to the first embodiment of the present invention is a lead frame obtained by rolling, processing, and forming a copper material.
Using the program 1. The lead frame 1 has a semiconductor chip, for example, a plastic CCD hollow PKG4.
Is provided by continuously processing trapezoidal punched portions.
Further, a flat portion 21 that is not punched is provided in a part of the island portion 2. Reference numeral 3 in the drawing denotes an inner lead portion.
【００１５】プラスチックＣＣＤ中空ＰＫＧ４は、樹脂
系の材料によってアイランド部２上にマウントされる。
このときには、プラスチックＣＣＤ中空ＰＫＧ４に設け
られている発熱源、即ち信号増幅用素子部がフラット部
２１の範囲内に位置するように設置される。The plastic CCD hollow PKG 4 is mounted on the island 2 by a resin-based material.
At this time, the heat source provided in the plastic CCD hollow PKG 4, that is, the signal amplifying element portion is installed so as to be located within the range of the flat portion 21.
【００１６】この半導体装置においては、プラスチック
ＣＣＤ中空ＰＫＧ４内に局在する発熱源である信号増幅
用素子部からの発熱がその周囲の空気と、信号増幅用素
子部の直下のフラット部２１と、プラスチックＣＣＤ中
空ＰＫＧ４の電極（図示せず）及びインナーリード部３
とを経て放熱される。In this semiconductor device, heat generated from the signal amplifying element, which is a heat source localized in the plastic CCD hollow PKG 4, is generated by surrounding air, a flat portion 21 immediately below the signal amplifying element, and Electrode (not shown) of plastic CCD hollow PKG4 and inner lead part 3
Heat is dissipated through
【００１７】そして、上述のように本発明では、アイラ
ンド部２に打ち抜き加工をしないフラット部２１を設け
たので、このフラット部２１の熱容量がその他のアイラ
ンド部２より大きくなり、熱伝導度が高くなる。これに
より、発熱源である信号増幅用素子部からの発熱を迅速
に放熱することができるので、プラスチックＣＣＤ中空
ＰＫＧ４に温度特性絡みの問題が発生するのを防止でき
る。As described above, in the present invention, since the flat portion 21 which is not punched is provided in the island portion 2, the heat capacity of the flat portion 21 is larger than that of the other island portions 2, and the heat conductivity is high. Become. As a result, heat generated from the signal amplifying element, which is a heat source, can be quickly dissipated, thereby preventing the plastic CCD hollow PKG 4 from having a problem related to temperature characteristics.
【００１８】なお、上述のフラット部２１を含むアイラ
ンド部２の材料は、熱放散により有利な熱伝導度の高い
ものを選定する。例えばＣｕ系のＥＦＴＥＣ６４（５０
００×１０-4）等で熱伝導度の高い金属であればよく、
Ｃｕ系のＫＬＦ−４（１８００×１０-4cal/cmsec℃）
等を使用できる。The material of the island portion 2 including the above-mentioned flat portion 21 is selected from materials having high thermal conductivity, which is advantageous due to heat dissipation. For example, Cu-based EFTEC64 (50
00 × 10−4) etc. as long as the metal has high thermal conductivity.
Cu-based KLF-4 (1800 × 10 -4 cal / cmsec ° C)
Etc. can be used.
【００１９】（第２の実施の形態）図２は、本発明に係
る半導体装置の第２の実施の形態を示す図で、図１のＡ
−Ａ断面図である。この半導体装置は、半導体チップで
あるプラスチックＣＣＤ中空ＰＫＧ４の裏面側に、アイ
ランド部２の一部が見えるように細長くなっている開口
部６，７が設けられている。開口部６はアイランド部２
に対応しており、開口部７はインナ−リ−ド部３に対応
している。なお、図中の符号５はエポキシ樹脂、８はキ
ャップ、９は中空部である。(Second Embodiment) FIG. 2 is a view showing a semiconductor device according to a second embodiment of the present invention.
It is -A sectional drawing. In this semiconductor device, elongated openings 6 and 7 are provided on the back side of the plastic CCD hollow PKG 4 which is a semiconductor chip so that a part of the island portion 2 can be seen. Opening 6 is island 2
The opening 7 corresponds to the inner lead portion 3. In addition, the code | symbol 5 in a figure is an epoxy resin, 8 is a cap, 9 is a hollow part.
【００２０】これらの開口部６，７は、プラスチックＣ
ＣＤ中空ＰＫＧ４と、インナーリ−ド部３とを金属細線
（図示せず）で接続する際に両接続部を加熱するために
ヒ−タブロック（図示せず）を当てるためのものであ
り、金属細線の接続が終了した後は開口部６，７をＵＶ
硬化樹脂で埋めることにより密封している。These openings 6 and 7 are made of plastic C
When the CD hollow PKG 4 and the inner lead portion 3 are connected by a thin metal wire (not shown), a heater block (not shown) is applied to heat both connection portions. After the connection of the fine wire is completed, the openings 6 and 7 are UV
Sealed by filling with hardened resin.
【００２１】そして、このＵＶ硬化樹脂の熱伝導度は比
較的低いため、例えば銀ペーストなど熱伝導度の高い物
質によってアイランド部２の下部側に放熱部材、例えば
銅等の金属片２２を突設する。そして、この金属片２２
をＵＶ硬化樹脂に埋め込む。これによって、アイランド
部２と金属片２２との両方で放熱することが可能にな
る。Since the thermal conductivity of the UV curable resin is relatively low, a heat radiating member, for example, a metal piece 22 of copper or the like is projected below the island portion 2 by using a material having high thermal conductivity such as a silver paste. I do. And this metal piece 22
Is embedded in a UV curable resin. Thus, heat can be radiated by both the island portion 2 and the metal piece 22.
【００２２】したがって、アイランド部２に接触してい
るプラスチックＣＣＤ中空ＰＫＧ４内の発熱源である信
号増幅用素子部からの放熱経路が拡大され、放熱を迅速
に行うことができる。この第２の実施の形態と上述の第
１の実施の形態は、それぞれ別々に実施することがで
き、また、併用することにより更に大きな相乗効果を上
げることができる。Therefore, the heat radiating path from the signal amplifying element, which is a heat source in the plastic CCD hollow PKG 4 which is in contact with the island 2, is expanded, and heat can be rapidly radiated. The second embodiment and the above-described first embodiment can be implemented separately, and when used together, a greater synergistic effect can be achieved.
【００２３】[0023]
【発明の効果】以上説明したように、本発明に係る半導
体装置によれば、発熱源直下のアイランド部の面積がフ
ラット部によって拡大されるので、発熱源からの発熱を
迅速に放熱でき、これにより、半導体チップの温度特性
に絡む問題が発生するのを防止できる（請求項１）。As described above, according to the semiconductor device of the present invention, since the area of the island portion immediately below the heat source is expanded by the flat portion, heat generated from the heat source can be quickly radiated. Thus, it is possible to prevent the problem related to the temperature characteristics of the semiconductor chip from occurring (claim 1).
【００２４】また、発熱源直下のアイランド部の断面積
が放熱部材によって拡大されるので、これまた発熱源か
らの発熱を迅速に放熱でき、半導体チップの温度特性に
絡む問題が発生するのを防止できる（請求項２）。Further, since the cross-sectional area of the island portion immediately below the heat source is enlarged by the heat radiating member, the heat generated from the heat source can be quickly radiated, and the problem associated with the temperature characteristics of the semiconductor chip is prevented. (Claim 2).
【図１】本発明に係る半導体装置の第１の実施の形態を
示す平面図である。FIG. 1 is a plan view showing a first embodiment of a semiconductor device according to the present invention.
【図２】本発明に係る半導体装置の第２の実施の形態を
示す断面図で、図１のＡ−Ａ断面図である。FIG. 2 is a cross-sectional view showing a second embodiment of the semiconductor device according to the present invention, and is a cross-sectional view taken along line AA of FIG.
【図３】従来のカラー固体撮像装置の斜視図である。FIG. 3 is a perspective view of a conventional color solid-state imaging device.
【図４】従来のＣＣＤを有する半導体装置の断面図であ
る。FIG. 4 is a cross-sectional view of a conventional semiconductor device having a CCD.
２ アイランド部 ４ プラスチック型ＣＣＤ中空ＰＫＧ（半導体チップ） ２１ フラット部 ２２ 金属片（放熱部材） 2 Island part 4 Plastic type CCD hollow PKG (semiconductor chip) 21 Flat part 22 Metal piece (heat dissipation member)
Claims (3)
イランド部にフラット部を設けたことを特徴とする半導
体装置。1. A semiconductor device, wherein a flat portion is provided in an island portion immediately below a heat source localized in a semiconductor chip.
イランド部に放熱部材を突設したことを特徴とする半導
体装置。2. A semiconductor device wherein a heat radiating member protrudes from an island portion located immediately below a heat source localized in a semiconductor chip.
Ｄ中空ＰＫＧであり、前記発熱源は信号増幅用素子であ
ることを特徴とする請求項１または２に記載の半導体装
置。3. The semiconductor chip is a plastic type CC.
The semiconductor device according to claim 1, wherein the semiconductor device is a D hollow PKG, and the heat source is a signal amplification element.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02857699A JP3186729B2 (en) | 1999-02-05 | 1999-02-05 | Semiconductor device |
| TW89101811A TW449888B (en) | 1999-02-05 | 2000-02-02 | Lead frame used for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02857699A JP3186729B2 (en) | 1999-02-05 | 1999-02-05 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000228475A true JP2000228475A (en) | 2000-08-15 |
| JP3186729B2 JP3186729B2 (en) | 2001-07-11 |
Family
ID=12252442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02857699A Expired - Fee Related JP3186729B2 (en) | 1999-02-05 | 1999-02-05 | Semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3186729B2 (en) |
| TW (1) | TW449888B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303484A (en) * | 2005-03-25 | 2006-11-02 | Sumitomo Chemical Co Ltd | Solid-state imaging apparatus, case for containing solid-state imaging device and its production process |
| JP2007158184A (en) * | 2005-12-07 | 2007-06-21 | Fujifilm Corp | Solid photographing device |
| JP2008181951A (en) * | 2007-01-23 | 2008-08-07 | Nec Electronics Corp | Solid-state imaging apparatus |
| JP2009054678A (en) * | 2007-08-24 | 2009-03-12 | Mitsui Chemicals Inc | Hollow package, and semiconductor device |
| CN111326429A (en) * | 2020-03-06 | 2020-06-23 | 浙江工业职业技术学院 | Double-base-island heat dissipation chip packaging process |
-
1999
- 1999-02-05 JP JP02857699A patent/JP3186729B2/en not_active Expired - Fee Related
-
2000
- 2000-02-02 TW TW89101811A patent/TW449888B/en not_active IP Right Cessation
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303484A (en) * | 2005-03-25 | 2006-11-02 | Sumitomo Chemical Co Ltd | Solid-state imaging apparatus, case for containing solid-state imaging device and its production process |
| JP2007158184A (en) * | 2005-12-07 | 2007-06-21 | Fujifilm Corp | Solid photographing device |
| JP4708175B2 (en) * | 2005-12-07 | 2011-06-22 | 富士フイルム株式会社 | Solid-state imaging device |
| JP2008181951A (en) * | 2007-01-23 | 2008-08-07 | Nec Electronics Corp | Solid-state imaging apparatus |
| US8031244B2 (en) | 2007-01-23 | 2011-10-04 | Renesas Electronics Corporation | Device for releasing heat generated in the amplifier unit of a solid-state image sensing element |
| JP2009054678A (en) * | 2007-08-24 | 2009-03-12 | Mitsui Chemicals Inc | Hollow package, and semiconductor device |
| CN111326429A (en) * | 2020-03-06 | 2020-06-23 | 浙江工业职业技术学院 | Double-base-island heat dissipation chip packaging process |
| CN111326429B (en) * | 2020-03-06 | 2021-08-06 | 浙江工业职业技术学院 | Double-base-island heat dissipation chip packaging process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3186729B2 (en) | 2001-07-11 |
| TW449888B (en) | 2001-08-11 |
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