TW449888B - Lead frame used for semiconductor device - Google Patents

Lead frame used for semiconductor device Download PDF

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Publication number
TW449888B
TW449888B TW89101811A TW89101811A TW449888B TW 449888 B TW449888 B TW 449888B TW 89101811 A TW89101811 A TW 89101811A TW 89101811 A TW89101811 A TW 89101811A TW 449888 B TW449888 B TW 449888B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
lead frame
patent application
island
item
Prior art date
Application number
TW89101811A
Other languages
Chinese (zh)
Inventor
Toshio Osada
Hiroshi Narita
Original Assignee
Nippon Electric Co
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Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW449888B publication Critical patent/TW449888B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

There is provided a lead frame used for a semiconductor device, including an island portion having a flat portion on which the semiconductor is to be mounted, the island portion being comprised of a series of blanked portions, the flat portion constituting a part of the island portion and being comprised of a non-blanked portion. For instance, when the semiconductor device has an exothermic portion, the semiconductor device is mounted on the island portion such that the exothermic portion is located on the flat portion. Since the flat portion has a larger area than an area of the island portion, it would be possible to radiate heat radiated from the exothermic portion of the semiconductor device, through the flat portion, which would ensure prevent occurrence of problems concerning temperature characteristics of the semiconductor device.

Description

^ 4498 8 8 A7 ___ B7 五、發明說明(<) 發明背景 發明領域 本發明是有關於一種用於半導體裝置之導線架(丨e a d frame) ’及包括該導線架之半導體裝置,更特別地是有關 於一種用於具有塑膠C CD中空包裝之半導體裝置用的導 線架= 習用技術說明 +導體裝置大致包括發熱部(exothermic portion)。例 如,日本待審專利公報第6 1 - 2 2 2 3 8 4號所提出一種具有發 熱πΡ之衫色固態影像感測器<.c 0丨0 r s 〇 ] ί d - s t a t e i ni a g e s e n s o I’),及日本待審專利公樺第6 _2 8 3 6丨6號所提出一種 包括具有發熱部之固態感測器的半導體裝置。 第]圖是圖示日本待審專利公報第6 1 -222384號所提出 彩色固態影像感測器之透祝,。 所圖示彩色固態影像感測器包含:具有透明基板.之電 荷耦合裝置(CCD)lOl;安裝在CCD10]上之導線架Π2; 經由黏著劑.I 0 6固定在C C D 1 0〗上之玻璃濾光器1 〇 2 ;形 成在CCDI01上之電極113;.接合電極113到導線架112 之多個導線1 09 :及覆蓋在透明基板.之周邊及其部份導線 架Π 2的模塑樹脂1 1 9。 - 模塑樹塑1 1 9在透明基板上形成一開口 1 1 8 « 第2 A圖是日本待審專利公報第6 - 2 8 3 6 1 6號所提出半 導體裝置之縱向斷面圖示;而第2B圖是沿著第2A圖之 線11 B -11 B所取之橫向橫斷面圖示。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公芨) -----— — — — — — — *-------訂 — — — — — —--I . I (請先閱讀背面之注意事項再填窵本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 4988 8 A7 B7 五、發明說明(>) 半導體晶片202之諸如CCD區域感測器(area sensor) 安裝在基板2 2 1上。導線架2 24支架在基板2 2 1上,而 且經接合線來接合到半導體晶片202。塑膠蓋229包圍基 體2 2】,而且經黏著劑2 3 2來接合到基體2 2 ]。塑膠蓋22 9 內部形成具有凹部2 3 0 ’在其中封閉半導體晶片2 0 2。 上述半導體裝匱中之各CCD 10 i及2 0 2在其輸出部包括 信號放大元件。當CCD101及202在作業中時,信號放大 元件作用爲發熱元件。然而,信號放大元件所產生之熱 因爲下述原因而不能充份地散熱,所以造成有關溫度特 性之問題。 CCD101及202設計成中空和其功能有關係。CCD中所 封閉發散元件產生之熱,大致經內部中空空間內存在的 空氣及CCD所安裝的島形部來向外散熱。 然而,內部中空空間所存¥空氣具有小熱傳導性。此 外,爲了釋放C C D之熱累積(h e a t h i s .t 〇 r y)以連續梯形使 得金屬板脫料來形成薄的島形部(island)。結果,CCD中 所封閉發熱元件所產生之熱沒有充分坶向外散熱。 發明之槪沭 鑑於上述問題,本發明之目的在提供一種導線架,能 夠使得在半導體裝置中所封閉發熱元件產生的熱充分地 且迅速地散熱。 在本發明之一架構中,提供一種用於半導體裝置之導 線架’包括具有半導體裝置所要安裝之平坦部份的島形 部0 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐〉 ----^--------^--------訂------政 (請先閱讀背面之注意事項再填寫本頁) d 4988 8 A7 B7 五、發明說明(> 經濟部智慧財產局員工消費合作社印製 進一步提供一種用於半導體裝置之導線架,包括具有 半導體裝置所要安裝之平坦部份的島形部,該島形部是 由連續脫料部來構成,該平坦部構成島形部之一部份而 且由非脱料部聚構成。 進一步提供一種用於半導體裝置之導線架,包括(a)半 導體装置所要安裝之島形部,及(b)定位在島形部下之發 熱器。 本發明之另一架構中,提供一種包括上述導線架之半 導體装置。 下文中將說明上逑本發明所獲得之優點。 因為導線架之平坦部具有面積大於島形部之區域,所 以可經由平坦部來使得半導體裝置之發熱部所産生的熱 散熱,如此確保防止關於半導體裝置溫度特性之間題發 生。 附_之簡單說明 第1圖是習用彩色固態影像感測器之透視圖; c C D之 f用半導體裝|的横剖面圖; ^ 體装置的平面 画示;及 第4圖是根2 面圖示。 較佳賁施例之說明 [第一實施例] 第3圖圖示根據第一實施例之半導體裝置 2 A1^ 4498 8 8 A7 ___ B7 V. Description of the Invention (Field of the Invention) The present invention relates to a lead frame for semiconductor devices and a semiconductor device including the lead frame, and more particularly It relates to a lead frame for a semiconductor device having a plastic C CD hollow package = a conventional technical description + a conductor device generally including an exothermic portion. For example, Japanese Unexamined Patent Publication No. 6 1-2 2 2 3 8 4 proposes a shirt-color solid-state image sensor with a heating πP < .c 0 丨 0 rs 〇] d-statei ni agesenso I ' ), And Japanese Unexamined Patent Publication No. 6_2 8 3 6 丨 6 proposes a semiconductor device including a solid-state sensor having a heating portion. Figure] is a schematic illustration of a color solid-state image sensor proposed in Japanese Unexamined Patent Publication No. 6 1-222384. The illustrated color solid-state image sensor includes: a charge-coupled device (CCD) 101 having a transparent substrate; a lead frame Π2 mounted on the CCD10]; and a glass fixed on the CCD 10 through an adhesive agent I 0 6 Filter 1 02; electrode 113 formed on CCDI01; a plurality of wires 1 09 bonding electrode 113 to lead frame 112; and a molding resin covering the periphery of the transparent substrate and part of the lead frame Π 2 1 1 9. -Molded tree 1 1 9 forms an opening 1 1 8 on a transparent substrate «Figure 2 A is a longitudinal cross-sectional view of a semiconductor device proposed in Japanese Unexamined Patent Publication No. 6-2 8 3 6 1 6; Fig. 2B is a transverse cross-sectional view taken along the line 11 B-11 B of Fig. 2A. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 cm) -----— — — — — — — — — — — — — — — I. I (Please read the notes on the back before filling out this page) Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 4988 8 A7 B7 5. Description of the invention (>) Semiconductor wafers An area sensor such as CCD 202 is mounted on the substrate 2 2 1. The lead frame 2 24 is supported on the substrate 2 2 1 and is bonded to the semiconductor wafer 202 via a bonding wire. The plastic cover 229 surrounds the base 2 2], and is bonded to the base 2 2] through an adhesive 2 3 2. The plastic cover 22 9 is formed inside with a recess 2 3 0 ′ to seal the semiconductor wafer 2 2 2 therein. Each of the CCDs 10 i and 202 in the semiconductor device described above includes a signal amplifying element in its output portion. When the CCDs 101 and 202 are in operation, the signal amplifying element functions as a heating element. However, the heat generated by the signal amplifying element cannot sufficiently dissipate heat due to the following reasons, which causes a problem regarding temperature characteristics. CCD101 and 202 are designed to be hollow and related to their functions. The heat generated by the enclosed radiating element in the CCD is mainly radiated through the air existing in the internal hollow space and the island-shaped portion where the CCD is installed. However, the air stored in the internal hollow space has a small thermal conductivity. In addition, in order to release the heat accumulation of CCD (h a t h i s. T 0 r y), a continuous trapezoid was used to strip the metal plate to form a thin island. As a result, the heat generated by the enclosed heating element in the CCD is not sufficiently dissipated to the outside. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a lead frame capable of sufficiently and rapidly dissipating heat generated from a heating element enclosed in a semiconductor device. In one aspect of the present invention, a lead frame for a semiconductor device is provided, including an island-shaped portion having a flat portion to be mounted on the semiconductor device. Li> ---- ^ -------- ^ -------- Order ------ Politics (Please read the notes on the back before filling this page) d 4988 8 A7 B7 V. Description of the invention (> Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, further providing a lead frame for semiconductor devices, including an island-shaped portion having a flat portion to be mounted on the semiconductor device, the island-shaped portion is made of The flat part constitutes a part of the island-shaped part and is composed of a non-strip part. A lead frame for a semiconductor device is further provided, including (a) an island-shaped part to be mounted on the semiconductor device, And (b) a heater positioned under the island-shaped portion. In another aspect of the present invention, a semiconductor device including the above-mentioned lead frame is provided. The advantages obtained by the above-mentioned invention will be described below. Because of the flat portion of the lead frame Has an area larger than an island Area, so the heat generated by the heat generating part of the semiconductor device can be dissipated through the flat part, so as to prevent the problem about the temperature characteristics of the semiconductor device from occurring. Attached _ brief description The first picture is a conventional color solid-state image sensor A perspective view of c; a cross-sectional view of semiconductor device mounted on CD and f; a plane drawing of a body device; and FIG. 4 is a diagram showing two planes of the root. A description of a preferred embodiment [first embodiment] FIG. 3 illustrates a semiconductor device 2 A1 according to the first embodiment

發明第二實施例之半導體裝置的橫剖 本紙張尺度適用中國國家標準(CNS)A4规格(210 X 297公釐) I -----I --------— — — — — — ' <請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 44988 8 A7 B7 五、發明說明(4 ) 半導體裝置包括以銅板來衝壓、切割及整形所形成之 導線架1。導線架]設計具有銅板之連續脫料梯形部,界 定諸如塑膠CCD中空包裝之半導體晶片所要安裝鈞島形 部2 »導線架I在內導線3之間也具有平坦部2 1。平坦 部2 1是由銅板之非脫料部所構成。 半導體裝置之諸如塑膠CCD中空每.裝其以樹脂將其包 圍來固定而安裝在島形部2 1_。半導體裝置包括諸如用於 信號放大之元件的發熱部。半導體裝庫安裝在島形部 2 1 ’使得信號放大元件完全定位在平:迫部21內。爲此目 的·平坦部2 I設計是夠寬^來覆蓋其發熱部。 在根據第一實施例之半導體裝置中,定位在半導體裝 置中做爲熱產生器之信號放大元件所產生熱的經周圍空 氣 '恰定位在信號放大元件之下的乎坦部2.1.、樂導.體| 置- '之電極(未圖示)及(¾ g|5導線3.來敦熱。 如上述,因爲島形部2包括由銅板之非脫料部所構成 之平坦部2 1,平坦部2〗具有比島形部.2之其他部份較大 的熱容量’如此確保在島形部2中熱傳導性之增加。結 果’使得可自諸如熱產生器之信號放.大元件所產生的熱 散熱’確實避免半導體裝置έ熱問題。 島形部2是由具有高熱傳導性之材料構成。例如,島 形部2可由諸如具有熱傳導5 0 0 〇 X 1 〇 —卡/公分—秒_度 (cal/cm-sec-degree)之 EFTEC 64 或具有熱傳導 18 00χ lO'al/cm-sec-degree之KLF-4的金屬所構成,其兩者是 一種銅合金。 -----------"--------訂---I-----^ (請先閱讀背面之注咅^事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ 297公釐) 449888 A7 _B7_五、發明說明(Γ )[第二實施例]第4圖是根據第二實施例之半導體裝置的橫剖面圖。 所圖示半導體裝置構成包含具有島形部2之導線架1、 安裝在島形部2上之塑_CCD中空包裝4、固定塑膠CCD 中空包裝4在島形部2上且在塑膠CCD中空包裝上形成 凹部9之環氧樹脂5、覆蓋其凹部9之蓋8及做為散熱器 之向下延伸到島形部2的金屬板2 2。 環氧樹脂5形成在塑膠CCD中空包裝4之後倒,具有 細長之第一及第二開口 6及7,使得其一部份島形部2可 見。第一開口 6對齊島形部2,而第二開口 7對齊内部導 熱 7 地 及互 6 相 口 得 開使 二而 第因 及時 1 熱 第加 在線 置導 u H 插細 J 屬 示金 圖及 未線 ί 導 Ja 7J 携 剖 器内 熱當 加’ 内 第而 , 因 後 , 之化 線固 導時 部線 内外 到紫 合射 接照 已在 線其 導 , 細脂 屬樹 金滿 在填 0 口 起開 一二 在第 合 及 接一 封 密 之 置 裝 體 導 半 保 確 0 部 性形 導島 傳觸 熱接 低且 當下 相其 有在 具位 脂定 I 2 樹 2 之板 化屬 固金 時之 線器 外熱 紫散 射為 照做 其 , 當而 因 --1--- —--I I J I — — I ---—訂 ---------- (請先閱讀背面之注咅?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 以 可 熱 生 産 所 件 元 大 放 號 信 〇 , 澈 此散 如來 2 Ο 2 中板 脂屬 樹金 入及 埋2 ΙΪ 且 S 形 而 i 島 2,經 屬 金 地 性 代 替· 成 構 來 銀 或 。 銅成 由構 可來 2 0 2 鋪 板之 屬膏 金銀 , 層 如塗 例由 可 例 熱 中 實 D 生 二CC産 第膠所 述塑件 上在元 位大 锟熱 器散 Ξ if 生 二 t 做 熱 „ 而 中 散 , 包 大 加 定 得 使 來 其 經 而 放 號 信 如 諸 之 I格 規 4- )A s) N (c 準 標 家 國 國 中 用 適 度 尺 I張 紙 I* 公 97 A7 4 49 88 8 B7__ 五、發明說明U ) 第一及第二實施例可獨立地實施或一起實施。 符號說明 2…島形部 4…塑膠CCD中空包裝 5…環氧樹脂 ‘ 8…蓋 9…凹部 2卜‘·平坦部 22…金屬板 ]0 1…電荷耦合裝置(CCD) I 06…黏著劑 1 1 3…電極 1 18·..開口 Π 9…模塑樹脂 2 02…半導體晶片 22 9…塑膠蓋 23 0…凹部 C請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)The paper size of the cross-section of the semiconductor device according to the second embodiment of the invention is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I ----- I --------— — — — — — '≪ Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 44988 8 A7 B7 V. Description of the invention (4) The semiconductor device consists of stamping, cutting and shaping with copper plates The lead frame 1. Lead frame] A continuous strip-shaped trapezoidal part with a copper plate is designed to define the island-shaped part 2 to be mounted on a semiconductor wafer such as a plastic CCD hollow package »The lead frame I also has a flat part 21 between the inner leads 3. The flat portion 21 is composed of a non-striping portion of a copper plate. Semiconductor devices such as plastic CCDs are hollow. They are mounted with resin and fixed around them and mounted on the island 2 1_. The semiconductor device includes a heat generating portion such as an element for signal amplification. The semiconductor storage is mounted on the island-shaped portion 2 1 ′ so that the signal amplifying element is completely positioned in the flat portion 21. For this purpose, the flat portion 2 I is designed to be wide enough to cover its heating portion. In the semiconductor device according to the first embodiment, the heat generated by the signal amplification element positioned as a heat generator in the semiconductor device via the surrounding air is positioned almost below the signal amplification element. 2.1. . 体 | Set- 'electrode (not shown) and (¾ g | 5 wire 3. to heat. As mentioned above, because the island-shaped portion 2 includes a flat portion 21 made of a non-striping portion of a copper plate, The flat portion 2 has a larger heat capacity than the other portions of the island-shaped portion .2 'so as to ensure an increase in the thermal conductivity in the island-shaped portion 2. As a result, it is possible to dissipate from a signal such as a heat generator. Thermal dissipation does indeed prevent the semiconductor device from overheating. The island-shaped portion 2 is made of a material having high thermal conductivity. For example, the island-shaped portion 2 may be made of, for example, a material having a thermal conductivity of 5 0 0 × X 1 0—cal / cm—second_degree (cal / cm-sec-degree) of EFTEC 64 or KLF-4 metal with thermal conductivity of 18 00χ l''al / cm-sec-degree, both of which are copper alloys. ------- ---- " -------- Order --- I ----- ^ (Please read the notes on the back ^^ before filling out this page) Degree Applicable to China National Standard (CNS) A4 specification (21〇χ 297 mm) 449888 A7 _B7_ V. Description of Invention (Γ) [Second Embodiment] FIG. 4 is a cross section of a semiconductor device according to the second embodiment The illustrated semiconductor device structure includes a lead frame having an island-shaped portion 2, a plastic_CCD hollow package 4 mounted on the island-shaped portion 2, and a fixed plastic CCD hollow package 4 on the island-shaped portion 2 and on a plastic CCD. The epoxy resin 5 forming the recess 9 on the hollow package, the cover 8 covering the recess 9 and the metal plate 2 2 as a heat sink extending downward to the island 2 2. The epoxy resin 5 is formed in a plastic CCD hollow package 4 Afterwards, it has elongated first and second openings 6 and 7 so that part of the island-shaped portion 2 is visible. The first opening 6 is aligned with the island-shaped portion 2 and the second opening 7 is aligned with the internal heat conduction 7 ground and each other 6 The conversation can be opened to make the second and the first due to the timely installation of the first hot line u H inserted fine J belongs to the gold map and the unlined guide Ja 7J The internal heat of the profiler should be added to the internal, and later, the When the wire is fixed, the photos from the inside and outside of the line to the purple shot have been guided by the wire. Fill in 0 mouths, open one or two in the first and the next dense installation guide, half-guaranteed, 0, the shape of the island is low, and the current contact is low, and it has a plate of I 2 and a tree 2 When the metal is fixed to gold, the thermal purple scattering outside the wire device is taken as the basis, and because of --- 1 --- --- IIJI--I ----- order ---------- (please Read the note on the back? Please fill in this page for further information.) The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the letter of the large-scale production of the thermally-produced product, which is as follows: 2 〇 2 The i island 2 is replaced by gold or silver. The copper layer is made of copper and can be plated as a paste of gold and silver. The layer is coated as described in the example. The heat is dissipated on the plastic parts described in the CC product. The heat… and the medium, Bao Dajia decided to give it the letter I like the rules 4-) A s) N (c quasi-standard home country with a moderate ruler I sheet of paper I * public 97 A7 4 49 88 8 B7__ 5. Description of the invention U) The first and second embodiments can be implemented independently or together. Symbol description 2 ... Island-shaped portion 4 ... Plastic CCD hollow package 5 ... Epoxy resin '8 ... Cover 9 ... Concave part 2 · 'Flat part 22 ... Metal plate] 0 1 ... Charge coupled device (CCD) I 06 ... Adhesive 1 1 3 ... Electrode 1 18 ... Opening Π 9 ... Molding resin 2 02 ... Semiconductor wafer 22 9 … Plastic cover 23 0… Recessed section C Please read the notes on the back before filling out this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized for the Chinese National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

4 4988 8 第δ91〇1811號「半導體元件用之導線架_」_專-利一案 六申諝專利範圍: (90年6月1日修正) 1 . 一種半導體裝置用之導線架,其特徵爲其包含—島形 部其具有平坦部,在其上安裝該半_體裝置。 2 .如申請專利範圍第丨項之導線架,其中該半導體裝置 具有發熱部,而且其中該半導體裝置安裝在該島形部, 使得該發熱部定位在該平坦部上。 3 .如申請專利範圍第2項之導線架,其中該平坦部足夠 寬大來覆蓋該發熱部。 4. 如申請專利範圍第2項之導線架,其中該半導體裝置 是塑膠CCD中空包裝’而且該發熱部是由信號放大器 所構成。 5. —種半導體裝置用之導線架,其特徵爲其包含具有該 半導體所要安裝之平坦部的島形部; 該島形部是由連續脫料部所構成, 該平坦部構成該島形部之一部份,而且由非脫料部所 構成。 6·如申請專利範圍第5項之導線架,其中該半導體裝置 具有發熱部’而且其中該半導體安裝在該島形部上,使 得該發熱部定位在該平坦部上。 7 .如申請專利範圍第6項之·導線架’其中該平坦部足夠 寬廣來覆蓋該發熱部。 8 .如申請專利範圍第6項之導線架’其中該半導體裝置 是塑膠CCD中空包裝,而且該發熱部是由信號放大器 所構成。 9.—種半導體裝置用之導線架,其特徵爲包含: 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂---------線r 經濟部智慧財產局員工消費合作社印製 4 4988 8 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印制衣 六、申請專利範圍 (a)島形部’該半導體安裝在其上; (b )散熱器,定位在該島形部之下。 1 〇 如申請專利範圍第9項之導線架,其中該散熱器向下 延伸。 1 I .如申請專利範圍第9項之導線架,其中該半導體裝置 具有發熱部’其位於該島形部上》 】2 .如申請專利範圍第9項之導線架,其中該散熱器由金 屬所構成。 1 3 .如申請專利範圍第1 2項之導線架,其中該金屬是銅。 1 4.如申請專利範圍第I 2項之導線架,其中該散熱器塗 層具有比較該金屬更高熱傳導性之金屬膏。 1 5 .如申請專利範圍第1 4項之導線架,其中該金屬膏是 由銀所構成。 1 6 如申請專利範圍第9項之導線架,.其中該半導體裝置 是塑膠CCD中空包裝,而且該發熱部是由信號放大器 所構成。 1 7. —種包括導線架之半導體裝置,其特徵爲該導線架具 有該半導體所要安裝之平坦部的島形部。 】8 .如申請專利範圍第丨7項之半導體裝置,其中該半導體裝置 具有發熱部’而且該半導體裝置安裝在該島形部上,使 得該發熱部定位在該平坦部上。 +, 】9 .如申&專利軔圍第1 8項之半導體.裝置,其中該平坦 部足夠寬廣來覆蓋該發熱部》 2 0 .如申請專利範圍第1 8項之半導體.裝置,其中該半導 本紙張尺度過用中國國家標準(CNS)A4規格(210 X 297公釐) I----^---------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 4 49 88 8 A8 B8 C8 D8 , 六、申請專利範圍 體裝置是塑膠CCD中空包裝,而且該發熱部是由信號 放大器所構成。 2 1 —種包括導線架之半導體裝置,其特徵爲包含: 該導線架包括具有該半導體所要安裝之平坦部的島形 部;_ ' 該島形部是由連續脫料部所構成; 該平坦部構成該島形部之一部份,而且由非脫料部所 構成。 2 2.如申請專利範圍第2 1項之半導體裝置,其中該半導 體裝置具有發熱部’而且其中該半導體裝置安裝在該島 形部上,使得該發熱部定位在該平坦部上》 2 3 .如申請專利範圍第2 2項之半導體裝置,其中該平坦 部足夠寬廣來覆蓋該發熱俞》 2 4 .如申請專利範圍第2 2項之半導體裝置,其中該半導 體裝置是塑膠CCD中空包裝,而且該發熱部是由信號 放大器所構成。 25. —種具有導線架之半導體裝置,其特徵爲該導線架包 含: (Ο島形部,在其上安裝該半導體裝置|及 (b)散熱器,定位在該島形部之下。 2 6 .如申請專利範圍第2 5項之半導體裝置 > 其中該發散 器向下延伸。 2 7.如申請專利範圍第25項之半導體裝置,其中該半導 體裝置具有發熱部,而且其中該半導體裝置安裝在該島 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------I I --------訂--—I-----線 <請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Λ Λ λ Α8 44988 8 g D8 六、申請專利範圍 ‘ 形部上,使得該發熱部定位在該平坦部。 2 8 .如申請專利範圍第2 5項之半導體裝置,其中該散熱 器是由金屬所構成/ 29 .如申請專利範圍第2 8項之半導體裝置,其中該金屬 是銅。 .3 0 .如申請專利範圍第2 8項之半導體裝置,其中該散熱 器塗層具有比較該金屬更高熱傳導性之金屬膏。 31.如申請專利範圍第30項之半導體裝置,其中該金屬 膏是由銀所構成。 3 2 .如申請專利範圍第2 5項之半導體裝置,其中該半導 體裝置是塑膠CCD中空包裝,而且該發熱部是由信號 放大器所構成。 -------------裝--------訂·!------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用_國國家標準(CNS)A4規格(210 X 297公釐)4 4988 8 No. δ91〇1811 "lead frame for semiconductor devices_" _ Patent-Lee case patent application scope: (Amended June 1, 1990) 1. A lead frame for semiconductor devices, its characteristics For its inclusion-the island-shaped portion has a flat portion on which the half-body device is mounted. 2. The lead frame according to the scope of claim 1, wherein the semiconductor device has a heat generating portion, and wherein the semiconductor device is mounted on the island portion so that the heat generating portion is positioned on the flat portion. 3. The lead frame according to item 2 of the patent application scope, wherein the flat portion is wide enough to cover the heating portion. 4. For the leadframe of item 2 of the scope of patent application, wherein the semiconductor device is a plastic CCD hollow package 'and the heating portion is constituted by a signal amplifier. 5. A lead frame for a semiconductor device, characterized in that it comprises an island-shaped portion having a flat portion to be mounted on the semiconductor; the island-shaped portion is composed of a continuous stripping portion, and the flat portion constitutes the island-shaped portion It is a part and is composed of a non-removing part. 6. The lead frame according to item 5 of the scope of patent application, wherein the semiconductor device has a heat generating portion 'and wherein the semiconductor is mounted on the island portion so that the heat generating portion is positioned on the flat portion. 7. The lead frame according to item 6 of the patent application, wherein the flat portion is wide enough to cover the heating portion. 8. The lead frame according to item 6 of the patent application scope, wherein the semiconductor device is a plastic CCD hollow package, and the heating portion is composed of a signal amplifier. 9.—A lead frame for semiconductor devices, which is characterized by: This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Order- -------- Line r Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 4988 8 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 6. Scope of Patent Application (a) Island Department ' The semiconductor is mounted thereon; (b) a heat sink is positioned below the island portion. 1 〇 The lead frame of item 9 of the patent application scope, wherein the heat sink extends downward. 1 I. If the lead frame of item 9 of the patent application scope, wherein the semiconductor device has a heating portion 'which is located on the island-shaped portion "] 2. If the lead frame of item 9 of the patent application scope, wherein the heat sink is made of metal Made up. 1 3. The lead frame according to item 12 of the patent application scope, wherein the metal is copper. 1 4. The lead frame of item I 2 of the scope of patent application, wherein the heat sink coating has a metal paste with higher thermal conductivity than the metal. 15. The lead frame according to item 14 of the scope of patent application, wherein the metal paste is composed of silver. 16 If the lead frame of item 9 of the scope of patent application, the semiconductor device is a plastic CCD hollow package, and the heating part is composed of a signal amplifier. 1 7. A semiconductor device including a lead frame characterized in that the lead frame has an island portion of a flat portion to which the semiconductor is to be mounted. [8] The semiconductor device according to item 7 of the patent application scope, wherein the semiconductor device has a heat generating portion 'and the semiconductor device is mounted on the island portion so that the heat generating portion is positioned on the flat portion. +,】 9. Rushen & Patent No. 18 semiconductor device. The flat part is wide enough to cover the heating part "2 0. Such as the semiconductor device for patent application No. 18 device, where The paper size of this semi-conductor is over the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I ---- ^ --------- installation -------- order-- ------- line (please read the precautions on the back before filling this page) 4 49 88 8 A8 B8 C8 D8, VI. Patent application body device is plastic CCD hollow package, and the heating part is signal Constituted by an amplifier. 21 — A semiconductor device including a lead frame, comprising: the lead frame includes an island-shaped portion having a flat portion to which the semiconductor is to be mounted; _ 'the island-shaped portion is formed by a continuous stripping portion; the flat portion The part constitutes a part of the island-shaped part, and is composed of a non-removing part. 2 2. The semiconductor device according to item 21 of the scope of patent application, wherein the semiconductor device has a heat generating portion, and wherein the semiconductor device is mounted on the island portion so that the heat generating portion is positioned on the flat portion. 2 3. For example, the semiconductor device with the scope of patent application No. 22, wherein the flat portion is wide enough to cover the heating device. 2 4. The semiconductor device with the scope of patent application No. 22, where the semiconductor device is a plastic CCD hollow package, and The heating portion is composed of a signal amplifier. 25. A semiconductor device having a lead frame, characterized in that the lead frame includes: (0 island-shaped portion, on which the semiconductor device is mounted | and (b) a heat sink, positioned below the island-shaped portion. 2 6. The semiconductor device according to item 25 of the patent application > wherein the diffuser extends downward. 2 7. The semiconductor device according to item 25 of the patent application, wherein the semiconductor device has a heat generating portion, and wherein the semiconductor device The paper size installed on the island applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------- II -------- Order --- I --- --Line < Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ Λ λ Α8 44988 8 g D8 In this flat part. 28. The semiconductor device according to item 25 of the patent application, wherein the heat sink is made of metal / 29. The semiconductor device according to item 28, wherein the metal is copper. .3 0. The semiconductor device of claim 28, wherein the heat sink coating has a metal paste having a higher thermal conductivity than the metal. 31. The semiconductor device according to claim 30, wherein the metal paste is made of silver. 32. The semiconductor device according to item 25 of the patent application range, wherein the semiconductor device is a plastic CCD hollow package, and the heating portion is composed of a signal amplifier. ------------- Install -------- Order! ------ Line (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is applicable to the national standard (CNS) A4 (210 X 297 mm)
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JP2008181951A (en) 2007-01-23 2008-08-07 Nec Electronics Corp Solid-state imaging apparatus
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