JP5110575B2 - Hollow package and semiconductor device - Google Patents
Hollow package and semiconductor device Download PDFInfo
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- JP5110575B2 JP5110575B2 JP2007218092A JP2007218092A JP5110575B2 JP 5110575 B2 JP5110575 B2 JP 5110575B2 JP 2007218092 A JP2007218092 A JP 2007218092A JP 2007218092 A JP2007218092 A JP 2007218092A JP 5110575 B2 JP5110575 B2 JP 5110575B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
本発明は、固体撮像素子等の半導体素子からの発熱による温度上昇の低下を図ると同時に反射光の発生を抑えた樹脂製中空パッケージに関するものである。 The present invention relates to a resin-made hollow package in which a rise in temperature due to heat generated from a semiconductor element such as a solid-state imaging element is reduced and generation of reflected light is suppressed.
近年、２次元及び１次元のＣＣＤ及びＣＭＯＳ等の固体撮像素子収納用パッケージは樹脂製の中空パッケージが主流となっている。その構造は中空部にインナーリードを有し、当該リードは樹脂内部を通ってパッケージ外側に延出しアウターリードを構成している。その中空パッケージの中空部（底部の）内表面であるダイアタッチ面に固体撮像素子がダイボンド剤にて接着され、その後、中空パッケージ内に露出したインナーリードと半導体素子の接続端子間とがＡｕ線にてワイヤーボンディングにて接続され導通される。その後、中空パッケージの上側の表面に接着剤が塗付され光透過性の透明ガラス、透明樹脂等でシールされる。 2. Description of the Related Art Recently, resin-made hollow packages have become the mainstream for two-dimensional and one-dimensional CCD and CMOS solid-state image sensor housing packages. The structure has an inner lead in the hollow portion, and the lead extends to the outside of the package through the inside of the resin to constitute an outer lead. A solid-state imaging device is bonded to the die attach surface, which is the inner surface of the hollow portion (bottom) of the hollow package, with a die bond agent, and then the Au wire between the exposed inner lead and the connection terminal of the semiconductor device is Au wire. And connected by wire bonding. Thereafter, an adhesive is applied to the upper surface of the hollow package and sealed with a light transmissive transparent glass, transparent resin or the like.
２次元、及び１次元のＣＣＤ、ＣＭＯＳ等の固体撮像素子の様に光を受光する素子の場合は中空部内の水分の露点を低く抑える必要がある。透明ガラス、透明樹脂等に結露が発生すると光が遮断され固体撮像素子に正しい情報が伝えられなくなるためである。これを解消する為、中空部内表面に金属板を露出させることにより水分が中空部へ透過するのを阻止させたり（例えば、特許文献１参照）、中空部底部の樹脂部に少なくとも半導体素子より大きな金属板を挿入させることにより中空部（底部の）外表面からの水分の透過を阻止させたりして（例えば、特許文献２参照）、耐湿性および放熱性を向上させている。 In the case of an element that receives light such as a two-dimensional or one-dimensional CCD, CMOS, or the like, it is necessary to keep the dew point of moisture in the hollow portion low. This is because when condensation occurs on transparent glass, transparent resin or the like, light is blocked and correct information cannot be transmitted to the solid-state imaging device. In order to solve this problem, the metal plate is exposed on the inner surface of the hollow portion to prevent moisture from permeating into the hollow portion (see, for example, Patent Document 1), or the resin portion at the bottom of the hollow portion is at least larger than the semiconductor element. By inserting a metal plate, moisture permeation from the outer surface of the hollow portion (bottom portion) is prevented (for example, see Patent Document 2), thereby improving moisture resistance and heat dissipation.
更に１次元のＣＣＤ、ＣＭＯＳ等の固体撮像素子の場合、近年小型、多画素、高速化になってきている。特に高速複写用途には動作周波数を上げるため素子端部の接続端子領域内にある信号増幅部での発熱量が大きくなり、長尺状のチップ両端で温度差が発生することにより素子の特性不良が発生しやすくなって来ている。その対策として波線状のアイランドに並行して配列された接続部を設け、その接続部と外部リードとを接続させて放熱をさせている（例えば、特許文献３参照）。しかしながら、当該発明の方法では、半導体素子と外部リードとの接続箇所だけでは接続点数と接続部の断面積が小さいため熱の流れが制限され、半導体素子の発熱量を高速で充分に移動させることができない虞がある。又、アイランドが波状のため中空部外表面からの水分の透過を阻止するには不十分である。 Furthermore, in the case of a solid-state imaging device such as a one-dimensional CCD or CMOS, in recent years, it has become smaller, more pixels, and faster. Especially in high-speed copying applications, the operating frequency is increased, so the amount of heat generated in the signal amplification section in the connection terminal area at the end of the element increases, causing temperature differences at both ends of the long chip, resulting in poor device characteristics. Is becoming more likely to occur. As a countermeasure, connecting portions arranged in parallel with wavy islands are provided, and the connecting portions are connected to external leads to dissipate heat (see, for example, Patent Document 3). However, in the method of the present invention, the number of connection points and the cross-sectional area of the connection part are small only at the connection point between the semiconductor element and the external lead, so that the heat flow is limited, and the heat generation amount of the semiconductor element is sufficiently moved at high speed. There is a possibility of not being able to. Further, since the island is corrugated, it is insufficient to prevent moisture from permeating from the outer surface of the hollow portion.
又、中空部内表面に矩形のアイランドを有し、該アイランドが長手方向に垂直な突出部を有し、その突出部の一部が中空パッケージに埋設させた構造にて放熱をさせている（例えば、特許文献４参照）。本方法にて放熱性、耐湿性能は良くなるものの、中空部内表面全面に金属製のアイランドが露出されていることから、中空部に入った光がアイランドに反射し再び撮像素子に入りノイズが発生し易くなる。一般的には中空パッケージのリードは素子の接続端子間とワイヤーボンディングで導通させるため、金メッキされることから当該アイランド部も金メッキされ上記現象は更に促進されることとなる。 In addition, a rectangular island is provided on the inner surface of the hollow portion, the island has a protrusion perpendicular to the longitudinal direction, and heat is radiated by a structure in which a part of the protrusion is embedded in the hollow package (for example, , See Patent Document 4). Although this method improves heat dissipation and moisture resistance, a metal island is exposed on the entire inner surface of the hollow part, so light entering the hollow part reflects off the island and enters the image sensor again, generating noise. It becomes easy to do. In general, since the lead of the hollow package is electrically connected to the connection terminals of the element by wire bonding, the island portion is also gold-plated since the gold-plating, and the above phenomenon is further promoted.
又、中空部内表面に露出するアイランド形状を連続した蛇行する形状にし、かつ素子の片側の接続端子領域内にある発熱源となる信号増幅部相当箇所のみフラット部を設けて放熱性を向上させている（例えば、特許文献５参照）。本方法にて放熱性は良くなるが、中空部に入った光が蛇行部で一部反射すること、内表面を覆うアイランドの総面積が少なくなることから耐湿性が低下する。 In addition, the island shape exposed on the inner surface of the hollow portion is made to continuously meander, and the flat portion is provided only at the signal amplification portion corresponding to the heat generation source in the connection terminal region on one side of the element to improve heat dissipation. (For example, see Patent Document 5). Although the heat dissipation is improved by this method, the moisture resistance is lowered because the light entering the hollow part is partially reflected by the meandering part and the total area of the island covering the inner surface is reduced.
本発明は、固体撮像素子を中空パッケージに収納した際に発生するチップ温度上昇を低く抑えると同時に反射光発生の抑制を図り、かつ中空部の露点を低く抑えることを課題とする。 It is an object of the present invention to suppress a rise in chip temperature that occurs when a solid-state imaging device is housed in a hollow package, and to suppress the generation of reflected light and to keep the dew point of the hollow portion low.
本発明は、固体撮像素子収納用の中空パッケージ入る光の反射光の発生を抑止し、かつ、放熱性、耐湿性能を向上させるために、以下の発明をした。
『（１）固体撮像素子搭載用の中空パッケージの中空部底部にアイランドが埋設され、当該アイランドの中、接続端子領域と接する部分およびその近傍を中空部底部の内表面に露出させ、アイランドの他の部分は屈曲させて中空パッケージの中空部底部に埋設するか、中空部底部の外表面に露出させるかしてなることを特徴とする中空パッケージ。
（２）中空パッケージの中空部底部の内表面に固体撮像素子を搭載し、当該素子の接続端子とリード間を導通させ、中空パッケージの上面を透明蓋で封止してなるものとした、請求項１記載の半導体装置。』
The present invention has the following inventions in order to suppress generation of reflected light of light entering a hollow package for housing a solid-state imaging device and to improve heat dissipation and moisture resistance.
“(1) An island is embedded in the bottom of the hollow portion of the hollow package for mounting the solid-state imaging device, and the portion of the island that contacts the connection terminal region and its vicinity are exposed on the inner surface of the bottom of the hollow portion. The hollow package is characterized by being bent and embedded in the bottom of the hollow part of the hollow package or exposed on the outer surface of the bottom of the hollow part .
(2) a solid-state image sensor mounted on the inner surface of the hollow portion bottom of the hollow package is conduction between the connection terminals and the leads of the element was assumed that the upper surface of the hollow package formed by sealing with a transparent lid, wherein Item 14. A semiconductor device according to Item 1 . ]
本発明の中空パッケージは、固体撮像素子の接続端子領域内にある発熱源の熱を効率良く放熱させるために、アイランドのうち、接続端子領域と接する部分及びその近傍を中空部底部の内表面に露出させ、アイランドの他の部分は屈曲させて中空パッケージの中空部底部に埋設、乃至、中空部底部の外表面に露出させるものである。特に、一次元の固体撮像素子の様に両端部の接続端子領域内の片側、乃至両側にある発熱源となる信号増幅部の熱を効率良く放熱させるために、アイランドのうち当該接続端子領域と接する部分及びその近傍を中空部底部の内表面に露出させ、アイランドの他の部分は屈曲させて中空パッケージの中空部底部の樹脂部に埋設、乃至、中空部外表面に露出させるものである。本アイランド構造をとることにより中空部底部の内表面に搭載された１次元固体撮像素子の中央部にある画素領域及びその近傍には金属製アイランドが露出しないこととなるので、中空部に入った光が金属製アイランドで反射することが抑制される。又中空部底部の成形体又は中空部底部の外表面のいずれかにアイランドが存在することにより中空部底部の外表面からの水分の透過を阻止することができる。 In the hollow package of the present invention, in order to efficiently dissipate the heat of the heat generation source in the connection terminal region of the solid-state image sensor, the portion of the island that contacts the connection terminal region and its vicinity are on the inner surface of the bottom of the hollow portion. The other part of the island is exposed and bent so as to be embedded in the bottom of the hollow part of the hollow package or exposed on the outer surface of the bottom of the hollow part. In particular, in order to efficiently dissipate the heat of the signal amplifying unit serving as a heat source on one side or both sides of the connection terminal region at both ends as in a one-dimensional solid-state imaging device, the connection terminal region of the island The contacting part and its vicinity are exposed on the inner surface of the hollow part bottom part, and the other part of the island is bent and embedded in the resin part of the hollow part bottom part of the hollow package or exposed on the outer surface of the hollow part. By taking this island structure, a metal island is not exposed in the pixel region in the central portion of the one-dimensional solid-state imaging device mounted on the inner surface of the bottom portion of the hollow portion and in the vicinity thereof, so that it entered the hollow portion. Reflection of light at the metal island is suppressed. Further, the presence of an island on either the molded body at the bottom of the hollow part or the outer surface of the bottom of the hollow part can prevent moisture from permeating from the outer surface of the bottom of the hollow part.
以下、本発明について詳細に説明する。
中空パッケージは、リードフレームとそれを支える成形体からなり、通常、半導体素子を搭載する中空パッケージを凹型にして中空部を設けた形状である。半導体素子を搭載する場合は、当該中空パッケージの中空部底部の内表面に半導体素子を固着し、当該半導体素子の接続端子とインナーリードとをボンディングワイヤーとで接続し、最後に中空パッケージの中空上面を蓋材で気密封止する。
Hereinafter, the present invention will be described in detail.
The hollow package is composed of a lead frame and a molded body that supports the lead frame, and generally has a shape in which the hollow package on which the semiconductor element is mounted is concave and provided with a hollow portion. When mounting a semiconductor element, the semiconductor element is fixed to the inner surface of the bottom of the hollow portion of the hollow package, the connection terminal of the semiconductor element and the inner lead are connected by a bonding wire, and finally the hollow upper surface of the hollow package Is hermetically sealed with a lid.
（アイランド）
本発明の中空パッケージは、アイランドが、搭載する固体撮像素子の接続端子領域と接する部分で、中空部底部の内表面に露出してなる。接続端子領域とは、固体撮像素子のうち、当該素子と中空パッケージのインナーリードとをボンディングワイヤーで接続させた部分及びその周辺をいい、当該接続領域内には、画素部からの伝達された信号が増幅される信号増幅部があることにより、発熱し、接続端子領域が熱せられる。そこで、発生した熱を放熱するために、本願では、接続端子領域と接する部分でアイランドを中空部底部の内表面に露出させる。アイランドは、接続端子領域と接する部分及びその近傍が露出されていても良い。アイランドの中空部底部の内表面に露出していない他部は屈曲後、中空部底部の成形体に埋設、乃中空部底部の外表面に露出させる。画素領域とは、素子のうち、外部からの光を取り込んで電気信号に変換する部分をいう。一次元固体撮像素子では、通常、素子の長尺方向の両端部にある接続端子領域のうち、片端部又は両端部に信号増幅部があり、中間に画素領域がある。二次元固体撮像素子も、通常、素子の両端部に接続端子領域がありその中間部に画素領域が存在する。そして、信号増幅部は片側乃至両側の接続端子領域内に存在する。
(Island)
In the hollow package of the present invention, the island is exposed to the inner surface of the bottom of the hollow portion at a portion in contact with the connection terminal region of the solid-state imaging device to be mounted. The connection terminal region refers to a portion of the solid-state imaging device where the device and the inner lead of the hollow package are connected by a bonding wire and its periphery, and the signal transmitted from the pixel unit is included in the connection region. As a result, there is a signal amplifying unit that amplifies the heat, and heat is generated, and the connection terminal region is heated. Therefore, in order to dissipate the generated heat, in the present application, the island is exposed on the inner surface of the bottom of the hollow portion at a portion in contact with the connection terminal region. The island may be exposed at a portion in contact with the connection terminal region and its vicinity. The other part that is not exposed on the inner surface of the bottom of the hollow part of the island is bent and then embedded in the molded body of the bottom of the hollow part and exposed on the outer surface of the bottom of the hollow part. The pixel region refers to a portion of the element that takes in light from the outside and converts it into an electrical signal. In a one-dimensional solid-state imaging device, a signal amplifying unit is usually provided at one or both ends of the connection terminal regions at both ends in the longitudinal direction of the device, and a pixel region is provided in the middle. A two-dimensional solid-state image pickup device usually has a connection terminal region at both ends of the device and a pixel region at an intermediate portion thereof. The signal amplification unit exists in the connection terminal region on one side or both sides.
本発明に係わるアイランドは、中空パッケージの中空部への水分の浸入を防止できるものであればよく、蒸気不透過性の板状体が用いられる。このようなアイランドを設けることで中空パッケージの防湿性を向上する。また、本発明に係わるアイランドの材質は、通常は金属製であり、例えば、銅、鉄、アルミニウム又はこれらの合金からなる群より選ばれたもの、特に銅合金、又は４２アロイで形成されることが望ましい。 The island according to the present invention may be any island that can prevent moisture from entering the hollow portion of the hollow package, and a vapor-impermeable plate-like body is used. Providing such an island improves the moisture resistance of the hollow package. Further, the material of the island according to the present invention is usually made of metal, for example, one selected from the group consisting of copper, iron, aluminum or alloys thereof, particularly copper alloy, or 42 alloy. Is desirable.
中空部底部の内表面にあるアイランドの大きさは、目的及び用途に応じて種々選択できる。２次元固体撮像素子の場合、少なくとも素子の縦幅以上で中空パッケージの外側稜線までの縦幅以下、横幅は素子中央部にある画素領域の端部を一部含んだ領域からインナーリードの棚段以下の長さが良い。更には素子中央部にある画素領域と素子の接続端子領域との境界領域近傍からインナーリード棚段以下の長さを有しているのが好ましい。又、屈曲後中空部底部の成形体に埋設、または中空部底部の外表面に露出した部分のアイランドの縦幅は、中空部底部の内表面に露出した縦幅と同じか、又はそれ以上が好ましいが、それ以下であっても良い。 The size of the island on the inner surface of the bottom of the hollow portion can be variously selected according to the purpose and application. In the case of a two-dimensional solid-state imaging device, at least the vertical width of the device and not more than the vertical width to the outer edge of the hollow package, and the horizontal width from the region including a part of the pixel region at the center of the device to the inner lead shelf The following length is good. Furthermore, it is preferable that the length is equal to or shorter than the inner lead shelf level from the vicinity of the boundary region between the pixel region in the center of the device and the connection terminal region of the device. In addition, the vertical width of the island of the portion embedded in the molded body at the bottom of the hollow part after bending or exposed on the outer surface of the bottom of the hollow part is equal to or greater than the vertical width exposed on the inner surface of the bottom of the hollow part. Although it is preferable, it may be less.
１次元撮像素子の場合、中空部底部の内表面にあるアイランドの大きさは、少なくとも素子の縦幅（短辺幅）以上でインナーリード棚段以下、横幅（長辺幅）は素子中央部にある画素領域の端部を一部含んだ領域から中空パッケージ外稜線までの横幅の長さ以下が良い。更には素子中央部にある画素領域と素子の接続端子領域との境界領域近傍から中空パッケージ外稜線までの横幅以下の長さを有しているのが好ましい。又、屈曲後中空部底部の成形体に埋設、または中空部底部の外表面に露出した部分のアイランドの縦幅は、中空部底部の内表面に露出した縦幅と同じか、又はそれ以上が好ましいが、それ以下であっても良い。本アイランド構造により、接続端子領域内にある信号増幅部から発生した熱が中空部底部の内表面に露出したアイランドから中空部底部の成形体に埋設されたアイランドを通して中空部外表面へと放熱される。同時に、素子の中間部にある画素領域近傍にはアイランドが露出しないので中空部に入った光のアイランドでの反射が抑えられることとなり、誤作動を防止することができる。
又中空部底部の樹脂部内に金属層があることから中空部への水分の透湿を防止できるので耐湿性能を有することができる。
In the case of a one-dimensional image sensor, the size of the island on the inner surface of the bottom of the hollow part is at least the vertical width (short side width) of the element and below the inner lead shelf, and the horizontal width (long side width) is at the center of the element It is preferable that the width is equal to or less than the width from the region partially including the end portion of a certain pixel region to the outer edge of the hollow package. Further, it preferably has a length equal to or less than the lateral width from the vicinity of the boundary region between the pixel region in the center of the device and the connection terminal region of the device to the outer edge of the hollow package. In addition, the vertical width of the island of the portion embedded in the molded body at the bottom of the hollow part after bending or exposed on the outer surface of the bottom of the hollow part is equal to or greater than the vertical width exposed on the inner surface of the bottom of the hollow part. Although it is preferable, it may be less. With this island structure, heat generated from the signal amplifier in the connection terminal area is dissipated from the island exposed on the inner surface of the bottom of the hollow to the outer surface of the hollow through the island embedded in the molded body at the bottom of the hollow. The At the same time, since no island is exposed in the vicinity of the pixel region in the middle portion of the element, reflection of light entering the hollow portion from the island is suppressed, and malfunction can be prevented.
Further, since there is a metal layer in the resin part at the bottom of the hollow part, moisture permeation into the hollow part can be prevented, so that moisture resistance can be achieved.
（パッケージの成形体）
本発明に係る中空パッケージのリードフレームと結合する成形体は、通常は樹脂が用いられる。樹脂としては、エポキシ樹脂、ポリイミド樹脂、フェノール樹脂、不飽和ポリエステル樹脂等の熱硬化性樹脂、又は液晶ポリマー、ポリフェニレンオキシド、ポリフェニレンスルフィド樹脂（ＰＰＳ）、ポリスルホン、ポリアミド・イミド・ポリアリルスルフォン樹脂等の耐熱性を有する熱可塑性樹脂が用いられることが望ましい。これらの内では耐熱性や成形性の面から、エポキシ樹脂、ポリイミド樹脂、ＰＰＳを用いることがより望ましい。エポキシ樹脂としてはビスフェノールＡ型、オルソクレゾールノボラック型、ビフェニル型、ナフタレン型、グリシジルアミン型などのエポキシ樹脂を用いることができる。ポリイミド樹脂としてはポリアミノビスマレイミド、ポリピロメリットイミド、ポリエーテルイミド等のポリイミド樹脂を用いることができる。
(Packaged compact)
Resin is usually used for the molded body to be coupled to the lead frame of the hollow package according to the present invention. Examples of the resin include thermosetting resins such as epoxy resins, polyimide resins, phenol resins, unsaturated polyester resins, or liquid crystal polymers, polyphenylene oxide, polyphenylene sulfide resins (PPS), polysulfones, polyamide / imide / polyallyl sulfone resins, and the like. It is desirable to use a thermoplastic resin having heat resistance. Among these, it is more preferable to use an epoxy resin, a polyimide resin, or PPS in terms of heat resistance and moldability. Epoxy resins such as bisphenol A type, orthocresol novolac type, biphenyl type, naphthalene type, and glycidylamine type can be used as the epoxy resin. Polyimide resins such as polyamino bismaleimide, polypyromellitimide, and polyetherimide can be used as the polyimide resin.
当該樹脂の中には無機充填剤を添加することが好ましい。無機充填剤としてはシリカ粉末、アルミナ粉末、窒化珪素粉末、ボロンナイトライド粉末、酸化チタン粉末、炭化珪素粉末、ガラス繊維、アルミナ繊維等の耐熱無機充填剤が挙げられる。これらの内、樹脂の等方性収縮の点で繊維よりもシリカ粉末、アルミナ粉末、窒化珪素粉末、ボロンナイトライド粉末などの粉末がより好ましい。無機充填剤の粒径は、通常０．１〜１２０μｍ、さらには、０．５〜５０μｍであることがより好ましい。無機充填剤は耐熱樹脂１００重量部に対して通常４０〜３２００重量部、好ましくは１００〜１１５０重量部配合される。又、無機充填剤の他に、本発明の目的を損ねない範囲で、硬化剤、硬化促進剤、及びカップリング剤が含まれていても良い。 An inorganic filler is preferably added to the resin. Examples of the inorganic filler include heat-resistant inorganic fillers such as silica powder, alumina powder, silicon nitride powder, boron nitride powder, titanium oxide powder, silicon carbide powder, glass fiber, and alumina fiber. Of these, silica powder, alumina powder, silicon nitride powder, boron nitride powder and the like are more preferable than fibers in terms of isotropic shrinkage of the resin. The particle size of the inorganic filler is usually 0.1 to 120 μm, and more preferably 0.5 to 50 μm. The inorganic filler is usually blended in an amount of 40 to 3200 parts by weight, preferably 100 to 1150 parts by weight, based on 100 parts by weight of the heat resistant resin. In addition to the inorganic filler, a curing agent, a curing accelerator, and a coupling agent may be contained within a range not impairing the object of the present invention.
（中空パッケージ）
本発明の中空パッケージは、前記のリードフレーム及び前記の成形体からなる。例えば、実施形態1〜３のような形状が挙げられるがこれに限定されるものではない。
(Hollow package)
The hollow package of the present invention comprises the lead frame and the molded body. For example, the shapes as in Embodiments 1 to 3 may be mentioned, but the present invention is not limited thereto.
（実施形態１）
図１−１に示すような、リードとアイランドを有するリードフレームを用いて成形体を成形をした後ダムバーを切断しその後この成形体をリードから切り離した後、全てのアウターリードを曲げて２次元固体撮像素子搭載用の中空パッケージが得られる（図１−２）。アイランドは中空部の内表面に搭載される２次元撮像素子の接続端子近傍に露出されていてその中間部は屈曲後中空部底部の樹脂部に埋設されている。
(Embodiment 1)
As shown in FIG. 1-1, after forming a molded body using a lead frame having leads and islands, the dam bar is cut, and then the molded body is separated from the leads. A hollow package for mounting a solid-state imaging device is obtained (FIGS. 1-2). The island is exposed in the vicinity of the connection terminal of the two-dimensional imaging device mounted on the inner surface of the hollow portion, and its intermediate portion is embedded in the resin portion at the bottom of the hollow portion after bending.
（実施形態２）
図２−１に示すような、リードとアイランドを有するリードフレームを用いて樹脂成形をした後、全てのアウターリードを曲げて１次元固体撮像素子搭載用の中空パッケージが得られる（図２−２）。アイランドは中空部の内表面に搭載される１次元撮像素子の接続端子近傍に露出されていてその中間部は屈曲後中空部底部の成形体に埋設されている。
(Embodiment 2)
After resin molding using a lead frame having leads and islands as shown in FIG. 2A, all outer leads are bent to obtain a hollow package for mounting a one-dimensional solid-state imaging device (FIG. 2-2). ). The island is exposed in the vicinity of the connection terminal of the one-dimensional imaging device mounted on the inner surface of the hollow portion, and its intermediate portion is embedded in the molded body at the bottom of the hollow portion after bending.
（実施形態３）
図３に示すように、アイランドは中空部の内表面に搭載される１次元固体撮像素子の両接続端子部近傍のみに露出されていてその中間部は屈曲後中空部外表面に露出されている。
(Embodiment 3)
As shown in FIG. 3, the island is exposed only in the vicinity of both connection terminal portions of the one-dimensional solid-state imaging device mounted on the inner surface of the hollow portion, and its intermediate portion is exposed on the outer surface of the hollow portion after bending. .
（製造方法）
本発明の中空パッケージは、前記のリードフレームと樹脂等からなる成形体を結合したものであり、リードフレームを用いてインサート成形により得られる。
インサート成形は、リードフレームを成形金型に装着し、該金型のキャビティーにエポキシ樹脂等を充填するトランスファー成形或いは射出成形による行われる。トランスファー成形する条件は使用する樹脂によっても異なるが、エポキシ樹脂の場合を例にとると、通常、成形圧力５〜３０ＭＰａ、成形温度１３０〜２００℃、成形時間１０〜１２０秒の条件、好ましくは成形圧力１０〜１７ＭＰａ、成形温度１５０〜１８０℃、成形時間１５〜６０秒の条件で行われる。
(Production method)
The hollow package of the present invention is a combination of the lead frame and a molded body made of resin or the like, and is obtained by insert molding using the lead frame.
Insert molding is performed by transfer molding or injection molding in which a lead frame is mounted on a molding die, and a cavity of the die is filled with an epoxy resin or the like. The conditions for transfer molding differ depending on the resin used, but taking the case of an epoxy resin as an example, the conditions are usually a molding pressure of 5 to 30 MPa, a molding temperature of 130 to 200 ° C., a molding time of 10 to 120 seconds, preferably molding. The pressure is 10 to 17 MPa, the molding temperature is 150 to 180 ° C., and the molding time is 15 to 60 seconds.
射出成形の場合は、通常、射出圧力５〜１００ＭＰａ、成形温度１３０〜２００℃、成形時間１０〜１２０秒の条件、好ましくは射出圧力８〜６０ＭＰａ、成形温度１５０〜１８０℃、成形時間１５〜６０秒の条件で成形される。その後、それぞれの成形法において必要に応じて後硬化を加えることができる。 In the case of injection molding, usually, the injection pressure is 5 to 100 MPa, the molding temperature is 130 to 200 ° C., the molding time is 10 to 120 seconds, preferably the injection pressure is 8 to 60 MPa, the molding temperature is 150 to 180 ° C., and the molding time is 15 to 60. Molded in seconds. Thereafter, post-curing can be applied as necessary in each molding method.
以下、図面に基づいて本発明の実施形態を説明するが、本発明はこれに限定されるものではない。 Hereinafter, although an embodiment of the present invention is described based on a drawing, the present invention is not limited to this.
（実施例１）
図１−１に示すような２次元固体撮像素子用のリードフレームを作製する。アイランドは素子の接続端子領域近傍から折り曲げ加工がされている。折り曲げ加工されたアイランドの縦幅は中空部底部の内表面から露出するアイランドの幅と同じか又はそれ以上が好ましい。ただ、それ以下であっても良い。このリードフレームを樹脂成形金型に装着し樹脂成形した後ダムバーを切断、金メッキが施された後、アウターリード部を曲げた形状が図１−２である。中空部底部の内表面には素子の接続端子領域近傍にアイランドが露出している。そのアイランドの中間部は中空部底部の樹脂部に埋設されている。素子の信号増幅部から発生した熱は中空部底部の内表面に露出したアイランドから中空部底部の樹脂部の中に埋設されたアイランドを通して中空部底部の樹脂部へと放熱される。素子中間部にある画素領域近傍には金メッキされた金属製のアイランドがほぼ存在しないので中空部に入った光の反射は極力抑えられる。又中空部底部の樹脂部の一番薄くなった部分のほぼ全領域が金属層で覆われることから中空部への水分の透湿を防止できるので耐湿性能を有することもできる。
又、図示されていないがアイランドの中間部は中空部底部の外表面に露出していても良い。
Example 1
A lead frame for a two-dimensional solid-state imaging device as shown in FIG. The island is bent from the vicinity of the connection terminal region of the element. The vertical width of the folded island is preferably equal to or greater than the width of the island exposed from the inner surface of the bottom of the hollow portion. However, it may be less than that. FIG. 1-2 shows a shape in which the outer lead portion is bent after the dam bar is cut and gold-plated after the lead frame is mounted on a resin mold and molded. An island is exposed near the connection terminal region of the element on the inner surface of the bottom of the hollow portion. The middle part of the island is embedded in the resin part at the bottom of the hollow part. The heat generated from the signal amplification part of the element is radiated from the island exposed on the inner surface of the bottom of the hollow part to the resin part at the bottom of the hollow part through the island embedded in the resin part at the bottom of the hollow part. Since there are almost no gold-plated metal islands in the vicinity of the pixel region in the middle of the element, reflection of light entering the hollow portion is suppressed as much as possible. Moreover, since almost the entire area of the thinnest part of the resin part at the bottom of the hollow part is covered with the metal layer, moisture permeation into the hollow part can be prevented, so that it can have moisture resistance.
Although not shown, the middle part of the island may be exposed on the outer surface of the bottom of the hollow part.
（実施例２）
図２−１に示すようなリードフレームを作製する。１次元の固体撮像素子用のリードフレームであることからリード部は両端に偏っている。アイランドは中空部底部の内表面に装着できるように細尺形状をしていて両端部に吊りピンが形成されている。そしてアイランドを、素子の接続端子領域と接する部分近傍は中空部底部の内表面に露出させ、素子の接続端子領域以外である画素領域と接する部分は樹脂部に埋設させるために、アイランドは、接続端子領域と画素領域とが接する部分近傍から折り曲げ加工がされている。折り曲げ加工されたアイランドの幅は中空部底部の内表面から露出するアイランドの幅と同じか又はそれ以上が好ましい。ただ、それ以下であっても良い。又、樹脂部の内部に挿入されるアイランドの位置精度を向上させるために、当該屈曲後のアイランド中間部の各両辺に１から数本の吊りピンが外周リードフレームに向けて延出されていても良い。このリードフレームを樹脂成形金型に装着し樹脂成形した後ダムバーを切断、金メッキが施された後、アウターリード部を曲げた形状が図２−２である。中空部内表面には接続端子領域と接する部分近傍が露出している。そのアイランドの中間部は中空部底部の樹脂部に挿入されている。素子端部から発生した熱は中空部内表面に露出したアイランドから中空部底部の樹脂部の中に埋設されたアイランドを通して中空部底部の樹脂部へと放熱される。素子中間部にある画素領域近傍には金メッキされた金属製のアイランドが存在しないので中空部に入った光の反射は極力抑えられる。又中空部底部の樹脂部の一番薄くなった部分のほぼ全領域が金属層で覆われることから中空部への水分の透湿を防止できるので耐湿性能を有することもできる。
(Example 2)
A lead frame as shown in FIG. Since the lead frame is for a one-dimensional solid-state imaging device, the lead portion is biased toward both ends. The island has a narrow shape so that it can be attached to the inner surface of the bottom of the hollow portion, and suspension pins are formed at both ends. In order to expose the island in the vicinity of the part contacting the connection terminal area of the element on the inner surface of the bottom of the hollow part and to embed the part in contact with the pixel area other than the connection terminal area of the element in the resin part, the island is connected Bending is performed from the vicinity of the portion where the terminal region and the pixel region are in contact. The width of the folded island is preferably equal to or greater than the width of the island exposed from the inner surface of the bottom of the hollow portion. However, it may be less than that. Also, in order to improve the positional accuracy of the island inserted into the resin portion, one to several suspension pins are extended toward the outer peripheral lead frame on each side of the bent intermediate portion of the island. Also good. FIG. 2-2 shows a shape in which the outer lead portion is bent after the dam bar is cut and gold-plated after the lead frame is mounted on a resin molding die and molded. The vicinity of the portion in contact with the connection terminal region is exposed on the inner surface of the hollow portion. The middle part of the island is inserted into the resin part at the bottom of the hollow part. Heat generated from the end of the element is dissipated from the island exposed on the inner surface of the hollow portion to the resin portion at the bottom of the hollow portion through the island embedded in the resin portion at the bottom of the hollow portion. Since there is no gold-plated metal island in the vicinity of the pixel region in the middle of the element, reflection of light entering the hollow portion is suppressed as much as possible. Moreover, since almost the entire area of the thinnest part of the resin part at the bottom of the hollow part is covered with the metal layer, moisture permeation into the hollow part can be prevented, so that it can have moisture resistance.
（実施例３）
図３は素子の接続端子領域と接する部分近傍にアイランドを中空部内表面に露出させ、その中間部は素子接続端子領域と画素領域の境界部が接する部分近傍から深く折り曲げ加工がされ中空部外表面に露出されている。屈曲加工されたアイランドの幅は中空部内表面に露出したアイランド幅と同じか又はそれ以上が好ましい。ただ、それ以下であっても良い。素子端部から発生した熱は中空部内表面に露出したアイランドから中空部外表面のアイランドを通して直接外気に放熱される様になるので放熱性が良くなる。同時に素子中間部にある画素領域近傍には金メッキされた金属製のアイランドが存在しないので中空部に入った光の反射は極力抑えられる。又中空部底部の樹脂部のほぼ全領域が金属層で覆われることから中空部への水分の透湿を防止できるので耐湿性能を有することができる。
(Example 3)
In FIG. 3, the island is exposed on the inner surface of the hollow portion in the vicinity of the portion that contacts the connection terminal region of the element, and the intermediate portion is deeply bent from the vicinity of the portion where the boundary between the element connection terminal region and the pixel region is in contact with the outer surface of the hollow portion Is exposed. The width of the bent island is preferably equal to or larger than the island width exposed on the inner surface of the hollow portion. However, it may be less than that. Heat generated from the end of the element is radiated from the island exposed on the inner surface of the hollow portion directly to the outside air through the island on the outer surface of the hollow portion, so that the heat dissipation is improved. At the same time, since there is no gold-plated metal island in the vicinity of the pixel region in the element intermediate portion, reflection of light entering the hollow portion is suppressed as much as possible. In addition, since almost the entire region of the resin portion at the bottom of the hollow portion is covered with the metal layer, moisture permeation into the hollow portion can be prevented, so that moisture resistance can be achieved.
（実施例４）
図４はインナーリードが中空部の棚段部に露出し他端部となるアウターリードは中空パッケージの裏面に露出していてその中間層は樹脂内部で屈曲加工された表面実装タイプの中空パッケージである。表面実装用中空パッケージに本アイランド構造を適用させている。中空部内表面に搭載される１次元固体撮像素子の両端部にアイランドが露出しその中間部は屈曲後、底部の樹脂部に埋設されている。
Example 4
FIG. 4 shows a surface mount type hollow package in which the inner lead is exposed at the shelf step portion of the hollow portion and the outer lead as the other end portion is exposed at the back surface of the hollow package, and the intermediate layer is bent inside the resin. is there. The island structure is applied to a hollow package for surface mounting. The islands are exposed at both ends of the one-dimensional solid-state imaging device mounted on the inner surface of the hollow part, and the middle part is bent and embedded in the resin part at the bottom.
（実施例５）
図５はインナーリードが中空部の棚段部に露出し他端部となるアウターリードは中空パッケージの裏面に露出していてその中間層は樹脂内部で屈曲加工された表面実装タイプの中空パッケージである。表面実装用中空パッケージに本アイランド構造を適用させている。中空部内表面に搭載される１次元固体撮像素子の両端部にアイランドが露出しその中間部は屈曲後、中空部底部の外表面に露出されている。
(Example 5)
FIG. 5 shows a surface mount type hollow package in which the inner lead is exposed at the shelf step portion of the hollow portion and the outer lead as the other end portion is exposed at the back surface of the hollow package, and the intermediate layer is bent inside the resin. is there. The island structure is applied to a hollow package for surface mounting. The islands are exposed at both ends of the one-dimensional solid-state imaging device mounted on the inner surface of the hollow part, and the intermediate part is exposed on the outer surface of the bottom part of the hollow part after bending.
（実施例６）
図６は、２次元固体撮像素子装着用の中空パッケージで中空部底部の内表面に露出したアイランドが素子の接続端子領域近傍にて折り曲げ加工され中空部底部の樹脂部に埋設されている。素子がダイボンディングで固着された後、素子の接続端子と中空パッケージのインナーリード部とが金線でワイヤーボンディングされ、その後上面ガラス乃至透明樹脂にてシールされた半導体装置である。
(Example 6)
FIG. 6 shows a hollow package for mounting a two-dimensional solid-state imaging device, in which an island exposed on the inner surface of the bottom of the hollow portion is bent near the connection terminal region of the device and embedded in the resin portion of the bottom of the hollow portion. After the element is fixed by die bonding, the connection terminal of the element and the inner lead portion of the hollow package are wire-bonded with a gold wire and then sealed with a top glass or a transparent resin.
（実施例７）
図７は、１次元固体撮像素子装着用の中空パッケージで中空部底部の内表面に露出したアイランドが素子の接続端子領域近傍にて折り曲げ加工され中空部底部の樹脂部に埋設されている。上記と同様に素子がダイボンディングで固着された後、素子の接続端子と中空パッケージのインナーリード部とが金線でワイヤーボンディングされ、その後上面ガラス乃至透明樹脂にてシールされた半導体装置である。
(Example 7)
FIG. 7 shows a hollow package for mounting a one-dimensional solid-state imaging device. An island exposed on the inner surface of the bottom of the hollow portion is bent near the connection terminal region of the device and embedded in a resin portion of the bottom of the hollow portion. In the same manner as described above, after the element is fixed by die bonding, the connection terminal of the element and the inner lead portion of the hollow package are wire-bonded with a gold wire, and then sealed with an upper glass or a transparent resin.
１ アイランド
２ インナーリード
３ アウターリード
４ 吊りピン
５ ダムバー
６ アイランド屈曲部
７ 中空部底部
８ 中空部（底部）内表面
９ 中空部（底部）外表面
１０ 中空部（底部）内表面に露出したアイランド
１１ 中空部底部の樹脂部に挿入されたアイランド
１２ 中空部（底部）外表面に露出したアイランド
１３ ２次元固体撮像素子
１４ １次元固体撮像素子
１５ 接続端子
１６ 接続端子領域
１７ 画素領域
１８ Ａｕ線
１９ 透明蓋
２０ インナーリード棚段
２１ 中空パッケージの外稜線
DESCRIPTION OF SYMBOLS 1 Island 2 Inner lead 3 Outer lead 4 Hanging pin 5 Dam bar 6 Island bending part 7 Hollow part bottom part 8 Hollow part (bottom part) inner surface 9 Hollow part (bottom part) outer surface 10 Island 11 exposed to inner surface of hollow part (bottom part) Island 12 inserted in resin portion at bottom of hollow portion Island exposed at outer surface of hollow portion (bottom) 13 Two-dimensional solid-state imaging device 14 One-dimensional solid-state imaging device 15 Connection terminal 16 Connection terminal region 17 Pixel region 18 Au wire 19 Transparent Lid 20 Inner lead shelf 21 Outer edge of hollow package
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| TW201104850A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure with large air cavity |
| EP2788280B1 (en) * | 2011-12-07 | 2018-06-20 | Georgia Tech Research Corporation | Packaging compatible wafer level capping of mems devices |
| JP6063690B2 (en) * | 2012-10-01 | 2017-01-18 | 株式会社ニコン | Hollow package container and manufacturing method thereof |
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| JP4359076B2 (en) * | 2003-06-10 | 2009-11-04 | 三井化学株式会社 | Resin hollow package and semiconductor device using the same |
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| JP3734225B1 (en) * | 2005-03-29 | 2006-01-11 | 吉川工業株式会社 | Surface mount type resin hollow package and semiconductor device using the same |
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