JP2000228455A - Bga-type ic package - Google Patents
Bga-type ic packageInfo
- Publication number
- JP2000228455A JP2000228455A JP29185299A JP29185299A JP2000228455A JP 2000228455 A JP2000228455 A JP 2000228455A JP 29185299 A JP29185299 A JP 29185299A JP 29185299 A JP29185299 A JP 29185299A JP 2000228455 A JP2000228455 A JP 2000228455A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- package
- bga type
- heat
- sphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＢＧＡ型ＩＣパッ
ケージに関し、更に詳細には、実装基板に実装した際の
はんだ接合の信頼性の高いはんだボールを備えたＢＧＡ
型ＩＣパッケージに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a BGA type IC package, and more particularly, to a BGA type IC package having a solder ball having high reliability of solder joint when mounted on a mounting board.
The present invention relates to a type IC package.
【０００２】[0002]
【従来の技術】電気／電子機器の小型化に伴い、半導体
装置等の電子部品を実装基板上に実装する際の実装密度
を高めることが、重要になっている。2. Description of the Related Art With miniaturization of electric / electronic devices, it has become important to increase the mounting density when electronic components such as semiconductor devices are mounted on a mounting substrate.
【０００３】実装密度を高める手段の一つとして、従来
のピン型ＩＣパッケージに代わって、ＢＧＡ（ボール・
グリッド・アレイ）型ＩＣパッケージが開発されてい
る。[0003] As one of means for increasing the mounting density, a BGA (ball-type IC) is used instead of the conventional pin-type IC package.
Grid array type IC packages have been developed.
【０００４】ここで、図５を参照して、ＢＧＡ型ＩＣパ
ッケージの構成を説明する。図５はＢＧＡ型ＩＣパッケ
ージの構成を示す模式的断面図である。Here, the configuration of a BGA type IC package will be described with reference to FIG. FIG. 5 is a schematic sectional view showing the configuration of the BGA type IC package.
【０００５】ＢＧＡ型ＩＣパッケージ１０は、図５に示
すように、ＩＣチップ１２と、ＩＣチップ１２を載せた
樹脂基板１４と、樹脂基板１４の下面に設けられ、ボン
ディングワイヤ１６を介してＩＣチップ１２の電極と接
続されたはんだボール１６とを備えている。[0005] As shown in FIG. 5, the BGA type IC package 10 is provided with an IC chip 12, a resin substrate 14 on which the IC chip 12 is mounted, and a lower surface of the resin substrate 14. And solder balls 16 connected to the twelve electrodes.
【０００６】はんだボール１６は、はんだ金属のみで形
成されている。ＩＣチップ１２及びボンディングワイヤ
１６は、封止樹脂１８で封止されている。[0006] The solder ball 16 is formed only of a solder metal. The IC chip 12 and the bonding wires 16 are sealed with a sealing resin 18.
【０００７】ＢＧＡ型ＩＣパッケージ１０を実装基板２
０上に実装する際には、図５に示すように、実装基板の
配線パターンのはんだランドにＢＧＡ型ＩＣパッケージ
１０のはんだボール１６を位置させ、溶融、固化するこ
とにより、ＢＧＡ型ＩＣパッケージ１０を実装基板２０
に電気的及び機械的に接続している。The BGA type IC package 10 is mounted on the mounting substrate 2
5, the solder balls 16 of the BGA type IC package 10 are positioned on the solder lands of the wiring pattern of the mounting board, and are melted and solidified as shown in FIG. Mounting board 20
Is electrically and mechanically connected to
【０００８】[0008]
【発明が解決しようとする課題】しかし、従来のＢＧＡ
型ＩＣパッケージのはんだボールは、ＢＧＡ型ＩＣパッ
ケージを実装基板にはんだ接合により実装したとき、或
いはその後、はんだボールにクラックが入ったり、破壊
したりして、ＢＧＡ型ＩＣパッケージと実装基板との電
気的接続及び機械的接合の信頼性が低下するという問題
があった。However, the conventional BGA
When the BGA type IC package is mounted on the mounting board by solder bonding, or after that, the solder balls of the type IC package are cracked or broken, and the electrical connection between the BGA type IC package and the mounting board is reduced. There is a problem that reliability of mechanical connection and mechanical joining is reduced.
【０００９】そこで、本発明の目的は、電気的接続及び
機械的接合の信頼性の高いＢＧＡ型ＩＣパッケージを提
供することである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a BGA type IC package having high reliability of electrical connection and mechanical connection.
【００１０】[0010]
【課題を解決するための手段】本発明者は、従来のＢＧ
Ａ型ＩＣパッケージのはんだ接合の接合強度の信頼性が
低い原因を調べた結果、はんだボールがはんだ金属のみ
で形成されていて、ＢＧＡ型ＩＣパッケージの樹脂基板
や実装基板と構成材料が異なるので、それぞれの熱膨張
率が相互に異なる。その結果、ＢＧＡ型ＩＣパッケージ
と実装基板とをリフロー装置に送入して、はんだボール
を溶融させた際の加熱、及びその後の熱履歴により、熱
膨張による寸法差が生じ、従ってはんだボールに変形の
応力が生じるため、はんだボールにクラックが発生する
ことを見い出した。The present inventor has proposed a conventional BG
As a result of examining the cause of the low reliability of the joint strength of the solder joint of the A-type IC package, the solder ball is formed only of the solder metal, and the constituent material is different from the resin substrate and the mounting substrate of the BGA type IC package. Each has a different coefficient of thermal expansion. As a result, a dimensional difference due to thermal expansion occurs due to the heating when the BGA type IC package and the mounting board are sent to the reflow device and the solder balls are melted, and the subsequent heat history, and thus the solder balls are deformed. Was found to cause cracks in the solder balls.
【００１１】そこで、本発明者は、樹脂や耐熱性シリコ
ンゴムで作製した球体を核とし、その周りをはんだ金属
で被覆した構成のはんだボールを着想し、実験を重ねて
本発明を完成するに到った。The present inventors have conceived of a solder ball having a sphere made of resin or heat-resistant silicon rubber as a nucleus and surrounding the sphere with a solder metal. It has arrived.
【００１２】上記目的を達成するために、本発明に係る
ＢＧＡ型ＩＣパッケージ（以下、第１の発明と言う）
は、ＩＣチップと、ＩＣチップを載せた樹脂基板と、樹
脂基板の下面に設けられ、ボンディングワイヤを介して
ＩＣチップの電極と接続されたはんだボールとを備えて
いる、ＢＧＡ型ＩＣパッケージにおいて、はんだボール
は、耐熱性有機物からなる球体と、球体の球面を被覆し
たはんだ金属殻とを備えていることを特徴としている。In order to achieve the above object, a BGA type IC package according to the present invention (hereinafter referred to as a first invention).
Is a BGA type IC package including an IC chip, a resin substrate on which the IC chip is mounted, and a solder ball provided on the lower surface of the resin substrate and connected to an electrode of the IC chip via a bonding wire. The solder ball includes a sphere made of a heat-resistant organic material and a solder metal shell covering the spherical surface of the sphere.
【００１３】好適には、耐熱性有機物からなる球体の直
径は、２００μｍ以上８００μｍ以下である。Preferably, the diameter of the sphere made of a heat-resistant organic material is not less than 200 μm and not more than 800 μm.
【００１４】本発明のＢＧＡ型ＩＣパッケージのはんだ
ボールは、熱膨張差により発生した変形応力がシリコン
ゴムや樹脂の高弾性率により吸収され、はんだボールに
クラックが入ったり破壊したりすることがない。In the solder ball of the BGA type IC package of the present invention, the deformation stress generated due to the difference in thermal expansion is absorbed by the high elastic modulus of the silicone rubber or resin, so that the solder ball is not cracked or broken. .
【００１５】特開平１０−１６３４０４号公報は、中心
に銅球を有するはんだボールの構成を示しているが、接
合強度の記載のみであり、基板に実装した場合、銅球の
表面のはんだが、剥がれたりすることが明白である。本
発明は、はんだボールの中心に弾性体であるシリコンゴ
ムやポリマ樹脂を有することにより、はんだのクラック
や破壊を防止することができる。Japanese Patent Application Laid-Open No. H10-163404 discloses the configuration of a solder ball having a copper ball at the center, but only describes the bonding strength. When mounted on a board, the solder on the surface of the copper ball has It is clear that it will come off. According to the present invention, cracks and breakage of the solder can be prevented by having an elastic silicon rubber or polymer resin at the center of the solder ball.
【００１６】また、上記目的を達成するために、本発明
に係る別のＢＧＡ型ＩＣパッケージ（以下、第２の発明
と言う）は、ＩＣチップと、ＩＣチップを載せた樹脂基
板と、樹脂基板の下面に設けられ、ボンディングワイヤ
を介してＩＣチップの電極と接続されたはんだボールと
を備えている、ＢＧＡ型ＩＣパッケージにおいて、はん
だボールは、耐熱性有機物からなる球体と、球体の球面
を被覆したはんだ金属殻とを備えている小球はんだボー
ルを集合してなる球状のはんだボール集合体であること
を特徴としている。In order to achieve the above object, another BGA type IC package according to the present invention (hereinafter referred to as a second invention) comprises an IC chip, a resin substrate on which the IC chip is mounted, and a resin substrate. And a solder ball connected to the electrode of the IC chip through a bonding wire. The solder ball covers a sphere made of a heat-resistant organic material and a spherical surface of the sphere. And a spherical solder ball aggregate formed by assembling small spherical solder balls having a solder metal shell formed therein.
【００１７】好適には、小球はんだボールの直径は、１
０μｍ以上３０μｍ以下である。Preferably, the diameter of the small ball is 1
It is not less than 0 μm and not more than 30 μm.
【００１８】好適には、耐熱性有機物製の球体と、球体
の球面を被覆したはんだ金属殻との間に、耐熱性有機物
とはんだ金属との密着性を高める密着金属からなる密着
金属殻を備えている。密着金属殻を形成するには、密着
金属として、金、銀、銅、パラジウム、ニッケル等を使
用し、球体上に蒸着させる。はんだ金属殻は、密着金属
殻を有する球体をはんだ金属の溶融槽に浸漬することに
より、密着金属殻上にはんだ金属殻を形成する。Preferably, an adhesion metal shell made of an adhesion metal for improving the adhesion between the heat-resistant organic substance and the solder metal is provided between the heat-resistant organic sphere and the solder metal shell covering the spherical surface of the sphere. ing. In order to form an adherent metal shell, gold, silver, copper, palladium, nickel, or the like is used as an adherent metal and is deposited on a sphere. The solder metal shell forms a solder metal shell on the close contact metal shell by immersing a sphere having the close contact metal shell in a solder metal melting bath.
【００１９】耐熱性有機物は、はんだ接合の際の温度、
例えば２３０℃以上３００℃以下の温度範囲で耐熱性が
有るかぎり、制約はなく、例えば耐熱性シリコンゴム、
耐熱性プラスチック等を使用する。The heat-resistant organic substance includes a temperature at the time of solder joining,
For example, there is no limitation as long as heat resistance exists in a temperature range of 230 ° C. or more and 300 ° C. or less.
Use a heat-resistant plastic or the like.
【００２０】[0020]
【発明の実施の形態】以下に、添付図面を参照し、実施
例を挙げて本発明の実施の形態を具体的かつ詳細に説明
する。 実施形態例１ 本実施形態例は、第１の発明に係るＢＧＡ型ＩＣパッケ
ージの実施形態の一例であって、図１は本実施形態例の
ＢＧＡ型ＩＣパッケージの要部であるはんだボールの構
成を示す断面図である。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Embodiment 1 This embodiment is an example of an embodiment of a BGA type IC package according to the first invention. FIG. 1 shows a configuration of a solder ball which is a main part of the BGA type IC package of this embodiment. FIG.
【００２１】本実施形態例のＢＧＡ型ＩＣパッケージ
は、はんだボール３０の構成を除いて従来のＢＧＡ型Ｉ
Ｃパッケージ１０と同じ構成を備えている。本実施形態
例のＢＧＡ型ＩＣパッケージのはんだボール３０は、図
１に示すように、２３０℃以上３００℃以下の温度範囲
で耐熱性を有するシリコンゴム、ポリマ等の有機樹脂か
らなる直径２００μｍから８００μｍ以上のはんだボー
ル３０の中心核として形成された球体３２と、球体３２
の全表面にわたり１μｍから５μｍ程度の厚さで蒸着さ
れた密着金属殻３４と、更に、その上に設けられた５μ
ｍから２０μｍ程度の厚さのはんだ金属殻３６とを備え
ている。The BGA type IC package of this embodiment is the same as the conventional BGA type I package except for the configuration of the solder balls 30.
It has the same configuration as the C package 10. As shown in FIG. 1, the solder ball 30 of the BGA type IC package of the present embodiment has a diameter of 200 μm to 800 μm made of an organic resin such as silicon rubber or polymer having heat resistance in a temperature range of 230 ° C. or more and 300 ° C. or less. A sphere 32 formed as a central nucleus of the above solder ball 30 and a sphere 32
Metal shell 34 deposited to a thickness of about 1 μm to 5 μm over the entire surface of
and a solder metal shell 36 having a thickness of about m to 20 μm.
【００２２】はんだボール３０を形成するには、先ず、
球体３２を構成する樹脂を液状にて必要な量、抽出し、
表面張力により球を形成する。また、球体３２の成形金
型を製作し、樹脂を成形金型に注入し、球体３２に形成
する方法もある。更には、樹脂を針金状の線状体を形成
し、次いで所定の樹脂量を有する長さに線状体を切断
し、上下の金型で押すように転がしながら擦り合わせ
て、球体３２を形成する方法もある。To form the solder ball 30, first,
Extract the required amount of resin constituting the spherical body 32 in liquid form,
A sphere is formed by surface tension. There is also a method in which a molding die for the sphere 32 is manufactured, and a resin is injected into the molding die to form the sphere 32. Further, the resin is formed into a wire-shaped linear body, and then the linear body is cut into a length having a predetermined amount of resin, and rubbed while being pressed and pressed by upper and lower dies to form a sphere 32. There is also a way to do it.
【００２３】次いで、得た球体３２を蒸着装置に入れ、
球体３２を回転しながら密着金属の金、銀、銅、パラジ
ウム、ニッケル等を蒸着する。最後に、はんだ金属溶融
液に浸して無電解めっきを行う。 実施形態例２ 本実施形態例は、第２の発明に係るＢＧＡ型ＩＣパッケ
ージの実施形態の一例であって、図２（ａ）は本実施形
態例のＢＧＡ型ＩＣパッケージの要部であるはんだボー
ルの構成を示す断面図であり、図２（ｂ）ははんだボー
ルを構成する小球はんだボールの構成を示す断面図であ
る。Next, the obtained sphere 32 is put into a vapor deposition device,
While rotating the sphere 32, gold, silver, copper, palladium, nickel, or the like of a close contact metal is deposited. Finally, it is immersed in a molten solder metal to perform electroless plating. Embodiment 2 This embodiment is an example of an embodiment of a BGA-type IC package according to the second invention, and FIG. 2A shows a solder which is a main part of the BGA-type IC package of this embodiment. It is sectional drawing which shows the structure of a ball, FIG.2 (b) is sectional drawing which shows the structure of the small ball solder ball which comprises a solder ball.
【００２４】本実施形態例のＢＧＡ型ＩＣパッケージ
は、はんだボール４０の構成を除いて従来のＢＧＡ型Ｉ
Ｃパッケージ１０と同じ構成を備えている。本実施形態
例のはんだボール４０は、図２（ａ）に示すように、小
球はんだボール４２を集合してなる球状のはんだボール
集合体として構成されていて、小球はんだボール４２は
相互に接合はんだ４３によるはんだ接合により接合して
いる。The BGA type IC package of this embodiment is the same as the conventional BGA type I package except for the configuration of the solder balls 40.
It has the same configuration as the C package 10. As shown in FIG. 2A, the solder ball 40 of the present embodiment is configured as a spherical solder ball aggregate obtained by gathering small ball solder balls 42, and the small ball solder balls 42 are mutually connected. Bonding is performed by solder bonding using the bonding solder 43.
【００２５】小球はんだボール４２は、図２（ｂ）に示
すように、小球はんだボール４２の中心に、２３０℃以
上３００℃以下の温度範囲で耐熱性を有するシリコンゴ
ム、ポリマ等の有機樹脂で形成された直径１０μｍから
３０μｍ以上の球体４４と、球体４４の全表面にわたり
１μｍから５μｍ程度の厚さで蒸着された密着金属殻４
６と、更に、その上に設けられた５μｍから２０μｍ程
度の厚さのはんだ金属殻４８とを備えている。小球はん
だボール４２は、はんだ金属殻４８が溶融、接合した接
合はんだ４３より相互に接合されている。As shown in FIG. 2B, the small ball solder ball 42 is provided at the center of the small ball solder ball 42 with an organic material such as silicon rubber or polymer having heat resistance in a temperature range of 230 ° C. or more and 300 ° C. or less. A sphere 44 formed of resin and having a diameter of 10 μm to 30 μm or more, and an adhered metal shell 4 deposited over the entire surface of the sphere 44 to a thickness of about 1 μm to 5 μm.
6 and a solder metal shell 48 having a thickness of about 5 μm to 20 μm provided thereon. The small ball solder balls 42 are joined to each other by a joining solder 43 in which a solder metal shell 48 is melted and joined.
【００２６】本実施形態例のＢＧＡ型ＩＣパッケージで
は、小球はんだボール４２を多数形成し、それらを金型
に入れて加熱し、はんだ金属殻を溶融、接合させること
により、はんだボール４０を形成することができる。 実施形態例３ 本実施形態例は、第３の発明に係るＢＧＡ型ＩＣパッケ
ージの実施形態の一例であって、図３（ａ）は本実施形
態例のＢＧＡ型ＩＣパッケージの構成を示す断面図であ
り、図３（ｂ）はその作用及び効果を示す断面図であ
る。In the BGA type IC package of this embodiment, the solder balls 40 are formed by forming a large number of small ball solder balls 42, heating them in a mold, melting and joining the solder metal shell. can do. Embodiment 3 This embodiment is an example of an embodiment of a BGA-type IC package according to the third invention, and FIG. 3A is a cross-sectional view showing a configuration of the BGA-type IC package of this embodiment. FIG. 3B is a cross-sectional view showing the operation and effect.
【００２７】パッケージ６２は、半導体チップ６１を内
蔵している。その半導体チップ６１はテープ５８、金属
配線５６、及び金属配線５６を覆うレジスト５７から構
成される基板上に設けられている。また、その半導体チ
ップ６１は、封入樹脂６０で封止されている。金属配線
５６はテープ５８の表裏に配置されている。半導体チッ
プ６１上に設けられたパッド６４から基板の一主面上に
形成された金属配線までワイヤ５９によりワイヤリング
されている。他方、配線基板６３は、金属配線５６及び
レジスト５７により構成されている。配線基板６３に形
成された金属配線５６とパッケージ６２に設けられた金
属配線５６は対向するように設けられている。その対向
する金属配線５６の間に樹脂はんだボール５０が挿入さ
れ、金属配線５６及び樹脂はんだボール５０は、樹脂は
んだボールよりも小さい１０ミクロンから２０ミクロン
の微少直径の極少直径樹脂ボール５４が混合されたはん
だペースト５５にてはんだ接合されている。極少直径樹
脂ボール５４の表面はニッケルや銅でめっきされてい
る。樹脂はんだボール５０は、より詳細には核として耐
熱性のポリマからなる球体５１と、その外周に５ミクロ
ンの厚みの銅メッキと１ミクロンの厚みのニッケルめっ
きからなる密着金属核５２と、最外周に５ミクロンのは
んだめっきからなるはんだ金属核５３とから構成された
ものである。なお、微少直径樹脂ボール５４は、樹脂ボ
ールそのものでもよい。その他の構成は第１及び２の発
明と同一である。The package 62 contains a semiconductor chip 61. The semiconductor chip 61 is provided on a substrate composed of a tape 58, a metal wiring 56, and a resist 57 covering the metal wiring 56. The semiconductor chip 61 is sealed with the sealing resin 60. The metal wires 56 are arranged on the front and back of the tape 58. The wires 59 are wired from the pads 64 provided on the semiconductor chip 61 to the metal wires formed on one main surface of the substrate. On the other hand, the wiring board 63 is composed of the metal wiring 56 and the resist 57. The metal wiring 56 formed on the wiring board 63 and the metal wiring 56 provided on the package 62 are provided so as to face each other. A resin solder ball 50 is inserted between the opposed metal wirings 56, and the metal wiring 56 and the resin solder ball 50 are mixed with a very small diameter resin ball 54 having a small diameter of 10 to 20 microns smaller than the resin solder ball. The solder paste 55 is used for soldering. The surface of the very small diameter resin ball 54 is plated with nickel or copper. More specifically, the resin solder ball 50 has a sphere 51 made of a heat-resistant polymer as a nucleus, an adhesive metal nucleus 52 made of copper plating of 5 μm thickness and nickel plating of 1 μm thickness on its outer periphery, And a solder metal core 53 made of 5 μm solder plating. It should be noted that the fine diameter resin ball 54 may be the resin ball itself. Other configurations are the same as those of the first and second inventions.
【００２８】図３（ｂ）を用いて第３の発明の作用及び
効果について説明する。The operation and effect of the third invention will be described with reference to FIG.
【００２９】パッケージ６２と配線基板６３は熱膨張率
が異なるために図３（ｂ）に示すように引っ張り応力を
生じる。すると従来のはんだボールによる接合では、パ
ッケージ側のはんだ接合部分にクラックが生じはんだボ
ールが破壊する。ところが本発明でははんだボール５０
に樹脂はんだボールを使用しているために弾性力が強く
樹脂はんだボールは図のように変形し、応力を解放す
る。また、接合部分の根本部分では応力が最大となる
が、微少樹脂ボール５４を混合しているためにはんだペ
ーストの見かけ上の弾性力が向上し、従って、はんだ接
合部分が柔らかく変形するためにはんだクラックが入り
にくくなり、破壊しにくくなる。Since the package 62 and the wiring board 63 have different coefficients of thermal expansion, a tensile stress is generated as shown in FIG. Then, in the conventional solder ball joining, a crack occurs in the solder joint portion on the package side, and the solder ball is broken. However, in the present invention, the solder ball 50
Since the resin solder ball is used, the elastic force is strong, and the resin solder ball is deformed as shown in the figure to release the stress. Although the stress is maximum at the root of the joint, the apparent elasticity of the solder paste is improved due to the mixing of the microscopic resin balls 54, and therefore, the solder joint is softly deformed. Cracks are less likely to occur and are less likely to break.
【００３０】図４（ａ）〜図４（ｃ）は第３の発明のパ
ッケージの製造方法を示す。図４（ａ）に示されるよう
に、はんだペースト５５に微少樹脂ボール５４を同体積
混合する。次に、図４（ｂ）に示されるように、小孔を
有する金属マスク７０を使用して治具７２によりはんだ
ペースト５５を金属配線５６上に塗布する。次に、図４
（ｃ）に示されるように、樹脂はんだボール５０を金属
配線５６上に搭載し、リフロを行って接合しパッケージ
を完成する。FIGS. 4A to 4C show a method of manufacturing a package according to the third invention. As shown in FIG. 4A, the same volume of the minute resin balls 54 is mixed with the solder paste 55. Next, as shown in FIG. 4B, a solder paste 55 is applied on the metal wiring 56 by a jig 72 using a metal mask 70 having small holes. Next, FIG.
As shown in (c), the resin solder ball 50 is mounted on the metal wiring 56, and the package is completed by performing reflow.
【００３１】[0031]
【発明の効果】第１の発明によれば、耐熱性有機物から
なる球体と、球体の球面を被覆したはんだ金属殻とか
ら、ＢＧＡ型ＩＣパッケージのはんだボールを構成する
ことにより、ＢＧＡ型ＩＣパッケージと実装基板との実
装の際の加熱、及びその後の熱履歴による熱膨張差によ
り発生した変形応力が、シリコンゴムや樹脂の高弾性率
により吸収され、はんだボールにクラックが入ったり破
壊したりすることがないので、はんだ接合の信頼性が高
い。According to the first aspect of the present invention, a BGA type IC package is formed by forming a solder ball of a BGA type IC package from a sphere made of a heat-resistant organic substance and a solder metal shell covering the spherical surface of the sphere. The deformation stress generated due to the difference in thermal expansion due to the heating during the mounting with the mounting board and the subsequent thermal history is absorbed by the high elastic modulus of the silicone rubber or resin, and the solder balls crack or break. Since there is no solder joint, the reliability of the solder joint is high.
【００３２】また、第２の発明によれば、耐熱性有機物
からなる球体と、球体の球面を被覆したはんだ金属殻と
を備えている小球はんだボールを集合してなる球状のは
んだボール集合体として、ＢＧＡ型ＩＣパッケージのは
んだボールを構成することにより、ＢＧＡ型ＩＣパッケ
ージと実装基板との実装の際の加熱、及びその後の熱履
歴による熱膨張差により発生した変形応力が、シリコン
ゴムや樹脂の高弾性率により吸収され、はんだボールに
クラックが入ったり破壊したりすることがないので、は
んだ接合の信頼性が高い。According to the second aspect of the present invention, a spherical solder ball aggregate is formed by assembling small spherical solder balls each having a sphere made of a heat-resistant organic material and a solder metal shell covering the spherical surface of the sphere. By forming the solder balls of the BGA-type IC package, the deformation stress generated by the heating at the time of mounting the BGA-type IC package and the mounting substrate, and the subsequent thermal expansion difference caused by the thermal history, is caused by silicon rubber or resin. Is absorbed by the high modulus of elasticity of the solder balls, and the solder balls are not cracked or broken, so that the reliability of the solder joint is high.
【００３３】また、第３の発明によれば、微少樹脂ボー
ルをはんだペーストに混合したものであるので、はんだ
ペーストの見かけ上の弾性力が向上し、外部応力を変形
により回避することができるので、はんだクラックが生
じにくいという効果がある。According to the third aspect of the invention, since the minute resin balls are mixed with the solder paste, the apparent elasticity of the solder paste is improved, and external stress can be avoided by deformation. This has the effect that solder cracks are less likely to occur.
【図１】実施形態例１のＢＧＡ型ＩＣパッケージの要部
であるはんだボールの構成を示す断面図である。FIG. 1 is a cross-sectional view illustrating a configuration of a solder ball which is a main part of a BGA type IC package according to a first embodiment.
【図２】図２（ａ）は実施形態例２のＢＧＡ型ＩＣパッ
ケージの要部であるはんだボールの構成を示す断面図で
あり、図２（ｂ）ははんだボールを構成する小球はんだ
ボールの構成を示す断面図である。FIG. 2A is a cross-sectional view illustrating a configuration of a solder ball which is a main part of a BGA type IC package according to a second embodiment, and FIG. 2B is a small ball solder ball forming a solder ball; It is sectional drawing which shows a structure of.
【図３】図３（ａ）は実施形態例３のＢＧＡ型ＩＣパッ
ケージの構成を示す断面図であり、図３（ｂ）は図３
（ａ）で示されたＩＣパッケージの作用及び効果を示す
断面図である。FIG. 3A is a cross-sectional view illustrating a configuration of a BGA type IC package according to a third embodiment, and FIG.
It is sectional drawing which shows the effect | action and effect of the IC package shown by (a).
【図４】図４（ａ）乃至図４（ｃ）は実施形態例３のＢ
ＧＡ型ＩＣパッケージの製造方法を示す断面図である。FIG. 4A to FIG. 4C are diagrams illustrating a B according to the third embodiment.
It is sectional drawing which shows the manufacturing method of a GA type IC package.
【図５】従来のＢＧＡ型ＩＣパッケージの構成を示す断
面図である。FIG. 5 is a cross-sectional view illustrating a configuration of a conventional BGA type IC package.
１０ ＢＧＡ型ＩＣパッケージ １２ ＩＣチップ １４ 樹脂基板 １６ ボンディングワイヤ １８ 封止樹脂 ２０ 実装基板 ３０ 実施形態例１のＢＧＡ型ＩＣパッケージのはん
だボール ３２ 球体 ３４ 密着金属殻 ３６ はんだ金属殻 ４０ 実施形態例２のＢＧＡ型ＩＣパッケージのはん
だボール ４２ 小球はんだボール ４３ 接合はんだ ４４ 球体 ４６ 密着金属殻 ４８ はんだ金属殻 ５０ 樹脂はんだボール ５１ 球体 ５２ 密着金属核 ５３ はんだ金属核 ５４ 極少直径樹脂ボール ５５ はんだペースト ５６ 金属配線 ５７ レジスト ５８ テープ ５９ ワイヤ ６０ 封入樹脂 ６１ 半導体チップ ６２ パッケージ ６３ 配線基板 ６４ パッドDESCRIPTION OF SYMBOLS 10 BGA type IC package 12 IC chip 14 Resin substrate 16 Bonding wire 18 Sealing resin 20 Mounting board 30 Solder ball of BGA type IC package of Embodiment 1 32 Sphere 34 Adhesive metal shell 36 Solder metal shell 40 Embodiment 2 Solder ball of BGA type IC package 42 Small ball solder ball 43 Bonding solder 44 Sphere 46 Adhesive metal shell 48 Solder metal shell 50 Resin solder ball 51 Sphere 52 Adhesive metal core 53 Solder metal core 54 Very small diameter resin ball 55 Solder paste 56 Metal wiring 57 Resist 58 Tape 59 Wire 60 Encapsulating resin 61 Semiconductor chip 62 Package 63 Wiring board 64 Pad
Claims (11)
基板と、樹脂基板の下面に設けられ、ボンディングワイ
ヤを介してＩＣチップの電極と接続されたはんだボール
とを備えている、ＢＧＡ型ＩＣパッケージにおいて、 はんだボールは、耐熱性有機物からなる球体と、球体の
球面を被覆したはんだ金属殻とを備えていることを特徴
とするＢＧＡ型ＩＣパッケージ。1. A BGA type IC comprising an IC chip, a resin substrate on which the IC chip is mounted, and solder balls provided on a lower surface of the resin substrate and connected to electrodes of the IC chip via bonding wires. A BGA-type IC package, wherein the solder ball includes a sphere made of a heat-resistant organic material and a solder metal shell covering the spherical surface of the sphere.
００μｍ以上８００μｍ以下であることを特徴とする請
求項１に記載のＢＧＡ型ＩＣパッケージ。2. The diameter of a sphere made of a heat-resistant organic material is 2
2. The BGA type IC package according to claim 1, wherein the BGA type IC package has a size of not less than 00 μm and not more than 800 μm.
基板と、樹脂基板の下面に設けられ、ボンディングワイ
ヤを介してＩＣチップの電極と接続されたはんだボール
とを備えている、ＢＧＡ型ＩＣパッケージにおいて、 はんだボールは、耐熱性有機物からなる球体と、球体の
球面を被覆したはんだ金属殻とを備えている小球はんだ
ボールを集合してなる球状のはんだボール集合体である
ことを特徴とするＢＧＡ型ＩＣパッケージ。3. A BGA type IC comprising an IC chip, a resin substrate on which the IC chip is mounted, and a solder ball provided on a lower surface of the resin substrate and connected to an electrode of the IC chip via a bonding wire. In the package, the solder ball is a spherical solder ball aggregate formed by assembling small spherical solder balls including a sphere made of a heat-resistant organic material and a solder metal shell covering the spherical surface of the sphere. BGA type IC package.
上３０μｍ以下であることを特徴とする請求項３に記載
のＢＧＡ型ＩＣパッケージ。4. The BGA type IC package according to claim 3, wherein the diameter of the small ball solder ball is 10 μm or more and 30 μm or less.
面を被覆したはんだ金属殻との間に、耐熱性有機物とは
んだ金属との密着性を高める密着金属からなる密着金属
殻を備えていることを特徴とする請求項１から４のいず
れか１項に記載のＢＧＡ型ＩＣパッケージ。5. An adhesive metal shell made of an adhesive metal that enhances the adhesion between the heat-resistant organic substance and the solder metal is provided between the sphere made of the heat-resistant organic substance and the solder metal shell covering the spherical surface of the sphere. The BGA type IC package according to any one of claims 1 to 4, wherein:
以下の温度範囲で耐熱性を有することを特徴とする請求
項１から５のいずれか１項に記載のＢＧＡ型ＩＣパッケ
ージ。6. The heat-resistant organic substance is at least 230 ° C. and 300 ° C.
The BGA type IC package according to any one of claims 1 to 5, having heat resistance in the following temperature range.
ることを特徴とする請求項６に記載のＢＧＡ型ＩＣパッ
ケージ。7. The BGA type IC package according to claim 6, wherein the heat-resistant organic substance is heat-resistant silicon rubber.
ることを特徴とする請求項６に記載のＢＧＡ型ＩＣパッ
ケージ。8. The BGA type IC package according to claim 6, wherein the heat-resistant organic substance is a heat-resistant plastic.
及びニッケルのいずれかであることを特徴とする請求項
１から８のいずれか１項に記載のＢＧＡ型ＩＣパッケー
ジ。9. The adhesive metal is gold, silver, copper, palladium,
The BGA type IC package according to any one of claims 1 to 8, wherein the BGA type IC package is any one of nickel and nickel.
ールが前記はんだボールよりも小さい樹脂ボールを含む
はんだペーストで接合されていることを特徴とする請求
項１乃至９に記載のＢＧＡ型ＩＣパッケージ。10. The BGA type IC package according to claim 1, wherein the electrodes of the IC chip and the solder balls are joined by a solder paste containing resin balls smaller than the solder balls.
から２０ミクロンであることを特徴とする請求項１０記
載のＢＧＡ型ＩＣパッケージ。11. The BGA type IC package according to claim 10, wherein said resin ball has a diameter of 10 to 20 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29185299A JP3217046B2 (en) | 1998-12-03 | 1999-10-14 | BGA type IC package |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34376498 | 1998-12-03 | ||
| JP10-343764 | 1998-12-03 | ||
| JP29185299A JP3217046B2 (en) | 1998-12-03 | 1999-10-14 | BGA type IC package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000228455A true JP2000228455A (en) | 2000-08-15 |
| JP3217046B2 JP3217046B2 (en) | 2001-10-09 |
Family
ID=26558725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29185299A Expired - Fee Related JP3217046B2 (en) | 1998-12-03 | 1999-10-14 | BGA type IC package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3217046B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110852A (en) * | 2000-10-03 | 2002-04-12 | Ibiden Co Ltd | Semiconductor package and connection structure of semiconductor chip |
| KR100659527B1 (en) * | 2003-10-22 | 2006-12-20 | 삼성전자주식회사 | Semiconductor chip having three dimension type ubm for flip chip bonding and mounting structure thereof |
| US7227263B2 (en) | 2004-03-19 | 2007-06-05 | Oki Electric Industry Co., Ltd. | Semiconductor device with recessed post electrode |
| US7629246B2 (en) * | 2007-08-30 | 2009-12-08 | National Semiconductor Corporation | High strength solder joint formation method for wafer level packages and flip applications |
| KR101009067B1 (en) | 2008-10-20 | 2011-01-18 | 삼성전기주식회사 | Semiconductor package having solder bump and method of manufacturing the same |
| JP2013105951A (en) * | 2011-11-15 | 2013-05-30 | Internatl Business Mach Corp <Ibm> | Device on array arrangement for using partially different solder bump in array consisting of plural solder bumps |
| CN103280437A (en) * | 2013-04-24 | 2013-09-04 | 三星半导体(中国)研究开发有限公司 | Solder ball, ball grid array packaging element comprising same and heat management enhancement method thereof |
| WO2016158030A1 (en) | 2015-03-30 | 2016-10-06 | 株式会社リトルデバイス | Conductive ball |
-
1999
- 1999-10-14 JP JP29185299A patent/JP3217046B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110852A (en) * | 2000-10-03 | 2002-04-12 | Ibiden Co Ltd | Semiconductor package and connection structure of semiconductor chip |
| KR100659527B1 (en) * | 2003-10-22 | 2006-12-20 | 삼성전자주식회사 | Semiconductor chip having three dimension type ubm for flip chip bonding and mounting structure thereof |
| US7208842B2 (en) | 2003-10-22 | 2007-04-24 | Samsung Electronics Co., Ltd | Semiconductor chip, mounting structure thereof, and methods for forming a semiconductor chip and printed circuit board for the mounting structure thereof |
| US7338891B2 (en) | 2003-10-22 | 2008-03-04 | Samsung Electronics Co., Ltd. | Semiconductor chip, mounting structure thereof, and methods for forming a semiconductor chip and printed circuit board for the mounting structure thereof |
| US7227263B2 (en) | 2004-03-19 | 2007-06-05 | Oki Electric Industry Co., Ltd. | Semiconductor device with recessed post electrode |
| US7629246B2 (en) * | 2007-08-30 | 2009-12-08 | National Semiconductor Corporation | High strength solder joint formation method for wafer level packages and flip applications |
| KR101009067B1 (en) | 2008-10-20 | 2011-01-18 | 삼성전기주식회사 | Semiconductor package having solder bump and method of manufacturing the same |
| JP2013105951A (en) * | 2011-11-15 | 2013-05-30 | Internatl Business Mach Corp <Ibm> | Device on array arrangement for using partially different solder bump in array consisting of plural solder bumps |
| CN103280437A (en) * | 2013-04-24 | 2013-09-04 | 三星半导体(中国)研究开发有限公司 | Solder ball, ball grid array packaging element comprising same and heat management enhancement method thereof |
| WO2016158030A1 (en) | 2015-03-30 | 2016-10-06 | 株式会社リトルデバイス | Conductive ball |
| JPWO2016158030A1 (en) * | 2015-03-30 | 2017-04-27 | 株式会社リトルデバイス | Conductive ball |
| EP3118857A4 (en) * | 2015-03-30 | 2018-01-24 | Little Device Corporation | Conductive ball |
| US20180240568A1 (en) * | 2015-03-30 | 2018-08-23 | Little Device Corporation | Conductive ball |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3217046B2 (en) | 2001-10-09 |
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