JP2000214487A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to enhance the yield of production by using a metallic film layer which is mainly composed of Mo and contains at least either of Zr and Hf and multilayered metallic films having this metallic film layer and a metallic film layer mainly composed of Al as the constitution layers for at least either of gate wiring and data wiring. SOLUTION: This liquid crystal display device is composed of a substrate having a plurality of the gate wiring 1, a plurality of the data wiring 3 formed to cross a plurality of the gate wiring 1, thin-film transistors(TFTs) 5 formed near the crossing points of the gate wiring 1 and the data wiring 3, a counter substrate facing this substrate and a liquid crystal layer held between the substrate and the counter substrate. The metallic film layer which is mainly composed of Mo and contains at least either of Zr and Hf and the multilayered metallic films having the metallic film layer and the metallic film layer mainly composed of Al are used as the constitution layers for at least either of the gate wiring 1 and the data wiring 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an active matrix type liquid crystal display (TFT-LCD) driven by a thin film transistor (TFT).

[0002]

2. Description of the Related Art The market for a thin film transistor driven liquid crystal display (TFT-LCD) has been expanding as an image display device which can be made thinner, lighter and more precise than a conventional cathode ray tube. TFT-LCD refers to a gate wiring, a data wiring, a thin film transistor formed near an intersection of the gate wiring and the data wiring, a pixel electrode connected to the thin film transistor, a gate insulating film, and an insulating protective film formed on a glass substrate. , A counter substrate, and a liquid crystal layer sandwiched between the glass substrate and the counter substrate.

In recent years, the size of a TFT-LCD screen has been increased,
With the progress of higher definition, demands on wiring performance such as low resistance, adhesion to different materials, contact properties, and low stress are becoming severe. Generally, a metal film is used for the gate wiring and the data wiring. However, all the requirements cannot be satisfied with a conventional single material such as only Al or only Cr. As an example of applying a Mo alloy film (Mo-Cr) as a low-resistance TFT-LCD wiring,
EP 0 680 088 A1 and JP-A-7-301722 are known. Japanese Patent Application Laid-Open No. 10-163463 is known as an example in which a multilayer film made of Al and Mo is applied.

[0004]

The TFT-LCD is thinner and lighter than a cathode ray tube display, and its market is expanding as a display for a notebook computer and a desktop display with a small space. Under these circumstances, the size and resolution of liquid crystal display devices have been increasing, and the requirements for wiring materials, such as low resistance, adhesion with different materials, contact properties, and low stress, have been strict. I have. There are many issues as materials for TFT-LCD wiring,
There are the following. Low specific resistance to prevent display unevenness. Low stress to avoid stress disconnection.

[0005] Low contact resistance with different materials.
Further, the TFT-LCD has a large number of manufacturing steps and is complicated, so that the manufacturing yield is likely to be reduced and there are many problems in the process. The TFT-LCD has a scanning signal line (gate wiring film), a gate insulating film, a semiconductor layer, a data wiring (source, drain wiring film), a pixel electrode film, It has a structure in which a plurality of thin films such as a counter electrode film and an insulating protective film are processed by photolithography.

A TFT-LC having such a complicated structure
In order to produce D with good yield, it is necessary to have high adhesion to the substrate, no hillocks in the heating process, etc. so that there is no short circuit between electrodes, and no reaction between layers when forming a multilayer film. Can be No single material satisfies all of these properties.

For this reason, the multilayer film is used as a comprehensively excellent wiring configuration by utilizing the respective features of the constituent elements. As described below, a multilayer film composed of an Al alloy and Mo has a relationship in which one advantage is the other disadvantage, and can be processed with the same or the same type of etching solution. Al, a typical low-melting point material, has the characteristics of low resistance and low stress and good adhesion to different materials, but has high contact resistance with different materials,
In addition, short-circuit failure due to hillocks is liable to occur due to the low melting point, and process stability is poor due to high reactivity with Si.

On the other hand, Mo has a low contact resistance and a high melting point, so there is no fear of short-circuit failure due to hillocks.
However, it is not sufficiently low to meet the demand for low resistance, and has the disadvantage of extremely poor adhesion to different materials. Poor adhesion means that the target thin film does not exist on the substrate.
o has a fatal defect as a thin film material. Al has good adhesion, but has high contact resistance, so a Mo layer with low contact resistance is used on the contact surface with different materials.
Due to the drawback of poor adhesion of Mo, the multilayer film made of Al and Mo has always had an unsatisfactory wiring configuration with respect to adhesion.

An object of the present invention is to provide a liquid crystal display device having a high production yield by using a Mo-based metal film having improved adhesion to different materials as a component of a TFT-LCD wiring.

[0010]

The above-mentioned objects are achieved by the following items.

(1) A plurality of gate wirings, a plurality of data wirings formed so as to cross the plurality of gate wirings, a thin film transistor formed near an intersection of the gate wirings and the data wirings, and the gate A liquid crystal display device comprising: a substrate having a gate insulating film covering a wiring; a counter substrate facing the substrate; and a liquid crystal layer sandwiched between the substrate and the counter substrate. And at least one of the data wirings, a multilayer metal film, a metal film layer containing at least one of Zr and Hf mainly composed of Mo as a constituent layer, and a metal film layer mainly composed of Al and Hf. A multilayer metal film having a metal film layer is used.

(2) In the multilayer metal film, the upper layer is a metal film mainly composed of Al, and the lower layer is Zr, mainly composed of Mo.
A two-layer film made of a metal film containing any one of Hf is used.

(3) The multilayer metal film includes a two-layer film in which the upper layer is a metal film mainly containing Mo and containing either one of Zr and Hf and the lower layer is a metal film mainly containing Al. Used.

(4) In the multilayer metal film, the upper layer is a metal film mainly containing Mo and containing either Zr or Hf, the intermediate layer is a metal film mainly containing Al, and the lower layer is Uses a three-layer film made of a metal film mainly containing Mo and containing either Zr or Hf.

(5) Zr of the Mo-based metal film
The composition is in the range of 2.0-52.0 at%.

(6) Hf of the Mo-based metal film
The composition is in the range of 0.9 to 35.0 at%.

(7) The Mo-based metal film containing at least one of Zr and Hf is a metal film further containing at least one of Cr, W, Ti, Ta and Nb as an additional element.

(8) As the metal film layer mainly composed of Al, a pure Al film or at least Nd, Z mainly composed of Al
A metal film containing any of r, La, Y, and Sm is used.

(9) A plurality of gate wirings, a plurality of data wirings formed to cross the plurality of gate wirings, a thin film transistor formed near an intersection of the gate wirings and the data wirings, A liquid crystal display device comprising: a substrate having a gate insulating film covering a wiring; a counter substrate facing the substrate; and a liquid crystal layer sandwiched between the substrate and the counter substrate. And a metal film mainly composed of Mo and containing at least one of Zr and Hf as an additive element.

(10) The Zr composition of the metal film mainly composed of Mo of the liquid crystal display device of the item 9 is set to 2.0 to 52.0 at%.

(11) The Hf composition of the metal film mainly composed of Mo in the liquid crystal display device of the item 9 is set to 0.9 to 35.0 at%.

(12) Zr, Hf of the liquid crystal display device of item 9
The metal film mainly containing Mo contains at least one of Cr, W, Ti, Ta, and N as additional elements.
A metal film containing at least one of b is used.

The above object can be achieved by employing such means. The reason is as follows. As compared with the Mo film, the Mo-Zr film and the Mo-Hf film have an increased adhesive force with different materials. The Mo film or the metal film is generally a polycrystalline film, but the Mo-Zr film and the Mo-Hf film are amorphous films or films containing an amorphous layer.
This is the cause of the phenomenon that the adhesive force increases in the Mo-Zr film and the Mo-Hf film. The Mo—Zr system and the Mo—Hf system have a phase diagram in which a eutectic reaction exists, and the atomic radii of Mo, Zr, and Hf are 1.36, 1.62, and 1.60 °, respectively. Since the atomic dimensional ratio of Zr and Hf to γ is large, in these systems, it is difficult to mix different elements and metal compounds and the like are likely to be formed near the grain boundaries. Easy to be.

In general metals, it is difficult to obtain an amorphous phase because of the tendency of atomic diffusion. However, among the elements having the eutectic as described above and having a large atomic dimensional ratio, the amorphous phase may be produced under certain manufacturing conditions. Phases can sometimes be realized. In particular, since the amorphous phase is a thermodynamic non-equilibrium phase, the production conditions under which the amorphous phase can be realized with a thin film having the same composition as the bulk are expanded.

Amorphous metals have the following unique characteristics that cannot be realized with crystalline metals and are caused by their structural and chemical factors. It has high chemical activity, is almost completely elastic-plastic, has high strength and high hardness, has high toughness (stickiness), high fatigue resistance, and has no macro defects (such as grain boundaries). It is an anisotropic material without anisotropy, has mechanical isotropy (has no cleavage surface, easy slip surface, etc.), and its physical properties are continuously variable by continuously changing its composition. Among these many features, the reason that amorphous metal has high chemical activity is that the amorphous phase is a thermodynamic non-equilibrium phase.

On the other hand, the causes of the adhesive force in the lamination of different materials are as follows: the anchor effect as an uneven embedding of the interface, interfacial chemisorption, interfacial physical adsorption, interfacial electric dipole interaction, formation of interfacial mixed reaction phase Are considered.

Under the above preparation, the increase in the adhesion of the amorphous phase occurs by the following mechanism. First, factors on the side of the amorphous phase itself are structural features without long periods and their high chemical activity. On the other hand, the attachment mechanism is related to the anchor effect and interfacial chemisorption. A case where an amorphous film is formed on a substrate will be described. The surface of the substrate generally has irregularities of various sizes, but when the crystal phase grows, nuclei are generated first, but film elements cannot be embedded in the irregularities of the substrate surface smaller than the size of the nucleus. No effective adhesion occurs to the parts.

On the other hand, when the amorphous phase grows, the embedding into the large and small uneven portions proceeds without waste due to the structural feature without a long period, and the adhesive force is generated without waste over the entire interface.

The chemical adsorption energy is about 10 to 100 times larger than the physical adsorption energy, and the high chemical activity of the amorphous phase increases the interlayer adhesion generated at the adsorption center such as a defect on the substrate surface. It is.

The amorphous phase having a high adhesive force as described above has a phase diagram in which a eutectic reaction exists, has a large atomic dimensional ratio, and is easily realized by a mixed system of different elements.
It is also effective to add Cr or W to the film or the Mo-Hf film.

[0031]

(Embodiment 1) Mo-Zr film, Mo
This is an example of examining the adhesion of the -Hf film to a glass substrate. A Mo-Zr film having a Zr composition of 0-60 wt% or a Mo-Hf film having a Hf composition of 0-40 wt% was formed on a glass substrate, and a scratch test was evaluated as an index of the adhesion of the film to the glass substrate. did. The scratch test is a method in which a diamond needle vibrated in a direction parallel to the film surface is brought into contact with the film surface to increase the contact force between the film and the needle. Since peeling occurs, the adhesion of the film to the substrate can be evaluated by this method. Scratch strength of pure Mo film is about 70mN
And the adhesion to the glass substrate is poor.

On the other hand, a pure Cr film is a typical material having good adhesion to a glass substrate, and has a tensile strength of 150-17.
0 mN. The scratch strength at which sufficient adhesion between the film and the glass substrate is obtained is comparable to that of a pure Cr film, that is, about twice that of a pure Mo film. As a standard of sufficient adhesion, a scratch strength of 150 mN or more is appropriate. is there.

The substrate temperature is 130 ° C. by DC sputtering.
The sputtering Ar pressure was set to 0.3 Pa, and a thin film having a thickness of 200 nm was formed on a glass substrate. FIG. 1 shows the prepared Mo.
5 shows the Zr or Hf composition dependence of the scratch strength of the -Zr film and the Mo-Hf film. As shown in FIG. 1, in the Mo—Zr film, the scratch strength increases once by the addition of Zr, and then gradually decreases. When the scratch strength is in the range of 150 mN or more, the addition amount of Zr is 2.0 to 52 at%. It is.

On the other hand, even in the Mo-Hf film, the scratch strength increases once by the addition of Hf and then gradually decreases. When the scratch strength is in the range of 150 mN or more, the addition amount of Hf is 0.9-35 at%. is there. In other words, by forming a Mo—Zr film with an added amount of Zr of 2.0 to 52 at% or a Mo—Hf film with an added amount of Hf of 0.9 to 35 at% on a glass substrate, the adhesion to glass is improved. Very high thin film layers are obtained. These films are SiN film, SiO ₂ film,
The adhesive force to an amorphous Si film or the like is also high. The reason is as described in Means for Solving the Problem.

(Example 2) Subsequently, Mo-Zr / Al-
This is an example in which an Nd / Mo-Zr three-layer film is applied to a gate wiring of a liquid crystal display device of a lateral electric field liquid crystal driving system. Here, the lateral electric field liquid crystal driving method is a method of driving a liquid crystal molecule by applying an electric field in a horizontal direction to a glass substrate surface holding the liquid crystal, and has a feature that a viewing angle can be widened. FIG. 2 is a plan view of a pixel of a manufactured liquid crystal display device and a peripheral portion thereof.
Data wiring 3, drain electrode 4, thin film transistor (T
FT) 5 is shown. However, the counter electrode 2 is formed from the same thin film as the gate wiring 1 by photolithography, and the drain electrode 4 is formed from the same thin film as the data wiring 3 by photolithography.

FIG. 3 is a sectional view taken along the line AA '. The display panel has a gate wiring lower layer 7, a gate wiring intermediate layer 8, a gate wiring upper layer 9,
A counter electrode lower layer 10, a counter electrode intermediate layer 11, a counter electrode upper layer 12, a gate insulating film 13, an intrinsic semiconductor 14, an n-type semiconductor 15, a data line 3, a drain electrode 4, a protective film 16, and an alignment film 17; A color filter 19 and a black matrix 2 on one surface of the opposite glass substrate 18.
0, a counter substrate protection film 21, and a counter substrate alignment film 22; a liquid crystal layer 23 sandwiched between the TFT glass substrate 6 and the counter glass substrate 18; a deflecting plate 24;
5 is comprised.

FIG. 4 is a flowchart of the manufacturing process. First, a 50 nm-thick Mo-30 at% is sequentially formed on the entire surface of one side of the TFT glass substrate 6 by DC sputtering.
A Zr film 7, an Al-2 at% Nd film 8 having a thickness of 300 nm,
A Mo-30 at% Zr film 9 having a thickness of 50 nm is formed.
The substrate temperature is 120 ° C. and the Ar pressure is 0.3 Pa. A first photo-process (coating a photoresist, performing selective pattern exposure using a mask, and performing pattern development: this operation is hereinafter referred to as a photo process) is performed on the alloy film, and then a mixed acid (phosphoric acid: nitric acid) : Acetic acid: pure water = 65: 9.6: 3.4:
(25.3 vol%, 40 ° C.) to selectively etch the metal three-layer film to form a gate wiring lower layer 7, a gate wiring intermediate layer 8,
A pattern of the gate wiring upper layer 9 and the counter electrode 2 is formed.

Next, the SiN gate insulating film 1 is formed on the gate wiring and the counter electrode 2 pattern on the TFT glass substrate 6.
3 (200 nm thick), intrinsic semiconductor 14 (amorphous Si,
N-type semiconductor 15 (amorphous Si, thickness 35)
nm) in a plasma CVD apparatus, and the substrate temperature is set to 300 ° C.
As a continuous production. Here, a second photo process is performed, and the intrinsic semiconductor 14 and the N-type semiconductor 15 are dry-etched (C
Pattern processing is performed using a mixed gas of Cl ₃ and O ₂ ).

Subsequently, a Cr film having a thickness of 200 nm was
It is formed by a sputtering method (substrate temperature 130 ° C., Ar pressure 0.3 P). A third photo step is performed, and then C 2 is added with a ceric ammonium nitrate aqueous solution (15 wt%, 30 ° C.).
The data wiring 3 and the drain electrode 4 are formed by selectively etching the r alloy film. Further, an SiN protective film 16 (500 nm thick) is formed using a plasma CVD apparatus.

FIG. 5 is a plan view schematically showing a peripheral portion of the display panel. When a display panel is manufactured, liquid crystal is sealed from an opening 27 of a seal pattern 26 in which the TFT glass substrate 6 and the counter glass substrate 18 are bonded. Screen part 2
8, a gate terminal group 29 and a data terminal group 30 are arranged as shown in the figure. A plurality of gate lines 1 (scanning signal lines or horizontal signal lines) parallel to each other are provided on the TFT substrate 6.
And data lines 3 (video signal lines or vertical signal lines) which are formed in parallel with each other and intersect with the gate lines 1. A region surrounded by two adjacent gate lines 1 and two adjacent data lines is a pixel region.

The liquid crystal panel manufactured as described above has a Mo-Z film having a large adhesive force with glass on the gate wiring portion.
Since the r film is used, there is no occurrence of defects during film processing. M
Instead of the o-Zr film, a Mo-Hf film, Mo-Zr-C
r film, Mo-Hf-Cr film, Mo-Zr-W film, Mo-
Hf-W film, Mo-Zr-Ti film, Mo-Hf-Ti
Film, Mo-Zr-Ta film, Mo-Hf-Ta film, Mo-
A Zr-Nb film, Mo-Hf-Nb film, or the like may be used. Also,
Al and Zr, La, Y, Sm instead of Al-Nd film
Or an Al alloy composed of at least one of the above.

Example 3 Subsequently, Mo-Zr / Al-
This is an example in which an Nd / Mo-Zr three-layer film is applied to a gate wiring of a liquid crystal display device of a vertical electric field driving system. FIG. 6 shows a planar pattern of one pixel of the liquid crystal display device and a peripheral portion thereof. The gate wiring 1, the data wiring 3, the light-shielding film 31, the transparent pixel electrode 32, and the TFT 5 among the components of the pixel are shown. FIG. 7 is a sectional view taken along the line AA '.

The display panel has a gate wiring lower layer 7, a gate wiring intermediate layer 8, a gate wiring upper layer 9, a gate insulating film 13, an intrinsic semiconductor 14, an N-type semiconductor 15, a data wiring 3, and a protection layer on one surface of a TFT glass substrate 6. A film 16, a transparent pixel electrode 32, an alignment film 17, and a counter glass substrate 1.
8, a color filter 19, a counter substrate protection film 21, a common transparent electrode 33, and a counter substrate alignment film 22 formed on one surface; a liquid crystal layer 23 sandwiched between the TFT glass substrate 6 and the counter glass substrate 18; The deflecting plate 24 and the opposing deflecting plate 2
5 is comprised.

FIG. 8 is a flowchart of the manufacturing process. First, a 50 nm-thick Mo-30 at% Z is sequentially formed on the entire surface of one side of the TFT glass substrate 6 by DC sputtering.
An r film 7, an Al-2 at% Nd film 8 having a thickness of 300 nm, and a Mo-30 at% Zr film 9 having a thickness of 50 nm are formed.
The substrate temperature is 130 ° C. and the Ar pressure is 0.3 Pa.

The first photo step (by applying a photoresist,
A selective pattern exposure using a mask is performed, and until pattern development: this operation is hereinafter referred to as a photo step) is performed on the alloy film, and then a mixed acid (phosphoric acid: nitric acid: acetic acid: pure water = 65:
9.6: 3.4: 25.3vol%, 40 ° C).
The gate wiring 1 and the light shielding film 3 are selectively etched by the layer film.
The pattern 1 is prepared.

Next, an SiN gate insulating film 13 (200 nm thick) and an intrinsic semiconductor 14 (amorphous S) are formed on the gate wiring 1 and the pattern of the light shielding film 31 on the TFT glass substrate 6.
i, a thickness of 200 nm) and an N-type semiconductor 15 (amorphous Si, a thickness of 35 nm) with a plasma CVD apparatus at a substrate temperature of 3
Continuous production is performed at 00 ° C.

Here, a second photo process is performed to pattern the intrinsic semiconductor 14 and the N-type semiconductor 15 by dry etching (using a mixed gas of CCl ₃ and O ₂ ). Subsequently, a Cr film having a thickness of 200 nm is formed at a substrate temperature of 130 ° C. by a DC sputtering method. A third photo step is performed, and then a ceric ammonium nitrate aqueous solution (15 wt%, 40 wt.
° C.) by forming a data wire 3 and selects the etching of the Cr film, a data wiring pattern as a mask to pattern processing an N-type semiconductor 15 by dry etching (CCl ₃ and O ₂ mixed gas used). Further, an SiN protective film 16 (500 nm thick) is formed using a plasma CVD apparatus.

The protection film 16 is dry-etched by a fourth photo process to form a through hole exposing the data wiring 3 on the spot. Here, a tin-added indium oxide (ITO) transparent pixel electrode 32 is formed by a DC sputtering apparatus using [In ₂ O ₃ -SnO ₂ (10 wt%)] as a sputtering target. The substrate temperature was 215 ° C., and a mixed gas of Ar and O ₂ was used as a sputtering gas. A fifth photo process is performed, and the transparent pixel electrode 32 is etched at 30 ° C. using HBr to form a predetermined pattern. Thus, a TFT substrate of the liquid crystal display device is manufactured.

FIG. 5 is a plan view schematically showing a peripheral portion of the display panel. When a display panel is manufactured, liquid crystal is sealed from an opening 27 of a seal pattern 26 in which the TFT glass substrate 6 and the counter glass substrate 18 are bonded. Screen part 2
For 8, the gate terminal group 29 and the drain terminal group 30 are arranged as shown in the figure. A plurality of gate lines 1 (scanning signal lines or horizontal signal lines) parallel to each other and data lines 3 (video signal lines or vertical signal lines) parallel to each other are formed on the TFT substrate 6. Is formed. Two adjacent gate lines 1 and two adjacent gate lines 1
A region surrounded by the data lines is a pixel region, and a transparent pixel electrode 32 is formed on almost the entire surface.

The liquid crystal panel manufactured as described above has a Mo-Z film having a large adhesive force with glass on the gate wiring portion.
Since the r film is used, there is no occurrence of defects during film processing. M
Instead of the o-Zr film, a Mo-Hf film, Mo-Zr-C
r film, Mo-Hf-Cr film, Mo-Zr-W film, Mo-
Hf-W film, Mo-Zr-Ti film, Mo-Hf-Ti
Film, Mo-Zr-Ta film, Mo-Hf-Ta film, Mo-
A Zr-Nb film, Mo-Hf-Nb film, or the like may be used. Also,
Al and Zr, La, Y, Sm instead of Al-Nd film
Or an Al alloy composed of at least one of the above.

[0051]

According to the present invention, Mo- has good adhesion to the underlayer.
By using a Zr film or a Mo—Hf film as a wiring material, there is an effect that a high-yield and inexpensive liquid crystal display device can be provided.

[Brief description of the drawings]

FIG. 1 is a characteristic diagram showing the dependence of scratch strength on film composition.

FIG. 2 is a plan view of a pixel of a lateral electric field driving liquid crystal display device and its peripheral portion.

FIG. 3 is a sectional view taken along line AA 'of FIG. 2;

FIG. 4 is a manufacturing flowchart of a lateral electric field driving liquid crystal display device.

FIG. 5 is a schematic plan view of a liquid crystal display device.

FIG. 6 is a plan view of a pixel of a vertical electric field driving liquid crystal display device and its peripheral portion.

FIG. 7 is a sectional view taken along section line AA 'in FIG. 6;

FIG. 8 is a manufacturing flowchart of a vertical electric field driving liquid crystal display device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Gate wiring, 2 ... Counter electrode, 3 ... Data wiring, 4 ...
Drain electrode, 5 ... thin film transistor (TFT), 6 ...
TFT glass substrate, 7: gate wiring lower layer, 8: gate wiring intermediate layer, 9: gate wiring upper layer, 10: counter electrode lower layer,
DESCRIPTION OF SYMBOLS 11 ... Counter electrode intermediate layer, 12 ... Counter electrode upper layer, 13 ... Gate insulating film, 14 ... Intrinsic semiconductor, 15 ... N-type semiconductor, 1
6 Protective film, 17 Alignment film, 18 Counter glass substrate, 1
9: color filter, 20: black matrix, 21
... counter substrate protection film, 22 ... counter substrate alignment film, 23 ... liquid crystal layer, 24 ... deflection plate, 25 ... counter deflection plate, 26 ... seal pattern, 27 ... opening, 28 ... screen portion, 29 ... gate terminal group, Reference numeral 30 denotes a data terminal group, 31 denotes a light-shielding film, 32 denotes a transparent pixel electrode, and 33 denotes a common pixel electrode.

Continued on the front page (72) Inventor Katsura Tamura 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Inside Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor Yuichi Harano 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Inside Hitachi Research Laboratory, Hitachi, Ltd. (72) Kenichi Onizawa 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Inside Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor, Toshiki Kaneko 3300 Hayano, Mobara City, Chiba Prefecture F-term in the Electronic Device Division of Hitachi, Ltd. (reference) NN24 NN35 QQ04 QQ05 QQ09

Claims (12)

[Claims] A plurality of gate lines, a plurality of data lines formed so as to intersect the plurality of gate lines, a thin film transistor formed near an intersection of the gate lines and the data lines, and the gate line. A substrate having a gate insulating film covering the substrate, a counter substrate facing the substrate, and a liquid crystal layer sandwiched between the substrate and the counter substrate. At least one of the data wirings is a multilayer metal film,
At least Zr, mainly composed of Mo,
A liquid crystal display device comprising: a multi-layer metal film including a metal film layer containing any one of Hf and a metal film layer and a metal film layer mainly composed of Al. 2. The liquid crystal display device according to claim 1, wherein the multilayer metal film is a two-layer film, the upper layer is a metal film mainly composed of Al, and the lower layer is one of Zr and Hf mainly composed of Mo. A liquid crystal display device comprising a metal film containing at least one of the above. 3. The liquid crystal display device according to claim 1, wherein the multi-layered metal film is a two-layered film, and the upper layer is composed mainly of Mo.
f is a metal film containing any one of f
1. A liquid crystal display device comprising a metal film mainly composed of l. 4. The liquid crystal display device according to claim 1, wherein the multi-layered metal film is a three-layered metal film, and the upper layer is composed mainly of Mo.
a metal film containing any one of Zr and Hf, wherein the intermediate layer is a metal film mainly containing Al, and the lower layer is a metal film containing one of Zr and Hf mainly containing Mo. A liquid crystal display device, comprising: 5. The liquid crystal display device according to claim 1, wherein the metal film mainly composed of Mo is made of Z.
A liquid crystal display device, wherein the r composition is in the range of 2.0-52.0 at%. 6. The liquid crystal display device according to claim 1, wherein the metal film mainly composed of Mo is made of H.
A liquid crystal display device characterized by having an f composition in the range of 0.9 to 35.0 at%. 7. The liquid crystal display device according to claim 1, wherein the Mo-based metal film containing at least one of Zr and Hf further comprises Cr, as an additional element. A liquid crystal display device comprising a metal film containing at least one of W, Ti, Ta, and Nb. 8. The liquid crystal display device according to claim 1, wherein the metal film layer mainly composed of Al is a pure Al film or at least Nd, Zr, L mainly composed of Al.
A comprising a metal film containing any of a, Y, and Sm.
1. A liquid crystal display device comprising a metal film mainly composed of l. 9. A plurality of gate wirings, a plurality of data wirings formed so as to cross the plurality of gate wirings, a thin film transistor formed near an intersection of the gate wirings and the data wirings, and the gate wirings A substrate having a gate insulating film covering the substrate, a counter substrate facing the substrate, and a liquid crystal layer sandwiched between the substrate and the counter substrate. At least one of the data wirings is a metal film mainly composed of Mo, and is a metal film containing at least one of Zr and Hf as an additional element thereof. 10. The liquid crystal display device according to claim 9, wherein the metal film mainly composed of Mo has a Zr composition of 2.0-.
A liquid crystal display device having a range of 52.0 at%. 11. The liquid crystal display device according to claim 9, wherein the metal film mainly composed of Mo has an Hf composition of 0.9-.
A liquid crystal display device having a range of 35.0 at%. 12. The liquid crystal display device according to claim 9, wherein the Mo-based metal film containing at least one of Zr and Hf further includes Cr, W,
A liquid crystal display device comprising a metal film containing at least one of Ti, Ta, and Nb.