JP2000206199A - Lsi designing technique for packaging inspection - Google Patents

Lsi designing technique for packaging inspection

Info

Publication number
JP2000206199A
JP2000206199A JP11010151A JP1015199A JP2000206199A JP 2000206199 A JP2000206199 A JP 2000206199A JP 11010151 A JP11010151 A JP 11010151A JP 1015199 A JP1015199 A JP 1015199A JP 2000206199 A JP2000206199 A JP 2000206199A
Authority
JP
Japan
Prior art keywords
lsi
inspection
circuit
occurred
failure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11010151A
Other languages
Japanese (ja)
Inventor
Shinichi Murakami
慎一 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11010151A priority Critical patent/JP2000206199A/en
Publication of JP2000206199A publication Critical patent/JP2000206199A/en
Pending legal-status Critical Current

Links

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To enable to detect at which terminal an anomaly has occurred by providing as inspecting circuit inside a LSI and detecting that the logical level of an unused input terminal becomes anomalous due to a mounting failure, etc. SOLUTION: The logical level of an output signal 'DCT' of a multiple-input NAND circuit 6 is observed. It is normal when the logical level is 'low', and an anomaly has occurred when it is 'high'. In the case that 'DCT' is 'high', only output signals 'DCT(2n-1)' (odd numbers) of an NAND circuit 5 are observed for specifying failure locations. In the case that only 'DCT3' is, for example, 'high' here, the location of 'NC-IN2' or 'NC-IN3' is suspected of developing a failure. 'DCT2' and 'DCT4' are further observed, and a failure has occurred in 'NC-IN2' in the case that 'DCT2' = 'high' and that 'DCT4' = 'low'. In the case that 'DCT4' = 'high' and that 'DCT2' ='low', a failure has occurred in 'NC-IN3'.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、実装検査のための
LSI設計手法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LSI design method for mounting inspection.

【0002】[0002]

【従来の技術】図7は従来のLSI(大規模集積回路)
のブロック図である。1はユーザが希望する機能を自由
に設計可能なLSI、4はLSI1の機能の中枢である
内部回路である。
2. Description of the Related Art FIG. 7 shows a conventional LSI (large-scale integrated circuit).
It is a block diagram of. Reference numeral 1 denotes an LSI capable of freely designing a function desired by a user, and reference numeral 4 denotes an internal circuit which is the center of the function of the LSI 1.

【0003】LSI1において未使用の入力端子が存在
すれば、論理レベル(電圧レベル)を安定させるため
に、その端子に対してプルアップまたはプルダウンを施
し、論理レベルを「High」レベルまたは「Low」
レベルに固定する必要がある。しかし、LSI1の実装
不良が発生した場合に、未使用の入力端子の論理レベル
を安定化させることが不可能となる場合も発生する。
If there is an unused input terminal in the LSI 1, in order to stabilize the logic level (voltage level), the terminal is subjected to pull-up or pull-down, and the logic level is changed to "High" level or "Low".
Must be fixed to level. However, when the mounting failure of the LSI 1 occurs, there may be a case where it becomes impossible to stabilize the logic level of the unused input terminal.

【0004】[0004]

【発明が解決しようとする課題】上記従来のLSIの設
計手法では、未使用の入力端子においてなんらかの原因
で不良が発生した場合に論理レベルが不安定となり、L
SI自体の動作へ悪影響を与えてしまう恐れがある。し
かも、どのような原因でこのような事態が発生したのか
の予測が困難である。このように、未使用の入力端子の
論理レベルが不安定になった場合、その原因が判らず対
策を講じる事が不可能となるという問題点を有してい
る。
In the above-described conventional LSI design method, when a failure occurs at an unused input terminal for some reason, the logic level becomes unstable, and the L level becomes unstable.
The operation of the SI itself may be adversely affected. In addition, it is difficult to predict the cause of such a situation. As described above, when the logic level of the unused input terminal becomes unstable, there is a problem that it is impossible to take a countermeasure because the cause is not known.

【0005】そこで本発明は、LSIにおいて未使用の
入力端子の論理レベル(電圧レベル)を固定している場
合に、実装不良等の原因で論理レベルが不安定になった
ことを検出でき、しかもどの端子で異常が発生している
かを検出可能となる実装検査のためのLSI設計手法を
提供することを目的とする。
Accordingly, the present invention can detect that the logic level has become unstable due to a mounting failure or the like when the logic level (voltage level) of an unused input terminal in an LSI is fixed. It is an object of the present invention to provide an LSI design method for mounting inspection that can detect which terminal has an abnormality.

【0006】[0006]

【課題を解決するための手段】本発明は、LSIの内部
に検査回路を設け、前記検査回路にて前記LSIの未使
用の入力端子の論理レベルが実装不良等の原因で異常に
なった場合、その事を検出することが可能であるととも
に、どこの端子において異常が発生しているかを検出可
能とすることを特徴とする実装検査のためのLSI設計
手法である。
According to the present invention, a test circuit is provided in an LSI, and when the logic level of an unused input terminal of the LSI becomes abnormal due to a mounting defect or the like in the test circuit. This is an LSI design method for mounting inspection, characterized in that it is possible to detect that fact and to detect at which terminal an abnormality has occurred.

【0007】この構成により、LSIにおいて未使用の
入力端子の論理レベル(電圧レベル)を固定している場
合に、実装不良等の原因で論理レベルが不安定になった
ことを検出でき、しかもどの端子で異常が発生している
かを検出可能となる実装検査のためのLSI設計手法を
実現できる。
With this configuration, when the logic level (voltage level) of an unused input terminal in an LSI is fixed, it is possible to detect that the logic level has become unstable due to a mounting failure or the like. An LSI design method for mounting inspection that can detect whether an abnormality has occurred in a terminal can be realized.

【0008】[0008]

【発明の実施の形態】請求項1記載の発明は、LSIの
内部に検査回路を設け、前記検査回路にて前記LSIの
未使用の入力端子の論理レベルが実装不良等の原因で異
常になった場合、その事を検出することが可能であると
ともに、どこの端子において異常が発生しているかを検
出可能とすることを特徴とする実装検査のためのLSI
設計手法である。
According to the first aspect of the present invention, an inspection circuit is provided inside an LSI, and the logic level of an unused input terminal of the LSI becomes abnormal due to a mounting defect or the like in the inspection circuit. In this case, it is possible to detect the occurrence of an abnormality and to detect at which terminal an abnormality has occurred.
This is a design method.

【0009】請求項2記載の発明は、前記検査回路に論
理回路を使用し、前記LSIの端子の本数分だけ論理回
路を用意することで、どこの端子において異常が発生し
ているかを検出可能とする。
According to a second aspect of the present invention, it is possible to detect at which terminal an abnormality has occurred by using a logic circuit for the inspection circuit and preparing the same number of logic circuits as the number of terminals of the LSI. And

【0010】請求項3記載の発明は、2つのモード(検
査を行うモードと、通常動作状態のモード)を切り替え
ることの可能な切替回路を設けた。
According to a third aspect of the present invention, there is provided a switching circuit capable of switching between two modes (a mode for performing an inspection and a mode in a normal operation state).

【0011】上記構成において、検査回路にてLSIの
未使用の入力端子の論理レベルが異常な場合にその事を
検出することができ、しかもどの端子で異常が発生して
いるかを検出可能となる。また、検査手順を工夫するこ
とにより、異常の発生している端子を絞り込みながら検
査を行うので、検査時間の短縮も可能となる。
In the above configuration, when the logic level of the unused input terminal of the LSI is abnormal in the inspection circuit, it can be detected, and moreover, which terminal is abnormal can be detected. . Further, by devising the inspection procedure, the inspection is performed while narrowing down the terminal in which the abnormality has occurred, so that the inspection time can be reduced.

【0012】図1は本発明の一実施の形態のLSIのブ
ロック図、図2は同動作を示す回路図、図3は同NAN
D回路の真理値表を示す図、図4は同動作(検査手順)
を示すフローチャート、図5は同検査回路の真理値表を
示す図、図6は同動作を示す回路図である。
FIG. 1 is a block diagram of an LSI according to an embodiment of the present invention, FIG. 2 is a circuit diagram showing the same operation, and FIG.
FIG. 4 shows a truth table of the D circuit, and FIG. 4 shows the same operation (inspection procedure)
FIG. 5 is a diagram showing a truth table of the inspection circuit, and FIG. 6 is a circuit diagram showing the same operation.

【0013】図1において、1はユーザが希望する機能
を自由に設計可能なLSI、2は未使用の入力端子の論
理レベルが異常な場合にその事を検出可能な検査回路、
3は出力端子を通常動作モード時と検査モード時とで使
い分けるためにモードの切り替えを行う切替回路、4は
LSI1の機能の中枢である内部回路である。
In FIG. 1, reference numeral 1 denotes an LSI capable of freely designing a function desired by a user, 2 denotes an inspection circuit capable of detecting when the logical level of an unused input terminal is abnormal,
Reference numeral 3 denotes a switching circuit for switching the output terminal between the normal operation mode and the test mode so as to use the output terminal properly, and reference numeral 4 denotes an internal circuit which is the center of the function of the LSI 1.

【0014】LSI1の動作について、図2、図3、図
4、及び図5を用いて説明する。図2の検査回路におい
て、LSIの未使用入力端子(NC−IN1〜6)の論
理レベルを「High」レベルに固定することを前提と
する。ここで、図3はNAND回路5及び多入力NAN
D回路6の真理値表である。NAND回路は、すべての
入力が「High」であれば、出力が「Low」とな
り、少なくともひとつの入力が「Low」になれば出力
が「High」となる。
The operation of the LSI 1 will be described with reference to FIGS. 2, 3, 4, and 5. In the test circuit of FIG. 2, it is assumed that the logic level of the unused input terminals (NC-IN1 to NC-IN6) of the LSI is fixed at the “High” level. Here, FIG. 3 shows the NAND circuit 5 and the multi-input NAN.
6 is a truth table of the D circuit 6. The output of the NAND circuit becomes “Low” when all inputs are “High”, and the output becomes “High” when at least one input becomes “Low”.

【0015】図4のフローチャートと図5の検査回路の
真理値表を用いて、具体的な検査手順について以下説明
する。まず、多入力NAND回路6の出力信号である”
DCT”信号の論理レベルを観測し(ステップ1)、
「Low」であれば正常であり、「High」であれば
なんらかの異常(実装不良等)が発生していると考えら
れる(ステップ2)。次に、”DCT”信号が「Hig
h」である場合、不良発生箇所を特定するためにNAN
D回路5の出力信号である、”DCT(2n−1)”信
号(奇数番号)のみ観測する(ステップ3,ステップ
4)。ここで、例えば”DCT3”の信号のみ「Hig
h」になっていたとすると(ステップ5)、不良発生箇
所の疑いがあるのは”NC−IN2”または”NC−I
N3”になると考えられる。
A specific inspection procedure will be described below with reference to the flowchart of FIG. 4 and the truth table of the inspection circuit of FIG. First, the output signal of the multi-input NAND circuit 6 is "
Observe the logic level of the DCT "signal (step 1),
If "Low", it is normal, and if "High", it is considered that some abnormality (such as mounting failure) has occurred (step 2). Next, the “DCT” signal is “Hig
h ”, a NAN is used to identify the location where the defect has occurred.
Only the "DCT (2n-1)" signal (odd number), which is the output signal of the D circuit 5, is observed (steps 3 and 4). Here, for example, only the signal of “DCT3” is “Hig
h "(step 5), it is" NC-IN2 "or" NC-I "
N3 ".

【0016】更に、不良箇所の特定のため、”DCT
3”信号の前後の信号である”DCT2”と”DCT
4”の信号を観測する(ステップ6)。”DCT2”=
「High」かつ”DCT4”=「Low」であれば”
NC−IN2”において不良が発生していると考えられ
(ステップ7,ステップ8)、”DCT4”=「Hig
h」かつ”DCT2”=「Low」であれば”NC−I
N3”において不良が発生していると考えられる(ステ
ップ9,ステップ10)。
Furthermore, in order to specify a defective portion, "DCT"
3 “DCT2” and “DCT” before and after the signal.
4 is observed (step 6). "DCT2" =
If “High” and “DCT4” = “Low”, “
It is considered that a defect has occurred in “NC-IN2” (steps 7 and 8), and “DCT4” = “High”
h ”and“ DCT2 ”=“ Low ”, then“ NC-I ”
It is considered that a failure has occurred in N3 ″ (steps 9 and 10).

【0017】このように、”DCT”信号及び”DCT
(n)”信号を観測することにより、「High」レベ
ルに固定されている未使用の入力端子の中で、どの端子
が「Low」レベルになっているかを検出することが可
能となり、不良箇所の特定が容易となる。しかも、異常
の発生している端子を絞り込みながら検査を行うので、
検査時間の短縮も可能となる。
As described above, the "DCT" signal and the "DCT"
By observing the "(n)" signal, it is possible to detect which terminal is at the "Low" level among the unused input terminals fixed at the "High" level. Can be easily identified. In addition, since the inspection is performed while narrowing down the terminal where the abnormality has occurred,
Inspection time can also be reduced.

【0018】また、図1の出力端子を通常動作状態にて
使用する場合、切替回路3を用いて、通常動作モードに
切り替える必要がある。図6にて説明を行うと、”SE
LECT”信号によって、通常動作状態か検査状態かを
切り替えることが可能となるが、例えば、”SELEC
T”信号を「High」レベルにしたときに、通常の信
号”SIG1〜7”を”OUT1〜7”から出力し、”
SELECT”信号を「Low」レベルにしたときは、
検査信号”DCT1〜6”及び”DCT”を”OUT1
〜7”から出力することになる。このように、”SEL
ECT”信号によって、通常動作状態と検査状態を切り
替えることが可能となる。
When the output terminal of FIG. 1 is used in a normal operation state, it is necessary to use the switching circuit 3 to switch to the normal operation mode. The description with reference to FIG.
It is possible to switch between the normal operation state and the inspection state by the “LECT” signal.
When the “T” signal is set to “High” level, normal signals “SIG1 to 7” are output from “OUT1 to 7”, and “
When the “SELECT” signal is set to “Low” level,
The inspection signals “DCT1 to 6” and “DCT” are output to “OUT1”.
7 is output as described above.
The ECT "signal makes it possible to switch between the normal operation state and the inspection state.

【0019】[0019]

【発明の効果】以上説明したように本発明によれば、L
SIにおいて未使用の入力端子の論理レベル(電圧レベ
ル)を固定している場合に、実装不良等の原因で論理レ
ベルが不安定になったことを検出でき、しかもどの端子
で異常が発生しているかを検出可能となる。また、検査
手順を工夫することで、異常の発生している端子を絞り
込みながら検査を行うので、検査時間の短縮も可能とな
る。更に、検査状態と通常動作状態を切替可能となる。
As described above, according to the present invention, L
When the logic level (voltage level) of an unused input terminal is fixed in the SI, it is possible to detect that the logic level has become unstable due to a mounting failure or the like. Can be detected. Further, by devising the inspection procedure, the inspection is performed while narrowing down the terminal in which the abnormality has occurred, so that the inspection time can be reduced. Further, it is possible to switch between the inspection state and the normal operation state.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態のLSIのブロック図FIG. 1 is a block diagram of an LSI according to an embodiment of the present invention;

【図2】本発明の一実施の形態の動作を示す回路図FIG. 2 is a circuit diagram showing the operation of one embodiment of the present invention.

【図3】本発明の一実施の形態のNAND回路の真理値
表を示す図
FIG. 3 is a diagram showing a truth table of the NAND circuit according to one embodiment of the present invention;

【図4】本発明の一実施の形態の動作(検査手順)を示
すフローチャート
FIG. 4 is a flowchart showing an operation (inspection procedure) according to the embodiment of the present invention;

【図5】本発明の一実施の形態の検査回路の真理値表を
示す図
FIG. 5 is a diagram showing a truth table of the test circuit according to the embodiment of the present invention;

【図6】本発明の一実施の形態の動作を示す回路図FIG. 6 is a circuit diagram showing the operation of one embodiment of the present invention.

【図7】従来のLSIのブロック図FIG. 7 is a block diagram of a conventional LSI.

【符号の説明】[Explanation of symbols]

1 LSI 2 検査回路 3 切替回路 4 内部回路 5 NAND回路 6 多入力NAND回路 DESCRIPTION OF SYMBOLS 1 LSI 2 Inspection circuit 3 Switching circuit 4 Internal circuit 5 NAND circuit 6 Multi-input NAND circuit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】LSIの内部に検査回路を設け、前記検査
回路にて前記LSIの未使用の入力端子の論理レベルが
実装不良等の原因で異常になった場合、その事を検出す
ることが可能であるとともに、どこの端子において異常
が発生しているかを検出可能とすることを特徴とする実
装検査のためのLSI設計手法。
An inspection circuit is provided inside an LSI, and when the logic level of an unused input terminal of the LSI becomes abnormal due to a mounting defect or the like, the inspection circuit detects that fact. An LSI design method for mounting inspection, wherein the method is capable of detecting at which terminal an abnormality has occurred, as well as possible.
【請求項2】前記検査回路に論理回路を使用し、前記L
SIの端子の本数分だけ論理回路を用意することで、ど
この端子において異常が発生しているかを検出可能とす
ることを特徴とする請求項1記載の実装検査のためのL
SI設計手法。
2. A test circuit comprising a logic circuit,
2. The L for mounting inspection according to claim 1, wherein a logic circuit is prepared by the number of SI terminals to detect which terminal is abnormal.
SI design method.
【請求項3】2つのモード(検査を行うモードと、通常
動作状態のモード)を切り替えることの可能な切替回路
を設けたことを特徴とする請求項1記載の実装検査のた
めのLSI設計手法。
3. An LSI design method for mounting inspection according to claim 1, further comprising a switching circuit capable of switching between two modes (a mode for performing an inspection and a mode for a normal operation state). .
JP11010151A 1999-01-19 1999-01-19 Lsi designing technique for packaging inspection Pending JP2000206199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11010151A JP2000206199A (en) 1999-01-19 1999-01-19 Lsi designing technique for packaging inspection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11010151A JP2000206199A (en) 1999-01-19 1999-01-19 Lsi designing technique for packaging inspection

Publications (1)

Publication Number Publication Date
JP2000206199A true JP2000206199A (en) 2000-07-28

Family

ID=11742287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11010151A Pending JP2000206199A (en) 1999-01-19 1999-01-19 Lsi designing technique for packaging inspection

Country Status (1)

Country Link
JP (1) JP2000206199A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511507B2 (en) 2005-07-15 2009-03-31 Fujitsu Limited Integrated circuit and circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511507B2 (en) 2005-07-15 2009-03-31 Fujitsu Limited Integrated circuit and circuit board

Similar Documents

Publication Publication Date Title
JP2003098225A (en) Semiconductor integrated circuit
JP2007333538A (en) Test circuit, selector and semiconductor integrated circuit
US20050172188A1 (en) Diagnostic method for detection of multiple defects in a Level Sensitive Scan Design (LSSD)
JP4265934B2 (en) Scan campus circuit, logic circuit including the same, and integrated circuit test method
JP2006234512A (en) Semiconductor integrated circuit and method of testing semiconductor integrated circuit
EP0151694B1 (en) Logic circuit with built-in self-test function
JP2000206199A (en) Lsi designing technique for packaging inspection
JP5796404B2 (en) Semiconductor circuit and test method
JP2007328852A (en) Semiconductor device
JPH09211076A (en) Circuit-board inspecting apparatus and semiconductor circuit
JP2002139546A (en) Test circuit
JP2773148B2 (en) Circuit design method for testability
JP2010078490A (en) Semiconductor device
US7716544B2 (en) Path data transmission unit
JP2008026074A (en) Ic test method and ic
JPH0772219A (en) Semiconductor logic chip
JP2591470B2 (en) Signal processing device
JPH07151830A (en) Fault detection circuit
JPH1152019A (en) Semiconductor integrated circuit
JPH10124564A (en) Inspection-facilitated designing method, bus error-evaded designing method and integrated circuit
JP3531635B2 (en) Semiconductor integrated circuit device
JP2004069642A (en) Semiconductor integrated circuit device
JP2000338188A (en) Testing circuit for semiconductor integrated circuit
JP2000304823A (en) Integrated circuit and its fault detecting system
JP2008135117A (en) Semiconductor device