JP2000200815A5 - - Google Patents

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Publication number
JP2000200815A5
JP2000200815A5 JP1999358754A JP35875499A JP2000200815A5 JP 2000200815 A5 JP2000200815 A5 JP 2000200815A5 JP 1999358754 A JP1999358754 A JP 1999358754A JP 35875499 A JP35875499 A JP 35875499A JP 2000200815 A5 JP2000200815 A5 JP 2000200815A5
Authority
JP
Japan
Prior art keywords
probe
probe head
temperature
contact surface
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999358754A
Other languages
English (en)
Japanese (ja)
Other versions
JP4671142B2 (ja
JP2000200815A (ja
Filing date
Publication date
Priority claimed from US09/213,925 external-priority patent/US6110288A/en
Application filed filed Critical
Publication of JP2000200815A publication Critical patent/JP2000200815A/ja
Publication of JP2000200815A5 publication Critical patent/JP2000200815A5/ja
Application granted granted Critical
Publication of JP4671142B2 publication Critical patent/JP4671142B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP35875499A 1998-12-17 1999-12-17 半導体ウエハの処理装置、温度測定用プローブ及びその温度測定方法 Expired - Fee Related JP4671142B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US213925 1998-12-17
US09/213,925 US6110288A (en) 1998-12-17 1998-12-17 Temperature probe and measurement method for low pressure process

Publications (3)

Publication Number Publication Date
JP2000200815A JP2000200815A (ja) 2000-07-18
JP2000200815A5 true JP2000200815A5 (cg-RX-API-DMAC7.html) 2007-05-10
JP4671142B2 JP4671142B2 (ja) 2011-04-13

Family

ID=22797057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35875499A Expired - Fee Related JP4671142B2 (ja) 1998-12-17 1999-12-17 半導体ウエハの処理装置、温度測定用プローブ及びその温度測定方法

Country Status (4)

Country Link
US (1) US6110288A (cg-RX-API-DMAC7.html)
EP (1) EP1014058B1 (cg-RX-API-DMAC7.html)
JP (1) JP4671142B2 (cg-RX-API-DMAC7.html)
DE (1) DE69927921T2 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6594780B1 (en) * 1999-10-19 2003-07-15 Inasoft, Inc. Operating system and data protection
US7080940B2 (en) * 2001-04-20 2006-07-25 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
US6572265B1 (en) 2001-04-20 2003-06-03 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
US20040012808A1 (en) * 2001-06-04 2004-01-22 Payne David M. Network-based technical support and diagnostics
US6796711B2 (en) * 2002-03-29 2004-09-28 Axcelis Technologies, Inc. Contact temperature probe and process
US6695886B1 (en) * 2002-08-22 2004-02-24 Axcelis Technologies, Inc. Optical path improvement, focus length change compensation, and stray light reduction for temperature measurement system of RTP tool
US7183779B2 (en) * 2004-12-28 2007-02-27 Spectrum Technologies, Inc. Soil probe device and method of making same
US7651269B2 (en) * 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
JP5591565B2 (ja) * 2010-03-12 2014-09-17 東京エレクトロン株式会社 温度測定用プローブ、温度測定システム及びこれを用いた温度測定方法
US9196516B2 (en) * 2013-03-14 2015-11-24 Qualitau, Inc. Wafer temperature measurement tool
WO2022187343A1 (en) * 2021-03-02 2022-09-09 Applied Materials, Inc. Apparatus for fiber optic temperature probe in processing chambers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2093045A6 (cg-RX-API-DMAC7.html) * 1970-05-29 1972-01-28 Commissariat Energie Atomique
US4909314A (en) * 1979-12-21 1990-03-20 Varian Associates, Inc. Apparatus for thermal treatment of a wafer in an evacuated environment
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS59215718A (ja) * 1983-05-23 1984-12-05 Kokusai Electric Co Ltd 半導体基板の赤外線熱処理装置
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
US4907894A (en) * 1988-12-20 1990-03-13 Bnf Metals Technology Centre Surface-temperature sensing method and apparatus
US5755511A (en) * 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US5791782A (en) * 1995-09-21 1998-08-11 Fusion Systems Corporation Contact temperature probe with unrestrained orientation
JP3323927B2 (ja) * 1995-11-02 2002-09-09 株式会社アドバンスト・ディスプレイ 基板表面検査方法および該方法に用いる装置
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
JPH10239165A (ja) * 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement

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