JP2000171822A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To largely decreased waste parts of a substrate when plural active element substrates are obtained by cutting a glass substrate having size corresponding to plural active element substrates. SOLUTION: A power feeding line 13 for anode oxidation extending in the row direction out of power feeding lines 13 for anode oxidation of a lattice shape is provided in the upper edge part of an active element substrate forming region 3, and a power feeding line 13 for anode oxidation extending in the column direction is provided in the left edge part of the active element substrate forming region 3. Since a surplus region is not provided between active element substrate forming regions 3 being adjacent in the vertical direction and a single cut line 2 is formed between them, while a surplus region is not provided between active element substrate forming regions 3 being adjacent in the horizontal direction, a single cut line 2 is formed between them, a glass substrate 1 not be wasted even if it is cut in either of the row direction and the column direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a liquid crystal display device.

[0002]

2. Description of the Related Art When an active matrix type liquid crystal display device is manufactured, a plurality of active element substrates are used as a transparent substrate made of glass or the like as a base of the active element substrate in order to improve productivity. There is a case where a product having a size is prepared, a plurality of components are manufactured at a time until a predetermined process is performed, and then the components are divided into individual units. Further, when manufacturing an active element substrate having a thin film transistor as a switching element, in order to compensate for the withstand voltage of a gate insulating film of the thin film transistor, a gate electrode or the like of the thin film transistor is formed of, for example, Al, and anodizing is performed. An anodic oxide film made of Al-Ox may be formed on the surface of a gate electrode or the like.

FIG. 3 is a view for explaining such a conventional liquid crystal display device, which is entirely formed on a glass substrate having a size corresponding to a plurality of active element substrates, with a part thereof omitted. FIG. 4 shows a partial plan view of an equivalent circuit. The glass substrate 1 having a size corresponding to a plurality of active element substrates is finally cut along a cut line 2 indicated by a dashed line, so that the glass substrate 1 is divided into individual units. In this case, the area surrounded by the cut line 2 is the active element substrate formation area 3, and the surrounding area is the surplus area 4.

In the active element substrate formation region 3, a plurality of pixel electrodes 5 arranged in a matrix, a thin film transistor 6 connected to each of the pixel electrodes 5,
A plurality of scanning lines 7 extending in the row direction for supplying a scanning signal to the thin film transistor 6; a plurality of data lines 8 extending in the column direction for supplying a data signal to the thin film transistor 6; , A plurality of auxiliary capacitance lines 9 forming an auxiliary capacitance portion Cs with the pixel electrodes 5, a plurality of input lines 10 arranged at the lower right in FIG. , And two electrostatic protection elements 12 connected to the short-circuit ring 11 and the respective data lines 8 outside the short-circuit ring 11 are provided.
In the surplus area 4, anodizing power supply lines 13 are provided in a lattice shape.

The right end of the scanning line 7 passes through a semiconductor chip mounting area 14 indicated by a dotted line in FIG. 3 on the right side of the active element substrate forming area 3 and is connected to a power supply line 13 for anodic oxidation. I have. Although not shown, each scanning line 7 is connected to a connection terminal provided in the semiconductor chip mounting area 14, and each connection terminal is face-down bonded with each electrode of the semiconductor chip.
The upper end of the data line 8 is connected to the power supply line 13 for anodic oxidation. The lower end of the data line 8 extends to the inside of the semiconductor chip mounting area 15 indicated by a dotted line in FIG.
Although not shown, each data line 8 is connected to a connection terminal provided in a semiconductor chip mounting area 15, and each connection terminal is face-down bonded with each electrode of the semiconductor chip. The left end of the auxiliary capacitance line 9 is connected to an anodizing power supply line 13 via a common line 16. One end of the input line 10 is a feed line 1 for anodic oxidation.
3 is connected. The other end of the input line 10 extends into the semiconductor chip mounting areas 14 and 15. The upper and lower ends of the short side ring 11 are connected to a common line 16. After a predetermined process, anodizing is performed on the surface of the gate electrode and the like of the thin film transistor 6 by performing anodizing using the anodizing power supply line 13 as one electrode.

[0006]

By the way, in such a conventional active element substrate, a surplus area 4 is provided around the active element substrate forming area 3 during manufacturing, and the surplus area 4 is supplied with an anodizing power supply. Since the line 13 is provided, after cutting along the cut line 2,
The surplus area 4 is discarded. Therefore, there is a problem that the waste area 4 is wasted by the amount of the surplus area 4 to be discarded, and the cost is increased. SUMMARY OF THE INVENTION It is an object of the present invention to significantly reduce the discarded portion of a substrate having a size corresponding to a plurality of active element substrates.

[0007]

According to the present invention, there is provided an active element substrate having a scanning line and a data line orthogonal to each other and a pixel electrode connected to the scanning line and the data line via a switching element. In a liquid crystal display device in which an opposing substrate provided with electrodes is bonded via a substantially frame-shaped sealing material, a semiconductor chip is connected to one end of the scanning line outside the sealing material on the active element substrate. Connection terminals
A connection terminal connected to a semiconductor chip is provided on one end side of the data line outside the sealing material on the active element substrate, and the other end of the scan line and the data line are provided on the active element substrate. A substantially L-shaped anodizing power supply line is provided on the other end side. According to the present invention, a substantially L-shaped anodizing power supply line is provided at a predetermined position on the active element substrate, so that a discarded portion of a substrate having a size corresponding to a plurality of active element substrates can be greatly reduced. Can be reduced.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a liquid crystal display device according to an embodiment of the present invention, in which a liquid crystal display device formed on a glass substrate having a size corresponding to a plurality of active element substrates is shown. FIG. 2 is a plan view of an entire equivalent circuit in which parts are omitted. In this figure, the same reference numerals are given to the same parts as those in FIG. 3, and the description thereof will be omitted as appropriate. 1 is different from the conventional example shown in FIG.
An extra area is not provided between the active element substrate forming areas 3 adjacent in the vertical direction, and one cut line 2 is provided therebetween, and an extra area is provided between the active element substrate forming areas 3 adjacent in the horizontal direction. Instead, one cut line 2 is also provided between them. For this reason,
Of the grid-like anodizing power supply lines 13, the anodizing power supply lines 13 extending in the row direction are provided on the upper side of the active element substrate formation region 3, and the anodizing power supply lines 13 extending in the column direction are connected to the active element. It is provided on the left side of the substrate forming region 3. In this case, the power supply line 13 for anodic oxidation provided on the left side of the active element substrate formation region 3 also serves as the common line 16 shown in FIG.

As described above, in this active element substrate, the active element substrate formation region 3 vertically adjacent to the active element substrate is formed.
With no surplus area between them, cut line 2 between
Since there is no extra area between the active element substrate forming areas 3 adjacent to each other in the left-right direction, and only one cut line 2 is provided between the active element substrate forming areas 3, the cutting is performed in either the row direction or the column direction. Also, the glass substrate 1 is not wasted. Therefore, the discarded portion of the glass substrate 1 having a size corresponding to a plurality of active element substrates can be significantly reduced, and the cost can be reduced.

Here, the grid-like anodic oxidation feed line 1
The reason why the anodic oxidation power supply line 13 extending in the row direction among the three elements 3 is provided on the upper side of the active element substrate formation region 3 will be described. Anodizing power supply line 1 extending in the row direction
When the semiconductor chip mounting area 3 is provided on the lower side of the active element substrate formation area 3, the semiconductor element mounting area 15 is provided between the semiconductor chip mounting area 15 and the cut line 2 outside the semiconductor chip mounting area 15. Since the space between the outer cut line 2 and the power supply line 13 for anodic oxidation is relatively large, the space becomes considerably large, and the width of the frame of the liquid crystal display device becomes large. I will. On the other hand, when the anodic oxidation power supply line 13 extending in the row direction is provided on the upper side of the active element substrate formation region 3, the width of the frame of the liquid crystal display panel can be reduced. The anodizing power supply line 13 extending in the column direction among the grid-like anodizing power supply lines 13.
Is provided on the left side of the active element substrate formation region 3 for the same reason.

Next, an example of a liquid crystal display device having an active element substrate obtained by cutting along a cut line 2 will be described with reference to FIG. In this liquid crystal display device, an active element substrate 21 obtained by cutting along a cut line 2 and a counter substrate 22 provided with a counter electrode (not shown) are interposed via a substantially frame-shaped sealing material 23. It has a laminated structure. In this case, the anodizing power supply line 13 is provided substantially in an L shape on the upper side and the left side on the glass substrate 1. The upper side of the sealing material 23 is the power supply line 1 for anodic oxidation.
3 is disposed between the upper side portion and the electrostatic protection element 12, and is formed across the other end of each data line 8. The lower side of the sealing material 23 is disposed between the lower side of the short-circuit line 11 and the semiconductor chip mounting area 15 and is formed across one end of each data line 8. The left side of the sealing material 23 is disposed between the left side of the anodizing power supply line 13 and the left side of the short-circuit line 11, and is formed across each auxiliary capacitance line 9. The right side portion of the sealing material 23 is disposed between the right side portion of the short-circuit line 11 and the semiconductor chip mounting area 14 and is formed across one end of each scanning line 7. In addition, a liquid crystal injection port 23a is formed substantially at the center of the left side of the sealing material 23.
After the liquid crystal is injected, the liquid crystal injection port 23a is sealed with a resin (not shown).

When the sealing material 23 is arranged as described above,
The arrangement state of the data lines 8 below the upper side of the sealing material 23 and the data lines 8 below the lower side of the sealing material 23
And the arrangement state of the auxiliary capacitance line 9 below the left side of the seal member 23 and the seal member 23
Since the arrangement state of the scanning lines 7 under the right side of FIG. 7 is the same, and the arrangement state of the wiring such as the data lines 8 under the seal member 23 as a whole is substantially the same, the cell gap in the seal member 23 is reduced. It can be almost uniform.

In the above embodiment, the case where the plurality of scanning lines 7 extending in the row direction are not connected to the power supply line 13 for anodic oxidation extending in the column direction on the left side has been described. May be connected to the power supply line 13 for anodic oxidation on the left side. Further, in the above, the embodiment having the auxiliary capacitance line 9 has been described. However, the pixel electrode 5 is overlapped with the vertically adjacent scanning line 7, and the auxiliary capacitance is formed by the pixel electrode 5 and the scanning line 7. The present invention is also applicable to an active element substrate in which the auxiliary capacitance line 9 is omitted. In the above description, the semiconductor chip mounting area 14 is located in the active element substrate formation area 3.
In the active element substrate forming region 3, connection terminals connected to the scanning lines 7 and the data lines 8 are formed. It may be configured to be connected to a semiconductor chip. Further, the upper side and the left side of the sealing material 23 may be arranged on the power supply line 13 for anodic oxidation.

[0014]

As described above, according to the present invention, a substantially L-shaped anodic oxidation feed line is provided at a predetermined position on the active element substrate, so that the power supply line can be used for a plurality of active element substrates. The size of the substrate can be greatly reduced, and the cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a view for explaining a liquid crystal display device according to an embodiment of the present invention, in which a part formed on a glass substrate having a size corresponding to a plurality of active element substrates is partially omitted. FIG.

FIG. 2 is a plan view illustrating an example of a liquid crystal display device including an active element substrate obtained by cutting the glass substrate shown in FIG.

FIG. 3 is a view for explaining a conventional liquid crystal display device, and is an overall equivalent circuit plane in which a part formed on a glass substrate having a size corresponding to a plurality of active element substrates is omitted. FIG.

FIG. 4 is an equivalent circuit plan view of a part of the one shown in FIG. 3;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Cut line 3 Active element substrate formation area 5 Pixel electrode 6 Thin film transistor 7 Scan line 8 Data line 9 Auxiliary capacitance line 13 Power supply line for anodic oxidation 14, 15 Semiconductor chip mounting area

Claims (5)

[Claims] 1. An active element substrate including a scanning line and a data line orthogonal to each other, a pixel electrode connected to the scanning line and the data line via a switching element, and a counter substrate including a counter electrode. In a liquid crystal display device bonded via a substantially frame-shaped sealing material, a connection terminal connected to a semiconductor chip is provided on one end side of the scanning line outside the sealing material on the active element substrate, A connection terminal connected to a semiconductor chip is provided on one end side of the data line outside the sealing material on the active element substrate, and the other end of the scan line and the data line on the active element substrate are connected to each other. A liquid crystal display device comprising a substantially L-shaped anodic oxidation power supply line provided at the other end. 2. The semiconductor chip mounting area according to claim 1, wherein a semiconductor chip mounting area is formed outside the seal material on the active element substrate, and a connection terminal on the active element substrate is in the semiconductor chip mounting area. A liquid crystal display device formed on a liquid crystal display. 3. The liquid crystal display device according to claim 1, wherein the sealing material is formed across the other end of each of the data lines. 4. The data line according to claim 3, wherein a short-circuit ring for connecting the data line is formed at the other end of the data line, and the sealing material is provided at the other end of the data line. A liquid crystal display device, which is disposed between the anodizing power supply line and the short-circuit ring. 5. The method according to claim 1, wherein an auxiliary capacitance line is provided between the scanning lines on the active element substrate, and each of the auxiliary capacitance lines is provided near the other end of the scanning line. A liquid crystal display device connected to an anodizing power supply line, wherein the sealing material is formed across the auxiliary capacitance lines on the other end side of the scanning line.