JP2000150472A5 - - Google Patents

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Publication number
JP2000150472A5
JP2000150472A5 JP1998318675A JP31867598A JP2000150472A5 JP 2000150472 A5 JP2000150472 A5 JP 2000150472A5 JP 1998318675 A JP1998318675 A JP 1998318675A JP 31867598 A JP31867598 A JP 31867598A JP 2000150472 A5 JP2000150472 A5 JP 2000150472A5
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JP
Japan
Prior art keywords
sample
plate member
plasma
gas
container
Prior art date
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Pending
Application number
JP1998318675A
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English (en)
Japanese (ja)
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JP2000150472A (ja
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Priority to JP10318675A priority Critical patent/JP2000150472A/ja
Priority claimed from JP10318675A external-priority patent/JP2000150472A/ja
Publication of JP2000150472A publication Critical patent/JP2000150472A/ja
Publication of JP2000150472A5 publication Critical patent/JP2000150472A5/ja
Pending legal-status Critical Current

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JP10318675A 1998-11-10 1998-11-10 プラズマ処理装置 Pending JP2000150472A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10318675A JP2000150472A (ja) 1998-11-10 1998-11-10 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10318675A JP2000150472A (ja) 1998-11-10 1998-11-10 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2000150472A JP2000150472A (ja) 2000-05-30
JP2000150472A5 true JP2000150472A5 (enrdf_load_stackoverflow) 2005-11-10

Family

ID=18101782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10318675A Pending JP2000150472A (ja) 1998-11-10 1998-11-10 プラズマ処理装置

Country Status (1)

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JP (1) JP2000150472A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
JP4915985B2 (ja) * 2006-02-06 2012-04-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2008166853A (ja) * 2008-03-28 2008-07-17 Hitachi Ltd プラズマエッチング装置
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
JP2011258345A (ja) * 2010-06-07 2011-12-22 Sanyo Electric Co Ltd プラズマ処理装置
JP6204869B2 (ja) 2014-04-09 2017-09-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101874822B1 (ko) * 2016-04-01 2018-07-06 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6462072B2 (ja) * 2017-09-01 2019-01-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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