JP2000021857A5 - - Google Patents
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- Publication number
- JP2000021857A5 JP2000021857A5 JP1998187863A JP18786398A JP2000021857A5 JP 2000021857 A5 JP2000021857 A5 JP 2000021857A5 JP 1998187863 A JP1998187863 A JP 1998187863A JP 18786398 A JP18786398 A JP 18786398A JP 2000021857 A5 JP2000021857 A5 JP 2000021857A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- ions
- substrate
- electric field
- substrate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 15
- 150000002500 ions Chemical class 0.000 claims 10
- 230000005684 electric field Effects 0.000 claims 8
- 238000001020 plasma etching Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 230000007935 neutral effect Effects 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- 239000002356 single layer Substances 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18786398A JP3997004B2 (ja) | 1998-07-02 | 1998-07-02 | 反応性イオンエッチング方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18786398A JP3997004B2 (ja) | 1998-07-02 | 1998-07-02 | 反応性イオンエッチング方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000021857A JP2000021857A (ja) | 2000-01-21 |
| JP2000021857A5 true JP2000021857A5 (enrdf_load_stackoverflow) | 2005-10-06 |
| JP3997004B2 JP3997004B2 (ja) | 2007-10-24 |
Family
ID=16213542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18786398A Expired - Lifetime JP3997004B2 (ja) | 1998-07-02 | 1998-07-02 | 反応性イオンエッチング方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3997004B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7878145B2 (en) * | 2004-06-02 | 2011-02-01 | Varian Semiconductor Equipment Associates, Inc. | Monitoring plasma ion implantation systems for fault detection and process control |
| CN108328935B (zh) * | 2018-04-16 | 2024-02-27 | 中国工程物理研究院激光聚变研究中心 | 交变电场辅助光学元件表面刻蚀处理装置及处理方法 |
| CN110197785A (zh) * | 2019-06-21 | 2019-09-03 | 苏州加拉泰克动力有限公司 | 一种制备防炫光玻璃的蚀刻系统及制备方法 |
| CN119247689A (zh) * | 2024-09-12 | 2025-01-03 | 珠海市龙图光罩科技有限公司 | 掩模版线边修正方法、装置、设备、存储介质及产品 |
-
1998
- 1998-07-02 JP JP18786398A patent/JP3997004B2/ja not_active Expired - Lifetime
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