JP3997004B2 - 反応性イオンエッチング方法及び装置 - Google Patents
反応性イオンエッチング方法及び装置 Download PDFInfo
- Publication number
- JP3997004B2 JP3997004B2 JP18786398A JP18786398A JP3997004B2 JP 3997004 B2 JP3997004 B2 JP 3997004B2 JP 18786398 A JP18786398 A JP 18786398A JP 18786398 A JP18786398 A JP 18786398A JP 3997004 B2 JP3997004 B2 JP 3997004B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- etching
- vacuum chamber
- electric field
- reactive ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000001020 plasma etching Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 42
- 150000002500 ions Chemical class 0.000 claims description 31
- 230000007935 neutral effect Effects 0.000 claims description 25
- 230000005684 electric field Effects 0.000 claims description 19
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 28
- 230000008859 change Effects 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- -1 CF 2 radical Chemical class 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18786398A JP3997004B2 (ja) | 1998-07-02 | 1998-07-02 | 反応性イオンエッチング方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18786398A JP3997004B2 (ja) | 1998-07-02 | 1998-07-02 | 反応性イオンエッチング方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000021857A JP2000021857A (ja) | 2000-01-21 |
| JP2000021857A5 JP2000021857A5 (enrdf_load_stackoverflow) | 2005-10-06 |
| JP3997004B2 true JP3997004B2 (ja) | 2007-10-24 |
Family
ID=16213542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18786398A Expired - Lifetime JP3997004B2 (ja) | 1998-07-02 | 1998-07-02 | 反応性イオンエッチング方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3997004B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7878145B2 (en) * | 2004-06-02 | 2011-02-01 | Varian Semiconductor Equipment Associates, Inc. | Monitoring plasma ion implantation systems for fault detection and process control |
| CN108328935B (zh) * | 2018-04-16 | 2024-02-27 | 中国工程物理研究院激光聚变研究中心 | 交变电场辅助光学元件表面刻蚀处理装置及处理方法 |
| CN110197785A (zh) * | 2019-06-21 | 2019-09-03 | 苏州加拉泰克动力有限公司 | 一种制备防炫光玻璃的蚀刻系统及制备方法 |
| CN119247689A (zh) * | 2024-09-12 | 2025-01-03 | 珠海市龙图光罩科技有限公司 | 掩模版线边修正方法、装置、设备、存储介质及产品 |
-
1998
- 1998-07-02 JP JP18786398A patent/JP3997004B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000021857A (ja) | 2000-01-21 |
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