JP2000106424A5 - - Google Patents
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- Publication number
- JP2000106424A5 JP2000106424A5 JP1999209248A JP20924899A JP2000106424A5 JP 2000106424 A5 JP2000106424 A5 JP 2000106424A5 JP 1999209248 A JP1999209248 A JP 1999209248A JP 20924899 A JP20924899 A JP 20924899A JP 2000106424 A5 JP2000106424 A5 JP 2000106424A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- layer
- oxide layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 25
- 239000013078 crystal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229960001716 benzalkonium Drugs 0.000 description 3
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20924899A JP4609867B2 (ja) | 1998-07-29 | 1999-07-23 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21412598 | 1998-07-29 | ||
| JP10-214125 | 1998-07-29 | ||
| JP20924899A JP4609867B2 (ja) | 1998-07-29 | 1999-07-23 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010028296A Division JP2010171434A (ja) | 1998-07-29 | 2010-02-11 | 半導体装置の作製方法 |
| JP2010110077A Division JP5178775B2 (ja) | 1998-07-29 | 2010-05-12 | Ｓｏｉ基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000106424A JP2000106424A (ja) | 2000-04-11 |
| JP2000106424A5 true JP2000106424A5 (cg-RX-API-DMAC7.html) | 2006-08-31 |
| JP4609867B2 JP4609867B2 (ja) | 2011-01-12 |
Family
ID=26517313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20924899A Expired - Fee Related JP4609867B2 (ja) | 1998-07-29 | 1999-07-23 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4609867B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP2003142667A (ja) * | 2001-08-24 | 2003-05-16 | Seiko Epson Corp | 半導体基板の製造方法、半導体基板、電気光学装置並びに電子機器 |
| US7119365B2 (en) | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| JP4772258B2 (ja) * | 2002-08-23 | 2011-09-14 | シャープ株式会社 | Ｓｏｉ基板の製造方法 |
| JP2005026472A (ja) * | 2003-07-02 | 2005-01-27 | Sharp Corp | 半導体装置の製造方法 |
| TWI475667B (zh) * | 2005-03-28 | 2015-03-01 | 半導體能源研究所股份有限公司 | 記憶裝置和其製造方法 |
| CN101681843B (zh) * | 2007-06-20 | 2012-05-09 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| JP2009076729A (ja) * | 2007-09-21 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US7851318B2 (en) | 2007-11-01 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device |
| US7977206B2 (en) | 2008-01-16 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate using the heat treatment apparatus |
| JP5646914B2 (ja) * | 2010-08-24 | 2014-12-24 | 独立行政法人科学技術振興機構 | トンネル接合素子の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3092761B2 (ja) * | 1991-12-02 | 2000-09-25 | キヤノン株式会社 | 画像表示装置及びその製造方法 |
| JP3262470B2 (ja) * | 1993-12-28 | 2002-03-04 | キヤノン株式会社 | 半導体基板およびその作製方法 |
| JP3352340B2 (ja) * | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
| JPH07283381A (ja) * | 1994-04-08 | 1995-10-27 | Canon Inc | 貼合わせ半導体基体の製造方法 |
-
1999
- 1999-07-23 JP JP20924899A patent/JP4609867B2/ja not_active Expired - Fee Related
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