JP2000100806A5 - - Google Patents
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- Publication number
- JP2000100806A5 JP2000100806A5 JP1999224828A JP22482899A JP2000100806A5 JP 2000100806 A5 JP2000100806 A5 JP 2000100806A5 JP 1999224828 A JP1999224828 A JP 1999224828A JP 22482899 A JP22482899 A JP 22482899A JP 2000100806 A5 JP2000100806 A5 JP 2000100806A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- gas
- oxide film
- tantalum nitride
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980032106A KR100292088B1 (ko) | 1998-08-07 | 1998-08-07 | 반도체소자 제조방법 |
| KR1998-32106 | 1998-08-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000100806A JP2000100806A (ja) | 2000-04-07 |
| JP2000100806A5 true JP2000100806A5 (enExample) | 2006-09-21 |
Family
ID=19546649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11224828A Pending JP2000100806A (ja) | 1998-08-07 | 1999-08-09 | 半導体素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000100806A (enExample) |
| KR (1) | KR100292088B1 (enExample) |
| TW (1) | TW425657B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020051062A (ko) * | 2000-12-22 | 2002-06-28 | 박종섭 | 탄탈륨 옥시 나이트라이드 캐퍼시터의 형성 방법 |
| KR100428655B1 (ko) * | 2002-07-19 | 2004-04-28 | 주식회사 하이닉스반도체 | 캐패시터의 제조 방법 |
-
1998
- 1998-08-07 KR KR1019980032106A patent/KR100292088B1/ko not_active Expired - Fee Related
-
1999
- 1999-08-09 JP JP11224828A patent/JP2000100806A/ja active Pending
- 1999-08-12 TW TW088113790A patent/TW425657B/zh active
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