KR100292088B1 - 반도체소자 제조방법 - Google Patents

반도체소자 제조방법 Download PDF

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Publication number
KR100292088B1
KR100292088B1 KR1019980032106A KR19980032106A KR100292088B1 KR 100292088 B1 KR100292088 B1 KR 100292088B1 KR 1019980032106 A KR1019980032106 A KR 1019980032106A KR 19980032106 A KR19980032106 A KR 19980032106A KR 100292088 B1 KR100292088 B1 KR 100292088B1
Authority
KR
South Korea
Prior art keywords
oxide film
film
gas
plasma
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980032106A
Other languages
English (en)
Korean (ko)
Other versions
KR20000013319A (ko
Inventor
황철주
Original Assignee
황 철 주
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 황 철 주, 주성엔지니어링(주) filed Critical 황 철 주
Priority to KR1019980032106A priority Critical patent/KR100292088B1/ko
Priority to JP11224828A priority patent/JP2000100806A/ja
Priority to TW088113790A priority patent/TW425657B/zh
Publication of KR20000013319A publication Critical patent/KR20000013319A/ko
Application granted granted Critical
Publication of KR100292088B1 publication Critical patent/KR100292088B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1019980032106A 1998-08-07 1998-08-07 반도체소자 제조방법 Expired - Fee Related KR100292088B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019980032106A KR100292088B1 (ko) 1998-08-07 1998-08-07 반도체소자 제조방법
JP11224828A JP2000100806A (ja) 1998-08-07 1999-08-09 半導体素子の製造方法
TW088113790A TW425657B (en) 1998-08-07 1999-08-12 Method for fabricating a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980032106A KR100292088B1 (ko) 1998-08-07 1998-08-07 반도체소자 제조방법

Publications (2)

Publication Number Publication Date
KR20000013319A KR20000013319A (ko) 2000-03-06
KR100292088B1 true KR100292088B1 (ko) 2001-07-12

Family

ID=19546649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980032106A Expired - Fee Related KR100292088B1 (ko) 1998-08-07 1998-08-07 반도체소자 제조방법

Country Status (3)

Country Link
JP (1) JP2000100806A (enExample)
KR (1) KR100292088B1 (enExample)
TW (1) TW425657B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020051062A (ko) * 2000-12-22 2002-06-28 박종섭 탄탈륨 옥시 나이트라이드 캐퍼시터의 형성 방법
KR100428655B1 (ko) * 2002-07-19 2004-04-28 주식회사 하이닉스반도체 캐패시터의 제조 방법

Also Published As

Publication number Publication date
JP2000100806A (ja) 2000-04-07
TW425657B (en) 2001-03-11
KR20000013319A (ko) 2000-03-06

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