JP2000081512A - Etalon filter and its production - Google Patents

Etalon filter and its production

Info

Publication number
JP2000081512A
JP2000081512A JP25226998A JP25226998A JP2000081512A JP 2000081512 A JP2000081512 A JP 2000081512A JP 25226998 A JP25226998 A JP 25226998A JP 25226998 A JP25226998 A JP 25226998A JP 2000081512 A JP2000081512 A JP 2000081512A
Authority
JP
Japan
Prior art keywords
substrate
etalon filter
thickness
etching
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25226998A
Other languages
Japanese (ja)
Other versions
JP2000081512A5 (en
JP4244410B2 (en
Inventor
Kazuyuki Nakasendou
和之 中仙道
Satoru Monma
哲 門馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP25226998A priority Critical patent/JP4244410B2/en
Publication of JP2000081512A publication Critical patent/JP2000081512A/en
Publication of JP2000081512A5 publication Critical patent/JP2000081512A5/ja
Application granted granted Critical
Publication of JP4244410B2 publication Critical patent/JP4244410B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a ultrathin etalon filter with high machining accuracy and high production yield by polishing one principal surface of a quartz substrate by mechanical machining and the other principal surface by etching and then forming dielectric films on both polished principal surfaces of the substrate. SOLUTION: A substrate 1 is obtained by mechanically polishing the both surfaces of a synthetic quartz substrate 1. The one surface of the substrate 1 is adhered with an acid-resistant adhesive or wax 7 to a large substrate such as synthetic quartz having several mm or more thickness and good parallelism to obtain a laminated substrate 11. The laminated substrate 11 is dipped in a fluorine-based etching liquid 9 in an etching tank 8 to wet etch the one surface of the substrate 1 to obtain a thin plate having specified thickness (about several ten μm). Then the substrate 1 is peeled from the large substrate 4, and only the substrate 1 satisfying the finish ratings of thickness and parallelism is selected. Then a dielectric material 6 such as alumina is vapor deposited on both surfaces of the substrate 1 to form reflection films 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は超薄板エタロンフィ
ルタおよびその製造方法に関し、詳しくは合成石英基板
を機械的研磨法とウエットエッチングとを組み合わせる
ことにより、極薄且つ安価なエタロンフィルタ基板の供
給を可能とする超薄板エタロンフィルタおよびその製造
方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-thin etalon filter and a method for manufacturing the same, and more particularly to a method for supplying an ultra-thin and inexpensive etalon filter substrate by combining a synthetic quartz substrate with mechanical polishing and wet etching. The present invention relates to an ultra-thin etalon filter and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、移動体通信やパソコン通信等の著
しい普及により、取り扱うデ−タ量が膨大化し且つ高速
化が要求されており、デ−タ通信網ではこれらの複数種
デ−タを光に変換して光ファイバ−を用いて伝送する波
長多重光通信技術が一般的になっている。このように波
長多重する場合、光信号の間隔、多重数に応じて光信号
を増幅する光ファイバ−アンプの利得を調整して伝送帯
域を平坦化する必要があり、この平坦化する方法とし
て、ファブリ・ペロ−共振を用いたエタロンフィルタ−
を複数組み合わせて帯域内利得を等価することが一般に
行われている。
2. Description of the Related Art In recent years, due to the remarkable spread of mobile communication and personal computer communication, the amount of data to be handled has become enormous and high speed has been demanded. In a data communication network, these plural kinds of data are used. 2. Description of the Related Art Wavelength multiplexing optical communication technology for converting light into light and transmitting the converted light using an optical fiber has become common. When wavelength multiplexing is performed in this manner, it is necessary to flatten the transmission band by adjusting the gain of the optical fiber amplifier that amplifies the optical signal in accordance with the interval between the optical signals and the number of multiplexed signals. Fabry-Perot -Etalon filter using resonance
In general, the in-band gain is equalized by combining a plurality of.

【0003】このエタロンフィルタ−は、合成石英板を
厚みが数十μm程度の極薄基板に加工し、その両面に反
射膜を付着させて通過光を反射させることにより、光信
号を定在波化して通過帯域を制限し、複数光信号の波長
多重を可能とし、所定の帯域内において光伝送を容易に
するものである。しかし、このフィルタ−の基本特性は
極薄基板の厚みと平行度とにより決まる光学的特性に大
きく左右されるので、合成石英板を加工する際は、平行
度を保持しながら厚みを極薄に制御することが求められ
る。
In this etalon filter, a synthetic quartz plate is processed into an ultra-thin substrate having a thickness of about several tens of μm, and reflecting films are adhered on both surfaces thereof to reflect the passing light, thereby converting an optical signal into a standing wave. In this case, the pass band is restricted to enable wavelength multiplexing of a plurality of optical signals, thereby facilitating optical transmission within a predetermined band. However, the basic characteristics of this filter are greatly affected by the optical characteristics determined by the thickness and the parallelism of the ultra-thin substrate. Control is required.

【0004】図2は、従来の超薄型エタロンフィルタお
よびその製造方法の一例における工程を示す図である。
同図に示すように、この製造方法は、下記の工程から成
る。 (1)合成石英基板1の両面を機械研磨した基板1を作
る。 (2)大型基板4に基板1の片面を接着剤を用いて貼り
付けた積層基板10を作る。 (3)積層基板10上の基板1のもう一方の面を機械研
磨して薄板に加工する。 (4)最終規格値を満足する基板1のみを選択し、 (5)基板1の両面に反射膜3を蒸着する。 以下、この製造方法の詳細を説明する。
FIG. 2 is a view showing steps in an example of a conventional ultra-thin etalon filter and a method of manufacturing the same.
As shown in the figure, this manufacturing method includes the following steps. (1) A substrate 1 is prepared by mechanically polishing both sides of a synthetic quartz substrate 1. (2) A laminated substrate 10 in which one surface of the substrate 1 is attached to the large substrate 4 using an adhesive is produced. (3) The other surface of the substrate 1 on the laminated substrate 10 is mechanically polished and processed into a thin plate. (4) Only the substrate 1 that satisfies the final specification value is selected. (5) The reflective films 3 are deposited on both surfaces of the substrate 1. Hereinafter, the details of this manufacturing method will be described.

【0005】(1)の工程では基板1を両面同時または
片面づつ交互に鏡面研磨し、研磨面を直接計測するマイ
クロメ−タや研磨面に投射した光の干渉縞を用いて、厚
みと平行度とを計測しながら、厚み(約50〜100μ
m)程度の基板1とするが、この程度の厚みへの機械加
工は技術的に確立しており、充分高精度の加工品質が得
られる。(2)では基板1の片面を厚みが数mm以上の
平行度のよい合成石英等の大型基板4に接着剤5で貼り
付けた積層基板10を作り(3)積層基板10を研磨装
置に固定して基板1の一方の面を機械研磨する。途中で
厚みと平行度をチェックして、所定の厚み値(約数十μ
m)の薄板状となるまで加工を繰り返し、基板1を大型
基板4から剥離する。次に、(4)基板1の両面を計測
し、厚みと平行度共に最終規格値を満足する基板1のみ
を選択し、(5)基板1の両面にアルミナ等の誘電体材
料6を蒸着して反射膜3を形成することにより超薄型エ
タロンフィルタ2が完成する。
In the step (1), the substrate 1 is mirror-polished on both sides simultaneously or alternately one by one, and the thickness and the parallelism are measured using a micrometer for directly measuring the polished surface or an interference fringe of light projected on the polished surface. While measuring the thickness (about 50-100μ)
Although the substrate 1 has a thickness of about m), machining to such a thickness is technically established, and a sufficiently high processing quality can be obtained. In (2), a laminated substrate 10 is formed by attaching one surface of the substrate 1 to a large substrate 4 made of synthetic quartz or the like having a thickness of several mm or more and having good parallelism with an adhesive 5 (3) Fixing the laminated substrate 10 to a polishing apparatus. Then, one surface of the substrate 1 is mechanically polished. Check the thickness and parallelism on the way, and determine the thickness (approx.
The processing is repeated until the substrate 1 becomes the thin plate of m), and the substrate 1 is separated from the large substrate 4. Next, (4) both sides of the substrate 1 are measured, and only the substrate 1 that satisfies the final specification values in both thickness and parallelism is selected. (5) Dielectric material 6 such as alumina is deposited on both sides of the substrate 1. Thus, the ultra-thin etalon filter 2 is completed.

【0006】[0006]

【発明が解決しようとする課題】しかしながら以上説明
したような従来のエタロンフィルタおよびその製造方法
においては、合成石英基板を大型基板に貼り合わせた際
の貼り合わせ精度が研磨面の平坦化と平行度に大きく影
響する。例えば、図3(a)に示すように石英基板1が
大型基板4に対して不平行に固着されていれば図中左側
が片減りするよう研磨され、図3(b)に示すように、
接着剤5が偏っていた場合は研磨は不均一となり研磨面
に凹凸が生ずるという問題点があった。そこで、所定の
厚みまで機械研磨を施した石英基板をウエットエッチン
グして所望の厚みの薄板を得るという手法も提案されて
いる。しかしながら、石英基板をエッチング液中で保持
するべく、基板端縁を治具により固定すると、治具によ
り覆い隠された部分はエッチングされず所望の厚みが得
られないことから、その部分は切り捨てなければならな
いという問題がある。また、エッチング液を攪拌するこ
とにより発生する水流によって薄くなった基板に割れや
欠けが生じて歩留まりが低下するという問題もあった。
本発明は上述したような従来のエタロンフィルタおよび
その製造方法に係わる諸問題を解決するためになされた
ものであって、極薄板の製造を容易に可能としたエタロ
ンフィルタおよびその製造方法を提供することを目的と
する。
However, in the conventional etalon filter and the manufacturing method thereof as described above, the bonding accuracy when the synthetic quartz substrate is bonded to the large-sized substrate has a flatness of the polished surface and a parallelism. Has a significant effect. For example, if the quartz substrate 1 is fixed non-parallel to the large-sized substrate 4 as shown in FIG. 3A, the left side in the figure is polished so as to be reduced, and as shown in FIG.
When the adhesive 5 is uneven, there is a problem that polishing is not uniform and unevenness is generated on the polished surface. Therefore, a technique has been proposed in which a quartz substrate which has been mechanically polished to a predetermined thickness is wet-etched to obtain a thin plate having a desired thickness. However, if the edge of the substrate is fixed with a jig in order to hold the quartz substrate in the etching solution, the portion covered by the jig is not etched and the desired thickness cannot be obtained. There is a problem that must be. In addition, there is also a problem in that the thinned substrate is cracked or chipped by the water flow generated by stirring the etchant, thereby lowering the yield.
SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems related to the conventional etalon filter and the method for manufacturing the same as described above, and provides an etalon filter and a method for manufacturing the etalon filter that can easily manufacture an ultrathin plate. The purpose is to:

【0007】[0007]

【課題を解決するための手段】上述の目的を達成するた
めに本発明においては、一方の主表面は機械加工によ
り、他方の主表面はエッチングによりそれぞれ研磨され
た石英基板の両主表面に誘電体膜を備えるよう構成した
ものであって、所定の厚みを有する石英基板の両面に誘
電体薄膜を備えたエタロンフィルタの製造方法におい
て、前記石英基板の両面を機械研磨しし、研磨した石英
基板を大型基板に接着固定し、大型基板と共にウエット
エッチングを施して前記所定の厚みを得、前記石英基板
を大型基板から剥離した後に、石英基板の両面に誘電体
膜を蒸着することを特徴とするものである。
In order to achieve the above-mentioned object, according to the present invention, one main surface is machined, and the other main surface is provided on both main surfaces of a quartz substrate polished by etching. A method for manufacturing an etalon filter comprising a body film and a dielectric thin film on both surfaces of a quartz substrate having a predetermined thickness, wherein both surfaces of the quartz substrate are mechanically polished and polished. Is adhered and fixed to a large substrate, wet etching is performed together with the large substrate to obtain the predetermined thickness, and after the quartz substrate is separated from the large substrate, a dielectric film is deposited on both surfaces of the quartz substrate. Things.

【0008】[0008]

【発明の実施の形態】以下、図示した実施の形態に基づ
いて本発明を詳細に説明する。図1は、本発明に係わる
超薄板エタロンフィルタおよびその製造方法における工
程を示す図である。尚、図2と同じ構成要素には同一の
符号を付すものとする。同図に示すように、この製造方
法は、下記の工程から成る。 (1)合成石英基板1の両面を機械研磨した基板1を得
る。 (2)大型基板4に基板1の片面を耐酸性接着剤または
ワックス7を用いて貼り付けた積層基板11を作る。 (3)積層基板11をエッチング漕8に投入してエッチ
ング用腐食液(以下、エチャント)9に浸して、基板1
のもう一方の面に所定量のウエットエッチングを行ない
所望の厚さ迄加工する。 (4)最終規格値を満足する基板1のみを選択し、 (5)基板1の両面に反射膜3を蒸着する。 以下、図示した実施例についてその製造方法を詳細に説
明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on illustrated embodiments. FIG. 1 is a diagram showing steps in an ultra-thin etalon filter and a method of manufacturing the same according to the present invention. The same components as those in FIG. 2 are denoted by the same reference numerals. As shown in the figure, this manufacturing method includes the following steps. (1) Obtain a substrate 1 in which both surfaces of the synthetic quartz substrate 1 are mechanically polished. (2) A laminated substrate 11 is formed by attaching one surface of the substrate 1 to the large substrate 4 using an acid-resistant adhesive or wax 7. (3) The laminated substrate 11 is put into the etching tank 8 and immersed in an etching etchant (hereinafter, referred to as “etchant”) 9.
A predetermined amount of wet etching is performed on the other surface of the substrate to be processed to a desired thickness. (4) Only the substrate 1 that satisfies the final specification value is selected. (5) The reflective films 3 are deposited on both surfaces of the substrate 1. Hereinafter, the manufacturing method of the illustrated embodiment will be described in detail.

【0009】図1において、機械研磨によって基板1を
作る工程(1)は図2の従来例の工程(1)と同じであ
るので説明は省略する。この時の基板1の厚みと平行度
とを計測し、最終仕様値の薄板に仕上げるための基板1
のエッチング量を決定するためのデ−タとする。(2)
では基板1の片面を厚みが数mm以上の平行度のよい合
成石英等の大型基板4に耐酸性接着剤またはワックス7
で貼り付け、積層基板11を作り、(3)積層基板11
をエッチング漕8内の弗素系エッチング用腐食液(以
下、エチャント)9に浸して基板1の一方の面をウエッ
トエッチングし、所定の厚み値(約数十μm)の薄板に
加工する。そして積層基板11をエッチング漕8から取
り出し、基板1を大型基板4から剥離する。この時の基
板1を薄板へ加工するためのエッチング量は最終仕様値
に対して(1)で測定した厚みとエッチング速度とをも
とにして決定し、エチャント9の濃度、温度、時間を正
確に制御することによって達成される。またこの時、エ
チャント9を攪拌して基板1近傍のエッチング液の濃度
を常に均一化する。次に、(4)基板1の両面を計測
し、厚みと平行度共に最終規格値を満足する基板1のみ
を選択し、(5)基板1の両面にアルミナ等の誘電体材
料6を蒸着して反射膜3を形成することにより超薄型エ
タロンフィルタ2が完成する。
In FIG. 1, the step (1) of forming the substrate 1 by mechanical polishing is the same as the step (1) of the conventional example of FIG. At this time, the thickness and the parallelism of the substrate 1 are measured, and the substrate 1 for finishing to a thin plate of the final specification value is obtained.
Is used to determine the amount of etching. (2)
Then, one surface of the substrate 1 is attached to a large-sized substrate 4 such as synthetic quartz having a thickness of several mm or more and having good parallelism with an acid-resistant adhesive or wax 7.
To form a laminated substrate 11, and (3) the laminated substrate 11
Is immersed in a fluorine-based etching etchant (hereinafter referred to as an etchant) 9 in an etching tank 8 to wet-etch one surface of the substrate 1 to form a thin plate having a predetermined thickness (about several tens μm). Then, the laminated substrate 11 is taken out of the etching tank 8, and the substrate 1 is separated from the large substrate 4. At this time, the etching amount for processing the substrate 1 into a thin plate is determined based on the thickness and the etching rate measured in (1) with respect to the final specification value, and the concentration, temperature, and time of the etchant 9 are accurately determined. This is achieved by controlling At this time, the etchant 9 is agitated so that the concentration of the etchant near the substrate 1 is always made uniform. Next, (4) both sides of the substrate 1 are measured, and only the substrate 1 that satisfies the final specification values in both thickness and parallelism is selected. (5) Dielectric material 6 such as alumina is deposited on both sides of the substrate 1. Thus, the ultra-thin etalon filter 2 is completed.

【0010】[0010]

【発明の効果】本発明のエタロンフィルタおよびその製
造方法によれば、両面を機械研磨した一次基板1を大型
基板4に貼り付けて片面のみウエットエッチングを行な
うのみであるから作業性が著しく向上した。またエッチ
ング量はエチャント9の濃度、温度、時間を制御するこ
とにより正確に把握出来、石英基板を大型基板へ貼り付
ける際に、傾いているかあるいは接着剤7に塗りむらが
あったとしても、エッチング面は均一に削除されるた
め、平坦度と平行度を維持したまま石英基板を薄板化出
来る。尚、ウエットエッチング加工により基板1の光の
透過率の低下および平行度の劣化が生ずるものの、これ
によるエタロンフィルタ−の基本特性への影響は殆どな
く極めて高い加工精度で且つ高歩留まり率の超薄型エタ
ロンフィルタ2の製造を可能とし、従来のエタロンフィ
ルタおよびその製造方法と比較してその効果は大であ
る。
According to the etalon filter and the method of manufacturing the same of the present invention, the workability is remarkably improved since the primary substrate 1 whose both surfaces are mechanically polished is attached to the large substrate 4 and only one surface is wet-etched. . The amount of etching can be accurately grasped by controlling the concentration, temperature, and time of the etchant 9. Even when the quartz substrate is attached to a large-sized substrate, even if the substrate is inclined or the adhesive 7 is not evenly coated, the etching amount can be reduced. Since the surface is uniformly removed, the quartz substrate can be thinned while maintaining flatness and parallelism. Although the wet etching causes a decrease in the light transmittance of the substrate 1 and a decrease in the parallelism, it has almost no effect on the basic characteristics of the etalon filter, and has an extremely high processing accuracy and a high yield rate. The etalon filter 2 can be manufactured, and its effect is great as compared with the conventional etalon filter and its manufacturing method.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係わるエタロンフィルタおよびその製
造方法における工程を示す図である。
FIG. 1 is a diagram showing steps in an etalon filter and a method of manufacturing the etalon filter according to the present invention.

【図2】従来のエタロンフィルタおよびその製造方法の
一例における工程を示す図である。
FIG. 2 is a view showing steps in an example of a conventional etalon filter and a method of manufacturing the same.

【図3】従来のエタロンフィルタおよびその製造方法に
おける積層基板の仕上がり状態を示す図である。
FIG. 3 is a view showing a finished state of a laminated substrate in a conventional etalon filter and a method of manufacturing the same.

【符号の説明】[Explanation of symbols]

1…合成石英基板、2…エタロンフィルタ超薄板、3…
反射膜、4…大型基板、5…接着剤、6…誘電体材料、
7…耐酸性接着剤またはワックス,8…エッチング漕、
9…エッチング用腐食液(エチャント)、10,11…
積層基板、
1: Synthetic quartz substrate, 2: Ultra thin etalon filter, 3:
Reflective film, 4 large substrate, 5 adhesive, 6 dielectric material,
7 ... acid resistant adhesive or wax, 8 ... etching tank,
9 ... etching etchant (etchant), 10,11 ...
Laminated substrate,

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】一方の主表面は機械加工により、他方の主
表面はエッチングによりそれぞれ研磨された石英基板の
両主表面に誘電体膜を備えたことを特徴とするエタロン
フィルタ。
1. An etalon filter comprising a quartz substrate, one main surface of which is machined and the other main surface of which is polished by etching.
【請求項2】所定の厚みを有する石英基板の両面に誘電
体薄膜を備えたエタロンフィルタの製造方法において、
前記石英基板の両面を機械研磨し、研磨した石英基板を
大型基板に接着固定し、大型基板と共にウエットエッチ
ングを施して前記所定の厚みを得、前記石英基板を大型
基板から剥離した後に、石英基板の両面に誘電体膜を蒸
着することを特徴とするエタロンフィルタ超薄板の製造
方法。
2. A method for manufacturing an etalon filter having a dielectric thin film on both sides of a quartz substrate having a predetermined thickness,
Both surfaces of the quartz substrate are mechanically polished, the polished quartz substrate is bonded and fixed to a large substrate, wet etching is performed together with the large substrate to obtain the predetermined thickness, and the quartz substrate is separated from the large substrate. A method for manufacturing an ultrathin etalon filter, comprising depositing a dielectric film on both surfaces of the etalon filter.
JP25226998A 1998-09-07 1998-09-07 Etalon filter and manufacturing method thereof Expired - Fee Related JP4244410B2 (en)

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Cited By (4)

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JP2009543144A (en) * 2006-07-10 2009-12-03 ショット アクチエンゲゼルシャフト Method of manufacturing an optoelectronic component and product manufactured by the method
WO2012070301A1 (en) * 2010-11-22 2012-05-31 浜松ホトニクス株式会社 Method for producing spectroscopic sensor
WO2013051373A1 (en) * 2011-10-04 2013-04-11 浜松ホトニクス株式会社 Production method for spectroscopic sensor
US8873056B2 (en) 2010-11-22 2014-10-28 Hamamatsu Photonics K.K. Spectroscopic sensor

Cited By (9)

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Publication number Priority date Publication date Assignee Title
JP2009543144A (en) * 2006-07-10 2009-12-03 ショット アクチエンゲゼルシャフト Method of manufacturing an optoelectronic component and product manufactured by the method
WO2012070301A1 (en) * 2010-11-22 2012-05-31 浜松ホトニクス株式会社 Method for producing spectroscopic sensor
JP2012112723A (en) * 2010-11-22 2012-06-14 Hamamatsu Photonics Kk Method for manufacturing spectroscopic sensor
US20130153139A1 (en) * 2010-11-22 2013-06-20 Hamamatsu Photonics K.K. Method for producing spectroscopic sensor
US8715443B2 (en) 2010-11-22 2014-05-06 Hamamatsu Photonics K.K. Method for producing spectroscopic sensor
US8873056B2 (en) 2010-11-22 2014-10-28 Hamamatsu Photonics K.K. Spectroscopic sensor
WO2013051373A1 (en) * 2011-10-04 2013-04-11 浜松ホトニクス株式会社 Production method for spectroscopic sensor
JP2013080830A (en) * 2011-10-04 2013-05-02 Hamamatsu Photonics Kk Method for manufacturing spectroscopic sensor
US8980675B2 (en) 2011-10-04 2015-03-17 Hamamatsu Photonics K.K. Production method for spectroscopic sensor

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