JP2000077686A - Mounting structure of semiconductor device - Google Patents
Mounting structure of semiconductor deviceInfo
- Publication number
- JP2000077686A JP2000077686A JP10243778A JP24377898A JP2000077686A JP 2000077686 A JP2000077686 A JP 2000077686A JP 10243778 A JP10243778 A JP 10243778A JP 24377898 A JP24377898 A JP 24377898A JP 2000077686 A JP2000077686 A JP 2000077686A
- Authority
- JP
- Japan
- Prior art keywords
- sealing body
- island
- emitting element
- semiconductor device
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000007789 sealing Methods 0.000 claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 230000001902 propagating effect Effects 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 12
- 229920005989 resin Polymers 0.000 abstract description 12
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101150042515 DA26 gene Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光素子と受光素
子とを個別に或いは同時に樹脂封止した光半導体装置の
実装構造に関するものであり、特に薄形化に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of an optical semiconductor device in which a light emitting element and a light receiving element are individually or simultaneously resin-sealed, and more particularly to a thin structure.
【０００２】[0002]
【従来の技術】最近、サブノートパソコン、携帯情報端
末、電子スチルカメラ等のマルチメディア機器がめざま
しい発展を遂げている。これらの機器は、携帯性を求め
られることから外部とのデータ送受信にも簡便なものが
要求され、赤外線等の光信号を用いることによりコード
レスで外部機器と本体とを接続する装置を備えたものが
多い。その中でも光信号として波長が８７０ｎｍの赤外
線を用いるＩｒＤＡ( Infrared Data Association)規格
が最も普及している。2. Description of the Related Art Recently, multimedia equipment such as a sub-notebook personal computer, a portable information terminal, and an electronic still camera has been remarkably developed. These devices are required to be easy to transmit and receive data to and from the outside because they are required to be portable, and equipped with a device that connects the external device and the main unit in a cordless manner by using optical signals such as infrared rays. There are many. Among them, the IrDA (Infrared Data Association) standard using infrared light having a wavelength of 870 nm as an optical signal is most widely used.
【０００３】ＩｒＤＡ規格によるデータ通信を利用する
ためには、接続すべき両方の機器に、赤外線信号を発す
る発光素子と、赤外線信号を受ける受光素子とを備える
必要がある。発光素子と受光素子とは、それぞれ別個の
パッケージとして電子機器に組み込まれる場合もある
し、両者が１つのパッケージに収納されたモジュールと
して供給される場合もある。In order to use data communication according to the IrDA standard, both devices to be connected need to be provided with a light emitting element for emitting an infrared signal and a light receiving element for receiving an infrared signal. The light emitting element and the light receiving element may be incorporated in the electronic device as separate packages, respectively, or both may be supplied as a module housed in one package.
【０００４】図４に、発光素子と受光素子とを１つのパ
ッケージに収納した赤外線データ通信用の半導体装置の
例を示す（例えば、特開平１０−７０３０４号）。この
装置は、装置本体１内に、半導体チップの形態で提供さ
れた受光素子２と発光素子３とを収納したもので、少な
くとも赤外線に対して透明な樹脂で樹脂モールドしたも
のである。特に受光素子２においては、受光用のホトダ
イオードＰＤと、アンプ回路等の周辺回路とを同一チッ
プ内に集積化する場合もある。FIG. 4 shows an example of a semiconductor device for infrared data communication in which a light emitting element and a light receiving element are housed in one package (for example, Japanese Patent Application Laid-Open No. H10-70304). In this device, a light receiving element 2 and a light emitting element 3 provided in the form of a semiconductor chip are housed in a device main body 1, and are molded with a resin transparent to at least infrared rays. In particular, in the light receiving element 2, the photodiode PD for light reception and peripheral circuits such as an amplifier circuit may be integrated in the same chip.
【０００５】半導体チップで提供された受光素子２のホ
トダイオードＰＤは、半導体チップの表面に対して垂直
方向に光を受ける構造になっている。そのため、受光素
子２、発光素子３共に、半導体チップに対して垂直に光
信号６を発光／受光する構造になっており、該光信号６
の集光のために各素子の上方に、半球体レンズ４、５を
樹脂で形成している。The photodiode PD of the light receiving element 2 provided on a semiconductor chip has a structure for receiving light in a direction perpendicular to the surface of the semiconductor chip. Therefore, both the light receiving element 2 and the light emitting element 3 are configured to emit / receive the optical signal 6 perpendicular to the semiconductor chip.
Hemispherical lenses 4 and 5 are formed of resin above each element for condensing light.
【０００６】[0006]
【発明が解決しようとする課題】電子機器における軽薄
短小化の要求に対応するためには、プリント基板上に固
着する電子部品自体の高さを制限することが不可欠であ
る。しかしながら、光信号６がプリント基板に対して垂
直方向に導入するように図４の装置本体１を実装する
と、レンズ４、５の存在等により装置本体１の高さが高
く、全体の薄形化が困難である欠点があった。In order to meet the demand for lighter, thinner and smaller electronic devices, it is essential to limit the height of the electronic component itself fixed on the printed circuit board. However, when the apparatus main body 1 of FIG. 4 is mounted so that the optical signal 6 is introduced in a direction perpendicular to the printed circuit board, the height of the apparatus main body 1 is increased due to the presence of the lenses 4 and 5, and the overall thickness is reduced There was a drawback that was difficult.
【０００７】一方、図５に示すようにリードを折り曲げ
てレンズ４、５を横にすることで、プリント基板７に対
して水平方向に光信号６を導入する様にする事も可能で
ある。しかし、受光素子２と発光素子３の半導体チップ
を垂直に立てるようにして実装することから、実装時の
高さを半導体チップの大きさ以下にすることが原理的に
不可能であり、やはり薄形化が困難である欠点があっ
た。On the other hand, as shown in FIG. 5, it is also possible to introduce the optical signal 6 in the horizontal direction with respect to the printed circuit board 7 by bending the leads to make the lenses 4 and 5 horizontal. However, since the semiconductor chips of the light receiving element 2 and the light emitting element 3 are mounted so as to stand vertically, it is impossible in principle to make the mounting height less than the size of the semiconductor chip. There was a drawback that shaping was difficult.
【０００８】[0008]
【課題を解決するための手段】本発明は前述の課題に鑑
みて成され、少なくとも１つの発光素子を固定するアイ
ランドと、前記アイランドの裏面側を露出するように前
記発光素子を封止した封止体と、を具備する半導体装置
を基板上に実装した半導体装置の実装構造であって、前
記基板の表面に金属薄膜を形成し、前記金属薄膜の表面
に前記アイランドの裏面を熱的に結合するように前記封
止体を固定することを特徴とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has an island for fixing at least one light-emitting element, and a seal for sealing the light-emitting element so as to expose the back side of the island. A mounting structure of a semiconductor device having a semiconductor device including a stationary body mounted on a substrate, wherein a metal thin film is formed on a surface of the substrate, and a back surface of the island is thermally coupled to a surface of the metal thin film. The sealing body is fixed so as to perform the above.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実装構造の説明に
先立ち、実装する半導体装置の構造を説明する。本実施
の形態で用いる半導体装置は、例えば、受光素子２と発
光素子３とを１つのパッケージに収納したもので、図２
にその構造を示す（Ａ）平面図と（Ｂ）ＡＡ線断面図
を、図３に裏面側から見たときの平面図を示した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing the mounting structure of the present invention, the structure of a semiconductor device to be mounted will be described. The semiconductor device used in the present embodiment is, for example, one in which the light receiving element 2 and the light emitting element 3 are housed in one package.
(A) is a plan view showing the structure, and (B) is a cross-sectional view taken along the line AA. FIG. 3 is a plan view as viewed from the back side.
【００１０】これらの図中、２１は受光素子２を搭載す
るアイランド、２２は発光素子３を搭載するアイラン
ド、２３は外部接続用のリード端子を各々示している。
これらは鉄または銅系の素材からなるリードフレームに
よって提供されており、各アイランド２１、２２の表面
に受光素子２と発光素子３が半田などの接着剤で固着さ
れている。In these figures, 21 is an island on which the light receiving element 2 is mounted, 22 is an island on which the light emitting element 3 is mounted, and 23 is a lead terminal for external connection.
These are provided by a lead frame made of an iron or copper-based material, and the light receiving element 2 and the light emitting element 3 are fixed to the surface of each of the islands 21 and 22 with an adhesive such as solder.
【００１１】受光素子２は、半導体チップとして提供さ
れたＰＩＮホトダイオード等であり、周辺の駆動回路等
を同一チップ上に集積化したものでもよい。図中の符号
ＰＤは受光素子２のホトダイオード部分（受光面）を示
している。半導体チップの表面には電極パッドが形成さ
れ、ボンディングワイヤ２４によって電極パッドとリー
ド２３とが接続されている。The light receiving element 2 is a PIN photodiode or the like provided as a semiconductor chip, and a peripheral driving circuit or the like may be integrated on the same chip. Reference numeral PD in the drawing indicates a photodiode portion (light receiving surface) of the light receiving element 2. Electrode pads are formed on the surface of the semiconductor chip, and the electrode pads and the leads 23 are connected by bonding wires 24.
【００１２】発光素子３は、半導体チップとして提供さ
れた、例えば波長８７０ｎｍの赤外光を発光するＬＥＤ
チップである。ＬＥＤはチップの全体で発光し、全方位
に光が発散する素子である。そのため、チップを固着す
るアイランド２２を円錐形の「お椀」のような形状に加
工し、アイランド２２の中心部に固着した発光素子３か
らの光信号６をアイランド２２の傾斜した側壁で上方向
に反射させ、光を集めるような構造としている。前記ア
イランド２２はアノードまたはカソードの一方の端子と
なり、チップ表面に形成した電極パッドが他方の端子と
なる。他方の端子となる電極パッドは、ボンディングワ
イヤ２４により所定の箇所に接続されている。The light emitting element 3 is an LED provided as a semiconductor chip and emitting, for example, infrared light having a wavelength of 870 nm.
Chip. An LED is an element that emits light in the entire chip and emits light in all directions. Therefore, the island 22 to which the chip is fixed is processed into a shape like a conical “bowl”, and the optical signal 6 from the light emitting element 3 fixed to the center of the island 22 is directed upward by the inclined side wall of the island 22. It has a structure that reflects light and collects light. The island 22 serves as one terminal of the anode or the cathode, and the electrode pad formed on the chip surface serves as the other terminal. The electrode pad serving as the other terminal is connected to a predetermined location by a bonding wire 24.
【００１３】各アイランド２１、２２に固着された発光
素子２と受光素子３は、リード２３の先端部を含めて赤
外光あるいは紫外光に対して透明な樹脂でトランスファ
ーモールドされる。樹脂は封止体２５を構成し、封止体
２５の一表面には図３に示したように、アイランド２
１、２２の裏面が封止体２５表面と同一平面を成して露
出する。リード２３は封止体２５の一側面２５ａの中間
から外部に導出され、表面実装用途に適するように、Ｚ
字型に折り曲げられている。The light emitting element 2 and the light receiving element 3 fixed to each of the islands 21 and 22 are transfer-molded with a resin transparent to infrared light or ultraviolet light including the tip of the lead 23. The resin constitutes the sealing body 25, and as shown in FIG.
The back surfaces 1 and 22 are exposed in the same plane as the front surface of the sealing body 25. The lead 23 is led out from the middle of one side surface 25a of the sealing body 25, and is set to Z
It is folded into a letter shape.
【００１４】そして、受光素子２のホトダイオード部分
ＰＤの上部には、樹脂を凹ませた凹部２６を形成し、凹
部２６の側壁によって反射面２７を構成している。この
反射面２７は、封止体２５の他の側面２５ｂから受光素
子２の表面に対して水平に入射した光信号６を、垂直下
方向に反射させて受光素子２のホトダイオード部分ＰＤ
に到達させる役割を果たす。反射面２７は、その境界に
おける材料の屈折率の違いにより反射面となり、封止体
２５の全体が梨地加工されているのに対して、反射面２
７の表面はそれより表面荒さが小さい鏡面加工としてい
る。反射率を向上するために、反射面２７の表面を遮光
性の金属被膜などで覆っても良い。反射面２７を形成す
る凹部２７は、封止体２５をトランスファーモールドす
る際に、金型に凹部２６に対応する雄型部分を形成して
おくことによって形成するか、あるいは完成後に封止体
２５の表面を削ることで形成される。A concave portion 26 formed by denting the resin is formed above the photodiode portion PD of the light receiving element 2, and a reflective surface 27 is formed by the side wall of the concave portion 26. The reflecting surface 27 reflects the optical signal 6 horizontally incident on the surface of the light receiving element 2 from the other side surface 25b of the sealing body 25 in a vertically downward direction, thereby forming a photodiode portion PD of the light receiving element 2.
Play the role of reaching. The reflecting surface 27 becomes a reflecting surface due to the difference in the refractive index of the material at the boundary, and the entirety of the sealing body 25 is satin-finished.
The surface 7 is mirror-finished with a smaller surface roughness. In order to improve the reflectance, the surface of the reflection surface 27 may be covered with a light-shielding metal film or the like. The concave portion 27 forming the reflection surface 27 is formed by forming a male portion corresponding to the concave portion 26 in a mold when transfer molding the sealing body 25, or the sealing body 25 after completion. Formed by shaving the surface of
【００１５】更に、封止体２５の他の側面２５ｂには、
凸状のレンズ２８を形成している。レンズ２８は、反射
面２７での反射を考慮した上で、受光素子２のホトダイ
オード部分ＰＤの表面か或いはそれよりもやや深い位置
に焦点を持つような略円筒形の凸曲面（装置の外部から
観測して）とほぼ垂直な側壁を持つような形状で加工さ
れている。そして、図２（Ａ）に記載した光信号６の経
路からも明瞭に理解される様に、封止体２５の他の側面
２５ｂから導入した光信号６を、円筒曲面の中心軸に向
かって集光する役割を果たす。このレンズ２８は、封止
体２５を樹脂封止する際に、封止体２５と一体化するよ
うに形成するのが簡便であり、また、反射面２７と同様
に鏡面加工されている。Further, on the other side surface 25b of the sealing body 25,
A convex lens 28 is formed. The lens 28 is a substantially cylindrical convex curved surface having a focal point on the surface of the photodiode portion PD of the light receiving element 2 or a slightly deeper position in consideration of the reflection on the reflection surface 27 (from the outside of the device). (Observed) and processed so as to have sidewalls that are almost vertical. Then, as clearly understood from the path of the optical signal 6 described in FIG. 2A, the optical signal 6 introduced from the other side surface 25b of the sealing body 25 is directed toward the central axis of the cylindrical curved surface. It plays the role of collecting light. This lens 28 is simply formed so as to be integrated with the sealing body 25 when the sealing body 25 is sealed with a resin, and is mirror-finished like the reflection surface 27.
【００１６】尚、凸状のレンズ２８は、上下金型からの
樹脂の剥離性を考慮して、図２（Ｂ）に示したように、
その側壁に１〜５度のテーパ角度θを持たせても良い。The convex lens 28 is formed by taking into consideration the releasability of the resin from the upper and lower molds, as shown in FIG.
The side wall may have a taper angle θ of 1 to 5 degrees.
【００１７】上記の受光素子２に対して、発光素子３側
にも同様に反射面２７と凸状のレンズ２８を配置する。
受光素子２側とはその曲率などの設計を異ならせるため
に各々別個に設ける事が可能である。受光素子２とは光
信号６の方向が逆であり、伝搬経路としては同じであ
る。つまり、発光素子３から発光した信号光６を反射面
２７で反射し、レンズ２８を介して封止体２５の側壁２
５ｂから外部に出射する機能を持つ。A reflection surface 27 and a convex lens 28 are similarly arranged on the light emitting element 3 side with respect to the light receiving element 2 described above.
The light-receiving element 2 can be provided separately from the light-receiving element 2 in order to make the design such as its curvature different. The direction of the optical signal 6 is opposite to that of the light receiving element 2, and the propagation path is the same. That is, the signal light 6 emitted from the light emitting element 3 is reflected by the reflection surface 27, and the side wall 2 of the sealing body 25 is
5b has a function of emitting light to the outside.
【００１８】この様に、光信号６の伝達経路を折り曲げ
ることによって、係る装置をプリント基板上に表面実装
した時に、封止体２５の側面２５ｂから光信号６を伝搬
することができ、これによってプリント基板全体の高さ
を低く抑えることができ、電子機器の薄形化を推進する
ことができる。By bending the transmission path of the optical signal 6 as described above, the optical signal 6 can be propagated from the side surface 25b of the sealing body 25 when the device is surface-mounted on a printed circuit board. The height of the entire printed circuit board can be kept low, and thinning of electronic devices can be promoted.
【００１９】尚、光半導体装置としては、受光素子２と
発光素子３の両方を封止した構造の他、発光素子３だけ
を封止した装置であっても良い。また、反射面２７を形
成するための形態として、反射面２７を持つ部分を凸状
に突起させたような形態でも良い。更に、レンズ２８の
形態は、円筒形レンズの他、球体レンズでも良い事は言
うまでもない。The optical semiconductor device may have a structure in which both the light receiving element 2 and the light emitting element 3 are sealed, or a device in which only the light emitting element 3 is sealed. Further, as a form for forming the reflection surface 27, a form in which a portion having the reflection surface 27 is projected in a convex shape may be used. Furthermore, it goes without saying that the form of the lens 28 may be a spherical lens other than a cylindrical lens.
【００２０】而して、受光・発光素子２、３の上部に光
信号６を曲折する反射面２７を設けた半導体装置は、半
導体チップを「横置き」にできるので、封止体２５の高
さｔを小さくできるメリットがある。例えば、図４、図
５に示した従来の装置ではレンズ４、５の存在などによ
り４ｍｍ以下の高さを得ることが困難であったのに対
し、図２、図３に示した半導体装置では、装置全体の高
さｔを１．５ｍｍ程度にまで減じることが容易となっ
た。In the semiconductor device provided with the reflection surface 27 for bending the optical signal 6 above the light receiving / emitting elements 2 and 3, the semiconductor chip can be placed "laterally". There is an advantage that t can be reduced. For example, in the conventional devices shown in FIGS. 4 and 5, it is difficult to obtain a height of 4 mm or less due to the existence of the lenses 4 and 5, whereas in the semiconductor device shown in FIGS. In addition, the height t of the entire apparatus can be easily reduced to about 1.5 mm.
【００２１】以下に、上述の半導体装置を実装した、本
発明の１実施の形態を説明する。図１（Ａ）はプリント
基板３０の金属薄膜パターンを示す平面図で、図１
（Ｂ）（Ｃ）は実装時の半導体装置を示す断面図であ
る。尚、図１（Ｂ）は発光素子３の部分を示す断面図、
図１（Ｃ）は受光素子２の部分を示す断面図である。Hereinafter, an embodiment of the present invention in which the above-described semiconductor device is mounted will be described. FIG. 1A is a plan view showing a metal thin film pattern of the printed circuit board 30.
(B) and (C) are cross-sectional views showing the semiconductor device at the time of mounting. FIG. 1B is a cross-sectional view illustrating a portion of the light emitting element 3.
FIG. 1C is a cross-sectional view illustrating a portion of the light receiving element 2.
【００２２】図１（Ａ）を参照して、各電子部品を設置
するためのプリント基板３０の表面には、封止体２５の
各リード端子２３に対応するプリント配線３１と、アイ
ランド２１に対応するプリント配線３２、およびアイラ
ンド２２に対応するプリント配線３３が描画されてい
る。基板３０の表面には他にも、各電子部品間の回路接
続を行うためのプリント配線（図示せず）が多数描画さ
れている。プリント配線３１が各電子部品間の電気接続
を行うためのものであるのに対し、プリント配線３２、
３３は電気的に独立した島状のパターンで描画されてい
る。もちろん、回路素子間接続を行うためのパターンと
して兼用しても良い。Referring to FIG. 1A, a printed wiring board 31 corresponding to each lead terminal 23 of the sealing body 25 and a printed wiring board 31 corresponding to the A printed wiring 32 corresponding to the island 22 and a printed wiring 33 corresponding to the island 22 are drawn. In addition, a large number of printed wirings (not shown) for connecting circuits between electronic components are drawn on the surface of the substrate 30. Whereas the printed wiring 31 is for making electrical connection between electronic components, the printed wiring 32,
Reference numeral 33 denotes an electrically independent island pattern. Of course, it may be used also as a pattern for making connection between circuit elements.
【００２３】プリント配線３１、３２、３３に対して、
封止体２５を位置合わせして、その上に設置する。各リ
ード端子２３とプリント配線３１とが図示接続箇所３４
で半田付け固定され、加えて、アイランド２１とプリン
ト配線３２とが接続箇所３５で、アイランド２２とプリ
ント配線３３とが接続箇所３６で各々半田付け固定され
る。プリント配線３２、３３は少なくとも各アイランド
２１、２２よりも大きな面積で描画されている。封止体
２５はレンズ２８が外方を向くように基板３０の終端付
近に設置される。必要に応じて、レンズ２８の前方に光
学窓や光学レンズが配置される。尚、図１（Ｂ）によ
り、発光素子３を固定するアイランド２２の形状、即ち
円錐形の形状と、光信号６をアイランドの側壁２２ａで
反射して垂直方向に集光する機能とが理解される。For the printed wiring lines 31, 32, 33,
The sealing body 25 is positioned and installed thereon. Each lead terminal 23 and the printed wiring 31 are connected to each other at a connection point 34 shown in the figure.
In addition, the island 21 and the printed wiring 32 are fixed by soldering at a connection point 35, and the island 22 and the printed wiring 33 are fixed by soldering at a connection point 36. The printed wirings 32 and 33 are drawn with at least an area larger than each of the islands 21 and 22. The sealing body 25 is installed near the end of the substrate 30 so that the lens 28 faces outward. An optical window and an optical lens are arranged in front of the lens 28 as necessary. 1B, the shape of the island 22 for fixing the light emitting element 3, that is, the conical shape, and the function of reflecting the optical signal 6 on the side wall 22a of the island and condensing it in the vertical direction are understood. You.
【００２４】各アイランド２１、２２の裏面を露出して
プリント配線３２、３３に半田付けすることは、以下の
効果を生む。第１に、リード端子２３とアイランド２
１、２２とで基板３０上に表面実装するので、図１
（Ｂ）に符号３７で示した封止体２５の上下方向のぶれ
を防止できる。このことは、反射させた光信号６の方向
性を確定し、実装時のぶれを防止する効果を生む。第２
に、半田付けによって熱的にも結合させたので、特に発
光素子３において、その放熱特性を改善できる効果を生
む。上記の半導体装置は、光信号６の伝達経路を屈折さ
せたことにより薄形化が可能な装置であるものの、封止
体２５を薄形化することにより樹脂の全体量が少なくな
り、その分だけ樹脂の熱容量が小さくなるものである。
ＬＥＤ素子は動作電流が１００〜４００ｍＡと比較的大
きく、その分発熱が大きいので、樹脂の熱容量が小さく
なることは、ＬＥＤチップの温度上昇を招く。本発明で
は、アイランド２２をプリント配線３３に熱的に結合す
ることによって、ＬＥＤチップの放熱特性を改善したも
のである。これにより、ＬＥＤ素子の発光特性を安定さ
せることができる。Exposing the back surfaces of the islands 21 and 22 and soldering them to the printed wirings 32 and 33 produces the following effects. First, the lead terminal 23 and the island 2
1 and 22 are surface-mounted on a substrate 30.
The vertical movement of the sealing body 25 indicated by the reference numeral 37 in (B) can be prevented. This has the effect of determining the directionality of the reflected optical signal 6 and preventing blurring during mounting. Second
In addition, since the light-emitting element 3 is thermally coupled by soldering, the effect of improving the heat radiation characteristics of the light-emitting element 3 is produced. Although the above-described semiconductor device is a device that can be made thin by refracting the transmission path of the optical signal 6, the thinning of the sealing body 25 reduces the total amount of resin, and accordingly, Only the heat capacity of the resin is reduced.
Since the LED element has a relatively large operating current of 100 to 400 mA and generates a large amount of heat, a decrease in the heat capacity of the resin causes an increase in the temperature of the LED chip. In the present invention, the island 22 is thermally coupled to the printed wiring 33 to improve the heat radiation characteristics of the LED chip. Thereby, the light emission characteristics of the LED element can be stabilized.
【００２５】このように、封止体２５の内部で光信号６
を曲折する半導体装置を実装することで、筐体の大幅な
薄形化が可能である。そして、アイランド２２裏面をプ
リント配線３３に接続することによって、封止体２５の
上下方向のぶれを解消し、更には発光素子の放熱性を改
善できるものである。As described above, the optical signal 6 inside the sealing body 25 is
By mounting a semiconductor device that bends the above, the housing can be significantly thinned. Then, by connecting the back surface of the island 22 to the printed wiring 33, the vertical displacement of the sealing body 25 can be eliminated, and the heat dissipation of the light emitting element can be improved.
【００２６】[0026]
【発明の効果】以上説明したように、本発明によれば、
反射面２７を設けることにより光信号６を反射させて受
光素子２に到達させる構成としたので、樹脂の側面２５
ｂから光信号６の出入斜を行える光半導体装置を実現で
きる利点を有する。この装置は、封止体２５の全体の高
さを低くできるので、プリント基板３０に実装したとき
に筐体３２の大幅な薄形化を実現できるものである。As described above, according to the present invention,
Since the optical signal 6 is reflected and reaches the light receiving element 2 by providing the reflection surface 27, the side surface 25 of the resin is used.
This has an advantage that an optical semiconductor device capable of entering and exiting the optical signal 6 from b can be realized. In this device, since the entire height of the sealing body 25 can be reduced, the housing 32 can be significantly thinned when mounted on the printed circuit board 30.
【００２７】また、アイランド２２裏面をプリント配線
３３に半田付け固定した構成としたことにより、光信号
６の方向性のぶれをなくし、発光素子３の発光特性のば
らつきがない、実装構造を得ることができるものであ
る。Also, by adopting a configuration in which the back surface of the island 22 is fixed to the printed wiring 33 by soldering, it is possible to eliminate the directional fluctuation of the optical signal 6 and obtain a mounting structure in which the light emitting characteristics of the light emitting element 3 are not varied. Can be done.
【図１】本発明を説明するための（Ａ）平面図、（Ｂ）
断面図、（Ｃ）断面図である。FIG. 1A is a plan view for explaining the present invention, and FIG.
It is sectional drawing, (C) sectional drawing.
【図２】本発明を説明する（Ａ）平面図、（Ｂ）断面図
である。2A and 2B are a plan view and a cross-sectional view illustrating the present invention.
【図３】本発明を説明する平面図である。FIG. 3 is a plan view illustrating the present invention.
【図４】従来例を説明する斜視図である。FIG. 4 is a perspective view illustrating a conventional example.
【図５】従来例を説明する斜視図である。FIG. 5 is a perspective view illustrating a conventional example.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 落合 公 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 井野口 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 石川 勉 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 関口 智 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 小堀 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 Ｆターム(参考） 5F041 AA14 AA33 AA38 DA03 DA07 DA17 DA22 DA25 DA26 DA43 DA55 DA57 DA83 EE17 5F088 AA03 BA20 EA09 JA02 JA06 JA10 LA01 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Koichi Ochiai 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Hiroshi Inoguchi 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Tsutomu Ishikawa 2-5-5 Keihan Hondori, Moriguchi City, Osaka Prefecture (72) Inventor Satoshi Sekiguchi 2 Keihanhondori, Moriguchi City, Osaka Prefecture 5-5-5 Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Kobori 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term (reference) 5F041 AA14 AA33 AA38 DA03 DA07 DA17 DA22 DA25 DA26 DA43 DA55 DA57 DA83 EE17 5F088 AA03 BA20 EA09 JA02 JA06 JA10 LA01
Claims (3)
イランドと、前記アイランドの裏面側を露出するように
前記発光素子を封止した封止体と、を具備する半導体装
置を基板上に実装した半導体装置の実装構造であって、 前記基板の表面に金属薄膜を形成し、前記金属薄膜の表
面に前記アイランドの裏面を熱的に結合するように前記
封止体を固定することを特徴とする半導体装置の実装構
造。1. A semiconductor in which a semiconductor device including an island for fixing at least one light emitting element and a sealing body sealing the light emitting element so as to expose a back side of the island is mounted on a substrate. A semiconductor mounting structure, wherein a metal thin film is formed on a surface of the substrate, and the sealing body is fixed so as to thermally couple a back surface of the island to a surface of the metal thin film. Device mounting structure.
イランドと、前記アイランドの裏面側を露出するように
前記発光素子を封止した封止体と、前記発光素子の上部
の前記封止体に形成した反射面とを具備し、前記発光素
子から発せられた光信号を前記反射面で反射して前記発
光素子の表面に対して水平方向に前記光信号を伝搬する
半導体装置を、基板上に実装した半導体装置の実装構造
であって、 前記基板の表面に金属薄膜を形成し、前記金属薄膜の表
面に前記アイランドの裏面を熱的に結合するように前記
封止体を固定することを特徴とする半導体装置の実装構
造。2. An island for fixing at least one light emitting element, a sealing body sealing the light emitting element so as to expose a back side of the island, and a sealing body above the light emitting element. A semiconductor device for reflecting an optical signal emitted from the light emitting element on the reflective surface and propagating the optical signal in a horizontal direction with respect to the surface of the light emitting element, on a substrate. A mounting structure of the semiconductor device, wherein a metal thin film is formed on a surface of the substrate, and the sealing body is fixed so as to thermally couple a back surface of the island to a surface of the metal thin film. Semiconductor device mounting structure.
ド端子が導出され、前記リード端子と前記アイランド裏
面とで前記封止体の水平を維持するように前記基板上に
実装することを特徴とする請求項１または２記載の半導
体装置の実装構造。3. A lead terminal for external connection is derived from a side surface of the sealing body, and the lead terminal and the island back surface are mounted on the substrate so that the sealing body is kept horizontal. The mounting structure of the semiconductor device according to claim 1 or 2, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10243778A JP2000077686A (en) | 1998-08-28 | 1998-08-28 | Mounting structure of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10243778A JP2000077686A (en) | 1998-08-28 | 1998-08-28 | Mounting structure of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000077686A true JP2000077686A (en) | 2000-03-14 |
Family
ID=17108842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10243778A Pending JP2000077686A (en) | 1998-08-28 | 1998-08-28 | Mounting structure of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000077686A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100609592B1 (en) | 2004-11-19 | 2006-08-08 | 서울반도체 주식회사 | Side emitting led and lens suitable for the same |
| JP2007184642A (en) * | 2007-03-28 | 2007-07-19 | Toshiba Electronic Engineering Corp | Optical semiconductor package |
| US7317181B2 (en) | 2001-12-07 | 2008-01-08 | Hitachi Cable, Ltd. | Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit |
| JP2009200531A (en) * | 2001-04-10 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Leadframe and housing for radiation emitting component, radiation emitting component and method for manufacturing the component |
| JP2014042079A (en) * | 2013-12-02 | 2014-03-06 | Toshiba Electronic Engineering Corp | Optical semiconductor package |
-
1998
- 1998-08-28 JP JP10243778A patent/JP2000077686A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200531A (en) * | 2001-04-10 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Leadframe and housing for radiation emitting component, radiation emitting component and method for manufacturing the component |
| US7317181B2 (en) | 2001-12-07 | 2008-01-08 | Hitachi Cable, Ltd. | Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit |
| KR100609592B1 (en) | 2004-11-19 | 2006-08-08 | 서울반도체 주식회사 | Side emitting led and lens suitable for the same |
| JP2007184642A (en) * | 2007-03-28 | 2007-07-19 | Toshiba Electronic Engineering Corp | Optical semiconductor package |
| JP2014042079A (en) * | 2013-12-02 | 2014-03-06 | Toshiba Electronic Engineering Corp | Optical semiconductor package |
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