JP2000049365A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JP2000049365A JP2000049365A JP10216205A JP21620598A JP2000049365A JP 2000049365 A JP2000049365 A JP 2000049365A JP 10216205 A JP10216205 A JP 10216205A JP 21620598 A JP21620598 A JP 21620598A JP 2000049365 A JP2000049365 A JP 2000049365A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light receiving
- receiving element
- sealing body
- optical signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、受光素子を、また
は発光素子と受光素子とを樹脂封止した光半導体装置に
関するものであり、特に装置の薄形化に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which a light receiving element or a light emitting element and a light receiving element are sealed with a resin, and more particularly to a thin device.
【０００２】[0002]
【従来の技術】最近、サブノートパソコン、携帯情報端
末、電子スチルカメラ等のマルチメディア機器がめざま
しい発展を遂げている。これらの機器は、携帯性を求め
られることから外部とのインターフェースも簡便なもの
が要求され、そのために外部機器と本体とを赤外線信号
を介して送受信するＩｒＤＡ(Infrared Data Associati
on)規格を採用している機器が多い。2. Description of the Related Art Recently, multimedia equipment such as a sub-notebook personal computer, a portable information terminal, and an electronic still camera has been remarkably developed. Since these devices are required to be portable, a simple interface with the outside is required, and for that purpose, IrDA (Infrared Data Associati) that transmits and receives the external device and the main unit via infrared signals.
on) Many devices adopt the standard.
【０００３】この赤外線通信方式を採用するためには、
本体側及び携帯機器側の両方に、赤外線を発光する発光
素子、赤外線を受光する受光素子が必要となってくる。
発光素子と受光素子とは、それぞれ別個のパッケージと
して電子機器に組み込まれる場合もあるし、両者が１つ
のパッケージに収納されたモジュールとして供給される
場合もある。In order to adopt this infrared communication system,
A light emitting element that emits infrared light and a light receiving element that receives infrared light are required on both the main body side and the portable device side.
The light emitting element and the light receiving element may be incorporated in the electronic device as separate packages, respectively, or both may be supplied as a module housed in one package.
【０００４】図４に、発光素子と受光素子とを１つのパ
ッケージに収納した赤外線データ通信用のモジュール１
の例を示す。受光素子２と発光素子３は、それぞれ半導
体チップの形態で形成されており、その半導体チップに
ＬＥＤドライバやアンプ等が集積化される場合もある。
このモジュール１は、受光素子２、発光素子３共に、半
導体チップに対して垂直に光信号を発光／受光する構造
になっている。そのため各素子の上方に半球体レンズ
４、５を形成し、該レンズ４、５を介して外部と光信号
６の受発光を行っている。FIG. 4 shows a module 1 for infrared data communication in which a light emitting element and a light receiving element are housed in one package.
Here is an example. The light receiving element 2 and the light emitting element 3 are each formed in the form of a semiconductor chip, and an LED driver, an amplifier, and the like may be integrated on the semiconductor chip.
This module 1 has a structure in which both the light receiving element 2 and the light emitting element 3 emit / receive an optical signal perpendicular to the semiconductor chip. Therefore, hemispherical lenses 4 and 5 are formed above each element, and light signals 6 are transmitted and received to and from the outside via the lenses 4 and 5.
【０００５】[0005]
【発明が解決しようとする課題】電子機器における軽薄
短小化の要求に対応するためには、プリント基板上に固
着する電子部品事態の高さを制限することが不可欠であ
る。しかしながら、光信号６がプリント基板に対して垂
直方向に導入するように図４のモジュール１を実装する
と、モジュール１の更に上方に光学レンズ等を配置する
事などから、全体の薄形化が困難である欠点があった。
一方、プリント基板に対して水平方向に光信号６を導入
する事も可能ではあるが、受光素子２と発光素子３の半
導体チップを垂直に立てるようにして実装することか
ら、半導体チップの大きさ以下にすることが原理的に不
可能であり、やはり薄形化が困難である欠点があった。In order to respond to the demand for lighter, thinner and smaller electronic devices, it is essential to limit the height of electronic components fixed on a printed circuit board. However, when the module 1 of FIG. 4 is mounted so that the optical signal 6 is introduced in a direction perpendicular to the printed circuit board, it is difficult to reduce the overall thickness because an optical lens or the like is disposed further above the module 1. There was a disadvantage.
On the other hand, it is possible to introduce the optical signal 6 in the horizontal direction with respect to the printed circuit board. However, since the semiconductor chips of the light receiving element 2 and the light emitting element 3 are mounted vertically, the size of the semiconductor chip is large. It is impossible in principle to make the following, and there is also a disadvantage that it is difficult to reduce the thickness.
【０００６】[0006]
【課題を解決するための手段】本発明は前述の課題に鑑
みて成され、光信号が透過可能なる樹脂から成る封止体
の内部に、前記光信号を電気信号に変換する受光素子を
封止した受光ダイオード内蔵半導体装置において、前記
受光ダイオードの上部の前記封止体に、前記封止体の側
面から入射した光信号を反射して前記受光ダイオードに
到達させる反射面を形成し、前記光信号を入射させる封
止体側面を、その中心線が前記半導体チップの垂直方向
に対して平行に延在する円筒面の一部となるような湾曲
面に形成したことを特徴とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a light receiving element for converting an optical signal into an electric signal in a sealing body made of a resin through which the optical signal can pass. In the stopped semiconductor device with a built-in light-receiving diode, a reflecting surface for reflecting an optical signal incident from a side surface of the sealed body and reaching the light-receiving diode is formed on the sealing body above the light-receiving diode, The side surface of the sealing body on which a signal is incident is formed into a curved surface such that the center line thereof becomes a part of a cylindrical surface extending parallel to a vertical direction of the semiconductor chip. .
【０００７】[0007]
【発明の実施の形態】以下、本発明の第１の実施の形態
を図面を参照しながら、詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings.
【０００８】図１（Ａ）は本発明の構造を示す平面図、
図１（Ｂ）は図１（Ａ）のＡＡ線断面図、図２は本発明
の製品を示す斜視図である。FIG. 1A is a plan view showing the structure of the present invention.
1B is a sectional view taken along the line AA of FIG. 1A, and FIG. 2 is a perspective view showing a product of the present invention.
【０００９】これらの図中、２１は受光素子２を搭載す
るアイランド、２２は外部接続用のリード端子、を各々
示している。これらは鉄または銅系の素材からなるリー
ドフレームによって提供されており、アイランド２１の
表面に受光素子２が半田などの接着剤で固着されてい
る。受光素子２は、半導体チップとして提供されたＰＩ
Ｎホトダイオード等であり、周辺の駆動回路等を同一チ
ップ上に集積化したものでもよい。まら、符号ＰＤは受
光素子２のホトダイオード部分（受光面）を示してい
る。半導体チップの表面には電極としてボンディングパ
ッドが形成され、ボンディングワイヤ２３によってボン
ディングパッドとリード２２とが電気接続されている。
リード２２の先端部および発光素子２を含めたアイラン
ド２１は、赤外光あるいは紫外光に対して透明な樹脂で
トランスファーモールドされて、封止体２４を構成して
いる。アイランド２１はその裏面が封止体２４の表面と
同一平面を成して露出する様に固定されている。リード
２２は封止体２４の一側面２４ａから外部に導出され、
表面実装用途に適するように、Ｚ字型に折り曲げられて
いる。In these figures, 21 is an island on which the light receiving element 2 is mounted, and 22 is a lead terminal for external connection. These are provided by a lead frame made of an iron or copper-based material, and the light receiving element 2 is fixed to the surface of the island 21 with an adhesive such as solder. The light receiving element 2 is a PI provided as a semiconductor chip.
It may be an N photodiode or the like, in which peripheral drive circuits and the like are integrated on the same chip. Reference numeral PD denotes a photodiode portion (light receiving surface) of the light receiving element 2. Bonding pads are formed as electrodes on the surface of the semiconductor chip, and the bonding pads and the leads 22 are electrically connected by bonding wires 23.
The tip 21 of the lead 22 and the island 21 including the light emitting element 2 are transfer-molded with a resin transparent to infrared light or ultraviolet light to form a sealing body 24. The island 21 is fixed so that its back surface is exposed to be flush with the surface of the sealing body 24. The lead 22 is led out from one side surface 24a of the sealing body 24,
It is folded into a Z-shape to be suitable for surface mounting applications.
【００１０】而して、受光素子２のホトダイオード部分
ＰＤの上部には、樹脂を凹ませた溝２５を形成し、溝２
５の側壁によって反射面２６を構成している。反射面２
６は、受光素子２のホトダイオード部分ＰＤの表面か或
いはそれよりもやや遠方に焦点を持つ凹曲面としてお
り、円筒を４分の１にした様な形状で加工されている。
この凹曲面は、封止体２４をトランスファーモールドす
る際に、金型に溝２５に対応する部分を形成しておくこ
とによって形成するか、あるいは完成後に封止体２４の
表面を削ることで形成される。また、反射面２６は曲面
でなくともよく、単なる平面でも良い。更に、反射面を
形成する手法として、溝２５を形成する方法の他、図３
（Ａ）、図３（Ｂ）に示したような形態でも良い。尚、
同じ箇所に同じ符号を伏して説明を省略する。Thus, a groove 25 in which a resin is recessed is formed above the photodiode portion PD of the light receiving element 2.
The reflective surface 26 is constituted by the side wall 5. Reflective surface 2
Reference numeral 6 denotes a concave curved surface having a focal point at the surface of the photodiode portion PD of the light receiving element 2 or slightly farther than the surface, and is processed in a shape like a quarter of a cylinder.
The concave curved surface is formed by forming a portion corresponding to the groove 25 in a mold when transfer molding the sealing body 24, or by shaving the surface of the sealing body 24 after completion. Is done. Further, the reflection surface 26 need not be a curved surface, but may be a simple flat surface. Further, as a method of forming the reflection surface, in addition to the method of forming the groove 25, FIG.
(A) and the form shown in FIG. 3 (B) may be used. still,
The same reference numerals are used to denote the same parts, and the description is omitted.
【００１１】この反射面２６は、封止体２４の他の側面
２４ｂから図１（Ｂ）の図示矢印のように導入させた光
信号６を、屈曲させて受光素子２のホトダイオード部分
ＰＤに到達させる役割を果たす。反射面２６をパラボラ
状にすることによって、より多くの光信号６をホトダイ
オード部分ＰＤの表面に集光させることができる。光信
号６を集約させることにより、受光素子２の応答感度を
増大することができる。The reflecting surface 26 bends the optical signal 6 introduced from the other side surface 24b of the sealing body 24 as shown by the arrow in FIG. 1B and reaches the photodiode portion PD of the light receiving element 2. Play a role. By making the reflecting surface 26 parabolic, more optical signals 6 can be collected on the surface of the photodiode portion PD. By aggregating the optical signals 6, the response sensitivity of the light receiving element 2 can be increased.
【００１２】反射面２６は、その境界における材料の屈
折率の違いにより反射面となる。反射率を向上するため
に、反射面２６の表面を遮光性の金属被膜などで覆って
も良い。この被膜方法としては、半導体技術で使用され
る蒸着、スパッタ成膜が考えられ、他にはメッキが考え
られる。ここで注意を要する所は、前記金属皮膜による
リード２２間の短絡である。前者の二つの被膜方法で
は、リード２２間をマスキングする選択マスクを必要と
する。後者の様に、例えば無電解メッキを用い、溶液の
中に樹脂２４全体を浸してディップする場合は、リード
２２の導出部にマスキング用の樹脂を塗り、メッキした
後で樹脂を取り除けばよい。またディップ以外では、こ
の溶液を溝２５の部分のみに滴下してメッキさせても良
い。金属材料としては、金、Ａｌ、ニッケル等が考えら
れる。The reflecting surface 26 becomes a reflecting surface due to the difference in the refractive index of the material at the boundary. In order to improve the reflectance, the surface of the reflection surface 26 may be covered with a light-shielding metal film or the like. As the coating method, vapor deposition and sputter deposition used in semiconductor technology can be considered, and plating can also be considered. A point to be noted here is a short circuit between the leads 22 due to the metal film. The former two coating methods require a selective mask for masking between the leads 22. In the case of dipping by dipping the entire resin 24 in a solution using, for example, electroless plating as in the latter case, a resin for masking may be applied to the lead portion of the lead 22 and the resin may be removed after plating. In addition to the dip, this solution may be dropped only on the groove 25 for plating. As the metal material, gold, Al, nickel and the like can be considered.
【００１３】この様に、光信号６の伝達経路を略直角に
折り曲げることによって、係る装置をプリント基板上に
表面実装した時に、封止体２４の側面２４ｂから光信号
を導入することができ、これによってプリント基板全体
の高さを低く抑えることができ、電子機器の薄形化を推
進することができる。As described above, by bending the transmission path of the optical signal 6 at a substantially right angle, the optical signal can be introduced from the side surface 24b of the sealing body 24 when the device is surface-mounted on a printed circuit board. As a result, the height of the entire printed circuit board can be kept low, and thinning of the electronic device can be promoted.
【００１４】更に、封止体２４の他の側面２４ｂは、円
筒形状の外周面の一部となるような曲面で構成されてい
る。前記円筒形状は、受光素子２の垂直方向に対して平
行に延在する中心線を持つ。尚、他の側面２４ｂの全体
が曲面で構成される構成の他、側面２４ｂの一部が平坦
面で、その中央付近の一部が凸状に、同様の円筒曲面で
突出した構成でも良い。前記円筒形状の曲面の焦点は、
溝２５の反射面２６近傍に位置するように曲率と寸法を
あわせている。この曲面も又、トランスファーモールド
の金型で成型するか、或いは成型後に研磨して加工する
ことで形成する。Further, the other side surface 24b of the sealing body 24 is formed of a curved surface which becomes a part of the cylindrical outer peripheral surface. The cylindrical shape has a center line extending parallel to the vertical direction of the light receiving element 2. Note that, in addition to the configuration in which the other side surface 24b is entirely formed of a curved surface, a configuration in which a part of the side surface 24b is a flat surface, a portion near the center thereof is protruded, and a similar cylindrical curved surface may be used. The focal point of the cylindrical curved surface is
The curvature and the size are adjusted so as to be located near the reflecting surface 26 of the groove 25. This curved surface is also formed by molding using a transfer mold, or polishing and working after molding.
【００１５】係る構成によれば、側面２４ｂがレンズの
働きするので、外界からより多くの光信号６を集束させ
ることができ、ホトダイオード部ＰＤに到達する光信号
６の光強度を増大させることができる。これによって、
受光素子２の感度を増大することができる。According to this configuration, since the side surface 24b functions as a lens, more light signals 6 can be focused from the outside, and the light intensity of the light signal 6 reaching the photodiode portion PD can be increased. it can. by this,
The sensitivity of the light receiving element 2 can be increased.
【００１６】尚、光半導体装置としては、受光素子２と
発光素子３の両方を封止した構造であっても良い。両者
を１パッケージに収納する場合は、各々を別個のアイラ
ンド２１に設置し、発光素子３から発せられた光信号６
が反射面６で反射して、樹脂２４の側面２４ｂから出射
されるように、発光素子３と反射面２６との位置関係を
決定する。反射面２６の曲率や位置関係を、発光素子３
用の曲面と受光素子２用の曲面とに分離しても良い。Incidentally, the optical semiconductor device may have a structure in which both the light receiving element 2 and the light emitting element 3 are sealed. When both are housed in one package, each is installed on a separate island 21 and the optical signal 6
Is determined by the positional relationship between the light emitting element 3 and the reflective surface 26 such that the light is reflected by the reflective surface 6 and emitted from the side surface 24 b of the resin 24. The curvature and the positional relationship of the reflection surface 26 are determined by the light emitting element 3
And a curved surface for the light receiving element 2 may be separated.
【００１７】更に、上記の実施の形態において、リード
２２先端部の曲げる方向は上下どちらでも可能である。
リード２２の折り曲げ方向を図１（Ｂ）とは逆にして、
実装したときに受光素子２のチップが下を向く（プリン
ト基板側に向く）ように折り曲げておけば、アイランド
２１が金属で遮光性を持つので、外部からの余計な光の
入射による誤動作を抑制することができる。Further, in the above embodiment, the bending direction of the tip of the lead 22 can be either up or down.
The bending direction of the lead 22 is reversed from that of FIG.
If the light receiving element 2 is bent so that the chip of the light receiving element 2 faces downward (facing the printed circuit board side) when mounted, the island 21 is made of metal and has a light-shielding property. can do.
【００１８】[0018]
【発明の効果】本発明によれば、反射面２６を設けるこ
とにより光信号６を反射させて受光素子２に到達させる
構成としたので、樹脂の側面２４ｂから光信号６の出入
斜を行える光半導体モジュールを実現できる利点を有す
る。このモジュールは、プリント基板に実装したときに
全体的な薄形化を実現できるものである。According to the present invention, since the optical signal 6 is reflected by the provision of the reflection surface 26 and reaches the light receiving element 2, the light which can enter and exit the optical signal 6 from the side surface 24b of the resin can be obtained. There is an advantage that a semiconductor module can be realized. This module can realize an overall reduction in thickness when mounted on a printed circuit board.
【００１９】また、樹脂の側面２４ｂを、円筒形状の曲
面に仕上げることによって、より多くの光信号６を集光
することができ、これによって受光素子２の受光感度を
増大できる。Further, by finishing the side surface 24b of the resin into a cylindrical curved surface, more light signals 6 can be condensed, whereby the light receiving sensitivity of the light receiving element 2 can be increased.
【図１】本発明を説明する斜視図である。FIG. 1 is a perspective view illustrating the present invention.
【図２】本発明を説明する（Ａ）平面図、（Ｂ）断面図
である。2A and 2B are a plan view and a cross-sectional view illustrating the present invention.
【図３】本発明を説明する断面図である。FIG. 3 is a cross-sectional view illustrating the present invention.
【図４】従来の装置を示す斜視図である。FIG. 4 is a perspective view showing a conventional device.
フロントページの続き (72)発明者 新井 政至 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 小堀 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 国井 秀雄 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 高田 清 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 井野口 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 Ｆターム(参考） 5F088 AA01 BB10 HA09 JA06 LA01Continuation of the front page (72) Inventor Masatoshi Arai 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Kobori 2-5-5-1 Keihanhondori, Moriguchi-shi, Osaka No. Sanyo Electric Co., Ltd. (72) Inventor Hideo Kunii 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Pref. Sanyo Electric Co., Ltd. (72) Inventor Kiyoshi Takada 2-chome, Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Inoguchi 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in Sanyo Electric Co., Ltd. 5F088 AA01 BB10 HA09 JA06 LA01
Claims (2)
体の内部に、前記光信号を電気信号に変換する受光素子
を封止した光半導体装置において、 前記受光ダイオードの上部の前記封止体に、前記封止体
の側面から入射した光信号を反射して前記受光ダイオー
ドに到達させる反射面を形成し、 前記光信号を入射させる封止体側面を、その中心線が前
記半導体チップの垂直方向に対して平行に延在する円筒
面の一部となるような湾曲面に形成したことを特徴とす
る光半導体装置。1. An optical semiconductor device in which a light receiving element for converting an optical signal into an electric signal is sealed in a sealing body made of a resin through which an optical signal can be transmitted, wherein the sealing on an upper part of the light receiving diode is provided. The body has a reflecting surface that reflects an optical signal incident from a side surface of the sealing body and reaches the light-receiving diode. The side surface of the sealing body that receives the optical signal has a center line of the semiconductor chip. An optical semiconductor device characterized by being formed on a curved surface that becomes a part of a cylindrical surface extending parallel to a vertical direction.
内壁で構成されていることを特徴とする請求項１記載の
光半導体装置。2. The optical semiconductor device according to claim 1, wherein said reflection surface is constituted by an inner wall of a groove provided in said sealing body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10216205A JP2000049365A (en) | 1998-07-30 | 1998-07-30 | Photosemiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10216205A JP2000049365A (en) | 1998-07-30 | 1998-07-30 | Photosemiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000049365A true JP2000049365A (en) | 2000-02-18 |
Family
ID=16684929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10216205A Pending JP2000049365A (en) | 1998-07-30 | 1998-07-30 | Photosemiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000049365A (en) |
-
1998
- 1998-07-30 JP JP10216205A patent/JP2000049365A/en active Pending
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