JP2000068531A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JP2000068531A JP2000068531A JP10240698A JP24069898A JP2000068531A JP 2000068531 A JP2000068531 A JP 2000068531A JP 10240698 A JP10240698 A JP 10240698A JP 24069898 A JP24069898 A JP 24069898A JP 2000068531 A JP2000068531 A JP 2000068531A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor device
- optical signal
- light receiving
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、受光素子を、また
は発光素子と受光素子とを樹脂封止した光半導体装置に
関するものであり、特に装置の薄形化に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which a light receiving element or a light emitting element and a light receiving element are sealed with a resin, and more particularly to a thin device.
【0002】[0002]
【従来の技術】最近、サブノートパソコン、携帯情報端
末、電子スチルカメラ等のマルチメディア機器がめざま
しい発展を遂げている。これらの機器は、携帯性を求め
られることから外部とのデータ送受信にも簡便なものが
要求され、赤外線等の光信号を用いることによりコード
レスで外部機器と本体とを接続する装置を備えたものが
多い。その中でも光信号として波長が870nmの赤外
線を用いるIrDA(Infrared Data Association)規格
が最も普及している。2. Description of the Related Art Recently, multimedia equipment such as a sub-notebook personal computer, a portable information terminal, and an electronic still camera has been remarkably developed. These devices are required to be easy to transmit and receive data to and from the outside because they are required to be portable, and equipped with a device that connects the external device and the main unit in a cordless manner by using optical signals such as infrared rays. There are many. Among them, the IrDA (Infrared Data Association) standard using infrared light having a wavelength of 870 nm as an optical signal is most widely used.
【0003】IrDA通信を利用するためには、接続す
べき両方の機器に、赤外線信号を発する発光素子と、赤
外線信号を受ける受光素子とを備える必要がある。発光
素子と受光素子とは、それぞれ別個のパッケージとして
電子機器に組み込まれる場合もあるし、両者が1つのパ
ッケージに収納されたモジュールとして供給される場合
もある。In order to use IrDA communication, both devices to be connected need to be provided with a light emitting element for emitting an infrared signal and a light receiving element for receiving an infrared signal. The light emitting element and the light receiving element may be incorporated in the electronic device as separate packages, respectively, or both may be supplied as a module housed in one package.
【0004】図5に、発光素子と受光素子とを1つのパ
ッケージに収納した赤外線データ通信用の半導体装置の
例を示す(例えば、特開平10−70304号)。この
装置は、装置本体1内に、半導体チップの形態で提供さ
れた受光素子2と発光素子3とを収納したもので、少な
くとも赤外線に対して透明な樹脂で樹脂モールドしたも
のである。特に受光素子2においては、受光用のホトダ
イオードPDと、アンプ回路等の周辺回路とを同一チッ
プ内に集積化する場合もある。FIG. 5 shows an example of a semiconductor device for infrared data communication in which a light emitting element and a light receiving element are housed in one package (for example, Japanese Patent Application Laid-Open No. H10-70304). In this device, a light receiving element 2 and a light emitting element 3 provided in the form of a semiconductor chip are housed in a device main body 1, and are molded with a resin transparent to at least infrared rays. In particular, in the light receiving element 2, the photodiode PD for light reception and peripheral circuits such as an amplifier circuit may be integrated in the same chip.
【0005】半導体チップで提供された受光素子2のホ
トダイオードPDは、半導体チップの表面に対して垂直
方向に光を受ける構造になっている。そのため、受光素
子2、発光素子3共に、半導体チップに対して垂直に光
信号6を発光/受光する構造になっており、該光信号6
の集光のために各素子の上方に、半球体レンズ4、5を
樹脂で形成している。The photodiode PD of the light receiving element 2 provided on a semiconductor chip has a structure for receiving light in a direction perpendicular to the surface of the semiconductor chip. Therefore, both the light receiving element 2 and the light emitting element 3 are configured to emit / receive the optical signal 6 perpendicular to the semiconductor chip.
Hemispherical lenses 4 and 5 are formed of resin above each element for condensing light.
【0006】[0006]
【発明が解決しようとする課題】電子機器における軽薄
短小化の要求に対応するためには、プリント基板上に固
着する電子部品自体の高さを制限することが不可欠であ
る。しかしながら、光信号6がプリント基板に対して垂
直方向に導入するように図5の装置本体1を実装する
と、レンズ4、5の存在等により装置本体1の高さが高
く、全体の薄形化が困難である欠点があった。In order to meet the demand for lighter, thinner and smaller electronic devices, it is essential to limit the height of the electronic component itself fixed on the printed circuit board. However, when the device main body 1 of FIG. 5 is mounted so that the optical signal 6 is introduced in a direction perpendicular to the printed circuit board, the height of the device main body 1 is increased due to the presence of the lenses 4 and 5, and the overall thickness is reduced. There was a drawback that was difficult.
【0007】一方、図6に示すようにリードを折り曲げ
てレンズ4、5を横にすることで、プリント基板7に対
して水平方向に光信号6を導入する様にする事も可能で
ある。しかし、受光素子2と発光素子3の半導体チップ
を垂直に立てるようにして実装することから、実装時の
高さを半導体チップの大きさ以下にすることが原理的に
不可能であり、やはり薄形化が困難である欠点があっ
た。On the other hand, it is also possible to introduce the optical signal 6 in the horizontal direction with respect to the printed circuit board 7 by bending the leads and turning the lenses 4 and 5 sideways as shown in FIG. However, since the semiconductor chips of the light receiving element 2 and the light emitting element 3 are mounted so as to stand vertically, it is impossible in principle to make the mounting height less than the size of the semiconductor chip. There was a drawback that shaping was difficult.
【0008】[0008]
【課題を解決するための手段】本発明は前述の課題に鑑
みて成され、光信号が透過可能なる封止体の内部に、前
記光信号を電気信号に変換する受光素子を封止した光半
導体装置において、前記受光ダイオードの上部の前記封
止体に、前記封止体の側面から入射した光信号を反射し
て前記受光ダイオードに到達させる反射面を形成し、前
記光信号が入射する封止体の側面に凸状のレンズを形成
し、前記反射面と前記凸状のレンズとを組み合わせるこ
とで、前記受光素子の表面に対して垂直方向の集光と水
平方向の集光とを行うことを特徴とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a light-receiving element in which a light-receiving element for converting an optical signal into an electric signal is sealed inside a sealing body through which the optical signal can be transmitted. In the semiconductor device, a reflection surface that reflects an optical signal incident from a side surface of the sealing body and reaches the light receiving diode is formed on the sealing body above the light receiving diode, and a sealing surface on which the optical signal is incident. By forming a convex lens on the side surface of the stationary body and combining the reflection surface and the convex lens, light is collected in the vertical direction and the light in the horizontal direction with respect to the surface of the light receiving element. It is characterized by the following.
【0009】[0009]
【発明の実施の形態】以下、本発明の第1の実施の形態
を図面を参照しながら、詳細に説明する。本実施の形態
は受光素子2と発光素子3とを1つのパッケージに収納
したもので、図1(A)は本発明の構造を示す平面図、
図1(B)はAA線断面図、図2は主要部分を示す斜視
図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. In this embodiment mode, a light receiving element 2 and a light emitting element 3 are housed in one package. FIG. 1A is a plan view showing a structure of the present invention.
FIG. 1B is a sectional view taken along line AA, and FIG. 2 is a perspective view showing a main part.
【0010】これらの図中、21は受光素子2を搭載す
るアイランド、22は発光素子3を搭載するアイラン
ド、23は外部接続用のリード端子を各々示している。
これらは鉄または銅系の素材からなるリードフレームに
よって提供されており、各アイランド21、22の表面
に受光素子2と発光素子3が半田などの接着剤で固着さ
れている。In these figures, 21 is an island on which the light receiving element 2 is mounted, 22 is an island on which the light emitting element 3 is mounted, and 23 is a lead terminal for external connection.
These are provided by a lead frame made of an iron or copper-based material, and the light receiving element 2 and the light emitting element 3 are fixed to the surface of each of the islands 21 and 22 with an adhesive such as solder.
【0011】受光素子2は、半導体チップとして提供さ
れたPINホトダイオード等であり、周辺の駆動回路等
を同一チップ上に集積化したものでもよい。図中の符号
PDは受光素子2のホトダイオード部分(受光面)を示
している。半導体チップの表面には電極パッドが形成さ
れ、ボンディングワイヤ24によって電極パッドとリー
ド23とが接続されている。The light receiving element 2 is a PIN photodiode or the like provided as a semiconductor chip, and a peripheral driving circuit or the like may be integrated on the same chip. Reference numeral PD in the drawing indicates a photodiode portion (light receiving surface) of the light receiving element 2. Electrode pads are formed on the surface of the semiconductor chip, and the electrode pads and the leads 23 are connected by bonding wires 24.
【0012】発光素子3は、例えば波長870nmの赤
外光を発光するLEDダイオードチップである。LED
はチップの全体で発光し、全方位に光が発散する素子で
ある。そのため、チップを固着するアイランド22を円
錐形の「お椀」のような形状に加工し、アイランド22
の中心部に固着した発光素子3からの光信号6をアイラ
ンド22の傾斜した側壁で上方向に反射させ、光を集め
るような構造としている。前記アイランド22はアノー
ドまたはカソードの一方の端子となり、チップ表面に形
成した電極パッドが他方の端子となる。他方の端子とな
る電極パッドは、ボンディングワイヤ24により所定の
箇所に接続されている。The light emitting element 3 is, for example, an LED diode chip that emits infrared light having a wavelength of 870 nm. LED
Is an element that emits light in the entire chip and emits light in all directions. Therefore, the island 22 to which the chip is fixed is processed into a shape like a conical “bowl”, and the island 22 is fixed.
The optical signal 6 from the light emitting element 3 fixed to the center of the island 22 is reflected upward by the inclined side wall of the island 22 to collect light. The island 22 serves as one terminal of the anode or the cathode, and the electrode pad formed on the chip surface serves as the other terminal. The electrode pad serving as the other terminal is connected to a predetermined location by a bonding wire 24.
【0013】各アイランド21、22に固着された発光
素子2と受光素子3は、リード23の先端部を含めて赤
外光あるいは紫外光に対して透明な樹脂でトランスファ
ーモールドされる。樹脂は封止体25を構成し、封止体
25の一表面にはアイランド21、22の裏面が封止体
25表面と同一平面を成して露出する。リード23は封
止体25の一側面25aの中間から外部に導出され、表
面実装用途に適するように、Z字型に折り曲げられてい
る。The light emitting element 2 and the light receiving element 3 fixed to each of the islands 21 and 22 are transfer-molded with a resin transparent to infrared light or ultraviolet light including the tip of the lead 23. The resin forms the sealing body 25, and the back surfaces of the islands 21 and 22 are exposed on one surface of the sealing body 25 so as to be flush with the surface of the sealing body 25. The lead 23 is led out from the middle of one side surface 25a of the sealing body 25, and is bent in a Z-shape so as to be suitable for surface mounting use.
【0014】而して、受光素子2のホトダイオード部分
PDの上部には、樹脂を凹ませた溝26を形成し、溝2
6の側壁によって反射面27を構成している。また、封
止体25の他の側面25bには、凸状のレンズ28を形
成している。反射面27と凸状のレンズ28の近傍を図
2に示した。Thus, a groove 26 in which a resin is recessed is formed above the photodiode portion PD of the light receiving element 2.
The reflecting surface 27 is constituted by the side wall of the sixth. A convex lens 28 is formed on the other side surface 25b of the sealing body 25. The vicinity of the reflection surface 27 and the convex lens 28 is shown in FIG.
【0015】図2を参照して、反射面27は、受光素子
2のホトダイオード部分PDの表面か或いはそれよりも
やや深い位置に焦点を持つような略円筒形の凹曲面(封
止体25の内部から観測して)としており、受光素子2
の表面に対して水平方向(図示x方向)に延在する中心
線29と半径r1を持つ様な形状で加工されている。こ
の凹曲面は、封止体25をトランスファーモールドする
際に、金型に溝26に対応する雄型部分を形成しておく
ことによって形成するか、あるいは完成後に封止体25
の表面を削ることで形成される。Referring to FIG. 2, the reflecting surface 27 has a substantially cylindrical concave curved surface (of the sealing body 25) having a focal point at the surface of the photodiode portion PD of the light receiving element 2 or at a position slightly deeper than the surface. (Observed from inside))
Is formed in such a shape as to have a center line 29 extending in the horizontal direction (x direction in the drawing) and a radius r1 with respect to the surface. The concave curved surface may be formed by forming a male portion corresponding to the groove 26 in the mold when transfer molding the sealing body 25, or may be performed after the sealing body 25 is completed.
Formed by shaving the surface of
【0016】そして、反射面27は、封止体25の他の
側面25bから導入させた光信号6を、反射させて受光
素子2のホトダイオード部分PDに到達させる役割を果
たす。この時、反射面27をパラボラ状にすることによ
って、より多くの光信号6をホトダイオード部分PDの
表面に集光する。反射面27は受光素子2の表面に対し
て垂直方向(z方向)に光信号6を集光する役割を果た
す。これは図1(B)に矢印で記載した光信号6の経路
からも明瞭に理解される。The reflecting surface 27 serves to reflect the optical signal 6 introduced from the other side surface 25b of the sealing body 25 and reach the photodiode portion PD of the light receiving element 2. At this time, by making the reflection surface 27 parabolic, more light signals 6 are collected on the surface of the photodiode portion PD. The reflection surface 27 plays a role of condensing the optical signal 6 in a direction perpendicular to the surface of the light receiving element 2 (z direction). This can be clearly understood from the path of the optical signal 6 indicated by an arrow in FIG.
【0017】一方、封止体25の他の側面25bに形成
したレンズ28は、反射面27での反射を考慮した上
で、受光素子2のホトダイオード部分PDの表面か或い
はそれよりもやや深い位置に焦点を持つような略円筒形
の凸曲面(装置の外部から観測して)とほぼ垂直な側壁
を有しており、受光素子2の表面に対して垂直方向(図
示z方向)に延在する中心線30と半径r2を持つ様な
形状で加工されている。この凸曲面は、封止体25を樹
脂封止する際に、封止体25と一体化するように形成す
るのが簡便である。On the other hand, the lens 28 formed on the other side surface 25b of the sealing body 25 is positioned on the surface of the photodiode portion PD of the light receiving element 2 or at a position slightly deeper in consideration of the reflection on the reflection surface 27. Has a side wall substantially perpendicular to a substantially cylindrical convex curved surface (observed from the outside of the device) having a focal point, and extends in a direction perpendicular to the surface of the light receiving element 2 (z direction in the drawing). And has a radius r2. It is convenient to form the convex curved surface so as to be integrated with the sealing body 25 when the sealing body 25 is sealed with a resin.
【0018】そして、レンズ28は、封止体25の他の
側面25bから導入させた光信号6を、受光素子2の表
面に沿って水平方向(図示x方向)に光信号6を集光す
る役割を果たす。即ち、受光素子2の表面と水平な面に
沿って光を集めるのである。これは図1(A)に矢印で
記載した光信号6の経路からも明瞭に理解される。The lens 28 condenses the optical signal 6 introduced from the other side surface 25b of the sealing body 25 in the horizontal direction (x direction in the figure) along the surface of the light receiving element 2. Play a role. That is, light is collected along a plane parallel to the surface of the light receiving element 2. This can be clearly understood from the path of the optical signal 6 indicated by an arrow in FIG.
【0019】これらの反射面27と凸曲面28とによ
り、より多くの光信号5を集光してホトダイオードPD
に入射することができる。この事は、光信号6の受信感
度を増大し、伝搬距離を増大することを意味する。加え
て、垂直方向の集光機能を反射面27に持たせること
で、レンズ28には水平方向の集光機能だけを分担させ
る事が可能となる。従って、レンズ28を円筒形状に加
工することで、同一投影面積に球体レンズを設けた場合
と比較しても光信号6を入射できる表面積を増大できる
利点を有する。The light signal 5 is condensed by the reflecting surface 27 and the convex curved surface 28 so that the photodiode PD
Can be incident. This means that the reception sensitivity of the optical signal 6 is increased and the propagation distance is increased. In addition, by providing the light collecting function in the vertical direction to the reflection surface 27, the lens 28 can share only the light collecting function in the horizontal direction. Therefore, by processing the lens 28 into a cylindrical shape, there is an advantage that the surface area on which the optical signal 6 can be incident can be increased as compared with the case where a spherical lens is provided in the same projection area.
【0020】尚、反射面27は、その境界における材料
の屈折率の違いにより反射面となる。そのために、封止
体25の全体が梨地加工されているのに対して、反射面
27とレンズ28表面はそれより表面荒さが小さい鏡面
加工としている。反射面27に関しては、反射率を向上
するために、その表面を遮光性の金属被膜などで覆って
も良い。The reflecting surface 27 is a reflecting surface due to the difference in the refractive index of the material at the boundary. Therefore, while the entire sealing body 25 is matte-finished, the surfaces of the reflection surface 27 and the lens 28 are mirror-finished with smaller surface roughness. The reflection surface 27 may be covered with a light-shielding metal film or the like in order to improve the reflectance.
【0021】更に、凸状のレンズ28は、上下金型から
の樹脂の剥離性を考慮して、その側壁に1〜5度のテー
パ角度を持たせても良い。このテーパ角度θは、リード
23の位置を中心として上方向にも下方向にも設けるも
ので、図1(A)、図1(B)の記載からも明瞭に理解
される。Furthermore, the convex lens 28 may have a side wall having a taper angle of 1 to 5 degrees in consideration of the releasability of the resin from the upper and lower molds. This taper angle θ is provided both upward and downward about the position of the lead 23, and is clearly understood from the description of FIGS. 1A and 1B.
【0022】上記の受光素子2に対して、発光素子3側
にも同様に反射面40と凸状のレンズ41を配置する。
受光素子2側とはその曲率などの設計を異ならせるため
に各々別個に設けてある。発光素子3から発光された信
号光6を反射面40で反射し、レンズ41を介して封止
体25の側壁25bから外部に出射する機能を有し、且
つ、反射面40で垂直方向の集光を、レンズ41で水平
方向の集光を行ってある程度の方向性を持たせという、
受光素子2側と同様の機能を持っている。反射面40と
レンズ41とで信号光6を集光することにより、信号光
6の伝搬距離を増大できる。In addition to the light receiving element 2, a reflection surface 40 and a convex lens 41 are similarly arranged on the light emitting element 3 side.
The light receiving element 2 is provided separately from the light receiving element 2 in order to make the design such as the curvature different. It has a function of reflecting the signal light 6 emitted from the light emitting element 3 on the reflection surface 40 and emitting the signal light 6 to the outside from the side wall 25 b of the sealing body 25 via the lens 41. It is said that the light is condensed in the horizontal direction by the lens 41 to have a certain degree of directionality.
It has the same function as the light receiving element 2 side. By condensing the signal light 6 with the reflection surface 40 and the lens 41, the propagation distance of the signal light 6 can be increased.
【0023】この様に、光信号6の伝達経路を折り曲げ
ることによって、係る装置をプリント基板上に表面実装
した時に、封止体25の側面25bから光信号6を伝搬
することができ、これによってプリント基板全体の高さ
を低く抑えることができ、電子機器の薄形化を推進する
ことができる。By bending the transmission path of the optical signal 6 as described above, the optical signal 6 can be propagated from the side surface 25b of the sealing body 25 when the device is surface-mounted on a printed circuit board. The height of the entire printed circuit board can be kept low, and thinning of electronic devices can be promoted.
【0024】尚、光半導体装置としては、受光素子2と
発光素子3の両方を封止した構造の他、どちらか一方を
封止した装置であっても良い。The optical semiconductor device may be a device in which both the light receiving element 2 and the light emitting element 3 are sealed, or a device in which either one is sealed.
【0025】図3に、本発明の第2の実施の形態を示し
た。反射面27を得るための構成として溝26を設けた
ものではなく、反射面27を形成した部分を凸状に突起
させたものである。また、反射面27と反射面40とを
分離せずに連続した1つの湾曲面で構成しても良い。先
の実施の形態と同じ箇所に同じ符号を伏して説明を省略
する。FIG. 3 shows a second embodiment of the present invention. Instead of providing the groove 26 as a configuration for obtaining the reflection surface 27, the portion where the reflection surface 27 is formed is made to protrude in a convex shape. Further, the reflection surface 27 and the reflection surface 40 may be constituted by one continuous curved surface without being separated. The same reference numerals are given to the same portions as those in the previous embodiment, and the description is omitted.
【0026】図4に、本発明の第3の実施の形態を示し
た。反射面27とレンズ28の機能を逆にしたもので、
反射面27が水平方向(x方向)の集光を行い、レンズ
28が垂直方向(z方向)の集光を行うように構成した
ものである。先の実施の形態と同じ箇所に同じ符号を伏
して説明を省略する。FIG. 4 shows a third embodiment of the present invention. The functions of the reflection surface 27 and the lens 28 are reversed.
The reflection surface 27 performs light collection in the horizontal direction (x direction), and the lens 28 performs light collection in the vertical direction (z direction). The same reference numerals are given to the same portions as those in the previous embodiment, and the description is omitted.
【0027】[0027]
【発明の効果】以上説明したように、本発明によれば、
反射面27を設けることにより光信号6を反射させて受
光素子2に到達させる構成としたので、樹脂の側面25
bから光信号6の出入斜を行える光半導体装置を実現で
きる利点を有する。この装置は、封止体25の全体の高
さを小さくできるので、プリント基板に実装したときに
大幅な薄形化を実現できるものである。As described above, according to the present invention,
Since the optical signal 6 is reflected and reaches the light receiving element 2 by providing the reflection surface 27, the side surface 25 of the resin is used.
This has an advantage that an optical semiconductor device capable of entering and exiting the optical signal 6 from b can be realized. In this device, the overall height of the sealing body 25 can be reduced, so that when the device is mounted on a printed circuit board, the thickness can be significantly reduced.
【0028】また、反射面27で垂直方向の集光を、レ
ンズ28で水平方向の集光を行うというように、各々の
機能を分離することで、レンズ28の表面積を増大し、
集光できる光信号6の量を増大して装置の感度を増大で
きる利点をも有する。Further, by separating each function such that light is collected in the vertical direction on the reflection surface 27 and light is collected in the horizontal direction by the lens 28, the surface area of the lens 28 is increased.
There is also an advantage that the sensitivity of the device can be increased by increasing the amount of the optical signal 6 that can be collected.
【図1】第1の実施の形態を説明する(A)平面図、
(B)断面図である。FIG. 1A is a plan view illustrating a first embodiment,
(B) It is sectional drawing.
【図2】第1の実施の形態を説明する斜視図である。FIG. 2 is a perspective view illustrating a first embodiment.
【図3】第2の実施の形態を説明する(A)平面図、
(B)断面図である。FIG. 3A is a plan view illustrating a second embodiment,
(B) It is sectional drawing.
【図4】第3の実施の形態を説明する斜視図である。FIG. 4 is a perspective view illustrating a third embodiment.
【図5】従来例を説明する斜視図である。FIG. 5 is a perspective view illustrating a conventional example.
【図6】従来例を説明する斜視図である。FIG. 6 is a perspective view illustrating a conventional example.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石川 勉 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 関口 智 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 国井 秀雄 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 高田 清 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 井野口 浩 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 Fターム(参考) 5F041 AA01 AA06 CB32 DA26 DA55 DA57 EE21 5F088 AA03 BA20 EA09 JA02 JA06 JA11 JA12 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Tsutomu Ishikawa 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Satoshi Sekiguchi 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Hideo Kunii 2-5-Keihanhondori, Moriguchi-shi, Osaka 2-5-5 Sanyo Electric Co., Ltd. (72) Inventor Kiyoshi Takada 2 Keihan-hondori, Moriguchi-shi, Osaka 5-5-5 Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Inoguchi 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in Sanyo Electric Co., Ltd. 5F041 AA01 AA06 CB32 DA26 DA55 DA57 EE21 5F088 AA03 BA20 EA09 JA02 JA06 JA11 JA12
Claims (8)
前記光信号を電気信号に変換する受光素子を封止した光
半導体装置において、 前記受光素子の上部に、前記封止体の側面から入射した
光信号を反射して前記受光ダイオードに到達させる反射
面を形成し、 前記光信号が入射する封止体の側面に凸状のレンズを形
成し、 前記反射面と前記凸状のレンズとを組み合わせること
で、前記受光素子の表面に対して垂直方向の集光と水平
方向の集光とを行うことを特徴とする光半導体装置。1. Inside a sealing body through which an optical signal can be transmitted,
In an optical semiconductor device in which a light receiving element for converting the optical signal into an electric signal is sealed, a reflection surface for reflecting an optical signal incident from a side surface of the sealing body and reaching the light receiving diode on the light receiving element. Forming a convex lens on the side surface of the sealing body on which the optical signal is incident, and combining the reflective surface and the convex lens to form a convex lens in a direction perpendicular to the surface of the light receiving element. An optical semiconductor device which performs light collection and light collection in a horizontal direction.
記レンズが円筒形の凸曲面であることを特徴とする請求
項1記載の光半導体装置。2. The optical semiconductor device according to claim 1, wherein said reflecting surface is a cylindrical concave curved surface, and said lens is a cylindrical convex curved surface.
い、前記凸状のレンズが前記水平方向の集光を行うこと
を特徴とする請求項1記載の光半導体装置。3. The optical semiconductor device according to claim 1, wherein the reflection surface performs the light collection in the vertical direction, and the convex lens performs the light collection in the horizontal direction.
い、前記凸状のレンズが前記垂直方向の集光を行うこと
を特徴とする請求項1記載の光半導体装置。4. The optical semiconductor device according to claim 1, wherein said reflection surface focuses light in said horizontal direction, and said convex lens focuses light in said vertical direction.
成されていることを特徴とする請求項1記載の光半導体
装置。5. The optical semiconductor device according to claim 1, wherein the reflection surface is formed on a resin surface of the sealing body.
た溝の内壁で形成されていることを特徴とする請求項5
記載の光半導体装置。6. The method according to claim 5, wherein the reflection surface is formed by an inner wall of a groove formed on a surface of the sealing body.
The optical semiconductor device according to the above.
した樹脂により形成されていることを特徴とする請求項
1記載の光半導体装置。7. The optical semiconductor device according to claim 1, wherein the convex lens is formed of a resin integrated with the sealing body.
電気信号から光信号を発する発光素子を封止した光半導
体装置において、 前記発光素子の上部に、前記発光素子から発光された光
信号を前記発光素子に対して水平方向に反射させる反射
面を形成し、 前記光信号が出射する封止体の側面に凸状のレンズを形
成し、 前記反射面と前記凸状のレンズとを組み合わせること
で、前記発光素子の表面に対して垂直方向の集光と水平
方向の集光とを行うことを特徴とする光半導体装置。8. Inside a sealed body through which an optical signal can be transmitted,
In an optical semiconductor device in which a light emitting element that emits an optical signal from an electric signal is sealed, a reflection surface is formed above the light emitting element to reflect an optical signal emitted from the light emitting element in a horizontal direction with respect to the light emitting element. Then, a convex lens is formed on a side surface of the sealing body from which the optical signal is emitted, and by combining the reflection surface and the convex lens, light is condensed in a direction perpendicular to the surface of the light emitting element. And an optical semiconductor device for condensing light in a horizontal direction.
Priority Applications (1)
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JP10240698A JP2000068531A (en) | 1998-08-26 | 1998-08-26 | Optical semiconductor device |
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JP10240698A JP2000068531A (en) | 1998-08-26 | 1998-08-26 | Optical semiconductor device |
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JP2000068531A true JP2000068531A (en) | 2000-03-03 |
Family
ID=17063380
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015057866A (en) * | 2009-09-11 | 2015-03-26 | ローム株式会社 | Light emitting device |
US9458982B2 (en) | 2009-09-11 | 2016-10-04 | Rohm Co., Ltd. | Light emitting device |
-
1998
- 1998-08-26 JP JP10240698A patent/JP2000068531A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015057866A (en) * | 2009-09-11 | 2015-03-26 | ローム株式会社 | Light emitting device |
US9458982B2 (en) | 2009-09-11 | 2016-10-04 | Rohm Co., Ltd. | Light emitting device |
US10084117B2 (en) | 2009-09-11 | 2018-09-25 | Rohm Co., Ltd. | Light emitting device |
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