JP2000077318A - Heat treatment apparatus - Google Patents

Heat treatment apparatus

Info

Publication number
JP2000077318A
JP2000077318A JP10255964A JP25596498A JP2000077318A JP 2000077318 A JP2000077318 A JP 2000077318A JP 10255964 A JP10255964 A JP 10255964A JP 25596498 A JP25596498 A JP 25596498A JP 2000077318 A JP2000077318 A JP 2000077318A
Authority
JP
Japan
Prior art keywords
substrate
mounting table
lcd substrate
heat treatment
treatment apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10255964A
Other languages
Japanese (ja)
Inventor
Kiyohisa Tateyama
清久 立山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP10255964A priority Critical patent/JP2000077318A/en
Priority to KR1019990035411A priority patent/KR100680769B1/en
Priority to TW088114543A priority patent/TW525211B/en
Publication of JP2000077318A publication Critical patent/JP2000077318A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for uniformly treating a substrate by heat without generating static electricity. SOLUTION: A heating mounting state 42 is composed of a mounting stage body 51 for providing heat to an LCD substrate (G) and a surface member 52 for mounting the LCD substrate (G). The surface member 52 made of granite or glass is thinner than the mount stage body 51. The surface of the surface member 52 is roughened, and the LCD substrate (G) is mounted thereon. Then, a contact area between the LCD substrate (G) and the surface member 52 is made small, to prevent static electricity that is caused by abrasion between the LCD substrate (G) and the surface member 52. In this case, the roughened surface of the surface member 52 has a roughness of 3 to 100S, so that the deflection in the LCD substrate (G) can be prevented and uniform heat treatment can be realized.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,LCD基板等の基
板を載置台で熱処理する熱処理装置に関する。
The present invention relates to a heat treatment apparatus for heat treating a substrate such as an LCD substrate on a mounting table.

【0002】[0002]

【従来の技術】一般に,液晶表示装置(LCD)の製造
工程においては,LCD基板の表面に,例えばITO
(Indium Tin Oxide)の薄膜や電極パ
ターンを形成するために,半導体製造工程の場合と同様
にフォトリソグラフィ技術が用いられている。このフォ
トリソグラフィ技術には,LCD基板の表面にレジスト
液を塗布するレジスト塗布工程や,形成されたレジスト
膜に回路パターンを露光する露光処理工程等の各種処理
工程が含まれており,レジスト塗布工程と露光処理工程
との間には,レジスト膜中の残留溶剤を蒸発させてLC
D基板とレジスト膜との密着性を向上させるための加熱
処理工程が行われている。
2. Description of the Related Art Generally, in a manufacturing process of a liquid crystal display device (LCD), for example, an ITO
In order to form a thin film (Indium Tin Oxide) and an electrode pattern, a photolithography technique is used as in the case of the semiconductor manufacturing process. This photolithography technology includes various processing steps such as a resist coating step of applying a resist solution on the surface of an LCD substrate and an exposure processing step of exposing a circuit pattern to a formed resist film. The solvent remaining in the resist film is evaporated between the
A heat treatment step is performed to improve the adhesion between the D substrate and the resist film.

【0003】この加熱処理工程で使用される加熱処理装
置には図11に示すように,LCD基板Gを載置する載
置台100と,この載置台100の表面から突出自在な
昇降ピン101とが具備されている。かかる構成によ
り,この加熱処理装置に搬入されたLCD基板Gは,昇
降ピン101に支持された後,この昇降ピン101と共
に下降して載置台100上に載置される。そして,LC
D基板Gの全面と載置台100とが接触した状態で加熱
処理される。このため,LCD基板Gには載置台100
からの熱が均一に行き渡り,LCD基板Gに対する均一
な加熱処理が可能となる。
As shown in FIG. 11, a heat treatment apparatus used in this heat treatment step includes a mounting table 100 on which an LCD substrate G is mounted, and elevating pins 101 which can protrude from the surface of the mounting table 100. Provided. With this configuration, the LCD substrate G carried into the heat treatment device is supported by the elevating pins 101, and then descends together with the elevating pins 101 to be mounted on the mounting table 100. And LC
Heat treatment is performed in a state where the entire surface of the D substrate G and the mounting table 100 are in contact with each other. For this reason, the mounting table 100 is mounted on the LCD substrate G.
And the heat from the LCD substrate G is evenly distributed, so that the LCD substrate G can be uniformly heated.

【0004】しかしながら,載置台100に載置された
LCD基板Gを昇降ピン101で上昇させる際,即ちL
CD基板Gを載置台100から剥離する際に生じる剥離
帯電により,LCD基板Gが帯電する心配がある。ま
た,LCD基板Gを載置台100に載置させる場合や,
加熱処理でLCD基板Gが熱膨張する場合等に,LCD
基板Gと載置台100との間に生じる摩擦により静電気
が発生し,LCD基板Gが帯電するおそれがあった。
However, when the LCD substrate G mounted on the mounting table 100 is lifted by the lifting pins 101,
There is a concern that the LCD substrate G will be charged due to the separation charging that occurs when the CD substrate G is separated from the mounting table 100. When the LCD substrate G is mounted on the mounting table 100,
When the LCD substrate G is thermally expanded by the heat treatment,
The friction generated between the substrate G and the mounting table 100 generates static electricity, and the LCD substrate G may be charged.

【0005】そこで従来では図12に示すように,載置
台100の表面にプロキシミティピン102を設け,L
CD基板Gをプロキシミティピン102に支持させた状
態で加熱処理する加熱処理装置103を使用する場合が
多かった。この加熱処理装置103によれば,LCD基
板Gとプロキシミティピン102との接触面積が小さく
なるために,上記静電気の発生を防止することが可能と
なる。
Therefore, conventionally, a proximity pin 102 is provided on the surface of the mounting table 100 as shown in FIG.
In many cases, a heat treatment apparatus 103 for performing heat treatment with the CD substrate G supported on the proximity pins 102 is used. According to the heat treatment apparatus 103, since the contact area between the LCD substrate G and the proximity pins 102 is reduced, it is possible to prevent the generation of the static electricity.

【0006】[0006]

【発明が解決しようとする課題】しかしながら,プロキ
シミティピン102を用いた加熱処理装置103では載
置台100とLCD基板Gとの間に隙間が形成されるた
めに,LCD基板Gが自重でたわんでしまうおそれが生
じる。そしてこの場合には,LCD基板Gと載置台10
0との間隔が等間隔に維持されなくなるために,このL
CD基板Gに対して載置台100からの輻射熱が均一に
行き渡らなくなる。その結果,均一な加熱処理ができな
くなるおそれが生じる。
However, in the heat treatment apparatus 103 using the proximity pins 102, since a gap is formed between the mounting table 100 and the LCD substrate G, the LCD substrate G is bent by its own weight. May occur. In this case, the LCD substrate G and the mounting table 10
Since the interval from 0 is not maintained at an equal interval, this L
The radiant heat from the mounting table 100 does not uniformly spread to the CD substrate G. As a result, a uniform heat treatment may not be performed.

【0007】本発明はかかる点に鑑みてなされたもので
あり,基板に静電気が帯電せず,かつ基板に対する均一
な熱処理が可能な新しい熱処理装置を提供することを目
的としている。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a new heat treatment apparatus capable of performing uniform heat treatment on a substrate without charging the substrate with static electricity.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
に,請求項1に記載の熱処理装置は,載置台に載置させ
た基板を,該載置台の表面から伝搬される熱で熱処理す
る熱処理装置において,前記載置台の表面を粗面に形成
したことを特徴としている。この場合の粗面は,請求項
2にように,3Sから100Sの粗さで形成するとよ
い。
According to a first aspect of the present invention, there is provided a heat treatment apparatus for heat treating a substrate mounted on a mounting table with heat transmitted from a surface of the mounting table. In the heat treatment apparatus, the surface of the mounting table is roughened. In this case, the rough surface may be formed with a roughness of 3S to 100S.

【0009】請求項1,2に記載の熱処理装置にあって
は,粗面に基板を載置するために,基板と載置台との接
触面積が従来よりも小さくなる。従って,基板と載置台
との摩擦による静電気の発生を防止することができる。
さらに,粗面に載置された基板はたわまないために,基
板と載置台との間隔が等間隔に維持される。その結果,
基板に対する均一な加熱処理が可能となる。
In the heat treatment apparatus according to the first and second aspects, since the substrate is mounted on the rough surface, the contact area between the substrate and the mounting table becomes smaller than before. Therefore, generation of static electricity due to friction between the substrate and the mounting table can be prevented.
Further, since the substrate placed on the rough surface does not bend, the intervals between the substrate and the mounting table are maintained at equal intervals. as a result,
The substrate can be uniformly heated.

【0010】請求項3に記載の発明は,請求項1または
2に記載の熱処理装置において,前記粗面は,サンドブ
ラスト工法で形成されたことを特徴としている。
According to a third aspect of the present invention, in the heat treatment apparatus of the first or second aspect, the rough surface is formed by a sand blast method.

【0011】かかる構成によれば,適度に高さのばらつ
いた粗面を簡単かつ安価に形成することができる。
According to this configuration, a rough surface having an appropriate height can be easily and inexpensively formed.

【0012】請求項4に記載の発明は,請求項1,2ま
たは3に記載の熱処理装置において,前記載置台は,基
板に対して熱を供給可能な載置台本体と,該載置台本体
の表面に配置された表面部材と,からなることを特徴と
している。
According to a fourth aspect of the present invention, in the heat treatment apparatus of the first, second, or third aspect, the mounting table includes a mounting table main body capable of supplying heat to the substrate, and the mounting table main body. And a surface member arranged on the surface.

【0013】かかる構成によれば,基板を載置する表面
部材を適宜な材質で形成することができる。従って,表
面部材に粗面を形成することがより容易になる。また,
載置台を載置台本体と表面部材とで構成するために,表
面部材を容易に交換することができる。
According to this configuration, the surface member on which the substrate is placed can be formed of an appropriate material. Therefore, it becomes easier to form a rough surface on the surface member. Also,
Since the mounting table is composed of the mounting table main body and the surface member, the surface member can be easily replaced.

【0014】前記表面部材は,請求項5のようにグラナ
イト,大理石等の鉱物で形成してもよく,また請求項6
のようにガラスで形成してもよい。
The surface member may be formed of a mineral such as granite or marble.
It may be formed of glass as shown in FIG.

【0015】特にグラナイト,ガラスは,酸化ケイ素を
主成分とするために,基板がガラス基板の場合には,基
板と表面部材との摩擦による静電気の発生をより確実に
防止することが可能になる。
In particular, since granite and glass mainly contain silicon oxide, when the substrate is a glass substrate, it is possible to more reliably prevent the generation of static electricity due to friction between the substrate and the surface member. .

【0016】請求項7に記載の熱処理装置は,載置台に
載置させた基板を,該載置台の表面から伝搬される熱で
熱処理する熱処理装置において,前記載置台は,基板に
対して熱を供給可能な載置台本体と,該載置台本体の表
面に配置された網と,からなることを特徴としている。
According to a seventh aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate mounted on a mounting table with heat transmitted from a surface of the mounting table. And a net arranged on the surface of the mounting table main body.

【0017】請求項7に記載の熱処理装置にあっては,
網に形成された隙間のために,基板と網との接触面積が
小さくなる。従って,基板と網との摩擦が減少し,かか
る摩擦で発生する静電気をより確実に防止することが可
能となる。また,網によって均一かつ規則的に凹凸を形
成でき,基板に対して均一な熱伝導を行うことができ
る。
In the heat treatment apparatus according to claim 7,
The contact area between the substrate and the net is reduced due to the gap formed in the net. Therefore, the friction between the substrate and the net is reduced, and the static electricity generated by such friction can be more reliably prevented. In addition, unevenness can be formed uniformly and regularly by the net, and uniform heat conduction to the substrate can be performed.

【0018】そして請求項8に記載した発明は,載置台
に載置させた基板を,該載置台の表面から伝搬される熱
で熱処理する熱処理装置において,前記載置台は,基板
に対して熱を供給可能な載置台本体と,該載置台本体の
表面に配置された綿状部材もしくは布状部材からなるこ
とを特徴としている。
The present invention according to claim 8 is a heat treatment apparatus for heat-treating a substrate mounted on a mounting table with heat propagated from the surface of the mounting table. And a cotton-like member or a cloth-like member arranged on the surface of the mounting table main body.

【0019】かかる構成によれば,綿状部材や布状部材
が分散化した状態で基板と接触するために,基板に対す
る接触面積が小さくなる。従って,摩擦が減少するため
に,請求項7の場合と同様に,静電気の発生を防止する
ことが可能となる。また,綿状部材或いは布状部材を載
置台の表面に固定しない場合には,これらの綿状部材あ
るいは布状部材が基板と同様に,熱膨張,熱収縮する。
従って,基板と綿状部材あるいは布状部材の間で発生す
る摩擦を一層抑制することができ,静電気の発生を防止
することがより確実となる。さらに,綿状部材あるいは
布状部材が磨耗等によって好適に機能しなくなった際に
は,これらを簡単に交換することも可能である。
According to this configuration, since the cotton-like member and the cloth-like member are in contact with the substrate in a dispersed state, the contact area with the substrate is reduced. Therefore, since the friction is reduced, it is possible to prevent the generation of static electricity as in the case of the seventh aspect. Further, when the cotton-like member or the cloth-like member is not fixed to the surface of the mounting table, the cotton-like member or the cloth-like member thermally expands and contracts similarly to the substrate.
Therefore, the friction generated between the substrate and the cotton-like member or the cloth-like member can be further suppressed, and the generation of static electricity can be more reliably prevented. Further, when the cotton-like member or the cloth-like member does not function properly due to abrasion or the like, it is possible to easily replace them.

【0020】[0020]

【発明の実施の形態】以下,添付図面を参照しながら本
発明の好適な実施の形態を説明する。この実施の形態
は,塗布現像処理装置内に組み込まれた加熱処理装置と
して具体化されている。なお,図1は塗布現像処理装置
の斜視図を,図2は塗布現像処理装置の平面図をそれぞ
れ示している。
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. This embodiment is embodied as a heat treatment device incorporated in a coating and developing treatment device. 1 is a perspective view of the coating and developing apparatus, and FIG. 2 is a plan view of the coating and developing apparatus.

【0021】塗布現像処理装置1は図1,2に示すよう
に,例えば矩形状のLCD基板Gを搬入出するローダ部
2と,LCD基板Gを処理する第1の処理部3と,この
第1の処理部3とインターフェイス部4とを介して連設
された第2の処理部5と,この第2の処理部5と例えば
露光装置(図示せず)との間でLCD基板Gを授受する
ためのインターフェイス部7とから構成されている。
As shown in FIGS. 1 and 2, the coating and developing apparatus 1 includes a loader unit 2 for loading and unloading a rectangular LCD substrate G, a first processing unit 3 for processing the LCD substrate G, and a first processing unit 3 for processing the LCD substrate G. A second processing unit 5 connected via a first processing unit 3 and an interface unit 4, and an LCD substrate G is exchanged between the second processing unit 5 and, for example, an exposure apparatus (not shown). And an interface unit 7 for performing the operation.

【0022】ローダ部2にはカセット載置台10が設け
られており,このカセット載置台10には,例えば未処
理のLCD基板Gを収納するカセット11,11と,処
理済みのLCD基板Gが収納されるカセット12,12
とがLCD基板Gの出入口を第1の処理部3側に向けて
一列に載置自在である。またローダ部2には,LCD基
板を搬送自在な副搬送装置13が備えられている。
A cassette mounting table 10 is provided in the loader section 2. The cassette mounting table 10 stores, for example, cassettes 11 for storing unprocessed LCD substrates G and a processed LCD substrate G. Cassettes 12, 12
Can be mounted in a line with the entrance of the LCD substrate G facing the first processing unit 3 side. The loader unit 2 is provided with a sub-transport device 13 that can transport the LCD substrate.

【0023】副搬送装置13は搬送レール13aに沿っ
た方向(Y方向)と,各カセット11,12内のLCD
基板Gの収納方向(Z方向)に移動自在であり,かつθ
方向にも回転自在となるように構成されている。そし
て,副搬送装置13はLCD基板Gを載置自在な受け渡
し台14に対してもアクセス可能となるように構成され
ている。
The sub-transport device 13 is provided with a direction (Y direction) along the transport rail 13a and an LCD in each of the cassettes 11 and 12.
It is movable in the storage direction (Z direction) of the substrate G, and θ
It is configured to be rotatable in any direction. The sub-transport device 13 is configured to be able to access the transfer table 14 on which the LCD substrate G can be placed.

【0024】第1の処理部3には,LCD基板Gに対し
て所定の処理を施す各種の処理装置が主搬送装置15の
搬送レール16を挟んだ両側に配置されている。即ち,
搬送レール16の一側には,各カセット11,11から
取り出されたLCD基板Gを洗浄するスクラバ洗浄装置
17と,LCD基板Gに対して現像処理を施す現像処理
装置18とが並んで配置され,搬送レール16の他側に
は紫外線オゾン洗浄装置19と,LCD基板Gを冷却処
理する冷却処理装置20,21と,LCD基板Gを加熱
処理する加熱処理装置22とが適宜多段に配置されてい
る。これら各種の処理装置に対するLCD基板Gの搬入
出は,主搬送装置15に装備された搬送アーム15aに
より行われる。なお,かかる第1の処理部3と後述する
第2の処理部5との間に形成された前記インターフェイ
ス部4には,LCD基板Gを載置自在な受け渡し台23
が備えられている。
In the first processing section 3, various processing apparatuses for performing predetermined processing on the LCD substrate G are arranged on both sides of the transport rail 16 of the main transport apparatus 15. That is,
On one side of the transport rail 16, a scrubber cleaning device 17 for cleaning the LCD substrate G taken out of each of the cassettes 11, 11 and a developing device 18 for performing a developing process on the LCD substrate G are arranged side by side. On the other side of the transport rail 16, an ultraviolet / ozone cleaning device 19, cooling devices 20 and 21 for cooling the LCD substrate G, and a heat processing device 22 for heating the LCD substrate G are appropriately arranged in multiple stages. I have. The loading and unloading of the LCD substrate G to and from these various processing apparatuses is performed by a transfer arm 15a provided in the main transfer device 15. The interface unit 4 formed between the first processing unit 3 and a second processing unit 5 described later has a transfer table 23 on which the LCD substrate G can be placed.
Is provided.

【0025】第2の処理部5には,主搬送装置25の搬
送レール26を挟んだ一側に,塗布・周縁部除去装置2
7が配置され,この搬送レール26を挟んだ他側には,
LCD基板Gに疎水化処理を施す疎水化処理装置28
と,LCD基板Gを冷却する冷却処理装置29と,本実
施の形態にかかる加熱処理装置30,30とが多段に配
置されている。なお,上記主搬送装置25には第2の処
理部5に属する各種処理装置にLCD基板Gを搬入出す
る搬送アーム25aが装備されている。
The second processing section 5 includes, on one side of the main transfer device 25 with the transfer rail 26 interposed therebetween, the coating / peripheral portion removal device 2.
7 is disposed, and on the other side of the transfer rail 26,
Hydrophobizing device 28 for performing hydrophobizing treatment on LCD substrate G
And a cooling processing device 29 for cooling the LCD substrate G, and heating processing devices 30, 30 according to the present embodiment are arranged in multiple stages. The main transfer device 25 is provided with a transfer arm 25a for transferring the LCD substrate G into and out of various processing devices belonging to the second processing unit 5.

【0026】インターフェイス部7には塗布現像処理装
置1と露光装置(図示せず)とのタクトを調整するため
に,LCD基板Gを一時的に収納して待機させるカセッ
ト31,31と,LCD基板Gを載置自在な受け渡し台
32と,各カセット31,31,受け渡し台32,露光
装置(図示せず)に対してLCD基板Gを搬送自在な副
搬送装置33とが装備されている。
In order to adjust the tact time between the coating and developing apparatus 1 and an exposure apparatus (not shown), the interface section 7 has cassettes 31 for temporarily storing and waiting the LCD substrate G, and an LCD substrate. A transfer table 32 on which G can be placed, and a sub-transfer device 33 that can transfer the LCD substrate G to each of the cassettes 31, 31, the transfer table 32, and an exposure device (not shown) are provided.

【0027】塗布現像処理装置1は以上のように構成さ
れている。次に,塗布現像処理装置1に組み込まれた加
熱処理装置30について説明する。
The coating and developing apparatus 1 is configured as described above. Next, the heat treatment device 30 incorporated in the coating and developing treatment device 1 will be described.

【0028】加熱処理装置30は図3に示すように,L
CD基板Gを加熱処理する処理室40が形成されてお
り,この処理室40には後述する加熱載置台42と,こ
の加熱載置台42を包囲するシャッタ43とが備えられ
ている。
As shown in FIG. 3, the heat treatment device 30
A processing chamber 40 for heating the CD substrate G is formed, and the processing chamber 40 is provided with a heating stage 42 described later and a shutter 43 surrounding the heating stage 42.

【0029】シャッタ43は昇降シリンダ44により上
下動自在に構成されており,シャッタ43が上昇した際
には,シャッタ43と上部中央に排気口45を有するカ
バー46から垂下したストッパ47とが接触して上記処
理室40が形成されるようになっている。ストッパ47
には給気口(図示せず)が設けられており,この給気口
(図示せず)から処理室40内に流入した空気は排気口
45から排気されるように構成されている。また,処理
室40内にはLCD基板Gを支持可能な昇降ピン48が
備えられており,この昇降ピン48はモータ49の駆動
で上下動自在となるように形成されている。
The shutter 43 is vertically movable by an elevating cylinder 44. When the shutter 43 is raised, the shutter 43 comes into contact with a stopper 47 which is suspended from a cover 46 having an exhaust port 45 at the upper center. Thus, the processing chamber 40 is formed. Stopper 47
Is provided with an air supply port (not shown), and the air flowing into the processing chamber 40 from the air supply port (not shown) is exhausted from the exhaust port 45. Further, in the processing chamber 40, an elevating pin 48 capable of supporting the LCD substrate G is provided, and the elevating pin 48 is formed so as to be vertically movable by driving a motor 49.

【0030】そして,上述した加熱載置台42は図4に
示すように,発熱体50を内蔵したアルミニューム等の
材質からなる矩形状の載置台本体51と,この載置台本
体51の上部に配置された表面部材52とで構成されて
いる。表面部材52は,例えばグラナイト,大理石等の
鉱物やガラス等の材料で構成されており,載置台本体5
1からの熱がLCD基板Gに対してよく伝わるように載
置台本体51よりも薄く形成されている。また,表面部
材52は載置台本体51に対して取り付け自在となるよ
うに形成されている。
As shown in FIG. 4, the heating mounting table 42 has a rectangular mounting table main body 51 made of a material such as aluminum and has a heating element 50 therein, and is disposed above the mounting table main body 51. And the surface member 52 formed. The surface member 52 is made of, for example, a material such as a mineral such as granite or marble or glass.
It is formed thinner than the mounting table main body 51 so that heat from 1 is transmitted to the LCD substrate G well. The surface member 52 is formed so as to be attachable to the mounting table main body 51.

【0031】さらに表面部材52の表面は,例えばサン
ドブラスト工程により粗度が3S〜100Sの粗面とな
るように形成されている。LCD基板Gが表面部材52
に載置される際には,LCD基板Gの裏面が表面部材5
2の全体にわたって,この粗面と接触する。
Further, the surface of the surface member 52 is formed by, for example, a sandblasting process so as to have a roughness of 3S to 100S. LCD substrate G is a surface member 52
When the LCD substrate G is placed on the surface member 5,
2 is in contact with this rough surface.

【0032】本発明の実施の形態にかかる加熱処理装置
30は以上のように構成されている。次に,加熱処理装
置30の作用,効果について説明する。
The heat treatment apparatus 30 according to the embodiment of the present invention is configured as described above. Next, the operation and effect of the heat treatment device 30 will be described.

【0033】カセット載置台10上に未処理のLCD基
板Gを収納したカセット11が載置されると,副搬送装
置13がカセット11にアクセスしてLCD基板Gを1
枚抜き取る。次いで,副搬送装置13はローダ部2に装
備された受け渡し台14までこのLCD基板Gを搬送
し,このLCD基板Gを受け渡し台14上に受け渡す。
When the cassette 11 accommodating the unprocessed LCD substrate G is mounted on the cassette mounting table 10, the sub-transport device 13 accesses the cassette 11 and removes the LCD substrate G by one.
Remove the sheets. Next, the sub-transport device 13 transports the LCD substrate G to the transfer table 14 provided in the loader unit 2 and transfers the LCD substrate G to the transfer table 14.

【0034】次いで,このLCD基板Gは主搬送装置1
5の搬送アーム15aに保持された状態で紫外線オゾン
洗浄装置19に搬送され,LCD基板Gに付着した有機
汚染物が除去される。その後,オゾン洗浄が終了したL
CD基板Gは主搬送装置15でスクラバ洗浄装置17に
搬送されてスクラブ洗浄処理が施された後,再び搬送ア
ーム15aに保持された状態で受け渡し台23に搬送さ
れる。
Next, the LCD substrate G is mounted on the main transfer device 1
The organic contaminants adhered to the LCD substrate G are transported to the ultraviolet / ozone cleaning device 19 while being held by the transport arm 15a. After that, the ozone cleaning is completed.
The CD substrate G is transferred to the scrubber cleaning device 17 by the main transfer device 15 and subjected to scrub cleaning processing, and then transferred to the transfer table 23 while being held by the transfer arm 15a again.

【0035】受け渡し台23に受け渡されたLCD基板
Gは,主搬送装置25の搬送アーム25aに保持された
状態で疎水化処理装置28に搬送される。そして,疎水
化処理が終了したLCD基板Gは,再び搬送アーム25
aに保持された状態で塗布・周縁部除去装置27に搬送
される。この塗布・周縁部除去装置27でレジスト液が
塗布され,周縁部の不要なレジスト膜が除去されたLC
D基板Gは,搬送アーム25aで加熱処理装置30に搬
送される。
The LCD substrate G transferred to the transfer table 23 is transferred to the hydrophobizing device 28 while being held by the transfer arm 25a of the main transfer device 25. Then, the LCD substrate G that has been subjected to the hydrophobizing process is again transferred to the transfer arm 25
While being held at a, it is transported to the coating / peripheral part removing device 27. The resist liquid is applied by the coating / periphery removing device 27, and the unnecessary resist film on the peripheral portion is removed.
The D substrate G is transferred to the heat treatment device 30 by the transfer arm 25a.

【0036】この際,LCD基板Gは図5に示すよう
に,下降したシャッタ43の上方から搬送アーム25a
と共に処理室40内に進入し,1点鎖線で示す上昇した
昇降ピン48上に支持される。そして,搬送アーム25
aを処理室40から退出させた後にシャッタ43を上昇
させて処理室40内を気密にする。その後,LCD基板
Gを昇降ピン48と共に図6の1点鎖線で示した位置か
ら実線の位置まで下降させて,このLCD基板Gを加熱
載置台42の表面部材52上に載置させた後に加熱処理
を施す。
At this time, as shown in FIG. 5, the LCD board G is moved from above the lowered shutter 43 to the transfer arm 25a.
At the same time, it enters the processing chamber 40 and is supported on the ascending and descending pins 48 indicated by the dashed line. And the transfer arm 25
After retracting a from the processing chamber 40, the shutter 43 is raised to make the processing chamber 40 airtight. Thereafter, the LCD substrate G is lowered from the position shown by the dashed line in FIG. 6 to the position shown by the solid line in FIG. Perform processing.

【0037】かかる加熱処理が終了した後は,昇降ピン
48が上昇してシャッタ43が下降する。次いで,搬送
アーム25aが処理室40内に進入して昇降ピン48か
らLCD基板Gを受け取った後,LCD基板Gを保持し
た状態で処理室40内から退出する。加熱処理装置30
から搬出されたLCD基板Gは,その後受け渡し台32
上に受け渡され,今度は副搬送装置33により露光装置
(図示せず)に搬送される。
After the completion of the heating process, the lift pins 48 are raised and the shutter 43 is lowered. Next, the transfer arm 25a enters the processing chamber 40 and receives the LCD substrate G from the elevating pins 48, and then exits from the processing chamber 40 while holding the LCD substrate G. Heat treatment device 30
The LCD substrate G carried out from the
It is transferred to the upper side, and is then transferred to the exposure device (not shown) by the sub-transport device 33.

【0038】本発明の実施の形態にかかる加熱処理装置
30では,LCD基板Gを載置させる表面部材52の表
面が粗面となるように形成されている。従って図7に示
すように,LCD基板Gと表面部材52との接触面積が
従来よりも小さくなる。その結果,LCD基板Gが昇降
ピン48によって表面部材52から剥離される時等で
も,LCD基板Gと表面部材52との摩擦が減少し,こ
の摩擦による静電気の発生を防止することが可能とな
る。
In the heat treatment apparatus 30 according to the embodiment of the present invention, the surface of the surface member 52 on which the LCD substrate G is mounted is formed so as to be rough. Therefore, as shown in FIG. 7, the contact area between the LCD substrate G and the surface member 52 is smaller than in the conventional case. As a result, even when the LCD substrate G is peeled off from the surface member 52 by the lifting pins 48, the friction between the LCD substrate G and the surface member 52 is reduced, and the generation of static electricity due to this friction can be prevented. .

【0039】また,上記粗面は3S〜100Sの粗さに
形成されており,かつLCD基板Gが表面部材52に載
置される際には,LCD基板Gの裏面が全面にわたって
粗面と接触した状態となっている。従って,粗面に載置
されたLCD基板Gは自重でたわむことがなく,このL
CD基板Gと表面部材52との間隔は,LCD基板Gの
全面にわたって等間隔に維持される。その結果,このL
CD基板Gには載置台本体51からの熱が均一に供給さ
れて,均一な加熱処理が可能となる。
The rough surface is formed to have a roughness of 3S to 100S, and when the LCD substrate G is mounted on the front surface member 52, the back surface of the LCD substrate G contacts the rough surface over the entire surface. It is in a state where it has been done. Therefore, the LCD substrate G placed on the rough surface does not bend under its own weight.
The distance between the CD substrate G and the surface member 52 is maintained at an equal distance over the entire surface of the LCD substrate G. As a result, this L
The heat from the mounting table main body 51 is uniformly supplied to the CD substrate G, so that a uniform heat treatment can be performed.

【0040】また,表面部材52は載置台本体51に対
して取り付け自在であるために,表面部材52の交換が
容易である。そして,加熱載置台42を構成するアルミ
ニューム等よりも表面処理しやすいグラナイトやガラス
等の材料で表面部材52を構成することにより,表面部
材52の粗面をより容易に形成することが可能になる。
Since the surface member 52 can be freely attached to the mounting table main body 51, the replacement of the surface member 52 is easy. The rough surface of the surface member 52 can be more easily formed by forming the surface member 52 with a material such as granite or glass that is more easily surface-treated than aluminum or the like that forms the heating mounting table 42. Become.

【0041】そして,上記グラナイトやガラスはLCD
基板Gの主成分と同じ酸化ケイ素で構成されているため
に,表面部材52とLCD基板Gとの摩擦で発生する静
電気をより確実に防止することが可能である。
The above granite or glass is used for LCD.
Since it is composed of the same silicon oxide as the main component of the substrate G, it is possible to more reliably prevent static electricity generated by friction between the surface member 52 and the LCD substrate G.

【0042】なお,上記実施の形態では,加熱載置台4
2を載置台本体51と表面部材52とで構成すると共に
表面部材52の表面に粗面を形成した例を挙げて説明し
たが,本発明は載置台本体51と表面部材52とが一体
化した加熱載置台,即ち従来の加熱載置台の表面に粗面
を形成し,かつこの粗面が3S〜100Sの粗さとなる
ように形成してもよい。また,表面部材52はグラナイ
トまたはガラス以外にも,例えば金属等で形成してもよ
い。
In the above embodiment, the heating table 4
2 has been described with an example in which the mounting table main body 51 and the surface member 52 are formed and a rough surface is formed on the surface of the surface member 52, but in the present invention, the mounting table main body 51 and the surface member 52 are integrated. A rough surface may be formed on the surface of the heating stage, that is, a conventional heating stage, and the rough surface may be formed to have a roughness of 3S to 100S. Further, the surface member 52 may be formed of, for example, a metal or the like in addition to the granite or the glass.

【0043】さらに本発明では,上記表面部材52に代
えて網55を備えた加熱載置台56を提案することも可
能である。この加熱載置台56は図8に示すように,載
置台本体51の上面が網55で覆われており,LCD基
板Gは網55に載置された状態で加熱処理されるように
構成されている。
Further, in the present invention, it is possible to propose a heating table 56 provided with a net 55 instead of the surface member 52. As shown in FIG. 8, the upper surface of the mounting table body 51 of the heating mounting table 56 is covered with a net 55, and the LCD substrate G is configured to be heated while being mounted on the net 55. I have.

【0044】かかる構成によれば,網55の隙間のため
にLCD基板Gと網55との接触面積が小さくなる。従
って,LCD基板Gと網55との摩擦が減少するため
に,静電気の発生をより確実に防止することができる。
そしてこの場合も,網55に載置されたLCD基板Gは
たわまないために,LCD基板Gと網55との間隔は等
間隔に維持される。従って,LCD基板Gに対する均一
な加熱処理が可能である。
According to this configuration, the contact area between the LCD substrate G and the screen 55 is reduced due to the gap of the screen 55. Therefore, since the friction between the LCD substrate G and the screen 55 is reduced, the generation of static electricity can be more reliably prevented.
Also in this case, since the LCD substrate G placed on the net 55 does not bend, the interval between the LCD substrate G and the net 55 is maintained at an equal interval. Therefore, a uniform heat treatment can be performed on the LCD substrate G.

【0045】そして,LCD基板Gと網55との接触面
積は網55に形成された隙間のために小さくなるので,
サンドブラスト工程等の特別な表面処理が不要となる。
なお,網55は載置台本体51の上面を必ずしも覆う必
要はなく,少なくともLCD基板G全面と網55との接
触部分に網55が配置されていればよい。
Since the contact area between the LCD substrate G and the screen 55 becomes small due to the gap formed in the screen 55,
No special surface treatment such as a sandblasting step is required.
Note that the net 55 does not necessarily need to cover the upper surface of the mounting table main body 51, and it is sufficient that the net 55 is arranged at least at the contact portion between the entire LCD substrate G and the net 55.

【0046】また表面部材52や網55に代えて,図9
に示すように例えばステンレス製の緻密な金属綿57で
LCD基板Gを支持するようにしてもよい。かかる構成
によれば,金属綿57とLCD基板Gとの接触部分が分
散化するために,LCD基板Gと金属綿57との接触面
積が小さくなる。従って,静電気の発生をより確実に防
止することが可能となる。また図10に示すように,金
属綿57の代わりに綿状部材60や布状部材61でLC
D基板Gを支持するようにしてもよい。この場合,綿状
部材60や布状部材61を載置台本体51に固定しなけ
れば,綿状部材60や布状部材61がLCD基板Gと同
様に熱膨張,熱収縮する。従って,LCD基板Gと綿状
部材60との間あるいはLCD基板Gと布状部材61と
の間で発生する摩擦を一層抑制することができ,より確
実に静電気の発生を防止することが可能となる。また,
磨耗等で好適に機能しなくなった綿状部材60や布状部
材61を交換することも容易である。
In place of the surface member 52 and the net 55, FIG.
The LCD substrate G may be supported by a dense metal cotton 57 made of stainless steel, for example, as shown in FIG. According to such a configuration, since the contact portion between the metal cotton 57 and the LCD substrate G is dispersed, the contact area between the LCD substrate G and the metal cotton 57 is reduced. Therefore, generation of static electricity can be more reliably prevented. Also, as shown in FIG.
The D substrate G may be supported. In this case, unless the cotton-like member 60 or the cloth-like member 61 is fixed to the mounting table main body 51, the cotton-like member 60 or the cloth-like member 61 thermally expands and contracts similarly to the LCD substrate G. Therefore, the friction generated between the LCD substrate G and the cotton-like member 60 or between the LCD substrate G and the cloth-like member 61 can be further suppressed, and the generation of static electricity can be more reliably prevented. Become. Also,
It is also easy to replace the cotton-like member 60 or the cloth-like member 61 that has stopped functioning properly due to wear or the like.

【0047】なお上記実施の形態では,サンドブラスト
工程による表面処理を例に挙げて説明したが,表面部材
52または加熱載置台42の表面を3Sから100Sの
粗度に形成できるのであれば,本発明はこのような例に
は限定されない。
In the above embodiment, the surface treatment by the sandblasting process has been described as an example. However, if the surface of the surface member 52 or the heating table 42 can be formed to have a roughness of 3S to 100S, the present invention is not limited thereto. Is not limited to such an example.

【0048】また,上記実施の形態ではレジスト塗布後
のLCD基板Gを加熱処理する加熱処理装置30を例に
挙げて説明したが,本発明はかかる例には限定されず,
現像処理後の加熱処理装置22はもちろん,例えば冷却
処理装置29に対しても適用が可能である。そして,本
発明に使用可能な基板は上記実施の形態のようにLCD
基板Gには限定されず,例えばCD基板や半導体ウェハ
等にも応用が可能である。
In the above embodiment, the heat treatment apparatus 30 for heating the LCD substrate G after applying the resist has been described as an example. However, the present invention is not limited to such an example.
The present invention can be applied not only to the heat treatment device 22 after the development process but also to, for example, the cooling treatment device 29. The substrate that can be used in the present invention is an LCD as in the above embodiment.
The present invention is not limited to the substrate G, and can be applied to, for example, a CD substrate and a semiconductor wafer.

【0049】[0049]

【発明の効果】請求項1〜8に記載の発明では,基板の
接触面積が従来よりも小さくなるために,静電気の発生
を防止することができる。また,基板がたわまないため
に,均一な熱処理が可能である。
According to the first to eighth aspects of the present invention, since the contact area of the substrate is smaller than in the conventional case, the generation of static electricity can be prevented. Further, since the substrate does not bend, uniform heat treatment can be performed.

【0050】特に請求項3に記載の発明では,粗面の形
成が容易になり,その製造コストも安くなる。
In particular, according to the third aspect of the present invention, the formation of a rough surface is facilitated and the manufacturing cost is reduced.

【0051】特に請求項4に記載の発明では,表面部材
を適宜の材質で形成することにより,粗面が形成しやす
くなる。また,載置台を載置台本体と表面部材とで構成
するために,表面部材の交換が容易になる。
In particular, according to the fourth aspect of the present invention, a rough surface is easily formed by forming the surface member from an appropriate material. Further, since the mounting table is composed of the mounting table main body and the surface member, replacement of the surface member is facilitated.

【0052】特に請求項5,6に記載の発明では,表面
部材がガラス基板に含まれる主成分で構成されているた
めに,ガラス基板を基板として使用する場合には,静電
気の発生をより確実に防止することが可能となる。
In particular, according to the fifth and sixth aspects of the present invention, since the surface member is composed of the main component contained in the glass substrate, when the glass substrate is used as the substrate, the generation of static electricity is more reliable. Can be prevented.

【0053】特に請求項7,8に記載の発明では,サン
ドブラスト工程等の特別な表面処理が不要となる。
In particular, according to the seventh and eighth aspects of the present invention, a special surface treatment such as a sandblasting step is not required.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本実施の形態にかかる加熱処理装置を備えた塗
布現像処理装置の外観を示す斜視図である。
FIG. 1 is a perspective view showing the appearance of a coating and developing treatment apparatus provided with a heat treatment apparatus according to the present embodiment.

【図2】図1の塗布現像処理装置の平面図である。FIG. 2 is a plan view of the coating and developing apparatus of FIG. 1;

【図3】本実施の形態にかかる加熱処理装置の断面図で
ある。
FIG. 3 is a cross-sectional view of the heat treatment apparatus according to the present embodiment.

【図4】図3の加熱処理装置に具備された加熱載置台の
構成を示す斜視図である。
FIG. 4 is a perspective view showing a configuration of a heating table provided in the heat treatment apparatus of FIG. 3;

【図5】図3の加熱処理装置にLCD基板が搬入される
様子を示す説明図である。
FIG. 5 is an explanatory view showing a state in which an LCD substrate is carried into the heat treatment apparatus of FIG. 3;

【図6】図5の状態からLCD基板が表面部材上に載置
される様子を示す説明図である。
FIG. 6 is an explanatory diagram showing a state in which the LCD substrate is placed on a surface member from the state of FIG. 5;

【図7】図6の表面部材上にLCD基板が載置された様
子を示す説明図である。
FIG. 7 is an explanatory view showing a state where an LCD substrate is mounted on the surface member of FIG. 6;

【図8】他の実施の形態にかかる加熱処理装置に装備さ
れた加熱載置台の構成を示す斜視図である。
FIG. 8 is a perspective view showing a configuration of a heating stage provided in a heat treatment apparatus according to another embodiment.

【図9】図8の加熱載置台の変更例を示す断面図であ
る。
FIG. 9 is a cross-sectional view showing a modification of the heating stage of FIG. 8;

【図10】図9の加熱載置台の変更例を示す断面図であ
る。
FIG. 10 is a cross-sectional view showing a modification of the heating stage of FIG. 9;

【図11】従来の加熱処理装置に装備された加熱載置台
上にLCD基板が載置された様子を示す説明図である。
FIG. 11 is an explanatory diagram showing a state in which an LCD substrate is mounted on a heating mounting table provided in a conventional heat treatment apparatus.

【図12】従来の加熱処理装置に装備されたプロキシミ
ティピン上にLCD基板が支持された様子を示す説明図
である。
FIG. 12 is an explanatory diagram showing a state in which an LCD substrate is supported on proximity pins provided in a conventional heat treatment apparatus.

【符号の説明】[Explanation of symbols]

1 塗布現像処理装置 30 加熱処理装置 42 加熱載置台 51 載置台本体 52 表面部材 55 網 57 金属綿 G LCD基板 DESCRIPTION OF SYMBOLS 1 Coating / developing apparatus 30 Heating apparatus 42 Heating mounting table 51 Mounting table main body 52 Surface member 55 Net 57 Metal cotton G LCD board

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 載置台に載置させた基板を,該載置台の
表面から伝搬される熱で熱処理する熱処理装置におい
て,前記載置台の表面を粗面に形成したことを特徴とす
る,熱処理装置。
1. A heat treatment apparatus for heat treating a substrate placed on a mounting table with heat propagated from the surface of the mounting table, wherein the surface of the mounting table is formed as a rough surface. apparatus.
【請求項2】 前記粗面は,3Sから100Sの粗さで
あることを特徴とする,請求項1に記載の熱処理装置。
2. The heat treatment apparatus according to claim 1, wherein the rough surface has a roughness of 3S to 100S.
【請求項3】 前記粗面は,サンドブラスト工法で形成
されたことを特徴とする,請求項1または2に記載の熱
処理装置。
3. The heat treatment apparatus according to claim 1, wherein the rough surface is formed by a sand blast method.
【請求項4】 前記載置台は,基板に対して熱を供給可
能な載置台本体と,該載置台本体の表面に配置された表
面部材と,からなることを特徴とする,請求項1,2ま
たは3に記載の熱処理装置。
4. The mounting table according to claim 1, further comprising: a mounting table main body capable of supplying heat to the substrate; and a surface member disposed on a surface of the mounting table main body. 4. The heat treatment apparatus according to 2 or 3.
【請求項5】 前記表面部材は,グラナイト,大理石等
の鉱物で形成されたことを特徴とする,請求項4に記載
の熱処理装置。
5. The heat treatment apparatus according to claim 4, wherein the surface member is formed of a mineral such as granite or marble.
【請求項6】 前記表面部材は,ガラスで形成されたこ
とを特徴とする,請求項4に記載の熱処理装置。
6. The heat treatment apparatus according to claim 4, wherein the surface member is formed of glass.
【請求項7】 載置台に載置させた基板を,該載置台の
表面から伝搬される熱で熱処理する熱処理装置におい
て,前記載置台は,基板に対して熱を供給可能な載置台
本体と,該載置台本体の表面に配置された網と,からな
ることを特徴とする,熱処理装置。
7. A heat treatment apparatus for heat-treating a substrate mounted on a mounting table with heat propagated from a surface of the mounting table, wherein the mounting table includes a mounting table main body capable of supplying heat to the substrate. And a net disposed on the surface of the mounting table main body.
【請求項8】 載置台に載置させた基板を,該載置台の
表面から伝搬される熱で熱処理する熱処理装置におい
て,前記載置台は,基板に対して熱を供給可能な載置台
本体と,該載置台本体の表面に配置された綿状部材もし
くは布状部材からなることを特徴とする,熱処理装置。
8. A heat treatment apparatus for heat-treating a substrate mounted on a mounting table with heat transmitted from a surface of the mounting table, wherein the mounting table includes a mounting table main body capable of supplying heat to the substrate and A heat treatment apparatus comprising a cotton-like member or a cloth-like member disposed on the surface of the mounting table main body.
JP10255964A 1998-08-26 1998-08-26 Heat treatment apparatus Withdrawn JP2000077318A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10255964A JP2000077318A (en) 1998-08-26 1998-08-26 Heat treatment apparatus
KR1019990035411A KR100680769B1 (en) 1998-08-26 1999-08-25 Heat processing apparatus
TW088114543A TW525211B (en) 1998-08-26 1999-08-25 Heat treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10255964A JP2000077318A (en) 1998-08-26 1998-08-26 Heat treatment apparatus

Publications (1)

Publication Number Publication Date
JP2000077318A true JP2000077318A (en) 2000-03-14

Family

ID=17286032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10255964A Withdrawn JP2000077318A (en) 1998-08-26 1998-08-26 Heat treatment apparatus

Country Status (3)

Country Link
JP (1) JP2000077318A (en)
KR (1) KR100680769B1 (en)
TW (1) TW525211B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007322630A (en) * 2006-05-31 2007-12-13 Toppan Printing Co Ltd Exposure device
CN107235622A (en) * 2016-03-28 2017-10-10 日本电气硝子株式会社 The heat treatment method of glass substrate
KR102671711B1 (en) * 2016-12-05 2024-06-04 주식회사 케이씨텍 Device for heating and dry substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100966436B1 (en) * 2003-12-30 2010-06-28 엘지디스플레이 주식회사 Table for forming alignment layer to fabricate liquid crystal display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02290013A (en) * 1989-04-28 1990-11-29 Tokyo Electron Ltd Temperature processing method
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
JP3366753B2 (en) * 1994-11-25 2003-01-14 富士通株式会社 Substrate heating device
JPH10284360A (en) * 1997-04-02 1998-10-23 Hitachi Ltd Substrate temperature control equipment and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007322630A (en) * 2006-05-31 2007-12-13 Toppan Printing Co Ltd Exposure device
CN107235622A (en) * 2016-03-28 2017-10-10 日本电气硝子株式会社 The heat treatment method of glass substrate
CN107235622B (en) * 2016-03-28 2020-11-27 日本电气硝子株式会社 Heat treatment method for glass substrate
KR102671711B1 (en) * 2016-12-05 2024-06-04 주식회사 케이씨텍 Device for heating and dry substrate

Also Published As

Publication number Publication date
TW525211B (en) 2003-03-21
KR100680769B1 (en) 2007-02-08
KR20000017530A (en) 2000-03-25

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