JP2000049389A - Semiconductor light emitting device and manufacture thereof - Google Patents

Semiconductor light emitting device and manufacture thereof

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Publication number
JP2000049389A
JP2000049389A JP10211033A JP21103398A JP2000049389A JP 2000049389 A JP2000049389 A JP 2000049389A JP 10211033 A JP10211033 A JP 10211033A JP 21103398 A JP21103398 A JP 21103398A JP 2000049389 A JP2000049389 A JP 2000049389A
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Prior art keywords
light emitting
resin
semiconductor light
phosphor
7a
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JP10211033A
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JP3584163B2 (en
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Takeshi Sano
武志 佐野
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Sanken Electric Co Ltd
サンケン電気株式会社
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Priority to JP21103398A priority Critical patent/JP3584163B2/en
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Publication of JP3584163B2 publication Critical patent/JP3584163B2/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PROBLEM TO BE SOLVED: To reduce the total quantity of fluorescent substance for the wavelength conversion of a light generated by a semiconductor light emitting element of a semiconductor light emitting device.
SOLUTION: Fluorescent substance 7a is selectively mixed in a light emitting part 6b of a resin seal block 6 and absorbs light irradiated from a light emitting diode chip 1 to emit a light of a different emission wavelength. Since the fluorescent substance 7a is mixed in the resin seal block 6 at the light emitting part 6, 9 of the resin seal block 6 outside the light emitting diode chip 1, the light is distributed concentratedly in the top end part of the resin seal block 6.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、半導体発光装置、 BACKGROUND OF THE INVENTION The present invention relates to a semiconductor light emitting device,
特に半導体発光素子から照射される光を波長変換して外部に放出する半導体発光装置及びその製造方法に属する。 Especially belonging to the semiconductor light emitting device and a manufacturing method thereof to emit to the outside wavelength conversion of light emitted from the semiconductor light emitting element.

【0002】 [0002]

【従来の技術】図7は発光ダイオードチップから照射される光の波長を蛍光体によって変換する従来の発光ダイオード装置の断面図を示す。 BACKGROUND ART Figure 7 illustrates a cross-sectional view of a conventional light emitting diode device that converts a wavelength of light emitted from the light emitting diode chip by the phosphor. 従来の発光ダイオード装置では、配線導体(2)のカップ部(2a)の底面(2 In the conventional light emitting diode device, the bottom surface of the cup portion of the wiring conductor (2) (2a) (2
b)に発光ダイオードチップ(1)が固着され、発光ダイオードチップ(1)のカソード電極及びアノード電極は、それぞれボンディングワイヤ(4)及び(5)により配線導体(2)の上端部(8)及び配線導体(3)の上端部(9)に接続される。 b) a light emitting diode is fixed chip (1) is a cathode electrode and an anode electrode of the light emitting diode chip (1) has an upper end portion of the wiring conductor (2) by a respective bonding wire (4) and (5) (8) and is connected to the upper end portion of the wiring conductor (3) (9). 配線導体(2)及び(3) Wiring conductors (2) and (3)
は、例えばそれぞれカソード側及びアノード側のリードとして機能する。 , For example, functions as the cathode side and the anode side of the lead respectively. 配線導体(2)の上部に形成されたカップ部(2a)には発光ダイオードチップ(1)が固着され、カップ部(2a)内には蛍光物質を混入した光透過性の樹脂(7)が充填されるため、発光ダイオードチップ(1)は樹脂(7)により被覆される。 The cup portion formed in the upper portion of the wiring conductor (2) (2a) is fixed light emitting diode chip (1) is a cup portion (2a) optically transparent resin mixed with phosphor in (7) to be filled, the light emitting diode chip (1) is covered with a resin (7). 光透過性の樹脂封止体(6)は、円筒状に形成された樹脂本体(6 Light transparent resin sealing body (6) is a resin body (6 formed in a cylindrical shape
a)と、樹脂本体(6a)と一体に半球状に形成されたレンズ部を有する発光部(6b)とを備えている。 And a), the provided light emitting unit having a lens portion formed in a hemispherical shape integrally with the resin body (6a) and (6b). なお、実際の発光ダイオード装置では、樹脂本体(6a) In actual light emitting diode device, a resin body (6a)
からも若干の光が放出されるが、本明細書では、便宜上発光ダイオードチップ(1)の上方側の樹脂封止体(6)を発光部(6b)と称する。 Although some light is emitted from, in this specification, for convenience referred to the upper side of the resin sealing body of light emitting diode chips (1) (6) and the light emitting portion (6b). 発光ダイオードチップ(1)、カソード側の配線導体(2)のカップ部(2 Light-emitting diode chip (1), the cup portion of the cathode side of the wiring conductors (2) (2
a)及び上端部(8)、アノード側の配線導体(3)の上端部(9)、ボンディングワイヤ(4、5)は樹脂封止体(6)の樹脂本体(6a)内に封入される。 a) and the upper end (8), the upper end portion of the anode side of the wiring conductor (3) (9), is enclosed in the bonding wire (4, 5) resin body (6a) in the resin sealing body (6) .

【0003】発光ダイオード装置のカソード側の配線導体(2)とアノード側の配線導体(3)との間に電圧を印加し、発光ダイオードチップ(1)に通電すると、発光ダイオードチップ(1)から照射される光は、樹脂(7)内を通り配線導体(2)のカップ部(2a)の側壁(2c)で反射した後に、透明な樹脂封止体(6)を通り発光ダイオード装置の外部に放出される。 [0003] applying a voltage between the cathode side of the wiring conductors (2) and the anode side of the wiring conductor of the light emitting diode device (3), when energized light emitting diode chip (1), from the light emitting diode chip (1) light irradiation, an external after being reflected by the side wall (2c) of the cup portion of the resin (7) in the street wiring conductors (2) (2a), as a light emitting diode device a transparent resin sealing body (6) It is released to. また、発光ダイオードチップ(1)の上面から放射されてカップ部(2a)の側壁(2c)で反射されずに直接に樹脂(7)及び樹脂封止体(6)を通って発光ダイオード装置の外部に放出される光もある。 Further, the light emitting diode chip is radiated from the upper surface cup portion (1) directly without being reflected by the side walls (2c) in the resin (7) and the resin sealing body (6) through to the light emitting diode device (2a) light emitted outside also. 樹脂封止体(6)の先端にはレンズ状の発光部(6b)が形成され、樹脂封止体(6)内を通過する光は、レンズ状の発光部(6b) The tip of the resin sealing body (6) is lenticular light emitting portion (6b) is formed, the light passing through the resin sealing body (6), the lens-shaped light-emitting portion (6b)
によって集光されて指向性が高められる。 Directivity is condensed is increased by. 発光ダイオードチップ(1)の発光時に、発光ダイオードチップ(1)から照射される光は樹脂(7)内に混入された蛍光物質によって異なる波長に変換されて放出される。 During light emission of the light emitting diode chip (1), light emitted from the light emitting diode chip (1) is released is converted to a different wavelength by the fluorescent substance which is mixed into the resin (7). この結果、発光ダイオード装置からは発光ダイオードチップ(1)から照射された光とは異なる波長の光も放出される。 As a result, the light emitting diode device is also different wavelengths of light emitted from the light emitted from the light emitting diode chip (1).

【0004】 [0004]

【発明が解決しようとする課題】従来の発光ダイオード装置を製造する際に、まず配線導体(2)のカップ部(2a)に発光ダイオードチップ(1)を取付け、次に発光ダイオードチップ(1)と配線導体(2、3)間にボンディングワイヤ(4、5)を取付け、その後カップ部(2a)に樹脂(7)を注入する。 [SUMMARY OF THE INVENTION When producing a conventional light emitting diode device, fitted with a light-emitting diode chip (1) First, the cup portion of the wiring conductor (2) (2a), then the light emitting diode chip (1) and attaching a bonding wire (4, 5) to the wiring conductor (2, 3) between, and then injecting resin (7) to the cup portion (2a). 樹脂(7)をカップ部(2a)に注入するとき、樹脂充填装置のシリンジ(syringe/スポイト)の先端をカップ部(2a)の上部に近接させる。 When injecting the resin (7) to the cup portion (2a), to close the tip of the syringe of the resin filling device (syringe / dropper) on top of the cup portion (2a). この場合、シリンジの先端が発光ダイオードチップ(1)及びボンディングワイヤ(5、6) In this case, the tip of the syringe is a light emitting diode chip (1) and the bonding wires (5, 6)
に接触することが多く、発光ダイオードチップ(1)及びボンディングワイヤ(5、6)に接触すると、発光ダイオードチップ(1)を傷つけたり、ボンディングワイヤ(5、6)を変形し又は断線若しくはフレームとの短絡を生じさせる場合がある。 Often in contact with, when in contact with the light emitting diode chip (1) and the bonding wires (5, 6), or damage the light emitting diode chip (1), and modifying the bonding wires (5, 6), breaking or frame there is a case to cause a short-circuit. 特に金又はアルミニウム等の軟質金属の細線で形成されるボンディングワイヤ(5、6)は、小さな外力が加えられても変形又は断線を生じやすい。 In particular bonding wires (5, 6) formed by thin lines of soft metal such as gold or aluminum, a small external force is likely to deform or break be added.

【0005】ボンディングワイヤ(5、6)が断線又は短絡した発光ダイオード装置は不良品となる結果、製造歩留まりが低下する。 [0005] Bonding wires (5,6) is a light-emitting diode device was disconnected or short-circuited defective result, the manufacturing yield is lowered. また、外力が加えられたボンディングワイヤ(5、6)は、断線又は短絡しなくても、発光ダイオードチップ(1)のカソード電極若しくはアノード電極又は配線導体(2、3)に対するボンディングワイヤ(5、6)の接続部分の接着力が低下することがあり、信頼性の点で問題があった。 The bonding wire (5, 6) an external force is applied, without disconnection or short-circuit, the light emitting diode bonding wire (5 to the cathode electrode or the anode electrode or the wiring conductors (2, 3) of the chip (1), may adhesion of the connecting portion 6) is lowered, there is a problem in terms of reliability.

【0006】一方従来の半導体発光装置では、カップ部(2a)内だけに蛍光体(7a)を含む樹脂(7)を注入するので、蛍光体(7a)の使用量は少ないが、カップ部(2a)のない配線導体(2)を使用することができない。 On the other hand in the conventional semiconductor light emitting device, since the resin is injected (7) containing only the cup portion (2a) phosphor (7a), but the amount of phosphor (7a) is small, the cup portion ( can not be used 2a) with no wiring conductor (2). また、発光ダイオードチップ(1)の周囲に集中して蛍光体(7a)が分布されるので、発光ダイオードチップ(1)が通電され発熱すると蛍光体(7a)の種類によっては温度消光を起こして波長変換効率が低下する問題があった。 Further, since the phosphor concentrated around the light emitting diode chip (1) (7a) are distributed, depending on the type of the light emitting diode chip (1) is energized to generate heat phosphor (7a) causing the temperature quenching wavelength conversion efficiency is a problem of decrease.

【0007】このため、図8に示すように、予め全体に蛍光体(7a)を含有させた樹脂封止体(6)中にリードフレームを挿入して半導体発光装置を製造する方法も提案されているが、この構造では、発光ダイオードチップ(1)より下方まで蛍光体(7a)が樹脂封止体(6)中に含有されるため、発光ダイオードチップ(1)より下方の蛍光体(7a)には発光ダイオードチップ(1)の光が当らず、波長変換に関与しないむだな蛍光体(7a)が存在する。 [0007] Therefore, as shown in FIG. 8, it is also proposed a method of manufacturing a semiconductor light-emitting device by inserting the lead frame to the entire pre-phosphor (7a) in the sealing body resin containing (6) and that although, in this structure, the light emitting the diode chip (1) from up downwards phosphor (7a) is contained in the resin sealing body (6), light emitting diodes below the phosphor than the chip (1) (7a ) to not hit the light emitting diode chip (1), there wasted phosphor which does not participate in the wavelength conversion (7a) is. このため、高価な蛍光体(7a)の使用量が必要以上に多くなって製品価格が高くなる難点があった。 Therefore, there is a drawback that the product price is high increasingly the more than necessary amount of expensive phosphor (7a).

【0008】本発明は、半導体発光素子から発生する光の波長変換を行なう蛍光体の総量を減少できる半導体発光装置及びその製造方法を提供することを目的とする。 [0008] The present invention aims to provide a semiconductor light emitting device and a manufacturing method thereof capable of reducing the amount of phosphor for performing wavelength conversion of light generated from the semiconductor light emitting element.
また、本発明は、半導体発光素子の発熱による蛍光体の温度消光の恐れがない半導体発光装置及びその製造方法を提供することを目的とする。 The present invention also aims to provide a phosphor semiconductor light emitting device and a manufacturing method thereof there is no possibility of the temperature quenching of due to heat generation of the semiconductor light emitting element. 本発明は、半導体発光素子及びボンディングワイヤの損傷、断線、短絡又は変形を発生しない半導体発光装置及びその製造方法を提供することを目的とする。 The present invention aims damage of the semiconductor light emitting element and the bonding wire, disconnection, to provide a semiconductor light-emitting device and its manufacturing method does not generate a short circuit or deformation. 本発明は、蛍光体による発光波長変換機能を有しつつも信頼性が高く高効率で安価な半導体発光装置及びその製造方法を提供することを目的とする。 The present invention aims to provide an inexpensive semiconductor light emitting device and a manufacturing method thereof in high efficiency even reliability while having an emission wavelength converting function by the phosphor.

【0009】 [0009]

【課題を解決するための手段】本発明の半導体発光装置は、一対の配線導体(2、3)と、一対の配線導体(2、3)の一方の端部に載置された半導体発光素子(1)と、半導体発光素子(1)の一方の主面に形成された電極(1a、1b)と一対の配線導体(2、3)の少なくとも一方との間を電気的に接続するボンディングワイヤ(4、5)と、半導体発光素子(1)、ボンディングワイヤ(4、5)及び配線導体(2、3)の一方の端部を被覆する光透過性の樹脂封止体(6)とを備え、 The semiconductor light-emitting device of the present invention According to an aspect of the pair of the wiring conductors (2, 3), a pair of wiring conductors (2, 3) one end on the mounting semiconductor light-emitting device (1) and, bonding wires for electrically connecting between at least one of the one main surface to form an electrode of the semiconductor light emitting element (1) (1a, 1b) and a pair of wiring conductors (2, 3) and (4,5), the semiconductor light emitting element (1), and a bonding wire (4, 5) and the light transmitting resin sealing body which covers one end of the wiring conductor (2, 3) (6) provided,
樹脂封止体(6)は半導体発光素子(1)を被覆すると共に一方の端部から一対の配線導体(2、3)の他方の端部が導出された樹脂本体(6a)と、樹脂本体(6 Resin sealing body (6) is a semiconductor light emitting element (1) one of the pair of the wiring conductor from the end portion (2, 3) other resin body whose ends are derived in conjunction with coating the (6a), a resin body (6
a)の他方の端部に一体に形成され且つ半導体発光素子(1)からの光を外部に放出する発光部(6b)とを備えている。 And a light emitting portion for emitting light from and the semiconductor light emitting element is formed integrally (1) to the outside (6b) at the other end of the a). この半導体発光装置では、樹脂封止体(6) In this semiconductor light-emitting device, the resin sealing body (6)
のうち発光部(6b)に蛍光体(7a)が選択的に混入され、蛍光体(7a)は、半導体発光素子(1)から照射される光を吸収して他の異なる発光波長の光を放出する。 Phosphor (7a) is selectively mixed into the light emitting portion (6b) of the phosphor (7a) is light other different emission wavelengths and absorb light emitted from the semiconductor light emitting element (1) discharge.

【0010】本発明によれば、半導体発光素子(1)より外側で樹脂封止体(6)の発光部(6b)側に蛍光体(7a)が樹脂封止体(6)内に配合されるため、樹脂封止体(6)の先端部に集中して蛍光体(7a)が分布する。 According to the present invention, the light emitting portion (6b) side to the phosphor of the resin sealing body (6) (7a) is blended in the resin sealing body (6) in the outside from the semiconductor light emitting element (1) because the phosphor is concentrated in the tip portion of the resin sealing body (6) (7a) are distributed. このため、有効に使用する蛍光体(7a)の総量を減少することができ、半導体発光素子(1)の発熱による蛍光体(7a)の温度消光の恐れもない。 Therefore, effective amount of phosphor (7a) can be reduced and used, there is no fear of thermal quenching of the phosphor due to heat generation of the semiconductor light emitting element (1) (7a). また樹脂充填機のシリンジで半導体発光素子(1)及びワイヤを損傷し又は断線・短絡・変形の危険がない。 The semiconductor light emitting device (1) with a syringe of the resin filling machine and there is no risk of damage or disconnection and short-deformed wire. 本発明の半導体発光装置では、半導体発光素子(1)の発光を樹脂封止体(6)先端部に集中して分布する蛍光体(7a) In the semiconductor light-emitting device of the present invention, a phosphor the emission distribution concentrated in the resin sealing body (6) tip of the semiconductor light emitting element (1) (7a)
で所望の光波長に変換し樹脂封止体(6)を通して外部に放出することができる。 Desired can be discharged to the outside through the conversion to a resin sealing body to the light wavelength (6) in.

【0011】本発明の実施の形態では、樹脂封止体(6)の樹脂本体(6a)は円筒状に形成され、発光部(6b)は半球状に形成される。 [0011] In the embodiment of the present invention, the resin body of the resin sealing body (6) (6a) is formed in a cylindrical shape, the light emitting portion (6b) is formed in a hemispherical shape.

【0012】本発明による半導体発光装置の製造方法は、一対の配線導体(2、3)と、一対の配線導体(2、3)の一方の端部に載置された半導体発光素子(1)と、半導体発光素子(1)の一方の主面に形成された電極(1a、1b)と一対の配線導体(2、3)の少なくとも一方との間を電気的に接続するボンディングワイヤ(4、5)とを備えたリードフレーム組立体を準備する工程と、半導体発光素子(1)を含むリードフレーム組立体の一方の端部を成形型(10)のキャビティ(11)内に配置する前又は後に蛍光体(7a)を含む流動化した光透過性の樹脂(12)を成形型(10)のキャビティ(11)内に充填する工程と、半導体発光素子チップ(1)よりも配線導体(2、3)の他方の端部から離間した位置に蛍光体 A method of manufacturing a semiconductor light-emitting device according to the present invention, a pair of wiring conductors (2, 3), the semiconductor light emitting element mounted on one end of a pair of wiring conductors (2, 3) (1) When the bonding wire (4 for electrically connecting between at least one of the one main surface to form an electrode of the semiconductor light emitting element (1) (1a, 1b) and a pair of wiring conductors (2, 3), 5) a step of preparing a lead frame assembly with a pre-arranged in the cavity (11) of the semiconductor light emitting element (1) mold one end portion of the lead frame assembly comprising (10) or after the step of filling the cavity (11) of the phosphor fluidized light transmitting resin including (7a) (12) a mold (10), a semiconductor light-emitting device chip (1) wiring than conductors (2 , phosphor at a position spaced apart from the other end of 3) 7a)を樹脂(12)内で移動させる工程と、キャビティ(11)内で樹脂(1 The 7a) a step of moving within the resin (12), the resin in the cavity (11) (1
2)を硬化させて、樹脂封止体(6)を形成した後、リードフレーム組立体を成形型(10)から取り出す工程とを含む。 2) curing the, after forming the resin sealing body (6), and a step of taking out the lead frame assembly from the mold (10).

【0013】本発明の実施の形態では、樹脂(12)より大きな比重を有する蛍光体(7a)を樹脂(12)内で自重により沈降させて蛍光体(7a)を樹脂(12) [0013] In the embodiment of the present invention, a resin phosphor having a larger specific gravity than the (12) (7a) precipitated by its own weight in the resin (12) phosphor (7a) of the resin (12)
内で移動させる工程又は成形型(10)を回転させて半導体発光素子(1)よりも配線導体(2、3)の他方の端部から離間した位置に蛍光体(7a)を樹脂(12) Process or mold is moved in the inner phosphor at a position spaced from the other end (10) to rotate the than the semiconductor light emitting element (1) with the wiring conductors (2,3) (7a) of the resin (12)
内で移動させる工程を含んでもよい。 It may comprise the step of moving within. 樹脂封止体(6) Resin sealing body (6)
を硬化させる加熱過程で樹脂(12)の粘度が一旦低下するため、蛍光体(7a)が大きな比重によって沈降し、蛍光体(7a)は樹脂封止体(6)の先端部に集中して分布される。 Since the viscosity of the resin (12) is reduced temporarily during heating to cure the settle phosphor (7a) is by a large specific gravity, phosphor (7a) is concentrated in the tip portion of the resin sealing body (6) It is distributed. また、樹脂封止体(6)を硬化させる加熱過程で遠心注型により成形型(10)を回転させると、比重の大きな蛍光体(7a)は径方向外側に移動し、蛍光体(7a)は樹脂封止体(6)の先端部に集中して分布される。 Further, when the heating process of curing the resin sealing body (6) rotating the mold (10) by centrifugal casting, large phosphor specific gravity (7a) moves radially outwardly, phosphor (7a) is distributed concentrating on the tip portion of the resin sealing body (6).

【0014】また、本発明の実施の形態では、半導体発光素子(1)を含むリードフレーム組立体の一方の端部を成形型(10)のキャビティ(11)内に配置した後、半導体発光素子(1)よりも前記配線導体(2、 Further, in the embodiment of the present invention, after placement in the cavity (11) of the semiconductor light emitting element (1) mold one end portion of the lead frame assembly comprising (10), the semiconductor light emitting element (1) said wiring conductors than (2,
3)の他方の端部から離間した位置まで蛍光体(7a) To a position spaced from the other end of 3) phosphors (7a)
を混入した光透過性の樹脂(12)を成形型(10)のキャビティ(11)内に充填する工程と、キャビティ(11)の残部に蛍光体(7a)を混入しない樹脂(1 A step of filling the cavity (11) of the contaminating light transparent resin (12) a mold (10), the cavity (11) rest on the phosphor (7a) resin not mixed with the (1
2)を充填して半導体発光素子(1)を被覆する工程と、キャビティ(11)内で樹脂(12)を硬化させて、樹脂封止体(6)を形成した後、リードフレーム組立体を成形型(10)から取り出す工程とを含む。 A step of covering the semiconductor light-emitting device (1) filled with 2), by curing the resin (12) in the cavity (11), after forming a resin sealing body (6), the lead frame assembly and a step of taking out from the mold (10). 始めに蛍光体(7a)が含まれた樹脂(12)を注型し、その後に蛍光体(7a)が混入されない樹脂(13)を注型することにより、樹脂封止体(6)の先端部に蛍光体(7a)が集中して分布される。 Phosphor (7a) is contained resin (12) is cast first, and then used phosphor (7a) is casting resin which is not mixed (13), the tip of the resin sealing body (6) phosphor (7a) are distributed concentrating on parts. 半導体発光素子(1) The semiconductor light emitting element (1)
は蛍光体(7a)を混入しない樹脂(13)により被覆され、キャビティ(11)内で樹脂(12、13)を硬化させて、樹脂封止体(6)を形成した後、リードフレーム組立体を成形型(10)から取り出すことができる。 It is covered with a resin (13) not mixed phosphor (7a), to cure the resin (12, 13) in the cavity (11), after forming a resin sealing body (6), the lead frame assembly it can be taken out from the mold (10).

【0015】 [0015]

【発明の実施の形態】以下、発光ダイオード装置に適用した本発明による半導体発光装置の実施の形態を図1〜 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, FIG. 1 to the embodiment of the semiconductor light-emitting device according to the present invention applied to a light emitting diode device
図6について説明する。 Figure 6 will be described. 図1〜図6では、図7及び図8 In FIGS. 6, 7 and 8
に示す箇所と同一の部分には同一の符号を付し、説明を省略する。 The same reference numerals are given to the same parts as points shown in, the description thereof is omitted.

【0016】半導体発光装置の半導体発光素子として図1に示す発光ダイオードチップ(1)より外側で樹脂封止体(6)の発光部(6b)側に蛍光体(7a)が樹脂封止体(6)内に配合される。 The light emitting portion of the light emitting diode chip (1) from the resin sealing body on the outside as shown in FIG. 1 as the semiconductor light emitting element of the semiconductor light-emitting device (6) (6b) side to the phosphor (7a) is a resin sealing body ( 6) it is blended in. 蛍光体(7a)は、樹脂封止体(6)の長さ方向の中央部より発光部(6b)側に配合される。 Phosphor (7a) is formulated in the light emitting portion than the central portion in the longitudinal direction of the resin sealing body (6) (6b) side. この場合、図2に示すように、半球状の発光部(6b)内にのみ蛍光体(7a)を配合してもよい。 In this case, as shown in FIG. 2, it may be incorporated only in the light emitting portion of the hemispherical (6b) phosphor (7a). 蛍光体(7a)の密度は樹脂封止体(6)の密度より大きい。 The density of the phosphor (7a) is greater than the density of the resin sealing body (6). 蛍光体(7a)は、発光ダイオードチップ(1)から照射される光の一部を吸収して他の異なる発光波長に変換する。 Phosphor (7a) converts absorbs a part of light emitted from the light emitting diode chip (1) in emission wavelength other different.

【0017】発光ダイオードチップ(1)より外側、即ち発光ダイオードチップ(1)の上面よりも樹脂封止体(6)の発光部(6b)側に蛍光体(7a)が樹脂封止体(6)内に配合されるため、樹脂封止体(6)の先端部側に集中して蛍光体(7a)が分布する。 The outer side of the light emitting diode chip (1), i.e., the light-emitting light-emitting portion of the resin sealing body (6) than the upper surface of the diode chip (1) (6b) side to the phosphor (7a) is a resin sealing body (6 ) to be incorporated into the phosphor concentrated on the front end portion of the resin sealing body (6) (7a) are distributed. このため、 For this reason,
蛍光体(7a)を波長変換に有効に機能させて蛍光体(7a)の使用総量を減少することができる。 Phosphor (7a) and effective to function to the wavelength conversion can be reduced using the total amount of phosphor (7a). また、発光ダイオードチップ(1)の周囲に存在する蛍光体(7 The phosphor which is present around the light emitting diode chip (1) (7
a)の分布が少ないため、発光ダイオードチップ(1) For distribution of a) is small, the light emitting diode chip (1)
が発熱しても蛍光体(7a)の温度上昇を招かず、蛍光体(7a)の温度消光による波長変換効率の低下を来さない。 There without causing an increase in temperature of the phosphor (7a) also generates heat, no hexa a reduction in wavelength conversion efficiency due to the temperature quenching of phosphor (7a). また樹脂充填装置のシリンジで発光ダイオードチップ(1)及びワイヤを損傷し又は断線・短絡・変形する危険がない。 The light emitting diode chip (1) with a syringe of the resin filling device and there is no risk of damaging or breaking or short circuit, deforming the wire. 本発明の半導体発光装置では、発光ダイオードチップ(1)から放出された光を樹脂封止体(6)の先端部に集中して分布する蛍光体(7a)で所望の発光波長に変換し樹脂封止体(6)の外部に放出することができる。 In the semiconductor light-emitting device of the present invention, the light emitting diode chip (1) converted into a desired emission wavelength light emitted by the phosphor distribution concentrated at the tip portion of the resin sealing body (6) (7a) from a resin can be released to the outside of the sealing body (6). また、発光ダイオードチップ(1)から放出された光のうちの一部は蛍光体(7a)で波長変換されずに樹脂封止体(6)の外部に放出される。 Also, part of the light emitted from the light emitting diode chip (1) is discharged to the outside of the phosphor (7a) resin sealing body (6) without being wavelength converted at. 従って、樹脂封止体(6)の外部からは波長変換された光と波長変換されない光とが混色した光が観察される。 Therefore, the light and the light that is not light and the wavelength conversion whose wavelength is converted to color mixing from the outside of the resin sealing body (6) is observed.

【0018】本発明による半導体発光装置を製造する際に、まずリードフレーム組立体を準備する。 [0018] When manufacturing the semiconductor light-emitting device according to the present invention, first prepared a lead frame assembly. 図示しないが、このリードフレーム組立体は、一対の配線導体(2、3)と、一対の配線導体(2、3)の一方の端部に接着された発光ダイオードチップ(1)と、発光ダイオードチップ(1)に形成された電極(1a、1b)と一対の配線導体(2、3)の他方の端部とを電気的に接続するボンディングワイヤ(4、5)とを備えている。 Although not shown, the lead frame assembly includes a pair of wiring conductors (2, 3), a light emitting diode chip bonded to one end of a pair of wiring conductors (2, 3) (1), a light emitting diode and a bonding wire (4, 5) for electrically connecting the other end of the electrode formed on the chip (1) (1a, 1b) and a pair of wiring conductors (2, 3).
次に、蛍光体(7a)を含む流動化した光透過性の樹脂(12)を成形型(10)のキャビティ(11)内に充填する。 Then filled into the cavity (11) of the phosphor fluidized light transmitting resin including (7a) (12) mold (10). その後、発光ダイオードチップ(1)を含むリードフレーム組立体の端部を成形型(10)のキャビティ(11)内に配置した後、樹脂(12)を加熱しながら、樹脂(12)からの配線導体(2、3)の導出方向に対して反対側に且つ発光ダイオードチップ(1)より外側に、即ち発光ダイオードチップ(1)よりも樹脂(12)の配線導体(2、3)が導出された端部から離間した位置に蛍光体(7a)を樹脂(12)内で移動させる。 Then, after placing the light emitting diode chip (1) mold the ends of the lead frame assembly comprising (10) a cavity (11) within, while heating the resin (12), wiring from the resin (12) outside and from the light emitting diode chip (1) on the opposite side with respect to the extending direction of the conductor (2, 3), i.e. wiring conductors of the light emitting diode resin than the chip (1) (12) (2, 3) it is derived phosphor at a position spaced from the end portion (7a) is moved in a resin (12).

【0019】樹脂封止体(6)からの配線導体(2、 The wiring conductor from the resin sealing body (6) (2,
3)の導出方向に対して反対側に且つ発光ダイオードチップ(1)より外側に蛍光体(7a)を樹脂(12)内で移動させるとき、種々の方法がある。 And the light emitting diode chip (1) from the phosphor on the outside on the opposite side with respect to the extending direction of 3) (7a) when moving in the resin (12), there are a variety of ways. 例えば、図3及び図4に示すように、樹脂(12)より大きな比重を有する蛍光体(7a)を樹脂(12)内で自重により沈降させて蛍光体(7a)を樹脂(12)内で移動させる。 For example, as shown in FIGS. 3 and 4, a phosphor having a larger specific gravity than the resin (12) to (7a) allowed to settle by gravity within the resin (12) phosphor (7a) in the resin (12) so moved.
樹脂(12)を硬化させる加熱過程で樹脂(12)の粘度が一旦低下するため、蛍光体(7a)が大きな比重によって沈降し、蛍光体(7a)は樹脂(12)の先端部(下側)に集中して分布される。 Since the viscosity of the resin during heating to cure the resin (12) (12) is lowered once, precipitated phosphor (7a) is by a large specific gravity, the tip portion of the phosphor (7a) of the resin (12) (lower side ) concentration to be distributed.

【0020】また、本発明の半導体発光装置には、市販の蛍光顔料又は蛍光染料を使用することができるが、一般に図3及び図4に示すように沈降によって樹脂封止体(6)の先端部に集中的に蛍光顔料又は蛍光染料を分布させることは難しい。 Further, in the semiconductor light-emitting device of the present invention may be a commercially available fluorescent pigments or fluorescent dyes, the tip of the general resin sealing body by precipitation as shown in FIG. 3 and FIG. 4 (6) intensively be distributed fluorescent pigment or fluorescent dye to parts are difficult. このため、図5及び図6に示すように、発光ダイオードチップ(1)より下側となるように樹脂封止体(6)の発光部(6b)を形成するための液状エポキシ樹脂(12)を成形型(10)のキャビティ(11)内に充填する。 Thus, FIGS. 5 and 6, the light emitting diodes liquid epoxy resin (12) for forming the light emitting portion of the resin sealing body (6) and (6b) so as to be below the chip (1) filled into the cavity (11) of the mold (10). 液状エポキシ樹脂(12)内には蛍光体(7a)として蛍光顔料又は蛍光染料が適量混合されている。 The inside liquid epoxy resin (12) fluorescent pigments or fluorescent dyes are mixed with an appropriate amount as phosphor (7a). 次に、発光ダイオードチップ(1)を含むリードフレーム組立体の端部を成形型(10)のキャビティ(11)内に配置した後、蛍光顔料、蛍光染料を混合しない液状エポキシ樹脂(13)を注入し、適当な温度プログラムに従って加熱硬化させると、樹脂封止体(6)の先端部に蛍光体(7a)が集中して分布する所期の構造が得られる。 Then, after arranging the light emitting diode chip (1) mold the ends of the lead frame assembly comprising (10) of the cavity (11) inside, a fluorescent pigment, a liquid epoxy resin not mixed with fluorescent dyes (13) injected and cured by heating according to the appropriate temperature program, intended structure phosphor tip of the resin sealing body (6) (7a) are distributed is concentrated is obtained.

【0021】更に、別法として、成形型(10)を回転させる遠心注型を使用して発光ダイオードチップ(1) Furthermore, alternatively, using a centrifugal casting mold rotating mold (10) light-emitting diode chip (1)
より外側に蛍光体(7a)を樹脂(12)内で移動させてもよい。 More phosphor outward (7a) may be moved within the resin (12). 樹脂(12)を硬化させる加熱過程で遠心注型により成形型(10)を回転させると、比重の大きな蛍光体(7a)は径方向外側に移動し、蛍光体(7a) When the heating process of curing the resin (12) to rotate the mold (10) by centrifugal casting, large phosphor specific gravity (7a) moves radially outwardly, phosphor (7a)
は樹脂(12)の先端部に集中して分布される。 It is distributed concentrating on the tip portion of the resin (12). その後、キャビティ(11)内で樹脂(12)を硬化させて、樹脂封止体(6)を形成した後、リードフレーム組立体を成形型(10)から取り出す。 Thereafter, by curing the resin (12) in the cavity (11), after forming a resin sealing body (6), take out the lead frame assembly from the mold (10). なお、前記成形型(10)には周知のトランスファモールド金型、インジェクションモールド金型、ポッティング用金型等種々の金型が含まれる。 Incidentally, the forming die (10) a known transfer molding die, the injection molding die includes a potting mold such as various mold.

【0022】本発明の実施の形態は変更が可能である。 [0022] Embodiments of the present invention can be changed.
例えば、半導体チップ(1)を含むリードフレーム組立体の一方の端部を成形型(10)のキャビティ(11) For example, the semiconductor chip (1) mold one end portion of the lead frame assembly including a cavity (10) (11)
内に配置した後に、キャビティ(11)内に樹脂(1 After placement within the resin into the cavity (11) (1
2)を充填する代わりに、キャビティ(11)内に樹脂(12)を充填した後に、樹脂(12)内に半導体チップ(1)を浸漬しながらリードフレーム組立体の一方の端部を成形型(10)のキャビティ(11)内に配置してもよい。 Instead of filling the 2), the cavity (11) after filling the resin (12) into the mold one end portion of the lead frame assembly while immersed semiconductor chip (1) in the resin (12) it may be disposed in the cavity (11) of (10).

【0023】 [0023]

【実施例】アノード側の配線導体(3)とカソード側の配線導体(2)との間に電圧を印加して発光ダイオードチップ(1)を発光させると、発光ダイオードチップ(1)から放出された光は直接又はカップ部(2a)内で反射された後に樹脂封止体(6)の先端部に設けられた発光部(6b)に達する。 When a voltage is applied to the light emitting diodes emit light chip (1) between the EXAMPLES anode side of the wiring conductor (3) and the cathode side of the wiring conductors (2), emitted from the light emitting diode chip (1) light reaches the light-emitting portion provided at a front end portion of the resin sealing body after being reflected by the direct or cup portion (2a) (6) (6b). 樹脂封止体(6)の発光部(6b)に達した光の一部は、蛍光体(7a)によって波長変換され元の光と異なった波長の光となる。 Some of the light reaching the light emitting portion (6b) of the resin sealing body (6) is a light of a wavelength different from the wavelength-converted source of light by the phosphor (7a).

【0024】発光ダイオードチップ(1)の光線を吸収しながら、その光線の波長とは異なる波長の光線を発する蛍光体(7a)は、基体、賦活体及び融剤より成る。 [0024] while absorbing rays of light-emitting diode chip (1), a phosphor emitting a light of a wavelength different from that of the light beam (7a), the substrate consists of activated body and flux.
基体は、アルミニウム、亜鉛、カドミウム、マグネシウム、シリコン、イットリウム等の金属及び希土類元素等の酸化物、硫化物、珪酸塩、バナジン酸塩等の無機蛍光体から選択され、銅、鉄、ニッケルのそれらは不適である。 Substrate is aluminum, zinc, cadmium, magnesium, silicon, oxides such as metals and rare earth elements and yttrium, sulfides, silicates, are selected from inorganic phosphors, such as vanadate, copper, iron, their nickel it is not suitable. 賦活体は、銀、銅、マンガン、クロム、ユウロピウム、セリウム、亜鉛、アルミニウム、鉛、リン、砒素、 Activation body, silver, copper, manganese, chromium, europium, cerium, zinc, aluminum, lead, phosphorus, arsenic,
金等で一般に0.001%〜数%程度の微量が用いられる。 In general 0.001% to several% of the trace is used with gold or the like. 融剤は、塩化ナトリウム、塩化カリウム、炭酸マグネシウム、塩化バリウムが使用される。 Fluxing agent, sodium chloride, potassium chloride, magnesium carbonate, barium chloride is used. 前記無機蛍光体の外、フルオレセイン、エオシン、油類(鉱物油)及び市販の蛍光顔料、蛍光染料等の有機蛍光体を使用できる。 Outside of the inorganic phosphor, fluorescein, eosin, oils (mineral oil) and commercially available fluorescent pigments, and organic phosphors such as fluorescent dyes can be used.

【0025】具体的には、例えば発光ダイオードチップ(1)に発光波長のピークが約440nmから約470 [0025] Specifically, for example, about from the light emitting diode chip peak emission wavelength in (1) of about 440 nm 470
nmのGaN系の青色発光ダイオードチップ(1)を用い、また蛍光体(7a)には賦活剤としてCe(セリウム)を適量添加したYAG(イットリウム・アルミニウム・ガーネット、化学式Y 3 Al 512 、励起波長のピーク約450nm、発光波長のピーク約540nmの黄緑色光)の結晶粉末を用いれば、青色発光ダイオードチップ(1)の発光波長とYAG蛍光体(7a)の励起波長とが略一致するため効率よく波長変換が行われ、またY nm of a GaN-based blue light emitting diode chip (1), also YAG (yttrium aluminum garnet phosphor (7a) was added an appropriate amount of Ce (cerium) as an activator, Formula Y 3 Al 5 O 12, excitation peak wavelength of about 450 nm, the use of the crystalline powder yellowish green light) peak about 540nm emission wavelength, and the excitation wavelength of the emission wavelength and the YAG phosphor of the blue light emitting diode chip (1) (7a) substantially coincide efficient wavelength conversion is performed for, also Y
AG蛍光体(7a)の発光スペクトル分布が半値幅約1 AG phosphor emission spectrum distribution half width of about 1 (7a)
30nmとブロードなため、半導体発光装置の外部に放出される光は発光ダイオードチップ(1)の発光と蛍光体(7a)の発光とが混色した青みがかった白色光となる。 For 30nm and broad, the light emitted to the outside of the semiconductor light emitting device is white light and light emission of the light emitting phosphor of the light emitting diode chip (1) (7a) is that bluish color mixing.

【0026】半導体発光装置の発光を更に所望の色調に調整するとき、例えばGa(ガリウム)若しくはLu [0026] When adjusting the further desired color tone emission of semiconductor light emitting devices, for example, Ga (gallium) or Lu
(ルテチウム)等又はGd(ガドリニウム)等を適量添加してYAG蛍光体(7a)の結晶構造を一部変更し、 Partially changed the crystal structure of the YAG phosphor (7a) was added an appropriate amount of (lutetium), etc., or Gd (gadolinium), etc.,
短波長側又は長波長側にシフトさせて発光スペクトル分布を変更することができる。 It is shifted to the short wavelength side or the long wavelength side can be changed emission spectrum distribution. 半導体発光装置から外部に放出される光の指向角を広げるため、カップ部(2a) To broaden the directivity angle of light emitted to the outside from the semiconductor light emitting device, the cup portion (2a)
のないリードフレームを用いるとき又は樹脂封止体(6)に粉末シリカ等の散乱剤を混合させた透明樹脂を用いるとき、樹脂封止体(6)の発光部(6b)のみに蛍光体(7a)を分布させた構造では、発光ダイオードチップ(1)の横方向から放出される光成分が蛍光体(7a)に当らず波長変換されないおそれがある。 When using the time used no lead frame or a resin sealing body (6) in a transparent resin obtained by mixing scattering agent in powder such as silica, the light emitting portion of the resin sealing body (6) (6b) only the phosphor ( in the structure with distributed 7a), light components emitted from the lateral direction may not be wavelength-converted without hit the phosphor (7a) of the light-emitting diode chip (1). このため、図1に示すように蛍光体(7a)をリードフレームの先端部を形成する配線導体(2、3)の略上端部(8、9)まで蛍光体(7a)を樹脂封止体(6)内に分布せるとよい。 Therefore, substantially upper portion (8, 9) to the fluorescent substance (7a) resin sealing body of the phosphor (7a) The wiring conductor forming the tip portion of the lead frame (2, 3) as shown in FIG. 1 (6) may distributed to within. 図1に示す構造でも発光ダイオードチップ(1)の周囲に分布する蛍光体(7a)の濃度は極めて薄く、また上端部(8、9)より下方の樹脂封止体(6)に含まれる不要な蛍光体(7a)は殆どないため、発光ダイオードチップ(1)の発熱による蛍光体(7a)の温度消光がなく、蛍光体(7a)の使用量が少ない本発明の利点は失われない。 Concentration of the phosphor (7a) distributed around the light emitting diode chip (1) in the structure shown in FIG. 1 is very thin, also required to be contained in the resin sealing body below the upper end (8, 9) (6) since phosphor (7a) there is little, the light emitting diode chip (1) without thermal quenching of the phosphor (7a) by heat generation of, is not lost advantages of the present invention utilize less phosphor (7a).

【0027】製造の際に、YAG蛍光体(7a)を適量均一に混合した液状エポキシ樹脂(12)を成形型(1 [0027] During manufacture, YAG phosphor (7a) an appropriate amount uniformly mixed liquid epoxy resin (12) the mold (1
0)のキャビティ(11)内に注入した後、発光ダイオードチップ(1)及びボンディングワイヤ(4、5)を取付けたリードフレームを倒立させてキャビティ(1 After injecting into the cavity of 0) (11), the light emitting diode chip (1) and the bonding wire (4, 5) by an inverted lead frame fitted with cavities (1
1)内に挿入して、図3に示すように所定の位置にリードフレームを保持する。 Insert 1) inside, to hold the lead frame in position as shown in FIG. YAG蛍光体(7a)の密度は約4.5g/cm 3で、金属、例えば銀の密度10.5g A density of about 4.5 g / cm 3 of the YAG phosphor (7a), a metal, such as silver density 10.5g
/cm 3より小さいが、水の密度約1g/cm 3 、石英ガラスの密度約2.2g/cm 3及びエポキシ樹脂の密度約1.1〜1.4g/cm 3より大きい。 / Cm 3 less than the density of water about 1 g / cm 3, a density greater than about 1.1~1.4G / cm 3 of density of about 2.2 g / cm 3 and an epoxy resin of the quartz glass. 一般に樹脂封止体(6)に用いる液状エポキシ樹脂(12)は、当初室温では比較的高粘度であるが、樹脂(12)を硬化させるために昇温すると樹脂分子の運動が活発化して一旦粘度が大きく低下する。 In general liquid epoxy resin used for the resin sealing body (6) (12) is initially at room temperature is relatively high viscosity, once the movement of resin molecules when heated to cure the resin (12) is intensified viscosity decreases significantly. その後硬化剤の働きで樹脂分子間結合が次第に促進され、最終的に全体が結合して硬化に至る性質を示す。 Subsequently curing agent work in promoting between resin molecular bonds gradually the exhibits properties that lead to final curing entirely bonded to. 従って、図3の状態で所定の温度プログラムに従ってエポキシ樹脂(12)を加熱・昇温すると、エポキシ樹脂(12)の粘度の低下時に密度の大きい重いYAG蛍光体(7a)の粒子が沈降して、図4に示すように樹脂(12)の先端部に蛍光体(7a)が集中する分布状態になって、エポキシ樹脂(12)が硬化する。 Therefore, when heat and raise the temperature of the epoxy resin (12) in accordance with a predetermined temperature program in the state of FIG. 3, the particles of the large heavy YAG phosphor density upon reduction in viscosity of the epoxy resin (12) (7a) is precipitated , so the distribution state of the phosphor (7a) is concentrated on the tip portion of the resin (12) as shown in FIG. 4, an epoxy resin (12) is cured.

【0028】図1に示すように、配線導体(2、3)の上端部(8、9)の周辺まで蛍光体(7a)が分布する構造、図2に示すように樹脂封止体(6)の最先端部周辺のみに蛍光体(7a)が分布する構造又はこれらの中間的な構造とするかは、蛍光体(7a)の結晶粉末の粒径、樹脂封止体(6)の初期粘度と加熱時の粘度、樹脂硬化時の昇温プログラム、樹脂硬化時間等を適当に選択して、自由に調整することが可能である。 As shown in FIG. 1, structure phosphors (7a) are distributed to the periphery of the upper end (8, 9) of the wiring conductor (2, 3), the resin sealing body as shown in FIG. 2 (6 forefront portion around only phosphor) (7a) structure distributed or whether these intermediate structure, the particle size of the crystal powder of the phosphor (7a), the initial resin sealing body (6) viscosity during heating and viscosity, Atsushi Nobori program during resin curing, the resin curing time, etc. selected appropriately, it is possible to adjust freely.

【0029】 [0029]

【発明の効果】前記のように、本発明の半導体発光装置では、発光ダイオードチップの発光を樹脂封止体の先端部に集中して分布する蛍光体で所望の光波長に変換し樹脂封止体を通して外部に放出することができると共に、 [Effect of the Invention] As described above, in the semiconductor light-emitting device of the present invention, light emitting diodes emitting chip into a desired optical wavelength in the phosphor distribution is concentrated on the tip portion of the resin sealing body resin sealing together can be released to the outside through the body,
下記の効果が得られる。 The following effects can be obtained. 1 使用する蛍光体の総量を減少することができる。 It is possible to reduce the amount of the phosphor 1 used. 2 発光ダイオードチップの発熱による蛍光体の温度消光の恐れがない。 There is no possibility of thermal quenching of the phosphor due to heat generation of the second light emitting diode chip. 3 樹脂充填機のシリンジで発光ダイオードチップ及びボンディングワイヤを損傷し又は断線・短絡・変形の危険がない。 There is no risk of the light emitting diode to damage the chip and the bonding wire or disconnection and short-modified syringe 3 resin filling machine. 4 蛍光体による発光波長変換機能を有しつつも信頼性が高く高効率で安価な半導体発光装置を得ることができる。 While having an emission wavelength converting function by 4 phosphors can be obtained an inexpensive semiconductor light-emitting device with high efficiency reliability.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明による発光ダイオード装置の断面図 Cross-sectional view of a light emitting diode device according to the invention; FIG

【図2】 本発明による他の実施の形態を示す発光ダイオード装置の断面図 Cross-sectional view of a light emitting diode device showing another embodiment according to the invention, FIG

【図3】 本発明により発光ダイオード装置を製造する成形型の断面図 Sectional view of a mold for manufacturing the light-emitting diode device by the present invention; FIG

【図4】 蛍光体が沈降した状態を示す成形型の断面図 4 is a cross-sectional view of a mold showing the state in which the phosphor is precipitated

【図5】 本発明による他の実施の形態を示す成形型の断面図 Sectional view of a mold showing another embodiment according to the present invention; FIG

【図6】 図5の成形型のキャビティを樹脂により充填した状態を示す断面図 6 is a sectional view showing a state filled with the cavity of the mold by the resin of Fig. 5

【図7】 従来の発光ダイオード装置の断面図 7 is a cross-sectional view of a conventional light emitting diode device

【図8】 従来の他の発光ダイオード装置の断面図 Figure 8 is a cross-sectional view of another conventional light emitting diode device

【符号の説明】 (1)・・発光ダイオードチップ(半導体発光素子)、 DESCRIPTION OF REFERENCE NUMERALS (1) ... light-emitting diode chip (semiconductor light emitting element),
(1a、1b)・・電極、 (2、3)・・配線導体、 (4、5)・・ボンディングワイヤ、 (6)・ (1a, 1b) ... electrode, (2,3) ... wiring conductors, (4,5) ... bonding wire (6)
・樹脂封止体、 (6a)・・樹脂本体、 (6b)・ · Resin sealing body, (6a) ·· resin body, (6b) ·
・発光部、 (12)・・樹脂、 (7a)・・蛍光体、(10)・・成形型、 (11)・・キャビティ、 - light-emitting part, (12) ... resin, (7a) ... phosphor, (10) ... mold, (11) ... cavity,

───────────────────────────────────────────────────── ────────────────────────────────────────────────── ───

【手続補正書】 [Procedure amendment]

【提出日】平成11年10月28日(1999.10. [Filing date] 1999 October 28 (1999.10.
28) 28)

【手続補正1】 [Amendment 1]

【補正対象書類名】明細書 [Correction target document name] specification

【補正対象項目名】0020 [Correction target item name] 0020

【補正方法】変更 [Correction method] change

【補正内容】 [Correction contents]

【0020】また、本発明の半導体発光装置には、市販の蛍光顔料又は蛍光染料を使用することができるが、一般に図3及び図4に示すように沈降によって樹脂封止体(6)の先端部に集中的に蛍光顔料又は蛍光染料を分布させることは難しい。 Further, in the semiconductor light-emitting device of the present invention may be a commercially available fluorescent pigments or fluorescent dyes, the tip of the general resin sealing body by precipitation as shown in FIG. 3 and FIG. 4 (6) intensively be distributed fluorescent pigment or fluorescent dye to parts are difficult. このため、図5及び図6に示すように、発光ダイオードチップ(1)より下側となるように樹脂封止体(6)の発光部(6b)を形成するための液状エポキシ樹脂である樹脂(12)を成形型(10) Therefore, as shown in FIGS. 5 and 6, a liquid epoxy resin for forming the light emitting portion (6b) of the light emitting diode resin sealing body such that the lower side of the chip (1) (6) Resin (12) a mold (10)
のキャビティ(11)内に充填する。 Filled into the cavity (11). 液状エポキシ樹脂である樹脂(12)内には蛍光体(7a)として蛍光顔料又は蛍光染料が適量混合されている。 The the resin (12) is a liquid epoxy resin fluorescent pigment or fluorescent dye is mixed with an appropriate amount as phosphor (7a). 次に、発光ダイオードチップ(1)を含むリードフレーム組立体の端部を成形型(10)のキャビティ(11)内に配置した後、蛍光顔料、蛍光染料を混合しない液状エポキシ樹脂である樹脂(13)を樹脂(12)の上に注入し、適当な温度プログラムに従って加熱硬化させると、樹脂封止体(6)の先端部に蛍光体(7a)が集中して分布する所期の構造が得られる。 Then, after arranging the light emitting diode chip (1) mold the ends of the lead frame assembly comprising (10) of the cavity (11) inside, a fluorescent pigment, a resin is a liquid epoxy resin not mixed with fluorescent dyes ( 13) was injected onto the resin (12), when cured by heating according to the appropriate temperature program, is expected structure phosphor tip of the resin sealing body (6) (7a) are distributed in a concentrated can get.

【手続補正2】 [Amendment 2]

【補正対象書類名】明細書 [Correction target document name] specification

【補正対象項目名】0027 [Correction target item name] 0027

【補正方法】変更 [Correction method] change

【補正内容】 [Correction contents]

【0027】製造の際に、YAG蛍光体(7a)を適量均一に混合した液状エポキシ樹脂である樹脂(12)を成形型(10)のキャビティ(11)内に注入した後、 [0027] During manufacture, after injection into the cavity (11) of the YAG phosphor appropriate amount of (7a) uniformly mixed liquid epoxy resin is a resin (12) a mold (10),
発光ダイオードチップ(1)及びボンディングワイヤ(4、5)を取り付けたリードフレームを倒立させてキャビティ(11)内に挿入して、図3に示すように所定の位置にリードフレームを保持する。 And inserted into the light-emitting diode chip (1) and the bonding wires (4,5) is inverted lead frame with attached to the cavity (11), holding the lead frame in position as shown in FIG. YAG蛍光体(7 YAG phosphor (7
a)の密度は約4.5g/cm 3で、金属、例えば銀の密度10.5g/cm 3より小さいが、水の密度約1g/c a density of about 4.5 g / cm 3 of a), a metal, such as silver density of less than 10.5 g / cm 3 is the density of water about 1 g / c
3 、石英ガラスの密度約2.2g/cm 3及びエポキシ樹脂の密度約1.1〜1.4g/cm 3より大きい。 m 3, density greater than about 1.1~1.4g / cm 3 of density of about 2.2 g / cm 3 and an epoxy resin of the quartz glass. 一般に樹脂封止体(6)に用いる液状エポキシ樹脂である樹脂(12)は、当初室温では比較的高粘度であるが、樹脂(12)を硬化させるために昇温すると樹脂分子の運動が活発化して一旦粘度が大きく低下する。 Generally the resin (12) is a liquid epoxy resin used for the resin sealing body (6) include, but are initially at room temperature is relatively high viscosity, vigorous movement of the resin molecules when heated to cure the resin (12) It turned into once the viscosity is greatly reduced. その後硬化剤の働きで樹脂分子間結合が次第に促進され、最終的に全体が結合して硬化に至る性質を示す。 Subsequently curing agent work in promoting between resin molecular bonds gradually the exhibits properties that lead to final curing entirely bonded to. 従って、図3の状態で所定の温度プログラムに従ってエポキシ樹脂である樹脂(12)を加熱・昇温すると、エポキシ樹脂である樹脂(12)の粘度の低下時に密度の大きい重いYA Therefore, when heat and raise the temperature of the resin (12) is an epoxy resin in accordance with a predetermined temperature program in the state of FIG. 3, heavy density greater during lowering of the viscosity of the resin (12) is an epoxy resin YA
G蛍光体(7a)の粒子が沈降して、図4に示すように樹脂(12)の先端部に蛍光体(7a)が集中する分布状態になって、エポキシ樹脂である樹脂(12)が硬化する。 Settled particles of the G phosphor (7a), so the distribution of the phosphor in the distal end portion of the resin (12) (7a) is concentrated as shown in FIG. 4, the resin is an epoxy resin (12) hardening.

【手続補正3】 [Amendment 3]

【補正対象書類名】図面 [Correction target document name] drawings

【補正対象項目名】全図 [Correction target item name] all the drawings

【補正方法】変更 [Correction method] change

【補正内容】 [Correction contents]

【図1】 [Figure 1]

【図2】 [Figure 2]

【図3】 [Figure 3]

【図4】 [Figure 4]

【図5】 [Figure 5]

【図6】 [Figure 6]

【図7】 [7]

【図8】 [Figure 8]

Claims (6)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 一対の配線導体(2、3)と、該一対の配線導体(2、3)の一方の端部に載置された半導体発光素子(1)と、該半導体発光素子(1)の一方の主面に形成された電極(1a、1b)と前記一対の配線導体(2、3)の少なくとも一方との間を電気的に接続するボンディングワイヤ(4、5)と、前記半導体発光素子(1)、ボンディングワイヤ(4、5)及び配線導体(2、3)の一方の端部を被覆する光透過性の樹脂封止体(6)とを備え、前記樹脂封止体(6)は前記半導体発光素子(1)を被覆すると共に一方の端部から前記一対の配線導体(2、3)の他方の端部が導出された樹脂本体(6a)と、該樹脂本体(6a)の他方の端部に一体に形成され且つ前記半導体発光素子(1)からの光を外部に放出する発光部 And 1. A pair of wiring conductors (2, 3), and the pair of wiring conductors (2, 3) at one end on the mounting semiconductor light-emitting device (1), the semiconductor light emitting element (1 ) and one main surface which is formed on the electrode of (1a, the bonding wire (4, 5 for electrically connecting between at least one of 1b) and the pair of the wiring conductor (2, 3)), the semiconductor the light-emitting element (1), and a light transparent resin sealing body covering (6) one end of a bonding wire (4, 5) and wiring conductors (2, 3), the resin sealing body ( 6) and the semiconductor light emitting element (1) the pair of the other resin body whose ends are derived of the wiring conductor (2, 3) from one end while covering (6a), the resin body (6a emitting unit that emits light to the outside from the other are formed integrally with the end portion and the semiconductor light emitting element (1)) (6b)とを備えた半導体発光装置において、 前記樹脂封止体(6)のうち前記発光部(6b)に蛍光体(7a)が選択的に混入され、 前記蛍光体(7a)は、前記半導体発光素子(1)から照射される光を吸収して他の異なる発光波長の光を放出することを特徴とする半導体発光装置。 In the semiconductor light-emitting device having a (6b) and the phosphor to the light emitting portion of the resin sealing body (6) (6b) (7a) is selectively is mixed, the phosphor (7a), the by absorbing light emitted from the semiconductor light emitting element (1) a semiconductor light emitting device characterized by emitting light of other different emission wavelengths.
  2. 【請求項2】 前記樹脂封止体(6)の樹脂本体(6 2. A resin body of the resin sealing body (6) (6
    a)は円筒状に形成され、前記発光部(6b)は半球状に形成された請求項1に記載の半導体発光装置。 a) has a cylindrical shape, said light emitting portion (6b) is a semiconductor light emitting device according to claim 1 which is formed in a hemispherical shape.
  3. 【請求項3】 一対の配線導体(2、3)と、該一対の配線導体(2、3)の一方の端部に載置された半導体発光素子(1)と、該半導体発光素子(1)の一方の主面に形成された電極(1a、1b)と前記一対の配線導体(2、3)の少なくとも一方との間を電気的に接続するボンディングワイヤ(4、5)とを備えたリードフレーム組立体を準備する工程と、 前記半導体発光素子(1)を含む前記リードフレーム組立体の一方の端部を成形型(10)のキャビティ(1 And wherein a pair of wiring conductors (2, 3), and the pair of wiring conductors (2, 3) at one end on the mounting semiconductor light-emitting device (1), the semiconductor light emitting element (1 one main surface electrodes formed (1a) of, and a bonding wire for electrically connecting (4,5) between at least one of 1b) and the pair of the wiring conductor (2, 3) a step of preparing a lead frame assembly, wherein the semiconductor cavity of the light-emitting element forming die one end of the lead frame assembly including (1) (10) (1
    1)内に配置する前又は後に蛍光体(7a)を含む流動化した光透過性の樹脂(12)を前記成形型(10)のキャビティ(11)内に充填する工程と、 前記半導体発光素子(1)よりも前記配線導体(2、 And filling phosphors (fluidized light transmitting resin including 7a) (12) in the cavity (11) of said mold (10) before or after placing in 1), the semiconductor light emitting element (1) said wiring conductors than (2,
    3)の他方の端部から離間した位置に前記蛍光体(7 The phosphor at a position spaced apart from the other end of 3) (7
    a)を前記樹脂(12)内で移動させる工程と、 前記キャビティ(11)内で前記樹脂(12)を硬化させて、樹脂封止体(6)を形成した後、前記リードフレーム組立体を前記成形型(10)から取り出す工程とを含むことを特徴とする半導体発光装置の製造方法。 A step of moving a) within said resin (12), said inside cavity (11) curing the resin (12), after forming a resin sealing body (6), the lead frame assembly the method of manufacturing a semiconductor light emitting device which comprises a step of removing from said mold (10).
  4. 【請求項4】 前記樹脂(12)より大きな比重を有する前記蛍光体(7a)を前記樹脂(12)内で自重により沈降させて前記蛍光体(7a)を前記樹脂(12)内で移動させる工程を含む請求項3に記載の半導体発光装置の製造方法。 4. A moving in said resin said phosphor having a larger specific gravity than (12) said phosphor (7a) allowed to settle by gravity within said resin (12) (7a) of the resin (12) the method of manufacturing a semiconductor light emitting device according to claim 3 including the step.
  5. 【請求項5】 前記成形型(10)を回転させて前記半導体発光素子(1)よりも前記配線導体(2、3)の他方の端部から離間した位置に前記蛍光体(7a)を前記樹脂(12)内で移動させる工程を含む請求項3に記載の半導体発光装置の製造方法。 Wherein said the phosphor at a position spaced apart from the other end of said mold (10) is rotated the semiconductor light emitting element (1) said wiring conductors than (2,3) (7a) the method of manufacturing a semiconductor light emitting device according to claim 3 including the step of moving in a resin (12).
  6. 【請求項6】 一対の配線導体(2、3)と、該一対の配線導体(2、3)の一方の端部に載置された半導体発光素子(1)と、該半導体発光素子(1)の一方の主面に形成された電極(1a、1b)と前記一対の配線導体(2、3)の少なくとも一方との間を電気的に接続するボンディングワイヤ(4、5)とを備えたリードフレーム組立体を準備する工程と、 前記半導体発光素子(1)を含む前記リードフレーム組立体の一方の端部を成形型(10)のキャビティ(1 And wherein a pair of wiring conductors (2, 3), and the pair of wiring conductors (2, 3) at one end on the mounting semiconductor light-emitting device (1), the semiconductor light emitting element (1 one main surface electrodes formed (1a) of, and a bonding wire for electrically connecting (4,5) between at least one of 1b) and the pair of the wiring conductor (2, 3) a step of preparing a lead frame assembly, wherein the semiconductor cavity of the light-emitting element forming die one end of the lead frame assembly including (1) (10) (1
    1)内に配置する前又は後に前記半導体発光素子(1) The semiconductor light emitting device before or after placing 1) in (1)
    よりも前記配線導体(2、3)の他方の端部から離間した位置まで蛍光体(7a)を混入した光透過性の樹脂(12)を前記成形型(10)のキャビティ(11)内に充填する工程と、 前記キャビティ(11)の残部に蛍光体(7a)を混入しない樹脂(13)を充填して前記半導体発光素子(1)を被覆する工程と、 前記キャビティ(11)内で前記樹脂(12、13)を硬化させて、樹脂封止体(6)を形成した後、前記リードフレーム組立体を前記成形型(10)から取り出す工程とを含むことを特徴とする半導体発光装置の製造方法。 Said wiring conductor (2, 3) the other of the phosphor from the edge to a position away (7a) the mold contaminating light transparent resin (12) to (10) of the cavity (11) than a step of filling, a step of covering said semiconductor light emitting element (1) by filling the phosphor to the remainder of the resin not mixed with (7a) (13) of the cavity (11), wherein in said cavity (11) curing the resin (12, 13), after forming a resin sealing body (6), the semiconductor light-emitting device which comprises a step of taking out the lead frame assembly wherein the mold (10) Production method.
JP21103398A 1998-07-27 1998-07-27 The method of manufacturing a semiconductor light emitting device Expired - Fee Related JP3584163B2 (en)

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US7259396B2 (en) 2000-12-28 2007-08-21 Toyoda Gosei Co., Ltd. Light source with a light-emitting element
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US7157746B2 (en) 2000-12-28 2007-01-02 Toyoda Gosei Co., Ltd. Light emitting device having a divalent-europium-activated alkaline earth metal orthosilicate phosphor
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JP2006049735A (en) * 2004-08-09 2006-02-16 Stanley Electric Co Ltd Led and its manufacturing method
US7910940B2 (en) 2005-08-05 2011-03-22 Panasonic Corporation Semiconductor light-emitting device
JP2007194525A (en) * 2006-01-23 2007-08-02 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
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