JP2000049389A - Semiconductor light emitting device and manufacture thereof - Google Patents
Semiconductor light emitting device and manufacture thereofInfo
- Publication number
- JP2000049389A JP2000049389A JP10211033A JP21103398A JP2000049389A JP 2000049389 A JP2000049389 A JP 2000049389A JP 10211033 A JP10211033 A JP 10211033A JP 21103398 A JP21103398 A JP 21103398A JP 2000049389 A JP2000049389 A JP 2000049389A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- resin
- semiconductor light
- phosphor
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体発光装置、
特に半導体発光素子から照射される光を波長変換して外
部に放出する半導体発光装置及びその製造方法に属す
る。The present invention relates to a semiconductor light emitting device,
Particularly, the present invention belongs to a semiconductor light emitting device that converts the wavelength of light emitted from a semiconductor light emitting element and emits the light to the outside, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】図７は発光ダイオードチップから照射さ
れる光の波長を蛍光体によって変換する従来の発光ダイ
オード装置の断面図を示す。従来の発光ダイオード装置
では、配線導体（２）のカップ部（２ａ）の底面（２
ｂ）に発光ダイオードチップ（１）が固着され、発光ダ
イオードチップ（１）のカソード電極及びアノード電極
は、それぞれボンディングワイヤ（４）及び（５）によ
り配線導体（２）の上端部（８）及び配線導体（３）の
上端部（９）に接続される。配線導体（２）及び（３）
は、例えばそれぞれカソード側及びアノード側のリード
として機能する。配線導体（２）の上部に形成されたカ
ップ部（２ａ）には発光ダイオードチップ（１）が固着
され、カップ部（２ａ）内には蛍光物質を混入した光透
過性の樹脂（７）が充填されるため、発光ダイオードチ
ップ（１）は樹脂（７）により被覆される。光透過性の
樹脂封止体（６）は、円筒状に形成された樹脂本体（６
ａ）と、樹脂本体（６ａ）と一体に半球状に形成された
レンズ部を有する発光部（６ｂ）とを備えている。な
お、実際の発光ダイオード装置では、樹脂本体（６ａ）
からも若干の光が放出されるが、本明細書では、便宜上
発光ダイオードチップ（１）の上方側の樹脂封止体
（６）を発光部（６ｂ）と称する。発光ダイオードチッ
プ（１）、カソード側の配線導体（２）のカップ部（２
ａ）及び上端部（８）、アノード側の配線導体（３）の
上端部（９）、ボンディングワイヤ（４、５）は樹脂封
止体（６）の樹脂本体（６ａ）内に封入される。2. Description of the Related Art FIG. 7 is a cross-sectional view of a conventional light emitting diode device for converting the wavelength of light emitted from a light emitting diode chip by a phosphor. In the conventional light emitting diode device, the bottom (2) of the cup (2a) of the wiring conductor (2) is
b) a light emitting diode chip (1) is fixed, and the cathode electrode and the anode electrode of the light emitting diode chip (1) are connected to the upper ends (8) and (8) of the wiring conductor (2) by bonding wires (4) and (5), respectively. It is connected to the upper end (9) of the wiring conductor (3). Wiring conductors (2) and (3)
Function as leads on the cathode side and the anode side, for example. A light emitting diode chip (1) is fixed to a cup (2a) formed above the wiring conductor (2), and a light transmissive resin (7) mixed with a fluorescent substance is contained in the cup (2a). To be filled, the light emitting diode chip (1) is covered with the resin (7). The light-transmitting resin sealing body (6) is a resin body (6) formed in a cylindrical shape.
a) and a light emitting portion (6b) having a lens portion formed in a hemispherical shape integrally with the resin body (6a). In an actual light emitting diode device, the resin body (6a)
However, in this specification, the resin sealing body (6) above the light emitting diode chip (1) is referred to as a light emitting part (6b) for convenience. The light-emitting diode chip (1) and the cup (2) of the cathode-side wiring conductor (2)
a), the upper end (8), the upper end (9) of the wiring conductor (3) on the anode side, and the bonding wires (4, 5) are sealed in the resin body (6a) of the resin sealing body (6). .
【０００３】発光ダイオード装置のカソード側の配線導
体（２）とアノード側の配線導体（３）との間に電圧を
印加し、発光ダイオードチップ（１）に通電すると、発
光ダイオードチップ（１）から照射される光は、樹脂
（７）内を通り配線導体（２）のカップ部（２ａ）の側
壁（２ｃ）で反射した後に、透明な樹脂封止体（６）を
通り発光ダイオード装置の外部に放出される。また、発
光ダイオードチップ（１）の上面から放射されてカップ
部（２ａ）の側壁（２ｃ）で反射されずに直接に樹脂
（７）及び樹脂封止体（６）を通って発光ダイオード装
置の外部に放出される光もある。樹脂封止体（６）の先
端にはレンズ状の発光部（６ｂ）が形成され、樹脂封止
体（６）内を通過する光は、レンズ状の発光部（６ｂ）
によって集光されて指向性が高められる。発光ダイオー
ドチップ（１）の発光時に、発光ダイオードチップ
（１）から照射される光は樹脂（７）内に混入された蛍
光物質によって異なる波長に変換されて放出される。こ
の結果、発光ダイオード装置からは発光ダイオードチッ
プ（１）から照射された光とは異なる波長の光も放出さ
れる。[0003] When a voltage is applied between the wiring conductor (2) on the cathode side and the wiring conductor (3) on the anode side of the light emitting diode device to energize the light emitting diode chip (1), the light emitting diode chip (1) is turned off. The irradiated light passes through the inside of the resin (7), is reflected on the side wall (2c) of the cup portion (2a) of the wiring conductor (2), and then passes through the transparent resin sealing body (6) to the outside of the light emitting diode device. Will be released. In addition, the light emitted from the upper surface of the light emitting diode chip (1) is not reflected by the side wall (2c) of the cup portion (2a) but directly passes through the resin (7) and the resin sealing body (6). Some light is emitted to the outside. A lens-shaped light emitting portion (6b) is formed at the tip of the resin sealing body (6), and light passing through the resin sealing body (6) is transmitted through the lens-shaped light emitting portion (6b).
And the directivity is enhanced. When the light emitting diode chip (1) emits light, light emitted from the light emitting diode chip (1) is converted into a different wavelength by a fluorescent substance mixed in the resin (7) and emitted. As a result, light having a wavelength different from the light emitted from the light emitting diode chip (1) is also emitted from the light emitting diode device.
【０００４】[0004]
【発明が解決しようとする課題】従来の発光ダイオード
装置を製造する際に、まず配線導体（２）のカップ部
（２ａ）に発光ダイオードチップ（１）を取付け、次に
発光ダイオードチップ（１）と配線導体（２、３）間に
ボンディングワイヤ（４、５）を取付け、その後カップ
部（２ａ）に樹脂（７）を注入する。樹脂（７）をカッ
プ部（２ａ）に注入するとき、樹脂充填装置のシリンジ
（syringe／スポイト）の先端をカップ部（２ａ）の上
部に近接させる。この場合、シリンジの先端が発光ダイ
オードチップ（１）及びボンディングワイヤ（５、６）
に接触することが多く、発光ダイオードチップ（１）及
びボンディングワイヤ（５、６）に接触すると、発光ダ
イオードチップ（１）を傷つけたり、ボンディングワイ
ヤ（５、６）を変形し又は断線若しくはフレームとの短
絡を生じさせる場合がある。特に金又はアルミニウム等
の軟質金属の細線で形成されるボンディングワイヤ
（５、６）は、小さな外力が加えられても変形又は断線
を生じやすい。In manufacturing a conventional light emitting diode device, first, a light emitting diode chip (1) is attached to a cup (2a) of a wiring conductor (2), and then the light emitting diode chip (1) is mounted. The bonding wires (4, 5) are attached between the wiring conductors (2, 3), and then the resin (7) is injected into the cup portion (2a). When injecting the resin (7) into the cup (2a), the tip of the syringe (syringe / dropper) of the resin filling device is brought close to the upper part of the cup (2a). In this case, the tip of the syringe is a light emitting diode chip (1) and bonding wires (5, 6).
Contact with the LED chip (1) and the bonding wire (5, 6), the LED chip (1) may be damaged, the bonding wire (5, 6) may be deformed, or the wire or the frame may be disconnected. May cause a short circuit. In particular, the bonding wires (5, 6) formed of fine wires of a soft metal such as gold or aluminum are liable to be deformed or broken even when a small external force is applied.
【０００５】ボンディングワイヤ（５、６）が断線又は
短絡した発光ダイオード装置は不良品となる結果、製造
歩留まりが低下する。また、外力が加えられたボンディ
ングワイヤ（５、６）は、断線又は短絡しなくても、発
光ダイオードチップ（１）のカソード電極若しくはアノ
ード電極又は配線導体（２、３）に対するボンディング
ワイヤ（５、６）の接続部分の接着力が低下することが
あり、信頼性の点で問題があった。A light emitting diode device in which the bonding wires (5, 6) are disconnected or short-circuited becomes a defective product, resulting in a reduced production yield. Further, the bonding wires (5, 6) to which the external force is applied can be bonded to the cathode electrode or the anode electrode of the light emitting diode chip (1) or the wiring conductors (2, 3) without disconnection or short circuit. In 6), the adhesive strength of the connection portion may be reduced, and there is a problem in reliability.
【０００６】一方従来の半導体発光装置では、カップ部
（２ａ）内だけに蛍光体（７ａ）を含む樹脂（７）を注
入するので、蛍光体（７ａ）の使用量は少ないが、カッ
プ部（２ａ）のない配線導体（２）を使用することがで
きない。また、発光ダイオードチップ（１）の周囲に集
中して蛍光体（７ａ）が分布されるので、発光ダイオー
ドチップ（１）が通電され発熱すると蛍光体（７ａ）の
種類によっては温度消光を起こして波長変換効率が低下
する問題があった。On the other hand, in the conventional semiconductor light emitting device, since the resin (7) containing the phosphor (7a) is injected only into the cup (2a), the amount of the phosphor (7a) used is small. The wiring conductor (2) without 2a) cannot be used. In addition, since the phosphor (7a) is concentrated around the light emitting diode chip (1), when the light emitting diode chip (1) is energized and generates heat, temperature quenching occurs depending on the type of the phosphor (7a). There was a problem that the wavelength conversion efficiency was reduced.
【０００７】このため、図８に示すように、予め全体に
蛍光体（７ａ）を含有させた樹脂封止体（６）中にリー
ドフレームを挿入して半導体発光装置を製造する方法も
提案されているが、この構造では、発光ダイオードチッ
プ（１）より下方まで蛍光体（７ａ）が樹脂封止体
（６）中に含有されるため、発光ダイオードチップ
（１）より下方の蛍光体（７ａ）には発光ダイオードチ
ップ（１）の光が当らず、波長変換に関与しないむだな
蛍光体（７ａ）が存在する。このため、高価な蛍光体
（７ａ）の使用量が必要以上に多くなって製品価格が高
くなる難点があった。For this reason, as shown in FIG. 8, there has been proposed a method of manufacturing a semiconductor light emitting device by inserting a lead frame into a resin sealing body (6) containing a phosphor (7a) in advance. However, in this structure, since the phosphor (7a) is contained in the resin sealing body (6) to a level below the light emitting diode chip (1), the phosphor (7a) below the light emitting diode chip (1) is included. In (2), there is a useless phosphor (7a) which is not irradiated with light from the light emitting diode chip (1) and is not involved in wavelength conversion. For this reason, there was a problem that the use amount of the expensive phosphor (7a) was increased more than necessary and the product price was increased.
【０００８】本発明は、半導体発光素子から発生する光
の波長変換を行なう蛍光体の総量を減少できる半導体発
光装置及びその製造方法を提供することを目的とする。
また、本発明は、半導体発光素子の発熱による蛍光体の
温度消光の恐れがない半導体発光装置及びその製造方法
を提供することを目的とする。本発明は、半導体発光素
子及びボンディングワイヤの損傷、断線、短絡又は変形
を発生しない半導体発光装置及びその製造方法を提供す
ることを目的とする。本発明は、蛍光体による発光波長
変換機能を有しつつも信頼性が高く高効率で安価な半導
体発光装置及びその製造方法を提供することを目的とす
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor light emitting device capable of reducing the total amount of phosphors for converting the wavelength of light generated from a semiconductor light emitting element, and a method of manufacturing the same.
It is another object of the present invention to provide a semiconductor light emitting device and a method of manufacturing the same, in which there is no risk of temperature quenching of the phosphor due to heat generated by the semiconductor light emitting element. An object of the present invention is to provide a semiconductor light emitting device that does not cause damage, disconnection, short circuit or deformation of a semiconductor light emitting element and a bonding wire, and a method of manufacturing the same. An object of the present invention is to provide a highly reliable, highly efficient, and inexpensive semiconductor light emitting device having a light emitting wavelength conversion function by a phosphor and a method of manufacturing the same.
【０００９】[0009]
【課題を解決するための手段】本発明の半導体発光装置
は、一対の配線導体（２、３）と、一対の配線導体
（２、３）の一方の端部に載置された半導体発光素子
（１）と、半導体発光素子（１）の一方の主面に形成さ
れた電極（１ａ、１ｂ）と一対の配線導体（２、３）の
少なくとも一方との間を電気的に接続するボンディング
ワイヤ（４、５）と、半導体発光素子（１）、ボンディ
ングワイヤ（４、５）及び配線導体（２、３）の一方の
端部を被覆する光透過性の樹脂封止体（６）とを備え、
樹脂封止体（６）は半導体発光素子（１）を被覆すると
共に一方の端部から一対の配線導体（２、３）の他方の
端部が導出された樹脂本体（６ａ）と、樹脂本体（６
ａ）の他方の端部に一体に形成され且つ半導体発光素子
（１）からの光を外部に放出する発光部（６ｂ）とを備
えている。この半導体発光装置では、樹脂封止体（６）
のうち発光部（６ｂ）に蛍光体（７ａ）が選択的に混入
され、蛍光体（７ａ）は、半導体発光素子（１）から照
射される光を吸収して他の異なる発光波長の光を放出す
る。A semiconductor light emitting device according to the present invention comprises a pair of wiring conductors (2, 3) and a semiconductor light emitting element mounted on one end of the pair of wiring conductors (2, 3). (1) a bonding wire for electrically connecting between the electrodes (1a, 1b) formed on one main surface of the semiconductor light emitting element (1) and at least one of the pair of wiring conductors (2, 3); (4, 5) and a light transmissive resin sealing body (6) covering one end of the semiconductor light emitting element (1), the bonding wires (4, 5) and the wiring conductors (2, 3). Prepared,
A resin body (6a) covering the semiconductor light emitting element (1) and having the other end of the pair of wiring conductors (2, 3) led out from one end; (6
a) a light-emitting portion (6b) integrally formed at the other end of the light-emitting device and emitting light from the semiconductor light-emitting element (1) to the outside. In this semiconductor light emitting device, the resin sealing body (6)
The phosphor (7a) is selectively mixed into the light emitting portion (6b), and the phosphor (7a) absorbs light emitted from the semiconductor light emitting element (1) and emits light of another different emission wavelength. discharge.
【００１０】本発明によれば、半導体発光素子（１）よ
り外側で樹脂封止体（６）の発光部（６ｂ）側に蛍光体
（７ａ）が樹脂封止体（６）内に配合されるため、樹脂
封止体（６）の先端部に集中して蛍光体（７ａ）が分布
する。このため、有効に使用する蛍光体（７ａ）の総量
を減少することができ、半導体発光素子（１）の発熱に
よる蛍光体（７ａ）の温度消光の恐れもない。また樹脂
充填機のシリンジで半導体発光素子（１）及びワイヤを
損傷し又は断線・短絡・変形の危険がない。本発明の半
導体発光装置では、半導体発光素子（１）の発光を樹脂
封止体（６）先端部に集中して分布する蛍光体（７ａ）
で所望の光波長に変換し樹脂封止体（６）を通して外部
に放出することができる。According to the present invention, the phosphor (7a) is compounded in the resin sealing body (6) on the light emitting portion (6b) side of the resin sealing body (6) outside the semiconductor light emitting element (1). Therefore, the phosphor (7a) is concentrated on the tip of the resin sealing body (6). For this reason, the total amount of the phosphor (7a) to be used effectively can be reduced, and there is no possibility of the temperature quenching of the phosphor (7a) due to heat generation of the semiconductor light emitting element (1). Further, there is no danger of damaging the semiconductor light emitting element (1) and the wire or disconnection / short circuit / deformation by the syringe of the resin filling machine. In the semiconductor light emitting device of the present invention, the phosphor (7a) that distributes the light emitted from the semiconductor light emitting element (1) in a concentrated manner at the tip of the resin sealing body (6).
Thus, the light can be converted to a desired light wavelength and emitted to the outside through the resin sealing body (6).
【００１１】本発明の実施の形態では、樹脂封止体
（６）の樹脂本体（６ａ）は円筒状に形成され、発光部
（６ｂ）は半球状に形成される。In the embodiment of the present invention, the resin body (6a) of the resin sealing body (6) is formed in a cylindrical shape, and the light emitting portion (6b) is formed in a hemispherical shape.
【００１２】本発明による半導体発光装置の製造方法
は、一対の配線導体（２、３）と、一対の配線導体
（２、３）の一方の端部に載置された半導体発光素子
（１）と、半導体発光素子（１）の一方の主面に形成さ
れた電極（１ａ、１ｂ）と一対の配線導体（２、３）の
少なくとも一方との間を電気的に接続するボンディング
ワイヤ（４、５）とを備えたリードフレーム組立体を準
備する工程と、半導体発光素子（１）を含むリードフレ
ーム組立体の一方の端部を成形型（１０）のキャビティ
（１１）内に配置する前又は後に蛍光体（７ａ）を含む
流動化した光透過性の樹脂（１２）を成形型（１０）の
キャビティ（１１）内に充填する工程と、半導体発光素
子チップ（１）よりも配線導体（２、３）の他方の端部
から離間した位置に蛍光体（７ａ）を樹脂（１２）内で
移動させる工程と、キャビティ（１１）内で樹脂（１
２）を硬化させて、樹脂封止体（６）を形成した後、リ
ードフレーム組立体を成形型（１０）から取り出す工程
とを含む。A method for manufacturing a semiconductor light-emitting device according to the present invention comprises a pair of wiring conductors (2, 3) and a semiconductor light-emitting element (1) mounted on one end of the pair of wiring conductors (2, 3). And bonding wires (4, 4) for electrically connecting electrodes (1a, 1b) formed on one main surface of the semiconductor light emitting element (1) and at least one of the pair of wiring conductors (2, 3). 5) preparing a lead frame assembly comprising: (a) before placing one end of the lead frame assembly including the semiconductor light emitting element (1) in the cavity (11) of the mold (10) or A step of subsequently filling the cavity (11) of the mold (10) with the fluidized light-transmitting resin (12) containing the phosphor (7a), and a step of filling the wiring conductor (2) more than the semiconductor light emitting element chip (1). 3) the phosphor at a position away from the other end The 7a) a step of moving within the resin (12), the resin in the cavity (11) (1
Curing the 2) to form the resin sealing body (6), and then removing the lead frame assembly from the mold (10).
【００１３】本発明の実施の形態では、樹脂（１２）よ
り大きな比重を有する蛍光体（７ａ）を樹脂（１２）内
で自重により沈降させて蛍光体（７ａ）を樹脂（１２）
内で移動させる工程又は成形型（１０）を回転させて半
導体発光素子（１）よりも配線導体（２、３）の他方の
端部から離間した位置に蛍光体（７ａ）を樹脂（１２）
内で移動させる工程を含んでもよい。樹脂封止体（６）
を硬化させる加熱過程で樹脂（１２）の粘度が一旦低下
するため、蛍光体（７ａ）が大きな比重によって沈降
し、蛍光体（７ａ）は樹脂封止体（６）の先端部に集中
して分布される。また、樹脂封止体（６）を硬化させる
加熱過程で遠心注型により成形型（１０）を回転させる
と、比重の大きな蛍光体（７ａ）は径方向外側に移動
し、蛍光体（７ａ）は樹脂封止体（６）の先端部に集中
して分布される。In the embodiment of the present invention, the phosphor (7a) having a specific gravity larger than that of the resin (12) is settled by its own weight in the resin (12), so that the phosphor (7a) is settled by the resin (12).
The phosphor (7a) is moved away from the other end of the wiring conductor (2, 3) from the semiconductor light emitting element (1) by rotating the molding die (10) or the resin (12).
May be included. Resin sealing body (6)
Since the viscosity of the resin (12) temporarily decreases during the heating process of curing the resin, the phosphor (7a) settles due to a large specific gravity, and the phosphor (7a) concentrates on the tip of the resin sealing body (6). Distributed. Further, when the molding die (10) is rotated by centrifugal casting in a heating process of curing the resin sealing body (6), the phosphor (7a) having a large specific gravity moves radially outward, and the phosphor (7a) Are concentrated and distributed at the tip of the resin sealing body (6).
【００１４】また、本発明の実施の形態では、半導体発
光素子（１）を含むリードフレーム組立体の一方の端部
を成形型（１０）のキャビティ（１１）内に配置した
後、半導体発光素子（１）よりも前記配線導体（２、
３）の他方の端部から離間した位置まで蛍光体（７ａ）
を混入した光透過性の樹脂（１２）を成形型（１０）の
キャビティ（１１）内に充填する工程と、キャビティ
（１１）の残部に蛍光体（７ａ）を混入しない樹脂（１
２）を充填して半導体発光素子（１）を被覆する工程
と、キャビティ（１１）内で樹脂（１２）を硬化させ
て、樹脂封止体（６）を形成した後、リードフレーム組
立体を成形型（１０）から取り出す工程とを含む。始め
に蛍光体（７ａ）が含まれた樹脂（１２）を注型し、そ
の後に蛍光体（７ａ）が混入されない樹脂（１３）を注
型することにより、樹脂封止体（６）の先端部に蛍光体
（７ａ）が集中して分布される。半導体発光素子（１）
は蛍光体（７ａ）を混入しない樹脂（１３）により被覆
され、キャビティ（１１）内で樹脂（１２、１３）を硬
化させて、樹脂封止体（６）を形成した後、リードフレ
ーム組立体を成形型（１０）から取り出すことができ
る。Further, according to the embodiment of the present invention, after one end of a lead frame assembly including a semiconductor light emitting device (1) is disposed in a cavity (11) of a molding die (10), the semiconductor light emitting device is disposed. The wiring conductors (2,
3) the phosphor (7a) up to a position separated from the other end of the phosphor (7a)
Filling the cavity (11) of the mold (10) with the light-transmitting resin (12) containing the resin, and the resin (1) not containing the phosphor (7a) in the remainder of the cavity (11).
2) filling the semiconductor light emitting element (1) by filling it, and curing the resin (12) in the cavity (11) to form a resin sealing body (6). Removing from the mold (10). First, the resin (12) containing the phosphor (7a) is cast, and then the resin (13) into which the phosphor (7a) is not mixed is cast, whereby the tip of the resin sealing body (6) is formed. The phosphor (7a) is concentrated and distributed in the portion. Semiconductor light emitting device (1)
Is coated with a resin (13) in which the phosphor (7a) is not mixed, and the resin (12, 13) is cured in the cavity (11) to form a resin sealing body (6). Can be taken out of the mold (10).
【００１５】[0015]
【発明の実施の形態】以下、発光ダイオード装置に適用
した本発明による半導体発光装置の実施の形態を図１〜
図６について説明する。図１〜図６では、図７及び図８
に示す箇所と同一の部分には同一の符号を付し、説明を
省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor light emitting device according to the present invention applied to a light emitting diode device is shown in FIGS.
Referring to FIG. 1 to 6, FIGS. 7 and 8
The same parts as those shown in FIG.
【００１６】半導体発光装置の半導体発光素子として図
１に示す発光ダイオードチップ（１）より外側で樹脂封
止体（６）の発光部（６ｂ）側に蛍光体（７ａ）が樹脂
封止体（６）内に配合される。蛍光体（７ａ）は、樹脂
封止体（６）の長さ方向の中央部より発光部（６ｂ）側
に配合される。この場合、図２に示すように、半球状の
発光部（６ｂ）内にのみ蛍光体（７ａ）を配合してもよ
い。蛍光体（７ａ）の密度は樹脂封止体（６）の密度よ
り大きい。蛍光体（７ａ）は、発光ダイオードチップ
（１）から照射される光の一部を吸収して他の異なる発
光波長に変換する。As a semiconductor light emitting element of the semiconductor light emitting device, a phosphor (7a) is provided on the light emitting portion (6b) side of the resin sealing body (6) outside the light emitting diode chip (1) shown in FIG. It is blended in 6). The phosphor (7a) is compounded on the light emitting portion (6b) side from the center in the length direction of the resin sealing body (6). In this case, as shown in FIG. 2, the phosphor (7a) may be blended only in the hemispherical light emitting portion (6b). The density of the phosphor (7a) is higher than the density of the resin sealing body (6). The phosphor (7a) absorbs a part of the light emitted from the light emitting diode chip (1) and converts it to another different emission wavelength.
【００１７】発光ダイオードチップ（１）より外側、即
ち発光ダイオードチップ（１）の上面よりも樹脂封止体
（６）の発光部（６ｂ）側に蛍光体（７ａ）が樹脂封止
体（６）内に配合されるため、樹脂封止体（６）の先端
部側に集中して蛍光体（７ａ）が分布する。このため、
蛍光体（７ａ）を波長変換に有効に機能させて蛍光体
（７ａ）の使用総量を減少することができる。また、発
光ダイオードチップ（１）の周囲に存在する蛍光体（７
ａ）の分布が少ないため、発光ダイオードチップ（１）
が発熱しても蛍光体（７ａ）の温度上昇を招かず、蛍光
体（７ａ）の温度消光による波長変換効率の低下を来さ
ない。また樹脂充填装置のシリンジで発光ダイオードチ
ップ（１）及びワイヤを損傷し又は断線・短絡・変形す
る危険がない。本発明の半導体発光装置では、発光ダイ
オードチップ（１）から放出された光を樹脂封止体
（６）の先端部に集中して分布する蛍光体（７ａ）で所
望の発光波長に変換し樹脂封止体（６）の外部に放出す
ることができる。また、発光ダイオードチップ（１）か
ら放出された光のうちの一部は蛍光体（７ａ）で波長変
換されずに樹脂封止体（６）の外部に放出される。従っ
て、樹脂封止体（６）の外部からは波長変換された光と
波長変換されない光とが混色した光が観察される。The phosphor (7a) is provided outside the light emitting diode chip (1), that is, on the light emitting portion (6b) side of the resin sealing body (6) from the upper surface of the light emitting diode chip (1). ), The phosphor (7a) is concentrated on the tip side of the resin sealing body (6). For this reason,
The phosphor (7a) can be effectively used for wavelength conversion to reduce the total amount of the phosphor (7a) used. In addition, the phosphor (7) existing around the light emitting diode chip (1)
Since the distribution of a) is small, the light emitting diode chip (1)
Even if heat is generated, the temperature of the phosphor (7a) does not rise, and the wavelength conversion efficiency does not decrease due to the temperature quenching of the phosphor (7a). Further, there is no danger that the light emitting diode chip (1) and the wire are damaged or disconnected, short-circuited or deformed by the syringe of the resin filling device. In the semiconductor light emitting device of the present invention, the light emitted from the light emitting diode chip (1) is converted into a desired emission wavelength by the phosphor (7a) which is concentrated and distributed at the tip of the resin sealing body (6). It can be released to the outside of the sealing body (6). In addition, a part of the light emitted from the light emitting diode chip (1) is emitted to the outside of the resin sealing body (6) without being wavelength-converted by the phosphor (7a). Therefore, from the outside of the resin sealing body (6), mixed light of wavelength-converted light and non-wavelength-converted light is observed.
【００１８】本発明による半導体発光装置を製造する際
に、まずリードフレーム組立体を準備する。図示しない
が、このリードフレーム組立体は、一対の配線導体
（２、３）と、一対の配線導体（２、３）の一方の端部
に接着された発光ダイオードチップ（１）と、発光ダイ
オードチップ（１）に形成された電極（１ａ、１ｂ）と
一対の配線導体（２、３）の他方の端部とを電気的に接
続するボンディングワイヤ（４、５）とを備えている。
次に、蛍光体（７ａ）を含む流動化した光透過性の樹脂
（１２）を成形型（１０）のキャビティ（１１）内に充
填する。その後、発光ダイオードチップ（１）を含むリ
ードフレーム組立体の端部を成形型（１０）のキャビテ
ィ（１１）内に配置した後、樹脂（１２）を加熱しなが
ら、樹脂（１２）からの配線導体（２、３）の導出方向
に対して反対側に且つ発光ダイオードチップ（１）より
外側に、即ち発光ダイオードチップ（１）よりも樹脂
（１２）の配線導体（２、３）が導出された端部から離
間した位置に蛍光体（７ａ）を樹脂（１２）内で移動さ
せる。When manufacturing a semiconductor light emitting device according to the present invention, first, a lead frame assembly is prepared. Although not shown, the lead frame assembly includes a pair of wiring conductors (2, 3), a light emitting diode chip (1) bonded to one end of the pair of wiring conductors (2, 3), and a light emitting diode. Bonding wires (4, 5) for electrically connecting the electrodes (1a, 1b) formed on the chip (1) and the other ends of the pair of wiring conductors (2, 3) are provided.
Next, a fluidized light-transmitting resin (12) containing the phosphor (7a) is filled in the cavity (11) of the mold (10). Then, after the end of the lead frame assembly including the light emitting diode chip (1) is disposed in the cavity (11) of the molding die (10), wiring from the resin (12) is performed while heating the resin (12). The wiring conductors (2, 3) of the resin (12) are led out on the opposite side to the lead-out direction of the conductors (2, 3) and outside the light emitting diode chip (1), that is, from the light emitting diode chip (1). The phosphor (7a) is moved in the resin (12) to a position separated from the end.
【００１９】樹脂封止体（６）からの配線導体（２、
３）の導出方向に対して反対側に且つ発光ダイオードチ
ップ（１）より外側に蛍光体（７ａ）を樹脂（１２）内
で移動させるとき、種々の方法がある。例えば、図３及
び図４に示すように、樹脂（１２）より大きな比重を有
する蛍光体（７ａ）を樹脂（１２）内で自重により沈降
させて蛍光体（７ａ）を樹脂（１２）内で移動させる。
樹脂（１２）を硬化させる加熱過程で樹脂（１２）の粘
度が一旦低下するため、蛍光体（７ａ）が大きな比重に
よって沈降し、蛍光体（７ａ）は樹脂（１２）の先端部
（下側）に集中して分布される。The wiring conductors (2, 2) from the resin sealing body (6)
There are various methods for moving the phosphor (7a) in the resin (12) on the opposite side to the lead-out direction of 3) and outside the light emitting diode chip (1). For example, as shown in FIGS. 3 and 4, a phosphor (7a) having a specific gravity greater than that of the resin (12) is settled by its own weight in the resin (12), and the phosphor (7a) is precipitated in the resin (12). Move.
Since the viscosity of the resin (12) temporarily decreases during the heating process of curing the resin (12), the phosphor (7a) settles due to a large specific gravity, and the phosphor (7a) is moved to the tip (lower side) of the resin (12). ).
【００２０】また、本発明の半導体発光装置には、市販
の蛍光顔料又は蛍光染料を使用することができるが、一
般に図３及び図４に示すように沈降によって樹脂封止体
（６）の先端部に集中的に蛍光顔料又は蛍光染料を分布
させることは難しい。このため、図５及び図６に示すよ
うに、発光ダイオードチップ（１）より下側となるよう
に樹脂封止体（６）の発光部（６ｂ）を形成するための
液状エポキシ樹脂（１２）を成形型（１０）のキャビテ
ィ（１１）内に充填する。液状エポキシ樹脂（１２）内
には蛍光体（７ａ）として蛍光顔料又は蛍光染料が適量
混合されている。次に、発光ダイオードチップ（１）を
含むリードフレーム組立体の端部を成形型（１０）のキ
ャビティ（１１）内に配置した後、蛍光顔料、蛍光染料
を混合しない液状エポキシ樹脂（１３）を注入し、適当
な温度プログラムに従って加熱硬化させると、樹脂封止
体（６）の先端部に蛍光体（７ａ）が集中して分布する
所期の構造が得られる。A commercially available fluorescent pigment or fluorescent dye can be used in the semiconductor light emitting device of the present invention. Generally, as shown in FIGS. 3 and 4, the tip of the resin sealing body (6) is settled by sedimentation. It is difficult to distribute the fluorescent pigment or the fluorescent dye intensively in the part. Therefore, as shown in FIGS. 5 and 6, the liquid epoxy resin (12) for forming the light emitting portion (6b) of the resin sealing body (6) so as to be below the light emitting diode chip (1). Is filled into the cavity (11) of the mold (10). An appropriate amount of a fluorescent pigment or fluorescent dye is mixed as a fluorescent substance (7a) in the liquid epoxy resin (12). Next, after placing the end of the lead frame assembly including the light emitting diode chip (1) in the cavity (11) of the molding die (10), the liquid epoxy resin (13) in which the fluorescent pigment and the fluorescent dye are not mixed is applied. By injecting and curing by heating according to an appropriate temperature program, an expected structure in which the phosphor (7a) is concentrated and distributed at the tip of the resin sealing body (6) is obtained.
【００２１】更に、別法として、成形型（１０）を回転
させる遠心注型を使用して発光ダイオードチップ（１）
より外側に蛍光体（７ａ）を樹脂（１２）内で移動させ
てもよい。樹脂（１２）を硬化させる加熱過程で遠心注
型により成形型（１０）を回転させると、比重の大きな
蛍光体（７ａ）は径方向外側に移動し、蛍光体（７ａ）
は樹脂（１２）の先端部に集中して分布される。その
後、キャビティ（１１）内で樹脂（１２）を硬化させ
て、樹脂封止体（６）を形成した後、リードフレーム組
立体を成形型（１０）から取り出す。なお、前記成形型
（１０）には周知のトランスファモールド金型、インジ
ェクションモールド金型、ポッティング用金型等種々の
金型が含まれる。Further, as another method, a light-emitting diode chip (1) is formed by using a centrifugal casting mold for rotating a mold (10).
The phosphor (7a) may be moved further inside the resin (12). When the mold (10) is rotated by centrifugal casting in the heating process of curing the resin (12), the phosphor (7a) having a large specific gravity moves radially outward, and the phosphor (7a)
Are concentrated and distributed at the tip of the resin (12). Thereafter, the resin (12) is cured in the cavity (11) to form the resin sealing body (6), and then the lead frame assembly is taken out of the mold (10). The mold (10) includes various molds such as a well-known transfer mold, injection mold, and potting mold.
【００２２】本発明の実施の形態は変更が可能である。
例えば、半導体チップ（１）を含むリードフレーム組立
体の一方の端部を成形型（１０）のキャビティ（１１）
内に配置した後に、キャビティ（１１）内に樹脂（１
２）を充填する代わりに、キャビティ（１１）内に樹脂
（１２）を充填した後に、樹脂（１２）内に半導体チッ
プ（１）を浸漬しながらリードフレーム組立体の一方の
端部を成形型（１０）のキャビティ（１１）内に配置し
てもよい。The embodiments of the present invention can be modified.
For example, one end of a lead frame assembly including a semiconductor chip (1) is connected to a cavity (11) of a mold (10).
After being placed in the cavity, the resin (1) is placed in the cavity (11).
Instead of filling with 2), after filling the cavity (11) with the resin (12), the semiconductor chip (1) is immersed in the resin (12), and one end of the lead frame assembly is molded. It may be arranged in the cavity (11) of (10).
【００２３】[0023]
【実施例】アノード側の配線導体（３）とカソード側の
配線導体（２）との間に電圧を印加して発光ダイオード
チップ（１）を発光させると、発光ダイオードチップ
（１）から放出された光は直接又はカップ部（２ａ）内
で反射された後に樹脂封止体（６）の先端部に設けられ
た発光部（６ｂ）に達する。樹脂封止体（６）の発光部
（６ｂ）に達した光の一部は、蛍光体（７ａ）によって
波長変換され元の光と異なった波長の光となる。DESCRIPTION OF THE PREFERRED EMBODIMENTS When a voltage is applied between a wiring conductor (3) on the anode side and a wiring conductor (2) on the cathode side to cause the light emitting diode chip (1) to emit light, the light is emitted from the light emitting diode chip (1). The reflected light directly or after being reflected in the cup portion (2a) reaches the light emitting portion (6b) provided at the tip end portion of the resin sealing body (6). Part of the light reaching the light emitting portion (6b) of the resin sealing body (6) is converted into a light having a different wavelength from the original light by the wavelength conversion by the phosphor (7a).
【００２４】発光ダイオードチップ（１）の光線を吸収
しながら、その光線の波長とは異なる波長の光線を発す
る蛍光体（７ａ）は、基体、賦活体及び融剤より成る。
基体は、アルミニウム、亜鉛、カドミウム、マグネシウ
ム、シリコン、イットリウム等の金属及び希土類元素等
の酸化物、硫化物、珪酸塩、バナジン酸塩等の無機蛍光
体から選択され、銅、鉄、ニッケルのそれらは不適であ
る。賦活体は、銀、銅、マンガン、クロム、ユウロピウ
ム、セリウム、亜鉛、アルミニウム、鉛、リン、砒素、
金等で一般に０.００１％〜数％程度の微量が用いられ
る。融剤は、塩化ナトリウム、塩化カリウム、炭酸マグ
ネシウム、塩化バリウムが使用される。前記無機蛍光体
の外、フルオレセイン、エオシン、油類（鉱物油）及び
市販の蛍光顔料、蛍光染料等の有機蛍光体を使用でき
る。The phosphor (7a), which absorbs the light of the light emitting diode chip (1) and emits light of a wavelength different from the wavelength of the light, comprises a substrate, an activator and a flux.
The substrate is selected from metals such as aluminum, zinc, cadmium, magnesium, silicon, and yttrium, and inorganic phosphors such as oxides such as rare earth elements, sulfides, silicates, and vanadates, and those of copper, iron, and nickel. Is not suitable. The activator is silver, copper, manganese, chromium, europium, cerium, zinc, aluminum, lead, phosphorus, arsenic,
A small amount of about 0.001% to several% is generally used for gold and the like. As a flux, sodium chloride, potassium chloride, magnesium carbonate, and barium chloride are used. In addition to the inorganic phosphors, organic phosphors such as fluorescein, eosin, oils (mineral oil), and commercially available fluorescent pigments and fluorescent dyes can be used.
【００２５】具体的には、例えば発光ダイオードチップ
（１）に発光波長のピークが約４４０ｎｍから約４７０
ｎｍのＧａＮ系の青色発光ダイオードチップ（１）を用
い、また蛍光体（７ａ）には賦活剤としてＣｅ（セリウ
ム）を適量添加したＹＡＧ（イットリウム・アルミニウ
ム・ガーネット、化学式Ｙ3Ａl5Ｏ12、励起波長のピー
ク約４５０ｎｍ、発光波長のピーク約５４０ｎｍの黄緑
色光）の結晶粉末を用いれば、青色発光ダイオードチッ
プ（１）の発光波長とＹＡＧ蛍光体（７ａ）の励起波長
とが略一致するため効率よく波長変換が行われ、またＹ
ＡＧ蛍光体（７ａ）の発光スペクトル分布が半値幅約１
３０ｎｍとブロードなため、半導体発光装置の外部に放
出される光は発光ダイオードチップ（１）の発光と蛍光
体（７ａ）の発光とが混色した青みがかった白色光とな
る。Specifically, for example, the light emitting diode chip (1) has a peak emission wavelength from about 440 nm to about 470 nm.
A GaN-based blue light emitting diode chip (1) of nm and YAG (yttrium aluminum garnet, chemical formula Y 3 Al 5 O 12 , with an appropriate amount of Ce (cerium) added as an activator to the phosphor (7a); If a crystal powder having an excitation wavelength peak of about 450 nm and an emission wavelength peak of about 540 nm (yellow-green light) is used, the emission wavelength of the blue light emitting diode chip (1) and the excitation wavelength of the YAG phosphor (7a) substantially match. Therefore, wavelength conversion is performed efficiently, and Y
The emission spectrum distribution of the AG phosphor (7a) has a half width of about 1
Since the light is broadened to 30 nm, the light emitted to the outside of the semiconductor light emitting device is bluish white light in which light emitted from the light emitting diode chip (1) and light emitted from the phosphor (7a) are mixed.
【００２６】半導体発光装置の発光を更に所望の色調に
調整するとき、例えばＧａ（ガリウム）若しくはＬｕ
（ルテチウム）等又はＧｄ（ガドリニウム）等を適量添
加してＹＡＧ蛍光体（７ａ）の結晶構造を一部変更し、
短波長側又は長波長側にシフトさせて発光スペクトル分
布を変更することができる。半導体発光装置から外部に
放出される光の指向角を広げるため、カップ部（２ａ）
のないリードフレームを用いるとき又は樹脂封止体
（６）に粉末シリカ等の散乱剤を混合させた透明樹脂を
用いるとき、樹脂封止体（６）の発光部（６ｂ）のみに
蛍光体（７ａ）を分布させた構造では、発光ダイオード
チップ（１）の横方向から放出される光成分が蛍光体
（７ａ）に当らず波長変換されないおそれがある。この
ため、図１に示すように蛍光体（７ａ）をリードフレー
ムの先端部を形成する配線導体（２、３）の略上端部
（８、９）まで蛍光体（７ａ）を樹脂封止体（６）内に
分布せるとよい。図１に示す構造でも発光ダイオードチ
ップ（１）の周囲に分布する蛍光体（７ａ）の濃度は極
めて薄く、また上端部（８、９）より下方の樹脂封止体
（６）に含まれる不要な蛍光体（７ａ）は殆どないた
め、発光ダイオードチップ（１）の発熱による蛍光体
（７ａ）の温度消光がなく、蛍光体（７ａ）の使用量が
少ない本発明の利点は失われない。When the light emission of the semiconductor light emitting device is further adjusted to a desired color tone, for example, Ga (gallium) or Lu is used.
(Lutetium) or the like or Gd (gadolinium) or the like is added in an appropriate amount to partially change the crystal structure of the YAG phosphor (7a),
The emission spectrum distribution can be changed by shifting to a shorter wavelength side or a longer wavelength side. Cup portion (2a) for widening the directional angle of light emitted from the semiconductor light emitting device to the outside
When using a lead frame having no resin or when using a transparent resin in which a scattering agent such as powdered silica is mixed in the resin sealing body (6), only the light emitting portion (6b) of the resin sealing body (6) has a phosphor ( In the structure in which 7a) is distributed, the light component emitted from the lateral direction of the light emitting diode chip (1) may not reach the phosphor (7a) and may not be wavelength-converted. For this reason, as shown in FIG. 1, the phosphor (7a) is sealed to the resin sealing body up to the substantially upper ends (8, 9) of the wiring conductors (2, 3) forming the leading end of the lead frame. (6) It is good to distribute within. Even in the structure shown in FIG. 1, the concentration of the fluorescent substance (7a) distributed around the light emitting diode chip (1) is extremely low, and unnecessary concentration is not contained in the resin sealing body (6) below the upper end parts (8, 9). Since there is almost no fluorescent substance (7a), there is no temperature quenching of the fluorescent substance (7a) due to heat generation of the light emitting diode chip (1), and the advantage of the present invention that uses a small amount of the fluorescent substance (7a) is not lost.
【００２７】製造の際に、ＹＡＧ蛍光体（７ａ）を適量
均一に混合した液状エポキシ樹脂（１２）を成形型（１
０）のキャビティ（１１）内に注入した後、発光ダイオ
ードチップ（１）及びボンディングワイヤ（４、５）を
取付けたリードフレームを倒立させてキャビティ（１
１）内に挿入して、図３に示すように所定の位置にリー
ドフレームを保持する。ＹＡＧ蛍光体（７ａ）の密度は
約４.５ｇ／ｃｍ3で、金属、例えば銀の密度１０.５ｇ
／ｃｍ3より小さいが、水の密度約１ｇ／ｃｍ3、石英ガ
ラスの密度約２.２ｇ／ｃｍ3及びエポキシ樹脂の密度約
１.１〜１.４ｇ／ｃｍ3より大きい。一般に樹脂封止体
（６）に用いる液状エポキシ樹脂（１２）は、当初室温
では比較的高粘度であるが、樹脂（１２）を硬化させる
ために昇温すると樹脂分子の運動が活発化して一旦粘度
が大きく低下する。その後硬化剤の働きで樹脂分子間結
合が次第に促進され、最終的に全体が結合して硬化に至
る性質を示す。従って、図３の状態で所定の温度プログ
ラムに従ってエポキシ樹脂（１２）を加熱・昇温する
と、エポキシ樹脂（１２）の粘度の低下時に密度の大き
い重いＹＡＧ蛍光体（７ａ）の粒子が沈降して、図４に
示すように樹脂（１２）の先端部に蛍光体（７ａ）が集
中する分布状態になって、エポキシ樹脂（１２）が硬化
する。At the time of production, a liquid epoxy resin (12) obtained by uniformly mixing an appropriate amount of the YAG phosphor (7a) is molded.
After the injection into the cavity (11) of (0), the lead frame to which the light emitting diode chip (1) and the bonding wires (4, 5) are attached is inverted and the cavity (1) is inverted.
1), and hold the lead frame at a predetermined position as shown in FIG. The density of the YAG phosphor (7a) is about 4.5 g / cm 3 , and the density of a metal such as silver is 10.5 g.
/ Cm 3 less than the density of water about 1 g / cm 3, a density greater than about 1.1～1.4G / cm 3 of density of about 2.2 g / cm 3 and an epoxy resin of the quartz glass. In general, the liquid epoxy resin (12) used for the resin sealing body (6) has a relatively high viscosity at room temperature at first, but when the temperature is raised to cure the resin (12), the movement of the resin molecules becomes active and the resin epoxy is temporarily stopped. The viscosity is greatly reduced. Thereafter, the function of the curing agent gradually promotes the intermolecular bonding of the resin, and finally shows the property that the whole is bonded to be cured. Therefore, when the epoxy resin (12) is heated and heated in accordance with a predetermined temperature program in the state of FIG. 3, when the viscosity of the epoxy resin (12) decreases, the particles of the heavy YAG phosphor (7a) having a large density settle. As shown in FIG. 4, the distribution state is such that the phosphor (7a) is concentrated at the tip of the resin (12), and the epoxy resin (12) is cured.
【００２８】図１に示すように、配線導体（２、３）の
上端部（８、９）の周辺まで蛍光体（７ａ）が分布する
構造、図２に示すように樹脂封止体（６）の最先端部周
辺のみに蛍光体（７ａ）が分布する構造又はこれらの中
間的な構造とするかは、蛍光体（７ａ）の結晶粉末の粒
径、樹脂封止体（６）の初期粘度と加熱時の粘度、樹脂
硬化時の昇温プログラム、樹脂硬化時間等を適当に選択
して、自由に調整することが可能である。As shown in FIG. 1, the structure in which the phosphor (7a) is distributed around the upper ends (8, 9) of the wiring conductors (2, 3), and as shown in FIG. ), A structure in which the phosphor (7a) is distributed only in the vicinity of the leading edge or an intermediate structure between them, depends on the particle size of the crystal powder of the phosphor (7a), the initial size of the resin sealing body (6). The viscosity and the viscosity at the time of heating, the temperature rise program at the time of resin curing, the resin curing time and the like can be appropriately selected and freely adjusted.
【００２９】[0029]
【発明の効果】前記のように、本発明の半導体発光装置
では、発光ダイオードチップの発光を樹脂封止体の先端
部に集中して分布する蛍光体で所望の光波長に変換し樹
脂封止体を通して外部に放出することができると共に、
下記の効果が得られる。 １ 使用する蛍光体の総量を減少することができる。 ２ 発光ダイオードチップの発熱による蛍光体の温度消
光の恐れがない。 ３ 樹脂充填機のシリンジで発光ダイオードチップ及び
ボンディングワイヤを損傷し又は断線・短絡・変形の危
険がない。 ４ 蛍光体による発光波長変換機能を有しつつも信頼性
が高く高効率で安価な半導体発光装置を得ることができ
る。As described above, in the semiconductor light emitting device of the present invention, the light emission of the light emitting diode chip is converted into a desired light wavelength by the fluorescent material concentrated and distributed at the tip of the resin sealing body, and the resin sealing is performed. Can be released outside through the body,
The following effects are obtained. 1. The total amount of phosphors used can be reduced. (2) There is no fear of temperature quenching of the phosphor due to heat generation of the light emitting diode chip. 3. There is no danger of damaging the light emitting diode chip and the bonding wire with the syringe of the resin filling machine, or of disconnection, short circuit or deformation. (4) A highly reliable, highly efficient and inexpensive semiconductor light emitting device having a light emission wavelength conversion function by a phosphor can be obtained.
【図１】 本発明による発光ダイオード装置の断面図FIG. 1 is a sectional view of a light emitting diode device according to the present invention.
【図２】 本発明による他の実施の形態を示す発光ダイ
オード装置の断面図FIG. 2 is a sectional view of a light-emitting diode device showing another embodiment according to the present invention.
【図３】 本発明により発光ダイオード装置を製造する
成形型の断面図FIG. 3 is a sectional view of a mold for manufacturing a light emitting diode device according to the present invention.
【図４】 蛍光体が沈降した状態を示す成形型の断面図FIG. 4 is a cross-sectional view of a mold showing a state in which the phosphor has settled.
【図５】 本発明による他の実施の形態を示す成形型の
断面図FIG. 5 is a cross-sectional view of a molding die showing another embodiment according to the present invention.
【図６】 図５の成形型のキャビティを樹脂により充填
した状態を示す断面図FIG. 6 is a sectional view showing a state in which a cavity of the mold of FIG. 5 is filled with resin.
【図７】 従来の発光ダイオード装置の断面図FIG. 7 is a cross-sectional view of a conventional light emitting diode device.
【図８】 従来の他の発光ダイオード装置の断面図FIG. 8 is a sectional view of another conventional light emitting diode device.
【符号の説明】 （１）・・発光ダイオードチップ（半導体発光素子）、
（１ａ、１ｂ）・・電極、 （２、３）・・配線導
体、 （４、５）・・ボンディングワイヤ、 （６）・
・樹脂封止体、 （６ａ）・・樹脂本体、 （６ｂ）・
・発光部、 （１２）・・樹脂、 （７ａ）・・蛍光
体、（１０）・・成形型、 （１１）・・キャビティ、[Description of Signs] (1) ··· Light-emitting diode chip (semiconductor light-emitting element)
(1a, 1b) ··· electrode, (2, 3) · · wiring conductor, (4, 5) · bonding wire, (6) ·
・ Resin sealed body, (6a) ・ ・ Resin body, (6b) ・
・ Light-emitting part, (12) ・ ・ Resin, (7a) ・ ・ Phosphor, (10) ・ ・ Mold, (11) ・ ・ Cavity,
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年１０月２８日（１９９９．１０．
２８）[Submission date] October 28, 1999 (1999.10.
28)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２０[Correction target item name] 0020
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２０】また、本発明の半導体発光装置には、市販
の蛍光顔料又は蛍光染料を使用することができるが、一
般に図３及び図４に示すように沈降によって樹脂封止体
（６）の先端部に集中的に蛍光顔料又は蛍光染料を分布
させることは難しい。このため、図５及び図６に示すよ
うに、発光ダイオードチップ（１）より下側となるよう
に樹脂封止体（６）の発光部（６ｂ）を形成するための
液状エポキシ樹脂である樹脂（１２）を成形型（１０）
のキャビティ（１１）内に充填する。液状エポキシ樹脂
である樹脂（１２）内には蛍光体（７ａ）として蛍光顔
料又は蛍光染料が適量混合されている。次に、発光ダイ
オードチップ（１）を含むリードフレーム組立体の端部
を成形型（１０）のキャビティ（１１）内に配置した
後、蛍光顔料、蛍光染料を混合しない液状エポキシ樹脂
である樹脂（１３）を樹脂（１２）の上に注入し、適当
な温度プログラムに従って加熱硬化させると、樹脂封止
体（６）の先端部に蛍光体（７ａ）が集中して分布する
所期の構造が得られる。A commercially available fluorescent pigment or fluorescent dye can be used in the semiconductor light emitting device of the present invention. Generally, as shown in FIGS. 3 and 4, the tip of the resin sealing body (6) is settled by sedimentation. It is difficult to distribute the fluorescent pigment or the fluorescent dye intensively in the part. For this reason, as shown in FIGS. 5 and 6, a resin which is a liquid epoxy resin for forming the light emitting portion (6b) of the resin sealing body (6) so as to be below the light emitting diode chip (1). (12) Molding mold (10)
Is filled in the cavity (11). A proper amount of a fluorescent pigment or fluorescent dye is mixed as a fluorescent substance (7a) in the resin (12) which is a liquid epoxy resin. Next, after placing the end of the lead frame assembly including the light emitting diode chip (1) in the cavity (11) of the molding die (10), a resin which is a liquid epoxy resin not mixed with a fluorescent pigment or a fluorescent dye ( Injecting 13) onto the resin (12) and heat-curing it according to an appropriate temperature program, the desired structure in which the phosphor (7a) is concentrated and distributed at the tip of the resin sealing body (6) is obtained. can get.
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２７[Correction target item name] 0027
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２７】製造の際に、ＹＡＧ蛍光体（７ａ）を適量
均一に混合した液状エポキシ樹脂である樹脂（１２）を
成形型（１０）のキャビティ（１１）内に注入した後、
発光ダイオードチップ（１）及びボンディングワイヤ
（４、５）を取り付けたリードフレームを倒立させてキ
ャビティ（１１）内に挿入して、図３に示すように所定
の位置にリードフレームを保持する。ＹＡＧ蛍光体（７
ａ）の密度は約４.５ｇ／ｃｍ3で、金属、例えば銀の密
度１０.５ｇ／ｃｍ3より小さいが、水の密度約１ｇ／ｃ
ｍ3、石英ガラスの密度約２.２ｇ／ｃｍ3及びエポキシ
樹脂の密度約１.１〜１.４ｇ／ｃｍ3より大きい。一般
に樹脂封止体（６）に用いる液状エポキシ樹脂である樹
脂（１２）は、当初室温では比較的高粘度であるが、樹
脂（１２）を硬化させるために昇温すると樹脂分子の運
動が活発化して一旦粘度が大きく低下する。その後硬化
剤の働きで樹脂分子間結合が次第に促進され、最終的に
全体が結合して硬化に至る性質を示す。従って、図３の
状態で所定の温度プログラムに従ってエポキシ樹脂であ
る樹脂（１２）を加熱・昇温すると、エポキシ樹脂であ
る樹脂（１２）の粘度の低下時に密度の大きい重いＹＡ
Ｇ蛍光体（７ａ）の粒子が沈降して、図４に示すように
樹脂（１２）の先端部に蛍光体（７ａ）が集中する分布
状態になって、エポキシ樹脂である樹脂（１２）が硬化
する。At the time of manufacture, a resin (12), which is a liquid epoxy resin obtained by uniformly mixing an appropriate amount of the YAG phosphor (7a), is injected into the cavity (11) of the mold (10).
The lead frame to which the light emitting diode chip (1) and the bonding wires (4, 5) are attached is inverted and inserted into the cavity (11), and the lead frame is held at a predetermined position as shown in FIG. YAG phosphor (7
a density of about 4.5 g / cm 3 of a), a metal, such as silver density of less than 10.5 g / cm 3 is the density of water about 1 g / c
m 3, density greater than about 1.1~1.4g / cm 3 of density of about 2.2 g / cm 3 and an epoxy resin of the quartz glass. Generally, the resin (12), which is a liquid epoxy resin used for the resin sealing body (6), has a relatively high viscosity at room temperature at first, but when the temperature is raised to cure the resin (12), the movement of the resin molecules becomes active. And once the viscosity is greatly reduced. Thereafter, the function of the curing agent gradually promotes the intermolecular bonding of the resin, and finally shows the property that the whole is bonded to be cured. Therefore, when the resin (12), which is an epoxy resin, is heated and heated in accordance with a predetermined temperature program in the state shown in FIG. 3, when the viscosity of the resin (12), which is an epoxy resin, decreases, the density of the heavy YA increases.
The particles of the G phosphor (7a) settle, and the distribution of the phosphor (7a) is concentrated at the tip of the resin (12) as shown in FIG. To cure.
【手続補正３】[Procedure amendment 3]
【補正対象書類名】図面[Document name to be amended] Drawing
【補正対象項目名】全図[Correction target item name] All figures
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【図１】 FIG.
【図２】 FIG. 2
【図３】 FIG. 3
【図４】 FIG. 4
【図５】 FIG. 5
【図６】 FIG. 6
【図７】 FIG. 7
【図８】 FIG. 8
Claims (6)
配線導体（２、３）の一方の端部に載置された半導体発
光素子（１）と、該半導体発光素子（１）の一方の主面
に形成された電極（１ａ、１ｂ）と前記一対の配線導体
（２、３）の少なくとも一方との間を電気的に接続する
ボンディングワイヤ（４、５）と、前記半導体発光素子
（１）、ボンディングワイヤ（４、５）及び配線導体
（２、３）の一方の端部を被覆する光透過性の樹脂封止
体（６）とを備え、前記樹脂封止体（６）は前記半導体
発光素子（１）を被覆すると共に一方の端部から前記一
対の配線導体（２、３）の他方の端部が導出された樹脂
本体（６ａ）と、該樹脂本体（６ａ）の他方の端部に一
体に形成され且つ前記半導体発光素子（１）からの光を
外部に放出する発光部（６ｂ）とを備えた半導体発光装
置において、 前記樹脂封止体（６）のうち前記発光部（６ｂ）に蛍光
体（７ａ）が選択的に混入され、 前記蛍光体（７ａ）は、前記半導体発光素子（１）から
照射される光を吸収して他の異なる発光波長の光を放出
することを特徴とする半導体発光装置。1. A pair of wiring conductors (2, 3), a semiconductor light emitting element (1) mounted on one end of the pair of wiring conductors (2, 3), and a semiconductor light emitting element (1). A) bonding wires (4, 5) for electrically connecting between the electrodes (1a, 1b) formed on one main surface of at least one of the above) and at least one of the pair of wiring conductors (2, 3); A light-transmitting resin sealing body (6) covering one end of the light-emitting element (1), the bonding wires (4, 5) and the wiring conductors (2, 3); 6) a resin main body (6a) which covers the semiconductor light emitting element (1) and has the other end of the pair of wiring conductors (2, 3) led out from one end; A) a light-emitting portion integrally formed at the other end of the light-emitting device and emitting light from the semiconductor light-emitting element to the outside; (6b), a phosphor (7a) is selectively mixed into the light emitting portion (6b) of the resin sealing body (6), and the phosphor (7a) is A semiconductor light emitting device, which absorbs light emitted from a semiconductor light emitting element (1) and emits light having another different emission wavelength.
ａ）は円筒状に形成され、前記発光部（６ｂ）は半球状
に形成された請求項１に記載の半導体発光装置。2. A resin body (6) of the resin sealing body (6).
2. The semiconductor light emitting device according to claim 1, wherein a) is formed in a cylindrical shape, and said light emitting portion (6b) is formed in a hemispherical shape.
配線導体（２、３）の一方の端部に載置された半導体発
光素子（１）と、該半導体発光素子（１）の一方の主面
に形成された電極（１ａ、１ｂ）と前記一対の配線導体
（２、３）の少なくとも一方との間を電気的に接続する
ボンディングワイヤ（４、５）とを備えたリードフレー
ム組立体を準備する工程と、 前記半導体発光素子（１）を含む前記リードフレーム組
立体の一方の端部を成形型（１０）のキャビティ（１
１）内に配置する前又は後に蛍光体（７ａ）を含む流動
化した光透過性の樹脂（１２）を前記成形型（１０）の
キャビティ（１１）内に充填する工程と、 前記半導体発光素子（１）よりも前記配線導体（２、
３）の他方の端部から離間した位置に前記蛍光体（７
ａ）を前記樹脂（１２）内で移動させる工程と、 前記キャビティ（１１）内で前記樹脂（１２）を硬化さ
せて、樹脂封止体（６）を形成した後、前記リードフレ
ーム組立体を前記成形型（１０）から取り出す工程とを
含むことを特徴とする半導体発光装置の製造方法。3. A pair of wiring conductors (2, 3), a semiconductor light emitting element (1) mounted on one end of the pair of wiring conductors (2, 3), and a semiconductor light emitting element (1). )) And bonding wires (4, 5) for electrically connecting between the electrodes (1a, 1b) formed on one main surface and at least one of the pair of wiring conductors (2, 3). Preparing a lead frame assembly; and connecting one end of the lead frame assembly including the semiconductor light emitting device (1) to a cavity (1) of a mold (10).
(1) filling a cavity (11) of the molding die (10) with a fluidized light-transmitting resin (12) containing a phosphor (7a) before or after being disposed in the semiconductor light emitting device; The wiring conductors (2,
The phosphor (7) is located at a position separated from the other end of (3).
(a) moving the resin (12) in the resin (12); and curing the resin (12) in the cavity (11) to form a resin sealing body (6). Removing from the mold (10).
る前記蛍光体（７ａ）を前記樹脂（１２）内で自重によ
り沈降させて前記蛍光体（７ａ）を前記樹脂（１２）内
で移動させる工程を含む請求項３に記載の半導体発光装
置の製造方法。4. The phosphor (7a) having a specific gravity higher than that of the resin (12) is settled by its own weight in the resin (12), and the phosphor (7a) is moved in the resin (12). The method for manufacturing a semiconductor light emitting device according to claim 3, comprising a step.
導体発光素子（１）よりも前記配線導体（２、３）の他
方の端部から離間した位置に前記蛍光体（７ａ）を前記
樹脂（１２）内で移動させる工程を含む請求項３に記載
の半導体発光装置の製造方法。5. The phosphor (7a) is rotated by rotating the mold (10) so that the phosphor (7a) is separated from the other end of the wiring conductor (2, 3) with respect to the semiconductor light emitting element (1). The method for manufacturing a semiconductor light emitting device according to claim 3, further comprising a step of moving the resin in the resin (12).
配線導体（２、３）の一方の端部に載置された半導体発
光素子（１）と、該半導体発光素子（１）の一方の主面
に形成された電極（１ａ、１ｂ）と前記一対の配線導体
（２、３）の少なくとも一方との間を電気的に接続する
ボンディングワイヤ（４、５）とを備えたリードフレー
ム組立体を準備する工程と、 前記半導体発光素子（１）を含む前記リードフレーム組
立体の一方の端部を成形型（１０）のキャビティ（１
１）内に配置する前又は後に前記半導体発光素子（１）
よりも前記配線導体（２、３）の他方の端部から離間し
た位置まで蛍光体（７ａ）を混入した光透過性の樹脂
（１２）を前記成形型（１０）のキャビティ（１１）内
に充填する工程と、 前記キャビティ（１１）の残部に蛍光体（７ａ）を混入
しない樹脂（１３）を充填して前記半導体発光素子
（１）を被覆する工程と、 前記キャビティ（１１）内で前記樹脂（１２、１３）を
硬化させて、樹脂封止体（６）を形成した後、前記リー
ドフレーム組立体を前記成形型（１０）から取り出す工
程とを含むことを特徴とする半導体発光装置の製造方
法。6. A pair of wiring conductors (2, 3), a semiconductor light emitting element (1) mounted on one end of the pair of wiring conductors (2, 3), and a semiconductor light emitting element (1). )) And bonding wires (4, 5) for electrically connecting between the electrodes (1a, 1b) formed on one main surface and at least one of the pair of wiring conductors (2, 3). Preparing a lead frame assembly; and connecting one end of the lead frame assembly including the semiconductor light emitting device (1) to a cavity (1) of a mold (10).
The semiconductor light emitting device (1) before or after being arranged in (1)
The light-transmissive resin (12) mixed with the phosphor (7a) is positioned farther away from the other end of the wiring conductor (2, 3) than in the cavity (11) of the mold (10). Filling the remaining portion of the cavity (11) with a resin (13) in which the phosphor (7a) is not mixed, thereby covering the semiconductor light emitting element (1); Curing the resin (12, 13) to form a resin sealing body (6), and then removing the lead frame assembly from the molding die (10). Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21103398A JP3584163B2 (en) | 1998-07-27 | 1998-07-27 | Method for manufacturing semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21103398A JP3584163B2 (en) | 1998-07-27 | 1998-07-27 | Method for manufacturing semiconductor light emitting device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004182718A Division JP2004274087A (en) | 2004-06-21 | 2004-06-21 | Semiconductor light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000049389A true JP2000049389A (en) | 2000-02-18 |
| JP3584163B2 JP3584163B2 (en) | 2004-11-04 |
Family
ID=16599264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21103398A Expired - Fee Related JP3584163B2 (en) | 1998-07-27 | 1998-07-27 | Method for manufacturing semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3584163B2 (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000164937A (en) * | 1998-11-27 | 2000-06-16 | Matsushita Electronics Industry Corp | Semiconductor light emitting device and manufacture thereof |
| JP2002185046A (en) * | 2000-12-19 | 2002-06-28 | Sharp Corp | Chip-part type led and its manufacturing method |
| WO2002054503A1 (en) * | 2000-12-28 | 2002-07-11 | Toyoda Gosei Co., Ltd. | Light emitting device |
| JP2003142737A (en) * | 2001-08-22 | 2003-05-16 | Nichia Chem Ind Ltd | Light emitting device |
| KR20030060281A (en) * | 2002-01-08 | 2003-07-16 | 주식회사 이츠웰 | Light emitting device and display using the device |
| JP2004501512A (en) * | 2000-05-15 | 2004-01-15 | ゼネラル・エレクトリック・カンパニイ | White light emitting phosphor blend for LED elements |
| JP2004031657A (en) * | 2002-06-26 | 2004-01-29 | Nobuhiko Sawaki | Semiconductor light emitting element, method of manufacturing the same, and semiconductor light emitting apparatus |
| JP2005123560A (en) * | 2003-09-25 | 2005-05-12 | Nichia Chem Ind Ltd | Light emitting device and its forming method |
| JP2006049735A (en) * | 2004-08-09 | 2006-02-16 | Stanley Electric Co Ltd | Led and its manufacturing method |
| JP2007027801A (en) * | 2006-11-01 | 2007-02-01 | Sanyo Electric Co Ltd | Led display device and manufacturing method thereof |
| JP2007194525A (en) * | 2006-01-23 | 2007-08-02 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
| EP1993151A2 (en) * | 2007-05-18 | 2008-11-19 | Kabushiki Kaisha Toshiba | Light emitting device and method of manufacturing the same |
| US7910940B2 (en) | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
| KR101248515B1 (en) * | 2006-03-31 | 2013-04-04 | 서울반도체 주식회사 | Light emitting diode |
| KR101374899B1 (en) * | 2012-01-13 | 2014-03-17 | 서울반도체 주식회사 | Light emitting diode |
| JP2016063177A (en) * | 2014-09-22 | 2016-04-25 | トヨタ紡織株式会社 | Composite film and method for producing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244161A (en) * | 2011-07-04 | 2011-11-16 | 张汝京 | Long-afterglow device and manufacturing method thereof |
-
1998
- 1998-07-27 JP JP21103398A patent/JP3584163B2/en not_active Expired - Fee Related
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000164937A (en) * | 1998-11-27 | 2000-06-16 | Matsushita Electronics Industry Corp | Semiconductor light emitting device and manufacture thereof |
| JP2004501512A (en) * | 2000-05-15 | 2004-01-15 | ゼネラル・エレクトリック・カンパニイ | White light emitting phosphor blend for LED elements |
| JP2002185046A (en) * | 2000-12-19 | 2002-06-28 | Sharp Corp | Chip-part type led and its manufacturing method |
| US7138660B2 (en) | 2000-12-28 | 2006-11-21 | Toyoda Gosei Co., Ltd. | Light emitting device |
| US7679101B2 (en) | 2000-12-28 | 2010-03-16 | Toyoda Gosei Co., Ltd. | Light emitting device |
| US6943380B2 (en) | 2000-12-28 | 2005-09-13 | Toyoda Gosei Co., Ltd. | Light emitting device having phosphor of alkaline earth metal silicate |
| US7259396B2 (en) | 2000-12-28 | 2007-08-21 | Toyoda Gosei Co., Ltd. | Light source with a light-emitting element |
| WO2002054503A1 (en) * | 2000-12-28 | 2002-07-11 | Toyoda Gosei Co., Ltd. | Light emitting device |
| US7157746B2 (en) | 2000-12-28 | 2007-01-02 | Toyoda Gosei Co., Ltd. | Light emitting device having a divalent-europium-activated alkaline earth metal orthosilicate phosphor |
| JP2003142737A (en) * | 2001-08-22 | 2003-05-16 | Nichia Chem Ind Ltd | Light emitting device |
| KR20030060281A (en) * | 2002-01-08 | 2003-07-16 | 주식회사 이츠웰 | Light emitting device and display using the device |
| JP2004031657A (en) * | 2002-06-26 | 2004-01-29 | Nobuhiko Sawaki | Semiconductor light emitting element, method of manufacturing the same, and semiconductor light emitting apparatus |
| JP2005123560A (en) * | 2003-09-25 | 2005-05-12 | Nichia Chem Ind Ltd | Light emitting device and its forming method |
| JP2006049735A (en) * | 2004-08-09 | 2006-02-16 | Stanley Electric Co Ltd | Led and its manufacturing method |
| US7910940B2 (en) | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
| JP2007194525A (en) * | 2006-01-23 | 2007-08-02 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
| KR101248515B1 (en) * | 2006-03-31 | 2013-04-04 | 서울반도체 주식회사 | Light emitting diode |
| JP2007027801A (en) * | 2006-11-01 | 2007-02-01 | Sanyo Electric Co Ltd | Led display device and manufacturing method thereof |
| JP2008288409A (en) * | 2007-05-18 | 2008-11-27 | Toshiba Corp | Light-emitting device, and manufacturing method thereof |
| EP1993151A2 (en) * | 2007-05-18 | 2008-11-19 | Kabushiki Kaisha Toshiba | Light emitting device and method of manufacturing the same |
| US8419497B2 (en) | 2007-05-18 | 2013-04-16 | Kabushiki Kaisha Toshiba | Light emitting device and method of manufacturing the same |
| KR101374899B1 (en) * | 2012-01-13 | 2014-03-17 | 서울반도체 주식회사 | Light emitting diode |
| JP2016063177A (en) * | 2014-09-22 | 2016-04-25 | トヨタ紡織株式会社 | Composite film and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3584163B2 (en) | 2004-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5100944B2 (en) | Light emitting semiconductor device with luminescence conversion element | |
| TWI351774B (en) | Semiconductor light emitting device | |
| US7436002B2 (en) | Surface-mountable radiation-emitting component | |
| JP2000049389A (en) | Semiconductor light emitting device and manufacture thereof | |
| US7534634B2 (en) | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source | |
| JP4001703B2 (en) | How to use casting materials | |
| JP4756841B2 (en) | Manufacturing method of semiconductor light emitting device | |
| JP5106813B2 (en) | Color conversion type light emitting diode | |
| JP4747726B2 (en) | Light emitting device | |
| JP2005340813A (en) | Mold material containing fluorescent material and light-emitting device made of the same | |
| JP4306224B2 (en) | Method for manufacturing light emitting device | |
| JP4190258B2 (en) | Method for producing phosphor | |
| JPH10261821A (en) | Semiconductor light emitting device and its manufacture | |
| WO2002089219A1 (en) | Light-emitting apparatus | |
| JP2005191420A (en) | Semiconductor light emitting device having wavelength converting layer and its manufacturing method | |
| JP4661032B2 (en) | Light emitting device and manufacturing method thereof | |
| JP2009170825A (en) | Light emitting device and manufacturing method thereof | |
| JP4763122B2 (en) | Light emitting diode and manufacturing method thereof | |
| JP2003008073A (en) | Light emitting element | |
| JP2006032387A (en) | Led lamp | |
| JP2004274087A (en) | Semiconductor light-emitting device | |
| JP4661031B2 (en) | Light emitting device | |
| KR100821684B1 (en) | A white LED device | |
| JP3399342B2 (en) | Method of forming light emitting diode | |
| KR20140007510A (en) | Led package and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040621 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040802 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080806 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090806 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090806 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100806 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110806 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110806 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120806 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120806 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |