JP4661031B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP4661031B2
JP4661031B2 JP2003182097A JP2003182097A JP4661031B2 JP 4661031 B2 JP4661031 B2 JP 4661031B2 JP 2003182097 A JP2003182097 A JP 2003182097A JP 2003182097 A JP2003182097 A JP 2003182097A JP 4661031 B2 JP4661031 B2 JP 4661031B2
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Prior art keywords
light emitting
resin
emitting element
light
emitting device
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Expired - Fee Related
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JP2003182097A
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JP2005019662A5 (en
JP2005019662A (en
Inventor
友章 北山
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日亜化学工業株式会社
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Publication of JP2005019662A5 publication Critical patent/JP2005019662A5/ja
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting device that can be used for a liquid crystal backlight, an illumination light source, various indicators, a display, a traffic signal lamp, and the like. In particular, the present invention relates to a light-emitting device that can be used outdoors, has high reliability, and has little change with time.
[0002]
[Prior art]
A light-emitting device using a light-emitting element emits light with a small color, high power efficiency, and vivid colors. In addition, since the light-emitting element is a semiconductor element, there is no worry about a broken ball. Further, it has excellent initial driving characteristics and is strong against vibration and repeated on / off lighting. Because of such excellent characteristics, semiconductor light emitting devices are used as various light sources. In recent years, not only light emitting elements that emit red light and green light but also nitride semiconductors (In x Ga y Al 1-xy N, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) have been developed.
[0003]
For example, as a light-emitting device using a light-emitting element, a transparent resin is molded into a lens shape so as to wrap the light-emitting element on a stem to which the light-emitting element is fixed, and the mold part is sealed with a metal cage having transparent glass. An apparatus is known (see, for example, Patent Document 1). This translucent resin is molded into a lens shape using an epoxy resin or a silicone resin.
[0004]
In recent years, part of the light emitted from the light-emitting element is wavelength-converted by a phosphor, and the light having a wavelength different from that of the light-emitting element is emitted by mixing and emitting the wavelength-converted light and light from the light-emitting element that is not wavelength-converted Light emitting devices that emit colors have been developed. In particular, since a light emitting device that emits white light can be used in a wide range of fields such as general illumination, a display, and a backlight for liquid crystal, there is a demand for a phosphor that is particularly used in a white light emitting device. The emission color of the white light emitting device is obtained by the principle of light color mixing. The blue light emitted from the light emitting element is incident on the phosphor layer, and after being repeatedly absorbed and scattered several times in the layer, is emitted to the outside. On the other hand, blue light absorbed by the phosphor serves as an excitation source and emits yellow fluorescence. The yellow light and the blue light are mixed with each other due to the complementary color, and appear to be white to the human eye. Thus, a white light emitting device using a blue light emitting element is manufactured.
[0005]
[Patent Document 1]
JP 52-11784 A
[0006]
[Problems to be solved by the invention]
However, a sealing resin such as an epoxy resin has a property of being weak against strong light and heat from the light emitting element. In particular, in the case of a light-emitting element using a nitride semiconductor element capable of emitting light of a short wavelength, the encapsulating resin gradually deteriorates and colors from the periphery of the light-emitting element because the energy is higher than red and green, and the coloring The portion absorbs light from the light emitting element, and the light extraction efficiency is reduced. In addition, the temperature of the light emitting element rises during driving, and the sealing resin is deteriorated or colored due to heat from the light emitting element. Particularly, a small light emitting device is easily affected by heat due to heat dissipation problems.
[0007]
In the invention described in Patent Document 1, since the light emitting element fixed to the stem is sealed with a metal bowl having transparent glass, heat generated from the light emitting element is stored in the metal bowl. There is a problem that the transparent resin enclosing the light emitting element is deteriorated by heat generated from the light emitting element and heat accumulated in the metal bowl.
[0008]
Further, as shown in FIG. 10, when the phosphor is uniformly mixed in the resin and applied onto the light emitting element, the resin on the upper surface portion of the light emitting element is thick and is emitted from the upper surface portion of the light emitting element. Since the light is absorbed by the phosphor, there is a problem that the front luminance of the light emitting device is low and the color tone is likely to vary due to the dispersion of the phosphor. In particular, when manufacturing a light emitting device that emits white light by using a light emitting element that emits blue light as an excitation light source and irradiating a fluorescent material that emits white light, blue light and yellow light may vary depending on the amount of phosphor applied and the degree of dispersion. There is a problem that the color mixture with is not uniform.
[0009]
In view of the above, an object of the present invention is to provide a light-emitting device with high brightness that prevents deterioration of the sealing resin due to heat and light emitted from the light-emitting element, and emits light uniformly.
[0010]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present inventor has intensively studied, and as a result, the present invention has been completed.
[0011]
The present invention is a light emitting device having a light emitting element, a base on which the light emitting element is placed, and a lid provided on the base for hermetically sealing the light emitting element, the base having a concave shape The concave portion has a bottom surface portion and a side surface portion extending from the bottom surface. The concave portion has an opening area larger than a bottom area of the bottom surface portion, and the concave portion The light emitting element is placed on the bottom surface of the light emitting element, and at least a part of the light emitting element is covered with a light-transmitting resin, the resin contains a phosphor, and the resin is The concave shape is formed in the concave portion. Sign The present invention relates to a light-emitting device. In general, a silicone resin has higher heat resistance than other silicones (oil / rubber). However, when the resin is thick (for example, 200 μm or more), there is a problem that a crack or the like occurs. In addition, the resin is often used as a varnish (including a solvent), and there are problems such as wire disconnection due to generation of bubbles due to solvent volatilization and curing shrinkage. In addition, if the solvent is not completely evaporated, the silicone resin (especially silicone varnish) is used as the sealing resin for the light-emitting element due to problems such as adverse effects on the light-emitting elements, wires, and the entire members constituting the light-emitting device. Not used much.
[0012]
On the other hand, in the present invention, since the light emitting element is covered with a resin such as silicone containing a phosphor, heat generation of the light emitting element by driving, accumulation of the heat by hermetic sealing, and the periphery of the light emitting device Even when exposed to a high temperature of 200 ° C. or more and 250 ° C. or less for a long time (for example, 100 hours) in a high temperature atmosphere, deterioration due to heat does not occur. In addition, problems such as cracks do not occur and bubbles do not occur. This is thought to be because by adding an inorganic substance such as a phosphor to the silicone varnish, the solvent in the resin tends to volatilize and the solvent does not remain in the resin. Furthermore, the hermetic sealing with a lid such as a glass cap eliminates the problem of wire protection due to the wire being exposed.
[0013]
Further, with the above structure, the front luminance of the light emitting element emitted from the upper surface of the light emitting element can be increased, and the color tone variation of the entire light emitting device can be reduced. This is because by applying a thin phosphor on the upper surface of the light emitting element, the amount of light from the light emitting element absorbed by the phosphor is reduced and the front luminance of the light emitting element is increased.
[0014]
In addition, a light emitting device having a desired color tone can be provided by using a resin containing a phosphor. In addition, by increasing the phosphor content, the desired color tone can be adjusted with a small amount of resin.
[0015]
Furthermore, by adopting the above-described configuration, for example, when the shape of the opening portion of the recess has a truncated cone shape whose larger diameter is the opening side, or the shape of the recess has a hemispherical shape. In this case, the extraction efficiency of light emitted from the light emitting element can be improved. In addition, the directivity of light can be controlled. This is because by making the shape of the opening of the recess wide, the light emitted from the light emitting element is irradiated onto the side surface of the recess, and the irradiated light is emitted to the outside.
[0016]
Note that in the case where a resin is not used for the light emitting portion of the light emitting element, light emitted from the light emitting element is emitted into air that is hermetically sealed. At this time, since the refractive index of air with respect to the light emitting element is low, total reflection occurs at the interface between the light emitting element and air, and there is light that is not emitted into the air. Thereby, the extraction efficiency of the light emitted from the light emitting element is lowered. Therefore, it is necessary to improve the light extraction efficiency by coating the light emitting portion of the light emitting element with a resin having a higher refractive index than air.
[0017]
The resin preferably has a volume solid percentage of 70% or less. Moreover, the state reduced to the viscosity close | similar to the lower limit which phosphor etc. do not settle by adjusting the content rate of a volatile solvent is preferable. In addition, the coating amount is preferably from several μm to several tens μm from the upper surface of the light emitting element. When the solvent is volatilized in this state, there is almost no phosphor or the like on the upper surface of the light emitting element, and a large amount of phosphor or the like is accumulated on the side surface. Thereby, a fluorescent substance can be uniformly apply | coated to the light emitting element surface, and color tone dispersion | variation can be reduced. Moreover, when the base | substrate which has a recessed part is used, the center vicinity of a recessed part is dented with hardening of 1st resin. When the light emitting element is placed under the concave portion near the center, the first resin is thin on the upper surface of the light emitting element, so that light emitted from the upper surface of the light emitting element is contained in the first resin. It is hardly absorbed by the phosphor contained in and emits strong light upward. On the other hand, the 1st resin in which the fluorescent substance is contained in the recessed part side part is apply | coated. The light emitted from the side surface of the light emitting element is absorbed by the phosphor contained in the first resin, is reflected by the side surface portion of the recess, and the light from the phosphor is emitted above the light emitting element. A light-emitting device having high luminance and a desired color tone can be easily manufactured by using mixed color light of light emitted from the upper surface of the light-emitting element and light emitted from the phosphor on the side surface of the recess.
[0018]
In general, the resin preferably has a contact angle of 60 ° or less. If the contact angle is larger than 60 °, when the resin is coated on the substrate on which the light emitting element is mounted, the resin does not easily go around the light emitting element and it is difficult to place the resin at a predetermined position. On the other hand, when the contact angle is 60 ° or less, the resin easily goes around the light emitting element, and the resin can be disposed at a predetermined position. However, in addition to the contact angle, elements such as resin viscosity, wettability to a member such as a light emitting element, resin application amount, resin application method, etc. are added, so by changing these various elements, the above Since the problem can be solved, it cannot be used if the contact angle is more than 60 °.
[0019]
The phosphor is preferably dispersed uniformly in the resin. Thereby, the color tone dispersion | variation of the light discharge | released from a light-emitting device can be reduced.
[0020]
It is preferable that a reflective surface is formed on the side surface of the concave portion. Thereby, the light emitted from the light emitting element is irradiated onto the side surface of the concave portion, and most of the irradiated light is emitted to the outside.
[0021]
In the light emitting device, it is preferable that the resin covers the side surface portion of the concave portion of the base body to the bottom surface portion of the concave portion of the base body and the side surface and top surface of the light emitting element. This is because covering the light emitting portion of the light emitting element can suppress total reflection at the interface between the light emitting element and the resin. Further, by covering the light emitting element, the light emitting element can be protected. Furthermore, when the phosphor is arranged at a position away from the light emitting element, color tone variation is likely to occur. However, in the present invention, since the phosphor is contained in the resin covering the light emitting element, the color tone variation can be reduced. Can do.
[0022]
In the light emitting device, it is preferable that the film thickness of the resin on the upper surface of the light emitting element is smaller than the film thickness of the resin on the bottom surface of the concave portion of the base in the peripheral portion of the light emitting element. Accordingly, a desired color tone is obtained by mixing light emitted from the upper surface of the light emitting element (for example, blue light) and light from the phosphor converted in wavelength by light emitted from the side surface of the light emitting element (for example, yellow light). A light emitting device having (for example, white light) can be provided. In particular, the light from the phosphor is reflected by the side surface of the concave portion of the substrate and mixed with the light from the light emitting element, whereby the color tone variation can be further reduced. On the other hand, when the resin is disposed only on the upper surface of the light emitting element, the color tone is likely to vary depending on the degree of dispersion of the phosphor, and thus it is difficult to provide a light emitting device having a uniform color tone.
[0023]
In the light emitting device, it is preferable that an upper surface of the resin in a peripheral portion of the light emitting element is substantially the same height as an upper surface of the resin on the light emitting element. Thereby, it is possible to improve the light extraction efficiency.
[0024]
In the light emitting device, it is preferable that the upper surface of the resin on the bottom surface side of the concave portion of the base has a flat portion substantially parallel to the bottom surface of the concave portion of the base. By having a planar shape, the light extraction efficiency can be improved. Further, light can be emitted uniformly. In particular, the surface of the resin has a bottom surface portion having a planar shape and a portion having a side surface portion according to the shape of the concave portion of the base, and the light emitted from the concave portion can be made uniform. .
[0025]
In the light emitting device, it is preferable that the resin is coated with a substantially uniform thickness on a side surface of the concave portion of the base. Part of the light emitted from the light emitting element is applied to the side surface of the recess of the base. For this reason, by forming a film having a uniform thickness on the side surface portion, the light emitted from the light emitting element is irradiated to the phosphor in the resin, and the light from the uniform phosphor is emitted from the side surface portion. Can be released. Thereby, the homogenization of the light of a light-emitting device can be achieved. Further, since the resin extends to the side surface portion, the organic solvent of the resin can be efficiently scattered during the heat curing of the resin.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a light-emitting device and a manufacturing method thereof according to the present invention will be described with reference to embodiments and examples. However, the present invention is not limited to this embodiment and example.
[0027]
FIG. 1A is a schematic plan view showing a light emitting device according to an embodiment of the present invention. FIG.1 (b) is a schematic sectional drawing which shows the light-emitting device concerning embodiment of this invention. FIG. 2 is an enlarged schematic cross-sectional view of the concave portion of the base in the light emitting device according to the embodiment of the present invention. Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0028]
A light-emitting device 100 according to the present invention includes a light-emitting element 1, a base 5 on which the light-emitting element 1 is placed, and a lid 8 provided on the base 5 that hermetically seals the light-emitting element 1. The lid 8 has a light-transmitting window portion 7 and a lid 6 fitted with the window portion 7 in order to emit light from the light emitting element 1. The base 5 is made of metal and has a recess 5a for housing the light emitting element 1 in the center. The base portion, which is the peripheral portion of the concave portion 5a, has two through holes penetrating in the thickness direction, and the respective through holes face each other with the concave portion 5a interposed therebetween. Positive and negative lead electrodes 2 are inserted into the through-holes through hard glass which is an insulating member 3.
[0029]
Both end portions of the lead electrode 2 protrude from the surface of the base portion, and the bottom surface of the lead electrode 2 is positioned substantially on the same plane as the bottom surface of the recess 5a. In the present specification, the surface of each member in the opening direction of the recess 5a of the base body 5 is referred to as a main surface, and the opposite surface facing the main surface is referred to as a back surface.
[0030]
On the main surface side of the metal base 5 thus configured, the light emitting element 1 is disposed in the recess 5 a of the base 5, and each electrode of the light emitting element 1 is electrically connected to each lead electrode 2 by the wire 4. Connect to. The main surface side of the base body 5 that can be made conductive in this way is hermetically sealed with a lid body 8 having a translucent window portion 7 and a lid 6.
[0031]
The light emitting element 1 placed in the recess 5 a is covered with a resin 10. The resin 10 extends from the bottom surface portion 5b of the concave portion 5a where the light emitting element is placed to the side surface portion 5c of the concave portion 5a, and has a shape of the concave portion 5a. Sign The shape of the recessed portion 5a is formed. In the shape of this recess 5a Sign This does not mean that it has the same shape as the concave portion 5a in a physical sense, but means that the shape substantially the same as the concave portion 5a is formed inside the concave portion 5a along the shape of the concave portion 5a. If it is a taper shape, it means that the resin 10 forms a taper shape along the inner side of the recessed part 5a.
[0032]
The resin 10 can be potted into the recess 5a, poured from the side surface 5c of the recess 5a, or sprayed out. At this time, the resin is selected in consideration of the viscosity and contact angle of the resin. In the present invention, the method of injecting the resin 10 into the recess 5a is not limited, but the resin 10 is dried and heated, and the organic solvent in the resin 10 is volatilized and cured. At this time, the central part of the recessed part 5a is dented using resin with a large volumetric shrinkage rate. This prevents the organic solvent from remaining in the resin 10. In particular, volatilization of the organic solvent can be promoted by mixing the phosphor 30 into the resin 10. Since the degree of volatilization of the organic solvent varies depending on the mixing amount of the phosphor 30, the mixing amount of the phosphor 30 is adjusted as appropriate. In particular, the mixing amount of the phosphor 30 is preferably 1 to 50% by weight, and more preferably 15 to 25% by weight with respect to the resin 10. Here, the resin 10 is removed from the recess 5a. Sign The shape to be formed not only does not leave the organic solvent or moisture, but also places the light emitting element 1 under the recessed portion at the center of the recessed portion 5a to emit light emitted from the front surface of the light emitting device 100. The color variation due to the mixed color light is also adjusted. That is, for example, the light emitting element 1 is placed under the concave portion at the center of the concave portion 5a, and blue light is mainly emitted by the light emitted from the upper surface of the light emitting element 1, and the light emitting element 1 The light emitted from the side surface is absorbed and scattered by the phosphor 30 in the resin 10 and reflected by the side surface portion 5c of the concave portion 5a, so that yellow light is mainly emitted and becomes mixed color light in front of the light emitting device 100. , Emitted as white light to the outside. Conventionally, since many phosphors 30 are applied to the upper surface portion of the light emitting element 1, the blue light emitted from the upper surface is insufficient, and as a result, the light emission luminance from the light emitting device 100 is lowered as a whole. It was. On the other hand, in order to increase the amount of light emitted from the upper surface of the light emitting element 1, it is conceivable to dispose a resin containing a phosphor only on the side surface of the light emitting element without covering the upper surface of the light emitting element. There is a problem that the light-emitting element is not sufficiently protected because it is exposed. In addition, in order to cover the upper surface of the light emitting element, it may be possible to apply the phosphor to only the side portion of the light emitting element by potting a resin that does not contain the phosphor. Since it is necessary to apply, it becomes difficult to manufacture. As described above, considering the simplicity of the manufacturing process when placing the resin 10 on the light emitting element 1 and the variation in color tone due to the coating amount and dispersibility of the phosphor 30, the resin 10 in which the phosphor 30 is uniformly dispersed. Is most preferably applied to the light emitting element 1 by only one application. Further, by arranging the resin 10 in the light emitting portion of the light emitting element 1, there is an effect that extraction of light from the light emitting element 1 can be enhanced. However, in this step, the phosphor 30 is slightly disposed on the upper surface of the light emitting element 1, but since the light extraction efficiency is not lowered, the phosphor is substantially not contained. The same effect can be obtained as when the resin is arranged.
[0033]
<Method for Manufacturing Light-Emitting Device 100>
The light emitting device 100 can be manufactured by the following manufacturing method.
[0034]
The light emitting element 1 is placed on the base 5 provided with the recess 5a. A lead electrode 2 is provided on the base 5 in advance. The light emitting element 1 is die-bonded to the bottom surface portion 5b of the concave portion 5a of the base body 5 by eutectic bonding or die bond resin. After the light emitting element 1 is die-bonded, the wire 4 is bonded to the electrode portion of the light emitting element 1 and the lead electrode 2 to establish electrical connection.
[0035]
A resin 10 in which the phosphors 30 are uniformly dispersed in advance is poured into the recess 5a of the base body 5 on which the light emitting element 1 formed in this way is placed. At this time, air is prevented from entering the gap between the resin 10 and the recess 5a. This is because the introduction of air causes problems such as variations in color tone and peeling between the resin 10 and the recess 5a. After pouring the resin 10 into the recess 5a, the organic solvent is volatilized. At the same time as or after removal of the organic solvent, the resin 10 is cured by heating and drying. This heating and drying are performed gradually so that no bubbles are generated in the resin 10.
[0036]
After the resin 10 is coated on the light emitting element 1, the base body 5 is provided with a lid 8 having a window portion 7 and a lid 6 for hermetic sealing.
[0037]
The light emitting device 100 can be manufactured through the above steps.
[0038]
<Different embodiments>
FIG. 4 is a schematic cross-sectional view showing a light-emitting device according to another embodiment of the present invention. FIG. 7 is an enlarged schematic plan view showing a mounting portion of the light emitting element in the light emitting device according to the embodiment of the present invention. FIG. 4 is a schematic cross-sectional view taken along line AA in FIG. Since the light emitting device 200 has substantially the same configuration except for the inside of the light emitting device 100 and the concave portion 5a, the same reference numerals are used where the same configuration is adopted.
[0039]
The light emitting element 1 placed in the recess 5 a is covered with the first resin 10. Further, the upper surface of the first resin 10 is covered with the second resin 20. The first resin 10 contains the phosphor 30 uniformly dispersed therein. Similarly to the above, the first resin 10 is applied to cover the light emitting element 1. After coating the first resin 10, the second resin 20 is applied to cover the first resin 10.
[0040]
The second resin 20 fills the dent of the first resin 10 and forms a planar shape on the upper surface of the second resin 20. This planar shape is preferably substantially parallel to the bottom surface of the recess 5a. Furthermore, it is preferable from the viewpoint of light extraction that the planar shape is substantially flush with the upper end of the side surface portion 5c of the recess 5a.
[0041]
The manufacturing method of the light emitting device 200 is substantially the same as the manufacturing method of the light emitting device 100 except that the second resin 20 is provided.
[0042]
The first resin 10 is poured into the recess 5a of the base 5 on which the light emitting element 1 is placed. After the first resin 10 is heated, dried and cured, the second resin 20 is poured onto the first resin 10. The second resin 20 is also poured so that bubbles do not enter the interface between the first resin 10 and the second resin 20. The 1st resin 10 has comprised the shape corresponding to the recessed part 5a after hardening. The second resin 20 is heated, dried and cured. The second resin 20 uses a resin having a low volume shrinkage rate to make the surface of the second resin 20 flat and smooth.
[0043]
After the second resin 20 is applied and cured, the lid 8 is provided on the base 5.
[0044]
The light emitting device 200 can be manufactured through the above steps.
[0045]
<Different embodiments>
FIG. 5 is a schematic cross-sectional view showing a light-emitting device according to another embodiment of the present invention. Since the light emitting device 300 has substantially the same configuration except for the inside of the light emitting device 100 and the concave portion 5a, the same reference numerals are used where the same configuration is adopted.
[0046]
The light emitting element 1 placed in the recess 5 a is covered with the first resin 10. Furthermore, the upper surface of the first resin 10 is covered with the second resin 21. The first resin 10 contains the phosphor 30 uniformly dispersed therein. Similarly to the above, the first resin 10 is applied to cover the light emitting element 1. After coating the first resin 10, the second resin 21 is applied to cover the first resin 10.
[0047]
The second resin 21 fills the recess of the first resin 10, and forms a shape that matches the shape of the first resin 10 on the upper surface of the second resin 21. The second resin 21 includes a bottom surface portion and a side surface portion, and the bottom surface portion preferably has a planar shape. This planar shape is preferably substantially parallel to the bottom surface of the recess 5a. The second resin 21 is preferably made of the same material as that of the first resin 10, but a different material can also be used. This is because the adhesiveness and familiarity between the first resin 10 and the second resin 21 can be improved by using the same material. Since the second resin 21 is not in direct contact with the light emitting element 1, the heat generated in the light emitting element 1 is not directly transmitted to the second resin 21, and even if a resin having a lower heat resistance than varnish is used, the heat is generated. No degradation occurs. In other words, since resin generally has higher thermal resistance than metal, it is difficult for heat to be transmitted to the second resin by the first resin, and therefore, heat is dissipated through the eutectic part of the die that easily conducts heat. is there.
[0048]
The manufacturing method of the light emitting device 300 is substantially the same as the manufacturing method of the light emitting device 100 except that the second resin 21 is provided.
[0049]
The first resin 10 is poured into the recess 5a of the base 5 on which the light emitting element 1 is placed. After the first resin 10 is heated, dried and cured, the second resin 21 is poured onto the first resin 10. The second resin 21 is also poured so that bubbles do not enter the interface between the first resin 10 and the second resin 21. The 1st resin 10 has comprised the shape corresponding to the recessed part 5a after hardening. The second resin 21 is heated, dried and cured. The second resin 21 uses a resin having a high volume shrinkage rate to make the surface of the bottom surface of the second resin 21 flat and smooth. As described above, the second resin 21 can also efficiently extract light emitted from the upper surface of the light emitting element 1 by thinning the upper surface portion of the light emitting element 1.
[0050]
However, the second resin 21 can be coated on the first resin 10 before the first resin 10 is cured. After coating the second resin 21, the first resin 10 and the second resin 21 can be cured simultaneously. Thereby, the interface between the first resin 10 and the second resin 21 can be eliminated, and reflection at the interface can be eliminated. By adopting this coating and curing method, the second resin 21 not containing the phosphor 30 can be provided on the first resin 10 containing the phosphor 30.
[0051]
After the second resin 21 is applied and cured, the lid 8 is provided on the base 5.
[0052]
The light emitting device 300 can be manufactured through the above steps.
[0053]
<Different embodiments>
FIG. 6 is a schematic cross-sectional view showing a light emitting device according to another embodiment of the present invention. Since the light emitting device 400 has substantially the same configuration except for the inside of the light emitting device 100 and the concave portion 5a, the same reference numerals are used where the same configuration is adopted.
[0054]
The light emitting element 1 placed in the recess 5 a is covered with the first resin 10. Furthermore, the upper surface of the first resin 10 is covered with the second resin 21. The first resin 10 contains the phosphor 30 uniformly dispersed therein. The second resin 21 contains phosphors 31 that are uniformly dispersed. Similarly to the above, the first resin 10 is applied to cover the light emitting element 1. After coating the first resin 10, the second resin 21 is applied to cover the first resin 10.
[0055]
The second resin 21 fills the recess of the first resin 10, and forms a shape that matches the shape of the first resin 10 on the upper surface of the second resin 21. The second resin 21 includes a bottom surface portion and a side surface portion, and the bottom surface portion preferably has a planar shape. This planar shape is preferably substantially parallel to the bottom surface of the recess 5a. The second resin 21 is preferably made of the same material as that of the first resin 10, but a different material can also be used.
[0056]
The second resin 21 contains a phosphor 31. The phosphor 31 contained in the second resin 21 may be of the same type as the phosphor 30 contained in the first resin 10, but a different type is preferred. This is because a light-emitting device that emits light in multiple colors can be provided by variously changing the phosphor. For example, when the light emitting element 1 that emits ultraviolet rays is used, the phosphor 30 in the first resin 10 emits blue light due to the ultraviolet rays, and the phosphor 31 in the second resin 21 is yellow due to the blue light. It is possible to provide a light emitting device 400 that emits white light and emits white light by using these mixed color lights. On the other hand, when the light emitting element 1 that emits blue light is used, the phosphor 30 in the first resin 10 emits yellow-red light by the blue light, and the blue light of the light emitting element 1 causes the phosphor 30 in the second resin 21 to emit light. When the phosphor 31 emits yellow light, it is possible to provide a light emitting device 400 having a color temperature of 2000 to 6000 K close to a light bulb color and improved in color rendering by these mixed color lights.
[0057]
Since the manufacturing method of the light emitting device 400 is substantially the same as the manufacturing method of the light emitting device 300, a description thereof will be omitted.
[0058]
Hereafter, each structure in embodiment of this invention is explained in full detail.
[0059]
<Light emitting element>
In the present invention, the light-emitting element 1 is not particularly limited, and is not limited to a light-emitting element that emits red or green light. A light-emitting element that emits blue light can also be used. Further, not only these light emitting elements that emit visible light but also light emitting elements that emit light in the ultraviolet region from the short wavelength region of visible light, for example, light emitting devices that emit light in the ultraviolet region near 360 nm can be used. However, when a phosphor is used for the light emitting device 100, a semiconductor light emitting element having a light emitting layer capable of emitting a light emission wavelength capable of exciting the phosphor is preferable. Examples of such semiconductor light-emitting elements include various semiconductors such as ZnSe and GaN, but nitride semiconductors (In X Al Y Ga 1-XY N, 0 ≦ X, 0 ≦ Y, and X + Y ≦ 1) are preferable. If desired, the nitride semiconductor may contain boron or phosphorus. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a pn junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal. In addition, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed in a thin film in which a quantum effect is generated can be used.
[0060]
When a nitride semiconductor is used, materials such as sapphire, spinel, SiC, Si, ZnO, and GaN are preferably used for the semiconductor substrate. In order to form a nitride semiconductor with good crystallinity with high productivity, it is preferable to use a sapphire substrate. A nitride semiconductor can be formed on the sapphire substrate by MOCVD or the like. A buffer layer made of GaN, AlN, GaAIN or the like is formed on the sapphire substrate, and a nitride semiconductor having a pn junction is formed thereon.
[0061]
As an example of a light emitting device having a pn junction using a nitride semiconductor, a first contact layer formed of n-type gallium nitride, a first cladding layer formed of n-type aluminum nitride / gallium on a buffer layer, nitrided Examples include a double hetero structure in which an active layer formed of indium gallium, a second cladding layer formed of p-type aluminum nitride / gallium, and a second contact layer formed of p-type gallium nitride are sequentially stacked.
[0062]
Nitride semiconductors exhibit n-type conductivity without being doped with impurities. When forming a desired n-type nitride semiconductor, for example, to improve luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, etc. as an n-type dopant. On the other hand, when forming a p-type nitride semiconductor, the p-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped. Since nitride semiconductors are not easily converted to p-type by simply doping with a p-type dopant, it is preferable to reduce resistance by heating in a furnace or plasma irradiation after introducing the p-type dopant. After the electrodes are formed, a light emitting element made of a nitride semiconductor can be formed by cutting the semiconductor wafer into chips.
[0063]
In the light emitting device 100, in order to emit white light, the emission wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less in consideration of the complementary color relationship with the emission wavelength from the phosphor, the deterioration of the translucent resin, and the like. More preferably, it is 490 nm or less. In order to further improve the excitation and emission efficiency of the light emitting element and the phosphor, 450 nm or more and 475 nm or less are more preferable.
[0064]
For example, when the base body 5 is made of metal, deterioration of the constituent members due to ultraviolet rays can be suppressed. Therefore, the light emitting device 1 having the main light emission wavelength in the near-ultraviolet or ultraviolet region is used for the light emitting device 100, and a phosphor capable of absorbing a part of the light from the light emitting device 1 and emitting other wavelengths. By combining these, a color conversion light emitting device with little color unevenness can be obtained.
[0065]
The phosphor can be mixed in the window portion 7 or attached to the window portion 7. When making it adhere to the window part 7, it is preferable to use silica etc. which are resin or inorganic substance relatively resistant to ultraviolet rays.
[0066]
<Substrate>
The substrate 5 can be made of a hermetically sealable resin or metal. The base body 5 having a predetermined shape can be molded by placing the lead electrode or the like on a resin without using a predetermined mold and performing transfer molding. The base 5 is provided with a recess 5 in a portion where the light emitting element 1 is placed. The bottom surface portion 5b and the side surface portion 5c of the concave portion 5 are preferably provided with reflection surfaces so that the light from the light emitting element 1 can be reflected and emitted to the outside. Alternatively, the material of the substrate 5 can be molded from a resin having a high reflectance.
[0067]
The base 5 of the light emitting device 100 uses a metal material. By using a metal material, hermetic sealing can be performed more easily, and heat generated from the light emitting element 1 can be easily radiated to the outside.
[0068]
The base 5 used in the light emitting device 100 includes a concave portion 5a that houses the light emitting element 1 and a base portion on which the lead electrode 2 is disposed. The back surface of the recess 5a and the bottom surface of the lead electrode 2 are located on substantially the same plane. Thereby, the light emitting device 100 having high stability can be provided.
[0069]
In the light emitting device 100, it is preferable that the base 5 is formed thin in consideration of the heat dissipation of the heat generated from the light emitting element 1 and the downsizing of the base 5. On the other hand, in order to reduce the difference in coefficient of thermal expansion between the metal of the material of the base 5 and the insulating member 3 adjacent to the metal and improve the reliability, it is necessary to enlarge each contact surface, The substrate 5 is preferably formed thick. Therefore, in the base 5, the portion where the light emitting element 1 is disposed and the portion where the lead electrode 2 is fixed are separated, and the shape and thickness are set in accordance with the purpose in each region, thereby improving the reliability. Plan.
[0070]
Hereinafter, each component will be described in detail.
[0071]
<Concavity of base>
The base body 5 used in the light emitting device 100 has a concave portion 5a in which the light emitting element 1 is housed in the center and heat generated from the light emitting element 1 can be radiated well. The back surface of the recess 5a is located on the same plane as the mounting surface of the light emitting device 100, that is, the bottom surface of the lead electrode 2, and is configured to contact the surface of a mounting substrate (not shown). With this configuration, a light-emitting element is provided by providing a high thermal conductivity region separately from the wiring on the surface of the mounting substrate, and fixing the high thermal conductivity region and the back surface of the concave portion 5a with a conductive member. The heat generated from 1 can be directly radiated to the mounting substrate, and the amount of current dropped onto the light emitting element 1 can be increased to improve the output. Moreover, when providing the support body which has electroconductivity in the back surface of the base | substrate 1, it is preferable that the said support body adheres with the said high heat conductive area | region and a conductive member similarly to the said recessed part bottom face.
[0072]
The thickness of the bottom surface of the recess 5a is thinner than the base corresponding to the outer peripheral portion so as to have good heat dissipation. Thereby, a thermal resistance difference can be provided in the thin part and the thick part which is the base part, and heat can be efficiently radiated from the thin part. The film thickness of the thin wall portion which is the bottom surface of the recess is preferably 0.05 mm to 0.2 mm, more preferably 0.05 mm to 0.1 mm. The bottom surface of the recess set in this way is preferable because of its low thermal resistance. As described above, the light emitting device 100 can directly radiate the heat generated from the light emitting element 1 to the mounting substrate through a heat radiation path shorter than the region where the thermal resistance is set to be low from the outside, thereby realizing low thermal resistance. Yes. Moreover, the thin-walled main surface that is the bottom surface of the concave portion 5a is substantially parallel to the thick-walled main surface that is the base portion, and the inner wall of the concave portion that is the boundary main surface is bent. Thereby, the thermal resistance difference of the said thin part and the said thick part becomes large, and can further improve heat dissipation.
[0073]
The concave portion 5a is preferably located at the center of the light emitting device 100, whereby good directivity can be obtained. However, the recess 5 a can be provided at the corner of the light emitting device 100. Further, two or more recesses 5a can be provided by using the rectangular base body 5, and the recesses 5a can be provided at desired positions.
[0074]
Moreover, it is preferable that the recessed part 5a has a volume which can accommodate the said light emitting element 1 whole. Thereby, the light emitted from the four side surfaces of the light emitting element 1 can be reflected by the side surface portion 5c of the concave portion 5a, and can be extracted well in the front direction. Thereby, it is possible to improve light emission unevenness and color unevenness particularly seen in the light emitting element 1 made of a nitride semiconductor. Further, when the wavelength of the light emitting element 1 is converted using the color conversion layer, the entire light emitting element 1 disposed in the recess 5a can be easily covered with the color conversion layer.
[0075]
The recess 5a of the base 5 has a bottom surface portion 5b and a side surface portion 5c extending from the bottom surface portion 5b. In the recess 5a, the opening area of the opening portion is preferably larger than the bottom area of the bottom surface portion. In particular, a truncated cone as viewed from the opening direction of the recess 5a is preferable in terms of directivity control. Further, a polygonal frustum such as a triangular frustum or a quadrangular frustum can be used. Further, a curved shape such as a hemispherical shape or a semi-elliptical spherical shape can be used. By making the concave portion 5a into a curved shape, the light condensing property can be enhanced. From the viewpoint of light extraction, it is preferable that the opening of the recess 5a has a wide opening.
[0076]
The base 5 is made of a metal material, and in particular, the heat dissipation of the recess 5a in which the light emitting element 1 is disposed is enhanced. Therefore, the member of the resin 10 is not limited to an inorganic material, and an organic material can be used. The organic matter hardly deteriorates due to the above, and good optical characteristics can be obtained.
[0077]
On the other hand, the back surface of the concave portion 5a on the outer wall side has an inverted convex shape, and preferably has a groove between the back surface of the concave portion 5a and the bottom surface of the lead electrode 2, thereby mounting on the mounting substrate. At this time, it is possible to prevent a short circuit from occurring between the respective lead electrodes 2, and it is possible to mount them with high reliability and goodness. In the absence of the groove, the solder attached to the bottom surface of the lead electrode 2 may adhere to the adjacent base portion and the like, and insulation between the electrodes may not be removed, resulting in a short circuit.
[0078]
The recess 5a is configured by, for example, drawing a metal flat plate. In the present embodiment, drawing processing is performed from the main surface direction of the metal flat plate, and the metal is flowed in the back surface direction to form the recess 5a. By configuring the flowing metal to be a part of the back surface of the recess 5a, the area of the mounting surface can be increased. Moreover, the film thickness of the bottom surface side of the side surface portion 5c of the recess 5a can be increased. Specifically, the thickness of the concave portion 5a constituting the mounting surface is such that the mounting portion of the light emitting element 1 whose main surface side is flat is thin, and the main surface side is a part of the side surface portion 5c of the concave portion 5a. The outer peripheral part of 1 mounting part is comprised thickly. Thereby, the heat dissipation is improved, and the mechanical strength of the substrate 5 is increased, which is preferable. Further, it becomes possible to mount with high accuracy, and preferable directivity characteristics can be obtained.
[0079]
<Base part>
In the present specification, a flat plate portion surrounding the recess 5a in the metal base 5 is defined as a base portion. The base portion has at least one through hole penetrating in the thickness direction. The through hole is for fixing the lead electrode 2, and the light emitting device 100 of the present embodiment has the two through holes. The respective through holes are provided to face each other with the recess 5a interposed therebetween, and the positive or negative lead electrode 2 is inserted into each inside via the insulating member 3. With this configuration, the light emitting element 1 can be disposed at the center between the lead electrodes, and good directivity can be obtained.
[0080]
Here, it is sufficient that at least one of the positive and negative lead electrodes 2 of the light emitting device 100 is inserted into the through hole of the base portion via the insulating member 3, and the other lead electrode 2 is connected to the metal base 5. It may be integrally molded. If comprised in this way, since it is comprised with the continuous material without the insulating member 3 from the light emitting element 1 arrangement | positioning surface of the recessed part 5a of the base | substrate 5 which is a heat generation source to the said other lead electrode 2, heat is generated. It is well dispersed and can dissipate heat well from the bottom surface of the recess 5a, the bottom surface of the other lead electrode 2, and the back surface therebetween.
[0081]
Further, in the light emitting device 100, the thickness of the base portion of the metal base 5 is larger than the thickness of the bottom surface of the recess 5a. The thickness of the base part is preferably 0.3 mm to 1.0 mm, more preferably 0.5 mm to 1.0 mm. If it is thinner than 0.3 mm, the strength of the entire substrate 5 is lowered. In addition, cracks may occur at the weld interface due to stress strain that occurs during welding with the lid, and if airtightness is incomplete in this way, moisture will enter the interior and the wires 4 and the light-emitting elements 1 will be corroded, reducing reliability. Resulting in. On the other hand, when the film thickness is 1.0 mm or more, it is difficult for a pulse current to be transmitted to the welding interface, which may result in incomplete sealing. In addition, the light emitting device becomes thicker and the cost increases.
[0082]
Moreover, it is preferable that the outer edge part of the said base part has a collar part along the base part bottom face. By comprising in this way, the base 5 end surface exposed by providing the said collar part, the inner wall of the lid 6 arrange | positioned at the light emission surface side, and the upper surface of the said collar part, and the said lid 6 upper surface match, these Can be easily positioned, and mass productivity is improved, which is preferable.
[0083]
The thermal expansion coefficient of the metal base 5 is preferably a value that is the same as or larger than the thermal expansion coefficient of the insulating member 3. In the former case, the members can be brought into thermal contact with each other without being damaged. In the latter case, the difference between these thermal expansion coefficients is 0.01 × 10 -4 / Deg or less, by making the contact area as large as possible, avoiding breakage due to the difference in thermal expansion coefficient, the metal base 5 is reasonably good due to the effect of the difference in thermal expansion coefficient. Even if the oxide film of the base material 1 is not provided on the inner wall of the through hole, the metal base 5 and the insulating member 3 can be brought into close contact with each other. As a result, the light emitting device 100 with a simplified work process and good productivity can be obtained.
[0084]
Moreover, it is preferable that the base material of the metal base 5 has a strong strength, whereby a thin base can be formed with high reliability. Examples of a preferable base material for the metal base 5 include kovar and iron. Kovar is an Fe—Ni—Co alloy and has a thermal expansion coefficient close to that of low-melting glass used for an insulating member, and thus can be hermetically sealed. It is preferable to apply Ag plating to the outermost surfaces of these base materials 1. With this configuration, the light reflection / scattering rate on the surface of the substrate is improved, and the Ag layer becomes a brazing material for welding, and the adhesion between the light emitting element 1, the wire 4 and the lid 6 and the metal substrate 5 main body is improved. Improved and preferred. Furthermore, when the main surface side of the substrate to which light from the light emitting element 1 is irradiated is plated with an Ag layer glossy, and only the portion of the Ag layer that is desired to improve adhesion to other members is plated with a matte surface, these The effect is multiplied.
[0085]
The metal substrate 5 used in the present invention is configured as described above, whereby the light emitting device 100 having high reliability can be obtained at low cost.
[0086]
<Lead electrode>
The light emitting device 100 includes positive and negative lead electrodes 2, at least one of which is integrally provided via the base portion of the metal base 5 and the insulating member 3. For example, a through hole is provided in the base portion, and the insulating member 3 is inserted into the through hole. The leading end portion of the lead electrode 2 protrudes from the surface of the base portion, and the bottom surface of the lead electrode 2 is positioned substantially on the same plane as the mounting surface side bottom surface of the recess 5a. However, the bottom surface of the lead electrode 2 may have a height different from the mounting surface side bottom surface of the recess 5a.
[0087]
The upper surface that is the connection surface of the wire 4 of the lead electrode 2 is 0.02 mm. 2 ~ 0.2mm 2 Preferably having an area in the range of 0.05 mm. 2 ~ 0.15mm 2 It is. By being configured in this manner, a light-emitting device with good wire bonding accuracy and a reduced size can be obtained.
[0088]
Further, when the bottom surface on the mounting surface side of the lead electrode 2 protrudes from the back surface of the base portion, the bottom surface can be configured to have a larger area than the top surface. With this configuration, the lead electrode 2 also serves as a support for the light emitting device 100 and can be stably surface-mounted, and the contact area with the mounting substrate is widened, so heat dissipation is improved. The The lead electrode 2 having such a shape can be obtained, for example, by pressing the bottom surface side of the lead electrode 2 formed in a columnar shape. Preferred shapes on the bottom surface side of the lead electrode 2 include an inverted T shape, a divergent shape, and an inverted taper type.
[0089]
<Lid>
The light emitting device 100 includes a lid body 8 having a light transmitting window portion 7 and a lid 6 made of a metal portion on the main surface side of the metal base 5. It is preferable that the window portion 7 is a light emitting surface of the light emitting device 100 and is arranged at the center.
[0090]
In the present embodiment, the window portion 7 is located on the upper surface of the light emitting element 1 disposed in the concave portion 5a of the metal base 5, and has an intersection with an extension line of the inner wall of the concave portion 5a. The light emitted from the side surface of the light emitting element 1 is reflected and scattered by the side surface portion 5c of the concave portion 5a and extracted in the front direction. It is considered that the range in which these reflected and scattered light exists is substantially within the extension line of the side surface portion 5c of the concave portion 5a. Therefore, by adjusting the area of the window 7 that is a light emitting surface as described above, the reflected scattered light is efficiently condensed on the window 7 and can emit light with high brightness. Is obtained.
[0091]
It is preferable that the base material of the lid 6 is similar in thermal expansion coefficient to the translucent member of the base body 5 and the window portion 7. Moreover, it is preferable that the surface of the material of the lid 6 has a Ni plating layer as a protective film of the substrate 5.
[0092]
For example, the lid 6 is hermetically insulated by sealing a glass and the lid body by placing a tablet-like glass in an opening formed in the lid body and passing through a furnace using a carbon sealing jig. Can be worn.
[0093]
The shape of the lid 6 is not particularly limited as long as it has a smooth flat surface that can be in close contact with the welded portion of the base body 5 and the base body 5 can be hermetically sealed. When the lid 6 having a convex center portion is used, the phosphor can be satisfactorily bonded to the back surface of the window portion 7 of the lid 6 and a light emitting device can be formed with a high yield. Further, when a flexible member is injected into the convex lid 6 and the light emitting element 1 electrically connected to the metal base 5 is inserted and integrated, a light emitting device having excellent heat stress can be obtained. .
[0094]
Furthermore, when the surface of the window portion 7 has a curved lens shape, the light convergence is good and a light emitting device having a high brightness in the front direction is obtained. For example, a fluorescent light that emits yellow light by absorbing a part of the blue light on the back surface thereof with a directivity angle set to about 45 degrees on a metal base 5 on which the light emitting element 1 that emits blue light is mounted. When a bullet side lens to which the body is fixed is placed, a miniaturized light emitting device capable of emitting a white beam with high brightness by mixing these colors can be obtained. Such a light-emitting device can be used for a flash application required for a drawing function provided in a small machine such as a mobile phone.
[0095]
<Resin>
FIG. 3 is a schematic view showing the contact angle of the resin. The contact angle θ of the resin does not include a phosphor.
[0096]
The resin 10 covers a part of the light emitting element 1. Since the light emitting device 100 is hermetically sealed by the base 5 and the lid 8, the resin 10 is used rather than being used for protecting the light emitting element 1 from an obstacle or moisture from the outside. The main purpose is to extract light from 1 efficiently. This is because a resin 10 is provided between the light emitting element 1 and air in order to suppress total reflection of light from the light emitting element 1 generated at the interface between the light emitting element 1 and air, and the light emitting element The light from 1 is transmitted through the resin 10 without being totally reflected and released into the air.
[0097]
The resin 10 is preferably applied to the inside of the recess 5a of the base 5 and forms a shape that matches the shape of the recess 5a. For example, when the opening part of the recessed part 5a has the shape of a wide-mouthed truncated cone, the resin 10 also has the shape of a truncated cone matching the inner surface of the recessed part 5a. For example, when the opening part of the recessed part 5a has the shape of a wide-open square pyramid, the resin 10 also has the shape of a square pyramid that matches the inner surface of the recessed part 5a. The top surface of the resin 10 on the bottom surface side in the recess 5a is preferably formed in a planar shape parallel to the bottom surface portion 5b of the recess 5a from the viewpoint of light extraction efficiency and color variation.
[0098]
As the resin 10, a gas having a higher refractive index than a gas hermetically sealed by the base 5 and the lid 8, for example, nitrogen, helium, or the like is used. This is to improve the light extraction efficiency. The gas that is hermetically sealed is preferably an inert gas such as nitrogen or helium so as not to corrode the metallic substrate 5 or the wire 4.
[0099]
The resin 10 preferably has a volume solid percentage of 70% or less. In particular, the volume solid percentage is preferably 30 to 60% by volume. As the resin 10 is cured, the organic solvent in the resin is volatilized and the volume shrinks. At this time, when the resin not containing the phosphor 30 and the resin containing the phosphor 30 are cured under the same conditions, the resin containing the phosphor 30 has a volume shrinkage. large. This is considered to be because the volatilization of the organic solvent is promoted. Thus, by using a resin having a small volume solid percentage, it is possible to provide the light emitting device 100 that matches the shape of the recess 5a. However, no wire breakage occurs due to the volume shrinkage. This is presumably because the thickness of the resin 10 is thin, the difference in internal stress is small, and the contact area between the resin 10 and the wire 4 is small.
[0100]
The resin 10 preferably has a contact angle of 60 ° or less. Further, when the side surface portion 5c of the recess 5a has a wider opening at the opening portion than the bottom surface portion 55b and the side surface portion 5c has a slope, the resin 10 slips from the side surface portion 5c of the recess 5c, for example, even in a tapered shape. It is preferable to have a viscosity that does not drop.
[0101]
The resin 10 is preferably a heat resistant resin.
[0102]
The resin 10 preferably has the phosphor 30 uniformly dispersed, and preferably has an appropriate viscosity. This is because when the viscosity of the resin 10 is high, it is difficult to apply the light emitting element 1 and the recess 5a of the substrate 5 in a predetermined amount. In addition, when the resin 10 is applied, the resin 10 may not go around the light emitting element 1. On the other hand, if the viscosity of the resin 10 is low, the phosphor 30 settles or floats until the resin 10 is cured, and cannot be uniformly dispersed in the resin.
[0103]
The second resins 20 and 21 are formed on the resin 10. The second resins 20 and 21 fill the dents in the resin 10. The top surfaces of the second resins 20 and 21 are preferably flat surfaces that are substantially parallel to the bottom surface of the recess 5a. In particular, it is preferable to cover the concave portion 5a with the second resin 20 up to a flat surface. For example, the upper surface of the second resin 20 is a flat surface by filling the recesses 5a and the recesses of the first resin 10 with a resin having a volume solid percentage or a weight solid percentage of 100% and having no volume shrinkage. Can be formed. Alternatively, the first resin 10 can be coated with the second resin 21 using a resin having a large volumetric shrinkage in which the volume solid percentage or the weight solid percentage is 30 to 80%. The material of the 2nd resin 20 and 21 is not specifically limited, Ordinary resin other than heat resistant resin can also be used.
[0104]
The second resins 20 and 21 are translucent in order to transmit light from the light emitting element 1. The phosphor 30 can also be contained in the second resins 20 and 21. At this time, the phosphor 30 of the resin 10 is preferably a phosphor having a main emission wavelength on the longer wavelength side than the phosphors of the second resins 20 and 21. This is because the luminous efficiency of the phosphor can be increased. On the other hand, when the phosphor 30 in the resin 10 is irradiated with a light emitting element that emits ultraviolet light as the light emitting element 1, it is excited by the ultraviolet light from the light emitting element 1 and emits blue light. The phosphor in the second resin 20, 21 is excited by the light of the phosphor 30 that emits blue light, and emits yellow light. Accordingly, it is possible to provide the light emitting device 100 that emits white light by the mixed light of the blue light and the yellow light. However, the phosphor is not limited to these, and can be used in various combinations.
[0105]
<Phosphor>
The light emitting device 100 is a light having a desired color tone by combining the light emitting element 1 and the phosphor 30 that can absorb at least a part of the light emitted from the light emitting element 1 and emit other light. Can be obtained. In addition, the phosphor 30 is compatible with other members such as a diffusing agent and a pigment, and these can be used in combination. These phosphors can be mixed in the resin 10 and the second resin 20 to obtain a desired emission color.
[0106]
Here, the phosphor used in this example will be described in detail.
[0107]
The light-emitting device uses a phosphor based on a cerium-activated yttrium-aluminum oxide phosphor capable of emitting light by exciting light emitted from a semiconductor light-emitting element having a nitride-based semiconductor as a light-emitting layer. Yes.
[0108]
As a specific yttrium aluminum oxide phosphor, YAlO 3 : Ce, Y 3 Al 5 O 12 : Ce (YAG: Ce) or Y 4 Al 2 O 9 : Ce, and also a mixture thereof. The yttrium / aluminum oxide phosphor may contain at least one of Ba, Sr, Mg, Ca, and Zn. Moreover, by containing Si, the reaction of crystal growth can be suppressed and phosphor particles can be aligned.
[0109]
In this specification, the yttrium-aluminum oxide phosphor activated with Ce is to be interpreted in a broad sense, and part or all of yttrium is selected from the group consisting of Lu, Sc, La, Gd and Sm. Or a part or all of aluminum is used in a broad sense including a phosphor having a fluorescent action in which any one or both of Ba, Tl, Ga, and In are substituted.
[0110]
More specifically, the general formula (Y z Gd 1-z ) Three Al Five O 12 : Photoluminescence phosphor represented by Ce (where 0 <z ≦ 1) or a general formula (Re 1-a Sm a ) Three Re ' Five O 12 : Ce (where 0 ≦ a <1, 0 ≦ b ≦ 1, Re is at least one selected from Y, Gd, La, Sc, and Re ′ is at least one selected from Al, Ga, In) The photoluminescence phosphor shown in FIG.
[0111]
Since this phosphor has a garnet structure (garnet-type structure), it is resistant to heat, light, and moisture, and the peak of the excitation spectrum can be made around 450 nm. The emission peak is also in the vicinity of 580 nm and has a broad emission spectrum that extends to 700 nm.
[0112]
Further, the photoluminescence phosphor can increase the excitation light emission efficiency in a long wavelength region of 460 nm or more by containing Gd (gadolinium) in the crystal. As the Gd content increases, the emission peak wavelength shifts to a longer wavelength, and the entire emission wavelength also shifts to the longer wavelength side. That is, when a strong reddish emission color is required, it can be achieved by increasing the amount of Gd substitution. On the other hand, as Gd increases, the emission luminance of photoluminescence by blue light tends to decrease. Furthermore, in addition to Ce, Tb, Cu, Ag, Au, Fe, Cr, Nd, Dy, Co, Ni, Ti, Eu, and the like can be contained as desired.
[0113]
Moreover, in the composition of the yttrium / aluminum / garnet (garnet) phosphor having a garnet structure, the emission wavelength is shifted to the short wavelength side by substituting part of Al with Ga. Further, by substituting part of Y in the composition with Gd, the emission wavelength is shifted to the longer wavelength side.
[0114]
When substituting a part of Y with Gd, it is preferable that the substitution with Gd is less than 10%, and the Ce content (substitution) is 0.03 to 1.0. If the substitution with Gd is less than 20%, the green component is large and the red component is small. However, by increasing the Ce content, the red component can be supplemented and a desired color tone can be obtained without lowering the luminance. With such a composition, the temperature characteristics are good and the reliability of the light emitting diode can be improved. In addition, when a photoluminescent phosphor adjusted to have a large amount of red component is used, a light emitting device capable of emitting an intermediate color such as pink can be formed.
[0115]
Such photoluminescent phosphors use oxides or compounds that easily become oxides at high temperatures as raw materials for Y, Gd, Al, and Ce, and mix them well in a stoichiometric ratio. Get raw materials. Alternatively, a mixed raw material obtained by mixing a coprecipitation oxide obtained by firing a solution obtained by coprecipitation of a solution obtained by dissolving a rare earth element of Y, Gd, and Ce in an acid in a stoichiometric ratio with oxalic acid and aluminum oxide. Get. An appropriate amount of fluoride such as barium fluoride or ammonium fluoride is mixed as a flux and packed in a crucible, and baked in air at a temperature range of 1350 ° C. to 1450 ° C. for 2 to 5 hours to obtain a fired product, and then fired. The product can be obtained by ball milling in water, washing, separating, drying and finally passing through a sieve.
[0116]
In the light emitting device of the present invention, such a photoluminescent phosphor may be a mixture of yttrium, aluminum, garnet (garnet type) phosphor activated with two or more kinds of cerium, and other phosphors. .
[0117]
The particle size of the phosphor used in the present invention is preferably in the range of 1 μm to 50 μm, more preferably 3 μm to 30 μm. A phosphor having a particle size smaller than 3 μm is relatively easy to form an aggregate, and becomes densely settled in the liquid resin, so that the light transmission efficiency is reduced. In the present invention, by using a phosphor that does not have such a phosphor, light concealment by the phosphor is suppressed and the output of the light emitting device is improved. In addition, the phosphor having a particle size range of the present invention has high light absorption and conversion efficiency and a wide excitation wavelength range. Thus, by including a large particle size phosphor having optically excellent characteristics, light around the dominant wavelength of the light emitting element can be converted and emitted well, and the mass productivity of the light emitting device is improved. Is done.
[0118]
Here, in the present invention, the particle size is a value obtained from a volume-based particle size distribution curve. The volume-based particle size distribution curve is obtained by measuring the particle size distribution by a laser diffraction / scattering method. Specifically, in an environment of an air temperature of 25 ° C. and a humidity of 70%, hexametalin having a concentration of 0.05%. Each substance was dispersed in an aqueous sodium acid solution and measured with a laser diffraction particle size distribution analyzer (SALD-2000A) in a particle size range of 0.03 μm to 700 μm. In this volume-based particle size distribution curve, it is a particle size value when the integrated value is 50%, and the center particle size of the phosphor used in the present invention is preferably in the range of 3 μm to 30 μm. Moreover, it is preferable that the fluorescent substance which has this center particle size value is contained with high frequency, and the frequency value is preferably 20% to 50%. By using a phosphor having a small variation in particle size in this way, a light emitting device having a good color tone can be obtained with reduced chromaticity variation for each product.
[0119]
The phosphor 30 is preferably dispersed uniformly in the resin 10, but the phosphor 30 may be precipitated in the resin 10. The phosphor 30 is preferably disposed in the vicinity of the light emitting element 1 from the viewpoint of light extraction. In addition, the color tone can be determined with a small amount of phosphor.
[0120]
Moreover, it is not restricted to the said YAG fluorescent substance, Various fluorescent substance can be used. For example, M 2 Si 5 N 8 : Eu (M is an alkaline earth metal such as Ca, Sr, Ba) or MSi 2 O 2 N 2 : Eu (M is an alkaline earth metal such as Ca, Sr, Ba), La 2 O 2 S: Eu, SrAl 2 O 4 : R, M 5 (PO 4 ) 3 X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is at least one selected from F, Cl, Br, I. R is Eu. , Mn, or any one of Eu and Mn).
[0121]
Other phosphors can also include alkaline earth metal silicates activated with europium. The alkaline earth metal silicate is preferably an alkaline earth metal orthosilicate represented by the following general formula.
(2-xy) SrO.x (Ba, Ca) O. (1-abbcd) SiO 2 ・ AP 2 O 5 bAl 2 O 3 cB 2 O 3 dGeO 2 : YEu 2+ (Where 0 <x <1.6, 0.005 <y <0.5, 0 <a, b, c, d <0.5).
(2-xy) BaO.x (Sr, Ca) O. (1-abbcd) SiO 2 ・ AP 2 O 5 bAl 2 O 3 cB 2 O 3 dGeO 2 : YEu 2+ (In the formula, 0.01 <x <1.6, 0.005 <y <0.5, 0 <a, b, c, d <0.5.)
Here, preferably, at least one of the values of a, b, c and d is greater than 0.01.
[0122]
The light-emitting device in the present embodiment is a phosphor composed of an alkaline earth metal salt. In addition to the alkaline earth metal silicate described above, alkaline earth metal aluminate or Y activated by europium and / or manganese is used. (V, P, Si) O 4 : Eu, or an alkaline earth metal-magnesium-disilicate represented by the following formula:
Me (3-xy) MgSi 2 O 3 : XEu, yMn (in the formula, 0.005 <x <0.5, 0.005 <y <0.5, Me represents Ba and / or Sr and / or Ca)
Next, the manufacturing process of the phosphor made of alkaline earth metal silicate in the present embodiment will be described.
[0123]
For the production of alkaline earth metal silicates, the stoichiometric amounts of the starting materials alkaline earth metal carbonate, silicon dioxide and europium oxide are intimately mixed according to the selected composition and the phosphor is produced. In a conventional solid reaction, the desired phosphor is converted at a temperature of 1100 ° C. and 1400 ° C. under a reducing atmosphere. At this time, it is preferable to add less than 0.2 mol of ammonium chloride or other halide. If necessary, part of silicon can be replaced with germanium, boron, aluminum, and phosphorus, and part of europium can be replaced with manganese.
[0124]
Phosphors as described above, ie alkaline earth metal aluminates and Y (V, P, Si) O activated with europium and / or manganese. 4 : Eu, Y 2 O 2 S: Eu 3+ By combining one of these phosphors or these phosphors, an emission color having a desired color temperature and high color reproducibility can be obtained, as shown in the following examples.
[0125]
<Diffusion agent>
In the present invention, the resin 10 and the second resin 20 may contain a diffusing agent in addition to the phosphor 30. By containing a diffusing agent, there are a light diffusion effect, a thickening effect, a stress diffusion effect, and the like. As a specific diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide or the like is preferably used. As a result, a light emitting device having good directivity can be obtained.
[0126]
The diffusing agent is one having a center particle diameter of 1 nm or more and less than 5 μm. A diffusing agent having a center particle diameter of about 400 nm or more can diffuse light from the light emitting element and the phosphor well, and can suppress color unevenness that tends to occur when a phosphor having a large particle diameter is used. On the other hand, a diffusing agent having a center particle diameter of less than about 400 nm has a low interference effect on the light wavelength from the light emitting element, and thus has high transparency, and can increase the resin viscosity without reducing the light intensity. As a result, when the color conversion member is arranged by potting or the like, it becomes possible to disperse the phosphor in the resin almost uniformly and maintain the state in the syringe, and the fluorescent light having a large particle size that is relatively difficult to handle. Even when the body is used, it is possible to produce with good yield. Thus, the action of the diffusing agent in the present invention varies depending on the particle size range, and can be selected or combined according to the method of use.
[0127]
<Filler>
Furthermore, in the present invention, the resin 10 and the second resin 20 may contain a filler in addition to the phosphor 30. The specific material is the same as that of the diffusing agent, but the diffusing agent has a central particle size different from that of the diffusing agent. When the filler having such a particle size is contained in the translucent resin, the chromaticity variation of the light emitting device is improved by the light scattering action. In addition, the thermal shock resistance of the translucent resin can be enhanced by using a filler having a particle size of 1 μm or more. As a result, even when used at high temperatures, it is possible to prevent disconnection of the wire that electrically connects the light emitting element and the external electrode, separation from the bottom surface of the light emitting element and the bottom surface of the concave portion of the substrate, etc. A light emitting device is obtained. Furthermore, the fluidity of the resin can be adjusted to be constant for a long time, and a sealing member can be formed in a desired place, and mass production can be performed with a high yield.
[0128]
The filler preferably has a particle size and / or shape similar to that of the phosphor. Here, in the present specification, the similar particle diameter means a case where the difference in the central particle diameter of each particle is less than 20%, and the similar shape means an approximate degree of each particle diameter with a perfect circle. This represents a case where the difference in the value of the degree of circularity (circularity = perimeter length of a perfect circle equal to the projected area of the particle / perimeter length of the projected particle) is less than 20%. By using such a filler, the phosphor and the filler interact with each other, the phosphor can be favorably dispersed in the resin, and color unevenness is suppressed. Furthermore, it is preferable that both the phosphor and the filler have a center particle size of 15 μm to 50 μm, more preferably 20 μm to 50 μm. Thus, by adjusting the particle size, a preferable interval is provided between the particles. be able to. As a result, a light extraction path is ensured, and the directivity can be improved while suppressing a decrease in luminous intensity due to filler mixing.
[0129]
【Example】
<Examples 1 to 3>
FIG. 4 is a schematic cross-sectional view illustrating the light emitting device 200 according to the first to third embodiments. FIG. 7 is an enlarged schematic plan view showing a mounting portion of the light emitting element in the light emitting device according to the embodiment of the present invention. FIG. 8 is an enlarged schematic plan view showing a mounting portion of the light emitting element in the light emitting device of the comparative example. As shown in FIG. 7, in the light emitting devices of Examples 1 to 3, the phosphors 30 are uniformly dispersed in the resin 10. On the other hand, as shown in FIG. 8, in the light emitting device of Comparative Example 1, the phosphor is not contained in the resin 10. Bubbles are generated in the resin 10.
[0130]
As the light emitting element 1, a blue light emitting element having a main emission wavelength in the vicinity of 460 nm was used.
[0131]
The concave portion 5a of the base body 5 has a truncated cone shape having a wide opening on the upper surface of the opening, which includes a bottom surface portion 5b and a side surface portion 5c.
[0132]
As the resin 10, silicone (trade name: Alemco Seal 529 (manufactured by Alemco Products Co., Ltd.)) was used. The silicone has a volume solids percentage of 50.0%, a weight solids percentage of 54.0%, a mixed viscosity of 100-300 cps, a volatility of 4.20 lbs / gal, and a specific gravity of 1.02 g / cc.
[0133]
Silicone (trade name: Silicone KJR-9023 (manufactured by Shin-Etsu Chemical Co., Ltd.)) was used as the second resin 20. The silicone was 100% by weight solids, the mixing viscosity was 4000 cps, and the mixing ratio of the main agent and the auxiliary agent was 100. : 10, JIS-A hardness 22
[0134]
The phosphor 30 contained in the resin 10 is (Y 0.8 Gd 0.2 ) Three Al Five O 12 : A so-called YAG phosphor of Ce is used.
[0135]
Example 1 contains 10% by weight of YAG phosphor with respect to the silicone. Example 2 contains 20% by weight of YAG phosphor with respect to the silicone. Example 3 contains 30% by weight of YAG phosphor relative to the silicone. In contrast, Comparative Example 1 is only the silicone.
[0136]
Table 1 shows the results of measuring the contact angles and formulation viscosities of Examples 1 to 3 and Comparative Example 1. The contact angle was measured three times, and the average value was examined.
[0137]
[Table 1]
[0138]
In Examples 1 to 3 and Comparative Example 1, a light emitting device 200 was manufactured by the following manufacturing method.
[0139]
The light emitting element 1 is placed on the base 5 provided with the recess 5a. The light emitting element 1 was die-bonded to the bottom surface portion 5b of the concave portion 5a of the base 5 using Au—Sn eutectic bonding. After the light emitting element 1 was die-bonded, the electrode portion of the light emitting element 1 and the lead electrode 2 provided on the substrate 5 were wire-bonded to make an electrical connection.
[0140]
A resin 10 in which the phosphors 30 are uniformly dispersed in advance is poured into the recess 5a of the base body 5 on which the light emitting element 1 formed in this way is placed. As the phosphor 30, the YAG phosphor described above was used. A predetermined amount of the phosphor 30 was weighed and uniformly dispersed in the resin 10. Three preparation amounts of the phosphor 30 in Examples 1 to 3 were prepared with respect to the resin 10 such as 10 wt%, 20 wt%, and 30 wt%. As the resin 10, the above silicone was used. Since the resin 10 is easy to volatilize, after weighing a predetermined amount, the phosphor 30 was mixed and rapidly stirred. The phosphors 30 were poured so as not to enter the gaps between the resin 10 in which the phosphors 30 were uniformly dispersed and the recesses 5a. In Examples 1 to 3 and Comparative Example 1, the sample was poured to the upper end of the recess 5a so as not to flow out of the recess 5a of the base 5.
[0141]
After the resin 10 was poured into the recess 5a, the organic solvent was volatilized. Since the organic solvent to be volatilized contains harmful substances, the organic solvent was volatilized while evacuating for 24 hours in a fume hood with an exhaust system.
[0142]
Next, the 2nd resin 20 was potted in the recessed part of the resin 10 of the recessed part 5a. The second resin 20 was potted to a position where it was almost the same height as the upper end of the recess 5a. The upper surface of the second resin 20 is a plane parallel to the bottom surface portion 5b of the recess 5a. In addition, the 2nd resin 20 mixes a main ingredient and an auxiliary agent in the ratio of 100: 10 previously, and defoams.
[0143]
Then, it heated up from normal temperature to 90 to 95 degreeC over 1 hour. After maintaining at 90 ° C. to 95 ° C. for about 2 hours, the temperature was further increased to 170 ° C. to 185 ° C. over 1 hour. After holding at 170 ° C. to 185 ° C. for about 1 hour, the temperature was slowly lowered to room temperature.
[0144]
Finally, a lid 8 having a window portion 7 and a lid 6 was provided on the base 5 for hermetic sealing. The hermetic sealing was performed in nitrogen. After the lid 8 was provided on the base 5 using a welding machine, the contact portion was sealed in order to hermetically seal.
[0145]
The light emitting device 200 of Examples 1 to 3 was manufactured through the above steps. A light emitting device of Comparative Example 1 was manufactured under the same conditions except that the phosphor 30 was not contained.
[0146]
In the recess 5a of the substrate 5, the resin 10 is transferred to the recess 5a. Sign The shape to make. The resin 10 includes a bottom surface portion and a side surface portion. The bottom surface portion of the resin 10 is parallel and flat to the bottom surface portion 5b of the recess 5a, and the side surface portion of the resin 10 is parallel and smooth to the side surface portion 5c of the recess 5a. It is a simple curved surface.
[0147]
The upper surface 10 a of the resin 10 on the light emitting element 1 is substantially the same height as the upper surface 10 b of the resin 10 in the peripheral portion of the light emitting element 1. The film thickness of the upper surface 10a of the resin 10 on the light emitting element 1 is thinner than the film thickness of the resin 10 on the peripheral portion 5c of the light emitting element 1. The resin 10c on the side surface of the recess 5a of the base 5 covers the side surface 5c of the recess 5a with a substantially uniform thickness. The resin 10 had a volume shrinkage of about 50% by volume with respect to that before curing.
[0148]
Table 2 shows the color tones of Examples 1 to 3 and Comparative Example 1 obtained from the above steps.
[0149]
[Table 2]
[0150]
If the blending amount of the phosphor 30 in the resin 10 is small, a large amount of resin is required, and it is difficult to adjust to a desired color tone. On the other hand, when the blending amount of the phosphor 30 in the resin 10 is large, the desired color tone can be adjusted with a small amount of resin.
[0151]
<Thermal shock test>
A thermal shock test was performed on Examples 1 to 3 and Comparative Example 1.
[0152]
The thermal shock test is performed by the following method. First, prepare two containers, put a solution of −40 ° C. in one container, and put a solution of 100 ° C. in the other container. The light emitting device 200 is alternately immersed in each of the two containers for 1 minute. 1000 cycles are performed, where one cycle is immersed in each of the two containers.
[0153]
As a result, as shown in the drawing, in the light emitting device of Comparative Example 1, bubbles 40 were generated in the resin 10 in the recess 5a of the base 5. The generation of the bubbles 40 of the resin 10 is considered to be caused by the sudden temperature difference in the organic solvent remaining in the resin 10.
[0154]
On the other hand, none of the light emitting devices of Examples 1 to 3 had a predetermined color tone because no bubbles were generated in the resin 10 in the recess 5a of the base body 5.
[0155]
Thus, if the phosphor 30 is not contained in the resin 10, the organic solvent in the resin is difficult to volatilize, and a part of the organic solvent remains. Due to the residual organic solvent, bubbles 40 are generated, resulting in color variation. On the other hand, when the phosphor 30 is contained in the resin 10, the organic solvent in the resin is easily volatilized, and the organic solvent does not remain. Since there is no residual organic solvent, no bubbles are generated and color variation does not occur.
[0156]
<Examples 4 to 6>
In Examples 4 to 6, light emitting devices were manufactured under the same conditions except that the resin 10 was changed. Therefore, the description of the same conditions is omitted.
[0157]
FIG. 9 is an enlarged schematic plan view showing a mounting portion of the light emitting element in the light emitting device of the comparative example. The light emitting device of the comparative example uses a resin having a resin contact angle larger than 60 degrees.
[0158]
As the resin 10, an epoxy resin (trade name: EpiFine 6673 / EpiFine H-215 (manufactured by Fine Polymers)) was used.
[0159]
Example 4 contains 10% by weight of YAG phosphor with respect to the epoxy resin. Example 5 contains 20% by weight of YAG phosphor with respect to the epoxy resin. Example 6 contains 30% by weight of YAG phosphor with respect to the epoxy resin. On the other hand, Comparative Example 2 is only the epoxy resin.
[0160]
Table 3 shows the results of measuring the contact angles and formulation viscosities of Examples 4 to 6 and Comparative Example 2. The contact angle was measured three times, and the average value was examined.
[0161]
[Table 3]
[0162]
When the YAG phosphor is mixed into the epoxy resins of Examples 4 to 6, the contact angle increases by about 3 degrees, and the viscosity increases.
[0163]
As a result, Examples 4 to 6 were able to produce a light-emitting device with high thermal shock and no color variation. When the contact angle is 60 degrees or less, the resin wraps around the light emitting element 1 when potting the resin 10 into the recess 5a. On the other hand, when the contact angle is larger than 60 degrees, the resin does not enter the peripheral portion of the light emitting element 1 well, and a portion 5e where a part of the recess 5a is not covered is generated. As a result, color variation from the light emitting device occurs. However, the resin can be made to wrap around the light emitting element 1 by adjusting the compounding viscosity of the resin or changing the coating method.
[0164]
【The invention's effect】
As described above, the present invention can prevent deterioration of the sealing resin due to heat or light emitted from the light emitting element. That is, by including a phosphor in the sealing resin, it is possible to promote the volatilization of the organic solvent of the sealing resin and to eliminate the residual organic solvent. Thereby, generation | occurrence | production of the bubble accompanying the volatilization of the organic solvent after hardening can be eliminated, and color variation can be reduced. In addition, a light-emitting device with high light extraction efficiency can be provided. Moreover, a varnish can be used for sealing resin. The varnish can suppress the influence from the solvent by mixing the phosphor. In addition, it is possible to provide a sealing resin and a light-emitting device that hardly cause thermal degradation. In addition, the manufacturing process can be simplified. Further, by using a large amount of the phosphor in the resin, the concave portion of the base can be covered with a small amount of resin, and a desired color tone can be adjusted. Thus, the present invention has important technical significance.
[Brief description of the drawings]
FIG. 1A is a schematic plan view showing a light emitting device according to an embodiment of the present invention. (B) is a schematic sectional drawing which shows the light-emitting device concerning embodiment of this invention.
FIG. 2 is an enlarged schematic cross-sectional view of a concave portion of a base in the light emitting device according to the embodiment of the present invention.
FIG. 3 is a schematic view showing a contact angle of a resin.
FIG. 4 is a schematic cross-sectional view showing a light emitting device according to another embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view showing a light emitting device according to another embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view showing a light emitting device according to another embodiment of the present invention.
FIG. 7 is an enlarged schematic plan view showing a mounting portion of the light emitting element in the light emitting device according to the embodiment of the present invention.
FIG. 8 is an enlarged schematic plan view showing a mounting portion of a light emitting element in a light emitting device of a comparative example.
FIG. 9 is an enlarged schematic plan view showing a mounting portion of a light emitting element in a light emitting device of a comparative example.
FIG. 10 is an enlarged schematic cross-sectional view showing a mounting portion of a light emitting element in a conventional light emitting device.
[Explanation of symbols]
1 Light emitting element
2 Lead electrode
3 Insulating material
4 wires
5 Base
5a recess
5b Bottom of recess
5c Side surface of recess
5d Peripheral part of light emitting element
6 Lid
7 windows
8 Lid
10 Resin
10a Top surface of resin on light emitting element
10b The upper surface of the resin in the peripheral portion of the light emitting element
10c Resin on side surface of concave portion of base
20, 21 Second resin
30, 31 Phosphor
40 bubbles
100, 200, 300, 400 Light emitting device

Claims (9)

  1. A light emitting element;
    A substrate on which the light emitting element is mounted;
    A lid provided on the base for hermetically sealing the light emitting element;
    A light emitting device comprising:
    The base has a concave shape, and the concave portion has a bottom surface portion and a side surface portion extending from the bottom surface. The concave portion has an opening area of an opening portion and a bottom area of the bottom surface portion. Larger than the bottom surface of the recess, the light emitting element is placed,
    At least a part of the light-emitting element is coated with a light-transmitting resin, and the resin is a silicone resin having a volume solid content percentage of 30% to 70% by volume containing a phosphor, and the resin. Corresponds to the shape of the recess in the recess.
  2.   The light emitting device according to claim 1, wherein the resin has a contact angle of 60 ° or less.
  3.   The light emitting device according to claim 1, wherein the phosphor is uniformly dispersed in the resin.
  4.   The light emitting device according to claim 1, wherein the concave portion has a reflective surface formed on a side surface portion.
  5.   5. The light emitting device according to claim 1, wherein the resin covers a side surface portion of the concave portion of the base body to a bottom surface portion of the concave portion of the base body and a side surface and an upper surface of the light emitting element. The light-emitting device as described in any one.
  6.   The light emitting device is characterized in that the thickness of the resin on the upper surface of the light emitting element is thinner than the thickness of the resin on the bottom surface of the concave portion of the base in the peripheral portion of the light emitting element. The light emitting device according to at least one of 1 to 5.
  7.   7. The light emitting device according to claim 1, wherein an upper surface of the resin in a peripheral portion of the light emitting element has substantially the same height as an upper surface of the resin on the light emitting element. The light emitting device according to one item.
  8.   8. The light emitting device according to claim 1, wherein the upper surface of the resin on the bottom surface side of the concave portion of the base has a flat portion substantially parallel to the bottom surface of the concave portion of the base. The light emitting device according to at least one of the above.
  9.   9. The light emitting device according to claim 1, wherein the resin is coated with a substantially uniform thickness on a side surface of the concave portion of the base.
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JP2003168828A (en) * 2001-12-04 2003-06-13 Citizen Electronics Co Ltd Surface mounting light emitting diode and its producing method

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JP2001196644A (en) * 2000-01-11 2001-07-19 Nichia Chem Ind Ltd Optical semiconductor device and manufacturing method thereof
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