JP2006032387A - Led lamp - Google Patents

Led lamp Download PDF

Info

Publication number
JP2006032387A
JP2006032387A JP2004204456A JP2004204456A JP2006032387A JP 2006032387 A JP2006032387 A JP 2006032387A JP 2004204456 A JP2004204456 A JP 2004204456A JP 2004204456 A JP2004204456 A JP 2004204456A JP 2006032387 A JP2006032387 A JP 2006032387A
Authority
JP
Japan
Prior art keywords
led lamp
phosphor
resin cover
led
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004204456A
Other languages
Japanese (ja)
Other versions
JP4932144B2 (en
Inventor
Akira Ichikawa
Masuji Tazaki
明 市川
益次 田崎
Original Assignee
Asahi Rubber:Kk
株式会社朝日ラバー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Rubber:Kk, 株式会社朝日ラバー filed Critical Asahi Rubber:Kk
Priority to JP2004204456A priority Critical patent/JP4932144B2/en
Publication of JP2006032387A publication Critical patent/JP2006032387A/en
Application granted granted Critical
Publication of JP4932144B2 publication Critical patent/JP4932144B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED lamp capable of eliminating leakage light from a resin cover containing a phosphor and eliminating a variation in color tones. <P>SOLUTION: The LED lamp is formed by converting a luminescent color by passing light from an LED chip through the resin cover containing a phosphor or a wavelength absorbent has a binder layer. The LED lamp comprises a silicone-based adhesive or an epoxy-based adhesive containing the phosphor or the wavelength absorbent and inorganic particles formed between the resin cover and the light emitting diode or an enclosure enclosing the light emitting diode. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to LED lamps used for various light sources such as a backlight light source, a display, and an illumination using an LED, and an optical sensor, and more particularly, to a configuration for obtaining an LED lamp having an emission color different from the emission color of the LED. Is.

  A light emitting diode (LED) is a semiconductor light emitting element that emits light, and converts electrical energy into ultraviolet light, visible light, infrared light, etc., and has a long life, high reliability, and a light source. When used, the replacement work can be reduced, so that portable communication devices, personal computer peripheral devices, OA devices, household electrical devices, audio devices, various switches, backlight light sources, various display devices such as bulletin boards, etc. Widely used as a component. In addition, LED lamps are attracting attention as a backlight illumination light source for in-vehicle device displays, and are used for backlight illumination in displays such as meters, heater control panels, and audio, especially in the white or blue-green region. There is a need for LED lamps that emit light.

  Such an LED lamp can be obtained by changing the color of light emitted from the LED by including various phosphor powders in a transparent resin that seals the semiconductor light emitting element. For example, light from a blue LED is applied to a phosphor in a transparent resin, and the emission wavelength of the blue LED is converted into a white or green wavelength by the action of the phosphor and emitted.

  As shown in FIG. 4, the structure of such an LED lamp includes leads 1 and 2, a semiconductor element 3 that emits blue light, and a lead wire 4 that electrically connects the semiconductor light emitting element 3 and the lead 2. It is known that a fluorescent layer 7 is provided on a semiconductor light-emitting element 3 of a so-called bullet-type light emitting diode and is sealed together with the semiconductor light-emitting element 3 or the like, which is sealed in a bullet shape with a sealing material 5. Further, as shown in FIG. 5, the semiconductor light emitting element 3 that emits blue light and the lead thin wires 4 and 4 are accommodated inside the box-shaped light emitter accommodating member 6 whose upper surface is open, and these are connected. In some cases, a fluorescent layer 7 is provided on a semiconductor light emitting element 3 of a so-called chip-type light emitting diode and the LED housing member 6 is sealed together with the semiconductor light emitting element 3 or the like. When the fluorescent layer 7 is provided on the semiconductor light emitting element 3, the phosphor may be used as it is or with a binder. In any case, as shown in FIGS. 4 and 5, the fluorescent layer is sealed together with the semiconductor light emitting element in the sealing material.

  However, in the fluorescent layer using such a sealing material, the thickness of the fluorescent layer varies, and it is difficult to uniformly manage the color tone of light from the entire LED lamp. Therefore, it has been proposed to use a fluorescent layer containing a phosphor in a resin cover having a constant thickness, instead of the fluorescent layer made of such a sealing material.

  As a structure of an LED lamp using such a resin cover, a structure as shown in FIG. 6 is known. In a cup portion provided on one lead 1, for example, an LED chip 3 having a blue emission color is installed, and wiring with the other lead 2 and a gold wire is performed. A resin cover 8 containing a phosphor such as YAG (yttrium-aluminum-garnet) is formed in the cup portion so as to cover the LED chip 3, and further a case made of a sealing resin covering the resin cover 8 9 is formed.

  A similar resin cover can also be installed in a chip-type LED lamp as shown in FIG. The LED chip 3 is installed in a cup portion formed on the heat sink, and wiring with the other lead 2 and a gold wire is performed. A resin cover 8 containing a phosphor is formed in the cup portion so as to cover the chip, and the resin cover 8 is further sealed with a sealing resin, and formed on the sealing resin with a resin. An optical lens 9 is arranged.

  Recently, as shown in FIG. 8, a flip chip type LED in which the coupling portion with the electrode of the LED is directed downward and the LED is directly connected to the electrode without wire bonding has been developed. At this time, the conventional substrate is made transparent so that light can be extracted over the entire surface. Such a flip-chip type LED does not require wire bonding, and thus can be miniaturized.

In any of the above LED lamps, ideally, all the light from the LED chip 3 passes through the resin cover 8. At this time, the wavelength of the light from the LED chip is converted into white light by the excitation of the phosphor in the resin cover. Therefore, the light emitted from the LED lamp to the outside is white light in which the light from the LED chip and the light from the phosphor are mixed.
JP 2003-318448 A JP 2000-12909 A

  However, in the LED lamp having the resin cover as described above, part of the light from the LED chip may leak without passing through the resin cover. In particular, in the case of a chip type, it is difficult for the resin cover to cover the entire LED structurally, and thus light leakage is likely to occur. This light leakage originally occurs in addition to the mixed color of the light from the LED chip and the wavelength-converted white light, which causes instability of the color management of the LED lamp and causes a decrease in production quality. The problem of end.

  In order to solve the above-described problems, the present invention provides an LED lamp in which light emitted from an LED chip is converted through a resin cover containing a phosphor or a wavelength absorbing material to change the emission color. By forming a binder layer in which a phosphor or a wavelength absorbing material is mixed with a sealing resin for sealing the chip or the LED chip, light leakage is prevented. Thereby, it is possible to solve the problem of quality degradation caused by instability of the color tone of the LED lamp caused by light leakage.

  In particular, since flip-chip type LEDs do not require wire bonding, the binder layer and phosphor-containing resin cap of the present invention suppress light scattering in a reflector plate in which phosphors are arranged near the LEDs. Can do. As a result, it is possible to provide a white LED lamp that is much thinner than before.

The specific configuration of the present invention is as follows.
(1) In an LED lamp formed by converting light emission color by passing light from an LED chip through a resin cover containing a phosphor or a wavelength absorber, sealing the resin cover and the light emitting diode or light emitting diode An LED lamp, wherein a binder layer containing a phosphor or a wavelength absorber is formed between bodies.
(2) The LED lamp according to (1), wherein the binder layer includes a binder selected from a silicone-based adhesive, an epoxy-based adhesive, and inorganic fine particles, and a phosphor or a wavelength absorber.
(3) The LED lamp according to (1) or (2), wherein the LED is a flip-chip type light emitting diode.
(4) The LED according to any one of (1) to (3), wherein the resin cover is formed in a cap shape by adding a phosphor or a wavelength absorber to a transparent resin. lamp.
(5) The LED lamp according to any one of the above (1) to (4), which has a lens portion formed of resin on the outside of the resin cover.

  Next, embodiments of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, the LED lamp 1 of the present invention is provided with lead frames 2 and 3, an LED chip 4, a resin cover 5 and a resin lens 6, and the resin cover 5 that covers the LED chip 4 is provided. The original emission color of the LED chip 4 is converted into white light.

  The resin cover of the present invention can be molded into an appropriate shape in advance by injection molding, potting molding or the like. As the resin base material, translucent polyester resin, acrylic resin, urethane, nylon, silicone resin, vinyl chloride, polystyrene, bakelite and other transparent rubber such as silicone rubber can be used.

Examples of the phosphor blended in the resin cover of the present invention include inorganic phosphors, pigments, organic fluorescent dyes, pseudo-pigments, and the like, and examples of the inorganic phosphor include Y 3 —X Ga X Al 5 O 12 : Ce ( 0 ≦ x ≦ 3), BaMgAl 16 O 27 : Eu, (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu, BaMgAl 16 O 27 : Eu, Mn, Zn 2 GeO 4 : Mn, Y 2 O 2 S: Eu, 3.5MgO.0.5MgF 2 .GeO 2 : Mn, La 2 O 2 S: Eu, CaS: Eu, LiEuW 2 O 8 and the like, phthalocyanine, azo, and isoindolinone as pigments Organic pigments such as quinacridone and lake pigments, inorganic pigments such as cobalt blue, ultramarine, and iron oxide, and organic fluorescent dyes such as perylene, naphthalimide, coumarin, cyanine, flavin, and rhodamine As the pigment, a fluorescent pigment obtained by coloring a plastic powder with a fluorescent dye can be preferably used.

  The particle size of the phosphor used in the present invention is preferably in the range of 10 μm to 50 μm, more preferably 20 μm to 30 μm. If the particles are too small, they tend to aggregate with each other and tend to hinder light transmission.

  Between the cover of the present invention and the LED chip or the sealing body that seals the LED chip, a binder layer containing a phosphor or a wavelength absorber is formed.

  Such a binder layer can be formed by blending a phosphor or a wavelength absorber with a ready-made adhesive such as a silicone-based adhesive or an epoxy-based adhesive. A binder layer can be formed very easily by blending a phosphor with such an existing adhesive.

  In addition, a binder layer may be formed by blending phosphor or wavelength absorber with silica fine particles, alumina fine particles, low melting point glass particles, alkaline earth metal pyrophosphate or orthophosphate particles as a binder. it can. In the case of forming a binder layer with a binder of such inorganic particles, in order to enhance the binding effect, it is made into a slurry and is a liquid material including a fluorescent material on the surface of the sealing body that seals the LED or LED. It can be formed by coating. After application, the fluorescent material is fixed to the binder layer by heating, and this heating is performed integrally with the resin cover mounted, or the resin cover is mounted after fixing the binder layer after heating. The heating temperature is appropriately selected between 150 and 350 ° C. depending on the type of binder.

  In addition to the phosphor and the binder, a diffusing agent and a filler can be blended in the binder layer. The diffusing agent is a particle having a particle size of 1 nm or more and less than 5 μm, and has an effect of irregularly reflecting light from the light emitting element to prevent color unevenness. The filler is a particle having a particle size of 5 μm or more and 100 μm or less. As these materials, titanium oxide, aluminum oxide, silicon oxide, barium titanate and the like can be used.

  The blending amount of the phosphor in the adhesive or binder is preferably 30 to 70% by weight, particularly preferably 40 to 60% by weight. The resin cover of the present invention preferably has a shape that covers the LED chip, such as a cap.

  The LED lamp of this invention can be equipped with the resin lens in order to attach a condensing function to the outer side of the sealing material which seals a resin cover or a resin cover as needed. Such a resin lens can be obtained, for example, by curing a silicone resin composition. As the silicone resin composition, a liquid addition reaction curable silicone resin composition is particularly preferable. The addition reaction type silicone resin composition is not particularly limited as long as it forms a transparent silicone resin by heat curing. And those containing heavy metal catalysts such as Examples of the silicone resin composition include KE1935 (A / B) manufactured by Shin-Etsu Chemical Co., Ltd., XE14-062 and XE14-907 manufactured by GE Toshiba Silicone Co., Ltd., SH6103 and DX-35 manufactured by Toray Dow Corning Silicone Co., Ltd. Commercial products such as -547 can be used.

  As such a resin lens, a thin device can be provided by using a fullnel lens. A fullnel lens is a thin lens having fine irregularities having the same function as a normal convex lens.

  According to the optical device of the present invention, the light from the LED chip passes through the resin cover and the LED chip or a sealing body for sealing the LED chip by forming a binder layer containing a phosphor. Is completely sealed, so that light leakage can be prevented. Therefore, the color tone management of the LED lamp can be stabilized, and the production quality can be prevented from being lowered.

  In particular, since flip-chip type LEDs do not require wire bonding, the binder layer and phosphor-containing resin cap of the present invention suppress light scattering in a reflector plate in which phosphors are arranged near the LEDs. Can do. As a result, the light utilization efficiency can be increased by 30% or more, and the thickness of the lens can be reduced. For example, it is possible to provide a white LED lamp that is 1/4 to 1/5 thinner than conventional ones. it can.

  The effect of this invention is demonstrated based on a specific Example. The present invention is not limited by these examples.

[Example 1]
As shown in FIG. 1, a flip chip type LED lamp was prepared in which the electrode surface of the LED chip 3 was directly mounted on the flat leads 1 and 2 with gold bumps 10.

  Add 0.5% vulcanizing agent and 40% YAG phosphor as phosphor to silicone resin (Shin-Etsu Chemical KE961T-U), disperse, and match the shape of LED chip using a mold, 1mm square thickness 0.2mm The resin cover 7 was obtained by molding at 170 ° C. for 10 minutes according to the cap shape.

  Next, a binder was prepared by dispersing 10% of YAG phosphor in a room temperature curing type silicone adhesive and applied to the LED chip. When the phosphor-containing resin cover prepared above was covered from the top of the LED chip, excess adhesive protruded from the bottom of the LED chip, and the gap between the resin cover and the substrate of the LED chip was sealed. By curing the adhesive, an extremely thin white LED lamp could be obtained.

  When this LED lamp was energized and the color tone was observed, the blue light leaking from the gap between the lower part of the cap and the substrate was wavelength-converted by the YAG phosphor in the adhesive, and a uniform and non-uniform color tone was obtained. It was confirmed.

[Example 2]
As shown in FIG. 2, a chip-type LED lamp was prepared in which an LED chip 3 was installed on a flat lead 1 and wiring with the other lead 2 and gold wire 4 was performed.

  Further, 0.5% vulcanizing agent and 40% YAG phosphor as a phosphor were added and dispersed in silicone resin (Shin-Etsu Chemical KE961T-U) to form a dish-shaped resin cover 7 having a thickness of 0.2 mm. .

  Next, a slurry composed of 80 wt% of nitrocellulose and 20 wt% of alumina contains 40% of “Lumogen Yellow F” (manufactured by BASF), which is a perylene-based condensing fluorescent dye, as a phosphor. After coating, the resin cover 7 was placed and cured by heating at 210 ° C. for 30 minutes. As a result, the entire LED could be covered with the binder containing the phosphor and the resin cover 7.

  Next, the upper side of the cover was sealed with a translucent epoxy resin sealing material 5, and a lens formed of a silicone-based resin was further mounted thereon with an adhesive.

  When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

[Example 3]
A chip-type LED similar to that of Example 2 was prepared.

  Next, a slurry composed of 80 wt% nitrocellulose and 20 wt% alumina contains 40% of “Lumogen Yellow F” (BASF), which is a perylene-based condensing fluorescent dye, as a phosphor, and is applied to an LED to form a binder layer. Formed.

  Next, instead of the phosphor-containing resin cover, 15% of YAG phosphor is blended with silicone resin (SR7010 manufactured by Dow Corning Silicone Co., Ltd.) until the chip surface becomes flat on the binder layer (FIG. 2). (Up to 7 and 5).

  When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

[Example 4]
Similarly to Example 1, a phosphor-containing resin cover 7 made of a flip-chip type LED lamp and a silicone resin was prepared.

Next, a YAG phosphor, silanol (Si (OEt) 3 OH) and ethanol were mixed at a ratio of 1: 1: 1 to prepare a slurry. This slurry was distributed from the nozzle to the surface of the LED chip, and then heated at 300 ° C. for 3 hours to form a binder layer 8 made of silica in which the phosphor was dispersed. A phosphor-containing cap 7 was adhered to the binder layer with an adhesive.

  When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

[Example 5]
In the same manner as in Example 2, a resin cover 7 made of an LED lamp and silicone rubber was prepared.

  Next, a YAG phosphor, sol-form methyl silicate, and silica of ethylene glycol were mixed at a ratio of 1: 1 to prepare a slurry. This slurry was distributed from the nozzle to the surface of the LED chip, and then heated at 260 ° C. for 3 hours to form a binder layer 8 made of silica in which the phosphor was dispersed. The resin cover 7 was adhered to the binder layer with an adhesive.

  When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

[Example 6]
As shown in FIG. 3, a chip-type LED lamp was prepared in which an LED chip was installed in a cup portion formed on a heat sink, and wiring with the other lead and a gold wire was performed. The LED chip was sealed with a translucent epoxy resin sealing material 5.

  Silicone material (KE-961T-U manufactured by Shin-Etsu Chemical Co., Ltd.) 0.5% vulcanizing agent and YAG phosphor as phosphor (yttrium 28.0 wt%, aluminum 13.6 wt%, gadolinium 56.62 wt%, cerium 1 .23 wt%) was added in an amount of 40%, an appropriate amount was added to the mold, and a resin cover having a thickness of 0.3 mm made of silicone rubber was molded by holding and pressing at 170 ° C. for 10 minutes.

  Next, 50% of the YAG phosphor was added as a phosphor to the silicone-based adhesive to produce a phosphor-containing adhesive, which was applied to the LED chip. When the phosphor-containing resin cover prepared above was covered from the top of the LED chip, excess adhesive protruded from the bottom of the LED chip, and the gap between the resin cover and the substrate of the LED chip was sealed. By curing the adhesive, an extremely thin white LED lamp could be obtained.

  The entire inside of the light emitter housing member including the resin cover 7 was sealed with a translucent epoxy resin sealing material 5 to obtain a light emitting diode in which the top of the sealing material had a lens shape.

  When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

The schematic of the chip type LED lamp of this invention is shown. The schematic of the flap chip type LED lamp of this invention is shown. The schematic of the cannonball type LED lamp of this invention is shown. The schematic of the conventional bullet-type LED lamp is shown. The schematic of the conventional chip type LED lamp is shown. The schematic of the LED lamp using the conventional resin cover is shown. The schematic of the LED lamp using the conventional resin cover and resin lens is shown. The schematic of the conventional flip chip type LED lamp is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Lead 2 Lead 3 LED chip 4 Lead thin wire 5 Sealing material 6 LED accommodating member 7 Phosphor-containing resin cover 8 Binder layer 9 Resin lens 10 Gold bump

Claims (6)

  1. In an LED lamp in which light emitted from an LED chip is converted by changing the emission color by passing a phosphor or a resin cover containing a wavelength absorber, between the resin cover and the sealing body for sealing the light emitting diode or the light emitting diode An LED lamp, wherein a binder layer containing a phosphor or a wavelength absorber is formed on the LED lamp.
  2. 2. The LED lamp according to claim 1, wherein the binder layer includes a binder selected from a silicone-based adhesive, an epoxy-based adhesive, and inorganic fine particles, and a phosphor or a wavelength absorber.
  3. The LED lamp according to claim 1, wherein the LED is a flip-chip type light emitting diode.
  4. 4. The LED lamp according to claim 1, wherein the resin cover is formed into a cap shape by adding a phosphor or a wavelength absorber to a transparent resin.
  5. The LED lamp according to claim 1, further comprising a lens portion formed of a resin on an outer side of the resin cover.
  6. The LED lamp according to claim 5, wherein the lens unit is a Fresnel lens.
JP2004204456A 2004-07-12 2004-07-12 LED lamp Active JP4932144B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004204456A JP4932144B2 (en) 2004-07-12 2004-07-12 LED lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004204456A JP4932144B2 (en) 2004-07-12 2004-07-12 LED lamp

Publications (2)

Publication Number Publication Date
JP2006032387A true JP2006032387A (en) 2006-02-02
JP4932144B2 JP4932144B2 (en) 2012-05-16

Family

ID=35898412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004204456A Active JP4932144B2 (en) 2004-07-12 2004-07-12 LED lamp

Country Status (1)

Country Link
JP (1) JP4932144B2 (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021473A (en) * 2007-07-13 2009-01-29 Rohm Co Ltd Semiconductor light-emitting device
JP2009147343A (en) * 2007-12-14 2009-07-02 Cree Inc Distribution of phosphor using centrifugal force in led lamp
JP2010510659A (en) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニアThe Regents of The University of California Light emitting diode with textured phosphor conversion layer
JP2010206039A (en) * 2009-03-05 2010-09-16 Nichia Corp Light emitting device
JP2011082455A (en) * 2009-10-09 2011-04-21 Citizen Electronics Co Ltd Method for manufacturing light emitting device
JP2011108865A (en) * 2009-11-18 2011-06-02 Kyocera Corp Optical module and droplet curing device
JP2012069977A (en) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd Light emitting device and method for manufacturing the same
JP2013138216A (en) * 2013-01-30 2013-07-11 Nitto Denko Corp Light-emitting device
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
KR101905192B1 (en) 2011-11-07 2018-10-05 신에쓰 가가꾸 고교 가부시끼가이샤 Phosphor-high filled wavelength conversion sheet, method for manufacturing light emitting semiconductor device using the same, and said light emitting semiconductor device
US10454010B1 (en) 2006-12-11 2019-10-22 The Regents Of The University Of California Transparent light emitting diodes
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252372A (en) * 2001-02-26 2002-09-06 Nichia Chem Ind Ltd Light-emitting diode
JP2004179644A (en) * 2002-11-12 2004-06-24 Nichia Chem Ind Ltd Phosphor lamination and light source using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252372A (en) * 2001-02-26 2002-09-06 Nichia Chem Ind Ltd Light-emitting diode
JP2004179644A (en) * 2002-11-12 2004-06-24 Nichia Chem Ind Ltd Phosphor lamination and light source using the same

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US10546978B2 (en) 2003-09-18 2020-01-28 Cree, Inc. Molded chip fabrication method and apparatus
US10164158B2 (en) 2003-09-18 2018-12-25 Cree, Inc. Molded chip fabrication method and apparatus
US9105817B2 (en) 2003-09-18 2015-08-11 Cree, Inc. Molded chip fabrication method and apparatus
US9859464B2 (en) 2004-07-06 2018-01-02 The Regents Of The University Of California Lighting emitting diode with light extracted from front and back sides of a lead frame
US9240529B2 (en) 2004-07-06 2016-01-19 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
JP2010510659A (en) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニアThe Regents of The University of California Light emitting diode with textured phosphor conversion layer
US8860051B2 (en) 2006-11-15 2014-10-14 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US10454010B1 (en) 2006-12-11 2019-10-22 The Regents Of The University Of California Transparent light emitting diodes
US10644213B1 (en) 2006-12-11 2020-05-05 The Regents Of The University Of California Filament LED light bulb
US10593854B1 (en) 2006-12-11 2020-03-17 The Regents Of The University Of California Transparent light emitting device with light emitting diodes
US10658557B1 (en) 2006-12-11 2020-05-19 The Regents Of The University Of California Transparent light emitting device with light emitting diodes
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP2009021473A (en) * 2007-07-13 2009-01-29 Rohm Co Ltd Semiconductor light-emitting device
JP2009147343A (en) * 2007-12-14 2009-07-02 Cree Inc Distribution of phosphor using centrifugal force in led lamp
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP2010206039A (en) * 2009-03-05 2010-09-16 Nichia Corp Light emitting device
JP2011082455A (en) * 2009-10-09 2011-04-21 Citizen Electronics Co Ltd Method for manufacturing light emitting device
JP2011108865A (en) * 2009-11-18 2011-06-02 Kyocera Corp Optical module and droplet curing device
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
KR101905192B1 (en) 2011-11-07 2018-10-05 신에쓰 가가꾸 고교 가부시끼가이샤 Phosphor-high filled wavelength conversion sheet, method for manufacturing light emitting semiconductor device using the same, and said light emitting semiconductor device
JP2012069977A (en) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd Light emitting device and method for manufacturing the same
JP2013138216A (en) * 2013-01-30 2013-07-11 Nitto Denko Corp Light-emitting device

Also Published As

Publication number Publication date
JP4932144B2 (en) 2012-05-16

Similar Documents

Publication Publication Date Title
US8258699B2 (en) Illuminating device
US8362695B2 (en) Light emitting diode component
JP5566785B2 (en) Composite sheet
US8030840B2 (en) Light emitting device, lighting system, backlight unit for display device and display device
JP5701523B2 (en) Semiconductor light emitting device
US10309587B2 (en) Light emitting diode component
US9196800B2 (en) Light-radiating semiconductor component with a luminescence conversion element
KR100872295B1 (en) White light emitting device and white light source module using the same
KR101156096B1 (en) Back ligtht unit for quantum dot sheet and manufacturing method thereof
US7260123B2 (en) Semiconductor light-emitting apparatus having wavelength conversion portion and method of fabricating the same
AU2005239406B2 (en) Light emitting diode component
JP2015159325A (en) Semiconductor light-emitting device, backlight and display device consisting of semiconductor light-emitting device
US20140361317A1 (en) Solid state lighting component package with reflective layer
US8723198B2 (en) Wavelength-converting converter material, light-emitting optical component, and method for the production thereof
CN100433382C (en) Single covering element for semiconductor device outer case and apparatus containing the same
TWI404791B (en) A semiconductor light emitting device, a lighting device, and an image display device
EP0862794B1 (en) Sealing material with wavelength converting effect and its production process, process of fabricating a light emitting semiconductor device and light emitting semiconductor device
JP5083503B2 (en) Light emitting device and lighting device
US8169135B2 (en) Semiconductor lighting device with wavelength conversion on back-transferred light path
TWI226357B (en) Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body
US6614170B2 (en) Light emitting diode with light conversion using scattering optical media
CN101432895B (en) Side-view surface mount white LED
EP2064752B1 (en) Light emitting package and method of making same
CN1702141B (en) Mold compound with fluorescent material and a light-emitting device made therefrom
KR100887786B1 (en) Fluorescent substance containing glass sheet, method for manufacturing the glass sheet and light-emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070709

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100409

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100420

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101108

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110628

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110928

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20111115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120131

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120215

R150 Certificate of patent or registration of utility model

Ref document number: 4932144

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150224

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250