JP2000039727A5 - - Google Patents
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- Publication number
- JP2000039727A5 JP2000039727A5 JP1999197523A JP19752399A JP2000039727A5 JP 2000039727 A5 JP2000039727 A5 JP 2000039727A5 JP 1999197523 A JP1999197523 A JP 1999197523A JP 19752399 A JP19752399 A JP 19752399A JP 2000039727 A5 JP2000039727 A5 JP 2000039727A5
- Authority
- JP
- Japan
- Prior art keywords
- weight
- stripper composition
- compound
- photoresist according
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229920002120 photoresistant polymer Polymers 0.000 description 10
- -1 sulfoxide compound Chemical class 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980027782A KR100288769B1 (ko) | 1998-07-10 | 1998-07-10 | 포토레지스트용스트리퍼조성물 |
| KR1998P27782 | 1998-07-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000039727A JP2000039727A (ja) | 2000-02-08 |
| JP2000039727A5 true JP2000039727A5 (https=) | 2006-08-24 |
| JP4358935B2 JP4358935B2 (ja) | 2009-11-04 |
Family
ID=19543684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19752399A Expired - Fee Related JP4358935B2 (ja) | 1998-07-10 | 1999-07-12 | フォトレジスト用ストリッパー組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6211127B1 (https=) |
| JP (1) | JP4358935B2 (https=) |
| KR (1) | KR100288769B1 (https=) |
| TW (1) | TW439013B (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4224651B2 (ja) * | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
| JP2000284506A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
| US6506684B1 (en) * | 2000-05-24 | 2003-01-14 | Lsi Logic Corporation | Anti-corrosion system |
| KR100363271B1 (ko) * | 2000-06-12 | 2002-12-05 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
| KR20010113396A (ko) * | 2000-06-19 | 2001-12-28 | 주식회사 동진쎄미켐 | 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물 |
| KR100779037B1 (ko) * | 2001-09-26 | 2007-11-27 | 주식회사 동진쎄미켐 | 티에프티 엘시디용 칼라 레지스트 박리액 조성물 |
| KR100745891B1 (ko) * | 2001-12-14 | 2007-08-02 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| KR100733197B1 (ko) * | 2001-12-18 | 2007-06-27 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| KR100745892B1 (ko) * | 2001-12-14 | 2007-08-02 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| CN100334508C (zh) * | 2003-01-10 | 2007-08-29 | 吉埈仍 | 光刻胶脱膜组成物及使用该组成物的模型形成方法 |
| KR100663624B1 (ko) * | 2004-04-29 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조방법 |
| KR101403515B1 (ko) * | 2006-06-22 | 2014-06-09 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 조성물 |
| EP2247672B1 (en) * | 2008-02-29 | 2013-06-05 | Avantor Performance Materials, Inc. | Microelectronic substrate cleaning compositions |
| US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| MY185453A (en) | 2009-07-30 | 2021-05-19 | Basf Se | Post ion implant stripper for advanced semiconductor application |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| WO2022015677A2 (en) * | 2020-07-13 | 2022-01-20 | Advansix Resins & Chemicals Llc | Branched amino acid surfactants for electronics products |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
| US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
| US5480585A (en) * | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
| JP3761592B2 (ja) * | 1994-04-05 | 2006-03-29 | キャロル・タッチ・インターナショナル・リミテッド | 樹脂部材の結合構造 |
| US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
| US5567574A (en) * | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
| US5554312A (en) * | 1995-01-13 | 1996-09-10 | Ashland | Photoresist stripping composition |
| US5731243A (en) * | 1995-09-05 | 1998-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cleaning residue on a semiconductor wafer bonding pad |
| JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
-
1998
- 1998-07-10 KR KR1019980027782A patent/KR100288769B1/ko not_active Expired - Fee Related
-
1999
- 1999-03-26 TW TW088104832A patent/TW439013B/zh not_active IP Right Cessation
- 1999-06-11 US US09/330,206 patent/US6211127B1/en not_active Expired - Lifetime
- 1999-07-12 JP JP19752399A patent/JP4358935B2/ja not_active Expired - Fee Related
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