JP2000009663A - Crystal orientation-measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To quickly and accurately obtain a crystal surface orientation by unnecessitating the measurement of the reference position of a rotary angle. SOLUTION: A device is provided with a data-processing part for calculating the orientation of a specific crystal surface in a peripheral direction for a mark 17 of a specimen 1 by δ-reading values δ0+ and δ180+ for giving the peak output of an X-ray detector 5 when the specimen 1 that is a nearly circular plate- shaped crystal is rotated by δ turn each at a normal position and a position where the front and revere sides are reversed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal orientation measuring apparatus for measuring the crystal orientation of a single crystal sample such as silicon or quartz using X-ray diffraction.

[0002]

2. Description of the Related Art In order to use a single crystal such as silicon or quartz as an industrial product such as a semiconductor or an oscillator, it is necessary to cut the surface so as to have a specific angle with respect to a crystal lattice plane. For this purpose, it is necessary to know the crystal lattice plane of the sample, but a generally used method for measuring the lattice plane of a crystal utilizes X-ray diffraction. When an X-ray of a single wavelength is incident on a sample, if the incident angle between the lattice plane and the X-ray becomes θ ₀ , the X-ray is diffracted by atoms. The angle θ ₀ at this time is called a diffraction angle (Bragg angle), and the angle can be calculated from the lattice spacing and the X-ray wavelength. Therefore, the crystal is obtained by measuring the diffracted X-ray while changing the X-ray incident angle direction. Can be measured.

Here, in the process of processing a columnar single crystal ingot into a disk (wafer) having a thickness of about 0.3 mm, the crystal orientation measurement is usually performed twice. First, a single crystal ingot is ground into a columnar shape, the crystal orientation is measured on the side surface (cylindrical surface), and an orientation flat surface (OF surface) or a V-groove along the axis is machined on the side surface to mark the orientation. Next, the end is cut at a right angle to the cylinder axis, the crystal orientation is measured for this test section, and the inclination angle between the determined crystal plane and the test section is determined, so that the inclination angle is parallel to the crystal plane or at a predetermined angle. Into a wafer with a slicing machine. The circumferential orientation of the wafer can be determined from the surrounding OF plane.

[0004] In order to test whether the OF surface of the wafer thus manufactured is correctly processed, X is applied to the side surface again.
A line beam is applied to measure the crystal orientation in the circumferential direction. As an apparatus for measuring the crystal orientation of this wafer, for example, there is one as shown in FIG. 14 (Japanese Patent Application Laid-Open No. 6-167463). In this apparatus, the X-ray beam 203 is applied to one point on the side surface of the wafer 201 along the wafer surface, and the diffracted X-ray 204 is detected while rotating the X-ray beam along the wafer surface. The deviation of the crystal orientation in the circumferential direction of the wafer 201 is measured from the deviation of the corner reference position. In this apparatus, the wafer 2 having the V-groove 209
01 is sandwiched and held between two guide pins 206a and 206b and an engaging pin 207 that moves on a vertical bisector thereof by a spring, and positioning is performed so that the engaging pin 207 and the V-groove 209 are engaged. I have.

[0005]

The conventional wafer crystal orientation measuring apparatus has a problem that the reference position of the rotation angle must be measured in advance by mechanical measurement or by using a crystal having a known orientation. Further, when the inclination angle of the crystal plane from the wafer surface is large, there is a problem that the measurement error increases, and there is a problem that it cannot be applied particularly to an off-cut wafer in which the crystal plane is intentionally inclined and cut. In addition, the conventional apparatus is only for the side surface, and cannot measure the wafer surface. Next, the positioning mechanism of the wafer with the V-groove of the conventional apparatus is for manual operation, and there is a problem that when the wafer is automatically replaced, another mechanism for aligning the V-groove with the engaging pin is required. In addition, when positioning a single crystal ingot with a V-groove before wafer processing by this mechanism, a heavy single crystal ingot is pushed and moved by an engagement pin through the V-groove, so that damage of the V-groove and durability of the engagement pin are caused. There's a problem.

[0006] The present invention has been made in view of the above,
First, it is not necessary to measure the reference position of the rotation angle,
Second, the calibration amount can be easily measured, and the normal measurement can be accurately obtained in a short time by measuring only one surface of the normal position without being affected by the tilt angle. Can be used to measure the crystal plane orientation of both the side and board surfaces of the wafer. Fourth, it can have an accurate positioning function that can handle manual and automatic replacement of grooved wafers. It is an object of the present invention to provide a crystal orientation measuring device capable of accurately positioning a crystal orientation even if its diameter changes.

[0007]

In order to solve the above-mentioned problems, an object of the present invention is to position a subject which is a substantially disc-shaped crystal and has a mark indicating an azimuth around the crystal based on the mark. Positioning means, an X-ray source that emits an X-ray beam along the board surface of the subject toward point C, which is one point on the side surface of the subject, and diffracted substantially along the board surface from the C point. An X-ray detector for detecting a diffracted X-ray, and a relative rotation of the X-ray source and the X-ray detector integrally with respect to the subject about a δ axis orthogonal to the board surface and substantially passing through the point C. A crystal orientation measuring device comprising a rotation mechanism, and measuring the orientation of the predetermined crystal plane in the circumferential direction with respect to the mark of the subject, performing the δ rotation on the subject at a normal position and a front / back inversion position, respectively. The peak of the X-ray detector when Read δ empower value δ ₀ ⁺ and δ
And summarized in that a data processing unit for calculating the orientation of the predetermined crystal plane in the circumferential direction with respect to the mark of the subject than ₁₈₀ ^+. With this configuration, δ ₀ ⁺ and δ ₁₈₀ ⁺
Is calculated, the crystal orientation with respect to this reference position, that is, the front / back inversion axis, can be accurately obtained without knowing the δ reading value of the δ rotation reference position.

According to a second aspect of the present invention, there is provided a positioning means for positioning a subject which is a substantially disc-shaped crystal and has a mark indicating an azimuth around the subject based on the mark, and a positioning means for positioning the subject along the board surface of the subject. X toward point C, one point on the side of the subject
An X-ray source that emits a X-ray beam, an X-ray detector that detects a diffracted X-ray diffracted substantially along the board surface from the point C,
With respect to the δ axis which is perpendicular to the board surface and substantially passes through the point C, the X
A δ rotation mechanism that integrally rotates the X-ray detector and the X-ray detector relative to the subject, and measures the orientation of the predetermined crystal plane in the circumferential direction with respect to the mark of the subject. in the apparatus, the X-ray detector wherein the [delta] rotation than the peak giving an output [delta] reading [delta] ₀ ⁺ and [delta] ₁₈₀ ⁺ a when performing rotation the [delta], respectively a normal position and reversed position for the first of the subject Is calculated and stored, and the δ is calculated at the normal position for the second object.
The azimuth of the predetermined crystal plane in the circumferential direction with respect to the mark of the second object is calculated from the δ reading value δ ₀ ⁺ giving the peak output of the X-ray detector when the rotation is performed and the calibration amount. The point is to have a data processing unit. With this configuration, the calibration amount of δ rotation is calculated by averaging δ ₀ ⁺ and δ ₁₈₀ ⁺ of the first subject. This calibration amount gives a peak output when the crystal plane orientation is aligned with the front / back inversion axis.
Value, that is, the reference position of δ rotation. By subtracting the calibration amount from the δ reading value δ ₀ ^{+ of} the second object, the crystal plane orientation of the second object with respect to the reference position is obtained.

According to a third aspect of the present invention, in the crystal orientation measuring apparatus according to the second aspect, the data processing unit is configured to input the first object or the second object inputted from outside as a known amount. The gist is that the tilt angle is corrected based on the tilt angle δ ₉₀ of the normal of the predetermined crystal plane from the board surface to calculate the calibration amount or the orientation of the predetermined crystal plane in the circumferential direction, respectively. I do. With this configuration, when calculating the amount of calibration, correction of the first subject inclination angle [delta] ₉₀ is performed. When the crystal plane orientation is obtained, the tilt angle δ ₉₀ of the second object is corrected. As a result, it is possible to accurately determine the crystal plane orientation even for an object having a large tilt angle.

According to a fourth aspect of the present invention, there is provided a positioning means for positioning a subject which is a substantially disc-shaped crystal and having a mark indicating an azimuth around the subject based on the mark, and a positioning means along the board surface of the subject. X toward point C, one point on the side of the subject
An X-ray source that emits a X-ray beam, an X-ray detector that detects a diffracted X-ray diffracted substantially along the board surface from the point C,
With respect to the δ axis which is perpendicular to the board surface and substantially passes through the point C,
A δ rotation mechanism that integrally rotates the X-ray detector and the X-ray detector relative to the subject, and measures the orientation of the predetermined crystal plane in the circumferential direction with respect to the mark of the subject. In the apparatus, the subject is rotated by 90 ° about a χ axis that is parallel to the board surface and substantially orthogonal to a direction connecting the center of the subject and the point C so that the X-ray beam hits a C ′ point on the board surface. A rotating mechanism, and a φ rotating mechanism for rotating the subject by φ about a φ axis perpendicular to the board surface, and measuring an orientation of the predetermined crystal plane in a direction substantially perpendicular to the board surface. Make a summary. With this configuration, it is possible to measure the orientation of a predetermined crystal plane in a direction substantially perpendicular to the side surface and the board surface of the wafer with one apparatus.

According to a fifth aspect of the present invention, there is provided an X-ray source for irradiating an X-ray beam to an object which is a substantially columnar crystal having a side surface, an upper surface, and a lower surface and having a groove indicating an azimuth on the side surface, An X-ray detector for detecting a diffracted X-ray diffracted on a predetermined crystal plane in the above, wherein the crystal orientation measurement apparatus for measuring the orientation of the predetermined crystal plane with respect to the grooves and the upper and lower surfaces, And a pair of positioning members abutting on the side surface, and an engaging member disposed in the middle of the pair of positioning members and engaging with the groove. With this configuration, the cylindrical axis rotation direction of the columnar crystal whose side surface is supported by the pair of positioning members is positioned by engaging the engaging member with the groove.

According to a sixth aspect of the present invention, an X-ray is directed toward point C, which is one point on the side surface of the subject, along the board surface of the subject having a substantially disk-shaped crystal and having a groove indicating an orientation around the crystal. An X-ray source that emits a beam, an X-ray detector that detects diffracted X-rays diffracted substantially along the board from the point C, and an X-ray that is orthogonal to the board and passes through the point C substantially. A δ rotation mechanism for integrally rotating the radiation source and the X-ray detector relative to the subject, and a crystal orientation measurement for measuring an orientation of the predetermined crystal plane in a circumferential direction with respect to the groove of the subject. In the apparatus, a first two positioning members abutting on a side surface of the subject, an engaging member disposed between the two positioning members and engaging with the groove, and the first two positioning members And a second positioning member that sandwiches the subject in opposition to The point is to do. With this configuration, the rotation direction of the disk axis of the disk-shaped crystal whose side surface is supported by the first two positioning members and the second positioning member is positioned by engaging the engaging member with the groove.

According to a seventh aspect of the present invention, X-rays are directed toward point C, which is one point on the side surface of the subject, along the board surface of the subject, which is a substantially disk-shaped crystal and has a groove indicating an azimuth around the crystal. An X-ray source that emits a beam, an X-ray detector that detects diffracted X-rays diffracted substantially along the board from the point C, and an X-ray that is orthogonal to the board and passes through the point C substantially. A δ rotation mechanism for integrally rotating the radiation source and the X-ray detector relative to the subject, and a crystal orientation measurement for measuring an orientation of the predetermined crystal plane in a circumferential direction with respect to the groove of the subject. In the apparatus, three or more positioning members abutting on the side surface of the subject, a mechanism for positioning and fixing the subject by moving the positioning members symmetrically with respect to one axis substantially perpendicular to the board surface, An engaging portion that engages with the groove in the positioning state Material. With this configuration, the rotation direction of the disk axis of the disk-shaped crystal whose side surface is supported by three or more positioning members is positioned by engaging the engaging member with the groove.

[0014] The invention of claim 8 provides the above-mentioned claims 5 and 6.
Alternatively, in the crystal orientation measuring apparatus according to 7, the invention has a rotating means for rotating the subject with respect to its cylindrical axis or disk axis when positioning the subject. With this configuration, the columnar crystal or the disk-shaped crystal whose side surface is supported by the positioning member is rotated with respect to the cylindrical axis or the disk axis, and the rotation direction is determined by engaging the engaging member with the groove. .

[0015]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 to FIG. 4 are views showing a first embodiment of the present invention. First, the configuration of the crystal orientation measuring apparatus will be described with reference to FIG. The wafer 1 which is a disc-shaped crystal is
2 placed on the table 8 and biased by a spring so that the OF surface (mark) 17 comes into contact with a positioning plate 9 as positioning means fixed to one end of the table 8.
It is held down by two holding pins 10a and 10b. δ
An X-ray tube 2 as an X-ray source and an X-ray detector 5 are fixed on the frame 6, and an X-ray beam 4 a passes through the source collimator 3 from the X-ray tube 2 so that an X-ray beam 4 a At point C. The X-ray detector 5 is arranged to measure the X-ray beam 4b diffracted at an angle of 2α from the point C. alpha is the Bragg angle of the measured crystal face as theta _0, obtained by _{α = (90 ° -θ 0)} . The δ frame 6 is rotated δ by the δ drive unit 7 with respect to the δ axis perpendicular to the board surface of the wafer 1 through the point C. X
Ray tube 2 is intended to target the copper tube voltage 40 kV, using the characteristic X-ray K _alpha of copper about 8 keV. The X-ray detector 5 is a proportional counter using gas, and counts X-ray photons. The δ drive unit 7 is connected to the data processing unit 14 via the mechanism control unit 11. The mechanism control unit 11 receives a drive timing and drive amount command from the data processing unit 14, controls the mechanism unit according to the command, and sends status information of the mechanism unit to the data processing unit 14. The X-ray tube 2 is connected to the data processing unit 1 via the X-ray control unit 12.
4 is connected. The X-ray control unit 12 supplies electric power to the X-ray tube 2, controls the tube voltage and the tube current, and turns on and off the X-ray tube 2 according to a command from the data processing unit 14.
The X-ray detector 5 is connected to a data processing unit 14 via a data collection unit 13. The data collection unit 13 counts output pulses of the X-ray detector 5 based on the measurement start signal from the data processing unit 14 and sends the counted pulses to the data processing unit 14 as digital data. The data processing unit 14 is a normal personal computer, and has a keyboard 15 as a man-machine interface.
And the display 16 are connected. Where the menu,
Display of status, results, and the like, and input by an operator such as menu selection, measurement start, and measurement suspension are performed. The data processing unit 14 controls each unit according to the stored sequence, performs measurement, and calculates a result according to the stored calculation processing program.

Next, the operation of the present embodiment will be described. The operator selects the measurement mode using the display 16 and the keyboard 15 and measures the orientation of the crystal plane to be measured in the circumferential direction with respect to the OF plane 17, but different measurement methods are possible by selecting the mode. There are five measurement modes: two-azimuth mode, calibration mode, one-azimuth mode, calibration mode with tilt angle correction, and one-azimuth mode with tilt angle correction. The operation will be described below for each measurement method.

First measurement method: The first measurement method uses a bidirectional mode. In this measurement method, measurement is performed at two positions, that is, a normal position and a front / back inversion position of the wafer. First, the operator
The wafer 1 is set on the table 8 such that the OF surface 17 is in contact with the positioning plate 9. When the measurement is started, the measurement is performed as follows by a command from the data processing unit 14. When the X-ray tube 2 is turned on, scanning starts from the start point of δ rotation. When the normal of the crystal plane to be measured, which is substantially perpendicular to the OF plane 17, is at an angle of α with the X-ray beam 4a,
Diffraction occurs and a peak occurs in the output of the X-ray detector 5. At this time, the δ reading value and δ ₀ ⁺ are stored, “next back side” is displayed, and the apparatus is put into a measurement waiting state. The operator reverses and sets the wafer 1 and restarts. Similar to the above measurement is performed, [delta] readings, [delta] ₁₈₀ ⁺ is obtained. The data processing unit 14 calculates a circumferential deviation δ ₀ of the crystal plane normal from the OF plane normal from δ ₀ ⁺ and δ ₁₈₀ ⁺ . In this calculation, the offset of the δ reading value with respect to the positioning plate 9 is canceled, so that special calibration of δ rotation is not required. In addition, even when the crystal plane is tilted to the normal to the crystal plane, that is, when there is a deviation δ ₉₀ from the board surface, the deviation δ ₀ in the circumferential direction can be accurately obtained.

<Calculation for obtaining δ ₀ from δ ₀ ⁺ and δ ₁₈₀ ⁺ >; FIG. 2 shows calculation coordinates. xyz is coordinates fixed to the wafer 1, the plane xz is parallel to the board surface, and the z-axis coincides with the OF plane normal. FIG. 3 shows a diagram for explaining the calculation. This is a diagram on a spherical surface showing directions. S ₀ and S ₁₈₀
Is the incident direction of the X-ray beam 4a at the peak output at the normal position and the inversion position, respectively. St is the measurement starting point of δ, and when δ = 0, the intermediate δ reference direction of the X-ray beams 4a and 4b coincides with St. St, the distance between the z axes is the calibration amount δ ^* with δ. h is on the straight line zx because the inclination angle is 0 in the normal direction of the crystal plane. The distance between h and St is each measurement reading. From FIG. 3, the following equation for calculating δ ₀ is obtained.

Δ ₀ = (δ ₀ ⁺ −δ ₁₈₀ ⁺ ) / 2 (1) FIG. 4 shows a case where the tilt angle in FIG. 3 is not zero. h and S ₀ ,
The distance between S ₁₈₀ is α. δ ₀ ⁺ and δ ₁₈₀ ⁺ are each smaller by ε ₀ than in the case of δ ₉₀ = 0. It can be seen from equation (1) that ε ₀ is canceled out and δ ₀ is correctly obtained even if δ ₉₀ is not ₀ . <> End.

Second measurement method: The second measurement method uses a calibration mode and a unidirectional mode. In this measurement method, measurement is performed only at the time of calibration at two positions, that is, the normal position of the wafer and the inverted position of the front and back, and is usually measured only at the normal position. The calibration is a calibration of the δ rotation, and is a calibration of a mechanical shift, and therefore does not need to be performed frequently. First, calibration is performed in the calibration mode. At this time, as described in the first measurement method, δ ₀ ⁺ and δ
Calculated ₁₈₀ ^+, calculates and stores the calibration amount [delta] ^* than this.
Next, a normal measurement is performed in the one azimuth mode. The operator
When the wafer 1 is set on the table 8 at the normal position and the measurement is started, δ ₀ ⁺ is obtained in the same manner. The data processing unit 14 calculates a circumferential deviation δ ₀ of the crystal plane normal from the OF plane normal from δ ₀ ⁺ and δ ^* . In this measurement method, both the calibration and the measurement fall to the normal of the crystal plane, that is, the angle deviation δ from the board surface.
It is assumed that there is no ₉₀ . Actually, an error occurs due to the fall, but this error spread is small. For example, normally, if the tilt angle is 0.3 degrees or less, the error generated in δ ^* and δ ₀ is 0.
005 degrees or less, and there is no practical problem.

<Calculation for obtaining δ ^* from δ ₀ ⁺ and δ ₁₈₀ ⁺ >; From FIG. 3, the following expression for obtaining δ ^* is obtained.

Δ ^* = (δ ₀ ⁺⁺ δ ₁₈₀ ⁺ ) / 2 (2) << End.

[0024] <δ ₀ ⁺ and δ ^* from the calculation to determine the δ _0>;
From FIG. 3, the following equation for calculating δ ₀ is obtained.

Δ ₀ = δ ₀ ⁺ −δ ^* (3) <<> End.

Third Measurement Method: The third measurement method uses a calibration mode with tilt angle correction and a one-directional mode with tilt angle correction. This measuring method is almost the same as the second measuring method, but is applicable to a case where the tilt angle is not zero and is known. The operator sets the tilt angle δ for each of the calibration and measurement.
_{When 90} is input, the data processing unit 14 corrects the tilt angle and calculates δ ^* and δ ₀ , respectively. This measurement method is used for measuring an off-cut wafer. The off-cut is to slice the wafer while being shifted from the crystal plane, and 4 off is often used. In this measurement method, the mode at the time of calibration may be the calibration mode if a wafer having a tilt angle of 0 ° is used.
In addition, calibration can be performed in a calibration mode with tilt angle correction using a wafer with a known tilt angle, and a wafer with a tilt angle of 0 ° can be measured in one orientation mode. In the calibration mode with tilt angle correction and the one azimuth mode with tilt angle correction, inputting a tilt angle of 0 degrees gives the same results as the calibration mode and the one azimuth mode, respectively.

<Calculation for obtaining δ ^* from δ ₀ ⁺ , δ ₁₈₀ ^+, and δ ₉₀ (with tilt angle correction)> FIG. 4 is a diagram for explaining the calculation. This is a diagram on a spherical surface showing directions.
The symbols are the same as in FIG. 3, which is the case when δ ₉₀ ≠ 0. δ ₉₀
Indicates the direction of + in the figure. The peak output is obtained when the distance between h and S ₀ , S ₁₈₀ is α. By spherical trigonometry, δ ^* is obtained as follows using δ ₀ , L ₂ , ξ ₀ , and ε ₀ as intermediate variables. Here, the inverse trigonometric function takes a principal value.

[0028]

Δ ₀ = (δ ₀ ⁺ −δ ₁₈₀ ⁺ ) / 2 (4) L ₂ = 90 ° −arcsin [sin δ ₀ · √ ｛(1−sin ² δ ₉₀ ) / (1−sin ² ) δ ₉₀ · sin ² δ ₀ )｝] (5) ξ ₀ = arcsin [｛cos α · sin L ₂ · cos δ ₉₀ −cos L ₂ · √ (cos ² L ₂ + sin ² L ₂ · cos ² δ ₉₀ − cos ² α)｝ / ｛sin ² L ₂ · cos ² δ ₉₀ + cos ² L ₂ ｝] (6) ε ₀ = α + ξ ₀ + δ ₀ -90 ° (7) δ ^* = (δ ₀ ⁺ + Δ ₁₈₀ ⁺ ) / 2 + ε ₀ (8) <<> End.

<Calculation for obtaining δ ₀ from δ ₀ ⁺ , δ ^* and δ ₉₀ (with tilt angle correction)> FIG. 4 is a diagram for explaining the calculation. As with the calculation of δ ^* , δ
_{s0, ξ, L, P 1} , 0 δ The β as an intermediate variable is obtained as follows. Here, the inverse trigonometric function takes a principal value.

[0030]

## EQU2 ## δ _s0 = δ ₀ ⁺ −δ ^* + α (9) ξ = 90 ° −δ _s0 (10) L = arccos [｛cos α · cos ξ −√ (cos ² α · cos ² ξ− ^{(cos 2 ξ + sin 2 ξ} · cos 2 δ 90) · (cos 2 α- sin 2 ξ · cos 2 δ 90))} / {cos 2 ξ + sin 2 ξ · cos 2 δ 90}] ... (11) P ₁ = arcsin (sin L · sin δ ₉₀ ) (12) β = arccos (cos L / cos P ₁ ) (13) δ ₀ = 90 ° −β (14) << End.

The effect of this embodiment will be described. In the first measurement method, the δ reading does not require a special δ rotation calibration because the offset is canceled with respect to the positioning plate 9,
Can be measured accurately. Further, even when the crystal plane is tilted to the normal to the crystal plane, that is, when there is an angular deviation δ ₉₀ from the board surface, the deviation δ ₀ in the circumferential direction can be accurately obtained. In a second measurement method, the calibration amount δ of the δ reading is
^* Can be easily and automatically measured in a short time. As a result, normal measurement can be accurately performed in a short time by measuring only one side. In the third measurement method, since the tilt angle of the crystal plane of the wafer used for calibration is corrected, accurate calibration can be performed without being affected by the tilt angle. In addition, normal measurement corrects the crystal plane tilt angle of the target wafer, so that it is not affected by the tilt angle, and accurate measurement can be performed in a short time by measuring only one side. In particular, measurement can be performed from only one side of an off-cut wafer.

Next, a modification of the first embodiment will be described. In the first embodiment, the X-ray detector may be fixed without rotating δ. However, it is preferable to rotate by δ because the change in the incident position of the X-ray beam 4b is small. The δ rotation may be performed on the wafer side. The first
Although the embodiment has been described by taking a wafer having an OF surface as an example, it is apparent that the present invention can be applied to other wafers such as a wafer having a V-groove. X-rays are not limited to copper _Kα rays.
The line detector may be an ionization chamber or a combination of a scintillator and a fluorescence intensifier.

FIGS. 5 and 6 show a second embodiment of the present invention. In FIGS. 5 and 6 and the drawings showing the respective embodiments to be described later, the same or equivalent components as those in FIG. 1 are denoted by the same reference numerals,
A duplicate description will be omitted. The configuration of the present embodiment will be described with reference to FIG. A wafer 1 which is a disc-shaped crystal is placed on a table 21, and two pressing pins 22a, 22 which are biased by a spring so that the OF surface 17 contacts a positioning plate 9 fixed to one end of the table 21. 22b
Is held down. The table 21 is rotated by the φ drive unit 24 by φ with respect to the table surface, that is, the φ axis perpendicular to the board surface of the wafer 1. The table 21 and the φ drive unit 24 are rotated 90 ° by the Δ drive unit 26 with respect to the χ axis perpendicular to the φ axis.
° rotated. When φ = 0 °, the OF plane 17 and the χ axis are parallel. The δ drive unit 7, the φ drive unit 24 and the χ drive unit 26 are connected to a data processing unit 28 via a mechanism control unit 27. The mechanism control unit 27 receives a drive timing or drive amount command from the data processing unit 28, controls the mechanism unit according to the command, and sends status information of the mechanism unit to the data processing unit 28.

Next, the operation of the present embodiment will be described. In the present embodiment, the side surface and the board surface of the wafer 1 are switched. In the measurement of the side surface, the orientation of the crystal plane to be measured in the circumferential direction with respect to the OF plane 17 is measured. The operator switches the measurement using the display 16 and the keyboard 15.

Side measurement: In the side measurement, φ and χ are set to 0 ° as shown in FIG. 5, and these settings are fixed during the measurement. Then, similarly to the first embodiment, the circumferential direction δ ₀ of the crystal plane to be measured is measured.

Board Surface Measurement: In the board surface measurement, as shown in FIG. 6, χ is set to 90 °, and this setting is fixed during the measurement. For φ, measurement is performed in four directions or two directions at intervals of 90 °. In this measurement, the normal line of the crystal plane to be measured is almost perpendicular to the board surface. First, the operator sets the wafer 1 on the table 21. When the measurement is started, the measurement is performed as follows by a command from the data processing unit 28. φ is set to the first position, X-ray tube 2 is ON
At the same time, the δ rotation starts scanning from the starting point. The X-ray beam 4
When the angle becomes a and α, diffraction occurs and a peak occurs in the output of the X-ray detector 5. At this time, the δ reading value, δ ₀ ^+, is stored. each δ readings change the settings of φ, δ ₉₀ ^+, δ
₁₈₀ ⁺ and δ ₂₇₀ ⁺ are stored (for four directions). From the stored δ readings, deviations δ ₀ and δ ₉₀ of the crystal plane normal from the board surface normal are calculated. Here, δ ₀ is a shift in a direction along the OF surface 17, and δ ₉₀ is a shift in a direction orthogonal to the direction. Since δ ₉₀ obtained by the board surface measurement coincides with the normal inclination angle δ ₉₀ by the side surface measurement, the inclination angle can be corrected in the side surface measurement by reflecting the result of the board surface measurement.

<Calculation for obtaining δ ₀ , δ ₉₀ from δ ₀ ⁺ , δ ₉₀ ⁺ , δ ₁₈₀ ⁺ , δ ₂₇₀ ⁺ >; δ ₀ = (δ ₀ ⁺ −δ ₁₈₀ ⁺ ) / 2 (15) δ ₉₀ = (Δ ₉₀ ⁺ −δ ₂₇₀ ⁺ ) / 2 (16) <<> End.

The effect of the present embodiment will be described. According to the present embodiment, the crystal orientation of both the board surface and the side surface of the wafer can be measured by one apparatus. In addition, since the tilt angle of the crystal plane can be determined by the board surface measurement, the reflected angle can be reflected to improve the accuracy of the side surface measurement.

Next, a modification of the second embodiment will be described. In the present embodiment, a wafer having an OF surface is taken as an example, but it is apparent that the present invention can be applied to other wafers, for example, wafers having V grooves. The board surface measurement and the side surface measurement can be automatically performed continuously. At this time, it can be used for correcting the [delta] ₉₀ obtained in board measured as automatically tilt angle. Air suction may be used to improve the adhesion of the wafer to the table. In addition, an automatic wafer supply device can be provided so as to be fully automatic, so that it is possible to cope with 100% inspection.

FIG. 7 shows a third embodiment of the present invention. The structure of the mechanism of the present embodiment will be described. A crystal ingot 31 which is a columnar crystal to be measured is held on a holding table 32.
It is supported by the upper two holding plates 33a and 33b. 2
The two holding plates 33a and 33b are mirror images of each other with respect to the center plane 34, and are made of Teflon or the like which has little friction. An engagement plate 36 that engages with the V-shaped groove 35 is disposed on the center plane 34 between the two holding plates 33a and 33b, and guides 37 move along the center plane 34.
a and 37b. The engagement plate 36 is urged by a spring 38 and is engaged with the V groove 35. Thus, the crystal ingot 31 is positioned so that the direction of the V-groove 35 with respect to the center O is always in the direction of the center plane 34. The measurement unit is arranged on one end side of the crystal ingot 31. The X-ray tube 2 that emits the X-ray beam 4a toward the point C, which is one point on the end face of the crystal ingot 31, and the X-ray detector 5 that detects the X-ray beam 4b diffracted at the point C pass through the point C. The δ drive unit 39 integrally rotates the δ axis by δ with respect to the δ axis perpendicular to the ingot axis. The X-ray tube 2, the X-ray detector 5, and the δ drive unit 39 are integrally rotated by the φ drive unit 40 with respect to the φ axis passing through the point C and parallel to the ingot axis (the ingot axis and the φ axis coincide with each other). It does not have to be). The configuration of the parts other than the mechanical part is the first or second
This is almost the same as the embodiment.

Next, the operation of the present embodiment will be described. The operator places the crystal ingot 31 on the holding table 32,
The crystal ingot 31 is rotated about the ingot axis. When the engagement plate 36 engages with the V-shaped groove 35, the crystal ingot 31 is fixed. As a result, even if the crystal ingot 31 is replaced and the diameter changes, the direction of the V groove 35 is always positioned in the direction of the center plane 34. For measurement, set φ and δ
To search for the output peak of the X-ray detector 5. Then, in the same manner as in the second embodiment, the deviation of the target crystal plane normal from the end face normal is obtained.

The effect of the present embodiment will be described. According to the present embodiment, heavy crystal ingot 31 is
5 can be accurately positioned. With a simple mechanism,
Since the crystal ingot 31 is not pushed and moved by the engagement plate 36 through the V groove 35, there is an advantage that the durability of the engagement plate 36 is good. Further, even if the diameter of the crystal ingot 31 changes, accurate positioning can be achieved.

A modification of the third embodiment will be described with reference to FIG. This modification is different from the first embodiment in a portion for holding the crystal ingot 31. The crystal ingot 31 is a holding table 32
It is supported by the upper two holding rollers 41a and 41b. The two holding rollers 41a and 41b are parallel and arranged at mirror image positions with respect to the center plane 34. The photo sensor 44 detects the position of the engagement plate 36 and detects the position of the engagement plate 3.
6 is output when engaged with the V groove 35. The holding roller 41a is rotated by a motor 42 via a belt 43. The holding roller 41a, 41b and the motor 42 constitute a rotating means. The crystal ingot 31 is rotated by the rotation of the holding roller 41a.
Is engaged with the V groove 35, the friction is adjusted so that the holding roller 41a or the belt 43 idles. Both the photo sensor 44 and the motor 42 are connected to a data processing unit (not shown) for signal transmission and control.

The operation of this modification will be described. The operator
When the crystal ingot 31 is placed on the holding rollers 41a and 41b and the measurement is started, the data processing unit rotates the holding roller 41a, detects the engagement of the engagement plate 36 with the V groove 35, and stops the rotation. Thereafter, the measurement is performed as in the third embodiment. Here, the holding roller 41a is rotated by the motor 42, but may be manually rotated. At this time, the photo sensor 44 may not be provided, but may be used for the positioning end display.

The effect of this modification will be described. The effect of this modified example is almost the same as that of the third embodiment, but there is an additional advantage that positioning is automatically performed. In the case of manual rotation, the holding rollers 41a, 41
There is an advantage that the rotation becomes smooth by b.

FIG. 9 shows a fourth embodiment of the present invention. The mechanical portion of the present embodiment is obtained by changing the portion for positioning the wafer of the first embodiment for a wafer with a V-groove, and the other portions are substantially the same. The components other than the mechanism are the same as those of the first embodiment. Describing the configuration of the mechanism of the present embodiment, the wafer 1 is placed on the table 51. A rail 53 is attached to the table 51 along the table surface so as not to interfere with the wafer 1. Slide plates 54 and 55 are supported on the rail 53 so as to slide, and the slide plate 54 is fixed by a clamp 58. One end of the slide plate 55 is connected to the slide plate 54 by a spring 62. An engagement pin 57 that engages with the V groove 65 is mounted on the slide plate 55 so as to be urged by a spring 63 to slide in the same direction. On the slide plate 55, two holding pins 52a and 52b are further mounted via an arm 56 so as to be symmetrical with respect to the slide track of the engaging pin 57 on the table 51 surface. One end of the slide plate 55 is connected to a lever 59 having a rotation axis on the slide plate 54. A fixing pin 60 is fixed to one end of the table 51 so as to face the holding pins 52a and 52b so as to position the wafer 1. Further, pins 61 are provided so as to press the wafer 1 with a spring 64.

Next, the operation of the present embodiment will be described. The operator first moves the slide plate 54 in accordance with the size according to the type of the wafer 1 and fixes the slide plate 54 with the clamp 58.
Next, the holding pins 52a and 52b are moved to the right using the lever 59, the wafer 1 is placed so that the V-groove 65 is aligned with the engaging pin 57, and the lever 59 is returned. Pressing pins 52a, 5
2b moves in conjunction with the sliding direction by a spring 62, and fixes the wafer 1 in cooperation with the fixing pins 60. At the same time, the engagement pin 57 engages with the V groove 65. The pins 61 cooperate with this to hold the wafer 1 in the center direction and prevent the wafer 1 from coming off due to the initial displacement. Thus, even if the diameter is changed instead of the wafer 1, the direction of the V groove 65 as viewed from the center O of the wafer is always the sliding direction. Subsequent measurements are the same as in the first embodiment. In the present embodiment, the positioning of the wafer 1 is performed by the fixing pins 60 and the holding pins 52a and 52b, and the pins 61 have an auxiliary role and are not essential.

The effect of the present embodiment will be described. According to the present embodiment, the positioning of the wafer 1 with the V-shaped groove 65 can be performed accurately. Wafers of different sizes can be accommodated, and the direction of the V groove 65 can be made constant.

Next, a modification of the fourth embodiment will be described. Each pin may be tapered so as to become thinner toward the surface of the table 51. As a result, the wafer 1 can be prevented from rising from the table surface, and the measurement accuracy can be increased. Each pin may be a rotating roller, and one of them may be rotated by a motor or manually to rotate the wafer 1. Thus, when the wafer 1 is placed, V
There is no need to align the grooves. First, the wafer 1 is sandwiched and then rotated to align the V-groove. After the engagement, the rotation idles. When the wafer 1 is rotated, the placement of the wafer 1 by the operator is facilitated, and the automation of the placement is also facilitated.

FIG. 10 shows a fifth embodiment of the present invention. The mechanism of this embodiment is a modification of the fourth embodiment in which the portion for positioning the wafer is changed, and the other portions are substantially the same. Explaining the structure of the mechanism of the present embodiment, rails 72 are attached to the table 51 along the table surface so as not to interfere with the wafer 1. Slide plates 73 and 74 are slidably supported on the rail 72, and the slide plate 73 is slid by a slide drive unit 76. A photo sensor 83 is provided on the slide plate 73, and the slide plate 74
Receives the light reflected by the light source and outputs an output when the slide plate 74 reaches a predetermined distance. One end of the slide plate 74 is connected to the slide plate 73 by a spring 80. An engagement pin 57 that engages with the V groove 65 is mounted on the slide plate 74 so as to be urged by a spring 81 and slide in the same direction. Slide plate 7
Further, two holding rollers 71 a and 71 b are attached to the table 4 via an arm 75 so as to be symmetrical with respect to the slide track of the engagement pin 57 on the table 51. A fixed roller 77 is fixed to one end of the table 51 so as to face the pressing rollers 71a and 71b to position the wafer 1, and a roller 78 is installed so as to press the wafer 1 by a spring 82. Each of the rollers 71, 77, 78 is mounted so as to rotate with respect to an axis perpendicular to the surface of the table 51. The rollers 71, 77 rotate freely, and the roller 78 is rotated by a motor 79. . This roller 7
8 and a motor 79 constitute rotating means. The motor 79, the slide drive unit 76, and the photo sensor 83 are connected to a data processing unit (not shown) via a mechanism control unit (not shown).

Next, the operation of the present embodiment will be described. The operator first inputs the type of the wafer 1 and a wafer mounting command from the keyboard. The data processing unit moves the slide plate 73 to the right according to the size according to the type of the wafer 1 and fixes it. Slide plate 74 connected to spring 80
Accordingly, the pressing rollers 71a and 71b also move rightward. In this state, the operator places the wafer 1 and inputs the start of measurement. The data processing unit moves the slide plate 73 to the left until the output of the photo sensor 83 is fixed. In this state, the pressing rollers 71a and 71b are urged in conjunction with the sliding direction by the spring 81, and are fixed.
To fix the wafer 1. Next, the motor 79 is rotated and the wafer 1 is rotated by the rollers 78. When the engagement pin 57 is engaged with the V-shaped groove 65, the roller 78 idles, and then the motor 79 is stopped, and the positioning of the wafer 1 is completed. As a result, even if the diameter is changed instead of the wafer 1, the direction of the V-groove 56 as viewed from the center O of the wafer is always the sliding direction. Subsequent measurements are the same as in the first embodiment. Although the rotation of the wafer 1 is performed by the roller 78 in the present embodiment, the rotation may be performed by the fixed roller 77 or the pressing rollers 71a and 71b. In addition, the engagement pin 5
7 may be a roller. Alternatively, a position sensor may be attached to the engagement pin 57 to detect the engagement and stop the motor 79. The photo sensor 83 may be a mechanical switch.

The effect of the present embodiment will be described. According to the present embodiment, the positioning of the wafer 1 with the V-shaped groove 65 can be performed accurately. Wafers of different sizes can be accommodated, and the direction of the V groove 65 can be made constant. In addition, the placement of the wafer 1 by an operator is facilitated, and the automation of the placement is also facilitated.

Next, a modification of the fifth embodiment will be described with reference to FIG. This modification is a modification of the fifth embodiment in which the portion for positioning the wafer is changed, and the other portions are the same. A rail 72 is attached to the table 51 along the table surface so as not to interfere with the wafer 1. A slide plate 84 is slidably supported on the rail 72, and the slide plate 84 is slid by a slide drive unit 76. Slide plate 8
An engagement pin 57 that engages with the V groove 65 is mounted on the top 4 so as to be urged by a spring 81 and slide in the same direction. The arm 7 is further attached to the slide plate 84.
The two pressing rollers 71 a, 71 b are mounted on the table 51 so as to be symmetrical with respect to the slide track of the engaging pin 57 via the surface 5. A roller 78 is provided at one end of the table 51 so as to face the pressing rollers 71a and 71b.
Rollers 85 are disposed, and springs 82 and 86 are respectively provided.
The wafer 1 is positioned by pressing the wafer. Each of the rollers 71, 78, 85 is mounted so as to rotate about an axis perpendicular to the surface of the table 51, the rollers 71, 85 rotate freely, and the rollers 78 are rotated by a motor 79. . Table 51
A photo sensor 87 is mounted near point C (measurement point) at one end of the wafer 1 so as not to interfere with the wafer 1.
And outputs an output when the wafer 1 covers the point C. The surface of the table 51 has a large number of suction holes v, and each suction hole v is connected to a pump 89 by a pipe 88. The wafer 1 is sucked to the table 51 by evacuating with the pump 89. The motor 79, the slide drive unit 76, the photo sensor 87, and the pump 89 are connected to a data processing unit (not shown) via a mechanism control unit (not shown).

The operation of this modification will be described. The operator
First, the type of the wafer 1 and a wafer mounting command are input from a keyboard. The data processing unit moves the slide plate 84 to the right according to the size according to the type of the wafer 1 and fixes it. In this state, the operator places the wafer 1 and inputs the start of measurement. The data processing unit moves the slide plate 84 to the left until the output of the photo sensor 87 is received, and fixes the slide plate 84. In this state, the rollers 78 and 85 are connected to the springs 82 and 8 respectively.
6 to fix the wafer 1 in cooperation with the pressing rollers 71a and 71b. At this time, the tip of the wafer 1 is in a state in which it matches the point C. Next, the motor 79 is rotated and the wafer 1 is rotated by the rollers 78. When the engagement pin 57 is engaged with the V-shaped groove 65, the roller 78 is idled,
Next, the motor 79 is stopped, the wafer 1 is sucked to the table 51 by the pump 89, and the positioning is completed. Thus, even if the diameter is changed instead of the wafer 1, the direction of the V-groove 65 as viewed from the center O of the wafer is always in the sliding direction, and the tip of the wafer 1 is always in the state of point C. Subsequent measurements are the same as in the first embodiment.

The effect of this modification will be described. According to this modification, the positioning of the wafer 1 with the V-groove 65 can be performed accurately. The wafers 1 of different sizes can be accommodated, the direction of the V-shaped groove 65 can be made constant, and the edge of the wafer 1 can be accurately aligned with the measurement point. Also,
The suction eliminates the lifting of the wafer 1 and improves the positioning accuracy. In addition, the placement of the wafer 1 by an operator is facilitated, and the automation of the placement is also facilitated.

FIG. 12 shows a sixth embodiment of the present invention. The mechanism of this embodiment is a modification of the fourth embodiment in which the portion for positioning the wafer is changed, and the other portions are substantially the same. FIG. 12 shows a state in which the table on which the wafer 1 is mounted is removed so that the mechanism can be easily seen. The structure of the mechanism of the present embodiment will be described. The rotating plate 94 is rotated around a fixed plate 93 by a motor 95, and the links 91a and 92a, 91b and 92
Three rollers 90a, 90b, 90c as positioning members connected by b, 91c and 92c respectively rotate inwardly symmetrically with respect to the rotation axis O to press the outer periphery of the wafer 1. At this time, it is elastically pressed by the action of the belt 96 and the springs 97a and 97b. Next, when the wafer 1 is rotated by the motor 101 pressed against the outer periphery by the spring 102 and the engagement pins 98 urged by the spring 100 engage with the V-grooves 65, the motor 101 idles and stops. Thus, the positioning of the wafer 1 is completed. Even if the diameter is changed instead of the wafer 1, the direction of the V-groove 65 as viewed from the center O of the wafer is always constant. In this embodiment, three rollers 90a, 90b, and 90c are used, but four rollers can be similarly positioned.

The effect of the present embodiment will be described. According to the present embodiment, the positioning of the wafer 1 with the V-shaped groove 65 can be performed accurately. Wafers of different sizes can be accommodated, and the direction of the V groove 65 can be made constant. In addition, the placement of the wafer 1 by an operator is facilitated, and the automation of the placement is also facilitated. Further, three rollers 90a, 90b, 90
Since it is sandwiched symmetrically from the periphery by c, positioning can be performed reliably.

A modification of the sixth embodiment will be described with reference to FIG. In this modification, the link mechanism of the sixth embodiment is replaced with a cam mechanism. The table 108 is provided with three rollers 90a, 90b, 90c in the slide groove 10.
3a, 103b, and 103c are held so as to slide radially, and rollers 90a, 90b, and 90c are moved by cams 10 through pins 104a, 104b, and 104c, respectively.
5 are joined to the grooves 106a, 106b, 106c. When the cam 105 is rotated by the motor 95, the three rollers 90a, 90b, and 90c move symmetrically inward in the slide grooves 103a, 103b, and 103c with respect to the rotation axis O, and press the outer periphery of the wafer 1. At this time, the belt 96
And the spring 97 acts elastically. Subsequent steps are the same as in the sixth embodiment. In this modification, the slide grooves 103a, 103b, and 103c are radial, but need not necessarily face the center, as long as the movement is symmetrical with respect to the rotation axis O. The number of rollers may be four.

The effect of this modification is similar to the effect of the sixth embodiment.

[0060]

As described above, according to the first aspect of the present invention, when the subject, which is a substantially disc-shaped crystal, is rotated by δ at each of the normal position and the front / back inversion position, the X is obtained.
Δ readings δ ₀ ⁺ and δ giving the peak output of the line detector
Wherein from ₁₈₀ ⁺ for was provided with a data processing unit for calculating the orientation of the circumferential direction of the predetermined crystal plane with respect to the mark of the subject by calculating the average of the [delta] ₀ ⁺ and [delta] ₁₈₀ ^+, with respect to the reference position of the [delta] Rotation The crystal orientation can be determined accurately, and the measurement of the reference position of the rotation angle is not required.

According to the second aspect of the present invention, the peak output of the X-ray detector is given when the first specimen, which is a substantially disc-shaped crystal, is rotated δ at each of the normal position and the front / back inversion position. The calibration amount of the δ rotation is calculated and stored from the δ readings δ ₀ ⁺ and δ ₁₈₀ ⁺ , and the peak output of the X-ray detector when the δ rotation is performed at the normal position for the second subject is calculated. Second from the given δ reading δ ₀ ⁺ and the calibration amount
Since a data processing unit for calculating the orientation of a predetermined crystal plane in the circumferential direction with respect to the mark of the subject is provided, the calibration amount of δ rotation can be easily and automatically measured in a short time, which is a normal measurement. With respect to the second specimen, the crystal plane orientation with respect to the reference position can be accurately obtained in a short time by measuring only one surface of the normal position.

According to the third aspect of the present invention, the data processing unit is configured to calculate a normal of the predetermined crystal plane of the first object or the second object input from the outside as a known amount. Since the tilt angle is corrected based on the tilt angle δ ₉₀ from the board surface to calculate the calibration amount or the orientation of the predetermined crystal plane in the circumferential direction, the second object which is a normal measurement is used. With only one side measurement of the normal position,
The crystal plane orientation with respect to the reference position can be accurately obtained in a short time without being affected by the tilt angle.

According to the fourth aspect of the present invention, the subject is moved by 90 degrees with respect to the χ axis which is parallel to the board surface of the subject which is a substantially disk-shaped crystal and is substantially perpendicular to the direction connecting the center of the subject and the point C.
A rotating mechanism for rotating the subject so that the X-ray beam impinges on the point C ′ on the board, and a φ rotating mechanism for rotating the subject by φ about a φ axis orthogonal to the board,
Since the orientation of a predetermined crystal plane in a direction substantially orthogonal to the board surface is measured, one apparatus can measure the predetermined crystal plane orientation of both the side surface and the board surface of a wafer (disk-shaped crystal). .

According to the fifth aspect of the present invention, a pair of positioning members abutting on the side surface of the subject which is a substantially columnar crystal and has a groove indicating an orientation on the side surface, and an intermediate portion between the pair of positioning members. And an engaging member that engages with the groove, the crystal ingot (columnar crystal) having a relatively large weight can be accurately positioned based on the groove even if its diameter changes.

According to the sixth aspect of the present invention, the first two positioning members abutting on the side surface of the subject which is a substantially disc-shaped crystal, and the first positioning member disposed between the two positioning members and engaged with the groove are provided. A mating engagement member and a second positioning member that sandwiches the subject in opposition to the first two positioning members, so that a grooved wafer can be formed with a groove even if its size is different. It can be positioned accurately to the reference.

According to the seventh aspect of the present invention, three or more positioning members abutting on the side surface of the subject which is a substantially disc-shaped crystal, and the positioning members are attached to one axis substantially perpendicular to the board surface. Since a mechanism for symmetrically moving and positioning and fixing the subject and an engaging member that engages with the groove in this positioning state are provided, a grooved wafer is provided.
Even if the size is different, accurate positioning can be performed based on the groove, and manual and automatic replacement of wafers can be easily performed.

According to the eighth aspect of the present invention, when the object is positioned, the rotating means for rotating the object with respect to its cylindrical axis or disk axis is provided, so that the crystal ingot or wafer whose side surface is supported by the positioning member is provided. By rotating the shaft with respect to its axis, positioning can be performed more accurately and easily with reference to the groove.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a crystal orientation measuring apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing calculation coordinates in the first embodiment.

FIG. 3 is a diagram for explaining calculations of first and second measurement methods in the first embodiment.

FIG. 4 is a diagram for explaining calculation of a third measurement method in the first embodiment.

FIG. 5 is a configuration diagram showing a second embodiment of the present invention.

FIG. 6 is a diagram for explaining the operation of the second embodiment.

FIG. 7 is a configuration diagram illustrating a mechanism section according to a third embodiment of the present invention.

FIG. 8 is a configuration diagram illustrating a mechanism section of a modification of the third embodiment.

FIG. 9 is a configuration diagram illustrating a mechanism section according to a fourth embodiment of the present invention.

FIG. 10 is a configuration diagram illustrating a mechanism section according to a fifth embodiment of the present invention.

FIG. 11 is a configuration diagram showing a mechanism of a modification of the fifth embodiment.

FIG. 12 is a configuration diagram illustrating a mechanism section according to a sixth embodiment of the present invention.

FIG. 13 is a configuration diagram showing a mechanism section of a modification of the sixth embodiment.

FIG. 14 is a configuration diagram of a conventional crystal orientation measuring apparatus.

[Explanation of symbols]

Reference Signs List 1 wafer (disk-shaped crystal) 2 X-ray tube (X-ray source) 5 X-ray detector 6 δ frame 7, 39 δ drive unit 9a, 9b Positioning plate (positioning means) 14, 28 Data processing unit 17 OF plane ( Mark) 24, 40 φ drive unit 26 χ drive unit 31 Crystal ingot (columnar crystal) 33a, 33b Holding plate (positioning member) 35, 65 V groove 36 Engaging plate (engaging member) 41a, 41b Holding roller 42 Holding roller Motors 52a and 52b which together form rotating means Pressing pins (two positioning members) 57 Engaging pins (engaging members) 60 Fixing pins (second positioning members) 71a and 71b Pressing rollers 78 Rollers 79 Constituent motors 90a, 90b, 90c Rollers (three or more positioning members) 91a, 91b, 91c, 92a, 92b Motor serving as a 92c link 95 rotating means

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kenji Arai 2-24-24 Harumi-cho, Fuchu-shi, Tokyo Toshiba FA System Engineering Co., Ltd. (72) Inventor Hiroshi Matsushita 2--24 Harumi-cho, Fuchu-shi, Tokyo No. 1 Toshiba FA System Engineering Co., Ltd. (72) Inventor Hiroshi Mizuguchi 2-24-24 Harumi-cho, Fuchu-shi, Tokyo In-house 1 (72) Inventor Masaharu Shinohara Harumi, Fuchu-shi, Tokyo 2-24-24, Toshiba F-System Engineering Co., Ltd. (72) Inventor Masaaki Sonoda 2--24-1, Harumicho, Fuchu-shi, Tokyo Toshiba F-System Engineering Co., Ltd. (72) Inventor Masami Tomizawa Tokyo 2 Harumicho, Fuchu-shi Eye 24 at address 1 East turf Efue system engineering stock company in the F-term (reference) 2G001 AA01 AA09 BA18 CA01 DA01 DA02 GA13 JA11 KA08 LA11 MA05 MA06 PA14 QA01 QA03 SA02 4M106 AA01 AA07 AB15 AB17 CB17 DH25 DH34 DJ06 DJ07 DJ19 DJ20 DJ21

Claims (8)

[Claims] 1. A positioning means for positioning a subject, which is a substantially disc-shaped crystal and having a mark indicating an azimuth around it, based on the mark, and a point on a side surface of the subject along the board surface of the subject. X that emits an X-ray beam toward point C
A source, an X-ray detector that detects diffracted X-rays diffracted along the board surface from the point C, and the X-ray source and the X-axis with respect to a δ axis that is orthogonal to the board surface and substantially passes through the point C. A δ rotation mechanism for integrally rotating a line detector relative to the object, and a crystal orientation measuring device for measuring an orientation of the predetermined crystal plane in a circumferential direction with respect to the mark of the object. From the δ readings δ ₀ ⁺ and δ ₁₈₀ ⁺ giving the peak output of the X-ray detector when the δ rotation is performed at the normal position and the front / back reversal position for the specimen, respectively, A crystal orientation measuring device comprising a data processing unit for calculating the orientation of a predetermined crystal plane. 2. A positioning means for positioning a subject which is a substantially disc-shaped crystal and has a mark indicating an azimuth around the crystal based on the mark, and a point on a side surface of the subject along the board surface of the subject. X that emits an X-ray beam toward point C
A source, an X-ray detector that detects diffracted X-rays diffracted along the board surface from the point C, and the X-ray source and the X-axis with respect to a δ axis that is orthogonal to the board surface and substantially passes through the point C. A δ rotation mechanism for integrally rotating a line detector relative to the subject, and a crystal orientation measuring device for measuring an orientation of the predetermined crystal plane in a circumferential direction with respect to the mark of the subject, the said [delta] readings gives a peak output of the X-ray detector when performing rotation the [delta], respectively a normal position and reversed positions on the subject [delta] ₀ ⁺ and [delta] ₁₈₀ ⁺
And stored in more compute the calibration amount of the [delta] rotation, the second of the said [delta] readings gives a peak output of the X-ray detector when performing rotation the [delta] in a normal position [delta] ₀ ⁺ a about the subject A crystal orientation measurement apparatus, comprising: a data processing unit that calculates an orientation of the predetermined crystal plane in a circumferential direction with respect to the mark of the second object based on a calibration amount. 3. The tilt angle δ ₉₀ of the normal of the predetermined crystal plane of the first object or the second object input from the outside as a known amount from the board surface. 3. The crystal orientation measuring apparatus according to claim 2, wherein the tilt angle is corrected based on the above, and the calibration amount or the orientation of the predetermined crystal plane in the circumferential direction is calculated. 4. A positioning means for positioning a subject which is a substantially disc-shaped crystal and has a mark indicating an azimuth around the crystal based on the mark, and a point on the side surface of the subject along the board surface of the subject. X that emits an X-ray beam toward point C
A source, an X-ray detector that detects diffracted X-rays diffracted along the board surface from the point C, and the X-ray source and the X-axis with respect to a δ axis that is orthogonal to the board surface and substantially passes through the point C. A δ rotation mechanism for integrally rotating a line detector relative to the subject, and a crystal orientation measuring device for measuring an orientation of the predetermined crystal face in a circumferential direction with respect to the mark of the subject, The subject is moved 90 degrees with respect to the 平行 axis which is parallel to and substantially orthogonal to the direction connecting the center of the subject and the point C.
A rotating mechanism for rotating the subject so that the X-ray beam impinges on the point C ′ on the board, and a φ rotating mechanism for rotating the subject by φ about a φ axis orthogonal to the board,
A crystal orientation measuring device for measuring an orientation of the predetermined crystal plane in a direction substantially perpendicular to the board surface. 5. An X-ray source for irradiating an X-ray beam to an object which is a substantially columnar crystal having a side surface, an upper surface, and a lower surface and having a groove indicating an azimuth on the side surface, and a predetermined crystal surface in the object. An X-ray detector for detecting diffracted diffracted X-rays, wherein in the crystal orientation measurement device for measuring the orientation of the predetermined crystal plane with respect to the groove and the upper and lower surfaces, the crystal abutment is in contact with the side surface of the subject A pair of positioning members,
A crystal orientation measuring device, comprising: an engaging member disposed in the middle of the pair of positioning members and engaging with the groove. 6. An X-ray which emits an X-ray beam along a board surface of a subject having a substantially disc-shaped crystal and having a groove indicating an azimuth around the subject toward a point C which is one point on the side surface of the subject. A source, an X-ray detector that detects diffracted X-rays diffracted along the board surface from the point C, and the X-ray source and the X-rays with respect to a δ axis that is orthogonal to the board surface and substantially passes through the point C. A δ rotation mechanism for integrally rotating a detector relative to the subject; and a crystal orientation measuring device for measuring an orientation of the predetermined crystal plane in a circumferential direction with respect to the groove of the subject. First two positioning members abutting the side surfaces of
An engagement member is provided between the two positioning members and engages with the groove, and a second positioning member is provided to face the subject in opposition to the first two positioning members. Crystal orientation measuring device. 7. An X-ray that emits an X-ray beam along a board surface of a subject having a substantially disc-shaped crystal and a groove indicating an azimuth around the subject toward a point C which is one point on the side surface of the subject. A source, an X-ray detector that detects diffracted X-rays diffracted along the board surface from the point C, and the X-ray source and the X-rays with respect to a δ axis that is orthogonal to the board surface and substantially passes through the point C. A δ rotation mechanism for integrally rotating a detector relative to the subject; and a crystal orientation measuring device for measuring an orientation of the predetermined crystal plane in a circumferential direction with respect to the groove of the subject. Three or more positioning members that abut against the side surface of the subject; a mechanism that moves the positioning member symmetrically with respect to one axis substantially perpendicular to the board surface to position and fix the subject; And an engaging member for engaging. To the crystal orientation measuring device. 8. The crystal orientation measuring apparatus according to claim 5, further comprising rotating means for rotating the object with respect to its cylindrical axis or disk axis when positioning the subject.