ITTO920929A1 - Dispositivo a semiconduttore e procedimento per la sua fabbricazione - Google Patents

Dispositivo a semiconduttore e procedimento per la sua fabbricazione

Info

Publication number
ITTO920929A1
ITTO920929A1 IT000929A ITTO920929A ITTO920929A1 IT TO920929 A1 ITTO920929 A1 IT TO920929A1 IT 000929 A IT000929 A IT 000929A IT TO920929 A ITTO920929 A IT TO920929A IT TO920929 A1 ITTO920929 A1 IT TO920929A1
Authority
IT
Italy
Prior art keywords
procedure
manufacture
semiconductor device
semiconductor
Prior art date
Application number
IT000929A
Other languages
English (en)
Inventor
Takuoa Matsusako
Kazumasa Satsuma
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITTO920929A0 publication Critical patent/ITTO920929A0/it
Publication of ITTO920929A1 publication Critical patent/ITTO920929A1/it
Application granted granted Critical
Publication of IT1258717B publication Critical patent/IT1258717B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
ITTO920929A 1991-11-25 1992-11-17 Dispositivo a semiconduttore e procedimento per la sua fabbricazione. IT1258717B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3308946A JP2721607B2 (ja) 1991-11-25 1991-11-25 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
ITTO920929A0 ITTO920929A0 (it) 1992-11-17
ITTO920929A1 true ITTO920929A1 (it) 1994-05-17
IT1258717B IT1258717B (it) 1996-02-27

Family

ID=17987160

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO920929A IT1258717B (it) 1991-11-25 1992-11-17 Dispositivo a semiconduttore e procedimento per la sua fabbricazione.

Country Status (4)

Country Link
US (1) US5489793A (it)
JP (1) JP2721607B2 (it)
DE (1) DE4239463C2 (it)
IT (1) IT1258717B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213943A (ja) * 1996-01-29 1997-08-15 Mitsubishi Electric Corp パワーｍｏｓｆｅｔの製造方法
DE10209073A1 (de) * 2002-02-28 2003-09-18 Infineon Technologies Ag Halbleiterchip, sowie Verfahren und Vorrichtung zur Herstellung des Halbleiterchips
US6870206B2 (en) 2001-11-27 2005-03-22 Infineon Technologies Ag Semiconductor chip, fabrication method, and device for fabricating a semiconductor chip

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
US4144493A (en) * 1976-06-30 1979-03-13 International Business Machines Corporation Integrated circuit test structure
US4413271A (en) * 1981-03-30 1983-11-01 Sprague Electric Company Integrated circuit including test portion and method for making
DE3850790T2 (de) * 1987-02-09 1994-12-22 Fujitsu Ltd Gatematrix mit in Verbindungsgebiet begrabenem Transistor.
JP2776549B2 (ja) * 1989-04-03 1998-07-16 日本電気アイシーマイコンシステム 株式会社 半導体集積回路
JPH03104169A (ja) * 1989-09-18 1991-05-01 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
DE4239463A1 (en) 1993-05-27
ITTO920929A0 (it) 1992-11-17
JP2721607B2 (ja) 1998-03-04
IT1258717B (it) 1996-02-27
US5489793A (en) 1996-02-06
JPH05144906A (ja) 1993-06-11
DE4239463C2 (de) 1995-01-26

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129