ITMI20022387A1 - Circuito per programmare un dispositivo di memoria non-volatile con - Google Patents

Circuito per programmare un dispositivo di memoria non-volatile con

Info

Publication number
ITMI20022387A1
ITMI20022387A1 IT002387A ITMI20022387A ITMI20022387A1 IT MI20022387 A1 ITMI20022387 A1 IT MI20022387A1 IT 002387 A IT002387 A IT 002387A IT MI20022387 A ITMI20022387 A IT MI20022387A IT MI20022387 A1 ITMI20022387 A1 IT MI20022387A1
Authority
IT
Italy
Prior art keywords
program
circuit
memory device
volatile memory
volatile
Prior art date
Application number
IT002387A
Other languages
English (en)
Inventor
Rino Micheloni
Roberto Ravasio
Original Assignee
Simicroelectronics S R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simicroelectronics S R L filed Critical Simicroelectronics S R L
Priority to IT002387A priority Critical patent/ITMI20022387A1/it
Priority to EP03104130.4A priority patent/EP1420415B1/en
Priority to US10/706,306 priority patent/US6956773B2/en
Publication of ITMI20022387A1 publication Critical patent/ITMI20022387A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
IT002387A 2002-11-12 2002-11-12 Circuito per programmare un dispositivo di memoria non-volatile con ITMI20022387A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT002387A ITMI20022387A1 (it) 2002-11-12 2002-11-12 Circuito per programmare un dispositivo di memoria non-volatile con
EP03104130.4A EP1420415B1 (en) 2002-11-12 2003-11-10 A circuit for programming a non-volatile memory device with adaptive program load control
US10/706,306 US6956773B2 (en) 2002-11-12 2003-11-12 Circuit for programming a non-volatile memory device with adaptive program load control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002387A ITMI20022387A1 (it) 2002-11-12 2002-11-12 Circuito per programmare un dispositivo di memoria non-volatile con

Publications (1)

Publication Number Publication Date
ITMI20022387A1 true ITMI20022387A1 (it) 2004-05-13

Family

ID=32170734

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002387A ITMI20022387A1 (it) 2002-11-12 2002-11-12 Circuito per programmare un dispositivo di memoria non-volatile con

Country Status (3)

Country Link
US (1) US6956773B2 (it)
EP (1) EP1420415B1 (it)
IT (1) ITMI20022387A1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842379B2 (en) * 2003-02-13 2005-01-11 Broadcom Corporation Non-volatile memory apparatus and method capable of controlling the quantity of charge stored in memory cells
US7379372B2 (en) * 2004-09-15 2008-05-27 Samsung Electronics Co., Ltd. Non-volatile memory device with scanning circuit and method
ITMI20052350A1 (it) * 2005-12-09 2007-06-10 St Microelectronics Srl Metodo di programmazione di celle di memoria in particolare di tipo flash e relativa architettura di programmazione
KR100824141B1 (ko) * 2006-09-29 2008-04-21 주식회사 하이닉스반도체 반도체 메모리 소자
US8213243B2 (en) * 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
US8644073B2 (en) 2011-02-28 2014-02-04 Stmicroelectronics S.R.L. Non-volatile memory device with improved programming management and related method
US8902667B2 (en) * 2012-07-25 2014-12-02 Freescale Semiconductor, Inc. Methods and systems for adjusting NVM cell bias conditions for program/erase operations to reduce performance degradation
US9142315B2 (en) * 2012-07-25 2015-09-22 Freescale Semiconductor, Inc. Methods and systems for adjusting NVM cell bias conditions for read/verify operations to compensate for performance degradation
US8873316B2 (en) 2012-07-25 2014-10-28 Freescale Semiconductor, Inc. Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation
US9032140B2 (en) * 2013-01-28 2015-05-12 Infineon Technologies Ag System and method for adaptive bit rate programming of a memory device
CN105009005B (zh) * 2013-02-19 2018-05-11 英派尔科技开发有限公司 可编程逻辑电路中硬件加速器镜像的测试与修复
CN111312317B (zh) * 2018-12-12 2022-03-01 北京兆易创新科技股份有限公司 一种非易失存储器控制方法以及装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644531A (en) * 1995-11-01 1997-07-01 Advanced Micro Devices, Inc. Program algorithm for low voltage single power supply flash memories
US6008620A (en) * 1996-04-05 1999-12-28 Sony Corporation Battery charging device, method for charging battery pack and battery pack
US5930168A (en) * 1998-03-20 1999-07-27 Micron Technology, Inc. Flash memory with adjustable write operation timing
JPH11272427A (ja) * 1998-03-24 1999-10-08 Hitachi Ltd データ退避方法および外部記憶装置
JP2000163323A (ja) * 1998-11-26 2000-06-16 Canon Inc 電子機器及びその制御方法、メモリ媒体、並びにプリンタ
US6418059B1 (en) * 2000-06-26 2002-07-09 Intel Corporation Method and apparatus for non-volatile memory bit sequence program controller
JP2002244874A (ja) * 2001-02-15 2002-08-30 Toshiba Corp 情報処理装置およびファームウェア更新方法
JP4298387B2 (ja) * 2003-06-09 2009-07-15 キヤノン株式会社 データ記録装置

Also Published As

Publication number Publication date
EP1420415A3 (en) 2007-02-28
US6956773B2 (en) 2005-10-18
EP1420415A2 (en) 2004-05-19
EP1420415B1 (en) 2016-01-06
US20040145947A1 (en) 2004-07-29

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