IT8620460A1 - Procedimento per la realizzazione dell'isolamento di circuiti integrati a elevatissima scala d'integrazione, in particolare in tecnologia mos e cmos - Google Patents

Procedimento per la realizzazione dell'isolamento di circuiti integrati a elevatissima scala d'integrazione, in particolare in tecnologia mos e cmos

Info

Publication number
IT8620460A1
IT8620460A1 IT1986A20460A IT2046086A IT8620460A1 IT 8620460 A1 IT8620460 A1 IT 8620460A1 IT 1986A20460 A IT1986A20460 A IT 1986A20460A IT 2046086 A IT2046086 A IT 2046086A IT 8620460 A1 IT8620460 A1 IT 8620460A1
Authority
IT
Italy
Prior art keywords
mos
realization
insulation
procedure
integrated circuits
Prior art date
Application number
IT1986A20460A
Other languages
English (en)
Other versions
IT1189143B (it
IT8620460A0 (it
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT20460/86A priority Critical patent/IT1189143B/it
Publication of IT8620460A0 publication Critical patent/IT8620460A0/it
Priority to EP87106645A priority patent/EP0245783A3/en
Priority to JP62119957A priority patent/JPS62285440A/ja
Publication of IT8620460A1 publication Critical patent/IT8620460A1/it
Application granted granted Critical
Publication of IT1189143B publication Critical patent/IT1189143B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT20460/86A 1986-05-16 1986-05-16 Procedimento per la realizzazione dell'isolamento di circuiti integrati a elevatissima scala d'integrazione,in particolare in tecnologia mos e cmos IT1189143B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT20460/86A IT1189143B (it) 1986-05-16 1986-05-16 Procedimento per la realizzazione dell'isolamento di circuiti integrati a elevatissima scala d'integrazione,in particolare in tecnologia mos e cmos
EP87106645A EP0245783A3 (en) 1986-05-16 1987-05-07 Insulation method for integrated circuits, in particular with mos and cmos devices
JP62119957A JPS62285440A (ja) 1986-05-16 1987-05-15 集積回路のための絶縁方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20460/86A IT1189143B (it) 1986-05-16 1986-05-16 Procedimento per la realizzazione dell'isolamento di circuiti integrati a elevatissima scala d'integrazione,in particolare in tecnologia mos e cmos

Publications (3)

Publication Number Publication Date
IT8620460A0 IT8620460A0 (it) 1986-05-16
IT8620460A1 true IT8620460A1 (it) 1987-11-16
IT1189143B IT1189143B (it) 1988-01-28

Family

ID=11167280

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20460/86A IT1189143B (it) 1986-05-16 1986-05-16 Procedimento per la realizzazione dell'isolamento di circuiti integrati a elevatissima scala d'integrazione,in particolare in tecnologia mos e cmos

Country Status (3)

Country Link
EP (1) EP0245783A3 (it)
JP (1) JPS62285440A (it)
IT (1) IT1189143B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185936A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置
JPH05109762A (ja) * 1991-05-16 1993-04-30 Internatl Business Mach Corp <Ibm> 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
JPS5958838A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 半導体装置
FR2598557B1 (fr) * 1986-05-09 1990-03-30 Seiko Epson Corp Procede de fabrication d'une region d'isolation d'element d'un dispositif a semi-conducteurs

Also Published As

Publication number Publication date
EP0245783A2 (en) 1987-11-19
JPS62285440A (ja) 1987-12-11
IT1189143B (it) 1988-01-28
EP0245783A3 (en) 1989-10-25
IT8620460A0 (it) 1986-05-16

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530