IT8423519A0 - PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE. - Google Patents

PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE.

Info

Publication number
IT8423519A0
IT8423519A0 IT8423519A IT2351984A IT8423519A0 IT 8423519 A0 IT8423519 A0 IT 8423519A0 IT 8423519 A IT8423519 A IT 8423519A IT 2351984 A IT2351984 A IT 2351984A IT 8423519 A0 IT8423519 A0 IT 8423519A0
Authority
IT
Italy
Prior art keywords
procedure
manufacture
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
IT8423519A
Other languages
Italian (it)
Other versions
IT8423519A1 (en
IT1177148B (en
Inventor
Mikinori Kawaji
Toshihiko Takakura
Akihisa Uchida
Shigeo Kuroda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8423519A0 publication Critical patent/IT8423519A0/en
Publication of IT8423519A1 publication Critical patent/IT8423519A1/en
Application granted granted Critical
Publication of IT1177148B publication Critical patent/IT1177148B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
IT23519/84A 1983-11-11 1984-11-09 PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE IT1177148B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58210834A JPS60103642A (en) 1983-11-11 1983-11-11 Semiconductor device and manufacture thereof

Publications (3)

Publication Number Publication Date
IT8423519A0 true IT8423519A0 (en) 1984-11-09
IT8423519A1 IT8423519A1 (en) 1986-05-09
IT1177148B IT1177148B (en) 1987-08-26

Family

ID=16595879

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23519/84A IT1177148B (en) 1983-11-11 1984-11-09 PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Country Status (5)

Country Link
JP (1) JPS60103642A (en)
KR (1) KR920010828B1 (en)
DE (1) DE3440721A1 (en)
FR (1) FR2554970B1 (en)
IT (1) IT1177148B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890550B2 (en) * 1989-11-14 1999-05-17 松下電器産業株式会社 Method for manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275989A (en) * 1975-12-22 1977-06-25 Hitachi Ltd Production of semiconductor device
US4139442A (en) * 1977-09-13 1979-02-13 International Business Machines Corporation Reactive ion etching method for producing deep dielectric isolation in silicon
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
JPS57204133A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Manufacture of semiconductor integrated circuit
JPS5958838A (en) * 1982-09-29 1984-04-04 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
KR920010828B1 (en) 1992-12-17
JPS60103642A (en) 1985-06-07
FR2554970A1 (en) 1985-05-17
DE3440721A1 (en) 1985-05-23
FR2554970B1 (en) 1986-08-29
IT8423519A1 (en) 1986-05-09
DE3440721C2 (en) 1993-09-02
KR850004181A (en) 1985-07-01
IT1177148B (en) 1987-08-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19941125