FR2554970B1 - METHOD FOR MANUFACTURING A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITS - Google Patents
METHOD FOR MANUFACTURING A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITSInfo
- Publication number
- FR2554970B1 FR2554970B1 FR8413338A FR8413338A FR2554970B1 FR 2554970 B1 FR2554970 B1 FR 2554970B1 FR 8413338 A FR8413338 A FR 8413338A FR 8413338 A FR8413338 A FR 8413338A FR 2554970 B1 FR2554970 B1 FR 2554970B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- integrated semiconductor
- semiconductor circuits
- circuits
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58210834A JPS60103642A (en) | 1983-11-11 | 1983-11-11 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2554970A1 FR2554970A1 (en) | 1985-05-17 |
FR2554970B1 true FR2554970B1 (en) | 1986-08-29 |
Family
ID=16595879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8413338A Expired FR2554970B1 (en) | 1983-11-11 | 1984-08-29 | METHOD FOR MANUFACTURING A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITS |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS60103642A (en) |
KR (1) | KR920010828B1 (en) |
DE (1) | DE3440721A1 (en) |
FR (1) | FR2554970B1 (en) |
IT (1) | IT1177148B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2890550B2 (en) * | 1989-11-14 | 1999-05-17 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5275989A (en) * | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Production of semiconductor device |
US4139442A (en) * | 1977-09-13 | 1979-02-13 | International Business Machines Corporation | Reactive ion etching method for producing deep dielectric isolation in silicon |
US4238278A (en) * | 1979-06-14 | 1980-12-09 | International Business Machines Corporation | Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
JPS57204133A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Manufacture of semiconductor integrated circuit |
JPS5958838A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Semiconductor device |
-
1983
- 1983-11-11 JP JP58210834A patent/JPS60103642A/en active Pending
-
1984
- 1984-08-29 FR FR8413338A patent/FR2554970B1/en not_active Expired
- 1984-11-07 KR KR1019840006962A patent/KR920010828B1/en not_active IP Right Cessation
- 1984-11-07 DE DE19843440721 patent/DE3440721A1/en active Granted
- 1984-11-09 IT IT23519/84A patent/IT1177148B/en active
Also Published As
Publication number | Publication date |
---|---|
IT8423519A1 (en) | 1986-05-09 |
DE3440721C2 (en) | 1993-09-02 |
FR2554970A1 (en) | 1985-05-17 |
KR850004181A (en) | 1985-07-01 |
IT8423519A0 (en) | 1984-11-09 |
DE3440721A1 (en) | 1985-05-23 |
KR920010828B1 (en) | 1992-12-17 |
IT1177148B (en) | 1987-08-26 |
JPS60103642A (en) | 1985-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |