IT1177148B - PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Google Patents
PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICEInfo
- Publication number
- IT1177148B IT1177148B IT23519/84A IT2351984A IT1177148B IT 1177148 B IT1177148 B IT 1177148B IT 23519/84 A IT23519/84 A IT 23519/84A IT 2351984 A IT2351984 A IT 2351984A IT 1177148 B IT1177148 B IT 1177148B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- integrated circuit
- semiconductor integrated
- circuit device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58210834A JPS60103642A (en) | 1983-11-11 | 1983-11-11 | Semiconductor device and manufacture thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
IT8423519A0 IT8423519A0 (en) | 1984-11-09 |
IT8423519A1 IT8423519A1 (en) | 1986-05-09 |
IT1177148B true IT1177148B (en) | 1987-08-26 |
Family
ID=16595879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23519/84A IT1177148B (en) | 1983-11-11 | 1984-11-09 | PROCEDURE FOR THE MANUFACTURE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS60103642A (en) |
KR (1) | KR920010828B1 (en) |
DE (1) | DE3440721A1 (en) |
FR (1) | FR2554970B1 (en) |
IT (1) | IT1177148B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2890550B2 (en) * | 1989-11-14 | 1999-05-17 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5275989A (en) * | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Production of semiconductor device |
US4139442A (en) * | 1977-09-13 | 1979-02-13 | International Business Machines Corporation | Reactive ion etching method for producing deep dielectric isolation in silicon |
US4238278A (en) * | 1979-06-14 | 1980-12-09 | International Business Machines Corporation | Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
JPS57204133A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Manufacture of semiconductor integrated circuit |
JPS5958838A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Semiconductor device |
-
1983
- 1983-11-11 JP JP58210834A patent/JPS60103642A/en active Pending
-
1984
- 1984-08-29 FR FR8413338A patent/FR2554970B1/en not_active Expired
- 1984-11-07 KR KR1019840006962A patent/KR920010828B1/en not_active IP Right Cessation
- 1984-11-07 DE DE19843440721 patent/DE3440721A1/en active Granted
- 1984-11-09 IT IT23519/84A patent/IT1177148B/en active
Also Published As
Publication number | Publication date |
---|---|
IT8423519A1 (en) | 1986-05-09 |
FR2554970B1 (en) | 1986-08-29 |
DE3440721C2 (en) | 1993-09-02 |
FR2554970A1 (en) | 1985-05-17 |
KR850004181A (en) | 1985-07-01 |
IT8423519A0 (en) | 1984-11-09 |
DE3440721A1 (en) | 1985-05-23 |
KR920010828B1 (en) | 1992-12-17 |
JPS60103642A (en) | 1985-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19941125 |